CN118190153A - SNSPD low Wen Douchu circuit and device - Google Patents
SNSPD low Wen Douchu circuit and device Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention relates to an SNSPD low Wen Douchu circuit and a device, comprising a first resistor, a first capacitor and an LC filter circuit; the first capacitor is connected with an output port of the SNSPD and forms an RC filter loop with an input resistor of a later-stage circuit, and the RC filter loop is used for acquiring a complete SNSPD pulse signal and outputting the SNSPD pulse signal to the low-temperature amplifier; the series circuit formed by the first resistor and the LC filter circuit is respectively connected with an output port of the SNSPD and the bias voltage and is used for providing direct current bias for the SNSPD and filtering noise of the direct current bias. The RC filter loop can improve the bandwidth of the SNSPD low-temperature reading circuit, reduce pulse signal reflection, and the LC filter loop can improve the electric noise state of the direct current shunt so that the reading circuit can effectively acquire the SNSPD pulse signal, and the combination of the RC filter loop and the LC filter loop can effectively improve the measurement transition current of the device and the whole detection performance of the device.
Description
Technical Field
The invention relates to the technical field of SNSPDs, in particular to a SNSPD low Wen Douchu circuit and a device.
Background
The Superconducting Nanowire Single Photon Detector (SNSPD) has the advantages of high detection efficiency (> 90%), low dark count rate (< 1 cps), low time jitter (< 20 ps), high count rate (> 1 Gcps) and the like, and plays a key role in the fields of optical quantum information technology, deep space laser communication, bioluminescence imaging and the like. The SNSPD detection process mainly comprises the steps of biasing a superconducting nanowire near a transition current, and forming a local hot spot (a resistive region) after a single photon strikes the nanowire and is absorbed, so that the current flowing through the nanowire is discharged to a reading circuit to generate a voltage pulse signal. In the reading circuit of the SNSPD, in order to realize the direct current Bias to the nanowire and the reading of the alternating current radio frequency pulse signal, an alternating current coupling mode is generally used, that is, a Bias Tee (Bias Tee) with three ports is needed. Specifically, the DC+RF end of the biaser is directly connected with the SNSPD, the DC end is connected with direct current bias, and the RF end is connected with a signal output circuit. Since the direct pulse signal generated by photon triggered nanowires is very weak (-1 mV), a Low Noise Amplifier (LNA) is also required to amplify the output signal at the RF output, thereby achieving high signal-to-noise ratio pulse signal detection.
The electrical pulse signal generated by the SNSPD comprises a fast rising edge (< 500 ps) and a slow falling edge (-50 ns), and is very rich in frequency components, covering a wide bandwidth range (DC to >2 GHz). Moreover, since the SNSPD is biased slightly below the transition current (SWITCHING CURRENT, above which the device will enter normal state and fail to operate), weak electrical noise or circuit reflected pulses may trigger the transition of the SNSPD from the superconducting state to the configured state, resulting in latch-up of the SNSPD (latching, device stuck in normal state). Currently, conventional SNSPD readout schemes, mostly employing commercial, room temperature readout circuits, include a bias (ZX 85-12G-S+, mini Circuit Inc., bandwidth range 200kHz-12 GHz) and a low noise amplifier (LNA 650, RF Bay, bandwidth range 30kHz-600 MHz) to achieve signal output. Recent studies have shown that the use of low temperature low noise amplifiers can significantly improve the time jitter performance of the SNSPD. However, implementing this solution requires placing the biaser in a low temperature environment below 40 kelvin. At present, the influence of a bias device working at low temperature on SNSPD detection performance is limited in relevant research reports. In addition, the design of the low-temperature bias parameters and the direct current filter thereof applicable to the SNSPD is not clear. When the bandwidths of the low-temperature biasers are not matched, the device can be obviously restrained from measuring the transition current, and the overall detection performance of the device is further restrained. In addition, the direct current bias branch circuit may introduce larger noise interference, so that the SNSPD output signal to noise ratio is reduced, and even the SNSPD cannot work normally.
Disclosure of Invention
The invention aims to solve the technical problem of providing an SNSPD low Wen Douchu circuit and an SNSPD low Wen Douchu circuit device, which can improve the detection performance of the SNSPD in a low-temperature environment, such as detection efficiency, measurement of transition current, time jitter and the like.
The technical scheme adopted for solving the technical problems is as follows: providing an SNSPD low Wen Douchu circuit which comprises a first resistor, a first capacitor and an LC filter circuit; the first capacitor is connected with an output port of the SNSPD and forms an RC filter loop with an input resistor of a later-stage circuit, and the RC filter loop is used for acquiring a complete SNSPD pulse signal and outputting the SNSPD pulse signal to a low-temperature amplifier; and two ports of a series circuit formed by the first resistor and the LC filter circuit are respectively connected with the output port of the SNSPD and the bias voltage and are used for providing direct current bias for the SNSPD and filtering noise of the direct current bias.
Further, the capacitance value C of the first capacitor satisfies the formulaWherein R is the resistance value of an input resistor of a later-stage circuit, and f L is the low-frequency cutoff frequency of an RC filter loop formed by the first capacitor and the input resistor.
Further, the low-frequency cutoff frequency is not higher than the frequency of the low-frequency signal in the SNSPD pulse.
Further, the LC filter circuit is a low pass filter.
Further, the LC filter circuit comprises a filter inductor and a filter capacitor, and the filter inductor and the filter capacitor are connected in series.
Further, the capacitance value C' of the filter capacitor satisfies the formulaWherein L is the inductance value of the filter inductor, and f H is the high-frequency cut-off frequency of the LC filter loop formed by the filter capacitor and the filter inductor.
Further, the high-frequency cutoff frequency is not lower than the frequency of the first harmonic of the SNSPD pulse signal and ten times the fundamental frequency of the SNSPD pulse signal.
The invention aims to provide an SNSPD low-temperature reading device, which comprises a cold machine, an SNSPD fixed on the cold machine and a circuit board assembly, wherein the circuit board assembly comprises a circuit board and any SNSPD low-temperature reading circuit which is arranged on the circuit board and is electrically connected with the circuit board.
Further, the first resistor is a low-temperature thin film resistor, the first capacitor and the filter capacitor are C0G capacitors packaged by 1206, and the filter inductor is a radio-frequency winding inductor packaged by a patch; the circuit board is a double-layer FR4 circuit board, the surface layer of the circuit board is connected with the first resistor, the first capacitor, the filter capacitor and the filter inductor by adopting copper-clad signal wires, the bottom layer of the circuit board is connected with the ground by adopting copper-clad wires, and the periphery of the copper-clad signal wires is connected with upper and lower layers of grounding signals by adopting through holes.
Further, the circuit board assembly further comprises a first SMA radio frequency connector for connecting with an output port of the SNSPD, a second SMA radio frequency connector for connecting with the low-temperature amplifier, a third SMA radio frequency connector for connecting with a current acquisition card, and a fourth SMA radio frequency connector for connecting with a voltage source; the current acquisition card is used for acquiring the current value of the direct current bias, and the voltage source is used for providing the bias voltage.
Advantageous effects
Due to the adoption of the technical scheme, compared with the prior art, the invention has the following advantages and positive effects: according to the invention (1), the LC filter circuit is arranged on the DC shunt of the biaser to filter the noise of the DC bias branch, so that stable DC bias is provided for the system, and the output noise of the system is reduced, so that the system can work stably. (2) The SNSPD response pulse signal is subjected to frequency spectrum simulation analysis to obtain a proper low-frequency cutoff frequency, and the capacitance value of the first capacitor is adjusted to match the low-frequency cutoff frequency value, so that an RC filter loop formed by the SNSPD response pulse signal and an input resistor of a later-stage circuit can completely cover the frequency width of the SNSPD pulse signal, and further, the reduction of a transformation current caused by the increase of waveform reflection is prevented. (3) Through the combination of the LC filter circuit and the RC filter circuit, the quality of the device for measuring the transition current can be effectively improved, and the whole detection performance of the device is improved.
Drawings
Fig. 1 is a device connection diagram of a first embodiment of the present invention;
fig. 2 is a fourier transform diagram of an SNSPD pulse signal according to the first embodiment of the present invention;
FIG. 3 is a schematic circuit diagram of a bias module of a first embodiment of the invention;
FIG. 4 is a model diagram of a bias module of a first embodiment of the invention;
fig. 5 is an ac transmission characteristic diagram of the high-pass filtering according to the first embodiment of the present invention;
fig. 6 is an ac transmission characteristic diagram of LC filtering according to the first embodiment of the present invention;
Fig. 7 is a signal output diagram of a first embodiment of the invention with the LC filter loops removed;
FIG. 8 is a simulation of output pulse waveforms for different cut-off frequencies for the first embodiment of the present invention;
FIG. 9 is a graph showing actual test of output pulse waveforms for different cut-off frequencies according to the first embodiment of the present invention;
FIG. 10 is a graph of efficiency tests using different cut-off frequencies for the first embodiment of the present invention;
fig. 11 is an efficiency test chart of different cut-off frequencies in a 2.2K environment using the first embodiment of the present invention.
Detailed Description
The application will be further illustrated with reference to specific examples. It is to be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. Furthermore, it should be understood that various changes and modifications can be made by one skilled in the art after reading the teachings of the present application, and such equivalents are intended to fall within the scope of the application as defined in the appended claims.
A first embodiment of the present invention relates to an SNSPD low Wen Douchu circuit, as shown in fig. 1, comprising a Bias module (Bias Tee) consisting of a first resistor, a first capacitor, and an LC filter circuit. The SNSPD is first connected to a bias module through a low-temperature copper axis with the length of 15cm, and the module comprises a resistor R1 (namely a first resistor with the resistance value of 100kΩ), a blocking capacitor C1 (namely a first capacitor with the capacitance value of 100nF, and a C0G capacitor with the capacitance value of 100nF, 1206 packaging) and a direct current filtering branch. The direct current filtering branch circuit comprises filtering capacitors C2-C5 and filtering inductors L1 and L2. The filter capacitors C2-C5 are 2C 0G capacitors (100 nF each) packaged by 1206, 2C 0G capacitors (10 nF each) packaged by 1206, and the filter inductors L1 and L2 are 68 mu H radio frequency winding inductors packaged by two patches. These components are soldered to a double layer FR4 circuit board using copper clad signal lines on the surface and copper clad ground on the bottom to ensure signal integrity. The pulse signal of the SNSPD is coupled through a blocking capacitor C1 and then output to a Low Noise Amplifier (LNA) through a coaxial line.
Fig. 2 shows a spectrum analysis diagram of an SNSPD signal, where a frequency domain signal is converted into a time domain signal by fourier transforming the SNSPD signal, and a suitable cut-off frequency is selected. By observing the frequency of the fundamental wave, the cutoff frequency needs to be selected to be less than 10 times of the cutoff frequency of the fundamental wave for better signal restoration.
Fig. 3 shows a schematic diagram design of a circuit board assembly of a bias module, including four SMA rf connectors, and the bias module described above, specifically including: a low-temperature thin film resistor R1 (resistance value is 100kΩ); the four parallel filter capacitors C2-C5 are connected in series with two radio frequency winding filter inductors L1 and L2 and are connected to the output blocking capacitor C1 in a bridging manner through a 0 omega resistor. The SMA interface 1 is connected with the SNSPD, the SMA interface 2 is a radio frequency output port connected with a rear-stage radio frequency amplifier (LNA), the SMA interface 3 is a current acquisition interface connected with a current acquisition card, and the SMA interface 4 is a voltage bias port connected with a voltage source.
Fig. 4 shows a model of the invention, passive components are connected by copper clad wires on a 1.2mm thick double layer FR4 board, the top layer being the signal connection layer and the bottom layer being the ground layer. And through holes are adopted around the signal transmission line to connect upper and lower layers of ground signals so as to reduce parasitic capacitance and parasitic inductance. For the design of inductance and capacitance values, firstly, spectrum simulation analysis is carried out on the SNSPD output pulse signals, and a proper capacitance value is selected to cover the low-frequency signals of the SNSPD output pulses. The high-pass filter loop formed by resistor and capacitor satisfies the formulaF L represents the RC filter loop low frequency cut-off frequency @ -3dB. The resistance is determined by the input impedance of the subsequent circuit, and is typically 50Ω. The cut-off frequency was 32kHz, so the capacitance was 100nF. The LC filter loop forms a low-pass filter to meet the formula/>F H represents the LC filter loop high frequency cut-off frequency @ -3dB. The total inductance L tol of the circuit needs to be larger, generally between 100 muH and 200 muH, and when the cutoff frequency is about 45.6kHz, the total capacitance C tol is 220nF, and is realized by adopting 2 parallel 100nF and 2 parallel 10nF capacitors.
Fig. 5 shows the cut-off frequency variation of the high-pass filter caused by the variation of different capacitance values of the RC filter, and the respective capacitances of 0.1nF, 1nF, 10nF and 100nF were simulated by using TINA software, and the resistance value is the input impedance of the subsequent stage circuit, and is generally 50 Ω. The resulting ac transmission characteristics were simulated, with corresponding f L being 32.0kHz, 319.4kHz, 3.2MHz and 32.1MHz, respectively.
FIG. 6 this design is taken at 50kHz for the LC cut-off frequency, with 136 μH inductance, 2 100nF in parallel and 210 nF in parallel capacitances used in the design, and the TINA simulation results in an LC filter circuit AC transmission characteristic with an f H of approximately 45.6kHz.
Fig. 7 shows waveforms after the output of the amplifier is removed after LC filtering, and the signal of the SNSPD cannot be read out due to bandwidth mismatch, so that the noise of the whole system is very large, and the stability of the read signal of the SNSPD is improved by a suitable LC filtering loop.
In FIG. 8, the resulting pulse waveforms are shown simulated using LT-SPICE software when SNSPD is connected to different f L (32.0 kHz, 319.4kHz, 3.2MHz, 32.1 MHz). As shown by the red arrows in the figure, at different f L frequencies, the pulse reflection is most obvious at 32.1MHz, and gradually weakens along with the reduction of f L, and the reflection is gradually gentle after 32.0 kHz. Wherein the direction of the arrow indicates that the waveform has a pulse reflection that is decreasing with decreasing cutoff frequency.
FIG. 9 shows pulse waveforms measured when the same SNSPD is connected to different f L (32.0 kHz, 319.4kHz, 32.1 MHz) cryogenic Bias tee, room temperature Bias tee (ZX 85-12G-S+, mini Circuit Inc.,200.0 kHz). Wherein the Bias tee RF outputs are all connected to room temperature amplifier LNA 650. As shown by the red arrows in the figure, the SNSPD output pulse was tested to reflect most significantly at 32.1MHz when using the different cut-off frequencies of this embodiment, and the trend of change was consistent with the simulation. Wherein the direction of the arrow indicates that the waveform has a pulse reflection that is decreasing with decreasing cutoff frequency.
Fig. 10 shows a plot of the detection efficiency (SDE) as a function of Bias current when the same SNSPD is connected to different f L (32.0 kHz, 319.4kHz, 32.1 MHz) low temperature Bias tee, room temperature Bias tee (ZX 85-12G-s+, mini Circuit inc.,200.0 kHz) devices. It can be seen that, using the present invention, the transition current was measured to be 9.4. Mu.A at 32.1MHz for f L; f L is 319.4kHz, the corresponding measured transition current is 9.7. Mu.A; at 32.0kHz f L, the corresponding measured transition current was 10.4 μΑ. When f L is 32kHz (red curve), the reflection phenomenon of SNSPD is weakened, and the measured transition current is effectively improved. I.e. the lower f L, the greater the measured transition current. The invention improves the measurement transition current by effectively reducing the pulse reflection of the circuit. And compared with a conventional readout circuit (i.e., room temperature bias tee, f L =200.0 kHz data in the figure), the measured transition current of the present invention is improved by approximately 0.52 μa (by approximately 5.3% relative to the current value of the room temperature circuit), and the detection efficiency is also improved from 49% to 69.0%.
Fig. 11 shows the measurement curves of normalized detection efficiency (IDE) as a function of Bias current when the same SNSPD is connected to the same cryogenic amplifier (2 KLNA) device at 2.2K temperatures, respectively, with different bandwidths matching Bias tee. It can be seen that the measured transition current is increased from 16.1 mu A to 17.5 mu A, the transition current is increased by 8.7%, and the saturated platform width (1.4 mu A) of the detection efficiency curve is widened, so that the device has a wider working current range. The invention can improve the bandwidth and the electric noise state of the SNSPD low-temperature reading circuit by combining the two filter loops, and reduce the pulse signal reflection, thereby effectively improving the measurement transition current of the device and the whole detection performance of the device.
A second embodiment of the invention relates to a SNSPD-based low temperature reading apparatus comprising a chiller, and the SNSPD, and a circuit board assembly, secured to the chiller. The circuit board assembly comprises a circuit board and an SNSPD low Wen Douchu circuit (i.e. low-temperature Bias Tee) which is arranged on the circuit board and is electrically connected with the circuit board.
The low-temperature Bias Tee and the SNSPD of the device are connected with an SMA interface of a low-temperature coaxial line inside the G-M refrigerator in the following mode, wherein the length of the low-temperature coaxial line is about 1M: firstly, an SNSPD packaging box and a low-temperature Bias Tee are respectively fixed on a 2.2K cooling table of a refrigerator through screws; the SNSPD is connected with an SMA interface 1 (direct current port) of the low-temperature Bias Tee through a coaxial line with the length of 15 cm. Secondly, the remaining three ports of the low-temperature Bias Tee are respectively connected with the SMA interfaces of 3 independent low-temperature coaxial lines through coaxial lines with the length of 15 cm. Wherein, the SMA interface 2 is connected with a separate low-temperature coaxial line, and the other end of the low-temperature coaxial line is connected with a room temperature radio frequency low-noise amplifier (LNA 650) after being connected with the room temperature coaxial line. The signal output by the low noise amplifier is input to an oscilloscope (MSOV A, keysight) or a photon counter through a 1m long room temperature coaxial line to perform pulse waveform observation, detection efficiency curve measurement and the like. Finally, the SMA interface 3 (Bias port 1) of the low temperature Bias Tee is connected to the SMA interface of an independent low temperature coaxial line, while the SMA interface of the other end of the low temperature coaxial line is connected to the room temperature voltage Bias source via the room temperature coaxial line. The SMA interface 4 (offset port 2) of the low temperature Bias Tee is connected with the low temperature coaxial line, and the SMA interface at the other end of the low temperature Bias Tee is connected to the load branch of the acquisition card through the room temperature coaxial line for I-V curve measurement. During the measurement, the output pulse waveform is observed on an oscilloscope by changing the bias voltage. In the process of measuring the photoelectric performance, an optical signal to be tested is input to an SNSPD working at a low temperature through an optical fiber to generate an optical response electric pulse, and a counter is used for measuring performance curves such as efficiency, current and the like.
Claims (10)
1. An SNSPD low Wen Douchu circuit comprises a first resistor, a first capacitor and an LC filter circuit; the first capacitor is connected with an output port of the SNSPD and forms an RC filter loop with an input resistor of a later-stage circuit, and the RC filter loop is used for acquiring a complete SNSPD pulse signal and outputting the SNSPD pulse signal to a low-temperature amplifier; and two ports of a series circuit formed by the first resistor and the LC filter circuit are respectively connected with the output port of the SNSPD and the bias voltage and are used for providing direct current bias for the SNSPD and filtering noise of the direct current bias.
2. The sensing circuit of claim 1, wherein the capacitance value C of the first capacitor satisfies the formulaWherein R is the resistance value of an input resistor of a later-stage circuit, and f L is the low-frequency cutoff frequency of an RC filter loop formed by the first capacitor and the input resistor.
3. The sensing circuit of claim 2, wherein the low frequency cutoff frequency is not higher than a frequency of a low frequency signal in the SNSPD pulse.
4. The readout circuit of claim 1, wherein the LC filter circuit is a low pass filter.
5. The readout circuit of claim 4, wherein the LC filter circuit comprises a filter inductance and a filter capacitance, the filter inductance and the filter capacitance being connected in series.
6. The readout circuit according to claim 5, wherein a capacitance value C' of the filter capacitor satisfies a formulaWherein L is the inductance value of the filter inductor, and f H is the high-frequency cut-off frequency of the LC filter loop formed by the filter capacitor and the filter inductor.
7. The readout circuit according to claim 6, wherein the high frequency cutoff frequency is not lower than a frequency of a first harmonic of the SNSPD pulse signal and ten times a fundamental frequency of the SNSPD pulse signal.
8. A SNSPD low temperature reading apparatus comprising a chiller and a SNSPD fixed to the chiller, and a circuit board assembly comprising a circuit board and the SNSPD low temperature reading circuit of any one of claims 1-7 disposed on and electrically connected to the circuit board.
9. The readout device of claim 8, wherein the first resistor is a low-temperature thin film resistor, the first capacitor and the filter capacitor are C0G capacitors packaged by 1206, and the filter inductor is a radio frequency winding inductor packaged by a patch; the circuit board is a double-layer FR4 circuit board, the surface layer of the circuit board is connected with the first resistor, the first capacitor, the filter capacitor and the filter inductor by adopting copper-clad signal wires, the bottom layer of the circuit board is connected with the ground by adopting copper-clad wires, and the periphery of the copper-clad signal wires is connected with upper and lower layers of grounding signals by adopting through holes.
10. The readout device of claim 8, wherein the circuit board assembly further comprises a first SMA radio frequency connector for connecting to an output port of the SNSPD, a second SMA radio frequency connector for connecting to the cryogenic amplifier, a third SMA radio frequency connector for connecting to a current acquisition card, and a fourth SMA radio frequency connector for connecting to a voltage source; the current acquisition card is used for acquiring the current value of the direct current bias, and the voltage source is used for providing the bias voltage.
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| CN202410215730.7A CN118190153A (en) | 2024-02-27 | 2024-02-27 | SNSPD low Wen Douchu circuit and device |
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| CN202410215730.7A CN118190153A (en) | 2024-02-27 | 2024-02-27 | SNSPD low Wen Douchu circuit and device |
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