CN118231321A - Semiconductor device with electrostatic chuck - Google Patents
Semiconductor device with electrostatic chuck Download PDFInfo
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- CN118231321A CN118231321A CN202410651970.1A CN202410651970A CN118231321A CN 118231321 A CN118231321 A CN 118231321A CN 202410651970 A CN202410651970 A CN 202410651970A CN 118231321 A CN118231321 A CN 118231321A
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- 238000007789 sealing Methods 0.000 claims abstract description 31
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R39/00—Rotary current collectors, distributors or interrupters
- H01R39/02—Details for dynamo electric machines
- H01R39/08—Slip-rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R39/00—Rotary current collectors, distributors or interrupters
- H01R39/64—Devices for uninterrupted current collection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a semiconductor device with an electrostatic chuck, which comprises a cavity, the electrostatic chuck, a magnetic fluid component, an elastic sealing piece, a conductive component and a conductive slip ring, wherein the cavity is provided with a first opening; the elastic sealing piece is sleeved on the periphery of the supporting shaft, one end of the elastic sealing piece is connected with the bottom of the cavity, and the other end of the elastic sealing piece is connected with the magnetic fluid component; the magnetic fluid component comprises a rotor inner cavity and a stator outer cavity; the conductive component is positioned in the inner cavity of the rotor and comprises an insulating shell, a radio frequency wire and a heating wire, and one ends of the radio frequency wire and the heating wire are respectively connected with a radio frequency source wire and a heating source wire which are positioned in the supporting shaft; the conductive slip ring comprises a radio frequency cavity and a heating power cavity which are isolated from each other; the radio frequency wire connected with an external radio frequency power supply passes through the radio frequency cavity, extends to the end face of the conductive slip ring through the radio frequency channel in the middle of the conductive slip ring, and is connected with the other end of the radio frequency wire in the conductive assembly. The invention can ensure the stability and stronger anti-interference capability of the circuit through the structural optimization design, and is beneficial to improving the yield and the output rate.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing equipment, in particular to semiconductor equipment with an electrostatic chuck.
Background
Early semiconductor devices mostly used mechanical clamping to hold a substrate, but this method resulted in non-uniform substrate edges, and problems such as particle (particle) contamination caused by mechanical movement during adsorption/de-adsorption. In order to solve the disadvantages of the mechanical chuck, electrostatic chucking has been developed in such a manner that a substrate is chucked on the surface of the chuck by coulomb force by applying a certain electric potential to the electrode of the electrostatic chuck so that charges of opposite polarity are generated at a position corresponding to the substrate on the electrode of the electrostatic chuck. In addition, to improve process uniformity, such as to improve film deposition uniformity, it is also necessary to drive the substrate in rotation during film deposition, or to adjust the distance of the substrate from the shower tray at the top of the chamber by lifting the susceptor. Because of the numerous source lines such as gas lines, cooling lines, heating wires, radio frequency lines, etc. in the equipment, problems such as line winding, radio frequency interference, poor line contact, etc. frequently occur in the process of rotating and lifting the equipment, resulting in reduced equipment yield.
It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present invention and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the invention section.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a semiconductor device with an electrostatic chuck, so as to solve the problems of the existing semiconductor device based on electrostatic adsorption substrate that the line winding, the radio frequency interference, the poor line contact, and the like easily occur during the rotation and lifting processes, resulting in the decrease of the device yield.
To achieve the above and other related objects, the present invention provides a semiconductor device with an electrostatic chuck, including a cavity, an electrostatic chuck, a magnetic fluid assembly, an elastic sealing member, a conductive assembly, and a conductive slip ring; the electrostatic chuck comprises a base and a supporting shaft, wherein the base is positioned in the cavity and is used for bearing a substrate, and the supporting shaft is connected with the bottom of the base and extends from the inside of the cavity to the outside of the cavity; the elastic sealing piece is sleeved on the periphery of the supporting shaft, one end of the elastic sealing piece is connected with the bottom of the cavity, and the other end of the elastic sealing piece is connected with the magnetic fluid component; the magnetic fluid component comprises a rotor inner cavity and a stator outer cavity sleeved on the periphery of the rotor inner cavity; the conductive component is positioned in the rotor cavity of the magnetic fluid component and comprises an insulating shell, and a radio frequency wire and a heating wire which are positioned in the insulating shell and are mutually isolated, and one ends of the radio frequency wire and the heating wire are respectively connected with a radio frequency source wire and a heating source wire which are positioned in the supporting shaft; the conductive slip ring comprises a radio frequency cavity and a heating power cavity which are isolated from each other, the heating power cavity comprises an inner ring and an outer ring sleeved on the periphery of the inner ring, one of the inner ring and the outer ring is a rotatable piece, the other one is a stator piece, one of the inner ring and the outer ring is provided with a heating power brush ring, the other one is provided with a contact, and a power wire connected with an external power supply penetrates through a metal shielding cavity arranged in the radio frequency cavity and then enters the heating power cavity until the power wire extends to the end face of the conductive slip ring and is connected with the other end of a heating wire in the conductive assembly; the radio frequency wire connected with an external radio frequency power supply passes through the radio frequency cavity, extends to the end face of the conductive slip ring through the radio frequency channel in the middle of the conductive slip ring, and is connected with the other end of the radio frequency wire in the conductive assembly.
Optionally, a cooling channel is arranged in the stator outer cavity of the magnetic fluid assembly and is communicated with an external cooling source; the magnetic fluid cavity of the magnetic fluid component is arranged between the cooling channel and the inner cavity of the rotor.
Optionally, a plurality of micropores are uniformly arranged on the top surface of the rotor inner cavity of the magnetic fluid assembly at intervals in the circumferential direction, and the micropores are communicated with a purge gas source.
Optionally, the upper parts of the rotor inner cavity and the stator outer cavity of the magnetic fluid component are connected by adopting a labyrinth sealing structure.
Optionally, the conductive component comprises a radio frequency terminal connected with the radio frequency wire and a conductive terminal connected with the heating wire, wherein the radio frequency terminal and the conductive terminal protrude out of the surface of the insulating shell of the conductive component, and the conductive component is connected with the radio frequency source wire and the heating source wire of the support shaft.
Optionally, the radio frequency wire of the conductive component comprises a conductor part, an inner layer electric insulation protective sleeve, a shielding sleeve and an outer layer electric insulation protective sleeve which are sleeved in sequence from inside to outside, wherein the shielding sleeve comprises a metal shielding net and an aluminum foil ring, and the shielding sleeve is grounded.
Optionally, the elastic sealing element comprises a corrugated pipe, and the corrugated pipe is connected with the stator outer cavity of the magnetic fluid assembly.
Optionally, the semiconductor device further comprises a lifting mechanism for lifting the electrostatic chuck, the lifting mechanism comprises a servo motor, a screw rod module, a speed reducer, a linear guide rail and a sliding block positioned on the linear guide rail, the speed reducer is connected with the servo motor and the screw rod module, the screw rod module is further connected with the sliding block, and the sliding block is connected with the stator outer cavity of the magnetic fluid assembly.
Optionally, the semiconductor device further comprises a fixing frame, and the fixing frame is fixedly connected with the cavity and the lifting mechanism.
Optionally, the semiconductor device further comprises a metal protection cover arranged on the circumference of the conductive slip ring, and the metal protection cover is used for preventing radio frequency leakage.
Optionally, the semiconductor device further comprises a bellows type thermocouple wire arranged outside the conductive slip ring, and the thermocouple wire is electrically connected with a thermocouple positioned in the cavity through a wire in the support shaft.
Optionally, the heating power cavity of the conductive slip ring is composed of a rotatable inner ring and a stator outer ring sleeved on the periphery of the inner ring, a hollow radio frequency channel for a radio frequency wire to pass through is formed in the middle of the inner ring, and the radio frequency cavity is located at the lower part of the heating power cavity.
Optionally, a brush ring is arranged on the outer peripheral surface of the inner ring, a conductive frame and contacts connected with the conductive frame are arranged on the inner peripheral surface of the outer ring, and the contacts connected with different heating power supply channels are isolated through insulating columns.
Optionally, the inner surface of the radio frequency cavity is a metal material layer with reflecting capability, and the top surface of the radio frequency cavity is sealed and isolated from the external cavity by adopting an anti-interference labyrinth channel.
As described above, the semiconductor device with electrostatic test provided by the invention has the following beneficial effects: the semiconductor device with the electrostatic chuck provided by the invention introduces the conductive slip ring and the conductive assembly, designs each moving part into the movable part and the static part, and can effectively prevent the problems of winding, friction, interference and the like of each circuit under various rotary movement modes. Meanwhile, through structural optimization design, the radio frequency and the heating channel are isolated by independent regional paths, so that the stability and the stronger anti-interference capability of the circuit can be ensured, and the production yield and the output rate of equipment can be improved.
Drawings
Fig. 1 and 2 show exemplary side views of a semiconductor device with an electrostatic chuck according to the present invention from different directions.
Fig. 3 shows an exemplary top view of a semiconductor device provided by the present invention.
Fig. 4 shows an exemplary cross-sectional structure diagram from the DD line direction of fig. 3.
Fig. 5 shows an exemplary cross-sectional structure diagram of fig. 3 from the vertical DD line direction.
Fig. 6 shows an illustrative front view of a magnetic fluid assembly for a semiconductor device provided by the present invention.
Fig. 7 shows an illustrative side view of a magnetic fluid assembly for a semiconductor device provided by the present invention.
Fig. 8 is a schematic cross-sectional view of fig. 7 from the direction of line GG.
Fig. 9 is a schematic view showing an exemplary structure of a conductive member in a semiconductor device according to the present invention.
Fig. 10 is a schematic view showing an exemplary cross-sectional structure of a radio frequency wire of the semiconductor device according to the present invention.
Fig. 11 shows an exemplary cross-sectional structure schematic diagram of a conductive slip ring of a semiconductor device provided by the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
In the context of the present invention, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.
As shown in fig. 1 to 11, the present invention provides a semiconductor device with an electrostatic chuck, which includes a cavity 11, an electrostatic chuck 12, a magnetic fluid assembly 13, an elastic sealing member 14, a conductive assembly 15, and a conductive slip ring 16.
The electrostatic chuck 12 includes a base 121 and a support shaft 122, where the base 121 is located inside the chamber 11 and is used for carrying a substrate, such as a wafer. The base 121 may be formed by plating a ceramic layer such as ALF on a surface of a conductive metal material such as an aluminum alloy. The support shaft 122 is connected to the bottom of the base 121 and extends from the inside of the chamber 11 to the outside of the chamber 11. The elastic sealing member 14 is sleeved on the periphery of the support shaft 122, one end of the elastic sealing member is connected with the bottom of the cavity 11, and the other end of the elastic sealing member is connected with the magnetic fluid assembly 13. The magnetic fluid component 13 comprises a rotor inner cavity 131 and a stator outer cavity 132 sleeved on the periphery of the rotor inner cavity 131, namely the inner cavity of the magnetic fluid component 13 rotates while the outer cavity does not rotate. The conductive component 15 is located in the rotor cavity 131 of the magnetic fluid component 13, and the conductive component 15 includes an insulating housing, and a radio frequency wire and a heating wire that are located in the insulating housing and are isolated from each other, so as to avoid mutual interference of the radio frequency wire and the heating wire. One ends of the rf wire and the heating wire are connected to an rf source wire and a heating source wire, respectively, located in the support shaft 122. The conductive slip ring 16 includes a radio frequency cavity 161 and a heating power cavity 162 that are isolated from each other. The heating power cavity 162 comprises an inner ring 1621 and an outer ring 1622 sleeved on the periphery of the inner ring 1621, wherein one of the inner ring 1621 and the outer ring 1622 is a rotatable part, the other is a stator part, and one is provided with a heating power brush ring, and the other is provided with a contact. One of the heating power brush ring or the contact contacts is in contact with the other during rotation to effect electrical conduction. A power cord connected to an external power supply passes through a metal shielding cavity 163 provided in the radio frequency cavity 161 and then enters the heating power cavity 162 until a heating passage 165 is formed on the end surface extending to the conductive slip ring 16, and is connected to the other end of the heating wire in the conductive member 15. That is, one end of the power line in the conductive member 15 is connected to the heating source line in the support shaft 122, and the other end is connected to the power line in the conductive slip ring 16. A radio frequency wire connected to an external radio frequency power supply passes through the radio frequency cavity 161, extends to the end face of the conductive slip ring 16 through the radio frequency channel 164 in the middle of the conductive slip ring 16, and is connected to the other end of the radio frequency wire in the conductive assembly 15. That is, one end of the rf wire of the conductive assembly 15 is connected to the rf source wire in the support shaft 122, and the other end is connected to the rf wire in the conductive slip ring 16. The bottom end surface of the conductive slip ring 16 is provided with a connector 24 to connect various types of source wires to external structures, such as a radio frequency bulkhead plug 168 and a heating power bulkhead plug 169, which are described later.
The semiconductor device with the electrostatic chuck provided by the invention introduces the conductive slip ring and the conductive assembly, designs each moving part into the movable part and the static part, and can effectively prevent the problems of winding, friction, interference and the like of each circuit under various rotary movement modes. Meanwhile, through structural optimization design, the radio frequency and the heating channel are isolated by independent regional paths, so that the stability and the stronger anti-interference capability of the circuit can be ensured, and the production yield and the output rate of equipment can be improved.
The cavity 11 provides a space for performing a process. The cavity 11 is generally cylindrical, and is usually made of alloy materials such as stainless steel, and the inner surface can be coated with corrosion-resistant coatings of different materials according to different process requirements. In some examples, the sidewall surfaces of the chamber 11 may be provided with a baffle or the like to prevent contamination of the chamber 11. The cavity 11 may be provided with an air inlet and an air outlet, and the air inlet and the air outlet may be the same opening. Depending on the type of chamber 11, the top of the chamber 11 may be provided with components such as a shower tray or targets. In the present embodiment, the specific type of the chamber 11 is not limited, and the process of fixing the wafer by electrostatic adsorption and lifting and rotating the wafer is applicable to the semiconductor device provided by the present invention. The semiconductor device provided in this embodiment may be, for example, a CVD device, a PVD device, a Dry Etch device, or the like. The apparatus may have a single or multiple chambers 11, and a single electrostatic chuck 12 may be disposed within the same chamber 11 or more than two electrostatic chucks 12 may be disposed at intervals. The device principle will be mainly described in this embodiment taking the monopolar single-zone electrostatic chuck 12 as an example, but the present invention is equally applicable to devices of the type such as a two-zone monopolar electrostatic chuck 12, a single-zone bipolar electrostatic chuck 12, etc.
The susceptor 121 is generally circular in shape to match the topography of the substrate. The susceptor 121 has a surface uniformly spaced apart with a plurality of electrostatic chucking holes to fix the substrate based on an electrostatic chucking principle. Heating and/or cooling lines may also be provided within the susceptor 121 for heating and/or cooling the substrate. The support shaft 122 and the base 121 may be integrally formed or detachably connected. External water, electricity, and air sources are connected/communicated with various structures within the base 121 through source lines received in the support shaft 122. And the rotation and/or elevation of the substrate is driven by the rotation and/or elevation of the support shaft 122.
The elastic sealing member 14 may be a metal bellows or other high elastic components, and two ends of the elastic sealing member are respectively connected with the cavity 11 and the stator outer cavity 132 of the magnetic fluid assembly 13 by fasteners such as screws. When the support shaft 122 is lifted and lowered by the power provided by the external motor, the elastic sealing member 14 is simultaneously deformed correspondingly, so as to ensure the sealing in the cavity 11.
The semiconductor device of the present embodiment can be applied to various lifting modes, for example, lifting of the support shaft 122 can be achieved by lifting of a member including a cylinder or the like at the bottom of the device, thereby achieving lifting of the electrostatic chuck 12. However, in the preferred example provided by the present invention, as shown in fig. 4 and 5, the lifting mechanism 17 of the semiconductor device for lifting the electrostatic chuck 12 includes a servo motor 171, a screw module 172, a speed reducer 173, a linear guide 174, and a slider 175 located on the linear guide 174. The speed reducer 173 is connected with the servo motor 171 and the screw rod module 172, the screw rod module 172 is also connected with the slider 175, and the slider 175 is connected with the stator outer cavity 132 of the magnetic fluid assembly 13. More specifically, the screw module 172 is, for example, a ball screw module 172, and the screw module 172 is connected to the slider 175 by a nut connection 177, and the slider 175 is also connected to the support 138 of the magnetic fluid assembly 13. The slider 175 is disposed on the linear guide 174 and is slidable up and down on the linear guide 174. In order to improve lifting stability, two linear guide rails 174 are arranged in parallel at intervals in the embodiment, and a slider 175 arranged on the corresponding linear guide rail 174 is connected with the annular support 138 of the magnetic fluid assembly 13. The servo motor 171 drives the speed reducer 173 to move, the speed reducer 173 drives the screw rod module 172, the screw rod of the screw rod module 172 is matched with the balls, the rotary motion of the screw rod is converted into the up-and-down motion of the balls, the sliding block 175 is driven to move up and down on the linear guide rail 174, the magnetic fluid assembly 13 connected with the sliding block 175 is further driven to move up and down, and the support shaft 122 is driven by the magnetic fluid assembly 13 to drive the electrostatic chuck 12 to lift. In order to further improve the stability of the lifting motion of the electrostatic chuck 12, the semiconductor device further comprises a fixing frame 176, and the fixing frame 176 is fixedly connected with the cavity 11 and the lifting mechanism 17. In addition, a guide post (not shown) connected to the fixing frame 176 and parallel to the linear guide 174 may be provided to improve the stability of the movement of the linear guide 174.
In the magnetic fluid assembly 13 provided in this embodiment, the stator outer cavity 132 is sleeved on the circumference of the rotor inner cavity 131, and the rotor inner cavity 131 is connected with the support shaft 122, for example, through the long screw-shaped fixed shaft 21 and the support shaft 122. The rotor cavity 131 is also connected to the hollow motor 23 by a metal connection. The hollow motor 23 provides rotational movement to rotate the rotor cavity 131 and thus the support shaft 122, thereby effecting rotation of the electrostatic chuck 12. In this embodiment, the hollow motor can rotate continuously in one direction and can reciprocate in multiple angles with high precision. To improve the accuracy of the movement, the semiconductor device may be provided with a number of sensors 20, for example a rotational positioning sensor may be provided adjacent to the rotor cavity 131 and/or an up-down movement positioning sensor may be provided near the position where the support shaft 122 is connected to the magnetic fluid assembly 13 for monitoring the rotational and lifting movements of the device, respectively.
The stator outer cavity 132 and the rotor inner cavity 131 of the magnetic fluid assembly 13 in this embodiment are respectively independent structures, and are in sealing connection through structures such as threaded fit and a sealing ring. In a preferred example, as shown in fig. 6 to 8, a cooling channel 133 is provided in the stator outer cavity 132 of the magnetic fluid assembly 13, and communicates with an external cooling source, for example, a cooling water source. The magnetic fluid cavity 134 of the magnetic fluid assembly 13 is disposed between the cooling channel 133 and the rotor cavity 131, and the magnetic fluid cavity 134 contains a liquid in which magnetic particles are dispersed. In a further example, a plurality of micro holes 1311 are uniformly spaced circumferentially on the top surface of the rotor cavity 131 of the magnetic fluid assembly 13, and the micro holes 1311 are in communication with a purge gas source. In order to ensure the tightness of the magnetic fluid assembly 13, the upper parts of the rotor inner cavity 131 and the stator outer cavity 132 of the magnetic fluid assembly 13 are connected by adopting a labyrinth seal structure 1312. Specifically, a sealing ring 1313 is disposed on the upper portion of the magnetic liquid cavity 134, the sealing ring 1313 is located between the stator outer cavity 132 and the rotor inner cavity 131, and a matched stepped thread is disposed at the connection portion of the rotor inner cavity 131 and the stator outer cavity 132 on the upper portion of the sealing ring 1313, and the two threads are matched to form a labyrinth sealing structure. A support 138 is provided at the lower part of the magnetic fluid assembly 13, the support 138 having an outwardly extending peripheral surface to connect the magnetic fluid assembly 13 to the lifting mechanism 17 of the apparatus or the like. In addition, the magnetic fluid assembly 13 is further provided with a water and gas supply module 135, a water supply port 136 communicating with the cooling channel 133, and a gas supply port 137 communicating with the micro-holes 1311 (refer to fig. 1). Inert gas is introduced into the magnetic fluid assembly 13 through the gas supply port 137, and then particles generated by the moving assembly due to moving abrasion and the like are blown away through micro holes 1311 uniformly distributed on the end surface of the magnetic fluid assembly 13. The water supply port 136 is filled with cooling circulating water to remove heat energy generated in the rotation of the magnetic fluid assembly 13, and cool the sealing ring near the supporting shaft 122, thereby prolonging the service life and ensuring the reliability of vacuum sealing. Through the magnetic fluid component 13, the vacuum rate in the cavity 11 can be ensured, the external atmosphere is isolated, meanwhile, the stability of rotary motion can be ensured, and the motion failure under the high-temperature high-vacuum corrosion condition is avoided.
An exemplary structure of the conductive member 15 may be as shown with reference to fig. 9. In addition to the radio frequency wire and the heating wire, the conductive component 15 includes a radio frequency terminal 154 connected with the radio frequency wire and a conductive terminal 155 connected with the heating wire, where the radio frequency terminal 154 and the conductive terminal 155 protrude from the surface of the insulating housing of the conductive component 15, and connect the conductive component 15 with the radio frequency source wire and the heating source wire of the support shaft 122. By providing radio frequency terminals and conductive terminals protruding from the surface of the conductive element 15, a better connection with the wires in the support shaft 122 is obtained, e.g. corresponding terminals may be embedded in the support shaft 122 for a corresponding connection. In fig. 9, there are 2 heating wires, 2 corresponding conductive terminals 155, one radio frequency wire, and one corresponding radio frequency terminal 154. Each heating wire is covered by a corresponding first insulating housing 151, and the two first insulating housings 151 each covered with a heating wire are covered by a second insulating housing 152 and then are covered in a third insulating housing 153 together with the radio frequency wire. Through such multiple cladding, the isolation of different heating wires, and the isolation of heating wires from radio frequency wires is realized. The materials of the shells are all high-insulation, heat-insulation and flame-retardant materials, and the materials of different insulating shells can be the same or different, for example, one or more than two materials selected from PEEK, PPS, PEI and the like.
In a preferred example, as shown in fig. 10, the radio frequency wire 152 of the conductive component 15 includes, from inside to outside, a conductor portion 1521, an inner electrically insulating protective sleeve 1522, a shielding sleeve 1523, and an outer electrically insulating protective sleeve 1524, where the shielding sleeve 1523 includes a metal shielding mesh and an aluminum foil ring, and the shielding sleeve is grounded. The conductor portion 1521 is a common conductive wire such as aluminum or copper, the metal shielding mesh is a copper mesh, and the insulating protective covers may be made of an insulating material with good flexibility such as polyethylene or polyimide. The rf terminal 154 is electrically connected to the conductor portion 1521 of the rf line and extends outward. Through the multiple structural design, the mechanical strength and the electrical performance of the radio frequency line can be effectively improved, and the radio frequency leakage and attenuation on a transmission path are reduced. In some examples, to further prevent radio frequency leakage, the semiconductor device further includes a metal protection cover 18 disposed around the conductive slip ring 16, where the metal protection cover 18 is made of copper, aluminum, or a copper alloy, for example.
In some examples, a thermocouple is provided in the chamber 11 to monitor the temperature in the chamber 11, for which purpose a thermocouple wire 19 is provided in connection with the thermocouple. In this embodiment, a bellows type thermocouple wire 19 is used, the thermocouple wire 19 is electrically connected to a thermocouple located in the cavity 11 via a wire passing through the support shaft 122, and such a bellows type thermocouple wire helps to prevent the wire from being wound. And in this embodiment the thermocouple wires are disposed outside of the conductive slip ring 16. This facilitates the simplification of the structure of the conductive slip ring 16, while facilitating the replacement of the thermocouple wires. Of course, in other examples, thermocouple circuitry may also be incorporated into conductive slip ring 16, without limitation.
A preferred structure of the conductive slip ring 16 according to the present embodiment is shown in fig. 11. As shown in fig. 11, the heating power chamber 162 of the conductive slip ring 16 is composed of a rotatable inner ring 1621 and a stator outer ring 1622 sleeved on the outer periphery of the inner ring 1621. A cavity is formed between inner race 1621 and outer race 1622 to accommodate conductive components. A hollow rf channel 164 is formed in the middle of the inner ring 1621 for the rf wire to pass through, and the rf chamber 161 is located at the lower part of the heating power chamber 162. The rf cavity 161 is disposed at the lower portion of the heating power cavity 162, so that a connection path from the rf cavity 161 to an external rf power source can be shortened, and therefore, the rf cavity is only required to be sealed and isolated from the heating power cavity, which is helpful for simplifying a device structure and improving rf transmission efficiency.
Specifically, the upper portion of the conductive slip ring 16 is provided with a rotor portion 167, which may be a cylindrical structure, and the middle portion of the bottom surface is provided with an opening for the passage of a line, and the opening corresponds to the radio frequency channel 164. The bottom surface of the rotor portion 167 is connected to the rotating inner ring 1621 of the heating power chamber 162, and the rotor portion 167 is connected to the rotor chamber 131 of the magnetic fluid module 13 by a fastener such as a screw. The stator outer ring 1622 and the rotor inner ring 1621 of the heating power chamber 162 are connected by a connecting member such as a bearing, which has a space from the rotor portion 167. The stator outer race 1622 has a larger circumferential surface than the rotor portion 167 of the conductive slip ring 16 to connect the conductive slip ring 16 with other structures, such as with the aforementioned metal boot 18, and/or with the cavity 11, via the stator outer race 1622 to provide better support for the conductive slip ring 16.
In a further example, a brush ring 1623 is provided on the outer circumferential surface of the inner ring 1621, and a conductive frame 1625 and a contact 1624 connected to the conductive frame 1625 are provided on the inner circumferential surface of the outer ring 1622, and the contact 1624 is, for example, in the shape of a ball. The heating wires are electrically connected to contacts 1624 and extend to an end face of conductive slip ring 16. The brush ring is, for example, one of an alloy brush, a fiber brush and a mercury conductive ring, and preferably, in this embodiment, a fiber brush is connected to a brush holder 1627 fixed to the outer circumferential surface of the inner ring 1621. Driven by the rotor inner ring 1621, the brush frame 1627 drives the fiber brush 1623 to rotate, and contacts with the contacts in the rotating process to realize sliding electrical connection. In a further example, contacts connecting different heating power channels are separated by an insulating post 1626, the insulating post 1626 being disposed, for example, on an outer peripheral surface of the rotor inner race 1621 and extending horizontally outward. Each heating power path is also grounded via a ground wire, and thus a ground point 166 is provided on the end face of the conductive slip ring 16. The ground points 166 of the different heating channels are connected to the different contacts and are isolated from each other by insulating posts 1626, avoiding shorting. In other examples, the placement of the brush ring and contacts may be interchanged, or the inner ring 1621 may be stationary and the outer ring 1622 may be rotatable. But for better matching with other structures, it is preferable that the inner race 1621 be rotatable while the outer race 1622 be stationary. The conductive slip ring 16 is made of aluminum alloy, so that the whole body is light.
In this embodiment, since the rf cavity 161 is located at the lower portion of the heating power cavity 162, the bottom end surface of the rf cavity 161 is provided with an rf through plug 168 and a heating power through plug 169. The power cord electrically connected to the heating power board plug 169 passes through the metal shielding cavity 163 located in the radio frequency cavity 161, then enters the heating power cavity 162, and is electrically connected to the contacts located in the heating power cavity 162. The metallic shielding cavities 163 may be made of a material having good shielding and reflection properties, such as silver, copper, or alloys thereof.
The inner surface of the rf cavity 161 is a layer of metal material with reflective capability to form a faraday cage structure that helps to prevent rf leakage. The top surface of the rf cavity 161 is sealed from the external cavity by an anti-interference labyrinth channel 1614. For example, in some examples, the sidewall of the rf chamber 161 is a downward extension of the outer collar 1622 of the heating power chamber 162, and the two chambers are isolated from each other by a metallic spacer. The spacer includes a first flange 1611 (rotor portion) circumferentially surrounding an inner ring 1621 of the heating power chamber 162, and a second flange 1612 (stator portion) fitted to the first flange 1611 and connected to an outer ring 1622 of the heating power chamber 162 via a metal plate 1613. The sheet metal 1613 extends all the way to the outside of the heating power cavity 162 to facilitate connection and securement of the conductive slip ring 16 to other structures. The mating surfaces of the first flange 1611 and the second flange 1612 have mutually matched concave-convex structures, so that an anti-interference labyrinth passage 1614 is formed on the mating surfaces of the two. The rotor part and the stator part of the anti-interference labyrinth passage are made of aluminum alloy materials. The anti-interference labyrinth channel 1614 is provided to prevent gaps, etc. between the rotor and the stator during the movement of the conductive slip ring 16, and the radio frequency is a variable wave, so that the risk of leakage along the gaps of the gaps exists, which can have adverse effects on other circuits and human bodies. After the labyrinth anti-interference channel is adopted, the labyrinth channel between the rotor and the stator can reflect for many times when the radio frequency passes through the labyrinth channel, and almost no energy or transmission power exists when the radio frequency wave reaches the outlet. The inner ring 1621 of the heating power cavity 162 may extend downward into the rf cavity, the bottom end portion of which is closed by a metal material, an opening through which the rf wire passes and is connected to the rf channel 164 is provided on the outer peripheral surface of the sidewall of the portion extending to the rf cavity 161, and a plurality of rf brush contacts 1615 are fixedly connected, the rf wire connected to the external rf board plug 168 is connected to the rf brush contacts 1615, and the rf wire is wound to one end of the outer peripheral surface until entering the rf channel 164 in the middle of the conductive slip ring 16.
Through the design of the structure, the conductive slip ring can effectively isolate the radio frequency channel from the heating power channel, prevent mutual interference, effectively reduce leakage of radio frequency signals on a transmission path, and contribute to improvement of equipment performance.
In summary, the semiconductor device with the electrostatic chuck provided by the invention introduces the conductive slip ring and the conductive assembly, and designs each moving part into a movable part and a static part, so that the problems of winding, friction, interference and the like of each circuit under various rotary motion modes can be effectively prevented. Meanwhile, through structural optimization design, the radio frequency and the heating channel are isolated by independent regional paths, so that the stability and the stronger anti-interference capability of the circuit can be ensured, and the production yield and the output rate of equipment can be improved.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (14)
1. The semiconductor device with the electrostatic chuck is characterized by comprising a cavity, the electrostatic chuck, a magnetic fluid component, an elastic sealing piece, a conductive component and a conductive slip ring; the electrostatic chuck comprises a base and a supporting shaft, wherein the base is positioned in the cavity and is used for bearing a substrate, and the supporting shaft is connected with the bottom of the base and extends from the inside of the cavity to the outside of the cavity; the elastic sealing piece is sleeved on the periphery of the supporting shaft, one end of the elastic sealing piece is connected with the bottom of the cavity, and the other end of the elastic sealing piece is connected with the magnetic fluid component; the magnetic fluid component comprises a rotor inner cavity and a stator outer cavity sleeved on the periphery of the rotor inner cavity; the conductive component is positioned in the rotor cavity of the magnetic fluid component and comprises an insulating shell, and a radio frequency wire and a heating wire which are positioned in the insulating shell and are mutually isolated, and one ends of the radio frequency wire and the heating wire are respectively connected with a radio frequency source wire and a heating source wire which are positioned in the supporting shaft; the conductive slip ring comprises a radio frequency cavity and a heating power cavity which are isolated from each other, the heating power cavity comprises an inner ring and an outer ring sleeved on the periphery of the inner ring, one of the inner ring and the outer ring is a rotatable piece, the other one is a stator piece, one of the inner ring and the outer ring is provided with a heating power brush ring, the other one is provided with a contact, and a power wire connected with an external power supply penetrates through a metal shielding cavity arranged in the radio frequency cavity and then enters the heating power cavity until the power wire extends to the end face of the conductive slip ring and is connected with the other end of a heating wire in the conductive assembly; the radio frequency wire connected with an external radio frequency power supply passes through the radio frequency cavity, extends to the end face of the conductive slip ring through the radio frequency channel in the middle of the conductive slip ring, and is connected with the other end of the radio frequency wire in the conductive assembly.
2. The semiconductor device according to claim 1, wherein a cooling channel is provided in the stator outer cavity of the magnetic fluid assembly, communicating with an external cooling source; the magnetic fluid cavity of the magnetic fluid component is arranged between the cooling channel and the inner cavity of the rotor.
3. The semiconductor device according to claim 1, wherein: the top surface circumference of the rotor inner chamber of magnetic fluid subassembly evenly is provided with a plurality of micropores at the interval, micropore and purge gas source intercommunication.
4. The semiconductor device according to claim 1, wherein: the upper parts of the rotor inner cavity and the stator outer cavity of the magnetic fluid component are connected by adopting a labyrinth sealing structure.
5. The semiconductor device according to claim 1, wherein the conductive member includes a radio frequency terminal connected to the radio frequency wire and a conductive terminal connected to the heating wire, the radio frequency terminal and the conductive terminal protruding from an insulating housing surface of the conductive member and connecting the conductive member to the radio frequency source wire and the heating source wire of the support shaft.
6. The semiconductor device of claim 1, wherein the radio frequency wire of the conductive assembly comprises, from inside to outside, a conductor portion, an inner electrically insulating protective sleeve, a shielding sleeve, and an outer electrically insulating protective sleeve that are sleeved in sequence, the shielding sleeve comprising a metallic shielding mesh and an aluminum foil ring, and the shielding sleeve being grounded.
7. The semiconductor device of claim 1, wherein the elastomeric seal comprises a bellows connected to the stator outer cavity of the magnetic fluid assembly.
8. The semiconductor device of claim 1, further comprising a lifting mechanism for lifting the electrostatic chuck, the lifting mechanism comprising a servo motor, a screw module, a speed reducer, a linear guide rail, and a slider positioned on the linear guide rail, the speed reducer being connected to the servo motor and the screw module, the screw module being further connected to the slider, the slider being connected to the stator outer cavity of the magnetic fluid assembly.
9. The semiconductor device of claim 8, further comprising a mount fixedly coupled to the cavity and the lifting mechanism.
10. The semiconductor device according to claim 1, further comprising a metal shield disposed circumferentially of the conductive slip ring for preventing radio frequency leakage.
11. The semiconductor device of claim 1, further comprising a bellows-type thermocouple wire disposed outside the conductive slip ring, the thermocouple wire being electrically connected to a thermocouple located within the cavity via a wire within the support shaft.
12. The semiconductor device according to any one of claims 1 to 11, wherein the heating power supply chamber of the conductive slip ring is composed of a rotatable inner ring and a stator outer ring sleeved on the periphery of the inner ring, a hollow radio frequency channel for passing a radio frequency wire is formed in the middle of the inner ring, and the radio frequency chamber is located at the lower part of the heating power supply chamber.
13. The semiconductor device according to claim 12, wherein a brush ring is provided on an outer peripheral surface of the inner ring, and a conductive frame and contacts connected to the conductive frame are provided on an inner peripheral surface of the outer ring, the contacts connected to different heating power supply channels being isolated by an insulating column.
14. The semiconductor device of claim 12, wherein the inner surface of the rf cavity is a layer of reflective metal material and the top surface of the rf cavity is hermetically isolated from the external cavity by an anti-interference labyrinth channel.
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| CN202410651970.1A CN118231321B (en) | 2024-05-24 | 2024-05-24 | Semiconductor device with electrostatic chuck |
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| CN202410651970.1A CN118231321B (en) | 2024-05-24 | 2024-05-24 | Semiconductor device with electrostatic chuck |
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| CN118231321B CN118231321B (en) | 2024-08-06 |
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