CN118301974A - Display mother board, manufacturing method thereof and display panel - Google Patents

Abstract

The present disclosure provides a display motherboard, which has a plurality of single panel areas distributed at intervals, wherein each single panel area is provided with a plurality of sub-pixels; the display mother board comprises a drive backboard and a plurality of light-emitting elements arranged on the drive backboard, wherein the light-emitting elements are arranged in corresponding sub-pixels, and each light-emitting element comprises at least two vapor deposition film layers which are stacked in sequence from the direction close to the drive backboard to the direction far from the drive backboard; wherein at least part of the subpixels are configured to: when the vapor deposition film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, the length-width ratio of the sub-pixel is greater than or equal to 1, and the length extension direction of the sub-pixel is the moving direction of the linear vapor deposition source; or when the vapor deposition film layer is formed by a vertical vapor deposition method, the aspect ratio of the sub-pixel is 0.82 to 1.22. The disclosure also provides a manufacturing method of the display motherboard and a display panel. The display mother board, the manufacturing method thereof and the display panel can improve the bad phenomenon of display products.

Description

Display mother board, manufacturing method thereof and display panel

Technical Field

The invention relates to the technical field of display, in particular to a display mother board, a manufacturing method thereof and a display panel.

Background

In a process for manufacturing an OLED (Organic Light-Emitting Diode), a Light-Emitting element includes a film layer such as a Light-Emitting material layer, and the film layer may be an evaporation film layer formed by depositing an evaporation material into a subpixel of a driving back plate by an evaporation method. Due to shadow effect in the evaporation process, the design size or design position of the evaporated film formed by actual evaporation is deviated from that of the film, and thus poor display products are caused.

Disclosure of Invention

The embodiment of the disclosure provides a display mother board, a manufacturing method thereof and a display panel, which can improve the bad phenomenon of display products.

The technical scheme provided by the embodiment of the disclosure is as follows:

in a first aspect, an embodiment of the present disclosure provides a display motherboard, which has a plurality of single panel regions distributed at intervals, and each single panel region is provided with a plurality of sub-pixels; the display mother board comprises a drive backboard and a plurality of light-emitting elements arranged on the drive backboard, wherein the light-emitting elements are arranged in the corresponding sub-pixels, and each light-emitting element comprises at least two vapor deposition film layers which are sequentially stacked in a direction from being close to the drive backboard to being far away from the drive backboard; wherein at least part of the subpixels are configured to:

When the vapor deposition film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, the length-width ratio of the sub-pixel is greater than or equal to 1, and the length extension direction of the sub-pixel is the moving direction of the linear vapor deposition source; or alternatively

When the vapor deposition layer is formed by a vertical vapor deposition method, the aspect ratio of the sub-pixel is 0.82 to 1.22.

Illustratively, the display motherboard further comprises:

The pixel definition layer is arranged on the driving backboard and provided with a plurality of pixel openings so as to limit a plurality of sub-pixels;

An isolation column located at a side of the pixel defining layer away from the driving back plate and disposed around the pixel opening; and

A pixel encapsulation layer covering a side of the light emitting element away from the driving back plate; wherein,

The light-emitting element comprises an anode, a light-emitting functional layer and a cathode which are sequentially stacked from the direction close to the driving back plate to the direction far away from the driving back plate, and at least two vapor deposition film layers comprise the light-emitting functional layer and the cathode; in the same light-emitting element, the orthographic projection of the cathode on the driving back plate is at least partially positioned outside the orthographic projection of the light-emitting functional layer on the driving back plate, so that the cathodes of adjacent light-emitting elements are all overlapped to the isolation column to be connected with each other.

The isolation column comprises a conductive structure and an insulating structure which are sequentially stacked from a direction close to the pixel definition layer to a direction far away from the pixel definition layer, the edge of the insulating structure protrudes out of the edge of the conductive structure to form an eave structure, the side surface of the conductive structure and the pixel definition layer enclose to form a concave area, and the cathode is at least partially positioned in the concave area and is lapped on the conductive structure.

Illustratively, within the same sub-pixel, the boundaries of the orthographic projections of the cathode and the light-emitting functional layer on the driving backboard exceed the boundaries of the orthographic projections of the anode; and along the width direction of the sub-pixel, a first distance d1 is arranged between the boundaries of the cathode and the anode, and a second distance d2 is arranged between the boundaries of the light-emitting functional layer and the anode; along the length direction of the sub-pixel, a third distance d3 is arranged between the boundaries of the cathode and the anode, and a fourth distance d4 is arranged between the boundaries of the light-emitting functional layer and the anode;

Wherein the first distance d1 is greater than or equal to the third distance d3, and the second distance d2 is greater than or equal to the fourth distance d4.

Illustratively, the isolation column has a first width d0 along the width and/or length direction of the sub-pixel, wherein the difference between the second distance d2 and the fourth distance d4 is smaller than the first width d0.

Illustratively, the display mother board includes at least two substrate areas arranged in a mixed manner, and each substrate area includes a plurality of single-sided board areas; the plurality of subpixels comprise subpixels of at least two different colors; the aspect ratios of the sub-pixels of the same color in different substrate areas are all within a threshold value, and the opening shapes are the same; and the subpixels in at least one of the substrate regions are configured to: when the vapor-deposited film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, at least part of the subpixels have an aspect ratio of greater than or equal to 1, and the length extension direction is the moving direction of the linear vapor deposition source; or when the vapor deposition film layer is formed by a vertical vapor deposition method, at least a part of the subpixels have an aspect ratio of 0.82 to 1.22.

Illustratively, the at least two substrate regions include a first substrate region and a second substrate region, and the single-sided board region in the first substrate region and the single-sided board region in the second substrate region are perpendicular to each other in the length direction.

Illustratively, the length extension direction of the same color sub-pixel in each of the substrate regions is the same.

Illustratively, the target aspect ratio of the sub-pixel is K1 within the first substrate region; in the second substrate region, the target aspect ratio of the sub-pixel is K2; wherein, when the vapor deposition film layer is formed based on a vertical vapor deposition method, the threshold value K is less than or equal to Kmax-1, wherein Kmax is the one of the maximum values of K1 and K2.

Illustratively, in the first substrate region, a plurality of the sub-pixels in the single panel region are arranged in m1 along the length direction of the sub-pixels and are arranged in n1 along the width direction of the sub-pixels, the length of the single panel region along the length direction of the sub-pixels is L1, the width of the single panel region along the width direction of the sub-pixels is W1, the length of a single sub-pixel lp1=l1/m 1, the width of a single sub-pixel mp1=w1/n 1,

A plurality of the sub-pixels in the single panel region are arranged with W2 along the length direction of the sub-pixels and with n2 along the width direction of the sub-pixels, the length of the single panel region along the length direction of the sub-pixels is L2, the width of the single panel region along the width direction of the sub-pixels is W2, the length of a single sub-pixel lp2=l2/n 2, the width of a single sub-pixel wp2=w2/n 2,

Where k1=lp1/Mp 1, k2=lp2/Wp 2.

In a second aspect, embodiments of the present disclosure also provide a method of manufacturing a display mother board for manufacturing the display mother board as described above; the method comprises the following steps:

Preparing a driving backboard;

Forming a plurality of light-emitting elements on the driving backboard, wherein the light-emitting elements are arranged in the corresponding sub-pixels, and the light-emitting elements comprise at least two vapor deposition film layers which are stacked in sequence from the direction close to the driving backboard to the direction far from the driving backboard; wherein,

The vapor deposition film layer is formed by adopting a linear vapor deposition source to perform horizontal vapor deposition, the length-to-width ratio of at least part of the sub-pixels is greater than or equal to 1, and the moving direction of the linear vapor deposition source is the length extending direction of the sub-pixels; or alternatively

The vapor deposition film layer is formed by adopting a vertical vapor deposition mode, and the aspect ratio of at least part of the sub-pixels is 0.82-1.22.

Illustratively, after said preparing the driving backplate, said method further comprises the steps of:

Forming a pixel defining layer and a separation column on the driving backboard, wherein a plurality of pixel openings are formed in the pixel defining layer so as to define a plurality of sub-pixels, and the separation column is positioned on one side of the pixel defining layer, which is far from the driving backboard, and is arranged around the pixel openings;

the forming a plurality of light emitting elements on the driving back plate specifically includes:

Forming an anode within the pixel opening;

And sequentially depositing a plurality of vapor deposition materials on one side of the anode far away from the driving backboard to form a light-emitting functional layer and a cathode, wherein in the same light-emitting element, the orthographic projection of the cathode on the driving backboard is at least partially positioned outside the orthographic projection of the light-emitting functional layer on the driving backboard, so that the cathodes of adjacent light-emitting elements are overlapped to the isolation column to be connected with each other.

In an exemplary embodiment, when the plurality of sub-pixels includes at least two color sub-pixels, the evaporating materials are sequentially deposited on a side of the anode, which is far away from the driving back plate, so as to form a light-emitting functional layer and a cathode, and specifically includes:

Sequentially performing the patterning steps of the luminous elements corresponding to the sub-pixels of each color to complete the patterning of the luminous elements of the sub-pixels of all colors; wherein, for any color sub-pixel, the patterning step of the light emitting element comprises:

sequentially depositing a plurality of vapor deposition materials on the whole surface of one side of the anode, which is far away from the driving backboard, so as to form a light-emitting functional layer and a cathode in all the sub-pixels;

Carrying out whole-surface film packaging on one side of the cathode far from the driving backboard;

And removing the luminous functional layer and the cathode in the other sub-pixels except the sub-pixel of the current color by adopting a photoetching mode so as to complete the patterning step of the sub-pixel of the current color.

In the method, when the vapor deposition film layer is formed by horizontal vapor deposition using a linear vapor deposition source or when the vapor deposition film layer is formed by vertical vapor deposition, the vapor deposition angle α of the vapor deposition source is 60 to 90 °.

In a third aspect, the present disclosure also provides a display panel, which is a single display panel formed after dividing the display mother board based on the single panel region as described above.

The beneficial effects brought by the embodiment of the disclosure are as follows:

In the above-mentioned scheme, in the light-emitting element of the display mother board, a part of the film layer is a vapor deposition film layer formed by vapor deposition, and by improving the arrangement size of the sub-pixels on the display mother board, for example, when the vapor deposition film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, the aspect ratio of the sub-pixels is greater than or equal to 1, and the length extension direction of the sub-pixels is the moving direction of the linear vapor deposition source; or when the vapor deposition film layer is formed based on a vertical vapor deposition method, the aspect ratio of the sub-pixel is 0.82-1.22, so that the purpose of limiting the film boundary position of the vapor deposition film layer of the light-emitting element in the sub-pixel can be achieved, and the problem that the display product is poor due to the deviation between the film boundary position of the vapor deposition film layer and the design caused by the existence of shadow effect in the vapor deposition process can be solved.

Drawings

FIG. 1 is a schematic diagram showing the principle that the existence of shadow effect may cause poor overlap of cathode and separator;

FIG. 2 illustrates one of the pixel arrangements of a display motherboard in some embodiments of the present disclosure;

FIG. 3 is a second schematic diagram of a pixel arrangement of a display motherboard according to some embodiments of the present disclosure;

FIG. 4 is a schematic cross-sectional view of a display motherboard in some embodiments of the present disclosure;

fig. 5 is a schematic view showing a vapor deposition film layer formed by vapor deposition in the case where the vapor deposition angles are different;

FIG. 6 is a schematic diagram showing the distribution of layers between a cathode, an anode and a light-emitting functional layer in a subpixel on a motherboard according to some embodiments of the present disclosure;

FIG. 7 is a second diagram showing the distribution of layers between the cathode, anode and light-emitting functional layer in the sub-pixels on the mother substrate according to some embodiments of the present disclosure;

FIG. 8 shows an image of a subpixel viewed by a fluorescence microscope;

FIG. 9 is a third schematic diagram of a pixel arrangement of a display motherboard in some embodiments of the present disclosure;

FIG. 10 is a diagram illustrating a pixel arrangement of a display motherboard in accordance with some embodiments of the present disclosure.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It will be apparent that the described embodiments are some, but not all, of the embodiments of the present disclosure. All other embodiments, which can be made by one of ordinary skill in the art without the need for inventive faculty, are within the scope of the present disclosure, based on the described embodiments of the present disclosure.

Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

Before describing in detail a display mother board, a manufacturing method thereof, and a display panel provided by embodiments of the present disclosure, the following description is made on related technologies:

in a process for manufacturing an OLED (Organic Light-Emitting Diode), an OLED (Organic Light-Emitting Diode) Light-Emitting element includes vapor deposition film layers such as a Light-Emitting material layer, and the vapor deposition film layers may be formed by depositing a vapor deposition material into sub-pixels of a driving back plate by vapor deposition. Due to shadow effect in the evaporation process, the design size or design position of the evaporated film formed by actual evaporation is deviated from that of the film, and thus poor product appearance is caused.

In an OLED organic light emitting device, there are two evaporation modes of each evaporation film layer: vertical vapor deposition process and horizontal vapor deposition process. The main current approach of AMOLED is to use a linear evaporation source for horizontal evaporation.

Specifically, the horizontal vapor deposition process is to horizontally place a substrate to be vapor deposited, wherein a linear vapor deposition source is positioned above or below the substrate to be vapor deposited, the linear vapor deposition source horizontally moves along a certain direction, and a vapor deposition material is vertically vapor deposited on the substrate to be vapor deposited. The vertical vapor deposition process is to vertically arrange a substrate to be vapor deposited, wherein a vapor deposition source is positioned on the side surface of the substrate to be vapor deposited, and vapor deposition materials are horizontally vapor deposited on the substrate to be vapor deposited.

The present inventors have found through studies that one of the causes of the above-mentioned disadvantages is: in the vapor deposition process, the alignment condition of the vapor deposition source and the substrate to be vapor deposited can be judged theoretically only by judging the relative position between the center of the vapor deposition source and the center of the corresponding sub-pixel on the substrate to be vapor deposited. However, in practical applications, the vapor deposition source has a certain vapor deposition angle, and there is a shadow effect during vapor deposition, so that there is a possibility that the center of the light emitting functional layer formed by the actual vapor deposition is not necessarily the center of the designed sub-pixel. In other words, in the vapor deposition process, the vapor deposition angle needs to be controlled, and the boundary position of the vapor deposition film layer may deviate from the designed size or designed position of the film layer due to the shadow effect.

In addition, in the process of manufacturing the OLED organic light emitting device, in order to improve production efficiency, the display panels are not manufactured individually, but a display mother board including a plurality of spaced and independent single panel regions is manufactured first. After the display mother board is manufactured, the display mother board is cut based on the single panel area to obtain a plurality of display panels. When the display panel mother board is manufactured, the same film layer on the area where each display panel is positioned (namely a single panel area) is manufactured synchronously.

Accordingly, in order to improve the above-mentioned problems, embodiments of the present disclosure provide a display motherboard, a manufacturing method thereof, and a display device, which can improve the problem that the boundary position of the vapor deposition film layer deviates from the design time position, resulting in poor product.

As shown in fig. 2 and 3, the display mother board 1 provided in the embodiment of the disclosure has a plurality of single panel areas A1 distributed at intervals, where the single panel area A1 is an area where a single display panel is formed after the display mother board 1 is divided based on the single panel area A1, and a plurality of sub-pixels P are disposed in each single panel area A1.

In terms of the stacked structure, as shown in fig. 4, the display mother board 1 includes a driving back board 100 and a plurality of light emitting elements 200 disposed on the driving back board 100, the light emitting elements 200 are disposed in the corresponding sub-pixels P, and the light emitting elements 200 include at least two vapor deposition film layers B stacked in sequence from the direction close to the driving back board 100 to the direction far from the driving back board 100. The driving backboard 100 may include a substrate 110 and a driving circuit layer 120 disposed on the substrate 110, where the driving circuit layer 120 is used to drive the sub-pixels P to emit light.

Wherein at least part of the subpixels P are configured to:

as shown in fig. 2, when the vapor deposition layer B is formed by horizontal vapor deposition using a linear vapor deposition source, the aspect ratio of the sub-pixel P is 1 or more, and the longitudinal extension direction of the sub-pixel P is the moving direction of the linear vapor deposition source (schematically shown as X direction in the figure);

alternatively, as shown in fig. 3, when the vapor deposition layer B is formed by a vertical vapor deposition method, the aspect ratio of the subpixel P is 0.82 to 1.22.

For the horizontal vapor deposition mode, as shown in fig. 1, the vapor deposition source 10 has a certain vapor deposition angle α in the horizontal movement (Scan) direction of the linear vapor deposition source 10, and the vapor deposition angle α of the vapor deposition material on the substrate 20 to be vapor deposited is adjusted and changed along with the movement of the linear vapor deposition source 10 in the horizontal movement direction X of the linear vapor deposition source 10, in other words, the vapor deposition angle α is controllable in the horizontal movement direction X of the linear vapor deposition source 10; in the horizontal direction perpendicular to the linear vapor deposition source 10, the angle at which the vapor deposition material is deposited on the substrate 20 to be deposited does not change with the movement of the linear vapor deposition source 10, in other words, the vapor deposition angle α is not controllable in the direction perpendicular to the horizontal movement direction X of the linear vapor deposition source 10.

In the above-mentioned scheme, in order to reduce the deviation between the actually evaporated deposition film B and the design size, the arrangement mode of the sub-pixels P arranged on the display mother board 1 is improved, and at least some of the sub-pixels P in the display mother board 1 are arranged to be parallel to the horizontal moving direction X of the linear deposition source 10 in the length direction, so that the size of the shadow (shadow) area of the deposition film B corresponding to at least some of the sub-pixels P in the length direction of the sub-pixels P is more controllable, that is, the boundary position of the deposition film B in the length direction of the sub-pixels P is controllable, which is more beneficial to reducing the deviation between the boundary of the deposition film B and the design size compared with the scheme in which the boundary position of the deposition film B in the width direction of the sub-pixels P is controllable.

For the vertical evaporation mode, the center of the evaporation source is right at the center of the sub-pixel P, the evaporation source has a certain evaporation angle α, an evaporation shadow is formed in the peripheral direction of the sub-pixel P, if the difference between the length and the width of the sub-pixel P is large, the difference between the size of the evaporation shadow in the length and the width of the sub-pixel P is correspondingly large, in other words, the uniformity of the deviation of the boundary position of the evaporation film B in the peripheral direction is poor, so, in order to ensure that the size of the evaporation shadow area in the peripheral direction of the sub-pixel P is more uniform, when the evaporation film B is formed based on the vertical evaporation mode, the aspect ratio of the sub-pixel P may be approximately 1:1, for example, the aspect ratio of the sub-pixel P may be 0.82 to 1.22.

In some exemplary embodiments, as shown in fig. 4, the light emitting element 200 may include an anode 210, a light emitting functional layer 220, and a cathode 230 stacked, and the light emitting functional layer 220 may include not only a light emitting material layer (EL layer) but also various at least one thin film such as a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), an Electron Injection Layer (EIL), and the like. In the process of manufacturing the light emitting element 200, a plurality of vapor deposition materials may be used to form each of the thin films, and each of the thin films may be a vapor deposition film B formed by vapor deposition of each of the vapor deposition materials on a substrate, and the light emitting element 200 is finally completed by stacking a plurality of the films.

In addition, the sub-pixel packaging technology is a metal-free mask self-alignment pixelation technology. The technology can obviously improve the product performance of AMOLED (Active-matrix organic light-emitting diode, active matrix organic light emitting diode or Active matrix organic light emitting diode), greatly increase the effective light emitting area (aperture ratio) of the AMOLED, and is favorable for greatly improving the pixel density.

In some exemplary embodiments, the display mother board 1 may be a display mother board obtained by adopting a sub-pixel packaging technology. Specifically, as shown in fig. 4, the display mother board 1 further includes a pixel defining layer 300, a spacer 400, and a pixel packaging layer 500, wherein the pixel defining layer 300 is disposed on the driving back board 100, and a plurality of pixel openings 310 are provided to define a plurality of sub-pixels P; the isolation column 400 is located at a side of the pixel defining layer 300 away from the driving backplate 100, and is disposed around the pixel opening 310; the pixel encapsulation layer 500 covers a side of the light emitting element 200 away from the driving backplate 100; wherein the light emitting element 200 includes an anode 210, a light emitting functional layer 220, and a cathode 230 stacked in this order from the direction close to the driving back plate 100 to the direction far from the driving back plate 100, and at least two of the vapor deposition film layers B include the light emitting functional layer 220 and the cathode 230; in the same light-emitting device 200, the front projection of the cathode 230 on the driving back plate 100 is at least partially outside the front projection of the light-emitting functional layer 220 on the driving back plate 100, so that the cathodes 230 of adjacent light-emitting devices 200 are all overlapped to the isolation pillars 400 to be connected to each other.

As shown in fig. 4, the isolation column 400 includes a conductive structure 410 and an insulating structure 420 sequentially stacked from the pixel defining layer 300 toward the pixel defining layer 300, wherein an edge of the insulating structure 420 protrudes from an edge of the conductive structure 410 to form an eave structure 430, the eave structure 430 encloses a concave region C with a side surface of the conductive structure 410 and the pixel defining layer 300, and the cathode 230 is at least partially positioned in the concave region C and is overlapped to the conductive structure 410.

With the above scheme, the edge of the insulating structure 420 protrudes from the edge of the conductive structure 410 to form the eave structure 430, and the eave structure 430, the side surface of the conductive structure 410 and the pixel defining layer 300 enclose to form the concave region C, so that the isolation column 400 can be used as an insulating partition wall to separate different sub-pixels P, where the conductive structure 410 can be connected with the cathode 230 between two adjacent sub-pixels P.

The specific preparation process of the display mother board 1 adopting the sub-pixel packaging technology can be as follows:

First, a pixel defining layer 300 is formed on the driving back plate 100 prepared with the driving circuit layer 120, and a plurality of pixel openings 310 are defined on the pixel defining layer 300;

then, a barrier rib 400 is formed at a side of the pixel defining layer 300 away from the driving backplate 100, the barrier rib 400 is located between the adjacent pixel openings 310, and the barrier rib 400 includes a conductive structure 410 and an insulating structure 420 sequentially stacked in a direction from the pixel defining layer 300 to the pixel defining layer 300;

Then, carrying out full-surface evaporation to finish the deposition of the first color full-set OLED luminous functional layer 220 and the cathode 230, then carrying out full-surface film encapsulation (first inorganic layer), and selectively removing the parts which do not need to remain on the substrate (which is a key step for eliminating the fine metal mask) through the processes of gluing, exposing, developing, etching, stripping and the like, thereby finishing the patterning of the first color, and then repeating the process twice to finish the full-color patterning of three primary colors of RGB;

then, the obtained substrate was subjected to whole-surface film packaging to obtain the display mother board 1.

On the prepared display mother board 1, the conductive structures 410 of the isolation columns 400 need to overlap with the cathode 230, but do not overlap with the light-emitting functional layer 220.

However, in the related art, in the display device adopting the sub-pixel packaging technology, due to the shadow effect of the evaporation film B in the light emitting functional layer 220 during the evaporation, the deviation between the boundary position and the design position of the light emitting functional layer 220 may occur, which may cause the defects of uneven overlapping and incapability of overlapping between the cathode 230 and the spacer 400.

In the display mother board 1 provided in the embodiment of the present disclosure, in an application scenario in which the display mother board 1 adopts a sub-pixel packaging technology, aiming at a horizontal evaporation mode, the sub-pixels P are configured such that the length direction of the sub-pixels P is along the horizontal movement direction of the linear evaporation source 10, so that deviation between the boundary positions and design dimensions of the light-emitting functional layer 220 and the cathode 230 can be reduced, and the problem that the cathode 230 cannot be effectively overlapped with the isolation column 400 can be improved; in addition, regarding the vertical vapor deposition method, the arrangement method of the sub-pixels P may be configured such that the aspect ratio of the sub-pixels P is approximately 1:1, for example, the aspect ratio of the sub-pixel P may be 0.82 to 1.22, so as to ensure that the evaporation shadows of the light-emitting functional layer 220 and the cathode 230 in the peripheral direction of the sub-pixel P are uniform, thereby ensuring the overlapping uniformity between the cathode 230 and the isolation column 400 in the peripheral direction of the sub-pixel P.

In some exemplary embodiments, as shown in fig. 6 and 7, the boundaries of the orthographic projections of the cathode 230 and the light emitting functional layer 220 on the driving backplate 100 are all beyond the boundaries of the orthographic projections of the anode 210 within the same sub-pixel P. Along the width direction of the sub-pixel P, a first distance d1 is provided between the boundary between the cathode 230 and the anode 210, and a second distance d2 is provided between the boundary between the light emitting functional layer 220 and the anode 210; along the length direction of the sub-pixel P, a third distance d3 is provided between the boundary between the cathode 230 and the anode 210, and a fourth distance d4 is provided between the boundary between the light emitting functional layer 220 and the anode 210; the first distance d1 is greater than or equal to the third distance d3, and the second distance d2 is greater than or equal to the fourth distance d4.

Specifically, as shown in fig. 8, when the aspect ratio of the sub-pixel P is greater than 1, the display mother substrate 1 obtained by the sub-pixel packaging technology is observed by a fluorescence microscope when the light emitting element 200 is formed by a horizontal vapor deposition method, b > a, where b is the distance between the boundary of the optical functional layer in the length direction of the sub-pixel P and the boundary of the anode 210, and a is the distance between the edge of the optical functional layer in the width direction of the sub-pixel P and the boundary of the anode 210. That is, the shadow area size caused by the shadow effect in the conventional subpixel P along its length direction is larger.

In some exemplary embodiments of the present disclosure, when the aspect ratio of the sub-pixel P is greater than 1, a schematic diagram of the distribution of the layers in the light emitting element 200 is shown in fig. 6. As shown in fig. 6, when the film layer B of the light emitting element 200 is formed by the horizontal vapor deposition method, when the subpixels P are arranged such that the longitudinal direction is parallel to the moving direction X of the linear vapor deposition source 10, the distribution of the film layer is obtained as follows: a distance between the boundary of the cathode 230 and the anode 210 in the width direction of the sub-pixel P is a first distance d1, and a distance between the boundary of the cathode and the anode in the length direction of the sub-pixel P is a second distance d2, wherein d1 is greater than or equal to d2; the distance between the light emitting functional layer 220 and the boundary of the anode 210 in the width direction Y of the sub-pixel P is a third distance d3, and the distance in the length direction of the sub-pixel P is a fourth distance d4, wherein d3 is greater than or equal to d4.

It can be seen that, in the case where the vapor deposition film layer B of the light emitting element 200 is formed by the horizontal vapor deposition method, when the sub-pixels P are arranged such that the longitudinal direction is parallel to the moving direction of the linear vapor deposition source 10, the width of the shadow region in the longitudinal direction of the sub-pixels P can be effectively reduced.

Similarly, when the aspect ratio of the sub-pixel P is close to 1:1, the distribution of the layers in the light emitting device 200 is schematically shown in fig. 7. As shown in fig. 7, when the film layer B of the light emitting element 200 is formed by the horizontal vapor deposition method, when the subpixels P are arranged such that the longitudinal direction is parallel to the moving direction of the linear vapor deposition source 10, the distribution of the film layer is obtained as follows: a distance between the boundary of the cathode 230 and the anode 210 in the width direction of the sub-pixel P is a first distance d1, and a distance between the boundary of the cathode and the anode in the length direction X of the sub-pixel P is a second distance d2, wherein d1 is greater than or equal to d2; the distance between the light emitting functional layer 220 and the boundary of the anode 210 in the width direction Y of the sub-pixel P is a third distance d3, and the distance in the length direction of the sub-pixel P is a fourth distance d4, wherein d3 is greater than or equal to d4. It can be seen that, in the case where the vapor deposition film layer B of the light emitting element 200 is formed by the horizontal vapor deposition method, when the sub-pixels P are arranged such that the longitudinal direction is parallel to the moving direction X of the linear vapor deposition source 10, the width of the shadow region in the longitudinal direction of the sub-pixels P can be effectively reduced.

Further, in some exemplary embodiments, the isolation column 400 has a first width d0 along a width and/or length direction of the sub-pixel P, wherein a difference between the second distance d2 and the fourth distance d4 is smaller than the first width d0. The isolation column 400 may serve as an insulating partition wall between adjacent sub-pixels P to separate the different sub-pixels P, and in order to ensure that the light emitting function layers 220 of the adjacent sub-pixels P are separated, the isolation column 400 needs to have a certain width, i.e., a first width d0, wherein a difference between the second distance d2 and the fourth distance d4 is smaller than the first width d0.

It should be noted that, in the embodiment provided in the present disclosure, the sub-pixel P may be any suitable shape such as a quadrangle, a polygon, or a circle.

In order to achieve maximum utilization of the substrate 110 of the display motherboard 1, OLED products of different sizes, i.e. mixed alignment (MMG), can be prepared on the same substrate 110.

In some exemplary embodiments of the present disclosure, as shown in fig. 9 and 10, the display mother substrate 1 includes at least two substrate regions 11 arranged in a mixed manner, and each of the substrate regions 11 includes a plurality of the single panel regions A1, respectively. Here, the single panel area A1 in the different substrate areas 11 may be different sizes of OLED display panels based on the cut display mother board 1.

Wherein a plurality of the sub-pixels P include sub-pixels P of at least two different colors, for example, RGB sub-pixels P; the aspect ratios of the sub-pixels P of the same color in different substrate regions 11 are all within a threshold value, and the opening shapes are the same, for example, the opening shapes of the R sub-pixels P in two substrate regions 11 are the same, and the aspect ratios are all within a threshold value; and, the sub-pixels P in at least one of the substrate areas 11 are configured to: as shown in fig. 9, when the vapor-deposited film layer B is formed by horizontal vapor deposition using the linear vapor deposition source 10, at least a part of the sub-pixels P have an aspect ratio of 1 or more and a longitudinal extension direction of the linear vapor deposition source 10; alternatively, as shown in fig. 10, when the vapor deposition layer B is formed by a vertical vapor deposition method, at least a part of the subpixels P have an aspect ratio of 0.82 to 1.22.

In the above-mentioned scheme, the aspect ratios of the sub-pixels P of the same color are all within the threshold, which may specifically mean that the aspect ratios of the sub-pixels P of the same color in the different substrate regions 11 are close to each other, and the aspect ratios of the sub-pixels P of the same color in the different substrate regions 11 are each in the range of 0.82-1.22.

It should be further noted that the above solution may be applied to a horizontal evaporation mixed arrangement situation or a vertical evaporation mixed arrangement situation, and the effective overlap between the cathode 230 and the isolation column 400 in each product in the mixed arrangement situation is ensured by designing the sub-pixels P with the same color in different substrate areas 11 to have similar opening shapes and similar aspect ratios, in other words, designing all the sub-pixels P with the same color in the display mother board 1 in the mixed arrangement to have similar opening shapes and similar aspect ratios.

Specifically, the arrangement of the subpixels P in the substrate region 11 may be as follows:

In some embodiments, as shown in fig. 9, at least two of the substrate regions 11 include a first substrate region 11A and a second substrate region 11B, and the length directions of the single-sided board region A1 in the first substrate region 11A and the single-sided board region A1 in the second substrate region 11B are perpendicular to each other. In this way, when the aspect ratio of the sub-pixel P is greater than 1, the utilization rate of the substrate 110 can be improved as much as possible while the different substrate regions 11 are mixed.

In another embodiment, as shown in fig. 9, at least two of the substrate regions 11 include a first substrate region 11A and a second substrate region 11B, and the single-sided board region A1 in the first substrate region 11A and the single-sided board region A1 in the second substrate region 11B may also be disposed parallel to each other in the length direction.

Furthermore, in some exemplary embodiments, the length extension directions of the same color sub-pixels P in different substrate areas 11 are the same.

Referring to fig. 5, when the sub-pixel packaging technology is used to form the evaporation coating layer B in the sub-pixel P, the evaporation source 10 has a certain evaporation angle α without a metal mask, and if the distance between the evaporation source 10 and the substrate 20 to be evaporated is S, the dimension a of the evaporation coating layer B in a certain direction in the sub-pixel P can be calculated based on the formula a=cotα×s.

In the conventional embodiment shown in fig. 5 (a), the vapor deposition angle α is denoted as a first vapor deposition angle α1; fig. 5 (b) shows the vapor deposition angle α in the embodiment of the present application, denoted as a second vapor deposition angle α2, and α1 is smaller than α2. As shown in the drawing, the size of the vapor deposition layer B is larger when the vapor deposition angle α of the vapor deposition source is α1 than when the vapor deposition angle α of the vapor deposition source 10 is α2. Therefore, in order to ensure that the shadow region of the light-emitting functional layer 220 does not affect the overlap between the cathode 230 and the spacer 400, in some embodiments of the present disclosure, the evaporation angle α may be increased compared to the conventional evaporation angle α when the evaporation film B such as the light-emitting functional layer 220 is formed by evaporation.

Exemplary, the vapor deposition angle α in the vapor deposition process in the conventional technology is about 50 ° to 52 °, and in some embodiments of the present application, the vapor deposition angle α may be 60 ° to 90 °. The specific value of the evaporation angle alpha can be adjusted and selected according to the size of each evaporation film layer B in the sub-pixel P. Illustratively, the vapor deposition angle α may be 65 °.

The application is further described below with respect to specific application scenarios.

In the case where the light emitting element 200 of the sub-pixel P forms each vapor deposition film layer B based on horizontal vapor deposition:

When the display mother boards 1 are arranged in a mixed mode, the vapor deposition angle alpha is controllable in the horizontal moving direction of the vapor deposition source, but the vapor deposition angle alpha is uncontrollable in the direction perpendicular to the moving direction of the vapor deposition source. In order to ensure that the cathode 230 is effectively overlapped with the barrier ribs 400, the arrangement of the sub-pixels P may be defined as follows: as shown in fig. 9, the shapes of the openings of the sub-pixels P of the same color in the different substrate areas 11 are close to or the same as each other, and the length direction of the sub-pixels P of the same color in any one of the substrate areas 11 is the same, and the length of the sub-pixels P of the same color in at least one of the substrate areas 11 is the same as the horizontal moving direction of the vapor deposition source. The aspect ratio of the sub-pixel P may be greater than or equal to 1. The shape of the sub-pixel P may include, but is not limited to, any suitable shape such as a quadrilateral, a polygon, or a circle.

In the first substrate region 11A, a plurality of the sub-pixels P in the single panel region A1 are arranged in m1 along the length direction of the sub-pixels P, and n1 are arranged in the width direction of the sub-pixels P, the length of the single panel region A1 along the length direction of the sub-pixels P is L1, the width of the single panel region A1 along the width direction of the sub-pixels P is W1, the length of each sub-pixel P is lp1=l1/m 1, and the width of each sub-pixel P is wp1=w1/n 1.

In the second substrate region 11B, W2 sub-pixels P are arranged in the length direction of the sub-pixel P, n2 sub-pixels P are arranged in the width direction of the sub-pixel P, the length of the single-panel region A1 in the length direction of the sub-pixel P is L2, the width of the single-panel region A1 in the width direction of the sub-pixel P is W2, the length of each sub-pixel P is l2=l2/n 2, and the width of each sub-pixel P is wp2=w2/n 2.

In the case where the light emitting element 200 of the sub-pixel P forms each vapor deposition film layer B by vertical vapor deposition:

when the display mother board 1 is not arranged in a mixed manner, in order to ensure that the cathode 230 and the isolation column 400 are uniformly overlapped in all directions around the sub-pixel P, the aspect ratio of the sub-pixel P with the same color is close to that of the sub-pixel P, and the aspect ratio of the sub-pixel P can be within 0.82-1.22. Specifically, a plurality of the sub-pixels P in the single panel region A1 are arranged in m0 along the length direction of the sub-pixels P, and are arranged in n0 along the width direction of the sub-pixels P, the length of the single panel region A1 along the length direction of the sub-pixels P is L0, the width of the single panel region A1 along the width direction of the sub-pixels P is W0, the length lp0=l0/m 0 of a single sub-pixel P, and the width wp0=w0/n 0 of a single sub-pixel P. The target aspect ratio of the same color sub-pixels P is less than or equal to a threshold K that is less than or equal to K0-1, k0=lp0/Wp 0.

When the display mother board 1 is arranged in a mixed manner, in the first substrate area 11A, a plurality of the sub-pixels P in the single panel area A1 are arranged in m1 along the length direction of the sub-pixels P, and n1 are arranged in the width direction of the sub-pixels P, the length of the single panel area A1 along the length direction of the sub-pixels P is L1, the width of the single panel area A1 along the width direction of the sub-pixels P is W1, the length of each sub-pixel P is lp1=l1/m 1, and the width of each sub-pixel P is wp1=w1/n 1.

In the second substrate region 11B, W2 sub-pixels P are arranged in the length direction of the sub-pixel P, n2 sub-pixels P are arranged in the width direction of the sub-pixel P, the length of the single-panel region A1 in the length direction of the sub-pixel P is L2, the width of the single-panel region A1 in the width direction of the sub-pixel P is W2, the length of each sub-pixel P is l2=l2/n 2, and the width of each sub-pixel P is wp2=w2/n 2. Theoretically, the target aspect ratio k1=lp1/Mp 1 of the sub-pixels P in the first substrate region 11A; the target aspect ratio k2=lp2/Wp 2 of the sub-pixel P in the second substrate region 11B.

Wherein, when the vapor deposition film layer B is formed based on a vertical vapor deposition method, the aspect ratio of the sub-pixels P with the same color is smaller than or equal to a threshold value K, and the threshold value K is smaller than or equal to Kmax-1, wherein Kmax is the maximum value of K1 and K2.

In some exemplary embodiments of the present disclosure, the driving circuit layer 120 is used to form the pixel driving circuit, and some conductive connection parts. For example: as shown in fig. 4, the driving circuit layer 120 includes an isolation layer Bar, an active layer Poly, a first gate insulating layer GI1, a first gate metal layer gate1, a second gate insulating layer GI2, a second gate metal layer gate2, an interlayer insulating layer ILD, a first source drain metal layer SD1, a first planarization layer PLN1, a second source drain metal layer SD2, and a second planarization layer PLN2, which are stacked in this order in a direction away from the driving back plane 100, but is not limited thereto.

Furthermore, in some embodiments, as shown in fig. 4, the display motherboard 1 may further include: the thin film encapsulation layer 600 is disposed on a side of the pixel encapsulation layer 500 away from the driving back plate 100. The thin film encapsulation layer 600 may include an organic encapsulation layer IJP and a second inorganic encapsulation layer CVD2 sequentially stacked in a direction away from the driving back plate 100, for example.

Furthermore, as shown in fig. 4, in some embodiments, the display motherboard 1 may further include: the color film layer 700 is disposed on the driving back plate 100, the color film layer 700 is disposed on a side of the thin film packaging layer 600 away from the driving back plate 100, and the color film layer 700 includes a color film pattern 710 and a black matrix pattern 720, where an orthographic projection of the black matrix pattern 720 on the driving back plate 100 at least partially overlaps an orthographic projection of the isolation column 400 on the driving back plate 100.

Illustratively, the color film layer 700 includes a red color film pattern CFR, a green color film pattern CFG, and a blue color film pattern CFB, and the black matrix pattern (BM) 620 is located between adjacent color film patterns 710.

Further, FMLOC (Flexible Multi Layer On Cell, flexible multilayer cover surface) refers to a technology of fabricating a touch functional layer on the outside of the thin film encapsulation layer 600 in the display substrate. FMLOC can integrate the display structure and the touch structure together, has advantages such as frivolous, collapsible, can satisfy product demands such as flexible folding, narrow frame.

In some exemplary embodiments of the present disclosure, as shown in fig. 4, the display motherboard 1 further includes: the touch functional layer 800, the touch functional layer 800 includes a first touch layer TMA and a second touch layer TMB, patterns of the first touch layer TMA and the second touch layer TMB are connected to each other to form a plurality of touch electrode patterns, and at least one of the first touch layer TMA and the second touch layer TMB is located at a side of the thin film encapsulation layer 600 away from the driving back plate 100.

For example, in some exemplary embodiments of the present disclosure, as shown in fig. 4, the first touch layer TMA and the second touch layer TMB are both disposed between the thin film encapsulation layer 600 and the color film layer 700.

In addition, in a second aspect, the embodiment of the present disclosure also provides a manufacturing method of the display mother board 1, which is used for manufacturing the display mother board 1 provided by the embodiment of the present disclosure; the method comprises the following steps:

Step S01, preparing a driving backboard 100;

The driving back plate 100 may include a substrate 110, a driving circuit layer 120 disposed on the substrate 110, and the driving circuit layer 120 is used for driving the sub-pixels P to emit light, for example, the driving circuit layer 120 may include a gate line, a data line, a thin film transistor, and the like.

Step S03, forming a plurality of light emitting elements 200 on the driving back plate 100, wherein the light emitting elements 200 are disposed in the corresponding sub-pixels P, and the light emitting elements 200 include at least two vapor deposition film layers B stacked in sequence from the direction close to the driving back plate 100 to the direction far from the driving back plate 100; wherein,

The vapor deposition film layer B is formed by horizontal vapor deposition using a linear vapor deposition source 10, at least part of the sub-pixels P have an aspect ratio greater than or equal to 1, and the moving direction of the linear vapor deposition source 10 is the length extending direction of the sub-pixels P; or alternatively

The vapor deposition film layer B is formed by adopting a vertical vapor deposition mode, and the aspect ratio of at least part of the sub-pixels P is 0.82-1.22.

Obviously, the manufacturing method of the display mother board 1 provided in the embodiment of the present disclosure also has the beneficial effects brought by the display mother board 1 provided in the embodiment of the present disclosure, and will not be described herein again.

Illustratively, after step S01 described above, prior to step S03, the method further includes the steps of:

Step S02, forming a pixel defining layer 300 and a spacer column 400 on the driving back plate 100, wherein a plurality of pixel openings 310 are formed on the pixel defining layer 300 to define a plurality of the sub-pixels P, and the spacer column 400 is located on a side of the pixel defining layer 300 away from the driving back plate 100 and is disposed around the pixel openings 310;

The forming of the plurality of light emitting elements 200 on the driving back plate 100 specifically includes:

Step S021, forming an anode 210 in the pixel opening 310;

Step S022, sequentially depositing a plurality of vapor deposition materials on a side of the anode 210 far from the driving back plate 100 to form a light emitting functional layer 220 and a cathode 230, wherein in the same light emitting element 200, the orthographic projection of the cathode 230 on the driving back plate 100 is at least partially located outside the orthographic projection of the light emitting functional layer 220 on the driving back plate 100, so that the cathodes 230 of adjacent light emitting elements 200 are all overlapped to the isolation columns 400 to be connected with each other.

For example, when the plurality of sub-pixels P includes at least two color sub-pixels P, the step S022 specifically includes: sequentially performing patterning steps of the light emitting elements 200 corresponding to the sub-pixels P of each color to complete patterning of the light emitting elements 200 of all the sub-pixels P of each color; the patterning step of the light emitting element 200 for any color sub-pixel P includes:

Step S0221, sequentially depositing a plurality of vapor deposition materials on the entire surface of the anode 210 on the side far away from the driving back plate 100, so as to form a light emitting functional layer 220 and a cathode 230 in all the sub-pixels P;

step S0222, carrying out whole-surface film packaging on one side of the cathode 230 far away from the driving backboard 100;

In step S0223, the light emitting functional layer 220 and the cathode 230 in the other sub-pixels P except the sub-pixel P with the current color are removed by photolithography to complete the patterning step of the sub-pixel P with the current color.

In the method, for example, when the vapor deposition film B is formed by horizontal vapor deposition using the linear vapor deposition source 10 or when the vapor deposition film B is formed by vertical vapor deposition, the vapor deposition angle α of the vapor deposition source is 60 ° to 90 °.

For example, the distance between the evaporation source and the surface to be evaporated on the driving back plate 100 is S, and the evaporation angle α of the evaporation source and the opening size a of the sub-pixel P satisfy the following relationship: a=s×cotα. The opening size a of the sub-pixel herein may refer to the length or width of the sub-pixel.

In a third aspect, the embodiment of the present disclosure further provides a display panel, which is a single display panel formed after dividing the display mother board 1 provided in the embodiment of the present disclosure based on the single panel area A1. Obviously, the display panel provided in the embodiment of the present disclosure also has the beneficial effects brought by the display motherboard 1 provided in the embodiment of the present disclosure, and will not be described herein again.

It should be noted that, the display panel may be: any display panel with display function such as a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and the like, wherein the display panel can also comprise a flexible circuit board, a printed circuit board, a backboard and the like. The display panel includes, but is not limited to, a liquid crystal display panel, an organic light emitting diode display panel, and the like, by way of example.

The following points need to be described:

(1) The drawings of the embodiments of the present disclosure relate only to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

(2) In the drawings for describing embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced for clarity, i.e., the drawings are not drawn to actual scale. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.

(3) The embodiments of the present disclosure and features in the embodiments may be combined with each other to arrive at a new embodiment without conflict.

The above is merely a specific embodiment of the disclosure, but the protection scope of the disclosure should not be limited thereto, and the protection scope of the disclosure should be subject to the claims.

Claims (15)

1. A display mother board is characterized by comprising a plurality of single panel areas which are distributed at intervals, wherein a plurality of sub-pixels are arranged in each single panel area; the display mother board comprises a drive backboard and a plurality of light-emitting elements arranged on the drive backboard, wherein the light-emitting elements are arranged in the corresponding sub-pixels, and each light-emitting element comprises at least two vapor deposition film layers which are sequentially stacked in a direction from being close to the drive backboard to being far away from the drive backboard; wherein at least part of the subpixels are configured to:

When the vapor deposition film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, the length-width ratio of the sub-pixel is greater than or equal to 1, and the length extension direction of the sub-pixel is the moving direction of the linear vapor deposition source; or alternatively

When the vapor deposition layer is formed by a vertical vapor deposition method, the aspect ratio of the sub-pixel is 0.82 to 1.22.

2. The display motherboard of claim 1, further comprising:

The pixel definition layer is arranged on the driving backboard and provided with a plurality of pixel openings so as to limit a plurality of sub-pixels;

An isolation column located at a side of the pixel defining layer away from the driving back plate and disposed around the pixel opening; and

A pixel encapsulation layer covering a side of the light emitting element away from the driving back plate; wherein,

The light-emitting element comprises an anode, a light-emitting functional layer and a cathode which are sequentially stacked from the direction close to the driving back plate to the direction far away from the driving back plate, and at least two vapor deposition film layers comprise the light-emitting functional layer and the cathode; in the same light-emitting element, the orthographic projection of the cathode on the driving back plate is at least partially positioned outside the orthographic projection of the light-emitting functional layer on the driving back plate, so that the cathodes of adjacent light-emitting elements are all overlapped to the isolation column to be connected with each other.

3. The display mother board according to claim 2, wherein the isolation column comprises a conductive structure and an insulating structure which are sequentially stacked from a direction close to the pixel definition layer to a direction far away from the pixel definition layer, the edge of the insulating structure protrudes out of the edge of the conductive structure to form an eave structure, the side surface of the conductive structure and the pixel definition layer enclose to form a concave area, and the cathode is at least partially positioned in the concave area and is lapped on the conductive structure.

4. The display mother panel according to claim 2, wherein the boundary of the orthographic projection of the cathode and the light-emitting functional layer on the driving back plate in the same sub-pixel exceeds the boundary of the orthographic projection of the anode; and along the width direction of the sub-pixel, a first distance d1 is arranged between the boundaries of the cathode and the anode, and a second distance d2 is arranged between the boundaries of the light-emitting functional layer and the anode; along the length direction of the sub-pixel, a third distance d3 is arranged between the boundaries of the cathode and the anode, and a fourth distance d4 is arranged between the boundaries of the light-emitting functional layer and the anode;

Wherein the first distance d1 is greater than or equal to the third distance d3, and the second distance d2 is greater than or equal to the fourth distance d4.

5. The display mother panel according to claim 4, wherein the spacer has a first width d0 along a width and/or length direction of the sub-pixels, wherein a difference between the second distance d2 and the fourth distance d4 is smaller than the first width d0.

6. The display motherboard of claim 1, wherein the display motherboard comprises at least two substrate regions arranged in a mixed manner, each substrate region comprising a plurality of the single-sided panel regions; the plurality of subpixels comprise subpixels of at least two different colors; the aspect ratios of the sub-pixels of the same color in different substrate areas are all within a threshold value, and the opening shapes are the same; and the subpixels in at least one of the substrate regions are configured to: when the vapor-deposited film layer is formed by horizontal vapor deposition based on a linear vapor deposition source, at least part of the subpixels have an aspect ratio of greater than or equal to 1, and the length extension direction is the moving direction of the linear vapor deposition source; or when the vapor deposition film layer is formed by a vertical vapor deposition method, at least a part of the subpixels have an aspect ratio of 0.82 to 1.22.

7. The display mother panel according to claim 6, wherein at least two of the substrate regions include a first substrate region and a second substrate region, and the single-sided board region in the first substrate region and the single-sided board region in the second substrate region are perpendicular to each other in a longitudinal direction.

8. The display motherboard of claim 6 wherein the length extension directions of the same color sub-pixels in each of said substrate areas are the same.

9. The display motherboard of claim 7, wherein said subpixel has a target aspect ratio of K1 within said first substrate region; in the second substrate region, the target aspect ratio of the sub-pixel is K2; wherein, when the vapor deposition film layer is formed based on a vertical vapor deposition method, the threshold value K is less than or equal to Kmax-1, wherein Kmax is the one of the maximum values of K1 and K2.

10. The display mother panel according to claim 9, wherein in the first substrate region, a plurality of the sub-pixels in the single panel region are arranged in m1 along a length direction of the sub-pixels and are arranged in n1 along a width direction of the sub-pixels, a length of the single panel region along the length direction of the sub-pixels is L1, a width of the single panel region along the width direction of the sub-pixels is W1, a length of a single sub-pixel is lp1=l1/m 1, a width of a single sub-pixel is mp1=w1/n 1,

In the second substrate region, a plurality of the sub-pixels in the single panel region are arranged in W2 along the length direction of the sub-pixels, and are arranged in n2 along the width direction of the sub-pixels, the length of the single panel region along the length direction of the sub-pixels is L2, the width of the single panel region along the width direction of the sub-pixels is W2, the length of a single sub-pixel lp2=l2/n 2, the width of a single sub-pixel wp2=w2/n 2,

Where k1=lp1/Mp 1, k2=lp2/Wp 2.

11. A method of manufacturing a display mother board, characterized by preparing the display mother board according to any one of claims 1 to 10; the method comprises the following steps:

Preparing a driving backboard;

Forming a plurality of light-emitting elements on the driving backboard, wherein the light-emitting elements are arranged in the corresponding sub-pixels, and the light-emitting elements comprise at least two vapor deposition film layers which are stacked in sequence from the direction close to the driving backboard to the direction far from the driving backboard; wherein,

The vapor deposition film layer is formed by adopting a linear vapor deposition source to perform horizontal vapor deposition, the length-to-width ratio of at least part of the sub-pixels is greater than or equal to 1, and the moving direction of the linear vapor deposition source is the length extending direction of the sub-pixels; or alternatively

The vapor deposition film layer is formed by adopting a vertical vapor deposition mode, and the aspect ratio of at least part of the sub-pixels is 0.82-1.22.

12. The method according to claim 11, applied to the display mother board according to claim 2, after the preparation of the driving back board, before the formation of the plurality of light emitting elements on the driving back board, the method further comprising the steps of:

Forming a pixel defining layer and a separation column on the driving backboard, wherein a plurality of pixel openings are formed in the pixel defining layer so as to define a plurality of sub-pixels, and the separation column is positioned on one side of the pixel defining layer, which is far from the driving backboard, and is arranged around the pixel openings;

the forming a plurality of light emitting elements on the driving back plate specifically includes:

Forming an anode within the pixel opening;

And sequentially depositing a plurality of vapor deposition materials on one side of the anode far away from the driving backboard to form a light-emitting functional layer and a cathode, wherein in the same light-emitting element, the orthographic projection of the cathode on the driving backboard is at least partially positioned outside the orthographic projection of the light-emitting functional layer on the driving backboard, so that the cathodes of adjacent light-emitting elements are overlapped to the isolation column to be connected with each other.

13. The method according to claim 12, wherein when the plurality of sub-pixels includes at least two color sub-pixels, sequentially depositing a plurality of vapor deposition materials on a side of the anode remote from the driving back plate to form a light emitting functional layer and a cathode, specifically comprising:

Sequentially performing the patterning steps of the luminous elements corresponding to the sub-pixels of each color to complete the patterning of the luminous elements of the sub-pixels of all colors; wherein, for any color sub-pixel, the patterning step of the light emitting element comprises:

Sequentially depositing a plurality of vapor deposition materials on the whole surface of one side of the anode, which is far away from the driving backboard, so as to form a light-emitting functional layer and a cathode of the light-emitting element in all the sub-pixels;

Carrying out whole-surface film packaging on one side of the cathode far from the driving backboard;

And removing the luminous functional layer and the cathode in the other sub-pixels except the sub-pixel of the current color by adopting a photoetching mode so as to complete the patterning step of the sub-pixel of the current color.

14. The method according to claim 11, wherein the vapor deposition angle α of the vapor deposition source is 60 to 90 ° when the vapor deposition film layer is formed by horizontal vapor deposition using a linear vapor deposition source or when the vapor deposition film layer is formed by vertical vapor deposition.

15. A display panel, characterized in that the display panel is a single display panel formed after dividing the display mother board according to any one of claims 1 to 14 based on the single panel region.