CN1184059A - Preparation of luminescent-powder enclosing film - Google Patents
Preparation of luminescent-powder enclosing film Download PDFInfo
- Publication number
- CN1184059A CN1184059A CN 96122364 CN96122364A CN1184059A CN 1184059 A CN1184059 A CN 1184059A CN 96122364 CN96122364 CN 96122364 CN 96122364 A CN96122364 A CN 96122364A CN 1184059 A CN1184059 A CN 1184059A
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- luminescent
- silicon nitride
- powder
- luminescent powder
- preparation
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Abstract
The present invention discloses luminescent powder enclosing film and the enclosed electrical luminescent device needs no further integral packing. Silicon nitride is one transparent material with high chemical stability, thermal stability, sealing property, dielectrical constant, insulation coefficient and breakdown strength and capable of preventing ion migration. Owing to silicon nitride has high (over 900 deg.c) composition temperature, which results in the reduction of radiance of luminescent powder, the present invention synthesizes silicon nitride with silicone and ammonia at relatively low temperature through plasma intensified chemical gas-phase deposition.
Description
The present invention relates to a kind of powder and seal membrane process.
Need seal with the electroluminescent device that luminescent powder is made, mainly be anti-aging and protection against the tide, and the method for employing generally is to make encapsulating material with glass and fluoro-containing plastic integral device is sealed.This encapsulating method makes device leave an edge, influences the use of device.
The preparation method who the purpose of this invention is to provide a kind of luminescent-powder enclosing film, the electroluminescent device that the luminescent powder that this method is prepared is made need not remake integral body and seal.
For achieving the above object, the present invention adopts following technical scheme:
Silicon nitride is a transparent material, and chemical inertness, heat stability and compactness are good, specific inductance capacity and insulating coefficient height, and resistance to sparking is strong, and the energy actv. prevents the migration of ion.Because the temperature higher (more than 900 ℃) of silicon nitride chemical combination can cause the luminosity of luminescent powder to reduce, so using plasma strengthens chemical vapor deposition.Energy of plasma is big, and the electron temperature height makes silane and ammonia be combined to silicon nitride under lower temperature.
Place the vessel in heating that vacuumizes to 13-133Pa to 200-300 ℃ luminescent powder, feed silane (5-20Sccm) and ammonia (10-40Sccm), use plasma enhanced chemical vapor deposition, make luminescent powder particle surface formation one deck silicon nitride film.
Providing embodiment below specifies the present invention.
Luminescent powder is placed the vacuum vessel of 30Pa, be heated to 250 ℃, silane feeding amount is 10Sccm, and ammonia feeding amount is 25Sccm, and luminescent powder is constantly stirred in the input radio frequency source in the deposition process.
Claims (1)
1, a kind of preparation method of luminescent-powder enclosing film is characterized in that placing the vessel in heating that vacuumizes to 13-133Pa to 200-300 ℃ luminescent powder, feeds silane (5-20Sccm) and ammonia (10-40Sccm), uses plasma enhanced chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96122364 CN1184059A (en) | 1996-11-28 | 1996-11-28 | Preparation of luminescent-powder enclosing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96122364 CN1184059A (en) | 1996-11-28 | 1996-11-28 | Preparation of luminescent-powder enclosing film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1184059A true CN1184059A (en) | 1998-06-10 |
Family
ID=5127292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96122364 Pending CN1184059A (en) | 1996-11-28 | 1996-11-28 | Preparation of luminescent-powder enclosing film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1184059A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006069517A1 (en) * | 2004-12-29 | 2006-07-06 | Yan Zheng | Electroluminescent line |
| CN113403064A (en) * | 2021-06-25 | 2021-09-17 | 佛山安亿纳米材料有限公司 | Sulfide phosphor with good weatherability and chemical deposition method for preparing phosphor with good weatherability |
-
1996
- 1996-11-28 CN CN 96122364 patent/CN1184059A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006069517A1 (en) * | 2004-12-29 | 2006-07-06 | Yan Zheng | Electroluminescent line |
| CN113403064A (en) * | 2021-06-25 | 2021-09-17 | 佛山安亿纳米材料有限公司 | Sulfide phosphor with good weatherability and chemical deposition method for preparing phosphor with good weatherability |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |