CN118222993A - High-entropy alloy coating preparation device - Google Patents
High-entropy alloy coating preparation device Download PDFInfo
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- CN118222993A CN118222993A CN202410641834.4A CN202410641834A CN118222993A CN 118222993 A CN118222993 A CN 118222993A CN 202410641834 A CN202410641834 A CN 202410641834A CN 118222993 A CN118222993 A CN 118222993A
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 39
- 239000000956 alloy Substances 0.000 title claims abstract description 39
- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 95
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 238000012423 maintenance Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 238000009684 ion beam mixing Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a high-entropy alloy coating preparation device, which comprises a vacuum chamber, a magnetron sputtering source connected with the vacuum chamber, a molecular pump communicated with the vacuum chamber, and a low-energy ion beam system communicated with the vacuum chamber, wherein the magnetron sputtering source is connected with the vacuum chamber; the low-energy ion beam system comprises an ion beam source I, an ion beam source II, an ion beam source III and an ion beam source IV, and the four ion beam sources and the magnetron sputtering source are converged at the same geometric center. The four-channel low-energy ion beam and magnetic control composite device designed by the invention can solve the key technical problems of effective regulation and control of components, content, structure and performance of the high-entropy alloy coating, and can prepare any high-entropy alloy coating, and the thickness, type, structure and the like of the coating can be effectively and accurately regulated and controlled.
Description
Technical Field
The invention relates to the technical field of alloy coating, in particular to a high-entropy alloy coating preparation device.
Background
The high-entropy alloy (High Entropy Alloy, HEA) is a novel solid solution alloy with 4 to 13 constituent elements and 5 to 35 percent of each element. The appearance of the high-entropy alloy overturns the design concept of the traditional alloy, has more excellent mechanical property, corrosion resistance, thermal stability and the like than the traditional alloy, and becomes a research hot spot in the field of metal materials. The high-entropy alloy film is mainly prepared by magnetron sputtering and multi-arc ion plating. And installing targets containing different kinds of elements on different target tables, and transporting the target atoms to the surface of a substrate table after excitation, so that a required high-entropy alloy film can be formed on a substrate. How to control the elemental composition and elemental ratio is an important issue in the manufacturing process. The prior art adopts the spliced target to control the composition and the proportion, but the spliced target is required to be prefabricated, cannot be adjusted in real time according to actual conditions, and is difficult to flexibly adjust in actual application.
Therefore, how to provide a high-entropy alloy coating preparation device with controllable components, adjustable components and convenient real-time control is a problem to be solved by the person skilled in the art.
Disclosure of Invention
In view of the above, the invention provides a device and a method for preparing a high-entropy alloy coating, which solve the key technical problems of realizing the composition, content and structure regulation of the high-entropy alloy coating.
In order to achieve the above purpose, the invention adopts the following technical scheme:
The invention provides a high-entropy alloy coating preparation device, which comprises a vacuum chamber, a magnetron sputtering source connected with the vacuum chamber, a molecular pump communicated with the vacuum chamber, and further comprises: a low energy ion beam system in communication with the vacuum chamber;
The low-energy ion beam system comprises an ion beam source I, an ion beam source II, an ion beam source III and an ion beam source IV, wherein the ion beam source I, the ion beam source II, the ion beam source III, the ion beam source IV and the magnetron sputtering source are converged at the same geometric center.
Preferably, the preparation device further comprises a maintenance pump communicated with the molecular pump and a roughing mechanical pump connected with the maintenance pump.
Preferably, a gate valve is arranged between the molecular pump and the vacuum chamber.
Further, the gate valve is connected with the vacuum chamber through a flange, and the molecular pump is connected with the gate valve through calipers.
Preferably, the first ion beam source, the second ion beam source, the third ion beam source and the fourth ion beam source have the same structure and comprise a cathode arc source, a strong pulse magnetic field, an anode cylinder, a magnetic filter and a focusing coil which are sequentially connected, wherein the focusing coil is connected to the vacuum chamber and is positioned in the vacuum chamber.
Further, the cathode arc source is connected with the high-intensity pulsed magnetic field through a flange, the high-intensity pulsed magnetic field is connected with the anode cylinder through an insulating bolt, the anode cylinder is connected with the magnetic filter through a flange, the magnetic filter is connected with the focusing coil through a flange, and the focusing coil is connected with the vacuum chamber through a flange.
Further, rubber sealing rings are arranged at the joint of the cathode arc source and the strong pulse magnetic field, the joint of the strong pulse magnetic field and the anode cylinder and the joint of the magnetic filter and the focusing coil; rubber sealing rings are arranged at the joint of the anode cylinder and the magnetic filter and the joint of the focusing coil and the vacuum chamber.
Further, the focusing coil is an alternating current with the frequency of 1-60 Hz and the current magnitude of-10A, the phase of the focusing coil of the ion beam source I is the same as that of the focusing coil of the ion beam source III, the phase of the focusing coil of the ion beam source II is the same as that of the focusing coil of the ion beam source IV, and the phase of the focusing coil of the ion beam source I is opposite to that of the focusing coil of the ion beam source II.
Preferably, the intersection angle between the first ion beam source, the second ion beam source, the third ion beam source and the fourth ion beam source is 135 degrees.
Preferably, the air pressure of the vacuum chamber is 6×10 -3～6*10-2 Pa.
Compared with the prior art, the invention discloses a preparation device and a preparation method for a high-entropy alloy coating, which have the following beneficial effects:
The four-channel low-energy ion beam and magnetic control composite device designed by the invention can solve the key technical problems of effective regulation and control of components, content, structure and performance of the high-entropy alloy coating, and can prepare any high-entropy alloy coating, and the thickness, type, structure and the like of the coating can be effectively and accurately regulated and controlled. The device can realize uniform and stable deposition of the high-entropy alloy film on the surface of the hard or flexible substrate, the deposition rate of the high-entropy alloy of the whole system can be 50-700 nm/min, the film uniformity is high, and the problem of solid solution solubility limit is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is an overall structure diagram of a high-entropy alloy coating preparation device of the invention;
FIG. 2 is a diagram of a low energy ion beam structure of a high entropy alloy coating preparation apparatus according to the present invention;
FIG. 3 is a flow chart of the preparation principle of a high-entropy alloy coating preparation device;
FIG. 4 is a diagram showing the structure of a magnetron sputtering source of the high-entropy alloy coating preparation device;
In the figure: 101-a rough pumping mechanical pump; 102-a vacuum chamber; 103-a magnetron sputtering source; 104-gate valve; 105-molecular pump; 106-ion beam source one; 107-ion beam source two; 108-ion beam source three; 109-ion beam source four; 110-maintenance pump; 201-cathode arc source one; 202-strong pulse magnetic field I; 203-anode cylinder one; 204-magnetic filter one; 205-focus coil one; 206-cathode arc source two; 207-strong pulsed magnetic field two; 208-anode cylinder II; 209-magnetic filter two; 210-focusing a second coil; 211-cathode arc source three; 212-strong pulse magnetic field III; 213-anode barrel three; 214-magnetic filter three; 215-focusing a third coil; 216-cathode arc source four; 217-intense pulsed magnetic field IV; 218-anode cylinder four; 219-magnetic filter four; 220-focusing coil IV; 301-pole shoe, 302-magnet, 303-target.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the apparatus for preparing the high-entropy alloy coating comprises a vacuum chamber 102, a magnetron sputtering source 103 connected with the vacuum chamber 102, a molecular pump 105 communicated with the vacuum chamber 102, and further comprises: a low energy ion beam system in communication with the vacuum chamber 102;
as shown in fig. 4, the magnetron sputtering source 103 includes a pole piece 301, a magnet 302, and a target 303;
As shown in fig. 1, the low-energy ion beam system includes a first ion beam source 106, a second ion beam source 107, a third ion beam source 108 and a fourth ion beam source 109, where the first ion beam source 106, the second ion beam source 107, the third ion beam source 108, the fourth ion beam source 109 and the magnetron sputtering source 103 are converged in the same geometric center; a gate valve 104 is arranged between the molecular pump 105 and the vacuum chamber 102;
As shown in fig. 1 and 2, the first ion beam source 106, the second ion beam source 107, the third ion beam source 108 and the fourth ion beam source 109 have the same structure, wherein the first ion beam source 106 includes a first cathode arc source 201, a first intense pulse magnetic field 202, a first anode cylinder 203, a first magnetic filter 204 and a first focusing wire package 205 which are sequentially connected, the second ion beam source 107 includes a second cathode arc source 206, a second intense pulse magnetic field 207, a second anode cylinder 208, a second magnetic filter 209 and a second focusing wire package 210 which are sequentially connected, the third ion beam source 108 includes a third cathode arc source 211, a third intense pulse magnetic field 212, a third anode cylinder 213, a third magnetic filter 214 and a third focusing wire package 215 which are sequentially connected, the fourth ion beam source 109 includes a fourth cathode arc source 216, a fourth intense pulse magnetic field 217, a fourth anode cylinder 218, a fourth magnetic filter 219 and a fourth focusing wire package 220 which are sequentially connected, and the first focusing wire package 205, the second focusing wire package 210, the third focusing wire package 215 and the fourth focusing wire package 220 are all connected to the vacuum chamber 102 and are all located in the vacuum chamber 102;
In some specific modifications, as shown in fig. 2, the first cathode arc source 201 is connected to the first intense pulsed magnetic field 202 by a flange and a bolt, the first intense pulsed magnetic field 202 is connected to the first anode cylinder 203 by an insulating bolt, the first anode cylinder 203 is connected to the first magnetic filter 204 by an insulating flange and an insulating bolt, the first magnetic filter 204 is connected to the first focusing coil 205 by a flange and a bolt, and the first focusing coil 205 is connected to the vacuum chamber 102 by a flange and a bolt; the structure and connection relation of the ion beam source two 107, the ion beam source three 108 and the ion beam source four 109 are the same as those of the ion beam source one 106;
the first focusing coil 205, the second focusing coil 210, the third focusing coil 215 and the fourth focusing coil 220 are all alternating currents with the frequency of 1-60 Hz and the current size of-10A, the first focusing coil 205 and the third focusing coil 215 have the same phase, the second focusing coil 210 and the fourth focusing coil 220 have the same phase, and the first focusing coil 205 and the third focusing coil 215 have opposite phases;
In some specific further improved technical solutions, as shown in fig. 2, in the ion beam source one 106, rubber sealing rings are disposed at the connection between the cathode arc source one 201 and the intense pulsed magnetic field one 202, the connection between the intense pulsed magnetic field one 202 and the anode cylinder one 203, and the connection between the magnetic filter one 204 and the focusing coil one 205; rubber sealing rings are arranged at the joint of the first anode cylinder 203 and the first magnetic filter 204 and at the joint of the first focusing coil 205 and the vacuum chamber 102.
In some specific improvements, the preparation device further comprises a maintenance pump 110 in communication with the molecular pump 105 and a roughing mechanical pump 101 connected to the maintenance pump 110, to maintain and stabilize the vacuum degree of the vacuum chamber 102.
Further, the gate valve is connected with the vacuum chamber through a flange, the molecular pump is connected with the gate valve through calipers, and the calipers are stainless steel calipers.
In some specific improvements, the first ion beam source 106, the second ion beam source 107, the third ion beam source 108 and the fourth ion beam source 109 form an angle of 135 ° with each other.
In some specific modifications, the vacuum chamber 102 has a pressure of 6 x 10 -3～6*10- 2 Pa during deposition.
Referring to the device structure of fig. 1-2, as in the preparation flow of fig. 3, in the deposition process, the device is started, four low-energy ion beam sources are deposited together with a magnetron sputtering technology to prepare a high-entropy alloy coating, and meanwhile, 4 low-energy ion beam arc sources and the magnetron sputtering sources are started to carry out codeposition, so that multi-element ion beam mixing is realized, and high-entropy alloy film deposition is realized. At least 6 metal alloy coatings can be prepared, the maximum metal can be 15 metals, amorphous or nanocrystalline can be prepared, the high-entropy alloy deposition rate of the whole system can be 50-700 nm/min, the temperature in the deposition process can be controlled to be 50-500 DEG, the uniformity of the film layer is reflected in the uniformity of the resistance, and the difference deviation is not more than +/-5%; the high-entropy alloy film layer made on the flexible polymer has good compactness, and the number of pinholes is not more than 5 within the range of 1cm multiplied by 1cm when the thickness of the film layer is 1 mu m.
Example 1
Polymeric material: polyimide 25 μm;
Ion beam source 1: target TiAlSi (5:4:1) arc flow 90A;
Ion beam source 2: target CrAl (5:5) arc flow 100A;
Ion beam source 3: a target Mo arc current 120A;
Ion beam source 4: a target V arc flow 100A;
Magnetron sputtering: the target Nb, ar gas is 90sccm, the power is 3kW, the deposition is 15min, the thickness is 1 mu m, the deposition temperature is 150 ℃, and the number of pinholes is 1 in the range of 1cm multiplied by 1 cm.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The utility model provides a high entropy alloy coating preparation facilities, includes vacuum chamber, with the magnetron sputtering source that vacuum chamber is connected, with the molecular pump of vacuum chamber intercommunication, its characterized in that still includes: a low energy ion beam system in communication with the vacuum chamber;
The low-energy ion beam system comprises an ion beam source I, an ion beam source II, an ion beam source III and an ion beam source IV, wherein the ion beam source I, the ion beam source II, the ion beam source III, the ion beam source IV and the magnetron sputtering source are converged at the same geometric center.
2. The apparatus for preparing a high-entropy alloy coating as recited in claim 1, further comprising a maintenance pump in communication with the molecular pump and a roughing mechanical pump in communication with the maintenance pump.
3. The apparatus for preparing a high-entropy alloy coating according to claim 1, wherein a gate valve is provided between the molecular pump and the vacuum chamber.
4. The device for preparing the high-entropy alloy coating according to claim 3, wherein the gate valve is connected with the vacuum chamber by adopting a flange, and the molecular pump is connected with the gate valve through a caliper.
5. The apparatus for preparing a high-entropy alloy coating according to claim 1, wherein the first ion beam source, the second ion beam source, the third ion beam source and the fourth ion beam source have the same structure and each comprise a cathode arc source, a strong pulse magnetic field, an anode cylinder, a magnetic filter and a focusing coil which are sequentially connected, wherein the focusing coil is connected to the vacuum chamber and the focusing coil is positioned in the vacuum chamber.
6. The apparatus for preparing a high-entropy alloy coating according to claim 5, wherein the cathode arc source is connected with the high-pulse magnetic field through a flange, the high-pulse magnetic field is connected with the anode cylinder through an insulating bolt, the anode cylinder is connected with the magnetic filter through a flange, the magnetic filter is connected with the focusing coil through a flange, and the focusing coil is connected with the vacuum chamber through a flange.
7. The high-entropy alloy coating preparation device according to claim 6, wherein rubber sealing rings are arranged at the joint of the cathode arc source and the high-intensity pulsed magnetic field, the joint of the high-intensity pulsed magnetic field and the anode cylinder and the joint of the magnetic filter and the focusing coil; rubber sealing rings are arranged at the joint of the anode cylinder and the magnetic filter and the joint of the focusing coil and the vacuum chamber.
8. The apparatus of claim 5, wherein the focusing coil is an alternating current with a frequency of 1-60 Hz and a current magnitude of-10A, the first ion beam source is in phase with the focusing coil of the third ion beam source, the second ion beam source is in phase with the focusing coil of the fourth ion beam source, and the first ion beam source is in opposite phase with the focusing coil of the second ion beam source.
9. The apparatus of claim 1, wherein the angle of intersection between the first ion beam source, the second ion beam source, the third ion beam source and the fourth ion beam source is 135 °.
10. The apparatus according to any one of claims 1 to 9, wherein the vacuum chamber has a gas pressure of 6 x 10 -3～6*10-2 Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410641834.4A CN118222993A (en) | 2024-05-23 | 2024-05-23 | High-entropy alloy coating preparation device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410641834.4A CN118222993A (en) | 2024-05-23 | 2024-05-23 | High-entropy alloy coating preparation device |
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| CN118222993A true CN118222993A (en) | 2024-06-21 |
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| CN202410641834.4A Pending CN118222993A (en) | 2024-05-23 | 2024-05-23 | High-entropy alloy coating preparation device |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774104A (en) * | 2012-04-01 | 2014-05-07 | 湖南大学 | Device for ion beam-magnetron sputtering combined film coating |
| CN109881160A (en) * | 2019-03-08 | 2019-06-14 | 北京师范大学 | A kind of precipitation equipment |
| CN109913823A (en) * | 2019-04-04 | 2019-06-21 | 北京师范大学 | A kind of light water reactor zirconium pipe coating |
| CN213142170U (en) * | 2020-05-29 | 2021-05-07 | 星弧涂层新材料科技（苏州）股份有限公司 | Magnetron sputtering and ion beam integrated type coating equipment |
| CN115652259A (en) * | 2022-10-12 | 2023-01-31 | 北京交通大学 | High-entropy alloy composite membrane and preparation method and application thereof |
| CN116855888A (en) * | 2023-07-25 | 2023-10-10 | 北京师范大学 | Flexible high-entropy alloy coating and preparation method and application thereof |
-
2024
- 2024-05-23 CN CN202410641834.4A patent/CN118222993A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774104A (en) * | 2012-04-01 | 2014-05-07 | 湖南大学 | Device for ion beam-magnetron sputtering combined film coating |
| CN109881160A (en) * | 2019-03-08 | 2019-06-14 | 北京师范大学 | A kind of precipitation equipment |
| CN109913823A (en) * | 2019-04-04 | 2019-06-21 | 北京师范大学 | A kind of light water reactor zirconium pipe coating |
| CN213142170U (en) * | 2020-05-29 | 2021-05-07 | 星弧涂层新材料科技（苏州）股份有限公司 | Magnetron sputtering and ion beam integrated type coating equipment |
| CN115652259A (en) * | 2022-10-12 | 2023-01-31 | 北京交通大学 | High-entropy alloy composite membrane and preparation method and application thereof |
| CN116855888A (en) * | 2023-07-25 | 2023-10-10 | 北京师范大学 | Flexible high-entropy alloy coating and preparation method and application thereof |
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