CN118201467B - Preparation method of quantum signal conversion device based on semiconductor film - Google Patents
Preparation method of quantum signal conversion device based on semiconductor film Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 63
- 238000005530 etching Methods 0.000 claims abstract description 32
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 22
- 239000010955 niobium Substances 0.000 claims abstract description 22
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
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- 239000010408 film Substances 0.000 claims description 91
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
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- 239000010409 thin film Substances 0.000 claims description 4
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
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Abstract
The application discloses a preparation method of a quantum signal conversion device based on a semiconductor film, which comprises the following steps: respectively growing silicon nitride films on the first surface and the second surface of the double polished silicon wafer by adopting a low-pressure chemical vapor deposition system; exposing, developing and etching the silicon nitride films on the first surface and the second surface respectively; coating the etched first surface silicon nitride film with protective glue, performing wet etching, and then performing metallization to obtain a band gap silicon nitride film chip; growing a niobium film on one surface of a single polished silicon wafer by adopting a magnetron sputtering system; exposing, developing and etching the niobium film to obtain a superconductive microwave resonant cavity chip; and assembling and fixing the first surface of the band gap silicon nitride film chip and the niobium film surface of the superconducting microwave resonant cavity chip to obtain the quantum signal conversion device. The device realizes the mutual transmission and conversion between the quantum information carriers from microwaves to photons and the like, realizes the advantage complementation among various quantum systems, and can further construct a universal quantum information processor and a quantum network.
Description
Technical Field
The application relates to the technical field of quantum device micro-nano processing, in particular to a preparation method of a quantum signal conversion device based on a semiconductor film.
Background
The development of quantum theory and the improvement of quantum technology complement each other. Research progress in quantum technology has advanced the implementation of quantum control in many scientific fields, including quantum optics, cavity quantum electrodynamics, atomic spin ensemble, ion traps, bose einstein condensation, nitrogen vacancy color centers, and the like. The core difference between quantum physics and classical physics is the existence of quantum resources such as entanglement and coherence rooted on the quantum superposition rationale.
In quantum physics research, in order to construct a quantum information network with complete functions, various quantum systems need to be organically combined, so a quantum signal conversion device is indispensable.
Disclosure of Invention
In order to solve the above problems in the art, the present application is directed to a quantum signal conversion device and a method of manufacturing the same. The mixed quantum system combining two information lines of the superconducting microwave resonant cavity and the mechanical vibrator can realize the mutual transmission and conversion between the quantum information carriers from microwaves to photons and realize the advantage complementation among various quantum systems, thereby being capable of further constructing a universal quantum information processor and a quantum network.
According to an aspect of the present application, there is provided a method of manufacturing a quantum signal conversion device, comprising:
Respectively growing silicon nitride films on the first surface and the second surface of the double polished silicon wafer by adopting a low-pressure chemical vapor deposition system;
Exposing, developing and etching the silicon nitride films on the first surface and the second surface respectively;
Coating a protective adhesive on the silicon nitride film on the first surface, performing wet etching, and then performing metallization to obtain a band gap silicon nitride film chip;
Growing a niobium film on one surface of a single polished silicon wafer by adopting a magnetron sputtering system;
exposing, developing and etching the niobium film to obtain a superconductive microwave resonant cavity chip;
And assembling and fixing the first surface of the band gap silicon nitride film chip and the niobium film surface of the superconducting microwave resonant cavity chip to obtain the quantum signal conversion device.
The distance between the first surface of the band gap silicon nitride film chip and the niobium film surface of the superconducting microwave resonant cavity chip is smaller than 500nm.
According to some embodiments of the present application, the silicon nitride films on the first surface and the second surface are etched by a reactive ion etcher in the exposing, developing and etching processes, respectively.
According to some embodiments of the application, the etching using a reactive ion etcher is: and (3) etching by mixed gas of trifluoromethane and oxygen.
According to some embodiments of the application, wet etching uses a KOH solution. The coating of the protective glue on the silicon nitride film on the first surface further comprises the step of reinforcing the fixation of the protective glue with the silicon nitride film on the first surface by using a clamp.
According to some embodiments of the application, the metallizing comprises:
growing an aluminum film on the surface of the silicon nitride film on the first surface by using an electron beam evaporation system;
fixing the second surface on a slide glass, uniformly coating the surface of an aluminum film, baking, and completing exposure by using an electron beam exposure system;
and etching and removing the unexposed aluminum film by adopting wet etching, and removing the photoresist to obtain the band-gap silicon nitride film chip with the round aluminum electrode at the center.
According to some embodiments of the present application, assembling and fixing a first surface of a bandgap silicon nitride film chip with a niobium film side of a superconducting microwave resonator chip includes:
fixing a superconductive microwave resonant cavity chip on a glass slide, wherein one surface of a niobium-containing film faces upwards, and pre-coating fixing glue;
inverting the band gap silicon nitride film chip, aligning the center of the aluminum electrode of the band gap silicon nitride film chip with the center of the superconductive microwave resonant cavity chip, and then adjusting and fixing.
According to some embodiments of the application, the thickness of the double polished silicon wafer is 100-500 μm; the thickness of the silicon nitride film is 50-200nm; the thickness of the aluminum film is 10-50nm.
The thickness of the single polished silicon wafer is 100-500 mu m; the thickness of the niobium film is 50-200nm.
According to some embodiments of the application, the thickness of the double polished silicon wafer is 500 μm; the thickness of the silicon nitride film is 100nm; the thickness of the aluminum film was 20nm.
According to some embodiments of the application, the thickness of the single polished silicon wafer is 500 μm. The thickness of the niobium film was 120nm.
According to some embodiments of the application, the gap silicon nitride film chip is spaced from the superconducting microwave cavity chip by a distance of 100-500nm.
According to another aspect of the application, a quantum signal conversion device prepared by the preparation method is also provided.
Compared with the prior art, the application at least has the following beneficial effects:
The application provides a quantum signal conversion device combining a band gap silicon nitride film and a superconducting microwave resonant cavity for the first time. The coupling of the band gap silicon nitride film and the superconductive microwave resonant cavity can be realized through reasonable chip assembly, so that a brand new superconductive quantum signal converter is formed, and the possibility is provided for the integration of the later-stage superconductive bit and the light path. The converter combines the design of a bandgap structure so that the energy dissipation of the vibration module in the converter is reduced to a very low level.
Drawings
Fig. 1 is an assembly flow diagram of an exemplary embodiment of the present application.
Fig. 2 is a flow chart of the fabrication of a bandgap silicon nitride thin film chip according to an exemplary embodiment of the application.
Fig. 3 is a flow chart of the fabrication of a superconducting microwave cavity chip according to an exemplary embodiment of the present application.
Fig. 4 is a schematic diagram (first surface) of a bandgap silicon nitride thin film chip according to an exemplary embodiment of the application.
Fig. 5 is a schematic diagram of a superconducting microwave cavity chip according to an exemplary embodiment of the present application.
Fig. 6 is an illustration of the icons of fig. 1-3.
Detailed Description
The technical solutions of the present application will be clearly and completely described in conjunction with the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It is particularly pointed out that similar substitutions and modifications to the application will be apparent to those skilled in the art, which are all deemed to be included in the application. It will be apparent to those skilled in the relevant art that variations and modifications can be made in the methods and applications described herein, or in the appropriate variations and combinations, without departing from the spirit and scope of the application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application.
The application is carried out according to the conventional conditions or the conditions suggested by manufacturers if the specific conditions are not noted, and the raw materials or auxiliary materials and the reagents or instruments are conventional products which can be obtained commercially if the manufacturers are not noted.
The present application will be described in detail below.
The application provides a quantum signal conversion device and a preparation method and application thereof. The mixed quantum system combining two information lines of the superconducting microwave resonant cavity and the mechanical vibrator can realize the mutual transmission and conversion between the quantum information carriers from microwaves to photons and realize the advantage complementation among various quantum systems, thereby being capable of further constructing a universal quantum information processor and a quantum network.
The mechanical vibration quantum ground state with high quality factor can be used for realizing long-time storage of the quantum state, in order to improve the quality factor of the film vibrator, the application adopts a band gap structure system (shown in figure 4), and a periodic structure is processed on the film, so that the film is similar to a photonic crystal structure in optics to form a band gap, when the vibration frequency of the vibrator falls in the band gap range, the dissipation of vibration energy can be greatly reduced, and the purposes of dissipation dilution and quality factor improvement are achieved. And coupling an upper chip and a lower chip (the upper chip is a silicon nitride film chip shown in fig. 4, and the lower chip is a superconducting microwave resonant cavity shown in fig. 5) through film metallization and chip flip-chip to obtain the quantum signal conversion device. The device is divided into an upper layer and a lower layer, wherein the upper layer is a silicon nitride film chip with a porous structure, and the lower layer is a superconductive microwave resonant cavity circuit chip.
The technical scheme of the application is further described below by combining specific embodiments.
Examples
Silicon nitride thin film chip preparation (see fig. 2):
(1) Silicon nitride film growth (see fig. 2, step 1-2):
And (3) simultaneously growing a silicon nitride film with the thickness of 100nm on two sides (a first surface and a second surface) of a double polished silicon wafer with the thickness of 500 mu m in the (100) crystal direction by using a Low Pressure Chemical Vapor Deposition (LPCVD) system, wherein the technological parameters are as follows:
a. Three temperature zone temperatures: 800 ℃, 800 ℃;
b. gas flow rate: ammonia (100 sccm), dichlorosilane (25 sccm);
c. Reaction air pressure: 200Pa;
d. Reaction time: and 40min.
(2) Front side pattern exposure and development (see fig. 2, steps 3-4):
Exposure: designing a first surface layout according to the simulation result; spin-coating S1813 photoresist on the surface of the first surface silicon nitride film on the silicon substrate, wherein the spin-coating speed is 3000rpm, and the spin-coating lasts for 60 seconds; baking for 120s on a hot plate at 115 ℃; using a laser direct writing device to complete exposure;
Developing: MF319 developer was used for 60s; after development, the film was baked on a hot plate at 90℃for 120s.
(3) Etching the silicon nitride film on the first surface of the silicon nitride film chip by using a reactive ion etching machine (RIE) (see step 5 of FIG. 2):
Removing photoresist by oxygen: the oxygen flow is 50sccm, the oxygen pressure is 5Pa, the etching power is 50W, and the etching time is 20s;
And (3) etching by mixed gas of trifluoromethane and oxygen: the flow rate of the trifluoromethane is 50sccm, the flow rate of the oxygen is 10sccm, the air pressure is 2Pa, the etching power is 100W, and the etching time is 150s;
after etching, sequentially ultrasonically cleaning with acetone and isopropanol in an ultrasonic cleaning instrument, and removing residual glue.
(4) The second surface is exposed, developed and etched (see steps 6-8 of fig. 2): repeating the steps (2) and (3).
(5) Wet etching (see fig. 2, steps 9-13):
The first surface of the silicon nitride chip after the RIE etching is protected by AR-pc504 glue, the glue homogenizing speed is 2000rpm, the baking is carried out for 120s on a hot plate at the temperature of 60s and 150 ℃; reinforcing the fixation of the AR-pc504 glue and the chip by using a clamp resistant to KOH solution corrosion; 200mL of 40% KOH solution was prepared in a 500mL beaker; placing the prepared KOH solution in a water bath kettle at 80 ℃; after the KOH solution is stable in temperature, the first surface of the silicon nitride chip with the front surface protected is immersed in the solution downwards; and continuously observing the etching progress, taking out the chip from the solution after the etching is finished, removing the clamp, naturally falling the AR-pc504 glue, and cleaning the chip by using deionized water, acetone and isopropanol in sequence.
(6) Silicon nitride film metallization (see fig. 2, steps 14-19):
Exposure: using an electron beam evaporation system to evaporate and grow a 20nm aluminum film on the first surface of the chip, wherein the growth rate is 0.2nm/s; fixing the back of the chip on a slide glass by using MMA (methyl methacrylate) glue, uniformly coating the glue on the surface of an aluminum film, and performing ma-N2410 photoresist at the rotating speed of 4000rpm; baking for 180s on a hot plate at 90 ℃; using an electron beam exposure system to complete exposure;
Wet etching: etching for 20min by using a weakly alkaline ma-D525 developing solution, and completely etching the unexposed part of the aluminum film; and (3) soaking the glass slide by using acetone, removing MMA (methyl methacrylate) glue and ma-N2410 photoresist, and removing the chip to obtain the circular aluminum electrode with the center, and finishing the manufacture of the silicon nitride film chip.
Superconducting microwave resonant cavity chip preparation (see fig. 3):
(1) Niobium film growth (see fig. 3, step 1-2): sputtering and growing a niobium thin with the thickness of 120nm on a single polished silicon wafer with the thickness of 500 mu m in the (100) crystal direction by using a magnetron sputtering system, wherein the technological parameters are as follows:
a. background vacuum, 5e-9Torr;
b. sputtering power, 150W;
c. sputtering time, 660s;
d. Sputtering air pressure: 5e-3Torr.
(2) Cavity pattern exposure and development (see fig. 3, steps 3-4):
Exposure: designing a resonant cavity layout according to the simulation result; using S1813 photoresist, and uniformly stirring at 3000rpm for 60S; baking for 120s on a hot plate at 115 ℃; using a laser direct writing device to complete exposure;
Development, using MF319 developer for 45s; after development, the film was baked on a hot plate at 115℃for 120s.
(3) Etching the niobium film using a Reactive Ion Etcher (RIE) (see step5 of fig. 3):
removing residual glue: the oxygen flow is 50sccm, the oxygen pressure is 5Pa, the etching power is 50W, and the etching time is 20s;
And (3) etching a niobium film: the flow rate of the carbon tetrafluoride is 30sccm, the air pressure of the carbon tetrafluoride is 2Pa, the etching power is 100W, and the etching time is 165s; and after etching, sequentially using acetone and isopropanol in an ultrasonic cleaning instrument to remove residual glue, and completing the manufacture of the superconductive microwave resonant cavity chip.
Chip assembly (fig. 1, steps 1-4):
Fixing a superconducting microwave resonant cavity chip on a glass slide by using trace MMA glue, and placing the chip under a microscope objective; and (3) dripping two drops of AB glue at preset positions of the superconducting microwave resonant cavity chip for adhering with the edge of the silicon nitride film chip.
Inverting the silicon nitride film chip, moving the silicon nitride film chip by using tweezers and a thin glass tube, and aligning the circle center of the circular metallized part of the silicon nitride film with the band gap structure with the circle center of the circular electrode of the lower microwave superconducting resonant cavity. The edge of the silicon nitride film chip is stuck and fixed with the superconductive microwave resonant cavity chip through AB glue;
And (3) adjusting the height of the silicon nitride film chip: the thickness of AB glue is adjusted by pressing the edge of the silicon nitride film chip, and the distance between two layers of chips is controlled to be 100-500 nm; and after the AB glue is dried and shaped, the double-layer chip device is taken down from the glass slide, and the novel superconducting quantum signal conversion device based on the silicon nitride film with the band gap structure is prepared.
The introduction of the band gap structure prepared by the embodiment enables the Q value of the silicon nitride film oscillator to reach more than 10 8, greatly reduces energy dissipation, improves the decoherence time of a system, and is expected to improve the quantum signal conversion (microwave-light conversion) efficiency and simultaneously provides possibility for more other quantum operations.
The above description of the embodiments is only for aiding in the understanding of the method of the present application and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the application can be made without departing from the principles of the application and these modifications and adaptations are intended to be within the scope of the application as defined in the following claims.
Claims (8)
1. The preparation method of the quantum signal conversion device based on the semiconductor film is characterized by comprising the following steps of:
Respectively growing silicon nitride films on the first surface and the second surface of the double polished silicon wafer by adopting a low-pressure chemical vapor deposition system;
exposing, developing and etching the silicon nitride films on the first surface and the second surface respectively;
Coating the etched silicon nitride film on the first surface with a protective adhesive, performing wet etching, and then performing metallization to obtain a band gap silicon nitride film chip;
Growing a niobium film on one surface of a single polished silicon wafer by adopting a magnetron sputtering system;
exposing, developing and etching the niobium film to obtain a superconductive microwave resonant cavity chip;
The first surface of the band gap silicon nitride film chip is contacted with the niobium film surface of the superconducting microwave resonant cavity chip, and the first surface is assembled and fixed to prepare a quantum signal conversion device;
the distance between the first surface of the band gap silicon nitride film chip and the niobium film surface of the superconducting microwave resonant cavity chip is less than 500nm;
wherein the metallizing comprises:
growing an aluminum film on the surface of the silicon nitride film on the first surface by using an electron beam evaporation system;
fixing the second surface on a slide glass, uniformly coating the surface of the aluminum film, baking, and completing exposure by using an electron beam exposure system;
Etching the unexposed aluminum film by adopting wet etching, and removing glue to obtain the band gap silicon nitride film chip with the round aluminum electrode at the center;
The distance between the band gap silicon nitride film chip and the superconductive microwave resonant cavity chip is 100-500nm.
2. The method according to claim 1, wherein the silicon nitride thin films on the first surface and the second surface are etched by a reactive ion etcher in the processes of exposing, developing and etching, respectively;
and etching by adopting mixed gas of trifluoromethane and oxygen in the reactive ion etching machine.
3. The method of claim 1, wherein the wet etching is performed using a KOH solution.
4. The method of claim 3, wherein applying a protective paste to the silicon nitride film on the first surface further comprises using a jig to enhance the securement of the protective paste to the silicon nitride film on the first surface.
5. The method of any one of claims 1-4, wherein assembling and fixing the first surface of the bandgap silicon nitride film chip with the niobium film side of the superconducting microwave cavity chip comprises:
fixing the superconductive microwave resonant cavity chip on a glass slide, wherein one surface containing the niobium film faces upwards, and pre-coating fixing glue;
Inverting the band gap silicon nitride film chip, aligning the center of the aluminum electrode of the band gap silicon nitride film chip with the center of the superconductive microwave resonant cavity chip, and then adjusting and fixing.
6. The method according to claim 5, wherein the double polished silicon wafer has a thickness of 100to 500 μm;
The thickness of the silicon nitride film is 50-200nm; the thickness of the aluminum film is 10-50nm.
7. The method according to claim 5, wherein the thickness of the single polished silicon wafer is 100-500 μm;
the thickness of the niobium film is 50-200nm.
8. A quantum signal conversion device prepared by the preparation method of any one of claims 1-7.
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| CN101276020A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for preparing optical demultiplexer chip of micro-electromechanical system |
| CN113215574A (en) * | 2021-02-01 | 2021-08-06 | 南京大学 | Wet etching method for quantum chip of sapphire substrate aluminum-plated film |
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| WO1991006976A2 (en) * | 1989-11-07 | 1991-05-16 | Department Of The Navy | Process for producing an aluminum oxide layer on various substrates |
| US10355193B2 (en) * | 2017-11-28 | 2019-07-16 | International Business Machines Corporation | Flip chip integration on qubit chips |
| WO2022040967A1 (en) * | 2020-08-26 | 2022-03-03 | 厦门超新芯科技有限公司 | High-resolution in-situ temperature difference chip for transmission electron microscope and manufacturing method therefor |
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| CN101276020A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for preparing optical demultiplexer chip of micro-electromechanical system |
| CN113215574A (en) * | 2021-02-01 | 2021-08-06 | 南京大学 | Wet etching method for quantum chip of sapphire substrate aluminum-plated film |
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