CN118241178A - Coating on surface of riving knife, riving knife and preparation method thereof - Google Patents
Coating on surface of riving knife, riving knife and preparation method thereof Download PDFInfo
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- CN118241178A CN118241178A CN202410241348.3A CN202410241348A CN118241178A CN 118241178 A CN118241178 A CN 118241178A CN 202410241348 A CN202410241348 A CN 202410241348A CN 118241178 A CN118241178 A CN 118241178A
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- riving knife
- diamond
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- chopper
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- 239000011248 coating agent Substances 0.000 title claims abstract description 25
- 238000000576 coating method Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000003776 cleavage reaction Methods 0.000 claims 1
- 230000007017 scission Effects 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 16
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000003993 interaction Effects 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 10
- 235000015895 biscuits Nutrition 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 235000014820 Galium aparine Nutrition 0.000 description 2
- 240000005702 Galium aparine Species 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002390 rotary evaporation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- -1 hydrocarbon ions Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/607—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of mechanical vibrations, e.g. ultrasonic vibrations
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a coating on the surface of a riving knife, the riving knife and a preparation method thereof, wherein the coating is a diamond-like film with the thickness of 1-10 mu m. The diamond-like coating is developed on the surface of the existing ceramic riving knife, so that the hardness and wear resistance of the surface of the riving knife can be enhanced, and the bonding strength of a lead can be improved. In the wire bonding process, the surface of the riving knife is more wear-resistant, so that the service life is prolonged, the frequency of replacing the riving knife at the application end is reduced, the utilization rate of the machine is improved, the man-machine interaction is reduced, and the comprehensive efficiency of the equipment is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a coating on the surface of a riving knife, the riving knife and a preparation method thereof.
Background
The semiconductor package mainly adopts a wire bonding mode, and a ceramic chopper is one of core components used by a wire bonding technology. When the existing riving knife is used for wire bonding, due to the influence of ultrasonic waves and downward pressure, the riving knife is severely worn (as shown in fig. 3), the wear is aggravated along with the increase of the use times, and the quality of solder balls is directly reduced at the end of service life, so that NSOP (which means that a first welding spot is bad and comprises that the ball is not sticky, an aluminum layer is broken through, and the like) and NSOL (which means that a second welding spot is bad and the wire is broken off as shown in fig. 4) are caused, so that the life of the riving knife is finished, and a new riving knife is required to be replaced. Whenever a new riving knife is replaced, the machine needs to be readjusted and human intervention is done, affecting the MTBR (mean time between repairs) and MTTF (mean time between failures) of the machine.
Disclosure of Invention
The invention aims to solve the technical problem of prolonging the service life of the existing riving knife. According to the invention, the diamond-like coating is arranged on the surface of the existing ceramic riving knife, so that the hardness and wear resistance of the surface of the riving knife are enhanced, and the service life of the riving knife is prolonged.
The technical scheme for solving the technical problems is as follows: the coating on the surface of the chopper is a diamond-like film with the thickness of 1-10 mu m.
The principle of the invention is explained: diamond-like carbon (DLC, english: diamond like Carbon abbreviation) is an amorphous carbon, and this material exhibits many properties similar to diamond. The carbon element has 3 kinds of hybrid bonds, sp1, sp2 and sp3, and the different contents of the three bonds are combined to form molecular structures with different forms, so that the molecular structures show different properties. Diamond is formed when carbon atoms form covalent bonds in the hybridized orbitals of sp3 bonds. Graphite is formed when carbon atoms form covalent bonds in the hybridized orbitals of sp2 bonds. When hybridized with a mixture of carbon atoms sp2, sp3 bonds, diamond-like carbon is formed. Diamond-like carbon is often used in the form of films that have high hardness, high resistivity, good optical properties, etc., as well as amorphous carbon films that have their own unique tribological properties. The diamond-like coating is developed on the surface of the existing ceramic riving knife, so that the hardness and wear resistance of the surface of the riving knife can be enhanced, and the bonding strength of a lead can be improved.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the diamond-like film is formed of at least one of hydrogenated diamond-like, tetrahedral hydrogen-free diamond-like, tetrahedral hydrogen-containing diamond-like, and metal-doped diamond-like.
It should be noted that: hydrogenated diamond-like carbon, tetrahedron hydrogen-free diamond-like carbon, tetrahedron hydrogen-containing diamond-like carbon and metal doped diamond-like carbon are classified into diamond-like carbon by structure, and can be classified into hydrogen-free type and hydrogen-containing type according to hydrogen content. The family of diamond-like carbon (DLC) includes five types of a-C: H (hydrogenated diamond-like carbon film), ta-C (tetrahedral hydrogen-free amorphous carbon film), a-C (hydrogen-free diamond-like carbon film), ta-C: H (tetrahedral hydrogen-containing amorphous carbon film), me-DLC (metal doped diamond carbon film).
Further, the diamond-like film is formed by being cracked by C 2H2 gas under the action of plasma and then being deposited on the surface of the riving knife.
It should be noted that: the diamond-like film can be formed by PVD (physical vapor deposition), CVD (chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition) and other processes.
The invention provides a riving knife for achieving the second purpose, wherein the surface of the riving knife is provided with the coating on the surface of the riving knife.
The invention provides a preparation method of a riving knife for achieving the third purpose, which comprises the following steps:
and (3) cleaning and drying the surface of the riving knife, and depositing diamond-like stone on the surface of the riving knife to form a diamond-like film, thereby obtaining the riving knife with the surface coating.
Further, the cleaning includes: the washing was performed with ultrasonic waves and water for at least 30min, and then rinsed with pure water for at least 1h.
Further, the process parameters of the drying include: the drying temperature is 110-130 ℃, and the drying time is at least 3h.
Further, the depositing diamond-like stone on the surface of the riving knife to form a diamond-like film comprises:
Preheating a chopper under a vacuum condition, etching the surface of the chopper by using plasma, controlling C 2H2 gas which is cracked after the plasma is acted to deposit on the surface of the chopper after etching, and cooling to form a diamond-like film.
Description of principle: the ion etching is to bombard the surface of the part after accelerating the plasma by an electromagnetic field, so as to remove trace pollutants or oxide layers on the surface and expose clean metal surfaces. C 2H2 gas is cracked under the action of plasma to generate C-H chemical bonds, hydrocarbon ions fly to the surface of a workpiece at a high speed under the control of bias voltage and a magnetic field, and a coating is deposited.
Further, the pressure of the vacuum condition is 6-10bar; the preheating temperature is 90-110 ℃.
The beneficial effects of the invention are as follows: the diamond-like coating is developed on the surface of the existing ceramic riving knife, so that the hardness and wear resistance of the surface of the riving knife can be enhanced, and the bonding strength of a lead can be improved. In the wire bonding process, the surface of the riving knife is more wear-resistant, so that the service life is prolonged, the frequency of replacing the riving knife at the application end is reduced, the utilization rate of a machine is improved, the man-machine interaction is reduced, and the OEE (equipment comprehensive efficiency) of equipment is improved.
Drawings
FIG. 1 shows a riving knife with a diamond-like coating on the surface (the surface is black) according to an embodiment of the present invention;
FIG. 2 is a ternary phase diagram of a diamond-like film;
FIG. 3 is a graph of wear at the end of the life of the riving knife;
fig. 4 is a graph showing the effect of wire material detachment caused by wire bonding at the end of the riving knife life.
Detailed Description
The principles and features of the present invention are described below with examples given for the purpose of illustration only and are not intended to limit the scope of the invention. The specific techniques or conditions are not identified in the examples and are described in the literature in this field or are carried out in accordance with the product specifications. The reagents or apparatus used were conventional products commercially available through regular channels, with no manufacturer noted.
Examples
A riving knife with a diamond-like coating on the surface and a preparation method thereof are provided, comprising:
(1) Placing a ceramic chopper (chopper number: BN-28080-355F-P234T01, wire type: ∅ mu mPdCu, L/F type: QFN 3 x 3, L/F plating type: silver ring plating) in water, cleaning with ultrasonic wave for 40min, and rinsing with pure water for 1.2h;
(2) Placing the rinsed riving knife into a baking oven (adopting an electric heating mode) to bake for 3.2 hours at 120 ℃;
(3) And (3) conveying the chopper into a DLC film coating vacuum furnace for coating processing, vacuumizing to 8bar, preheating the chopper to 100 ℃ by using a heating resistor, performing ion etching on the surface of the chopper by using argon plasma until the clean metal surface is exposed, then depositing C 2H2 gas on the surface of the chopper under the control of a bias voltage and a magnetic field after cracking under the action of the argon plasma, and cooling to form a diamond-like film with the thickness of 2 mu m on the surface of the chopper.
Examples
A riving knife with a diamond-like coating on the surface and a preparation method thereof are provided, comprising:
(1) Placing a ceramic chopper (chopper number: BN-28080-355F-P234T01, wire type: ∅ mu mPdCu, L/F type: QFN 3 x 3, L/F plating type: silver ring plating) in water, cleaning with ultrasonic wave for 35min, and rinsing with pure water for 1.1h;
(2) Placing the rinsed riving knife into a baking oven (adopting an electric heating mode) to bake for 3.1h at 130 ℃;
(3) And (3) conveying the chopper into a DLC film coating vacuum furnace for coating processing, vacuumizing to 6bar, preheating the chopper to 90 ℃ by using a heating resistor, performing ion etching on the surface of the chopper by using argon plasma until the clean metal surface is exposed, then depositing C 2H2 gas on the surface of the chopper under the control of a bias voltage and a magnetic field after cracking under the action of the argon plasma, and cooling to form a diamond-like film with the thickness of 2 mu m on the surface of the chopper.
Examples
A riving knife with a diamond-like coating on the surface and a preparation method thereof are provided, comprising:
(1) Placing a ceramic chopper (chopper number: BN-28080-355F-P234T01, wire type: ∅ mu mPdCu, L/F type: QFN 3 x 3, L/F plating type: silver ring plating) in water, cleaning with ultrasonic wave for 45min, and rinsing with pure water for 1.3h;
(2) Placing the rinsed riving knife into a baking oven (adopting an electric heating mode) to bake for 3.3 hours at 110 ℃;
(3) And (3) conveying the chopper into a DLC film coating vacuum furnace for coating processing, vacuumizing to 10bar, preheating the chopper to 110 ℃ by using a heating resistor, performing ion etching on the surface of the chopper by using argon plasma until the clean metal surface is exposed, then depositing C 2H2 gas on the surface of the chopper under the control of a bias voltage and a magnetic field after cracking under the action of the argon plasma, forming a diamond-like film on the surface of the chopper, and cooling.
The materials for the ceramic cleavers in examples 1-3 can be found in the inventors' prior patent applications: 202310309628.9, a ruby type high-strength Cr-ZTA ceramic material. For specific preparations reference is made to the examples:
1) 90 g of high-purity alumina powder with the alumina content of more than 99.9% and the particle size D50 of 200nm, 10g of high-purity alumina powder with the zirconia content of more than 99.9% and the particle size D50 of 50nm, 320 g (about 405.1 mL) of absolute ethyl alcohol serving as a ball milling medium, 150 g of zirconia balls with the diameter of 5mm and 200 g of alumina powder and zirconia powder with the diameter of 10mm are selected, the mixture is added into a ball milling tank, and ball milling and mixing are carried out on a planetary ball mill for 24 hours.
2) After passing through a 200-mesh screen, the slurry obtained in the step 1) is sanded on a vertical sand mill for 3 hours, wherein the sand grinding balls are zirconia balls with the diameter of 0.5mm, the mass of the sand grinding balls is 100g, and the sand grinding rotating speed is 2700r/min;
3) Filtering out the slurry uniformly sanded in the step 2), and putting the slurry on a rotary evaporator for rotary evaporation to dryness, wherein the rotary speed is 50r/min, the evaporation temperature is 50 ℃, and the rotary evaporation time is 2.5h, so as to obtain dry powder;
4) Sieving the dried powder obtained in the step 3) by a 80-mesh screen, and carrying out dry press molding under 78MPa and isostatic press molding under 200MPa to obtain the ceramic biscuit.
5) And (3) placing the ceramic biscuit prepared in the step (4) into a silicon-molybdenum rod furnace, and presintering for 1 hour at the presintering temperature of 1200 ℃ to obtain a ceramic biscuit of the impregnated zirconia toughened alumina, namely the ZTA ceramic biscuit.
6) Putting the ZTA ceramic biscuit prepared in the step 5) into a plastic box, adding Cr 3+ solution with the mass 10 times of that of the ZTA ceramic biscuit for dipping, adopting Cr (Cr 3+ solution prepared by NO 3)3•9H2 O, wherein the solvent is deionized water, the concentration of the Cr 3+ solution is 0.72g/mL, putting the Cr 3+ solution into a vacuum dryer, drying at 25 ℃ and the vacuum degree of-1 Pa, vacuumizing for 6 hours, pouring out the residual Cr 3+ solution, putting the dipped biscuit on oilpaper, maintaining the original vacuum degree, vacuumizing for-1 Pa, vacuumizing for 24 hours, and taking out and putting on a setter plate;
7) And (3) putting the ZTA ceramic biscuit on the firing plate into a high-temperature muffle furnace for sintering, wherein the sintering temperature is 1580 ℃, and the heat preservation time is 1 hour, so that the ruby-type high-strength Cr-ZTA ceramic material with pink color is prepared.
The cleavers obtained in the examples were subjected to application tests, and the results are shown in Table 1.
Table 1 application test results of riving knife
Wherein, 1 k=1000, 1 kk=1000000.
As can be seen from Table 1, the invention can prolong the service life of the riving knife by arranging the diamond-like film coating on the surface of the riving knife.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (9)
1. The coating on the surface of the chopper is characterized in that the coating is a diamond-like film with the thickness of 1-10 mu m.
2. The coating of a surface of a riving knife of claim 1, wherein the diamond-like film is formed from at least one of a hydrogenated diamond-like, a tetrahedral hydrogen-free diamond-like, a tetrahedral hydrogen-containing diamond-like, or a metal-doped diamond-like.
3. The method of claim 2, wherein the diamond-like film is formed by plasma-induced cleavage of the C 2H2 gas and then deposited on the surface of the chopper.
4. A riving knife characterized in that the riving knife surface is provided with a coating of the riving knife surface according to claim 1 or 2 or 3.
5. A method of making the riving knife of claim 4 comprising the steps of:
and (3) cleaning and drying the surface of the riving knife, and depositing diamond-like stone on the surface of the riving knife to form a diamond-like film, thereby obtaining the riving knife with the surface coating.
6. The method of preparing a riving knife of claim 5, wherein the cleaning comprises: the washing was performed with ultrasonic waves and water for at least 30min, and then rinsed with pure water for at least 1h.
7. The method of claim 5, wherein the process parameters of the drying include: the drying temperature is 110-130 ℃, and the drying time is at least 3h.
8. The method of manufacturing a riving knife according to claim 5, wherein depositing diamond-like stone on the surface of the riving knife to form a diamond-like film comprises:
Preheating a chopper under a vacuum condition, etching the surface of the chopper by using plasma, controlling C 2H2 gas which is cracked after the plasma is acted to deposit on the surface of the chopper after etching, and cooling to form a diamond-like film.
9. The method of claim 8, wherein the vacuum condition has a pressure of 6-10bar; the preheating temperature is 90-110 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410241348.3A CN118241178A (en) | 2024-03-04 | 2024-03-04 | Coating on surface of riving knife, riving knife and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410241348.3A CN118241178A (en) | 2024-03-04 | 2024-03-04 | Coating on surface of riving knife, riving knife and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118241178A true CN118241178A (en) | 2024-06-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410241348.3A Pending CN118241178A (en) | 2024-03-04 | 2024-03-04 | Coating on surface of riving knife, riving knife and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118241178A (en) |
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2024
- 2024-03-04 CN CN202410241348.3A patent/CN118241178A/en active Pending
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