CN118213288A - Method for manufacturing detection probe for simultaneously detecting ion implantation dosage and temperature and detection method - Google Patents
Method for manufacturing detection probe for simultaneously detecting ion implantation dosage and temperature and detection method Download PDFInfo
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- CN118213288A CN118213288A CN202410627039.XA CN202410627039A CN118213288A CN 118213288 A CN118213288 A CN 118213288A CN 202410627039 A CN202410627039 A CN 202410627039A CN 118213288 A CN118213288 A CN 118213288A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a method for manufacturing a detection probe for simultaneously detecting ion implantation dosage and temperature and a detection method, wherein the manufacturing method comprises the following steps: s1, manufacturing a front insulating medium film layer and a back insulating medium film layer; s2, manufacturing a lower electrode layer; s3, depositing a pyroelectric material film layer; s4, manufacturing an upper electrode layer; s5, forming a photoresist pattern layer; s6, forming an open slot; s7, removing the photoresist and the back insulating medium film layer; s8, fixing a glass sheet on the back surface of the silicon wafer. According to the detection method, a detection probe is fixed on a conversion circuit board to form a wafer tray, ion implantation is performed on the wafer and the detection probe at the same time, temperature and voltage are detected through the detection probe, and ion implantation dosage is finally obtained according to a standard corresponding relation. The detection probe is manufactured by a semiconductor process, and the detection method simultaneously detects the implantation dosage and the temperature of the wafer during ion implantation, so that the detection result is more accurate.
Description
Technical Field
The invention relates to the technical field of ion implantation, in particular to a method for manufacturing a detection probe for simultaneously detecting ion implantation dosage and temperature and a detection method.
Background
Ion implantation is a critical step in semiconductor manufacturing to alter the electrical properties of semiconductor materials and is critical to controlling the concentration and depth profile of impurities. At the same time, monitoring the dose and temperature during ion implantation is important to ensure product quality and process control. However, the existing monitoring device often cannot measure the dose and the substrate temperature at the same time with high precision, and mainly detects the ion implantation dose.
The current dose detection method mainly uses an angular faraday cup for detection. Ions generated by the ion source are accelerated by the accelerating tube to form an ion beam, the ion beam passes through a circular through hole before entering the ion implantation cavity, the Faraday cup is arranged around the circular through hole, and the cross section of the ion beam is larger than that of the circular through hole, so that part of ions can be detected by the Faraday cup when the ion beam passes through the circular through hole, the ion quantity in the ion beam is detected by the Faraday cup, and finally, the ion implantation quantity implanted into a wafer is obtained.
The current detection method of such ion implantation then still has the following disadvantages:
1. since the mode of faraday cup detection is theoretically a spot check mode, since faraday cups detect only a small area in the ion beam, the end result is that the value detected by faraday cups calculates the ion beam dose on the premise that the ion beam ions are completely and uniformly distributed, and the dose detection mode has little influence on the large-dose implantation process, but has very large influence on the high-resolution and small-dose ion implantation, so that the ion implantation amount is inaccurate, and the performance during the power period of the semiconductor is influenced.
2. Because there is a distance between the position detected by the faraday cup and the wafer, the ion beam needs to fly for a distance after being detected, and the uncertainty factor of the flying process is relatively large, so that the inaccuracy of the ion state and the ion quantity is easily caused, in particular, some processes can neutralize the ions by using electron spray before the ions are injected into the wafer, so that neutral atoms are formed and injected into the wafer, and at the moment, the influence on the ion injection dose is larger, and finally the detected data are not consistent with the actually injected dose.
Disclosure of Invention
The first technical problem to be solved by the invention is as follows: the method for manufacturing the detection probe for simultaneously detecting the ion implantation dosage and the temperature can manufacture the detection probe which is convenient for simultaneously detecting the ion implantation dosage and the temperature, so that the detected dosage is more accurate.
The second technical problem to be solved by the invention is as follows: the detection method can detect the implantation dose and the temperature of the wafer at the same time during ion implantation, and the detection result is more accurate.
In order to solve the first technical problem, the technical scheme of the invention is as follows: a method for manufacturing a detection probe for simultaneously detecting ion implantation dosage and temperature comprises the following steps:
S1, respectively growing a front insulating medium film layer and a back insulating medium film layer on the front surface and the back surface of a silicon wafer;
S2, manufacturing a patterned lower electrode layer on the front insulating medium film layer, wherein the lower electrode layer comprises functional lower electrodes and pin lower electrodes, the number of the functional lower electrodes is equal, the functional lower electrodes are arranged in pairs, the functional lower electrodes are discretely distributed in the middle of the silicon wafer, the pin lower electrodes are positioned outside the functional lower electrodes, and a lower connecting wire is connected between each functional lower electrode and each pin lower electrode;
S3, depositing a pyroelectric material film layer on the functional lower electrode;
S4, growing an upper electrode layer on the front insulating dielectric film layer and the pyroelectric material film layer; the upper electrode layer comprises functional upper electrodes and pin upper electrodes, wherein the functional upper electrodes and the pin upper electrodes are equal in number and are arranged in pairs, the functional upper electrodes are positioned on the upper surface of the pyroelectric material film layer, the pin upper electrodes are positioned on the upper surface of the front insulating medium film layer and are distributed in a discrete mode, and an upper connecting wire is connected between each pin upper electrode and the corresponding functional upper electrode; the upper connecting wire and the lower connecting wire are mutually independent and are not contacted; the upper electrode of the pin and the lower electrode of the pin are mutually independent and do not contact, and the functional upper electrode, the pyroelectric material film layer and the functional lower electrode which are mutually overlapped form a probe monomer;
S5, forming a photoresist pattern layer on the surface of the back insulating medium film layer, wherein the photoresist pattern layer is provided with pattern grooves corresponding to the pyroelectric material film layers one by one;
S6, etching the back insulating medium film layer and the silicon wafer from the back by taking the photoresist pattern layer as a mask to form open grooves corresponding to the pyroelectric material film layer one by one, wherein the bottoms of the open grooves are level with the back of the front insulating medium film layer;
S7, removing the photoresist pattern layer and the back insulating medium film layer;
s8, fixing the glass sheet on the back surface of the silicon wafer in a vacuum environment.
Preferably, the silicon wafer is a monocrystalline silicon wafer, and the front insulating dielectric film layer and the back insulating dielectric film layer are silicon nitride layers or silicon dioxide layers or combined layers formed by stacking the silicon nitride layers and the silicon dioxide layers.
Preferably, the lower electrode layer is any one or alloy of gold, platinum, silver, copper, tungsten and molybdenum, and the thickness of the lower electrode layer is 50nm-5um.
Preferably, the pyroelectric material in the pyroelectric material film layer is one of triethylene glycol sulfate and derivatives thereof, amantadine formate, polyvinylidene fluoride, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, lead zirconate titanate (PZT), barium strontium titanate, lead scandium tantalate and lead magnesium niobium titanate.
Wherein, the thickness of the pyroelectric material film layer is preferably 50nm-5um.
Wherein, preferably, the step S7 uses a polishing device to polish and remove the back insulating medium film layer.
Preferably, the fixing manner of the glass sheet in step S8 is performed by ultraviolet light assisted bonding, or anodic bonding, or interlayer bonding.
After the technical scheme is adopted, the invention has the following effects: 1. the photoetching, etching and film processes adopted by the manufacturing method of the detection probe can be effectively compatible with the CMOS process, and the detection probe is produced in a large scale and has obvious manufacturing cost benefit; 2. the integration level is high, the upper electrode, the lower electrode and the pyroelectric material film layer are integrated on the same silicon wafer, so that the simultaneous measurement of the dosage and the temperature is realized, and the complexity and the cost in the manufacturing process are reduced; 3. through having seted up the open slot and utilizing the glass piece to fix and form the vacuum chamber, the tank bottom is parallel and level with the back of openly insulating medium thin film layer, can have the sensitive region of further optimization, ensures that the heat that produces when the ion implantation can directly act on pyroelectric material, reduces the transmission of heat, ensures that the voltage that produces because of pyroelectric effect between upper electrode and the lower electrode is stable to every probe monomer's response speed and sensitivity have been improved.
In order to solve the second technical problem, the technical scheme of the invention is as follows: the detection method for simultaneously detecting the ion implantation dosage and the temperature uses a detection device, wherein the detection device comprises a conversion circuit board and a detection probe, the detection probe is adhered on the conversion circuit board to form a wafer tray, and an external plug connected with a controller is arranged on the conversion circuit board; the conversion circuit board is provided with extraction electrodes which are in one-to-one correspondence with the pin upper electrodes and the pin lower electrodes, and each extraction electrode is in conductive connection with the corresponding pin upper electrode and pin lower electrode; the wafer tray is provided with a placement area convenient for placing the wafer, each probe monomer forms a detection area together, and at least one part of probe monomers in the detection area are positioned outside the placement area;
The detection method comprises the steps of firstly, placing a detection device on an ion implanter for calibration to obtain a standard corresponding relation among voltage, temperature and implantation dosage between a functional upper electrode and a functional lower electrode; and then placing the detection device in a vacuum injection cavity of the ion implanter, connecting an external plug with the controller, placing the wafer in a placement area, fixing the wafer, starting the ion implanter, injecting the ion beam on the wafer according to a set scanning route, and injecting ions into the wafer by the scanning area of the ion beam being larger than or equal to a detection area, wherein the ions are injected into a functional upper electrode, detecting the voltage between the functional upper electrode and a functional lower electrode in real time, and calculating the current ion injection dosage and temperature according to a standard corresponding relation.
After the technical scheme is adopted, the invention has the following effects: firstly, the detection device is directly used as a crystal support during ion implantation, that is to say, a wafer is directly fixed on a detection probe, and the detection area is the final time of ion implantation in the wafer, so that the condition that the detection result is inaccurate due to the instability of an ion beam in the flight process can be avoided, and the error is reduced as far as possible; in addition, the detection method utilizes the detection probe, when the detection probe is used, ions are injected into the wafer and are also injected into the functional upper electrode, and the functional upper electrode can stop the injected ion beam or atomic beam in the functional upper electrode rapidly when the ions are injected at a high speed and simultaneously generate heat energy effectively, the heat energy can be rapidly conducted onto the pyroelectric material film layer, the pyroelectric material can generate electric charges when the temperature changes, the temperature change is converted into measurable electric signals, and thus, voltages are formed between the functional upper electrode and the functional lower electrode on the upper side and the lower side of the pyroelectric material film layer, the injected dose and the temperature can be accurately obtained through the voltages, the detection result is more accurate, the response speed is also faster, the ion injection parameters can be controlled more accurately, and adverse effects caused by overhigh temperature can be avoided.
Preferably, the detection method further comprises a self-calibration method, and the self-calibration method is started after the detection device is used for a period of time; when calibrating, the wafer is not put in, but ion implantation is directly started, at the moment, the scanning area of the ion beam covers all the upper functional electrodes, and the voltages between all the upper functional electrodes and the corresponding lower functional electrodes are detected; the method can perform self-calibration on the detection device after a period of use, and implant ions on all functional upper electrodes originally covered by a wafer during self-calibration, so that detection results between the probe monomers in the placement area and the probe monomers outside the placement area can be obtained, and the error compensation coefficient can be calculated, thereby realizing self-calibration, further prolonging the service life of the detection device and ensuring the accuracy of long-time detection after the self-calibration method.
Preferably, the specific mode of conductive connection between each extraction electrode and the corresponding pin upper electrode and pin lower electrode is welding, wire bonding or conductive adhesive bonding.
Drawings
The invention will be further described with reference to the drawings and examples.
FIG. 1 is a schematic diagram of a structure of a lower electrode layer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a structure after a pyroelectric material thin film layer is deposited in an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of the upper electrode layer according to the embodiment of the invention;
FIG. 4 is a schematic diagram of the structure of the detecting device;
FIG. 5 is a partial cross-sectional view of a silicon wafer, front side dielectric thin film layer and back side dielectric thin film layer;
FIG. 6 is a partial cross-sectional view of the structure after the lower electrode layer has been fabricated;
FIG. 7 is a partial cross-sectional view of the structure after deposition of a thin film layer of pyroelectric material;
FIG. 8 is a partial cross-sectional view of the structure after the upper electrode layer has been fabricated;
FIG. 9 is a partial cross-sectional view of the structure after forming the open slot;
FIG. 10 is a partial cross-sectional view of the structure after the photoresist pattern layer and the backside insulating dielectric film layer;
FIG. 11 is a schematic view of the structure after the glass sheet is positioned;
In the accompanying drawings: in the accompanying drawings: 1. a silicon wafer; 2. a front insulating dielectric film layer; 21. a silicon dioxide layer; 22. a silicon nitride layer; 3. a lower electrode layer; 31. a functional lower electrode; 32. a pin lower electrode; 33. a lower connecting wire; 4. a placement area; 5. a back insulating dielectric thin film layer; 6. a pyroelectric material film layer; 7. an upper electrode layer; 71. a functional upper electrode; 72. an electrode on the pin; 73. an upper connecting wire; 8. an external plug; 9. a controller; 10. an open slot; 11. a glass sheet; 12. a conversion circuit board; 13. and an extraction electrode.
Detailed Description
The present invention will be described in further detail with reference to the following examples.
As shown in fig. 1 to 11, a method for manufacturing a detection probe for simultaneously detecting ion implantation dose and temperature includes the following steps:
S1, respectively growing a front insulating medium film layer 2 and a back insulating medium film layer 5 on the front surface and the back surface of a silicon wafer 1;
Firstly, monocrystalline silicon is preferably adopted as the silicon wafer 1, and the monocrystalline silicon wafer 1 needs to be thoroughly cleaned to remove pollutants and oxide layers on the surface. Then a layer of uniform dielectric film grows on the front surface and the back surface of the silicon wafer 1 through chemical vapor deposition, physical vapor deposition or atomic layer deposition and other technologies. The dielectric film layer functions to provide insulation and mechanical support. The insulating medium film layer not only prevents the direct contact between the surface of the silicon wafer 1 and the external environment and reduces the risks of chemical corrosion and physical damage, but also provides a stable substrate for the subsequent electrode and pyroelectric material. The silicon wafer 1 is a monocrystalline silicon wafer 1, the front insulating medium film layer 2 and the back insulating medium film layer 5 are silicon nitride layers 22 or silicon dioxide layers 21 or combined layers formed by stacking the silicon nitride layers 22 and the silicon dioxide layers 21, and the thickness range is between 50nm and 10 um.
In this embodiment, a combination layer is preferable, and first, a single crystal silicon wafer 1 of four inches of n-Si (100) is used as a substrate, and thorough cleaning and pretreatment are performed to ensure the cleanliness of the surface. Under ultra-clean environment, 500nm thick silicon dioxide 101 is grown by thermal oxidation, and then the silicon dioxide is sent into Low Pressure Chemical Vapor Deposition (LPCVD) equipment, and a layer of 300nm thick silicon nitride (Si 3N 4) is grown on the surface of the silicon dioxide, so that a composite dielectric film layer is formed. The LPCVD process is performed in a vacuum chamber, and uses dichlorosilane and ammonia gas as source gases to react on the surface of the heated silicon wafer 1 to form a uniform silicon nitride layer 22.
S2, manufacturing a patterned lower electrode layer 3 on the front insulating medium film layer 2, wherein the lower electrode layer 3 comprises functional lower electrodes 31 and pin lower electrodes 32 which are equal in number and are arranged in pairs, the functional lower electrodes 31 are discretely distributed in the middle of the silicon wafer 1, the pin lower electrodes 32 are positioned outside the functional lower electrodes 31, and a lower connecting line 33 is connected between each functional lower electrode 31 and each pin lower electrode 32; wherein the number of the functional lower electrodes 31 is plural and arranged in an array. The lower connection line 33 may be formed by metal bonding or welding after the functional lower electrode 31 and the lead lower electrode 32 are molded.
The patterned lower electrode layer 3 is designed to achieve specific electrical properties, and these electrodes are used to apply a voltage to the pyroelectric material or collect charges generated thereby. The design of array arrangement can optimize electric field distribution, improve charge collection efficiency to the sensitivity and the resolution ratio of reinforcing detection probe. The lower electrode layer 3 is any one or alloy of gold, platinum, silver, copper, tungsten and molybdenum, and the thickness of the lower electrode layer 3 is 50nm-5um. The lower electrode layer 3 can be prepared by adopting sputtering, electroplating technology, electron beam evaporation, thermal evaporation and other technologies, ohmic electrical contact is formed between the lower electrode and the pyroelectric material film layer 6, and voltage generated by temperature difference in the pyroelectric material is better collected.
The silicon nitride layer 22 is first cleaned using standard uv photolithography process and then spin coated with AZ6130 photoresist. The photoresist is exposed to light using an ultraviolet lithography machine to form the desired pattern. The exposed photosensitive glue is subjected to development treatment, and the photosensitive glue in the exposed area is removed, so that the required pattern is left. Subsequently, a 300nm thick metal film was deposited using an electron beam vapor deposition technique and stripped in acetone to form the patterned lower electrode layer 3.
S3, depositing a pyroelectric material film layer 6 on the functional lower electrode 31;
and defining a pattern with a pattern area just covering the pattern of the patterned lower electrode layer 3 by adopting an ultraviolet lithography technology. And (3) depositing a lead zirconate titanate (PZT) pyroelectric film 1um thick by magnetron sputtering, and stripping the film in acetone to remove the residual heat. A pyroelectric material film layer 6 is formed with a size and shape conforming to the design requirements.
The pyroelectric material film is a core part for detection, and when the temperature of the pyroelectric material changes, charges are generated, so that the temperature change is converted into a measurable electric signal. When the ion beam or the atomic beam is injected, kinetic energy is converted into heat energy and stops in the upper electrode layer 7, and the temperature change of the pyroelectric material measured can be converted into the injection dosage and the temperature.
Preferably, the pyroelectric material in the pyroelectric material thin film layer 6 is one of triethylene glycol sulfate and its derivative, amantadine formate, polyvinylidene fluoride, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, lead zirconate titanate (PZT), barium strontium titanate, lead scandium tantalate, lead magnesium niobium titanate. The thickness of the pyroelectric material film layer 6 is 50nm-5um.
The pyroelectric material releases charges outwards when temperature changes, and the fundamental principle is that the spontaneous polarization intensity of the material changes with the change of temperature. The pyroelectric material structure does not have a symmetrical center, and electric dipole moments which are orderly arranged appear, and the structure integrally presents spontaneous polarization in a unified vector direction. The surface of the material has positive/negative bound charges in the direction of polarization vector, so that the surface can absorb free charges with medium number and opposite sign in the environment, and thus the material is not electrically developed. When the temperature of the pyroelectric material changes due to external stimulus, the strength of spontaneous polarization changes, and the amount of surface bound charge changes. After a certain amount of bound charges are neutralized, redundant free charges form an electric field in space, the electric field is externally charged, and if the surface of the material is connected with an external circuit, positive and negative free charges flow to form current, namely pyroelectric current.
The open slot 10 is arranged when the detection probe in the scheme of the invention is manufactured, and the bottom of the open slot 10 is flush with the front insulating medium film layer 2, so that the heat loss is directly reduced as much as possible, and the pyroelectric material can be ensured to be used in ion implantation.
S4, growing an upper electrode layer 7 on the front insulating medium film layer 2 and the pyroelectric material film layer 6; the upper electrode layer 7 comprises a functional upper electrode 71 and pin upper electrodes 72 which are equal in number and are arranged in pairs, the functional upper electrodes 71 are positioned on the upper surface of the pyroelectric material film layer 6, the pin upper electrodes 72 are positioned on the upper surface of the front insulating medium film layer 2 and are distributed in a discrete manner, and an upper connecting wire 73 is connected between each pin upper electrode 72 and the corresponding functional upper electrode 71; the upper connecting wire 73 and the lower connecting wire 33 are independent and do not contact with each other; the upper pin electrode 72 and the lower pin electrode 32 are mutually independent and do not contact, and the functional upper electrode 71, the pyroelectric material film layer 6 and the functional lower electrode 31 which are mutually overlapped form a probe monomer;
The main function of the functional electrode 71 is to ensure that the charge generated by the pyroelectric material is efficiently and stably transferred to the measurement circuit. Meanwhile, the material also plays a role in protecting the pyroelectric material from chemical corrosion or physical damage. The composition of the upper electrode layer 7 may be the same as or different from the composition of the lower electrode layer 3. The metal of the surface layer is preferably metal with high density and good heat conduction performance, such as gold, platinum, molybdenum, tungsten, lead, silver and copper, and the thickness is 50nm to 5um. The dense metal can rapidly stop the implanted ion beam or atomic beam in the metal while effectively generating thermal energy. The heat conduction performance is good, heat can be quickly conducted to the surface of the pyroelectric material, and the detection sensitivity is enhanced. The functional electrode 71 needs to make good electrical contact with the pyroelectric material to maximize charge collection. Without any electrical contact between the functionally upper electrode 71 and the functionally lower electrode 31, the voltage signal due to the temperature difference is effectively measured from the pyroelectric material. The upper connection line 73 is formed by a metal bonding process or a soldering method after functioning as the upper electrode 71 and the upper lead electrode 72.
And the formation of the functional upper electrode 71 is realized by an overlay process, and a 300nm thick metal film is deposited in a high vacuum electron beam evaporation device. The upper electrode layer 7 is formed by peeling in acetone, and the functional upper electrode 71 covers the pyroelectric material thin film layer 6.
S5, forming a photoresist pattern layer on the surface of the back insulating medium film layer 5, wherein the photoresist pattern layer is provided with pattern grooves corresponding to the pyroelectric material film layers 6 one by one;
S6, etching the back insulating medium film layer 5 and the silicon wafer 1 from the back by using a dry etching process in deep silicon etching equipment by using the photoresist pattern layer as a mask to form open grooves 10 corresponding to the pyroelectric material film layer 6 one by one, wherein the photoetching depth enables the bottoms of the open grooves 10 to be level with the back surface of the front insulating medium film layer 2; at this time, the pyroelectric material film layer 6 is completely suspended on the back insulating dielectric film layer 5. And the step can ensure that ions or heat can directly act on the pyroelectric material, so that the response speed and the sensitivity of the probe are improved.
S7, removing the photoresist pattern layer and the back insulating medium film layer 5; the back surface insulating dielectric thin film layer 5 may be removed by etching or mechanical method, for example, the back surface insulating dielectric thin film layer 5 may be removed by polishing with a polishing apparatus. And the photoresist pattern layer is directly removed by a photoresist stripping process.
S8, fixing the glass sheet 11 on the back surface of the silicon wafer 1 in a vacuum environment. The fixing manner of the glass sheet 11 in step S8 is completed by ultraviolet light assisted bonding or anodic bonding or interlayer bonding technology. When the glass sheet 11 is fixed, the open groove 10 forms a closed vacuum chamber, reduces heat conduction, improves the temperature difference of the two sides of the pyroelectric material, and increases detection sensitivity.
In addition, the embodiment of the invention also discloses a detection method for simultaneously detecting the ion implantation dosage and the temperature, which uses a detection device, wherein the detection device comprises a conversion circuit board 12 and a detection probe, the detection probe is adhered on the conversion circuit board 12 to form a wafer tray, and an external plug 8 connected with a controller 9 is arranged on the conversion circuit board 12; the conversion circuit board 12 is provided with extraction electrodes 13 corresponding to the pin upper electrodes 72 and the pin lower electrodes 32 one by one, and each extraction electrode 13 is in conductive connection with the corresponding pin upper electrode 72 and pin lower electrode 32; the specific manner of conductive connection between each lead electrode 13 and the corresponding lead upper electrode 72 and lead lower electrode 32 is soldering, wire bonding or conductive adhesive bonding. The wafer tray is provided with a placement area 4 which is convenient for placing the wafer, each probe monomer forms a detection area together, and at least one part of probe monomers in the detection area are positioned outside the placement area 4;
The detection method comprises the steps of firstly, placing a detection device on an ion implanter for calibration to obtain a standard corresponding relation between voltage, temperature and implantation dosage between a functional upper electrode 71 and a functional lower electrode 31; then the detection device is placed in a vacuum injection cavity of the ion implanter, an external plug 8 is connected with a controller 9, a wafer is placed in a placement area 4 and is fixed, then the ion implanter is started, an ion beam is injected on the wafer according to a set scanning route, the scanning area of the ion beam is larger than or equal to a detection area, so that ions are injected into the wafer and are also injected into a functional upper electrode 71, the voltage between the functional upper electrode 71 and a functional lower electrode 31 is detected in real time, and the current ion injection dosage and temperature are calculated according to a standard corresponding relation.
Preferably, the detection method further comprises a self-calibration method, and the self-calibration method is started after the detection device is used for a period of time; when the ion implantation is started directly without putting a wafer in calibration, the scanning area of the ion beam covers all the functional upper electrodes 71, and the voltages between all the functional upper electrodes 71 and the corresponding functional lower electrodes 31 are detected; the method can perform self-calibration on the detection device after a period of use, and implant ions on all functional upper electrodes 71 originally covered by a wafer during self-calibration, so that detection results between the probe monomers in the placement area 4 and the probe monomers outside the placement area 4 can be used to calculate error compensation coefficients, thereby realizing self-calibration, further prolonging the service life of the detection device and ensuring the accuracy of long-time detection after the self-calibration method.
The above examples are merely illustrative of the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, and various modifications and adaptations of the technical solution of the present invention should and are intended to fall within the scope of the present invention as defined in the claims.
Claims (10)
1. A method for manufacturing a detection probe for simultaneously detecting ion implantation dosage and temperature is characterized in that: the method comprises the following steps:
S1, respectively growing a front insulating medium film layer and a back insulating medium film layer on the front surface and the back surface of a silicon wafer;
S2, manufacturing a patterned lower electrode layer on the front insulating medium film layer, wherein the lower electrode layer comprises functional lower electrodes and pin lower electrodes, the number of the functional lower electrodes is equal, the functional lower electrodes are arranged in pairs, the functional lower electrodes are discretely distributed in the middle of the silicon wafer, the pin lower electrodes are positioned outside the functional lower electrodes, and a lower connecting wire is connected between each functional lower electrode and each pin lower electrode;
S3, depositing a pyroelectric material film layer on the functional lower electrode;
S4, growing an upper electrode layer on the front insulating dielectric film layer and the pyroelectric material film layer; the upper electrode layer comprises functional upper electrodes and pin upper electrodes, wherein the functional upper electrodes and the pin upper electrodes are equal in number and are arranged in pairs, the functional upper electrodes are positioned on the upper surface of the pyroelectric material film layer, the pin upper electrodes are positioned on the upper surface of the front insulating medium film layer and are distributed in a discrete mode, and an upper connecting wire is connected between each pin upper electrode and the corresponding functional upper electrode; the upper connecting wire and the lower connecting wire are mutually independent and are not contacted; the upper electrode of the pin and the lower electrode of the pin are mutually independent and do not contact, and the functional upper electrode, the pyroelectric material film layer and the functional lower electrode which are mutually overlapped form a probe monomer;
S5, forming a photoresist pattern layer on the surface of the back insulating medium film layer, wherein the photoresist pattern layer is provided with pattern grooves corresponding to the pyroelectric material film layers one by one;
S6, etching the back insulating medium film layer and the silicon wafer from the back by taking the photoresist pattern layer as a mask to form open grooves corresponding to the pyroelectric material film layer one by one, wherein the bottoms of the open grooves are level with the back of the front insulating medium film layer;
S7, removing the photoresist pattern layer and the back insulating medium film layer;
s8, fixing the glass sheet on the back surface of the silicon wafer in a vacuum environment.
2. The method for manufacturing the detection probe for simultaneously detecting the ion implantation dose and the temperature according to claim 1, wherein the method comprises the following steps: the silicon wafer is a monocrystalline silicon wafer, and the front insulating medium film layer and the back insulating medium film layer are silicon nitride layers or silicon dioxide layers or combined layers formed by stacking the silicon nitride layers and the silicon dioxide layers.
3. The method for manufacturing the detection probe for simultaneously detecting the ion implantation dose and the temperature according to claim 2, wherein the method comprises the following steps: the lower electrode layer is one or more of gold, platinum, silver, copper, tungsten and molybdenum, and the thickness of the lower electrode layer is 50nm-5um.
4. A method for manufacturing a detection probe for simultaneously detecting an ion implantation dose and a temperature as set forth in claim 3, wherein: the pyroelectric material in the pyroelectric material film layer is one of triethylene glycol sulfate and derivatives thereof, amantadine formate, polyvinylidene fluoride, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, lead zirconate titanate (PZT), barium strontium titanate, lead scandium tantalate and lead magnesium niobium titanate.
5. The method for manufacturing the detection probe for simultaneously detecting the ion implantation dose and the temperature according to claim 4, wherein the method comprises the following steps: the thickness of the pyroelectric material film layer is 50nm-5um.
6. The method for manufacturing the detection probe for simultaneously detecting the ion implantation dose and the temperature according to claim 5, wherein the method comprises the following steps: and step S7, polishing equipment is adopted to polish and remove the back insulating medium film layer.
7. The method for manufacturing the detection probe for simultaneously detecting the ion implantation dose and the temperature according to claim 6, wherein the method comprises the following steps: and in the step S8, the fixing mode of the glass sheet is realized by adopting ultraviolet light auxiliary bonding or anode bonding or interlayer bonding technology.
8. A detection method for simultaneously detecting the ion implantation dosage and the temperature is characterized in that: the detection method uses a detection device, wherein the detection device comprises a conversion circuit board and the detection probe according to claim 1, the detection probe is adhered on the conversion circuit board to form a wafer tray, and an external plug connected with a controller is arranged on the conversion circuit board; the conversion circuit board is provided with extraction electrodes which are in one-to-one correspondence with the pin upper electrodes and the pin lower electrodes, and each extraction electrode is in conductive connection with the corresponding pin upper electrode and pin lower electrode; the wafer tray is provided with a placement area convenient for placing the wafer, each probe monomer forms a detection area together, and at least one part of probe monomers in the detection area are positioned outside the placement area;
The detection method comprises the steps of firstly, placing a detection device on an ion implanter for calibration to obtain a standard corresponding relation among voltage, temperature and implantation dosage between a functional upper electrode and a functional lower electrode; and then placing the detection device in a vacuum injection cavity of the ion implanter, connecting an external plug with the controller, placing the wafer in a placement area, fixing the wafer, starting the ion implanter, injecting the ion beam on the wafer according to a set scanning route, and injecting ions into the wafer by the scanning area of the ion beam being larger than or equal to a detection area, wherein the ions are injected into a functional upper electrode, detecting the voltage between the functional upper electrode and a functional lower electrode in real time, and calculating the current ion injection dosage and temperature according to a standard corresponding relation.
9. The method for simultaneously detecting the ion implantation dose and the temperature according to claim 8, wherein: the detection method also comprises a self-calibration method, and the self-calibration method is started after the detection device is used for a period of time; when calibrating, the wafer is not put in, but ion implantation is directly started, at the moment, the scanning area of the ion beam covers all the upper functional electrodes, and the voltages between all the upper functional electrodes and the corresponding lower functional electrodes are detected; comparing the voltage difference between the probe monomer in the placement area and the probe monomer outside the placement area, calculating an error compensation coefficient, updating the corresponding relation among the voltage, the temperature and the implantation dosage through the error compensation coefficient to form an updated compensation corresponding relation, and calculating the dosage and the temperature during the current ion implantation by utilizing the compensation corresponding relation during the ion implantation.
10. The method for simultaneously detecting the ion implantation dose and the temperature according to claim 9, wherein: the specific mode of conductive connection between each extraction electrode and the corresponding pin upper electrode and pin lower electrode is welding, wire bonding or conductive adhesive bonding.
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| CN1234614A (en) * | 1998-12-04 | 1999-11-10 | 中国科学院上海冶金研究所 | Method for enhancing responsivity of pyroelectric infrared detector |
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| CN112768598A (en) * | 2021-01-27 | 2021-05-07 | 山东大学 | Infrared pyroelectric detector and preparation method thereof |
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| CN1234614A (en) * | 1998-12-04 | 1999-11-10 | 中国科学院上海冶金研究所 | Method for enhancing responsivity of pyroelectric infrared detector |
| CN1484848A (en) * | 2000-12-22 | 2004-03-24 | 艾克塞利斯技术公司 | In-process wafer charge monitor and control system for ion implanter |
| CN111883643A (en) * | 2020-07-23 | 2020-11-03 | 中国科学院上海微系统与信息技术研究所 | Integrated mid-infrared light detector and preparation method thereof |
| CN112768598A (en) * | 2021-01-27 | 2021-05-07 | 山东大学 | Infrared pyroelectric detector and preparation method thereof |
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