CN118249770A - Acoustic resonator and preparation method and application thereof - Google Patents
Acoustic resonator and preparation method and application thereof Download PDFInfo
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- CN118249770A CN118249770A CN202410151067.9A CN202410151067A CN118249770A CN 118249770 A CN118249770 A CN 118249770A CN 202410151067 A CN202410151067 A CN 202410151067A CN 118249770 A CN118249770 A CN 118249770A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 15
- 230000007547 defect Effects 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 12
- 238000010168 coupling process Methods 0.000 abstract description 12
- 238000005859 coupling reaction Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to an acoustic resonator, a preparation method and application thereof, and the structure of the acoustic resonator comprises: providing a support substrate (1); an intermediate layer (2) of SiO 2 located above the support substrate (1); a piezoelectric film (3) positioned above the SiO 2 intermediate layer (2); a metal electrode located above the piezoelectric film (3); the metal electrode consists of a grounding electrode (4) and a signal electrode (5) with the same thickness or different thicknesses or consists of an interdigital electrode (6) with the same thickness or different thicknesses and a reflecting grid (7). The invention can realize the requirements of the resonator on different electromechanical coupling coefficients, resonant frequencies and sound speeds by changing the thickness of the metal electrode.
Description
Technical Field
The invention belongs to the field of acoustic filters, and particularly relates to an acoustic resonator, a preparation method and application thereof.
Background
The acoustic filter is composed of acoustic resonators connected in series and in parallel, so that the performance of the acoustic filter is closely related to the design of the acoustic resonators, and the optimization design of electromechanical coupling coefficients, various clutters and the like of the resonators is needed as much as possible in order to meet the performance requirements of the filter such as bandwidth, in-band flatness and the like. The existing means for optimally designing the resonator mainly comprise high-order mode suppression, out-of-band clutter suppression and the like, and the requirements of the resonator required by the filter are met by adjusting the electrode structure, in-plane rotation angle, piezoelectric film cutting and the like of the resonator.
The prior art has the following main defects:
① The thickness of the metal electrode is a fixed value: when the electrode of the resonator is optimally designed, the increase of the electrode load is beneficial to weakening the longitudinal mode, the electrode thickness is designed in an integrated mode on a single chip mainly by setting the electrode thickness to a fixed value, and then the optimal electrode thickness is obtained by continuously simulating the optimal design, so that the repeated experiment is needed for a plurality of times.
② The resonant frequency varies with the electrode structure: when the electrode structure of the resonator is optimally designed, such as Piston is added, apodization, inclined electrodes and the like are adopted to regulate and control the resonant frequency and the electromechanical coupling coefficient, the resonant frequency and the electromechanical coupling coefficient are changed along with the change of the electrode structure.
Disclosure of Invention
The invention aims to solve the technical problem of providing an acoustic resonator, a preparation method and application thereof, wherein the acoustic resonator can meet the requirements of the resonator on different electromechanical coupling coefficients, resonant frequencies and sound speeds by changing the thickness of a metal electrode.
The invention provides an acoustic resonator, the structure of which comprises:
Providing a supporting substrate;
an intermediate layer of SiO 2 located over the support substrate;
A piezoelectric film over the SiO 2 interlayer;
A metal electrode located above the piezoelectric film;
the metal electrode consists of a grounding electrode and a signal electrode with the same thickness or different thicknesses or consists of an interdigital electrode and a reflecting grating with the same thickness or different thicknesses.
Further, the ground electrode and the signal electrode are arranged in a staggered manner.
Further, the interdigital electrode is arranged in the middle, and the reflecting grids are arranged at two ends.
Preferably, the thickness of the metal electrode ranges from 120 nm to 300nm, and the material comprises one or more of aluminum, copper, gold, titanium, nickel, molybdenum and platinum.
Preferably, the thickness of the supporting substrate ranges from 10 um to 500um, and the material is silicon, 4H-silicon carbide, 6H-silicon carbide or sapphire.
Preferably, the thickness of the piezoelectric film ranges from 300 nm to 1000nm, and the material is lithium niobate or lithium tantalate.
Preferably, the crystal cut of the piezoelectric film is a rotation Y cut, and the corresponding Euler angle is (0, -beta, 0) or an X cut, and the corresponding Euler angle is (alpha, -90, -90), wherein alpha and beta are any angles.
The invention also provides a preparation method of the acoustic resonator, which comprises the following steps:
(1) Ion implantation is carried out on the piezoelectric film (a defect layer is introduced in the process); then cleaning a supporting substrate, performing activation treatment on the surface of the supporting substrate, and then bonding the piezoelectric film, the SiO 2 intermediate layer and the supporting substrate in sequence from top to bottom to obtain a heterogeneous integrated substrate;
(2) Annealing the heterogeneous integrated substrate to ensure that the piezoelectric film is separated at the defect layer to finish stripping; then carrying out chemical mechanical polishing on the surface of the heterogeneous integrated substrate;
(3) Depositing photoresist on the piezoelectric film, patterning a developing electrode by using electron beam exposure, depositing metal, and forming a grounding electrode and a signal electrode or an interdigital electrode and a reflecting gate; and removing the photoresist to obtain the acoustic resonator.
The invention also provides application of the acoustic resonator in a filter.
Advantageous effects
(1) The invention can realize the requirements of the resonator on different electromechanical coupling coefficients, resonant frequencies and sound speeds by changing the thickness of the metal electrode.
(2) According to the invention, the grounding electrode and the signal electrode are adjusted to further realize effective adjustment of the electromechanical coupling coefficient of the resonator under the condition that the resonant frequency is not changed, so that monolithic integration of resonators with different electromechanical coupling coefficients required by filter construction can be realized.
(3) The invention can realize effective inhibition of the high-order mode on the right side of the resonance main mode by regulating and controlling the thickness of the reflecting grating, thereby leading the high-order mode to be far away from the filter passband or greatly weakening the influence of the high-order mode on the filter passband in the filter design.
Drawings
Fig. 1 is a schematic structural view of a first acoustic resonator according to the present invention.
Fig. 2 is a schematic structural diagram of a second acoustic resonator according to the present invention.
Fig. 3 is a schematic structural view of a third acoustic resonator according to the present invention.
Fig. 4 is a process for preparing a heterogeneous integrated substrate.
Fig. 5 is a process for preparing a patterned metal electrode.
Fig. 6 is an effect diagram of the first acoustic resonator of the present invention.
Fig. 7 is an effect diagram of a second acoustic resonator of the present invention.
Fig. 8 is a diagram showing the effect of a third acoustic resonator according to the present invention.
Fig. 9 is a second effect diagram of a third acoustic resonator according to the present invention.
Detailed Description
The application will be further illustrated with reference to specific examples. It is to be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. Furthermore, it should be understood that various changes and modifications can be made by one skilled in the art after reading the teachings of the present application, and such equivalents are intended to fall within the scope of the application as defined in the appended claims.
Example 1
As shown in fig. 1 and 2, the present embodiment provides an acoustic resonator having a structure including:
providing a support substrate 1;
an intermediate layer 2 of SiO 2 located above the support substrate 1;
A piezoelectric film 3 positioned above the SiO 2 intermediate layer 2;
A metal electrode located above the piezoelectric film 3;
The metal electrode is composed of a ground electrode 4 and a signal electrode 5 with the same thickness or different thicknesses. The ground electrode 4 and the signal electrode 5 are staggered.
The embodiment also provides a preparation method of the acoustic resonator, which comprises the following steps:
(1) As shown in fig. 4, the piezoelectric film 3 is subjected to ion implantation (this process introduces a defect layer); then cleaning a support substrate 1, performing activation treatment on the surface of the support substrate 1, and then bonding the piezoelectric film 3, the SiO 2 intermediate layer 2 and the support substrate 1 in sequence from top to bottom to obtain a heterogeneous integrated substrate;
(2) Annealing the heterogeneous integrated substrate to separate the piezoelectric film 3 at the defect layer to finish the stripping; then carrying out chemical mechanical polishing on the surface of the heterogeneous integrated substrate;
(3) As shown in fig. 5, a photoresist is deposited on the piezoelectric film 3, a developing electrode is patterned by electron beam exposure, a metal is deposited, and a ground electrode 4 and a signal electrode 5 are formed; and removing the photoresist to obtain the acoustic resonator.
In this embodiment, the thickness of any ground electrode 4 or signal electrode 5 is changed (the other group of electrodes is kept unchanged), so as to regulate and control the electromechanical coupling coefficient and frequency of the resonator, so as to adapt to the requirements of resonators with different electromechanical coupling coefficients required by the filter, and the effect diagram is shown in fig. 6. The metal electrode is Al, the thickness of the grounding electrode 4 is fixed to be 120nm, the regulation range of the signal electrode 5 is 120-300 nm, the piezoelectric film is 600nm of Y42 cut lithium tantalate, the thickness of the SiO 2 intermediate layer is 500nm, and the supporting substrate is 3500nm of silicon substrate. On the basis, the duty ratio of the metal electrode is regulated, namely, only the duty ratio (0.1-0.8) of the grounding electrode 4 (or the signal electrode 5), the duty ratio of the signal electrode 5 (or the grounding electrode 4) is set to be 0.5, other parameters are kept unchanged, and the design structure is shown in fig. 2. Through researches, the adjustment and control of the electromechanical coupling coefficient of the resonator can be realized under the condition that the resonant frequency is not changed by adjusting the duty ratio of the metal electrode, and the effect diagram is shown in fig. 7 and a black dotted line frame thereof. On the basis of the former, the method is very friendly to the requirement of resonators with different electromechanical coupling coefficients required by the monolithically integrated filter.
Example 2
As shown in fig. 3, the present embodiment provides an acoustic resonator having a structure including:
providing a support substrate 1;
an intermediate layer 2 of SiO 2 located above the support substrate 1;
A piezoelectric film 3 positioned above the SiO 2 intermediate layer 2;
A metal electrode located above the piezoelectric film 3;
The metal electrode consists of interdigital electrodes 6 with the same thickness or different thicknesses and a reflecting grating 7. The interdigital electrode 6 is arranged in the middle, and the reflecting grating 7 is arranged at two ends.
The embodiment also provides a preparation method of the acoustic resonator, which comprises the following steps:
(1) As shown in fig. 4, the piezoelectric film 3 is subjected to ion implantation (this process introduces a defect layer); then cleaning a support substrate 1, performing activation treatment on the surface of the support substrate 1, and then bonding the piezoelectric film 3, the SiO 2 intermediate layer 2 and the support substrate 1 in sequence from top to bottom to obtain a heterogeneous integrated substrate;
(2) Annealing the heterogeneous integrated substrate to enable the piezoelectric film 3 to split at the defect layer so as to finish stripping; then carrying out chemical mechanical polishing on the surface of the heterogeneous integrated substrate;
(3) As shown in fig. 5, a photoresist is deposited on the piezoelectric film 3, a developing electrode is patterned by electron beam exposure, a metal is deposited, and an interdigital electrode 6 and a reflective gate 7 are formed; and removing the photoresist to obtain the acoustic resonator.
In this embodiment, the interdigital electrode 6 is set to be Al, the thickness is set to be 150nm, the pair number of interdigital electrodes is set to be 60 pairs, the pair number of reflection gates is set to be 25 pairs, the thickness of the lithium tantalate piezoelectric film is 600nm, the sio 2 intermediate layer is 500nm, and the thickness of the silicon substrate is set to be 10um. In this structure, the thickness of the reflective grating is adjusted, that is, the thickness of the reflective grating is adjusted to 150-300 nm on the premise of keeping the parameters of the interdigital electrode unchanged, so that the thickness of the reflective grating is thickened downwards (the height of the top electrode is kept consistent). The structure has obvious weakening and inhibiting effects on the high-order modes on the right side of the main resonance mode, the effect diagram is shown in fig. 8, the high-order mode admittance ratio is reduced to 4.713dB and 1.747dB from 7.844dB in sequence, and the effect is obvious. If the high order mode exists and the admittance is strong, the passband of the filter is affected, that is, noise is introduced into the passband on the right side, so that in-band jitter is caused, and the performance of the filter is degraded (i.e., the in-band jitter of the filter caused by the high order hybrid mode is shown as a dashed line box in fig. 9). The embodiment can greatly weaken the influence of the high-order hybrid mode on the passband of the filter, and has obvious effect of improving the in-band jitter.
Claims (8)
1. An acoustic resonator characterized by: the structure of the acoustic resonator includes:
providing a support substrate (1);
An intermediate layer (2) of SiO 2 located above the support substrate (1);
A piezoelectric film (3) positioned above the SiO 2 intermediate layer (2);
a metal electrode located above the piezoelectric film (3);
The metal electrode consists of a grounding electrode (4) and a signal electrode (5) with the same thickness or different thicknesses or consists of an interdigital electrode (6) with the same thickness or different thicknesses and a reflecting grid (7).
2. An acoustic resonator according to claim 1, characterized in that: the grounding electrode (4) and the signal electrode (5) are arranged in a staggered mode.
3. An acoustic resonator according to claim 1, characterized in that: the interdigital electrode (6) is arranged in the middle, and the reflecting grids (7) are arranged at two ends.
4. An acoustic resonator according to claim 1, characterized in that: the thickness of the metal electrode ranges from 120 nm to 300nm, and the material comprises one or more of aluminum, copper, gold, titanium, nickel, molybdenum and platinum.
5. An acoustic resonator according to claim 1, characterized in that: the thickness of the supporting substrate (1) ranges from 10 um to 500um, and the material is silicon, 4H-silicon carbide, 6H-silicon carbide or sapphire.
6. An acoustic resonator according to claim 1, characterized in that: the thickness of the piezoelectric film (3) ranges from 300 nm to 1000nm, and the material is lithium niobate or lithium tantalate.
7. A method of manufacturing an acoustic resonator comprising the steps of:
(1) Taking a piezoelectric film (3) for ion implantation; then cleaning a supporting substrate (1), performing activation treatment on the surface of the supporting substrate (1), and then bonding the piezoelectric film (3), the SiO 2 intermediate layer (2) and the supporting substrate (1) in sequence from top to bottom to obtain a heterogeneous integrated substrate;
(2) Annealing the heterogeneous integrated substrate to ensure that the piezoelectric film is separated at the defect layer to finish stripping; ; then carrying out chemical mechanical polishing on the surface of the heterogeneous integrated substrate;
(3) Depositing photoresist on the piezoelectric film (3), patterning a developing electrode by using electron beam exposure, depositing metal, and forming a grounding electrode (4) and a signal electrode (5) or an interdigital electrode (6) and a reflecting grid (7); and removing the photoresist to obtain the acoustic resonator.
8. Use of an acoustic resonator according to claim 1 in a filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410151067.9A CN118249770A (en) | 2024-02-02 | 2024-02-02 | Acoustic resonator and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410151067.9A CN118249770A (en) | 2024-02-02 | 2024-02-02 | Acoustic resonator and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118249770A true CN118249770A (en) | 2024-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202410151067.9A Pending CN118249770A (en) | 2024-02-02 | 2024-02-02 | Acoustic resonator and preparation method and application thereof |
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| Country | Link |
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| CN (1) | CN118249770A (en) |
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2024
- 2024-02-02 CN CN202410151067.9A patent/CN118249770A/en active Pending
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