CN118249770A - An acoustic resonator and its preparation method and application - Google Patents
An acoustic resonator and its preparation method and application Download PDFInfo
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 4
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- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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Abstract
Description
技术领域Technical Field
本发明属于声学滤波器领域，特别涉及一种声学谐振器及其制备方法和应用。The invention belongs to the field of acoustic filters, and in particular relates to an acoustic resonator and a preparation method and application thereof.
背景技术Background technique
声学谐振器串、并联组成声学滤波器，因此声学滤波器的性能与声学谐振器的设计密切相关，为满足滤波器的带宽、带内平整度等性能要求，需要尽可能地对谐振器的机电耦合系数、各类杂波等进行优化设计。现有对谐振器进行优化设计的手段主要包括高阶模的抑制、带外杂波的抑制等，通过对谐振器的电极结构、面内旋转角以及压电薄膜切型等进行调整以达到滤波器所需谐振器的要求。Acoustic resonators are connected in series and in parallel to form an acoustic filter. Therefore, the performance of the acoustic filter is closely related to the design of the acoustic resonator. In order to meet the performance requirements of the filter such as bandwidth and in-band flatness, it is necessary to optimize the electromechanical coupling coefficient and various types of clutter of the resonator as much as possible. The existing means of optimizing the design of resonators mainly include the suppression of high-order modes and out-of-band clutter. The requirements of the resonator required by the filter are achieved by adjusting the electrode structure, in-plane rotation angle and piezoelectric film cutting of the resonator.
目前的技术主要有以下的缺点：The current technology has the following main disadvantages:
①金属电极的厚度为一个固定值：在对谐振器的电极进行优化设计时，增加电极负载有利于减弱纵向模式，其主要是通过将电极厚度设定为一个固定的值在单片上集成设计，再通过不断地仿真优化设计尝试获得最佳的一个电极厚度，需要重复实验的次数较多。① The thickness of the metal electrode is a fixed value: When optimizing the design of the electrode of the resonator, increasing the electrode load is beneficial to weakening the longitudinal mode. This is mainly achieved by setting the electrode thickness to a fixed value for integrated design on a single chip, and then continuously simulating and optimizing the design to try to obtain the best electrode thickness, which requires repeated experiments many times.
②谐振频率随电极结构改变：在对谐振器的电极结构进行优化设计时，如添加Piston、采用变迹、倾斜电极等对谐振频率和机电耦合系数进行调控时，谐振频率和机电耦合系数同时随电极结构改变而发生改变。② The resonant frequency changes with the electrode structure: When optimizing the electrode structure of the resonator, such as adding a piston, using a variable track, tilting electrodes, etc. to adjust the resonant frequency and the electromechanical coupling coefficient, the resonant frequency and the electromechanical coupling coefficient also change with the electrode structure.
发明内容Summary of the invention
本发明所要解决的技术问题是提供一种声学谐振器及其制备方法和应用，该声学谐振器通过改变金属电极的厚度可实现谐振器对不同机电耦合系数、谐振频率以及声速的需求。The technical problem to be solved by the present invention is to provide an acoustic resonator and a preparation method and application thereof, wherein the acoustic resonator can meet the requirements of the resonator for different electromechanical coupling coefficients, resonant frequencies and sound velocities by changing the thickness of the metal electrode.
本发明提供了一种声学谐振器，所述声学谐振器的结构包括：The present invention provides an acoustic resonator, the structure of which includes:
提供一支撑衬底；providing a supporting substrate;
位于所述支撑衬底上方的SiO2中间层；a SiO2 intermediate layer located above the support substrate;
位于所述SiO2中间层上方的压电薄膜；a piezoelectric film located above the SiO2 intermediate layer;
位于所述压电薄膜上方的金属电极；a metal electrode located above the piezoelectric film;
所述金属电极由相同厚度或不同厚度的接地电极和信号电极组成或者由相同厚度或不同厚度的叉指电极和反射栅组成。The metal electrode is composed of a ground electrode and a signal electrode of the same thickness or different thicknesses, or is composed of an interdigital electrode and a reflection grid of the same thickness or different thicknesses.
进一步的，所述接地电极和信号电极交错设置。Furthermore, the ground electrodes and the signal electrodes are arranged alternately.
进一步的，所述叉指电极设置在中部，所述反射栅设置在两端。Furthermore, the interdigital electrodes are arranged in the middle, and the reflective grids are arranged at both ends.
优选的，所述金属电极的厚度范围为120～300nm，材料包括铝、铜、金、钛、镍、钼、铂中的一种或几种。Preferably, the thickness of the metal electrode is in the range of 120 to 300 nm, and the material includes one or more of aluminum, copper, gold, titanium, nickel, molybdenum, and platinum.
优选的，所述支撑衬底的厚度范围为10～500um，材料为硅、4H-碳化硅、6H-碳化硅或蓝宝石。Preferably, the support substrate has a thickness ranging from 10 to 500 um, and is made of silicon, 4H-silicon carbide, 6H-silicon carbide or sapphire.
优选的，所述压电薄膜的厚度范围为300～1000nm，材料为铌酸锂或者钽酸锂。Preferably, the piezoelectric film has a thickness ranging from 300 to 1000 nm, and the material is lithium niobate or lithium tantalate.
优选的，所述压电薄膜的晶体切型为旋转Y切，对应的欧拉角为(0，-β，0)，也可以为X切，对应欧拉角为(α，-90,-90)，其中α、β为任意角度。Preferably, the crystal cut of the piezoelectric film is a rotated Y-cut, and the corresponding Euler angle is (0, -β, 0), or it can be an X-cut, and the corresponding Euler angle is (α, -90, -90), where α and β are arbitrary angles.
本发明还提供了一种声学谐振器的制备方法，包括如下步骤：The present invention also provides a method for preparing an acoustic resonator, comprising the following steps:
(1)取压电薄膜进行离子注入(此过程会引入缺陷层)；随后对支撑衬底进行清洗，对所述支撑衬底的表面进行激活处理，随后将所述压电薄膜、SiO2中间层与所述支撑衬底按从上到下的顺序键合，得到异质集成衬底；(1) taking a piezoelectric film and performing ion implantation (this process will introduce a defect layer); then cleaning the supporting substrate, activating the surface of the supporting substrate, and then bonding the piezoelectric film, the SiO2 intermediate layer and the supporting substrate in order from top to bottom to obtain a heterogeneous integrated substrate;
(2)对上述异质集成衬底进行退火，使得所述压电薄膜在缺陷层处分裂，完成剥离；然后对上述异质集成衬底的表面进行化学机械抛光；(2) annealing the heterogeneous integrated substrate so that the piezoelectric film is split at the defect layer to complete the peeling; and then chemically mechanically polishing the surface of the heterogeneous integrated substrate;
(3)在所述压电薄膜上沉积光刻胶，使用电子束曝光图案化显影电极，沉积金属，形成接地电极和信号电极或叉指电极和反射栅；去除光刻胶，得到声学谐振器。(3) depositing photoresist on the piezoelectric film, patterning the developing electrode using electron beam exposure, depositing metal to form a ground electrode and a signal electrode or an interdigitated electrode and a reflective grating; removing the photoresist to obtain an acoustic resonator.
本发明还提供了一种声学谐振器在滤波器中的应用。The invention also provides an application of an acoustic resonator in a filter.
有益效果Beneficial Effects
(1)本发明通过改变金属电极的厚度可实现谐振器对不同机电耦合系数、谐振频率以及声速的需求。(1) The present invention can realize the resonator's requirements for different electromechanical coupling coefficients, resonant frequencies and sound velocities by changing the thickness of the metal electrode.
(2)本发明通过调整接地电极和信号电极可进一步实现在谐振频率不发生改变的情况下对谐振器的机电耦合系数进行有效调节，进而可实现滤波器搭建所需不同机电耦合系数谐振器的单片集成。(2) The present invention can further achieve effective adjustment of the electromechanical coupling coefficient of the resonator without changing the resonant frequency by adjusting the ground electrode and the signal electrode, thereby achieving monolithic integration of resonators with different electromechanical coupling coefficients required for filter construction.
(3)本发明通过对反射栅的厚度进行调控，可实现对谐振主模右侧高阶模的有效抑制，从而在滤波器设计中，使得高阶模远离滤波器通带或大大减弱其对滤波器通带的影响。(3) The present invention can effectively suppress the high-order modes on the right side of the resonant main mode by adjusting the thickness of the reflection grating, so that in the filter design, the high-order modes are kept away from the filter passband or their influence on the filter passband is greatly reduced.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明第一种声学谐振器的结构示意图。FIG. 1 is a schematic structural diagram of a first acoustic resonator of the present invention.
图2为本发明第二种声学谐振器的结构示意图。FIG. 2 is a schematic diagram of the structure of a second acoustic resonator of the present invention.
图3为本发明第三种声学谐振器的结构示意图。FIG. 3 is a schematic structural diagram of a third acoustic resonator of the present invention.
图4为异质集成衬底的制备过程。FIG. 4 shows the preparation process of a heterogeneous integrated substrate.
图5为图案化金属电极的制备过程。FIG. 5 shows the preparation process of the patterned metal electrode.
图6为本发明第一种声学谐振器的效果图。FIG. 6 is a diagram showing the effect of the first acoustic resonator of the present invention.
图7为本发明第二种声学谐振器的效果图。FIG. 7 is a diagram showing the effect of the second acoustic resonator of the present invention.
图8为本发明第三种声学谐振器的效果图一。FIG. 8 is a first effect diagram of the third acoustic resonator of the present invention.
图9为本发明第三种声学谐振器的效果图二。FIG. 9 is a second effect diagram of the third acoustic resonator of the present invention.
具体实施方式Detailed ways
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.
实施例1Example 1
由图1和图2所示，本实施例提供了一种声学谐振器，所述声学谐振器的结构包括：As shown in FIG. 1 and FIG. 2 , this embodiment provides an acoustic resonator, and the structure of the acoustic resonator includes:
提供一支撑衬底1；Providing a supporting substrate 1;
位于所述支撑衬底1上方的SiO2中间层2；a SiO2 intermediate layer 2 located above the support substrate 1;
位于所述SiO2中间层2上方的压电薄膜3；a piezoelectric film 3 located above the SiO2 intermediate layer 2;
位于所述压电薄膜3上方的金属电极；A metal electrode located above the piezoelectric film 3;
所述金属电极由相同厚度或不同厚度的接地电极4和信号电极5组成。所述接地电极4和信号电极5交错设置。The metal electrode is composed of a ground electrode 4 and a signal electrode 5 of the same thickness or different thicknesses. The ground electrode 4 and the signal electrode 5 are arranged alternately.
本实施例还提供了一种声学谐振器的制备方法，包括如下步骤：This embodiment also provides a method for preparing an acoustic resonator, comprising the following steps:
(1)由图4所示，取压电薄膜3进行离子注入(此过程会引入缺陷层)；随后对支撑衬底1进行清洗，对所述支撑衬底1的表面进行激活处理，随后将所述压电薄膜3、SiO2中间层2与所述支撑衬底1按从上到下的顺序键合，得到异质集成衬底；(1) As shown in FIG. 4 , the piezoelectric film 3 is subjected to ion implantation (this process will introduce a defect layer); the supporting substrate 1 is then cleaned, the surface of the supporting substrate 1 is activated, and then the piezoelectric film 3, the SiO2 intermediate layer 2 and the supporting substrate 1 are bonded in order from top to bottom to obtain a heterogeneous integrated substrate;
(2)对上述异质集成衬底进行退火，使得所述压电薄膜3在缺陷层处分裂，完成剥离；然后对上述异质集成衬底的表面进行化学机械抛光；(2) annealing the above-mentioned heterogeneous integrated substrate so that the piezoelectric film 3 is split at the defect layer to complete the peeling; then chemical mechanical polishing is performed on the surface of the above-mentioned heterogeneous integrated substrate;
(3)由图5所示，在所述压电薄膜3上沉积光刻胶，使用电子束曝光图案化显影电极，沉积金属，形成接地电极4和信号电极5；去除光刻胶，得到声学谐振器。(3) As shown in FIG. 5 , a photoresist is deposited on the piezoelectric film 3 , an electron beam exposure is used to pattern the development electrode, and a metal is deposited to form a ground electrode 4 and a signal electrode 5 ; the photoresist is removed to obtain an acoustic resonator.
本实施例通过对其中任意接地电极4或信号电极5厚度进行改变(另一组电极保持不变)均可实现对谐振器机电耦合系数及频率的调控，以适应滤波器所需的不同机电耦合系数的谐振器的需求，效果图如图6所示。其中金属电极设置为Al，其中接地电极4厚度固定为120nm，信号电极5调控范围为120～300nm，压电薄膜为600nm的Y42切钽酸锂，SiO2中间层厚度为500nm，支撑衬底为3500nm的硅衬底。在此基础上，通过对金属电极的占空比进行调控，即只对接地电极4(或信号电极5)的占空比(0.1～0.8)进行调控，信号电极5(或接地电极4)占空比设置为0.5进行研究，其它参数保持不变，该设计结构如图2所示。经研究，调节金属电极占空比可在谐振频率不发生改变的情况下实现对谐振器机电耦合系数的调控，效果图如图7及其黑色虚线框所示。在前者的基础上该方法对单片集成滤波器所需不同机电耦合系数的谐振器的需求非常友好。In this embodiment, the electromechanical coupling coefficient and frequency of the resonator can be adjusted by changing the thickness of any ground electrode 4 or signal electrode 5 (the other set of electrodes remain unchanged) to meet the needs of resonators with different electromechanical coupling coefficients required by the filter, and the effect diagram is shown in Figure 6. The metal electrode is set to Al, the thickness of the ground electrode 4 is fixed to 120nm, the signal electrode 5 is regulated in the range of 120 to 300nm, the piezoelectric film is 600nm Y42-cut lithium tantalate, the thickness of the SiO2 intermediate layer is 500nm, and the supporting substrate is a 3500nm silicon substrate. On this basis, by adjusting the duty cycle of the metal electrode, that is, only the duty cycle (0.1 to 0.8) of the ground electrode 4 (or signal electrode 5) is adjusted, the duty cycle of the signal electrode 5 (or ground electrode 4) is set to 0.5 for research, and other parameters remain unchanged. The design structure is shown in Figure 2. After research, adjusting the duty cycle of the metal electrode can achieve the regulation of the electromechanical coupling coefficient of the resonator without changing the resonant frequency. The effect diagram is shown in Figure 7 and its black dotted box. Based on the former, this method is very friendly to the requirements of resonators with different electromechanical coupling coefficients required for monolithic integrated filters.
实施例2Example 2
由图3所示，本实施例提供了一种声学谐振器，所述声学谐振器的结构包括：As shown in FIG3 , this embodiment provides an acoustic resonator, the structure of which includes:
提供一支撑衬底1；Providing a supporting substrate 1;
位于所述支撑衬底1上方的SiO2中间层2；a SiO2 intermediate layer 2 located above the support substrate 1;
位于所述SiO2中间层2上方的压电薄膜3；a piezoelectric film 3 located above the SiO2 intermediate layer 2;
位于所述压电薄膜3上方的金属电极；A metal electrode located above the piezoelectric film 3;
所述金属电极由相同厚度或不同厚度的叉指电极6和反射栅7组成。所述叉指电极6设置在中部，所述反射栅7设置在两端。The metal electrode is composed of interdigital electrodes 6 of the same thickness or different thicknesses and a reflective grating 7. The interdigital electrodes 6 are arranged in the middle, and the reflective grating 7 are arranged at both ends.
本实施例还提供了一种声学谐振器的制备方法，包括如下步骤：This embodiment also provides a method for preparing an acoustic resonator, comprising the following steps:
(1)由图4所示，取压电薄膜3进行离子注入(此过程会引入缺陷层)；随后对支撑衬底1进行清洗，对所述支撑衬底1的表面进行激活处理，随后将所述压电薄膜3、SiO2中间层2与所述支撑衬底1按从上到下的顺序键合，得到异质集成衬底；(1) As shown in FIG. 4 , the piezoelectric film 3 is subjected to ion implantation (this process will introduce a defect layer); the supporting substrate 1 is then cleaned, the surface of the supporting substrate 1 is activated, and then the piezoelectric film 3, the SiO2 intermediate layer 2 and the supporting substrate 1 are bonded in order from top to bottom to obtain a heterogeneous integrated substrate;
(2)对上述异质集成衬底进行退火，使得所述压电薄膜3在所述缺陷层处分裂，完成剥离；然后对上述异质集成衬底的表面进行化学机械抛光；(2) annealing the above-mentioned heterogeneous integrated substrate so that the piezoelectric film 3 is split at the defect layer to complete the peeling; then chemical mechanical polishing is performed on the surface of the above-mentioned heterogeneous integrated substrate;
(3)由图5所示，在所述压电薄膜3上沉积光刻胶，使用电子束曝光图案化显影电极，沉积金属，形成叉指电极6和反射栅7；去除光刻胶，得到声学谐振器。(3) As shown in FIG. 5 , a photoresist is deposited on the piezoelectric film 3 , an electron beam exposure is used to pattern the developed electrode, and a metal is deposited to form interdigital electrodes 6 and a reflective grating 7 ; the photoresist is removed to obtain an acoustic resonator.
本实施例叉指电极6设置Al，厚度设置为150nm，叉指电极对数设置为60对，反射栅对数为25对，钽酸锂压电薄膜厚度为600nm，SiO2中间层为500nm，硅衬底厚度设置为10um。在该结构中对反射栅厚度进行调整，即在保持叉指电极参数不发生改变的前提下，对反射栅的厚度进行调整，调整范围为150～300nm，使反射栅厚度向下加厚(顶部电极高度保持一致)。该结构对谐振主模右侧的高阶模有明显的减弱和抑制效果，效果图如图8中标注所示，高阶模导纳比由7.844dB依次降低到4.713dB又降低到1.747dB，效果显著。如果高阶模存在且导纳比较强的话，就会对滤波器的通带形成影响，即右侧通带会引入杂波，引起带内抖动，导致滤波器性能变差(如图9虚线框所示即为高阶杂模引起的滤波器的带内抖动)。本实施例可将高阶杂模对滤波器通带所形成的影响大大减弱，对带内抖动有明显的改善效果。In this embodiment, the interdigital electrode 6 is set to Al, the thickness is set to 150nm, the number of interdigital electrode pairs is set to 60 pairs, the number of reflective grating pairs is 25 pairs, the thickness of the lithium tantalate piezoelectric film is 600nm, the SiO2 intermediate layer is 500nm, and the thickness of the silicon substrate is set to 10um. In this structure, the thickness of the reflective grating is adjusted, that is, under the premise of keeping the interdigital electrode parameters unchanged, the thickness of the reflective grating is adjusted, and the adjustment range is 150-300nm, so that the thickness of the reflective grating is thickened downward (the height of the top electrode remains the same). This structure has a significant weakening and suppression effect on the high-order mode on the right side of the resonant main mode. The effect diagram is shown in the annotation in Figure 8. The high-order mode admittance ratio is reduced from 7.844dB to 4.713dB and then to 1.747dB, and the effect is significant. If a high-order mode exists and its admittance is relatively strong, it will affect the passband of the filter, that is, the right passband will introduce clutter, causing in-band jitter, resulting in poor filter performance (as shown in the dotted box in FIG9 , which is the in-band jitter of the filter caused by the high-order clutter mode). This embodiment can greatly reduce the impact of the high-order clutter mode on the filter passband, and has a significant improvement effect on the in-band jitter.
Claims (8)
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