CN118197969B - Thermal table and semiconductor processing apparatus using the same - Google Patents
Thermal table and semiconductor processing apparatus using the same Download PDFInfo
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- CN118197969B CN118197969B CN202410594214.XA CN202410594214A CN118197969B CN 118197969 B CN118197969 B CN 118197969B CN 202410594214 A CN202410594214 A CN 202410594214A CN 118197969 B CN118197969 B CN 118197969B
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- 238000012545 processing Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 238000002791 soaking Methods 0.000 claims abstract description 27
- 239000007787 solid Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000004804 winding Methods 0.000 abstract description 9
- 230000008602 contraction Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application discloses a heat table and semiconductor processing equipment applied to the heat table, and relates to the technical field of semiconductor manufacturing, wherein the heat table comprises: a support body formed around a central axis, the central position being provided with a cylindrical structure body in which heating elements are arranged; the bearing seat is coaxially arranged on the supporting body, the top surface forms a wafer bearing surface, and a soaking structure for uniformly conducting heat output by the heating element to the wafer bearing surface is arranged in the bearing seat. The heating element is designed to be in a coaxial structure in the support body, and the soaking structure matched with the bearing seat uniformly conducts the heat of the heating element to the wafer. Therefore, the resistor wire winding pattern of the heating element does not need to be complicated, the processing and the manufacturing are convenient, and the heating element is changed into a simple geometric structure, so that the problem of local damage is not easy to occur under the conditions of thermal expansion and cold contraction.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a heat table and semiconductor processing equipment applied to the heat table.
Background
In semiconductor manufacturing, it is necessary to heat and keep the wafer warm in a vacuum environment, and this is usually achieved by a heat stage (Heater), and it is required that the temperature be uniform. Specifically, the heat table is arranged in the vacuum reaction cavity, and the top surface bears the wafer.
However, in the related art, the heat stage has complicated structure and high manufacturing difficulty, and is generally composed of a heat stage body, a heating body and a temperature sensor. The temperature uniformity is realized by the distribution of the heating elements, so the shape of the heating elements is generally complex.
Referring to fig. 1 and 2, fig. 1 shows a schematic perspective structure of a front view of a related art heat stage. Fig. 2 shows a schematic sectional view of the P-P direction of the heat stage of fig. 1.
As can be seen from fig. 1, the body of the first heat stage 100 can be divided into an outer portion 101 exposed outside the reaction chamber, and an inner portion 102 with a top surface located inside the chamber. The top surface of the inner portion 102 is a carrying surface for carrying the wafer 200. The inner portion 102 has a first heat generator 103 disposed therein. As shown in fig. 2, a schematic cross-sectional view of the P-P direction of fig. 1 is shown. The first heating body 103 is formed by winding a resistance wire, and the cross section of the first heating body is in a winding pattern. The turning radius of the first heat generator 103 is related to the resistance wire diameter. The body may be made of a metal material having high heat conductivity, such as aluminum alloy, etc., and supports the first heat generator 103 and insulates the inside and outside of the reaction chamber, thereby conducting heat of the first heat generator 103 to the wafer.
On the one hand, the first heating element 103 with the cross section in the wound pattern has a complex structure and relatively high processing difficulty. On the other hand, in general, the thermal expansion of the resistance wire of the first heating element 103 is inconsistent due to the different materials of the body of the first heating table 100, and the stress generated at different parts of the first heating element 103 distributed in a complex pattern will have a certain probability to cause the deformation of the first heating table 100 and the resistance wire during the temperature rising and reducing, so that the resistance wire is more easily damaged.
Disclosure of Invention
In view of the above-described drawbacks of the prior art, an object of the present application is to provide a heating table and a semiconductor processing apparatus applied thereto, which solve the problems in the related art.
A first aspect of the present application provides a thermal block comprising: a support body formed around a central axis, the central position being provided with a cylindrical structure body in which heating elements are arranged; the bearing seat is coaxially arranged on the supporting body, the top surface forms a wafer bearing surface, and a soaking structure for uniformly conducting heat output by the heating element to the wafer bearing surface is arranged in the bearing seat.
In an embodiment of the first aspect, the soaking structure comprises at least one heat conducting layer arranged in an up-down direction; each heat conducting layer is provided with at least one cavity; and the solid parts outside the hollow cavity of the soaking structure form heat conduction paths which are divergent from bottom to top in the bearing seat.
In an embodiment of the first aspect, the at least one cavity is configured as a disc-shaped or ring-shaped structure coaxial with the carrier to define at least one ring-shaped or disc-shaped thermally conductive portion in each thermally conductive layer in the solid portion.
In an embodiment of the first aspect, the at least one cavity is configured as a disc-shaped or ring-shaped structure coaxial with the carrier.
In an embodiment of the first aspect, the soaking structure exhibits an increased number of thermally conductive portions comprised by the thermally conductive layer in a bottom-up direction.
In an embodiment of the first aspect, the dimensions of the cavities in each heat conducting layer determine the cross-sectional area and the length of the heat conducting portion in each heat conducting path, which are iterated and determined by the heat conducting model based on the temperature equalization of the upper surface of the carrying surface as constraints, the length of the heat conducting path being inversely related to the temperature magnitude of the position where it arrives at the wafer carrying surface, the cross-sectional area of the heat conducting path being positively related to the temperature magnitude of the position where it arrives at the wafer carrying surface.
In an embodiment of the first aspect, the cross-sectional area of the heat conducting portion in each heat conducting layer is smaller as it is closer to the central axis.
In an embodiment of the first aspect, the at least one heat conducting layer includes a first heat conducting layer and a second heat conducting layer sequentially distributed from bottom to top; the first heat conductive layer includes: the bearing seat comprises a first cavity, a second cavity and a first heat conduction part, wherein the first cavity is coaxial with the bearing seat, the second cavity is arranged around the first cavity and extends to the side edge of the bearing seat, and the first heat conduction part is formed between the first cavity and the second cavity; the second heat conductive layer includes: a third cavity coaxial with the bearing seat, a fourth cavity surrounding the third cavity, a fifth cavity surrounding the fourth cavity and extending to the side edge of the bearing seat, a second heat conduction part formed between the third cavity and the fourth cavity, and a third heat conduction part formed between the fourth cavity and the fifth cavity; wherein the first heat conduction part, the second heat conduction part and the third heat conduction part are communicated; the first heat conduction part is positioned in the up-down direction and corresponds to the fourth cavity.
In an embodiment of the first aspect, the at least one thermally conductive layer further comprises a third thermally conductive layer on the second thermally conductive layer; the third heat conductive layer includes: an annular sixth cavity; a seventh cavity disposed around the sixth cavity; the inner hole of the sixth cavity is provided with a disk-shaped fourth heat conduction part, and the fourth heat conduction part is coaxial with the bearing seat; an annular fifth heat conduction part is formed between the sixth cavity and the seventh cavity, and the position of the fifth heat conduction part in the up-down direction corresponds to the fourth cavity; a sixth heat conduction part is formed between the seventh cavity and the side edge of the bearing seat; the third heat conduction part corresponds to the seventh cavity in position in the up-down direction; the fourth heat conduction part and the fifth heat conduction part are communicated with the third heat conduction part and the second heat conduction part.
A second aspect of the present application provides a semiconductor processing apparatus comprising: a reaction chamber; a thermal block according to any one of the first aspects, disposed in the reaction chamber.
As described above, the present application discloses a heat stage and a semiconductor processing apparatus using the same, and relates to the technical field of semiconductor manufacturing, where the heat stage includes: a support body formed around a central axis, the central position being provided with a cylindrical structure body in which heating elements are arranged; the bearing seat is coaxially arranged on the supporting body, the top surface forms a wafer bearing surface, and a soaking structure for uniformly conducting heat output by the heating element to the wafer bearing surface is arranged in the bearing seat. The heating element is designed to be in a coaxial structure in the support body, and the soaking structure matched with the bearing seat uniformly conducts the heat of the heating element to the wafer. Therefore, the resistor wire winding pattern of the heating element does not need to be complicated, the processing and the manufacturing are convenient, and the heating element is changed into a simple geometric structure, so that the problem of local damage is not easy to occur under the conditions of thermal expansion and cold contraction.
Drawings
Fig. 1 shows a schematic perspective structure view of a front view of a first heat stage in the related art.
Fig. 2 shows a schematic sectional view of the P-P direction of the heat stage of fig. 1.
FIG. 3 shows a schematic perspective view of a second heat stage from a front perspective in an embodiment of the application.
Fig. 4 shows a schematic cross-sectional structure in the direction A-A in fig. 3.
Fig. 5 shows a schematic cross-sectional structure in the direction B-B in fig. 3.
Fig. 6 shows a schematic cross-sectional structure in the C-C direction in fig. 3.
Fig. 7 shows a schematic perspective view of a third heat stage in a further embodiment of the application.
Fig. 8 shows a schematic cross-sectional structure in the D-D direction in fig. 7.
Detailed Description
In the related art, the heating element of the heat table is usually located in the bearing seat at the inner side of the reaction cavity, and for the purpose of uniformly heating, the heating element is arranged in a relatively complex pattern by winding resistance wires, for example, a winding pattern in fig. 2. However, on one hand, the processing difficulty of the heating element with the complex pattern is high, and on the other hand, the heating element with the complex pattern is easy to deform at some parts of the heat table or the resistance wire under the stress effect when the temperature is increased and decreased, so that the bad effect of damage of the heat table and the resistance wire is caused.
In view of this, the embodiment of the application provides a heat table, which solves the problems in the related art by changing the position and structure of the heating element and matching with the design of the soaking structure. To distinguish from the related art, the heat stage in the following embodiments of the present application is referred to as a "second heat stage" or a "third heat stage".
As shown in fig. 3, a perspective schematic view of a second heat stage in front view is shown in an embodiment of the present application.
In fig. 3, the body of the second heat stage 300 is shown to include a support 301 and a load bearing seat 302. The support 301 is formed around a central axis. As an example, the supporting body 301 may have a cylindrical structure, and a cross section thereof may have a central symmetrical shape. In a further example, the support 301 may be a cylindrical structure. A cylindrical structure 303 is disposed at a central position in the support 301. The cylindrical structure 303 may be arranged with a heating element (not shown). In some embodiments, the heating element is cylindrical or tubular, such as an industrial heating tube of the electric heating principle, or the like. In still other embodiments, the heating element may also be a pattern of resistive wire windings.
Unlike the related art, the cylindrical structure 303 including the heating element is not disposed in the carrier 302, but disposed in the support 301 at a central position of the support 301, so that heat generated therefrom is dispersed and conducted from the center along the carrier 302. As is clear from comparison with the related art, the heating element provided in the columnar structure 303 is only required to be provided in the central position of the second heat stage 300, and is small in size and small in occupied area. In contrast, since the inner portion 102 of the first heat stage 100 directly carrying the wafer is provided, the distance between the first heat generator 103 and the wafer for conducting heat is small, and the wafer is uniformly heated, so that the wound pattern of the resistance wire of the first heat generator 103 in fig. 1 needs to cover almost the entire cross section of the first heat stage 100, and the size and area are large, so that there is a high risk that the first heat generator 103 in the related art is deformed and damaged due to the inconsistent thermal expansion with the first heat stage 100. The heating element in the cylindrical structure body is small in size, so that the deformation caused by thermal expansion can be greatly reduced, and the damage risk is greatly reduced.
As shown in fig. 4, a schematic cross-sectional structure in the A-A direction in fig. 3 is shown. In fig. 4, it is shown that the cylindrical structure 303 may be a cylindrical body coaxial with the support 301, and preferably, both the cylindrical structure 303 and the support 301 may be cylindrical structures to facilitate uniform heat dissipation to the surroundings.
In some embodiments, the heating element in the cylindrical structure 303 may be heated by a heating wire, a heating rod or a liquid, which is only required to ensure uniform temperature in the circumferential direction of the middle cylinder.
In some embodiments, the body may be made of a material with high heat conductivity, such as aluminum alloy, to support the crystal source in the reaction chamber and isolate the reaction chamber from the outside, and the reaction chamber is kept in a vacuum state. Specifically, the carrier 302 is hermetically connected to the reaction chamber, the wafer carrying surface is located inside the reaction chamber, and the supporting body 301 is located outside the reaction chamber.
The carrier 302 is coaxially disposed on the support 301, and a top surface forms a wafer carrying surface for carrying the wafer 200. As an example, the cross section of the bearing seat 302 may also be a centrosymmetric shape, preferably a circular shape, i.e. the bearing seat 302 may be a cylindrical structure. In order to uniformly guide the heat generated by the columnar structure 303 to the wafer carrying surface, a soaking structure 321 for uniformly conducting the heat output by the heating element to the wafer carrying surface is disposed inside the carrying seat 302.
As illustrated in fig. 3, the soaking structure 321 includes at least one heat conductive layer disposed in an up-down direction. Wherein each of the thermally conductive layers is configured with at least one cavity. Solid portions outside the hollow cavity of the soaking structure 321 form respective heat conduction paths in the carrier 302 that diverge from bottom to top. Since the cavity portion is not or only slightly conductive, the thermal insulation is good and low cost, limiting heat transfer from the cavity to the upper layer of the second heat block 300 and primarily from the solid portion. The heat conduction path with the required shape and trend is planned by setting the size, the interval and the like of the cavity, so that the purpose of uniform heat conduction is achieved. Optionally, the effect of uniform heat conduction can be improved by arranging a plurality of heat conduction bottom layers.
Illustratively, the at least one thermally conductive layer is shown in fig. 3 to include a first thermally conductive layer 3211 and a second thermally conductive layer 3212 distributed sequentially from bottom to top. Each heat conducting layer (for example, the first heat conducting layer 3211 and the second heat conducting layer 3212) performs certain homogenization on the heat sent in from the lower part and outputs the homogenized heat to the next heat conducting layer at the upper part until the temperature of the wafer bearing surface on the uppermost heat conducting layer (for example, the second heat conducting layer 3212) is uniform.
It will be appreciated that the various factors that affect the heat of conduction are known from the heat conduction equation.
The heat transfer formula can be expressed as:
Q=k×a×Δt/d, where Q represents heat, K represents thermal conductivity, a represents a heat transfer area, Δt represents a temperature difference, and d represents a heat transfer distance.
According to the heat conduction formula, to achieve temperature balance between the heat conduction paths with different lengths reaching the target position of the wafer carrying surface, the longer the length of the heat conduction path, the greater the temperature difference between the two ends (i.e. the temperature difference between the starting position of the heat generating element in heat conduction communication with the lower surface of the carrying seat 302 and the target position of the wafer carrying surface), for example, the greater the length of the heat conduction path extending away from the central position. And the larger the cross-sectional area of the heat conduction path, namely the heat conduction area, the smaller the temperature difference between the two ends. Based on this, the length of the thermal conduction path is inversely related to the temperature level at which it reaches the wafer bearing surface, and the cross-sectional area of the thermal conduction path is positively related to the temperature level at which it reaches the wafer bearing surface.
In the heat stage structure in the embodiment of the application, the cross-sectional area and the length of each heat conduction path can be determined based on the design of the size of the cavity in the heat conduction layer. Further, the cross section of the heat conduction path includes a cross section of the heat conduction portion, a cross section of the other heat conduction portion connecting the heat conduction portion. Wherein, the heat conducting parts are annular or disc-shaped solid parts formed between the hollow cavities of each heat conducting layer, such as a first heat conducting part 32113, a second heat conducting part 32124, a third heat conducting part 32125 and the like. According to the illustration, the thicknesses of the hollow cavities of the two heat conducting layers can be the same so that the intervals of the positions between the heat conducting layers are equal, so that the cross-sectional areas of other heat conducting parts between the heat conducting paths are the same, and the cross-sectional areas of the heat conducting parts can be adjusted only without adjusting the cross-sectional areas.
Thus, the hollow cavity in the heat conducting layer can be designed as: the cross-sectional area of the heat conducting portion of each heat conducting layer, which is closer to the central axis, is smaller, that is, the cross-sectional area of the heat conducting portion, which is farther from the central axis, is larger, so that the difference in temperature difference caused by the lengths of the heat conducting paths is compensated.
In some embodiments, a thermal conduction model may be formed in advance according to physical parameters of the thermal stage in combination with a principle based on a thermal conduction equation, so as to calculate (may be calculated by simulation of a computer) a temperature uniformity condition on an upper portion of each thermal conduction layer (an upper surface of an uppermost thermal conduction layer is a wafer carrying surface). For example, in the case where the initial structure as shown in fig. 3 and 7 is established, a preliminary size may be designed, the size of the cavity may be adjusted according to the temperature uniformity to adjust the cross-sectional area of the heat conducting portion (the distance between the heat conducting layers may also be adjusted to adjust the length), and the iterative adjustment may be performed according to the temperature uniformity as a constraint until the temperature is uniform.
For example, as shown in the cross section of fig. 5, the same initial dimensions of the cross sectional areas of the first cavity 32111 and the second cavity 32112 may be set, and it may be further determined whether to adjust their dimensions according to the simulation calculation result of the thermal conduction model until the temperature is equalized. For another example, as shown in the cross section of fig. 6, the initial dimensions of the third cavity 32121, the fourth cavity 32122, and the fifth cavity 32123 may be set to be the same, and their dimensions may be further adjusted according to the simulation calculation result of the thermal conduction model until the temperatures are equalized.
As an example, a specific configuration of the soaking structure 321 in the example is described.
The first heat conductive layer 3211 includes: a first cavity 32111 coaxial with the carrier 302, a second cavity 32112 disposed around the first cavity 32111 and extending to a side edge of the carrier 302, and a first heat-conducting portion 32113 formed between the first cavity 32111 and the second cavity 32112. As an example, the first cavity 32111 may have a disc-shaped structure having a cross-section with a central symmetrical geometry, such as a disc shape. The second cavity 32112 may be an annular structure with a cross-section that is a central symmetrical combination of shapes, such as a circular ring. Referring also to FIG. 5, a schematic cross-sectional view of the B-B direction of FIG. 3 is shown. In fig. 5, the first cavity 32111 has a circular cross-section, the second cavity 32112 has a circular cross-section, and the first cavity 32111 and the second cavity 32112 are spaced apart to define a circular first thermally conductive portion 32113.
The second heat conductive layer 3212 includes a third cavity 32121 coaxial with the carrier 302, a fourth cavity 32122 disposed around the third cavity 32121, a fifth cavity 32123 disposed around the fourth cavity 32122 and extending to a side edge of the carrier 302, a second heat conductive portion 32124 formed between the third cavity 32121 and the fourth cavity 32122, and a third heat conductive portion 32125 formed between the fourth cavity 32122 and the fifth cavity 32123. As an example, the third cavity 32121 may be a disk-shaped structure having a cross-section that is a centrosymmetric geometry, such as a disk shape. The fourth cavity 32122 and the fifth cavity 32123 may have a ring-shaped structure with a cross-section having a centrosymmetric geometry, for example, a circular ring shape. Referring also to FIG. 6, a schematic cross-sectional view of the C-C direction of FIG. 3 is shown. In fig. 6, the cross section of the third cavity 32121 is circular, the cross section of the fourth cavity 32122 is circular around the third cavity 32121, and the cross section of the fifth cavity 32123 is circular around the fourth cavity 32122. Thus, the third cavity 32121 and the fourth cavity 32122 define an annular second thermally conductive portion 32124 therebetween, and the fourth cavity 32122 and the fifth cavity 32123 define an annular third thermally conductive portion 32125 therebetween. The first heat conducting portion 32113, the second heat conducting portion 32124 and the third heat conducting portion 32125 are communicated; the first heat conductive portion 32113 corresponds in position to the fourth cavity 32122 in the up-down direction.
As shown in fig. 7, a perspective schematic view of a third heat stage 300a in accordance with a further embodiment of the present application is shown from an elevation view.
In contrast to the embodiment of fig. 3, the third heat stage 300a in the embodiment of fig. 7, which carries at least one heat conducting layer of the soaking structure in the seat 302a, comprises, in addition to the first heat conducting layer 3211 and the second heat conducting layer 3212, a third heat conducting layer 3213 on the second heat conducting layer 3212. The third heat conductive layer 3213 includes a sixth cavity 32131 in a ring shape, and a seventh cavity 32132 disposed around the sixth cavity 32131. As an example, the sixth cavity 32131 may be a circular ring shape and the seventh cavity 32132 may be a circular ring shape. Wherein, the inner hole of the sixth cavity 32131 forms a disc-shaped fourth heat conducting part 32133, and the fourth heat conducting part 32133 is coaxial with the bearing seat 302 a. In a further example, the fourth heat conducting portion 32133 is, for example, a disk-shaped structure with a circular cross section. A fifth annular heat conducting part 32134 is formed between the sixth cavity 32131 and the seventh cavity 32132. In a further example, the fifth heat conducting portion 32134 is, for example, a circular ring structure. The seventh cavity 32132 forms a sixth heat conducting portion 32135 with the side edge of the carrier 302 a. In a further example, the sixth heat conducting portion 32135 is, for example, a circular ring structure. The fourth heat conducting portion 32133 and the fifth heat conducting portion 32134 are in communication with the third heat conducting portion 32125 and the second heat conducting portion 32124.
The fifth heat conductive part 32134 is located in a vertical direction corresponding to the fourth cavity 32122. Optionally, the fifth heat conducting part 32134 may correspond to a central position of the fourth cavity 32122. Reference may be made to fig. 8, which shows a schematic cross-sectional structure in the direction D-D in fig. 7. In fig. 8, a sixth cavity 32131 and a seventh cavity 32132 in the shape of a circular ring, and a fourth heat conducting part 32133 in the shape of a disc, a fifth heat conducting part 32134 in the shape of a circular ring, and a sixth heat conducting part 32135 are exemplarily shown.
In fig. 7, the soaking structure 321 is configured to include 1, 2 and 3 heat conductive parts in the first heat conductive layer 3211, the second heat conductive layer 3212 and the third heat conductive layer 3213 from bottom to top, respectively, that is, the number of heat conductive parts included in the soaking structure 321 in the heat conductive layer in the bottom-to-top direction increases, so that heat is guided and dissipated more uniformly.
It should be noted that, the soaking structure in the second heat stage 300 or the third heat stage 300a in the above embodiment is only a few exemplary structures, and the structure of the heat conducting layer may be changed according to the actual application, for example, the number or the size of the cavities may be changed, so that the number or the size of the heat conducting parts may be changed correspondingly, which is only required to achieve the soaking effect on the wafer carrying surface, and the above embodiment is not limited thereto.
In addition, it should be specifically noted that, in the embodiment of the present application, the heating element is changed into the cylindrical structure body disposed in the center of the support body, and a longer heat conduction path is formed through the bearing seat to the wafer bearing surface, so that compared with the resistor wire winding pattern in the related art, the size of the heating element is greatly reduced, and the damage risk caused by thermal expansion and cold contraction stress can be effectively avoided. Various soaking structures, such as a soaking layer of high thermal conductivity material, may be used, and the soaking structure 321 in the embodiment of the present application is not limited thereto.
The embodiment of the application also provides a semiconductor processing device, which comprises: a reaction chamber; the second or third thermal stage 300 or 300a as described in any of the previous embodiments is disposed in the reaction chamber. The reaction chamber may be a vacuum chamber into which a reaction gas is introduced to react with the surface of the wafer 200, so as to implement a deposition or etching process on the surface of the wafer.
In summary, the application discloses a heat table and a semiconductor processing device using the same, and relates to the technical field of semiconductor manufacturing, wherein the heat table comprises: a support body formed around a central axis, the central position being provided with a cylindrical structure body in which heating elements are arranged; the bearing seat is coaxially arranged on the supporting body, the top surface forms a wafer bearing surface, and a soaking structure for uniformly conducting heat output by the heating element to the wafer bearing surface is arranged in the bearing seat. The heating element is designed to be in a coaxial structure in the support body, and the soaking structure matched with the bearing seat uniformly conducts the heat of the heating element to the wafer. Therefore, the resistor wire winding pattern of the heating element does not need to be complicated, the processing and the manufacturing are convenient, and the heating element is changed into a simple geometric structure, so that the problem of local damage is not easy to occur under the conditions of thermal expansion and cold contraction.
The above embodiments are merely illustrative of the principles of the present application and its effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the application. Therefore, it is intended that all equivalent modifications and changes made by those skilled in the art without departing from the spirit and technical spirit of the present application shall be covered by the scope of the present application.
Claims (9)
1. A thermal block, comprising:
a support body formed around a central axis, the central position being provided with a cylindrical structure body in which heating elements are arranged;
The bearing seat is coaxially arranged on the supporting body, the top surface forms a wafer bearing surface, and a soaking structure for uniformly transmitting the heat output by the heating element to the wafer bearing surface is arranged in the bearing seat;
The soaking structure comprises at least one heat conducting layer arranged along the up-down direction; each heat conducting layer is provided with at least one cavity; and the solid parts outside the hollow cavity of the soaking structure form heat conduction paths which are divergent from bottom to top in the bearing seat.
2. The thermal block of claim 1, wherein the at least one cavity is configured as a disk or ring-shaped structure coaxial with the carrier to define at least one ring-shaped or disk-shaped thermally conductive portion of each thermally conductive layer in a solid portion.
3. The heat block of claim 1, wherein the at least one cavity is configured as a disc-shaped or annular structure coaxial with the susceptor.
4. The heat stage of claim 2, wherein the soaking structure exhibits an increased number of thermally conductive portions contained in the thermally conductive layer in a bottom-to-top direction.
5. The platen of claim 2, wherein the dimensions of the cavities in each thermally conductive layer determine a cross-sectional area and a length of the thermally conductive section in each thermally conductive path that are iterated and determined by the thermal conduction model based on a temperature equalization of the upper surface of the load-bearing surface, the length of the thermally conductive path being inversely related to a temperature magnitude of a location where it arrives at the wafer-bearing surface, the cross-sectional area of the thermally conductive path being positively related to a temperature magnitude of a location where it arrives at the wafer-bearing surface.
6. The heat stage of claim 2, wherein the cross-sectional area of the thermally conductive portion in each thermally conductive layer is smaller as it is closer to the central axis.
7. The heat block of claim 1, wherein the at least one thermally conductive layer comprises a first thermally conductive layer and a second thermally conductive layer sequentially distributed from bottom to top;
the first heat conductive layer includes: the bearing seat comprises a first cavity, a second cavity and a first heat conduction part, wherein the first cavity is coaxial with the bearing seat, the second cavity is arranged around the first cavity and extends to the side edge of the bearing seat, and the first heat conduction part is formed between the first cavity and the second cavity;
The second heat conductive layer includes: a third cavity coaxial with the bearing seat, a fourth cavity surrounding the third cavity, a fifth cavity surrounding the fourth cavity and extending to the side edge of the bearing seat, a second heat conduction part formed between the third cavity and the fourth cavity, and a third heat conduction part formed between the fourth cavity and the fifth cavity;
wherein the first heat conduction part, the second heat conduction part and the third heat conduction part are communicated; the first heat conduction part is positioned in the up-down direction and corresponds to the fourth cavity.
8. The thermal station of claim 7, wherein the at least one thermally conductive layer further comprises a third thermally conductive layer on the second thermally conductive layer; the third heat conductive layer includes:
an annular sixth cavity;
A seventh cavity disposed around the sixth cavity;
The inner hole of the sixth cavity is provided with a disk-shaped fourth heat conduction part, and the fourth heat conduction part is coaxial with the bearing seat; an annular fifth heat conduction part is formed between the sixth cavity and the seventh cavity, and the position of the fifth heat conduction part in the up-down direction corresponds to the fourth cavity; a sixth heat conduction part is formed between the seventh cavity and the side edge of the bearing seat; the third heat conduction part corresponds to the seventh cavity in position in the up-down direction;
The fourth heat conduction part and the fifth heat conduction part are communicated with the third heat conduction part and the second heat conduction part.
9. A semiconductor processing apparatus, comprising: a reaction chamber; a thermal station according to any one of claims 1 to 8, disposed in the reaction chamber.
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| CN114267625A (en) * | 2021-12-20 | 2022-04-01 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
| CN114883165A (en) * | 2021-02-05 | 2022-08-09 | 日本碍子株式会社 | Wafer support table |
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| CN219586179U (en) * | 2022-07-01 | 2023-08-25 | 苏州珂玛材料科技股份有限公司 | Replacing structure of heater suitable for wafers of different sizes |
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| CN114883165A (en) * | 2021-02-05 | 2022-08-09 | 日本碍子株式会社 | Wafer support table |
| CN114267625A (en) * | 2021-12-20 | 2022-04-01 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
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