CN118367321A

CN118367321A - Phase shifter, antenna device and display device

Info

Publication number: CN118367321A
Application number: CN202310088888.8A
Authority: CN
Inventors: 赵建昀; 郭景文; 吴倩红; 李春昕; 刘建兴; 曹子博; 曲峰; 李必奇
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2023-01-17
Filing date: 2023-01-17
Publication date: 2024-07-19

Abstract

A phase shifter, an antenna device, a display device, the phase shifter includes: a membrane bridge; the conductive structure layer is arranged between the signal line and the film bridge, and a space is arranged between the conductive structure layer and the film bridge; at least part of the conductive structure layer is not overlapped with the orthographic projection of the film bridge on the substrate, and is overlapped with the orthographic projection of the signal line on the substrate; and the insulating medium layer is arranged between the signal line and the conductive structure layer.

Description

Phase shifter, antenna device and display device

Technical Field

The embodiment of the application relates to the technical field of electronics, in particular to a phase shifter, an antenna device and a display device.

Background

The phase shifter (PHASE SHIFTERS) is a device that can adjust the phase of a wave. The phase shifter has wide application in the fields of radar, missile attitude control, accelerators, communication, instruments, music and the like. The traditional phase shifter is mainly realized by adopting ferrite materials, PIN diodes (PIN diodes) or switches of field effect transistors, wherein the ferrite phase shifter has larger power capacity, smaller insertion loss, but the large-scale application of the ferrite phase shifter is limited by the factors of complex process, high manufacturing cost, huge volume and the like; the semiconductor phase shifter has small volume, high working speed, small power capacity, high power consumption and high process difficulty. Compared with the traditional phase shifter, the Micro-electromechanical system (Micro-electromechanical Systems, MEMS) phase shifter has the advantages of small volume, light weight, short control time, lower insertion loss, larger loadable power and the like, and has great development and application prospect.

Radio frequency microelectromechanical systems (RF-MEMS) are receiving widespread attention for their very attractive performance, a key driving force for reconfigurable radio frequency front-ends. RF MEMS phase shifters have many attractive advantages over conventional phase shifters, such as high linearity, high quality factor, and little dc power consumption. The phase shifter mainly has performance indexes such as phase shift, isolation, insertion loss, return loss, frequency band, driving voltage, response time and the like, and the improvement of the parameter indexes is also a serious issue in the research of the industry. However, in the MEMS structural design, the performance index of the actually fabricated phase shifter is difficult to meet the requirements due to the limitation of the process capability.

Disclosure of Invention

The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.

In a first aspect, an embodiment of the present application provides a phase shifter, including:

a substrate;

The first ground wire and the second ground wire are arranged on the substrate at intervals;

A signal line disposed on the substrate and located between the first ground line and the second ground line;

The film bridge is at least partially arranged on one side of the signal line far away from the substrate, at least partially overlapped with the orthographic projection of the signal line on the substrate, and two ends of the film bridge are respectively connected with the first ground line and the second ground line;

the conductive structure layer is arranged between the signal line and the film bridge, and a space is arranged between the conductive structure layer and the film bridge; at least part of the conductive structure layer is not overlapped with the orthographic projection of the film bridge on the substrate, and is overlapped with the orthographic projection of the signal line on the substrate;

The insulating medium layer is arranged between the signal line and the conductive structure layer;

In an exemplary embodiment, the conductive structure layer includes a contact portion and an additional bridge portion electrically connected to each other, at least a portion of the contact portion overlapping with an orthographic projection of the film bridge on the substrate, and at least a portion of the additional bridge portion not overlapping with an orthographic projection of the film bridge on the substrate and overlapping with an orthographic projection of the signal line on the substrate.

In an exemplary embodiment, the conductive structure layer is a single conductive film layer.

In an exemplary embodiment, the conductive structure layer includes a contact portion and two additional bridge portions, the contact portion is in a rectangular bar shape, the two additional bridge portions are respectively connected with opposite ends of the contact portion, the two additional bridge portions are located at opposite sides of the membrane bridge, and the two additional bridge portions and the contact portion are combined to form an i shape.

In an exemplary embodiment, the conductive structure layer includes at least two conductive film layers, the at least two conductive film layers are insulated from each other, each of the at least two conductive film layers includes the contact portion and the additional bridge portion, at least portions of the additional bridge portions of the at least two conductive film layers do not overlap in orthographic projection of the substrate, and distances between the contact portions and the bridge portions of the at least two conductive film layers are different.

In an exemplary embodiment, the conductive structure layer includes a first conductive film layer and a second conductive film layer insulated from each other, the first conductive film layer includes a first contact portion and a first additional bridge portion, the second conductive film layer includes a second contact portion and a second additional bridge portion, the first additional bridge portion and the second additional bridge portion do not overlap in an orthographic projection of the substrate, the first contact portion has a first end near a side of the film bridge, the second contact portion has a second end near the side of the film bridge, and the first end of the first contact portion is located near the side of the film bridge.

In an exemplary embodiment, the first additional bridge portion is U-shaped, the first additional bridge portion being located on at least one side of the membrane bridge, an end portion of the first additional bridge portion extending toward the membrane bridge, the first additional bridge portion being located outside the second additional bridge portion, and the second additional bridge portion being located between both end portions of the first additional bridge portion.

In an exemplary embodiment, the first contact portion is a straight arm structure, an extending direction of the first contact portion intersects a plane in which the first additional bridge portion is located, and the first contact portion extends in a direction approaching the membrane bridge.

In an exemplary embodiment, the first contact portion includes a bent portion bent toward the film bridge, one end of the bent portion being connected to the first additional bridge portion, and the other end of the bent portion being connected to the straight arm portion.

In an exemplary embodiment, the film bridge includes a bridge deck portion that is disposed in suspension on a side of the signal line away from the substrate, the bridge deck portion including a central region overlapping an orthographic projection of the signal line on the substrate and a peripheral region on at least one side of the central region not overlapping an orthographic projection of the signal line on the substrate.

In an exemplary embodiment, the intermediate region is provided with at least one first groove near a side surface of the substrate.

In an exemplary embodiment, the peripheral region is provided with at least one second groove near a side surface of the substrate.

In an exemplary embodiment, at least one first through hole is provided in the peripheral region.

In an exemplary embodiment, the peripheral region is located at least one side of the middle region in a first direction, the first through hole extends along the first direction, at least one second through hole is provided in the peripheral region, the second through hole is located at least one side of the first through hole in a second direction, and one end of the second through hole away from the middle region is communicated with the first through hole, the first direction is an extending direction of the bridge surface portion, and the first direction is intersected with the second direction.

In an exemplary embodiment, the insulating dielectric layer is an inorganic material.

In an exemplary embodiment, the conductive structure layer is a metallic material

In a second aspect, an embodiment of the present application further provides an antenna apparatus, including any one of the foregoing phase shifters.

In a third aspect, an embodiment of the present application further provides a display apparatus, including any one of the foregoing antenna apparatuses.

Other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.

Drawings

The accompanying drawings are included to provide an understanding of the principles of the application, and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain, without limitation, the principles of the application.

FIG. 1 is a schematic diagram of a phase shifter according to an embodiment of the present application;

FIG. 2a is a cross-sectional view of a phase shifter according to an embodiment of the present application;

FIG. 2b is a second cross-sectional view of a phase shifter according to an embodiment of the present application;

FIG. 3 is a schematic diagram of a conductive structure layer in a phase shifter according to an embodiment of the present application;

FIG. 4a is a schematic diagram of a phase shifter according to an embodiment of the present application when the film bridge is not pulled down;

FIG. 4b is a schematic diagram of a phase shifter according to an embodiment of the present application when the film bridge is pulled down;

FIG. 5 is a schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the present application;

FIG. 6 is a second schematic diagram of the conductive structure layer in the phase shifter according to the embodiment of the present application;

FIG. 7 is a schematic diagram of a first conductive film layer in a phase shifter according to an embodiment of the present application;

FIG. 8 is a schematic diagram of a second conductive film layer in a phase shifter according to an embodiment of the present application;

FIG. 9a is a schematic diagram showing a film bridge pull-down process in a phase shifter according to an embodiment of the present application;

FIG. 9b is a schematic diagram II of a film bridge pull-down process in a phase shifter according to an embodiment of the present application;

FIG. 10 is a schematic diagram of a first contact portion of a phase shifter according to an embodiment of the present application;

FIG. 11 is a second schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the present application;

fig. 12 is a schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the present application.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail hereinafter with reference to the accompanying drawings. Note that embodiments may be implemented in a number of different forms. One of ordinary skill in the art can readily appreciate the fact that the manner and content may be varied into a wide variety of forms without departing from the spirit and scope of the present disclosure. Accordingly, the present disclosure should not be construed as being limited to the following description of the embodiments. Embodiments of the present disclosure and features of embodiments may be combined with each other arbitrarily without conflict.

In the drawings, the size of each constituent element, the thickness of a layer, or a region may be exaggerated for clarity. Accordingly, one aspect of the present disclosure is not necessarily limited to this dimension, and the shapes and sizes of the various components in the drawings do not reflect actual proportions. Further, the drawings schematically show ideal examples, and one mode of the present disclosure is not limited to the shapes or numerical values shown in the drawings, and the like.

The ordinal numbers of "first", "second", "third", etc. in the present specification are provided to avoid mixing of constituent elements, and are not intended to be limited in number.

In the present specification, for convenience, words such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, which indicate an azimuth or a positional relationship, are used to describe positional relationships of constituent elements with reference to the drawings, only for convenience of description and simplification of the description, and do not indicate or imply that the apparatus or elements referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus are not to be construed as limiting the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the direction in which the respective constituent elements are described. Therefore, the present invention is not limited to the words described in the specification, and may be appropriately replaced according to circumstances.

In this specification, the terms "mounted," "connected," and "connected" are to be construed broadly, unless explicitly stated or limited otherwise. For example, it may be a fixed connection, a removable connection, or an integral connection; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intermediate members, or may be in communication with the interior of two elements. The specific meaning of the terms in this disclosure will be understood by those of ordinary skill in the art in the specific context.

In this specification, a transistor means an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode. The transistor has a channel region between a drain electrode (a drain electrode terminal, a drain region, or a drain electrode) and a source electrode (a source electrode terminal, a source region, or a source electrode), and a current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, a channel region refers to a region through which current mainly flows.

In this specification, the first electrode may be a drain electrode, the second electrode may be a source electrode, or the first electrode may be a source electrode and the second electrode may be a drain electrode. In the case of using a transistor having opposite polarity, or in the case of a change in the direction of current during circuit operation, the functions of the "source electrode" and the "drain electrode" may be interchanged. Therefore, in this specification, "source electrode" and "drain electrode" may be exchanged with each other.

In this specification, "electrically connected" includes a case where constituent elements are connected together by an element having some electric action. The "element having a certain electric action" is not particularly limited as long as it can transmit and receive an electric signal between the constituent elements connected. Examples of the "element having some electric action" include not only an electrode and a wiring but also a switching element such as a transistor, a resistor, an inductor, a capacitor, other elements having various functions, and the like.

In the present specification, "parallel" means a state in which two straight lines form an angle of-10 ° or more and 10 ° or less, and therefore, a state in which the angle is-5 ° or more and 5 ° or less is also included. The term "perpendicular" refers to a state in which the angle formed by two straight lines is 80 ° or more and 100 ° or less, and thus includes a state in which the angle is 85 ° or more and 95 ° or less.

In this specification, "film" and "layer" may be exchanged with each other. For example, the "conductive layer" may be sometimes replaced with a "conductive film". In the same manner, the "insulating film" may be replaced with the "insulating layer" in some cases.

The term "about" in this disclosure refers to values that are not strictly limited to the limits, but are allowed to fall within the limits of the process and measurement errors.

The embodiment of the application provides a phase shifter, which comprises:

a substrate;

and the insulating medium layer is arranged between the signal line and the conductive structure layer.

The scheme of the present embodiment is illustrated by some examples below.

FIG. 1 is a schematic diagram of a phase shifter according to an embodiment of the present application; fig. 2a is a cross-sectional view of a phase shifter according to an embodiment of the present application. As shown in fig. 1 and 2a, the phase shifter according to the embodiment of the present application includes:

a substrate 10;

The first ground line 21, the second ground line 22, and the signal line 30 which are arranged on the substrate 10 at intervals, the first ground line 21, the second ground line 22, and the signal line 30 each extend along the second direction D2, the first ground line 21, the second ground line 22, and the signal line 30 are arranged at intervals along the first direction D1, and the signal line 30 is located between the first ground line 21 and the second ground line 22;

And a film bridge 40 disposed on the substrate 10, at least a portion of the film bridge 40 being located at a side of the first ground line 21, the second ground line 22 and the signal line 30 remote from the substrate 10, at least a portion of the film bridge 40 extending along the first direction D1, opposite ends of the film bridge 40 in the first direction D1 being connected to the first ground line 21 and the second ground line 22, respectively, a middle portion of the film bridge 40 being suspended at a side of the signal line 30 remote from the substrate, the middle portion of the film bridge 40 overlapping with an orthographic projection of the signal line 30 on the substrate 10, a first space being provided between the middle portion of the film bridge 40 and the signal line 30. The first direction D1 and the second direction D2 are parallel to the plane of the substrate 10, and the first direction D1 and the second direction D2 intersect, and the first direction D1 is perpendicular to the second direction D2.

The membrane bridge 40 and the signal line 30 of the phase shifter of the embodiment of the application form a switch, and by providing the bias voltage signal, electrostatic adsorption can occur between the middle part of the membrane bridge 40 and the signal line 30, so that the membrane bridge 40 is pulled down, the membrane bridge 40 moves along the direction close to the signal line 30, the capacitance between the membrane bridge 40 and the signal line 30 is changed, and the phase of the radio frequency signal transmitted on the signal line 30 is changed.

In an exemplary implementation, as shown in fig. 1 and 2a, the phase shifter according to the embodiment of the present application further includes a conductive structure layer 50 and an insulating medium layer 60, where the conductive structure layer 50 is disposed between the signal line 30 and the film bridge 40, and at least a portion of the conductive structure layer 50 does not overlap with an orthographic projection of the film bridge 40 on the substrate, and overlaps with an orthographic projection of the signal line 30 on the substrate. And a second space is provided between the conductive structure layer 50 and the film bridge 40, and the second space can move the film bridge 40 towards the direction close to the conductive structure layer 50, so that the film bridge 40 contacts with the conductive structure layer 50, thereby changing the capacitance between the film bridge 40 and the signal line 30. The insulating dielectric layer 60 is disposed between the conductive structure layer 50 and the signal line 30, and insulates the conductive structure layer 50 from the signal line 30.

Fig. 3 is a schematic diagram of a conductive structure layer in a phase shifter according to an embodiment of the application. In an exemplary embodiment, as shown in fig. 1 and 3, the conductive structure layer 50 includes a contact portion 51 and two additional bridge portions 52, the contact portion 51 having a rectangular stripe shape extending along the second direction D2, at least a portion of the contact portion 51 overlapping with an orthographic projection of the film bridge 40 on the substrate 10, the contact portion 51 being configured to contact the film bridge 40 pulled down. The two additional bridge portions 52 are respectively connected to opposite ends of the contact portion 51 in the second direction D2, the two additional bridge portions 52 are located on opposite sides of the film bridge 40 in the second direction D2, at least portions of the two additional bridge portions 52 do not overlap with the orthographic projection of the film bridge 40 on the substrate 10, and overlap with the orthographic projection of the signal line 30 on the substrate 10, and the two additional bridge portions 52 are combined with the contact portion 51 to form an i-shape.

In an exemplary embodiment, the structure of the conductive structure layer 50 is not particularly limited, and for example, as shown in fig. 3, the conductive structure layer 50 is a single conductive film layer.

In the phase shifter according to the embodiment of the application, the conductive structure layer 50 is arranged between the signal line 30 and the film bridge 40, when the film bridge 40 is pulled down, at least part of the film bridge 40 is in contact with the contact part 51 of the conductive structure layer 50, the conductive structure layer 50 is electrically connected with the film bridge 40, and the part of the conductive structure layer 50, which is not overlapped with the film bridge 40, increases the equivalent surface area of the film bridge 40, namely, the area of the film bridge 40 opposite to the signal line 30 is increased by the additional bridge part 52, so that the capacitance of the phase shifter is increased, and the phase shifting range of the phase shifter is improved.

The working principle of the phase shifter of the embodiment of the application is based on a relation formula of capacitance: c=εs/d, where the capacitance C is the capacitance formed by the film bridge 40 and the signal line 30, the film bridge 40 is one plate of the capacitance, and the signal line 30 is the other plate of the capacitance; epsilon is the relative dielectric constant between the capacitors, S is the overlapping area of the orthographic projection of the film bridge 40 and the signal line 30 on the substrate, and d is the distance between the film bridge 40 and the signal line 30.

FIG. 4a is a schematic diagram of a phase shifter according to an embodiment of the present application when the film bridge is not pulled down; fig. 4b is a schematic diagram of the phase shifter according to the embodiment of the present application when the film bridge is pulled down. When the film bridge 40 is not pulled down in the phase shifter according to the embodiment of the application, a second space is provided between the film bridge 40 and the conductive structure layer 50, the middle portion of the film bridge 40 and the signal line 30 are overlapped in orthographic projection on the substrate, the overlapping area of the phase shifter capacitor is S1, and the overlapping area S1 is the overlapping area of the middle portion of the film bridge 40 and the signal line 30, as shown in fig. 4 a. When the film bridge 40 is pulled down in the phase shifter according to the embodiment of the application, the film bridge 40 is in contact with the contact portion 51 of the conductive structure layer 50, the conductive structure layer 50 is electrically connected with the film bridge 40, the middle portion of the film bridge 40 and the additional bridge portion 52 of the conductive structure layer 50 are both overlapped with the signal line 30 in the orthographic projection on the substrate, the overlapped area of the phase shifter capacitor is S2, the overlapped area S2 is the overlapped area of the middle portion of the film bridge 40 and the additional bridge portion 52 and the signal line 30, so that the overlapped area S2 of the capacitor after the film bridge 40 is pulled down is larger than the overlapped area S1 of the capacitor without the film bridge 40 being pulled down, and the capacitor of the phase shifter is further increased, thereby the phase shifter is lifted up, as shown in fig. 4b.

In an exemplary embodiment, the materials of the first ground line 21, the second ground line 22 and the signal line 30 are not particularly limited, and for example, the materials of the first ground line 21, the second ground line 22 and the signal line 30 may include metal materials. For example, the materials of the first ground line 21, the second ground line 22 and the signal line 30 may be metallic copper.

In an exemplary embodiment, the material of the insulating medium layer 60 is not particularly limited, and for example, the material of the insulating medium layer 60 may include an inorganic material. For example, the insulating dielectric layer 60 may be made of silicon nitride.

In an exemplary embodiment, the materials of the film bridge 40 and the conductive structure layer 50 are not particularly limited, and for example, the materials of the film bridge 40 and the conductive structure layer 50 may include metal materials. For example, the material of the film bridge 40 and the conductive structure layer 50 may be the same. The material of the membrane bridge 40 and the conductive structure layer 50 may include molybdenum or aluminum, so that the mechanical properties of the membrane bridge 40 can be ensured while the tensile properties of the membrane bridge 40 are ensured.

Fig. 5 is a schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the present application. In an exemplary embodiment, the structure of the membrane bridge 40 is not particularly limited, for example, as shown in fig. 1 and 5, the membrane bridge 40 is in an i shape, the membrane bridge 40 includes a bridge deck portion 41 extending along a first direction D1, and a first connection anchor point 42 and a second connection anchor point 43 connected to opposite ends of the bridge deck portion 41 in the first direction D1, the first connection anchor point 42 is connected to the first ground line 21, the second connection anchor point 43 is connected to the second ground line 22, the bridge deck portion 41 is suspended on a side of the signal line 30 away from the substrate, and at least a portion of the bridge deck portion 41 overlaps with an orthographic projection of the signal line 30 on the substrate.

In an exemplary embodiment, as shown in fig. 2a and 5, the bridge deck portion 41 of the film bridge 40 includes a middle region 411 and peripheral regions 412 located on opposite sides of the middle region 411 in the first direction D1, where the middle region 411 overlaps with the orthographic projection of the signal line 30 on the substrate, and the peripheral regions 412 do not overlap with the orthographic projection of the signal line 30 on the substrate. The middle region 411 is provided with at least one first recess 44 near one side surface of the substrate. After the first groove 44 pulls down the film bridge 40, the film bridge 40 is in closer contact with the conductive structure layer 50; when the membrane bridge 40 with the structure is pulled down, the membrane bridge 40 is not curled to two sides, so that the membrane bridge 40 is prevented from being deformed transversely, the membrane bridge 40 is pulled down more easily, and the driving voltage is reduced.

Fig. 2b is a cross-sectional view of a phase shifter according to an embodiment of the present application. In an exemplary embodiment, as shown in fig. 2b, the middle region 411 of the film bridge 40 is provided with at least one first groove 44 near a side surface of the substrate, for example, the middle region 411 is provided with a plurality of first grooves 44 near a side surface of the substrate, and the plurality of first grooves 44 are arranged at intervals along the first direction D1. The peripheral region 412 of the film bridge 40 is provided with at least one second groove 45 near a side surface of the substrate, for example, the peripheral region 412 is provided with a plurality of second grooves 45 near a side surface of the substrate, and the plurality of second grooves 45 are arranged at intervals along the first direction D1.

The above structure of the film bridge 40 of the phase shifter of the embodiment of the application does not curl to two sides when the film bridge 40 is pulled down, thereby avoiding the film bridge 40 from being deformed transversely, making the film bridge 40 easier to pull down and reducing the driving voltage. In addition, in the process of preparing the membrane bridge 40, when the sacrificial layer at the bottom of the membrane bridge 40 is released, the problem of torsion deformation of the membrane bridge 40 is avoided, and the membrane bridge 40 is prepared by a wet etching method.

In an exemplary embodiment, the conductive structure layer may include at least two conductive film layers, where the at least two conductive film layers are insulated from each other, where the at least two conductive film layers include a contact portion and an additional bridge portion, at least portions of the additional bridge portions of the at least two conductive film layers do not overlap in orthographic projection of the substrate, and distances between the contact portions of the at least two conductive film layers and the film bridge are different, so that the film bridge can be respectively contacted with the contact portions of the at least two conductive film layers in sequence in a pull-down process, and further an overlapping area of the phase shifter capacitor is progressively increased, so that an excessive abrupt change of a phase shifter does not occur, and stability of a phase shifter change is ensured.

FIG. 6 is a second schematic diagram of the conductive structure layer in the phase shifter according to the embodiment of the present application; FIG. 7 is a schematic diagram of a first conductive film layer in a phase shifter according to an embodiment of the present application; fig. 8 is a schematic diagram of a second conductive film layer in a phase shifter according to an embodiment of the application. In an exemplary embodiment, as shown in fig. 6, 7 and 8, the conductive structure layer 50 may include a first conductive film layer 71 and a second conductive film layer 72 insulated from each other, the first conductive film layer 71 including a first contact portion 711 and a first additional bridge portion 712, at least a portion of the first contact portion 711 overlapping with an orthographic projection of the film bridge 40 on the substrate 10, the first contact portion 711 being configured to contact the film bridge 40 pulled down. At least part of the first additional bridge portion 712 does not overlap with the orthographic projection of the film bridge 40 on the substrate 10 and overlaps with the orthographic projection of the signal line 30 on the substrate 10. The second conductive film layer 72 includes a second contact portion 721 and a second additional bridge portion 722, at least a portion of the second contact portion 721 overlapping with an orthographic projection of the film bridge 40 on the substrate 10, the second contact portion 721 being configured to contact the film bridge 40 being pulled down. At least part of the second additional bridge portion 722 does not overlap with the orthographic projection of the film bridge 40 on the substrate 10 and overlaps with the orthographic projection of the signal line 30 on the substrate 10. At least a portion of the first additional bridge portion 712 does not overlap with at least a portion of the second additional bridge portion 722 in the orthographic projection of the substrate 10, and illustratively, the orthographic projections of the first additional bridge portion 712 and the second additional bridge portion 722 in the substrate 10 do not overlap at all. The first contact part 711 has a first end close to one side of the film bridge 40, the second contact part 721 has a second end close to one side of the film bridge 40, the first end of the first contact part 711 is located at the second end of the second contact part 721 close to one side of the film bridge 40, and in the process of pulling down the film bridge 40, the first contact part is firstly contacted with the first end of the first contact part 711, so that the film bridge 40 is electrically connected with the first conductive film layer 71, and the first additional bridge part 712 of the first conductive film layer 71 increases the overlapping area of the capacitor; then, the film bridge 40 continues to pull down, and the film bridge 40 contacts with the second end of the second contact portion 721, so that the film bridge 40 is electrically connected with the second conductive film layer 72, and the second additional bridge portion 722 of the second conductive film layer 72 again increases the overlapping area of the capacitors, so as to realize the progressive increase of the overlapping area of the capacitors of the phase shifter.

FIG. 9a is a schematic diagram showing a film bridge pull-down process in a phase shifter according to an embodiment of the present application; fig. 9b is a schematic diagram of a film bridge pull-down process in the phase shifter according to the embodiment of the application. When the film bridge 40 is not pulled down in the phase shifter according to the embodiment of the application, a second space is provided between the film bridge 40 and the conductive structure layer 50, the middle part of the film bridge 40 and the signal line 30 are overlapped in the orthographic projection of the substrate, and the overlapping area of the phase shifter capacitor is the overlapping area of the middle part of the film bridge 40 and the signal line 30. When the film bridge 40 is pulled down in the phase shifter according to the embodiment of the present application, the film bridge 40 is first contacted with the first contact portion 711 of the first conductive film layer 71, the first conductive film layer 71 is electrically connected with the film bridge 40, and the overlapping area of the phase shifter capacitor is the overlapping area of the middle portion of the film bridge 40 and the first additional bridge portion 712 and the signal line 30, so that the overlapping area of the capacitor is increased, as shown in fig. 9 a. When the film bridge 40 continues to pull down in the phase shifter according to the embodiment of the present application, the film bridge 40 is always in contact with the first contact portion 711, so that the film bridge 40 is always in communication with the first conductive film layer 71, the film bridge 40 is further in contact with the second contact portion 721 of the second conductive film layer 72, the second conductive film layer 72 is electrically connected to the film bridge 40, and the overlapping area of the phase shifter capacitor is the overlapping area of the middle portion of the film bridge 40, the first additional bridge portion 712 of the first conductive film layer 71, and the second additional bridge portion 722 of the second conductive film layer 72 and the signal line 30, so that the overlapping area of the capacitor is further increased, as shown in fig. 9 b.

The structure of the phase shifter of the embodiment of the application enables the film bridge 40 to be sequentially contacted with the first conductive film layer 71 and the second conductive film layer 72 in the process of pulling down, so that the overlapping area of the capacitors of the phase shifter is increased in a progressive manner, the phase shifter cannot generate excessive abrupt change in phase shifting degree, and the stability of the phase shifting degree change is ensured.

In an exemplary embodiment, as shown in fig. 6 and 8, the second conductive film layer 72 is a single film layer, and the second conductive film layer 72 is i-shaped. The second contact portion 721 of the second conductive film layer 72 has a rectangular stripe shape, and at least a portion of the second contact portion 721 overlaps with the orthographic projection of the film bridge 40 on the substrate 10. The second conductive film layer 72 includes two second additional bridge portions 722, each of the two second additional bridge portions 722 being rectangular, the two second additional bridge portions 722 being connected to opposite ends of the second contact portion 721, respectively, the two second additional bridge portions 722 being located on opposite sides of the film bridge 40.

In the exemplary embodiment, as shown in fig. 6 and 7, the first conductive film layer 71 includes two first additional bridge portions 712, each of the two first additional bridge portions 712 has a U shape, the two first additional bridge portions 712 are located at opposite sides of the film bridge 40, and end portions of the two first additional bridge portions 712 extend toward the film bridge 40 with a space provided between the end portions of the two first additional bridge portions 712. The first additional bridge portion 712 is located outside the second additional bridge portion 722, extending around the edges of the second additional bridge portion 722, the second additional bridge portion 722 being located between the two ends of the first additional bridge portion 712, the orthographic projections of the first and second additional bridge portions 712, 722 on the substrate not overlapping. The first additional bridge portion 712 is located on the side of the second additional bridge portion 722 that is closer to the film bridge 40, and a gap is provided between the first additional bridge portion 712 and the second additional bridge portion 722 to insulate the first additional bridge portion 712 and the second additional bridge portion 722 from each other. The first additional bridge portion 712 is provided with a first contact portion 711 at both end portions.

In an exemplary embodiment, the structure of the first contact portion 711 is not specifically limited, for example, as shown in fig. 7, the first contact portion 711 is a straight arm structure, the extending direction of the first contact portion 711 intersects the plane of the first additional bridge portion 712, and the first contact portion 711 extends along the direction approaching the film bridge 40. One end of the first contact portion 711 is connected to an end of the first additional bridge portion 712, and the other end of the first contact portion 711 extends in a direction approaching the membrane bridge 40 with a second space provided between the membrane bridge 40. At least a portion of the first contact portion 711 forms an included angle with a plane in which the first additional bridge portion 712 is located, the included angle being an obtuse angle. In some embodiments, the included angle may also be an acute angle.

The above structure of the first contact portion 711 in the phase shifter according to the embodiment of the present application can enable the first contact portion 711 to move downward together with the film bridge 40 when receiving the force of the downward pressing of the film bridge 40, and ensure that the first contact portion 711 can maintain the communication between the film bridge 40 and the first conductive film layer 71 during the downward movement of the film bridge 40.

Fig. 10 is a schematic diagram of a first contact portion in a phase shifter according to an embodiment of the application. In an exemplary embodiment, as shown in fig. 10, the first contact part 711 may include a bent part 7111 and a straight arm part 7112, the bent part 7111 being bent toward the film bridge 40 to form an inverted U-shaped protrusion extending toward the film bridge 40, one end of the bent part 7111 being connected to an end of the first additional bridge part 712, and the other end of the bent part 7111 being connected to the straight arm part 7112. The straight arm portion 7112 extends in a direction parallel to the plane in which the first additional bridge portion 712 is located, and a contact having a convex shape is provided on an end of the straight arm portion 7112 remote from the curved portion 7111.

The above structure of the first contact portion 711 in the phase shifter according to the embodiment of the present application enables the first contact portion 711 to have better deformability, and prevents the first contact portion 711 from being deformed insufficiently, which may cause the first contact portion 711 to hinder the membrane bridge 40 from being pulled down. The improved deformability of the first contact 711 can make it easier to pull down the membrane bridge 40, thereby reducing the driving voltage, and can ensure that the first contact 711 is restored to its original position during the ascent of the membrane bridge 40.

Fig. 11 is a schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the application. In an exemplary embodiment, as shown in fig. 11, at least one first through hole 81 is provided in the peripheral region of the film bridge 40. The orthographic projection of the first through hole 81 and the signal line 30 on the substrate is not overlapped, so as to avoid influencing the phase shifter.

In an exemplary embodiment, the shape of the first through hole 81 is not particularly limited, for example, as shown in fig. 11, the first through hole 81 may be rectangular and strip-shaped, and extend along the first direction D1, that is, the extending direction of the first through hole 81 is the same as the extending direction of the bridge surface portion. The two first through holes 81 are located on opposite sides of the middle region of the film bridge 40 in the first direction D1, respectively.

The above-described structure of the film bridge 40 in the phase shifter of the embodiment of the present application eliminates the occurrence of curling of the film bridge in the cross-sectional direction when the sacrifice layer is released; the peripheral area of the membrane bridge 40 forms a double-straight-beam structure at two sides of the first through hole 81, so that the balance in the deformation process of the membrane bridge is ensured; the double straight beam structure ensures that the membrane bridge 40 is more easily pulled down by force after the phase shifter is electrified, thereby achieving the purpose of reducing the driving voltage.

Fig. 12 is a schematic diagram of a membrane bridge in a phase shifter according to an embodiment of the present application. In an exemplary embodiment, as shown in fig. 12, at least one first through hole 81 and at least one second through hole 82 are provided in the peripheral region of the film bridge 40. The second through hole 82 is located at least one side of the first through hole 81 in the second direction D2. The second through holes 82 are, for example, located on opposite sides of the first through holes 81 in the second direction D2. The first via 81 and the second via 82 are not overlapped with the orthographic projection of the signal line 30 on the substrate, so as to avoid affecting the phase shifter.

In an exemplary embodiment, as shown in fig. 12, the first through hole 81 may have a rectangular bar shape extending along the first direction D1. The two first through holes 81 are located on opposite sides of the middle region of the film bridge 40 in the first direction D1, respectively. The second through holes 82 may be L-shaped, the two second through holes 82 are respectively located at two opposite sides of the first through hole 81 in the second direction D2, and one ends of the two second through holes 82 away from the middle area all extend toward the first through hole 81 and all communicate with the first through hole 81, and the other ends of the two second through holes 82 all extend along the first direction D1.

The structure of the membrane bridge 40 in the phase shifter of the embodiment of the application ensures that the membrane bridge 40 has better elasticity, can bear larger stress variation under the same acting force, ensures that the membrane bridge 40 is easier to be pulled down by force after the phase shifter is electrified, and achieves the purpose of reducing the driving voltage.

The embodiment of the invention also provides an antenna device which comprises the phase shifter. Specifically, the antenna device comprises a plurality of antenna units and a radio frequency signal providing circuit, wherein the antenna units are arranged along the row direction and the column direction, the antenna units comprise a radio frequency antenna and at least one phase shifter connected with the radio frequency antenna, and the radio frequency signal providing circuit is used for providing radio frequency signals for the radio frequency antenna through the phase shifter.

The embodiment of the invention also provides a display device which comprises the antenna device. The display device can comprise any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.

The drawings in the present disclosure relate only to the structures to which the present disclosure relates, and other structures may be referred to in general. Features of embodiments of the present disclosure, i.e., embodiments, may be combined with one another to arrive at a new embodiment without conflict.

It will be understood by those skilled in the art that various modifications and equivalent substitutions may be made to the disclosed embodiments without departing from the spirit and scope of the disclosed embodiments, which are intended to be encompassed within the scope of the appended claims.

Claims

1.A phase shifter, comprising:

a substrate;

2. The phase shifter of claim 1, wherein the conductive structure layer includes a contact portion and an additional bridge portion electrically connected to each other, at least a portion of the contact portion overlapping an orthographic projection of the film bridge on the substrate, at least a portion of the additional bridge portion not overlapping an orthographic projection of the film bridge on the substrate, and overlapping an orthographic projection of the signal line on the substrate.

3. The phase shifter of claim 2, wherein the conductive structure layer is a single conductive film layer.

4. A phase shifter according to claim 3, wherein the conductive structure layer includes a contact portion having a rectangular bar shape and two additional bridge portions connected to opposite ends of the contact portion, respectively, the two additional bridge portions being located on opposite sides of the film bridge, the two additional bridge portions being combined with the contact portion to form an i-shape.

5. The phase shifter of claim 2, wherein the conductive structure layer comprises at least two conductive film layers, the at least two conductive film layers being insulated from each other, the at least two conductive film layers each comprising the contact portion and the additional bridge portion, at least portions of the additional bridge portions of the at least two conductive film layers not overlapping in orthographic projection of the substrate, the distances between the contact portions and the bridge of the at least two conductive film layers being different.

6. The phase shifter of claim 5, wherein the conductive structure layer comprises a first conductive film layer and a second conductive film layer that are insulated from each other, the first conductive film layer comprising a first contact portion and a first additional bridge portion, the second conductive film layer comprising a second contact portion and a second additional bridge portion, the first additional bridge portion and the second additional bridge portion not overlapping in orthographic projection of the substrate, the first contact portion having a first end proximate to the bridge side, the second contact portion having a second end proximate to the bridge side, the first end of the first contact portion being located proximate to the bridge side at the second end of the second contact portion.

7. The phase shifter of claim 6, wherein the first additional bridge portion is U-shaped, the first additional bridge portion being located on at least one side of the membrane bridge, an end of the first additional bridge portion extending toward the membrane bridge, the first additional bridge portion being located outside of the second additional bridge portion, the second additional bridge portion being located between two end portions of the first additional bridge portion.

8. The phase shifter of claim 6, wherein the first contact portion has a straight arm structure, an extending direction of the first contact portion intersects a plane in which the first additional bridge portion is located, and the first contact portion extends in a direction approaching the film bridge.

9. The phase shifter of claim 6, wherein the first contact portion includes a curved portion curved toward the film bridge, one end of the curved portion being connected to the first additional bridge portion, and a straight arm portion, the other end of the curved portion being connected to the straight arm portion.

10. The phase shifter of any one of claims 1 to 9, wherein the film bridge comprises a bridge surface portion that is disposed in suspension on a side of the signal line away from the substrate, the bridge surface portion comprising a central region overlapping an orthographic projection of the signal line on the substrate and a peripheral region on at least one side of the central region, the peripheral region not overlapping an orthographic projection of the signal line on the substrate.

11. The phase shifter of claim 10, wherein the intermediate region is provided with at least one first recess near a side surface of the substrate.

12. The phase shifter of claim 11, wherein the peripheral region is provided with at least one second recess near a side surface of the substrate.

13. The phase shifter of claim 10, wherein at least one first via is provided in the peripheral region.

14. The phase shifter according to claim 13, wherein the peripheral region is located on at least one side of the intermediate region in a first direction along which the first through hole extends, wherein at least one second through hole is provided in the peripheral region, wherein the second through hole is located on at least one side of the first through hole in a second direction, and wherein an end of the second through hole away from the intermediate region communicates with the first through hole, wherein the first direction is an extending direction of the bridge portion, and wherein the first direction intersects the second direction.

15. The phase shifter of claim 1, wherein the insulating dielectric layer is an inorganic material.

16. The phase shifter of claim 1, wherein the conductive structure layer is a metallic material.

17. An antenna device comprising a phase shifter according to any one of claims 1 to 16.

18. A display device comprising the antenna device according to claim 17 _.