CN118198156A - Detector structure and preparation method thereof - Google Patents
Detector structure and preparation method thereof Download PDFInfo
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- CN118198156A CN118198156A CN202410321734.3A CN202410321734A CN118198156A CN 118198156 A CN118198156 A CN 118198156A CN 202410321734 A CN202410321734 A CN 202410321734A CN 118198156 A CN118198156 A CN 118198156A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 78
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 62
- 229920005591 polysilicon Polymers 0.000 claims abstract description 55
- 229910052732 germanium Inorganic materials 0.000 claims description 58
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000009499 grossing Methods 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 17
- 238000010586 diagram Methods 0.000 description 18
- 238000004891 communication Methods 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a detector structure and a preparation method thereof, wherein the detector structure comprises: the first substrate, the distributed Bragg reflector, the bonding layer and the PIN structure are sequentially stacked; the distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polycrystalline silicon layer away from the first substrate in each laminated structure; the PIN structure comprises a first doping type layer, an intrinsic layer and a second doping type layer which are sequentially stacked, and the second doping type layer is located on one side, far away from the bonding layer, of the intrinsic layer. The invention can improve the response of the device without losing the response speed.
Description
Technical Field
The invention relates to the technical field of detectors, in particular to a detector structure and a preparation method thereof.
Background
The photoelectric detector is a key device in the field of optical fiber communication, and can realize the conversion of data from an optical domain to an electrical domain. With the increasing amount of data transmitted, the performance of photodetectors is in need of improvement. Photodetectors applied to 1550nm and 1310nm bands in the field of high-speed optical fiber communication are required to have excellent characteristics of high responsivity, low dark current and high bandwidth; but the responsivity of the existing detector is low, and the responsivity and the response speed of the vertical incidence detector are mutually restricted.
Disclosure of Invention
The invention provides a detector structure and a preparation method thereof, which have simple structure, can improve the response speed of devices and can not lose the responsivity.
According to an aspect of the present invention, there is provided a detector structure comprising:
The first substrate, the distributed Bragg reflector, the bonding layer and the PIN structure are sequentially stacked;
The distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polycrystalline silicon layer far away from the first substrate in each laminated structure; the PIN structure comprises a first doping type layer, an intrinsic layer and a second doping type layer which are sequentially stacked, wherein the second doping type layer is positioned on one side of the intrinsic layer far away from the bonding layer.
Optionally, the thicknesses of the polysilicon layer and the silicon nitride layer are all as follows:
Wherein d is the thickness of the polysilicon layer or the thickness of the silicon nitride layer, k is an integer greater than or equal to 0, lambda 0 is the wavelength of light waves in free space, and n is the refractive index of the polysilicon layer or the refractive index of the silicon nitride layer; d is the thickness of the polysilicon layer, n is the refractive index of the polysilicon layer; when d is the thickness of the silicon nitride layer, n is the refractive index of the silicon nitride layer.
Optionally, when the first doping type layer is a P-type layer, the second doping type layer is an N-type layer;
When the first doping type layer is an N-type layer, the second doping type layer is a P-type layer;
the P-type layer is a P-type germanium layer, the intrinsic layer is an I-type germanium layer, and the N-type layer is an N-type germanium layer;
optionally, the material of the bonding layer includes one of alumina and tetraethoxysilane;
The material of the silicon nitride layer includes one of Si 3N4、Si2N2 and SiN.
According to another aspect of the present invention, there is provided a method of manufacturing a detector structure, comprising:
Forming a distributed Bragg reflector on one side of the first substrate; the distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polycrystalline silicon layer far away from the first substrate;
forming a germanium buffer layer on one side of the second substrate;
Sequentially forming an intrinsic layer and a first doping type layer on one side of the germanium buffer layer away from the second substrate;
bonding the first doping type layer with the distributed Bragg reflector through a bonding layer;
Removing the second substrate and the germanium buffer layer;
Forming a second doping type layer on a side of the intrinsic layer away from the first doping type layer; the first doping type layer, the intrinsic layer and the second doping type layer are PIN structures.
Optionally, forming a distributed bragg reflector on one side of the first substrate includes:
Forming a plurality of stacked structures on one side of a first substrate; forming a plurality of stacked structures on one side of a first substrate, comprising:
Sequentially forming a polysilicon layer and a silicon nitride layer on one side of a first substrate;
annealing the silicon nitride layer; and repeatedly forming a polysilicon layer and a silicon nitride layer, and performing annealing treatment after forming the silicon nitride layer each time to form a plurality of laminated structures.
Optionally, removing the second substrate and the germanium buffer layer includes:
And removing the second substrate and the germanium buffer layer through a polishing process, wet etching, dry etching or chemical mechanical polishing.
Optionally, bonding the first doping type layer to the distributed bragg reflector through a bonding layer includes:
forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector;
And carrying out heat treatment on the bonding sub-layer to form the bonding layer.
Optionally, forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed bragg mirror includes:
and forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector through a sputtering process, a plasma enhanced chemical vapor deposition process or a low-pressure chemical vapor deposition process.
Optionally, the bonding sub-layer is subjected to heat treatment, and before forming the bonding layer, the method further comprises:
and smoothing the surface of the bonding sub-layer.
The detector structure provided by the technical scheme of the embodiment of the invention comprises: the first substrate, the distributed Bragg reflector, the bonding layer and the PIN structure are sequentially stacked; the distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polycrystalline silicon layer far away from the first substrate in each laminated structure; the PIN structure comprises a first doping type layer, an intrinsic layer and a second doping type layer which are sequentially stacked, wherein the second doping type layer is positioned on one side of the intrinsic layer far away from the bonding layer. The refractive index difference between the polysilicon layer and the silicon nitride layer is larger, the reflection efficiency of the formed distributed Bragg reflector is high, the reflectivity of light rays in the device can be remarkably improved in the distributed Bragg reflector, incident light is fully absorbed after being transmitted for many times, light leakage is avoided, the optical responsivity of the device can be greatly improved, the response speed of the device is not influenced, the problem that the responsivity and the response speed of a main stream device are mutually restricted is solved, and the structure is simple.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a detector according to a first embodiment of the present invention.
Fig. 2 is a flowchart of a method for manufacturing a detector according to a second embodiment of the present invention.
Fig. 3 is a schematic diagram of an intermediate structure of a detector according to a second embodiment of the present invention.
Fig. 4 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 5 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 6 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 7 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 8 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 9 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 10 is a detailed flow chart of a method of manufacturing one of the probes in S110 of fig. 2.
Fig. 11 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 12 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 13 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Fig. 14 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like herein are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1
An embodiment of the present invention provides a detector structure, and fig. 1 is a schematic structural diagram of a detector provided in a first embodiment of the present invention, and referring to fig. 1, the detector structure includes:
The first substrate 11, the distributed bragg mirror 20, the bonding layer 30 and the PIN structure 40 are sequentially stacked; wherein the distributed bragg reflector 20 comprises a plurality of laminated structures 21, each laminated structure comprises a polysilicon layer 22 and a silicon nitride layer 23 which are laminated in sequence; the silicon nitride layer 23 in each of the stacked structures 21 is located on a side of the polysilicon layer 22 away from the first substrate 11; the PIN structure 40 comprises a first doping type layer 42, an intrinsic layer 41 and a second doping type layer 43, which are arranged in a stacked order, the second doping type layer being located on the side of the intrinsic layer remote from the bonding layer.
The detector structure can be a vertical incidence type PIN detector, and the PIN detector can be a silicon-based germanium detector. The first substrate 11 may be a silicon (Si) substrate or a substrate of other materials; for example, if the substrate is a Si substrate, when the Si-based Ge detector is fabricated, the germanium material and the silicon material are in group IV and compatible with the CMOS process, and the cut-off wavelength is 1550nm, which can cover the optical fiber communication band, and since there is a lattice mismatch of about 4.18% between the germanium material and the silicon material, an epitaxial germanium layer with almost no dislocation can be obtained using the germanium (Germanium On Insulator, GOI) substrate on the insulating layer, thereby fabricating a high quality Si-based Ge detector. The material of the bonding layer 30 may be a thin aluminum oxide layer or a thin Tetraethoxysilane (TEOS) layer.
The PIN structure 40 may form a PIN detector, which is a photovoltaic device, and has a simple structure and is the detector structure currently mainstream. In the vertical incidence PIN detector, the intrinsic layer 41 serves as an absorption layer and is responsible for absorbing most of incident light, but the thickness of the intrinsic layer 41 determines the responsivity of the device and is related to the transit time of photogenerated carriers, which causes a problem that the responsivity and the response speed of the detector are mutually restricted. When the light absorption coefficient of the material is unchanged, the thicker the intrinsic layer thickness is, the higher the response rate of the device is, but at the same time, the longer the transit time of the photogenerated carriers is. Conversely, increasing the device response speed requires decreasing the intrinsic layer thickness, which in turn leads to a decrease in device responsiveness. According to the embodiment of the invention, the distributed Bragg reflector 20 is introduced into the detector, reflection is formed by utilizing the difference of refractive indexes of the polysilicon layer 22 and the silicon nitride layer 23 which are laminated on the vertical interface, so that incident light is fully absorbed after being transmitted for many times in the intrinsic layer 41, the response speed is increased by thinning the thickness of the intrinsic layer, and meanwhile, the responsivity is not lost, and the structure is simple.
The distributed bragg reflector 20 comprises a plurality of laminated structures 21, each laminated structure comprises a polysilicon layer 22 and a silicon nitride layer 23 which are sequentially laminated, the polysilicon layer 22 is formed firstly, the silicon nitride layer 23 is formed after the polysilicon layer 22 is formed, polysilicon materials adopted by the polysilicon layer 22 and silicon nitride materials adopted by the silicon nitride layer 23 are easy to obtain and grow simply and conveniently, the film density, dielectric constant and thermal expansion coefficient of the silicon nitride layer are high, the silicon nitride layer has large tensile stress, the bonding force of the subsequent bonding layer 30 can be improved through an annealing step, and meanwhile, the bonding process can introduce strain into a germanium layer in the germanium detector, so that the detection efficiency is improved. The refractive index difference between the polysilicon layer 22 and the silicon nitride layer 23 is larger, and the reflection efficiency of the formed distributed Bragg reflector 20 is high, so that the reflectivity of light rays in the device can be remarkably improved in the distributed Bragg reflector 20, incident light is fully absorbed after multiple propagation and light leakage is avoided, the optical responsivity of the device can be greatly improved, the response speed of the device is not influenced, and the problem that the responsivity and the response speed of a main stream device are mutually restricted can be solved.
The detector structure provided by the technical scheme of the embodiment of the invention comprises: the first substrate 11, the distributed bragg mirror 20, the bonding layer 30 and the PIN structure 40 are sequentially stacked; wherein the distributed bragg reflector 20 comprises a plurality of laminated structures 21, each laminated structure comprises a polysilicon layer 22 and a silicon nitride layer 23 which are laminated in sequence; the silicon nitride layer 23 in each of the stacked structures 21 is located on a side of the polysilicon layer 22 away from the first substrate 11; the PIN structure 40 comprises a first doping type layer 42, an intrinsic layer 41 and a second doping type layer 43, which are arranged in a stacked order, the second doping type layer being located on the side of the intrinsic layer remote from the bonding layer. In the embodiment of the invention, the refractive index difference between the polysilicon layer 22 and the silicon nitride layer 23 is larger, the reflection efficiency of the formed distributed Bragg reflector 20 is high, and the reflectivity of light rays in the device can be obviously improved in the distributed Bragg reflector 20, so that incident light is fully absorbed after multiple propagation and light leakage is avoided, the optical responsivity of the device can be greatly improved, the response speed of the device is not influenced, the problem that the responsivity and the response speed of a main stream device are mutually restricted can be solved, and the structure is simple.
Optionally, the thicknesses of the polysilicon layer and the silicon nitride layer are all as follows:
Wherein d is the thickness of the polysilicon layer or the thickness of the silicon nitride layer, k is an integer greater than or equal to 0, lambda 0 is the wavelength of light waves in free space, and n is the refractive index of the polysilicon layer or the refractive index of the silicon nitride layer; d is the thickness of the polysilicon layer, n is the refractive index of the polysilicon layer; when d is the thickness of the silicon nitride layer, n is the refractive index of the silicon nitride layer.
In the multiple laminated structures, the thicknesses of the multiple polysilicon layers are the same, and the thicknesses of the multiple silicon nitride layers are the same. The thickness of the polysilicon layer and the silicon nitride layer can be changed according to the wavelength of the incident light wave, especially the growth thickness of the silicon oxide layer and the silicon nitride layer corresponding to the optical fiber communication wavelength 1310nm and 1550nm, the absorption rate of the detector to light with specific wavelength can be improved by designing the lamination thickness of the polysilicon layer and the silicon nitride layer, and meanwhile, the growth film thickness of the polysilicon layer and the silicon nitride layer is easy to control, and the bonding power in the later stage can be improved.
Optionally, when the first doping type layer is a P-type layer, the second doping type layer is an N-type layer; when the first doping type layer is an N-type layer, the second doping type layer is a P-type layer; the P-type layer is a P-type germanium layer, the intrinsic layer is an I-type germanium layer, and the N-type layer is an N-type germanium layer.
The P-type germanium layer, the I-type germanium layer and the N-type germanium layer can form a germanium PIN detector, the PIN structure is a three-layer structure device formed by sandwiching an intrinsic layer between a heavily doped P-type layer and an N-type layer, and the responsivity and the response speed of the device can be regulated and controlled by controlling the thickness of the I-type germanium layer.
Optionally, the material of the bonding layer includes one of alumina and tetraethoxysilane; the material of the silicon nitride layer includes one of Si 3N4、Si2N2 and SiN.
Wherein the process of the aluminum oxide and tetraethoxysilane materials is simple and mature, the material of the silicon nitride layer comprises one of Si 3N4、Si2N2 and SiN, which is only an example, and the ratio of nitrogen to silicon in the silicon nitride layer is not limited in the embodiment of the invention.
Example two
Fig. 2 is a flowchart of a method for manufacturing a detector according to a second embodiment of the present invention, and referring to fig. 2, the method for manufacturing a detector includes:
s110, forming a distributed Bragg reflector on one side of a first substrate; the distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polysilicon layer away from the first substrate.
Wherein the material of the silicon nitride layer comprises one of Si 3N4、Si2N2 and SiN. The thicknesses of the polysilicon layer and the silicon nitride layer are all as follows:
Wherein d is the thickness of the polysilicon layer or the thickness of the silicon nitride layer, k is an integer greater than or equal to 0, lambda 0 is the wavelength of light waves in free space, and n is the refractive index of the polysilicon layer or the refractive index of the silicon nitride layer; d is the thickness of the polysilicon layer, n is the refractive index of the polysilicon layer; when d is the thickness of the silicon nitride layer, n is the refractive index of the silicon nitride layer. Fig. 3 is a schematic diagram of an intermediate structure of a detector according to a second embodiment of the present invention, and referring to fig. 3, a distributed bragg reflector 20 may be formed on one side of a first substrate 11 through a deposition process. Deposition processes include, but are not limited to, sputtering, plasma Enhanced Chemical Vapor Deposition (PECVD), low Pressure Chemical Vapor Deposition (LPCVD), and the like.
And S120, forming a germanium buffer layer on one side of the second substrate.
Wherein the second substrate may be a silicon substrate or a substrate of other materials; fig. 4 is a schematic diagram of an intermediate structure of another detector according to the second embodiment of the present invention, referring to fig. 4, a germanium buffer layer 13 is formed on one side of a second substrate 12, where the germanium buffer layer 13 may be a low Wen Zhe + Gao Wenzhe buffer layer or a graded silicon germanium buffer layer, and the germanium buffer layer 13 may avoid lattice mismatch during subsequent PIN structure formation, so as to improve device performance.
And S130, forming an intrinsic layer and a first doping type layer on one side of the germanium buffer layer away from the second substrate.
Fig. 5 to fig. 6 are schematic views showing an intermediate structure of a further detector according to the second embodiment of the present invention, referring to fig. 5, an intrinsic layer 41 may be formed on a side of the germanium buffer layer 13 away from the second substrate 12 by a Reduced Pressure Chemical Vapor Deposition (RPCVD) process, and a first doping type layer 42 may be formed on a side of the intrinsic layer 41 away from the germanium buffer layer 13, where the first doping type layer 42 may be formed by an RPCVD process, or may be other conventional processes, and the doping method is not limited.
And S140, bonding the first doping type layer and the distributed Bragg reflector through a bonding layer.
Fig. 7 is a schematic diagram of an intermediate structure of a further detector according to the second embodiment of the present invention, referring to fig. 7, a first doping type layer 41 is bonded to a distributed bragg mirror 20 through a bonding layer 30, and the bonding layer 30 may be deposited on at least one surface of the first doping type layer 41 and the distributed bragg mirror 20.
And S150, removing the second substrate and the germanium buffer layer.
Fig. 8-9 are schematic views of an intermediate structure of a further probe according to the second embodiment of the present invention, and referring to fig. 8 and 9, the second substrate 12 is removed by polishing, wet etching, dry etching or chemical mechanical polishing to form the structure of fig. 8, and the germanium buffer layer 13 is removed by wet etching or dry etching to form the structure of fig. 9.
S160, forming a second doping type layer on one side of the intrinsic layer far away from the first doping type layer; the first doping type layer, the intrinsic layer and the second doping type layer are PIN structures.
When the first doping type layer is a P type layer, the second doping type layer is an N type layer; when the first doping type layer is an N-type layer, the second doping type layer is a P-type layer; the P-type layer is a P-type germanium layer, the intrinsic layer is an I-type germanium layer, and the N-type layer is an N-type germanium layer; the doping method of the P-type layer is not limited, and doping atoms include, but are not limited to, boron, gallium and the like; the doping method of the N-type layer is not limited, and multiple ion implantations can be used, and doping atoms include, but are not limited to, phosphorus, arsenic, and the like.
The refractive index difference between the polysilicon layer and the silicon nitride layer in the preparation method of the detector structure provided by the embodiment of the invention is large, the reflection efficiency of the formed distributed Bragg reflector is high, and the reflectivity of light in the device can be obviously improved in the distributed Bragg reflector, so that incident light is fully absorbed after multiple propagation without light leakage, the optical responsivity of the device can be greatly improved, the response speed of the device is not influenced, and the problem that the responsivity and the response speed of a main stream device are mutually restricted can be solved.
Optionally, forming a distributed bragg reflector on one side of the first substrate includes:
forming a plurality of stacked structures on one side of a first substrate; fig. 10 is a detailed flowchart of a method for manufacturing a detector in S110 in fig. 2, where the manufacturing method includes:
and S111, sequentially forming a polysilicon layer and a silicon nitride layer on one side of the first substrate.
Fig. 11-12 are schematic views showing an intermediate structure of a further probe according to the second embodiment of the present invention, referring to fig. 11-12, a polysilicon layer 22 is formed on one side of the first substrate 11 through a sputtering process, a plasma enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process, and a silicon nitride layer is formed on one side of the polysilicon layer 22 away from the first substrate 11 through a sputtering process, a plasma enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process.
And S112, annealing the silicon nitride layer.
Wherein, annealing can enhance the bonding force in the later bonding process, thereby improving the bonding power.
S113, repeatedly forming a polysilicon layer and a silicon nitride layer, and performing annealing treatment after forming the silicon nitride layer each time to form a plurality of laminated structures.
Wherein, referring to fig. 3, fig. 3 illustrates three stacked structures. And annealing is performed after each silicon nitride layer is formed, so that a plurality of laminated structures are formed, and after each silicon nitride layer is annealed, the bonding force in the later bonding process can be enhanced, so that the bonding power is improved.
Optionally, removing the second substrate and the germanium buffer layer includes: and removing the second substrate and the germanium buffer layer through a polishing process, wet etching, dry etching or chemical mechanical polishing.
Wherein, the polishing process, wet etching, dry etching or chemical mechanical polishing and other processes are mature and easy to operate.
Optionally, bonding the first doping type layer to the distributed bragg reflector through a bonding layer includes: forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector; and carrying out heat treatment on the bonding sub-layer to form the bonding layer.
In which the material of the bonding layer includes one of alumina and tetraethoxysilane, fig. 13 is a schematic diagram showing an intermediate structure of another probe according to the second embodiment of the present invention, referring to fig. 13, a bonding sub-layer 31 is formed on a surface of the bragg reflector 20 away from the first substrate 11, and the bonding sub-layer 31 may be formed by a sputtering process, a plasma enhanced chemical vapor deposition process or a low pressure chemical vapor deposition process, and then formed by a thermal treatment. Or fig. 14 is a schematic diagram showing an intermediate structure of a further probe according to the second embodiment of the present invention, and referring to fig. 14, a bonding sub-layer is formed on a surface of the first doping type layer away from the second substrate 12, and then the bonding layer is formed by heat treatment. Alternatively, the bonding sub-layer may be formed on the surfaces of the first doping type layer and the distributed bragg mirror, respectively, and then the bonding layer may be formed by a heat treatment. If the PIN structure comprises a P-type germanium layer, an I-type germanium layer and an N-type germanium layer, removing high-defect germanium and simultaneously obtaining a strain germanium layer through a bonding process, changing the growth thickness of the germanium layer and improving the strain value of the germanium layer in a bonding mode; by adopting the silicon nitride material with large tensile strain, germanium strain can be introduced in the bonding process, and the strain value can be further improved in the annealing process after bonding, so that the performance of the device is improved.
Optionally, forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed bragg mirror includes: and forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector through a sputtering process, a plasma enhanced chemical vapor deposition process or a low-pressure chemical vapor deposition process.
Wherein, the sputtering process, the plasma enhanced chemical vapor deposition process or the low-pressure chemical vapor deposition process is simple and easy to operate.
Optionally, the bonding sub-layer is subjected to heat treatment, and before forming the bonding layer, the method further comprises: and smoothing the surface of the bonding sub-layer.
Among them, the smoothing method is not limited, and Chemical Mechanical Polishing (CMP) or the like may be employed.
In the embodiment of the invention, if the detector structure is a germanium detector, the polycrystalline silicon/silicon nitride multi-laminated GOI substrate germanium detector can improve the absorptivity of the detector to incident light by means of a distributed Bragg reflector, and meanwhile, the strain of a germanium layer is introduced, so that the responsivity of the device in 1550nm and 1310nm optical fiber communication windows is improved. Compared with the traditional germanium detector, the performance of the GOI substrate detector based on the polycrystalline silicon/silicon nitride multi-stack is obviously improved, and the preparation process of the device is simple and feasible. The detector structure and the preparation method provided by the invention are realized to help promote the development of optical fiber communication technology, and have great research significance and economic benefit.
The preparation method of the detector provided by the technical scheme of the embodiment of the invention has the same beneficial effects as the detector structure provided by any embodiment of the invention.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps described in the present invention may be performed in parallel, sequentially, or in a different order, so long as the desired results of the technical solution of the present invention are achieved, and the present invention is not limited herein.
The above embodiments do not limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications, combinations, sub-combinations and alternatives are possible, depending on design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of the present invention.
Claims (10)
1. A detector structure, comprising:
The first substrate, the distributed Bragg reflector, the bonding layer and the PIN structure are sequentially stacked;
The distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polycrystalline silicon layer away from the first substrate in each laminated structure; the PIN structure comprises a first doping type layer, an intrinsic layer and a second doping type layer which are sequentially stacked, and the second doping type layer is located on one side, far away from the bonding layer, of the intrinsic layer.
2. The detector structure of claim 1, wherein the thicknesses of the polysilicon layer and the silicon nitride layer each satisfy:
Wherein d is the thickness of the polysilicon layer or the thickness of the silicon nitride layer, k is an integer greater than or equal to 0, lambda 0 is the wavelength of light waves in free space, and n is the refractive index of the polysilicon layer or the refractive index of the silicon nitride layer; d is the thickness of the polysilicon layer, n is the refractive index of the polysilicon layer; when d is the thickness of the silicon nitride layer, n is the refractive index of the silicon nitride layer.
3. The detector structure according to claim 1, characterized in that:
when the first doping type layer is a P-type layer, the second doping type layer is an N-type layer;
when the first doping type layer is an N-type layer, the second doping type layer is a P-type layer;
The P-type layer is a P-type germanium layer, the intrinsic layer is an I-type germanium layer, and the N-type layer is an N-type germanium layer.
4. The detector structure according to claim 1, characterized in that:
the material of the bonding layer comprises one of aluminum oxide and tetraethoxysilane;
The material of the silicon nitride layer comprises one of Si 3N4、Si2N2 and SiN.
5. A method of manufacturing a detector structure, comprising:
forming a distributed Bragg reflector on one side of the first substrate; the distributed Bragg reflector comprises a plurality of laminated structures, wherein each laminated structure comprises a polysilicon layer and a silicon nitride layer which are sequentially laminated; the silicon nitride layer is positioned on one side of the polysilicon layer away from the first substrate;
forming a germanium buffer layer on one side of the second substrate;
Sequentially forming an intrinsic layer and a first doping type layer on one side of the germanium buffer layer away from the second substrate;
bonding the first doping type layer with the distributed Bragg reflector through a bonding layer;
removing the second substrate and the germanium buffer layer;
Forming a second doping type layer on a side of the intrinsic layer away from the first doping type layer; the first doping type layer, the intrinsic layer and the second doping type layer are PIN structures.
6. The method of fabricating a detector structure according to claim 5, wherein forming a distributed bragg mirror on one side of the first substrate comprises:
Forming a plurality of stacked structures on one side of a first substrate; forming a plurality of stacked structures on one side of a first substrate, comprising:
Sequentially forming a polysilicon layer and a silicon nitride layer on one side of a first substrate;
annealing the silicon nitride layer; and repeatedly forming the polysilicon layer and the silicon nitride layer, and performing annealing treatment after forming the silicon nitride layer each time to form a plurality of laminated structures.
7. The method of fabricating a detector structure according to claim 5, wherein removing the second substrate and the germanium buffer layer comprises:
And removing the second substrate and the germanium buffer layer through a polishing process, wet etching, dry etching or chemical mechanical polishing.
8. The method of fabricating a detector structure according to claim 5, wherein bonding the first doping type layer to the distributed bragg reflector through a bonding layer comprises:
Forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector;
and carrying out heat treatment on the bonding sub-layer to form a bonding layer.
9. The method of fabricating a detector structure according to claim 8, wherein forming a bonding sub-layer on at least one of the first doping type layer and the distributed bragg reflector comprises:
And forming a bonding sub-layer on at least one surface of the first doping type layer and the distributed Bragg reflector through a sputtering process, a plasma enhanced chemical vapor deposition process or a low-pressure chemical vapor deposition process.
10. The method of fabricating a detector structure according to claim 8, wherein the thermally treating the bonding sub-layer to form the bonding layer further comprises:
and smoothing the surface of the bonding sub-layer.
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