CN118450310A - Audio chip assembly based on composite piezoelectric film and preparation method - Google Patents

Audio chip assembly based on composite piezoelectric film and preparation method Download PDF

Info

Publication number
CN118450310A
CN118450310A CN202410483816.8A CN202410483816A CN118450310A CN 118450310 A CN118450310 A CN 118450310A CN 202410483816 A CN202410483816 A CN 202410483816A CN 118450310 A CN118450310 A CN 118450310A
Authority
CN
China
Prior art keywords
piezoelectric
substrate
piezoelectric layer
chip assembly
audio chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410483816.8A
Other languages
Chinese (zh)
Inventor
刘炎
黄潇鸣
孙成亮
国世上
魏民
谷曦宇
曲远航
任玉奇
郑宇鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan University WHU
Original Assignee
Wuhan University WHU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan University WHU filed Critical Wuhan University WHU
Priority to CN202410483816.8A priority Critical patent/CN118450310A/en
Publication of CN118450310A publication Critical patent/CN118450310A/en
Pending legal-status Critical Current

Links

Landscapes

  • Piezo-Electric Transducers For Audible Bands (AREA)

Abstract

The application provides an audio chip assembly based on a composite piezoelectric film and a preparation method thereof, wherein the audio chip assembly comprises a substrate, and a lower electrode, a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode which are sequentially deposited on the substrate, wherein the first piezoelectric layer has a low dielectric constant and a low piezoelectric coefficient, and the second piezoelectric layer has a high dielectric constant and a high piezoelectric coefficient. The audio chip assembly based on the composite piezoelectric film, provided by the application, combines the piezoelectric layer with low dielectric loss and poor piezoelectric performance and the piezoelectric layer with high dielectric loss and high piezoelectric performance into a bimorph or multichip structure, and the advantages of the piezoelectric layers are complementary, so that the whole piezoelectric film has good piezoelectric performance and dielectric performance.

Description

Audio chip assembly based on composite piezoelectric film and preparation method
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to an audio chip assembly based on a composite piezoelectric film and a preparation method thereof.
Background
An acoustic transducer is an energy conversion device that can convert acoustic signals into electrical signals in different ways. Piezoelectric acoustic transducers are energy conversion devices that use the piezoelectric effect to convert acoustic signals into electrical signals, and piezoelectric MEMS microphones and speakers are typical piezoelectric acoustic transducers. In recent years, the piezoelectric MEMS audio chip has the advantages of small volume, stable performance, high signal to noise ratio, good sensitivity, high response speed and the like, and is widely applied to intelligent wearing equipment and intelligent mobile phones.
Through long-term development, the present performance index of the audio chip is focused on intellectualization, digitalization and miniaturization. The MEMS audio chip technology is increasingly combined with the fields of aerospace, biomedicine, consumer electronics, information communication, military industry and the like, and has higher requirements on the performance of the audio chip.
Disclosure of Invention
The application provides an audio chip assembly based on a composite piezoelectric film, which can solve the technical problem that the performance of the audio chip assembly is to be further improved in the prior art.
In a first aspect, the application provides an audio chip assembly based on a composite piezoelectric film, which comprises a substrate, and a lower electrode, a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode which are sequentially deposited on the substrate, wherein the first piezoelectric layer has a low dielectric constant and a high piezoelectric coefficient, and the second piezoelectric layer has a high dielectric constant and a high piezoelectric coefficient.
With reference to the first aspect, in one embodiment, the material of the lower electrode and the upper electrode is Mo, al, or Cu.
With reference to the first aspect, in an embodiment, a material of the first piezoelectric layer and the second piezoelectric layer is AlN, scAlN, PZT or ZnO.
With reference to the first aspect, in one embodiment, the first piezoelectric layer and the second piezoelectric layer have structures of aln\scann, aln\pzt, scann\pzt, aln\ ScAlN \pzt, or aln\ ScAlN \aln.
In a second aspect, the present application provides a piezoelectric microphone comprising a housing and an audio chip assembly based on a composite piezoelectric film as described above disposed within the housing.
With reference to the second aspect, in one embodiment, the housing includes a shell and a substrate, and the shell and the substrate are connected by conductive glue or solder paste.
With reference to the second aspect, in one embodiment, the substrate is a PCB board.
In a third aspect, the present application provides a method for manufacturing a piezoelectric microphone as described above, comprising the steps of:
Selecting a silicon wafer as a substrate;
Depositing a silicon dioxide protective layer on the upper surface of the substrate;
sequentially depositing a lower electrode, a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode on a substrate;
Pre-etching in an etching mode, namely sequentially etching through the upper electrode, the second piezoelectric layer, the middle electrode, the first piezoelectric layer, the lower electrode and the protective layer;
Etching the back of the substrate to form a back cavity structure to obtain an audio chip assembly with a cantilever structure;
And packaging the audio chip assembly and the ASIC chip to obtain the piezoelectric microphone device.
In a fourth aspect, the present application provides a loudspeaker comprising an audio chip assembly based on a composite piezoelectric film as described above.
In a fifth aspect, the present application provides a method for preparing a loudspeaker as described above, comprising the steps of:
selecting an SOI (Silicon-On-Insulator) wafer as a substrate;
depositing a lower electrode on the upper surface of the substrate;
sequentially depositing a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode on the lower electrode;
Pre-etching in an etching mode to pattern the upper electrode and lead out the lower electrode;
etching the back of the substrate to form a back cavity structure, and preparing an audio chip assembly;
And packaging the audio chip assembly to obtain the loudspeaker device.
The technical scheme provided by the embodiment of the application has the beneficial effects that at least:
The audio chip component based on the composite piezoelectric film provided by the application has the advantages that the piezoelectric layers with low dielectric constant (low dielectric loss) and low piezoelectric coefficient (poor piezoelectric performance) are arranged and combined into a double-wafer or multi-wafer structure according to actual conditions, and the advantages of the piezoelectric layers are complementary, so that the whole piezoelectric film has good piezoelectric performance and dielectric performance, and the acoustic transducer comprising the audio chip component has better acoustic performance.
Drawings
FIG. 1 is a longitudinal cross-sectional view of a composite piezoelectric film according to an embodiment of the present application;
FIG. 2 is a longitudinal cross-sectional view of a device according to example 1 of the present application after sequentially depositing a silicon dioxide substrate, a lower electrode, a piezoelectric composite film, and an upper electrode on a substrate;
FIG. 3 is a longitudinal cross-sectional view of a device after etching a diaphragm according to embodiment 1 of the present application;
fig. 4 is a longitudinal cross-sectional view of a device after back cavity etching according to embodiment 1 of the present application;
fig. 5 is a longitudinal sectional view of the piezoelectric microphone diaphragm produced in comparative example 1;
fig. 6 is a longitudinal cross-sectional view of the piezoelectric microphone after encapsulation according to the embodiment of the present application;
FIG. 7 is a graph showing the comparison of the output voltages of the microphones according to example 1 and comparative example 1;
FIG. 8 is a longitudinal cross-sectional view of the device of example 2 of the present application after deposition of a lower electrode, a composite piezoelectric layer, and an upper electrode in sequence and etching;
FIG. 9 is a longitudinal cross-sectional view of a device after back cavity etching in accordance with embodiment 2 of the present application;
FIG. 10 is a longitudinal cross-sectional view of the device of comparative example 2;
Fig. 11 is a graph showing the comparison of output sound pressure levels at 10mm for the speakers according to example 2 of the present application and comparative example 2.
In the figure, 1, a substrate; 2. a protective layer; 3. a lower electrode; 4. a first piezoelectric layer; 5. a second piezoelectric layer; 6. a back cavity; 11. an acoustic aperture; 15. an SOI wafer; 21. a housing; 31. a wire; 41. a MEMS chip; 51. a substrate; 61. ASIC chip.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The terms "comprising" and "having" and any variations thereof in the description and claims of the application and in the foregoing drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus. The terms "first," "second," and "third," etc. are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order, and are not limited to the fact that "first," "second," and "third" are not identical.
In describing embodiments of the present application, "exemplary," "such as," or "for example," etc., are used to indicate by way of example, illustration, or description. Any embodiment or design described herein as "exemplary," "such as" or "for example" is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary," "such as" or "for example," etc., is intended to present related concepts in a concrete fashion.
In the description of the embodiments of the present application, unless otherwise indicated, "/" means or, for example, a/B may represent a or B; the text "and/or" is merely an association relation describing the associated object, and indicates that three relations may exist, for example, a and/or B may indicate: the three cases where a exists alone, a and B exist together, and B exists alone, and furthermore, in the description of the embodiments of the present application, "plural" means two or more than two.
In some of the processes described in the embodiments of the present application, a plurality of operations or steps occurring in a particular order are included, but it should be understood that the operations or steps may be performed out of the order in which they occur in the embodiments of the present application or in parallel, the sequence numbers of the operations merely serve to distinguish between the various operations, and the sequence numbers themselves do not represent any order of execution. In addition, the processes may include more or fewer operations, and the operations or steps may be performed in sequence or in parallel, and the operations or steps may be combined.
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail with reference to the accompanying drawings.
The application provides an audio chip assembly based on a composite piezoelectric film, which comprises a substrate 1, a lower electrode 3, a first piezoelectric layer 4, a middle electrode, a second piezoelectric layer 5 and an upper electrode, wherein the lower electrode 3, the first piezoelectric layer 4, the middle electrode, the second piezoelectric layer 5 and the upper electrode are sequentially deposited on the substrate 1 layer by layer, the first piezoelectric layer 4 has a low dielectric constant and a high piezoelectric coefficient, and the second piezoelectric layer 5 has a high dielectric constant and a high piezoelectric coefficient.
The audio chip component based on the composite piezoelectric film provided by the application has the advantages that the piezoelectric layers with low dielectric constant (low dielectric loss) and low piezoelectric coefficient (poor piezoelectric performance) are arranged and combined into a double-wafer or multi-wafer structure according to actual conditions, and the advantages of the piezoelectric layers are complementary, so that the whole piezoelectric film has good piezoelectric performance and dielectric performance, and the acoustic transducer comprising the audio chip component has better acoustic performance.
In an embodiment, the electrode materials of the lower electrode 3 and the upper electrode are any one of Mo, al, cu or other conductive materials.
In an embodiment, the material of the first piezoelectric layer 4 and the second piezoelectric layer 5 is AlN, scAlN, PZT, znO or any one of other piezoelectric materials.
In an embodiment, the composite structure of the first piezoelectric layer 4 and the second piezoelectric layer 5 is any one of AlN/ScAlN, alN/PZT, scAlN/PZT, alN/ScAlN/PZT, alN/ScAlN/AlN or a multilayer composite structure formed by arranging and combining other piezoelectric layers having high piezoelectric coefficients and high dielectric constants, piezoelectric layers having low dielectric coefficients and low dielectric constants.
Based on the same inventive concept, the application also provides an acoustic transducer comprising the composite piezoelectric film-based audio chip assembly.
In a more specific embodiment, the acoustic transducer is a piezoelectric microphone and the audio chip component is a cantilever of the MEMS chip 41 of the piezoelectric microphone. More specifically, the piezoelectric microphone includes a housing having a receiving cavity, the housing 21 is provided with an acoustic hole 11 communicating with the receiving cavity, and the MEMS chip 41 is received in the receiving cavity.
In a more specific embodiment, the housing includes a shell 21 and a base plate 51, and the shell 21 and the base plate 51 enclose a receiving cavity.
In a more specific embodiment, the MEMS chip 41 includes fixing columns and cantilever beams, the fixing columns are fixedly supported on the substrate 51, the fixing columns are used for supporting the cantilever beams on the substrate 51, the number of the cantilever beams is multiple, the number of the fixing columns corresponds to the number of the cantilever beams, and a gap is formed between two adjacent cantilever beams. The fixed base and the cantilever beams are in a continuous curved pattern or polygon, and more specifically, a plurality of cantilevers Liang Chengdui are arranged and two cantilevers Liang Xiangxiang in each pair are arranged. More specifically, the cantilever beam is fixed with the fixed column in a contact manner, and the end far away from the fixed column forms a free end.
In an embodiment, the cantilever beam is a bimorph structure, and the bottom-up multilayer structure is: a substrate 1, a lower electrode 3, a first piezoelectric layer 4, a middle electrode, a second piezoelectric layer 5 and an upper electrode. The first piezoelectric layer 4 has a low dielectric constant and a high piezoelectric coefficient, and the second piezoelectric layer 5 has a high dielectric constant and a high piezoelectric coefficient.
In an embodiment, the fixing column is silicon or sapphire.
In one embodiment, the substrate 51 is a PCB board.
In an embodiment, the piezoelectric microphone further comprises an ASIC chip 61, the ASIC chip 61 and the MEMS chip 41 being electrically connected by a wire 31.
The longitudinal section of the composite piezoelectric film provided by the application is shown in fig. 1, and a middle electrode between the first piezoelectric layer 4 and the second piezoelectric layer 5 is omitted.
Based on the same inventive concept, the application also provides a preparation method for preparing the piezoelectric microphone, which comprises the following steps:
s1, selecting a silicon wafer as a substrate 1 of a cantilever beam;
S2, depositing a silicon dioxide protective layer 2 on the upper surface of the silicon wafer, and grinding the surface to be flat by using a chemical mechanical polishing process;
step S3, sequentially depositing a lower electrode 3, a first piezoelectric layer 4, a middle electrode, a second piezoelectric layer 5 and an upper electrode on the upper surface of the substrate 1, and grinding the surface to be flat by using a chemical mechanical polishing process, as shown in FIG. 2;
Step S4, pre-etching is carried out in an etching mode, and the upper electrode layer, the piezoelectric layer, the middle electrode, the piezoelectric layer, the lower electrode 3 layer and the protective layer 2 are sequentially etched through, as shown in FIG. 3;
Step S5, etching the back of the substrate 1 to form a back cavity 6 structure to obtain a cantilever beam diaphragm, as shown in FIG. 4; fixing the fixed end of the cantilever beam on the fixed column, and fixing the fixed column on the substrate 51 to form the MEMS chip 41;
step S6, the MEMS chip 41 and the ASIC chip 61 are electrically connected and packaged, so as to obtain a piezoelectric microphone device, as shown in fig. 6.
In a more specific embodiment, the acoustic transducer is a speaker, and the audio chip assembly based on the composite piezoelectric film is implemented as a diaphragm of the speaker, where the diaphragm includes, from bottom to top, a substrate 1, a lower electrode 3, a first piezoelectric layer 4, a middle electrode, a second piezoelectric layer 5, and an upper electrode; more specifically, the substrate 1 is an SOI substrate 1; more specifically, the first piezoelectric layer 4 has a low dielectric constant and a high piezoelectric coefficient, and the second piezoelectric layer 5 has a high dielectric constant and a high piezoelectric coefficient.
Based on the same inventive concept, the application also provides a preparation method for preparing the loudspeaker, which comprises the following steps:
step S1, selecting an SOI wafer 15 as a substrate 1;
step S2, depositing a lower electrode 3 on the upper surface of the substrate 1, and grinding the surface to be flat by using a chemical mechanical polishing process;
Step S3, sequentially depositing a first piezoelectric layer 4, a middle electrode, a second piezoelectric layer 5 and an upper electrode on the upper surface of the lower electrode 3, and grinding the surface to be flat by using a chemical mechanical polishing process, as shown in FIG. 8;
Step S4, pre-etching is carried out in an etching mode, the upper electrode is patterned, and the lower electrode 3 is led out;
Step S5, etching the back of the substrate 1 to form a back cavity 6 structure to obtain a vibrating diaphragm, as shown in FIG. 9;
and S6, packaging the vibrating diaphragm to obtain the loudspeaker device.
Example 1
A piezoelectric microphone device prepared based on the method;
Example 2
A speaker device prepared based on the above method;
Comparative example 1
The structure of the piezoelectric microphone device is similar to that of example 1, except that the diaphragm is a composite piezoelectric film design of one piezoelectric layer instead of two piezoelectric layers, and the longitudinal cross-sectional view of the device is shown in fig. 5.
Fig. 7 shows the output voltage measurements of example 1 compared to comparative example 1, and it can be seen that example 1 has a greater output voltage. This is because the piezoelectric layer of example 1 is a composite piezoelectric film in which a piezoelectric layer having a low dielectric constant (low dielectric loss) and a low piezoelectric coefficient (poor piezoelectric performance) and a piezoelectric layer having a high dielectric constant (high dielectric loss) and a high piezoelectric coefficient (good piezoelectric performance) are combined into two layers, and the overall piezoelectric film has good piezoelectric and dielectric properties, and the output voltage of the piezoelectric microphone can be increased.
Comparative example 2
The structure of the speaker device manufactured in example 2 was similar, except that the diaphragm was a composite piezoelectric film design of one piezoelectric layer instead of two piezoelectric layers, and the longitudinal sectional view of the device was as shown in fig. 10.
Fig. 11 shows comparison of the output sound pressure level measurement of the speaker manufactured in example 2 with that of comparative example 2, and it can be seen that the speaker device manufactured in example 2 has a larger output sound pressure level because the piezoelectric layer of example 2 is a composite piezoelectric film in which the piezoelectric layer having a low dielectric constant (low dielectric loss), a low piezoelectric coefficient (poor piezoelectric property) and the piezoelectric layer having a high dielectric constant (high dielectric loss), a high piezoelectric coefficient (good piezoelectric property) are combined into two layers, and the overall has good piezoelectric and dielectric properties, and the output sound pressure level of the speaker can be improved.
In the description of the present application, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present application and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present application. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application is understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that in the present application, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the application to enable those skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. The audio chip assembly based on the composite piezoelectric film is characterized by comprising a substrate, and a lower electrode, a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode which are sequentially deposited on the substrate, wherein the first piezoelectric layer has a low dielectric constant and a high piezoelectric coefficient, and the second piezoelectric layer has a high dielectric constant and a high piezoelectric coefficient.
2. The composite piezoelectric film-based audio chip assembly of claim 1, wherein the material of the lower electrode and the upper electrode is Mo, al, or Cu.
3. The composite piezoelectric film based audio chip assembly of claim 1, wherein the material of the first piezoelectric layer and the second piezoelectric layer is AlN, scAlN, PZT or ZnO.
4. The composite piezoelectric film-based audio chip assembly of claim 1, wherein the first piezoelectric layer and the second piezoelectric layer are structured of aln\scaln, aln\pzt, scaln\pzt, aln\ ScAlN \pzt, or aln\ ScAlN \aln.
5. A piezoelectric microphone comprising a housing and an audio chip assembly based on a composite piezoelectric film according to any one of claims 1-4 disposed within the housing.
6. The piezoelectric microphone of claim 5, wherein the housing comprises a shell and a substrate, the shell and the substrate being connected by conductive paste or solder paste.
7. The piezoelectric microphone of claim 6, wherein the substrate is a PCB board.
8. A method of manufacturing a piezoelectric microphone according to claim 5, comprising the steps of:
Selecting a silicon wafer as a substrate;
Depositing a silicon dioxide protective layer on the upper surface of the substrate;
sequentially depositing a lower electrode, a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode on a substrate;
Pre-etching in an etching mode, namely sequentially etching through the upper electrode, the second piezoelectric layer, the middle electrode, the first piezoelectric layer, the lower electrode and the protective layer;
Etching the back of the substrate to form a back cavity structure to obtain an audio chip assembly with a cantilever structure;
And packaging the audio chip assembly and the ASIC chip to obtain the piezoelectric microphone device.
9. A loudspeaker comprising an audio chip assembly based on a composite piezoelectric film as claimed in any one of claims 1 to 4.
10. A method of manufacturing a loudspeaker according to claim 9, comprising the steps of:
Selecting an SOI wafer as a substrate;
depositing a lower electrode on the upper surface of the substrate;
sequentially depositing a first piezoelectric layer, a middle electrode, a second piezoelectric layer and an upper electrode on the lower electrode;
Pre-etching in an etching mode to pattern the upper electrode and lead out the lower electrode;
etching the back of the substrate to form a back cavity structure, and preparing an audio chip assembly;
And packaging the audio chip assembly to obtain the loudspeaker device.
CN202410483816.8A 2024-04-22 2024-04-22 Audio chip assembly based on composite piezoelectric film and preparation method Pending CN118450310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410483816.8A CN118450310A (en) 2024-04-22 2024-04-22 Audio chip assembly based on composite piezoelectric film and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410483816.8A CN118450310A (en) 2024-04-22 2024-04-22 Audio chip assembly based on composite piezoelectric film and preparation method

Publications (1)

Publication Number Publication Date
CN118450310A true CN118450310A (en) 2024-08-06

Family

ID=92318639

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202410483816.8A Pending CN118450310A (en) 2024-04-22 2024-04-22 Audio chip assembly based on composite piezoelectric film and preparation method

Country Status (1)

Country Link
CN (1) CN118450310A (en)

Similar Documents

Publication Publication Date Title
CN101754077B (en) Piezoelectric acoustic transducer and method for fabricating the same
US9809444B2 (en) System and method for a differential comb drive MEMS
KR100931575B1 (en) Piezoelectric element micro speaker using MEMS and its manufacturing method
CN110602616B (en) High-sensitivity MEMS piezoelectric microphone
US8509462B2 (en) Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker
KR101561661B1 (en) Piezoelectric micro speaker having weight attached to vibrating membrane and method of manufacturing the same
US6788795B2 (en) Micromachined capacitive component with high stability
KR100931578B1 (en) Piezoelectric element microphone, speaker, microphone-speaker integrated device and manufacturing method thereof
US8401220B2 (en) Piezoelectric micro speaker with curved lead wires and method of manufacturing the same
TW200532746A (en) Electronic component, electronic component module and method of manufacturing the electronic component
CN111050256A (en) Miniaturized high-sensitivity piezoelectric microphone
CN113316072B (en) Piezoelectric acoustic transducer with filtering function and manufacturing method thereof
US20230239641A1 (en) Method of making mems microphone with an anchor
US20230011561A1 (en) Piezoelectric microphone with enhanced anchor
US20230234837A1 (en) Mems microphone with an anchor
US20230012046A1 (en) Cantilevered piezoelectric microelectromechanical systems microphone
WO2007010421A2 (en) Mems microphone and package
KR100737405B1 (en) Manufacturing method of micromachined silicon condenser microphone
CN201197186Y (en) Ultra-thin piezoelectric microphone
CN117098051A (en) Piezoelectric MEMS speaker chip and manufacturing method thereof
CN118450310A (en) Audio chip assembly based on composite piezoelectric film and preparation method
US12069455B2 (en) Process of fabricating lateral mode capacitive microphone including a capacitor plate with sandwich structure
CN116996822A (en) MEMS transducer and method of manufacturing the same
KR101108853B1 (en) Microphone module
US20230081056A1 (en) Acoustic device with connected cantilever

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination