CN118242592A - Semiconductor quantity detection optical equipment - Google Patents
Semiconductor quantity detection optical equipment Download PDFInfo
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- CN118242592A CN118242592A CN202410647252.7A CN202410647252A CN118242592A CN 118242592 A CN118242592 A CN 118242592A CN 202410647252 A CN202410647252 A CN 202410647252A CN 118242592 A CN118242592 A CN 118242592A
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- 238000001514 detection method Methods 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 238000005286 illumination Methods 0.000 claims abstract description 80
- 238000003384 imaging method Methods 0.000 claims abstract description 19
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000007493 shaping process Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0008—Reflectors for light sources providing for indirect lighting
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
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Abstract
The application provides a semiconductor quantity detection optical device, which is characterized in that an integrating mirror is arranged in an illumination light path of the semiconductor quantity detection optical device, an obliquely incident light beam is converged, shaped and homogenized by the integrating mirror, and after the light beam converged, shaped and homogenized by the integrating mirror is incident to a sample to be detected, a light spot for obliquely imaging and illuminating a detection area in the sample to be detected is formed, the same effect of a plurality of groups of lenses is realized by using a single integrating mirror, the condition of coupling of object and image relations among the plurality of groups of lenses is avoided, and the energy loss of light rays emitted by a linear light source in the transmission process among the plurality of groups of lenses is avoided, so that the uniformity of the strip light spot is ensured, the energy utilization rate of the strip light spot is improved, and the brightness of the uniform strip light spot illuminated by the detection area in the sample to be detected is higher; and a plurality of groups of lenses with complex light paths are not required to be formed in the illumination light path, so that the complexity of the illumination light path and the requirement on adjustment are reduced.
Description
Technical Field
The application relates to the technical field of semiconductor detection illumination, in particular to semiconductor quantity detection optical equipment.
Background
Semiconductor quantity detection, comprising: semiconductor measurement and semiconductor inspection; the semiconductor measurement is mainly film thickness measurement and optical critical dimension measurement, and the semiconductor detection is mainly bright field defect detection and dark field defect detection. Semiconductor quantity inspection optics, i.e., optics for semiconductor metrology and semiconductor inspection.
In the semiconductor quantity detecting optical device, a line illumination spot shaping technique is used to shape light rays emitted from a light source. In the related line illumination spot shaping technology, a plurality of groups of lenses formed by a diffraction optical element, an aspheric lens and/or a powell lens are used for shaping light rays emitted by a line light source, so that after the shaped light rays irradiate a semiconductor wafer, uniform linear illumination spots can be formed in a region to be detected of the semiconductor wafer, and then the region to be detected of the semiconductor wafer is detected.
The coupling of object-image relationships among the multiple groups of lenses used in the line illumination spot shaping technology can cause continuous loss of energy of light rays emitted by a line light source in the transmission process among the multiple groups of lenses, so that the brightness of illumination spots formed in the detection area of the semiconductor wafer is lower.
Disclosure of Invention
In order to solve the above-described problems, an object of an embodiment of the present application is to provide a semiconductor quantity detecting optical device.
In a first aspect, an embodiment of the present application provides a semiconductor quantity detection optical apparatus, including: an illumination light path and a detection light path;
the illumination light path is arranged at one side of the detection light path, and the illumination light path comprises: an integrating mirror;
The integrator lens converges, shapes and homogenizes the obliquely incident light beam, and after the converged, shaped and homogenized light beam is incident to a sample to be detected, uniform strip-shaped light spots for obliquely imaging and illuminating a detection area in the sample to be detected are formed;
And the detection light path is used for acquiring an imaging detection light beam formed by a detection area illuminated by the uniform strip-shaped light spot in the sample to be detected.
In the solution provided in the first aspect of the present application, by arranging the integrating mirror in the illumination light path of the semiconductor quantity detection optical device, the converging, shaping and homogenizing are performed on the obliquely incident light beam by using the integrating mirror, and after the converged, shaped and homogenized light beam is incident on the sample to be detected, a uniform stripe-shaped light spot for obliquely imaging and illuminating the detection area in the sample to be detected is formed; in addition, only one integrating mirror is used as an optical element for converging, shaping and homogenizing light beams in an illumination light path, a plurality of groups of lenses with complex light paths are not required to be formed in the illumination light path, and the complexity and the adjustment requirement of the illumination light path are reduced; furthermore, the number of optical elements used in the illumination light path is reduced, so that the illumination light path of the semiconductor quantity detection optical apparatus has an advantage of low cost.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram showing a structure of a semiconductor quantity detecting optical device according to an embodiment of the present application;
Fig. 2 shows a second schematic structural diagram of the semiconductor quantity detecting optical device according to the embodiment of the present application;
FIG. 3 is a schematic diagram of an integrator mirror according to an embodiment of the present application;
Fig. 4 is a schematic diagram showing an included angle β between an incident direction and an outgoing direction of a chief ray and an included angle α between the outgoing direction of the chief ray and a sample to be measured in a light beam of an oblique incidence integrator provided by an embodiment of the present application;
FIG. 5 shows a schematic diagram III of a configuration of a semiconductor quantity sensing optical device employing a mirrored illumination light path with a transmissive collimator;
FIG. 6 shows a fourth schematic diagram of a semiconductor light quantity detection optical device employing a mirrored illumination light path with a reflective collimator according to an embodiment of the present application;
FIG. 7 shows a schematic diagram of an illumination light path employing a multi-focal strip parabolic integrator;
fig. 8 shows a schematic diagram of a multi-focal strip-type parabolic integrator lens converging two uniform strip-shaped spots onto two detection areas in the sample under test.
Icon: 1. a line light source; 2. a collimator lens; 3. an integrating mirror; 4. a sample to be tested; 5. an objective lens; 6. a sleeve lens; 7. a camera; 8. a second integrating mirror; 9. a second collimating mirror; 10. a second line light source; 11. a third line light source; 12. a third collimating mirror; 13. and a third integrating mirror.
Detailed Description
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
Semiconductor quantity detection, comprising: semiconductor measurement and semiconductor inspection; the semiconductor measurement is mainly film thickness measurement and optical critical dimension measurement, and the semiconductor detection is mainly bright field defect detection and dark field defect detection. Semiconductor quantity inspection optics, i.e., optics for semiconductor metrology and semiconductor inspection.
In the semiconductor quantity detecting optical device, a line illumination spot shaping technique is used to shape light rays emitted from a light source. In the related line illumination spot shaping technology, a plurality of groups of lenses formed by a diffraction optical element, an aspheric lens and/or a powell lens are used for shaping light rays emitted by a line light source, so that after the shaped light rays irradiate a semiconductor wafer, uniform linear illumination spots can be formed in a region to be detected of the semiconductor wafer, and then the region to be detected of the semiconductor wafer is detected.
The coupling of object-image relationships among the multiple groups of lenses used in the line illumination spot shaping technology can cause continuous loss of energy of light rays emitted by a line light source in the transmission process among the multiple groups of lenses, so that the brightness of illumination spots formed in the detection area of the semiconductor wafer is lower.
Based on the above, the following embodiments of the present application provide a semiconductor quantity detection optical device, by setting an integrating mirror in an illumination light path of the semiconductor quantity detection optical device, converging, shaping and homogenizing a beam of light incident obliquely by using the integrating mirror, and forming a uniform stripe-shaped light spot for performing oblique imaging illumination on a detection area in a sample to be detected after the converged, shaped and homogenized beam of light is incident on the sample to be detected, the same effect of multiple groups of lenses is achieved by using a single integrating mirror, the condition of object-image relation coupling among the multiple groups of lenses is avoided, and energy loss in a transmission process of light emitted by a linear light source among the multiple groups of lenses is avoided, so that the uniformity of the stripe-shaped light spot is ensured, and the energy utilization rate of the stripe-shaped light spot is improved, and the brightness of the uniform stripe-shaped light spot illuminated by the detection area in the sample to be detected is higher; in addition, only one integrating mirror is used as an optical element for converging, shaping and homogenizing light beams in the illumination light path, multiple groups of lenses with complex light paths are not needed to be formed in the illumination light path, and the complexity and the adjustment requirement of the illumination light path are reduced.
The application provides a semiconductor quantity detection optical device, belonging to dark field defect detection devices. The semiconductor quantity detection device includes: the linear light source is used for providing near ultraviolet light, deep ultraviolet light, visible light and near infrared light wavelength light or single-wavelength laser; a collimator lens for collimating light emitted from the linear light source; and the integrating mirror is used for focusing the light spots, further improving the uniformity of the light beams, shaping the light beams and realizing uniform strip-shaped illumination of a detection area in the sample to be detected.
The basic principle of the integrating mirror is that an input light beam is reflected to a sample to be detected in a segmented mode, and output light spots with the same positions and sizes are obtained on a detection area of the sample to be detected to be overlapped, so that the effects of converging, homogenizing and shaping the light beam are achieved. To ensure uniformity of the spot, the integrator mirror typically needs to be segmented into seven segments or more, and the greater the number of integrator mirror segments, the better the uniformity.
In the following examples, the term "spot" and the term "uniform stripe spot" have the same meaning.
In order that the above-recited objects, features and advantages of the present application will become more apparent, a more particular description of the application will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Examples
Referring to a schematic diagram of a semiconductor quantity detection optical device shown in fig. 1, a schematic diagram of a semiconductor quantity detection optical device shown in fig. 2, and a schematic diagram of an integrator mirror shown in fig. 3, this embodiment proposes a semiconductor quantity detection optical device including: an illumination light path and a detection light path.
The illumination light path is provided on one side of the detection light path, and includes: an integrating mirror 3; the integrator lens 3 converges, shapes and homogenizes the obliquely incident light beam, and after the converged, shaped and homogenized light beam is incident on the sample 4 to be measured, a uniform stripe-shaped light spot for obliquely imaging and illuminating the detection area in the sample 4 to be measured is formed.
And the detection light path acquires an imaging detection light beam formed on a detection area illuminated by the uniform strip-shaped light spot in the sample 4 to be detected.
The sample 4 to be tested is a semiconductor wafer requiring dark field defect detection.
The uniform strip-shaped light spot is a rectangular illumination light spot with uniform brightness.
Specifically, in the semiconductor quantity detection optical device proposed in the present embodiment, the above-described illumination optical path includes, in addition to the integrating mirror 3: a line light source 1 and a collimator lens 2; the light beam emitted by the linear light source 1 is collimated by the collimating lens 2, then obliquely enters the integrating lens 3, and is converged, shaped and homogenized by the integrating lens 3; the outgoing direction of the light beam emitted by the line light source 1 after being collimated by the collimating mirror 2 is not parallel to the main optical axis of the integrating mirror 3, so that the light beam emitted by the line light source 1 after being collimated by the collimating mirror 2 is obliquely incident to the integrating mirror 3.
Specifically, in the semiconductor quantity detection optical device proposed in the present embodiment, the above detection optical path includes: an objective lens 5, a sleeve lens 6 and a camera 7 which are sequentially arranged; the imaging detection beam formed by the detection area illuminated by the uniform stripe spot is collimated by the objective lens 5 and then converged on the detection surface of the camera 7 by the sleeve lens 6, so that the imaging detection beam formed by the detection area illuminated by the uniform stripe spot in the sample 4 to be measured is obtained.
In a possible implementation, the camera 7 may employ a TDI camera.
The sleeve lens 6 acts as an imaging lens for forming an infinity optical correction system.
Of course, besides the above components of the detection light path, the detection light path may also adopt other existing microscopic imaging light paths, which will not be described herein.
In a possible embodiment, the collimator lens 2 includes: a transmissive collimator and a reflective collimator. Wherein a semiconductor quantity detecting optical device using a transmissive collimator mirror is shown in fig. 1; a semiconductor quantity detecting optical device using a reflective collimator mirror is shown in fig. 2.
In a possible embodiment, the line light source 1 is a broadband light source or a laser light source. Such broadband light sources include, but are not limited to: halogen lamps, xenon lamps, mercury-xenon lamps and laser-excited plasma light sources.
In a possible embodiment, the integrator mirror 3 is a belt-type parabolic integrator mirror; such belt-type parabolic integrator mirrors include, but are not limited to: single focal point belt type parabolic integrator mirror and multi focal point belt type parabolic integrator mirror.
Wherein, a single focus belt type parabolic integrator mirror can form a light spot in the sample 4 to be measured.
The multi-focal belt type parabolic integrator mirror can form at least two light spots in the sample 4 to be measured.
Before the integrating mirror 3 is applied to the illumination light path of the semiconductor quantity detection optical device provided in this embodiment, a mathematical model may be established according to the size of a light spot required for actual detection, so as to calculate a parabolic distribution equation of the integrating mirror 3, thereby obtaining relevant model data of the integrating mirror 3, and the integrating mirror 3 is processed according to the obtained relevant model data of the integrating mirror 3, so that the processed integrating mirror 3 can converge, reshape and homogenize an incident light beam, and then form the light spot with the size required for actual detection on the detection area of the sample 4 to be detected. The above-mentioned process of obtaining the relevant model data of the integrator lens 3 is a prior art, and will not be described in detail here.
Case one: spot size: 2 x 0.1mm parabola: 17 sections
"(y - 1.623286e+02)^2 == 2 *（-1.480559e+02） * (x - 6.488638e+01)"
"(y - 1.623288e+02)^2 == 2 *（-1.417095e+02） * (x - 6.698003e+01)"
"(y - 1.623294e+02)^2 == 2 *（-1.357838e+02） * (x - 6.906096e+01)"
"(y - 1.623312e+02)^2 == 2 *（-1.302458e+02） * (x - 7.112722e+01)"
"(y - 1.623367e+02)^2 == 2 *（-1.250670e+02） * (x - 7.317792e+01)"
"(y - 1.623534e+02)^2 == 2 *（-1.202265e+02） * (x - 7.521488e+01)"
"(y - 1.624034e+02)^2 == 2 *（-1.157206e+02） * (x - 7.724762e+01)"
"(y - 1.625528e+02)^2 == 2 *（-1.115900e+02） * (x - 7.930872e+01)"
"(y - 1.630000e+02)^2 == 2 *（-1.080020e+02） * (x - 8.150102e+01)"
"(y - 1.669280e+02)^2 == 2 *（-1.081168e+02） * (x - 8.541557e+01)"
"(y - 1.785741e+02)^2 == 2 *（-1.160196e+02） * (x - 9.322976e+01)"
"(y - 2.147265e+02)^2 == 2 *（-1.481806e+02） * (x - 1.134567e+02)"
"(y - 3.474662e+02)^2 == 2 *（-2.757254e+02） * (x - 1.825256e+02)"
"(y - 1.132703e+03)^2 == 2 *（-1.051047e+03） * (x - 5.800419e+02)"
"(y - 1.648733e+04)^2 == 2 *（-1.636793e+04） * (x - 8.276064e+03)"
"(y - 4.482190e+06)^2 == 2 *（-4.481485e+06） * (x - 2.241420e+06)"
"(y - 3.571932e+11)^2 == 2 *（-3.571931e+11） * (x - 1.785967e+11)"
Case two: spot size: 3 x 0.5mm parabola: 11 sections
"(y - 1.361171e+02)^2 == 2 *（-1.166377e+02） * (x - 5.397690e+01)"
"(y - 1.361238e+02)^2 == 2 *（-1.092182e+02） * (x - 5.642149e+01)"
"(y - 1.361414e+02)^2 == 2 *（-1.025150e+02） * (x - 5.883794e+01)"
"(y - 1.361862e+02)^2 == 2 *（-9.646254e+01） * (x - 6.122953e+01)"
"(y - 1.362995e+02)^2 == 2 *（-9.102919e+01） * (x - 6.361353e+01)"
"(y - 1.365854e+02)^2 == 2 *（-8.625041e+01） * (x - 6.604199e+01)"
"(y - 1.373077e+02)^2 == 2 *（-8.231266e+01） * (x - 6.865633e+01)"
"(y - 1.418104e+02)^2 == 2 *（-8.251064e+01） * (x - 7.312565e+01)"
"(y - 1.530618e+02)^2 == 2 *（-8.955446e+01） * (x - 8.103189e+01)"
"(y - 1.825571e+02)^2 == 2 *（-1.145263e+02） * (x - 9.827928e+01)"
"(y - 2.727460e+02)^2 == 2 *（-1.988297e+02） * (x - 1.465218e+02)"
"(y - 6.809425e+02)^2 == 2 *（-5.964749e+02） * (x - 3.559186e+02)"
"(y - 5.348816e+03)^2 == 2 *（-5.232381e+03） * (x - 2.705605e+03)"
In a possible embodiment, referring to the schematic diagram of the angle β between the incident direction and the outgoing direction of the chief ray and the angle α between the outgoing direction of the chief ray and the sample to be measured in the light beam obliquely incident to the integrator mirror 3 shown in fig. 4, the angle β between the incident direction and the outgoing direction of the chief ray in the light beam obliquely incident to the integrator mirror 3 is in the range of 10 ° to 170 °; correspondingly, an included angle alpha between the emergent direction of the main light and the sample to be measured is in the range of 5 degrees to 75 degrees.
Further, referring to fig. 5 for a third schematic structural diagram of a semiconductor quantity detection optical device using a mirror image illumination light path with a transmissive collimator, and referring to fig. 6 for a fourth schematic structural diagram of a semiconductor quantity detection optical device using a mirror image illumination light path with a reflective collimator, in order to further improve the brightness of the light spot, the semiconductor quantity detection optical device proposed in this embodiment further includes: a mirror image illumination path of the illumination path; the mirror image illumination light path is arranged on the other side of the detection light path and is symmetrically arranged with the illumination light path.
The mirror image illumination light path is identical to the illumination light path provided in the semiconductor quantity detection optical device.
The mirror image illumination light path is identical to the illumination light path arranged in the semiconductor quantity detection optical device, so that the uniform strip-shaped light spots formed on the sample 4 to be detected by the mirror image illumination light path can be overlapped with the uniform strip-shaped light spots formed on the sample 4 to be detected by the illumination light path.
As shown in fig. 5, in the semiconductor quantity detection optical device using the mirror image illumination light path of the transmission collimator, the mirror image illumination light path is set including: a second line light source 10, a second collimator mirror 9, and a second integrator mirror 8.
The specific process of forming the uniform stripe-shaped light spots on the sample 4 to be measured by the second linear light source 10, the second collimating mirror 9 and the second integrating mirror 8 in the mirror image illumination light path is similar to the process of forming the uniform stripe-shaped light spots on the sample 4 to be measured by the linear light source 1, the collimating mirror 2 and the integrating mirror 3, and will not be repeated here.
As shown in fig. 6, in the semiconductor quantity detection optical device using the mirror image illumination light path of the reflecting collimator, the mirror image illumination light path is set including: a third line light source 11, a third collimator mirror 12, and a third integrator mirror 13.
The specific process of forming the uniform stripe-shaped light spots on the sample 4 to be measured by the third linear light source 11, the third collimating mirror 12 and the third integrating mirror 13 in the mirror image illumination light path is similar to the process of forming the uniform stripe-shaped light spots on the sample 4 to be measured by the linear light source 1, the collimating mirror 2 and the integrating mirror 3, and will not be repeated here.
As can be seen from the above description, the mirror image illumination light paths which are symmetrically arranged with respect to the above illumination light paths and are identical to the illumination light paths are provided in the semiconductor quantity detection optical device, so that the uniform stripe-shaped light spots formed by the mirror image illumination light paths on the sample 4 to be detected can be overlapped with the uniform stripe-shaped light spots formed by the illumination light paths on the sample 4 to be detected, thereby improving the brightness of the light spots illuminated on the sample to be detected.
Optionally, when the number of detection areas of the sample to be measured 4 is equal to or greater than 2, in the semiconductor quantity detection optical device set forth in this embodiment, referring to a schematic view of an illumination optical path using a multi-focal band type parabolic integrator shown in fig. 7 and a schematic view of a multi-focal band type parabolic integrator shown in fig. 8, where the integrator 3 uses a multi-focal band type parabolic integrator and the sample to be measured has a plurality of detection areas, the multi-focal band type parabolic integrator can converge obliquely incident light beams onto at least two detection areas among the plurality of detection areas in the sample to be measured 4, respectively, so as to form a uniform band-shaped light spot for obliquely imaging and illuminating each of the at least two detection areas; the detection light path can simultaneously carry out imaging detection on each detection area illuminated by the uniform strip-shaped light spot in the sample 4 to be detected.
As can be seen from the above description, the multi-focal-point belt-type parabolic integrator is adopted to form an illumination light path, and after the collimated light passes through the multi-focal-point belt-type parabolic integrator, at least two light spots respectively illuminate at least two detection areas in the sample 4 to be detected, so that the illumination uniformity can be ensured, at least two detection areas in the sample 4 to be detected can be detected at the same time, and the detection efficiency of semiconductor dark field detection is improved.
In summary, this embodiment provides a semiconductor quantity detection optical device, by setting an integrating mirror in an illumination light path of the semiconductor quantity detection optical device, converging, shaping and homogenizing a beam of light entering obliquely by using the integrating mirror, after the converged, shaped and homogenized beam of light enters a sample to be detected, forming a uniform stripe-shaped light spot for obliquely imaging and illuminating a detection area in the sample to be detected, compared with a mode that a plurality of groups of lenses formed by using a diffraction optical element, an aspheric cylinder and/or a powell prism are required to form a uniform stripe-shaped illumination light spot for illuminating the detection area in the related art, the same effect as the plurality of groups of lenses is realized by using a single integrating mirror, the object-image relation coupling between the plurality of groups of lenses is avoided, and the energy loss condition of light rays emitted by a line light source in the transmission process between the plurality of groups of lenses is avoided, so that the uniformity of the stripe-shaped light spot is ensured, the energy utilization rate of the stripe-shaped light spot is also improved, and the brightness of the uniform stripe-shaped light spot illuminated by the detection area in the sample to be detected is higher; in addition, only one integrating mirror is used as an optical element for converging, shaping and homogenizing light beams in an illumination light path, a plurality of groups of lenses with complex light paths are not required to be formed in the illumination light path, and the complexity and the adjustment requirement of the illumination light path are reduced; furthermore, the number of optical elements used in the illumination light path is reduced, so that the illumination light path of the semiconductor quantity detection optical apparatus has an advantage of low cost.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A semiconductor quantity detecting optical device, characterized by comprising: an illumination light path and a detection light path;
the illumination light path is arranged at one side of the detection light path, and the illumination light path comprises: an integrating mirror;
The integrator lens converges, shapes and homogenizes the obliquely incident light beam, and after the converged, shaped and homogenized light beam is incident to a sample to be detected, uniform strip-shaped light spots for obliquely imaging and illuminating a detection area in the sample to be detected are formed;
And the detection light path is used for acquiring an imaging detection light beam formed by a detection area illuminated by the uniform strip-shaped light spot in the sample to be detected.
2. The semiconductor quantity detection optical device according to claim 1, characterized in that the illumination light path further comprises: a line light source and a collimator lens;
After being collimated by the collimating lens, the light beam emitted by the linear light source is obliquely incident to the integrating lens and converged, shaped and homogenized by the integrating lens; the emergent direction of the light beam emitted by the line light source after being collimated by the collimating mirror is not parallel to the main optical axis of the integrating mirror, so that the light beam emitted by the line light source after being collimated by the collimating mirror is obliquely incident to the integrating mirror.
3. The semiconductor quantity detecting optical device according to claim 2, characterized in that the collimator lens includes: a transmissive collimator and a reflective collimator.
4. The semiconductor quantity detecting optical device according to claim 2, wherein the line light source is a broadband light source or a laser light source.
5. The semiconductor quantity detecting optical device according to claim 4, characterized in that the broadband light source includes: halogen lamps, xenon lamps, mercury-xenon lamps and laser-excited plasma light sources.
6. The semiconductor quantity detecting optical device according to claim 1, characterized by further comprising: a mirrored illumination path of the illumination path;
The mirror image illumination light path is arranged on the other side of the detection light path and is symmetrically arranged with the illumination light path;
And the uniform strip-shaped light spots formed by the mirror image illumination light path on the sample to be detected are overlapped with the uniform strip-shaped light spots formed by the illumination light path on the sample to be detected.
7. The semiconductor quantity detecting optical device according to any one of claims 1 to 6, wherein the integrating mirror is a belt-type parabolic integrating mirror;
The belt-type parabolic integrator mirror includes: single focal belt parabolic integrator mirrors, double focal belt parabolic integrator mirrors, and multi focal belt parabolic integrator mirrors.
8. The semiconductor quantity detecting optical device according to claim 7, wherein in a case where the integrating mirror is a multi-focal band type parabolic integrating mirror and the sample to be measured has a plurality of detection regions, the multi-focal band type parabolic integrating mirror is capable of converging obliquely incident light beams onto at least two detection regions among the plurality of detection regions in the sample to be measured, respectively, to form a uniform stripe-shaped light spot that obliquely images each of the at least two detection regions; the detection light path can simultaneously carry out imaging detection on each detection area illuminated by the uniform strip-shaped light spots in the sample to be detected.
9. The semiconductor quantity detecting optical device according to any one of claims 1 to 6, wherein an angle between an incident direction and an outgoing direction of a principal ray in a light beam obliquely incident to the integrating mirror is in a range of 10 ° to 170 °;
Correspondingly, the included angle between the emergent direction of the main light and the sample to be detected is in the range of 5 degrees to 75 degrees.
10. The semiconductor quantity detecting optical device according to claim 1, characterized in that the detection optical path includes: the objective lens, the sleeve lens and the camera are sequentially arranged;
And after being collimated by the objective lens, the imaging detection light beam formed by the detection area illuminated by the uniform strip-shaped light spot is converged on the detection surface of the camera by the sleeve lens, so that the imaging detection light beam formed by the detection area illuminated by the uniform strip-shaped light spot in the sample to be detected is obtained.
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| CN202410647252.7A CN118242592A (en) | 2024-05-23 | 2024-05-23 | Semiconductor quantity detection optical equipment |
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| CN110940860A (en) * | 2019-12-25 | 2020-03-31 | 电子科技大学 | Optical method for measuring resistivity of silicon wafer in non-contact mode |
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| CN117434735A (en) * | 2023-11-03 | 2024-01-23 | 之江实验室 | Long working distance linear light spot shaping lens and linear light spot imaging system |
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| CN105008982A (en) * | 2012-12-17 | 2015-10-28 | 科磊股份有限公司 | Spectral control system |
| CN110940860A (en) * | 2019-12-25 | 2020-03-31 | 电子科技大学 | Optical method for measuring resistivity of silicon wafer in non-contact mode |
| CN113534474A (en) * | 2021-07-19 | 2021-10-22 | 华中科技大学 | Reflective beam shaping mirror and shaping system |
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