CN118180013A - Cleaning device for semiconductor parts and cleaning method thereof - Google Patents
Cleaning device for semiconductor parts and cleaning method thereof Download PDFInfo
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- CN118180013A CN118180013A CN202211604287.XA CN202211604287A CN118180013A CN 118180013 A CN118180013 A CN 118180013A CN 202211604287 A CN202211604287 A CN 202211604287A CN 118180013 A CN118180013 A CN 118180013A
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/007—Heating the liquid
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A cleaning device for a semiconductor component and a cleaning method thereof, wherein the semiconductor component comprises a first surface and a second surface which are opposite to each other, the semiconductor component is provided with a through hole penetrating the first surface and the second surface, and the cleaning device comprises: the mixing cavity comprises an outlet, and the semiconductor component is connected with the mixing cavity so that the outlet corresponds to the through hole; a liquid source for delivering liquid into the mixing chamber through a liquid delivery conduit; a compressed gas source for delivering compressed gas into the mixing chamber through the compressed gas channel; the pulse pressure controller is used for controlling the pressure rise and fall of the compressed gas entering the mixing cavity, so that the compressed gas and the liquid are mixed to form a pulse jet beam, and the pulse jet beam enters the through hole from the outlet to clean the through hole. The cleaning device can clean semiconductor parts and has less damage to the base material on the inner side wall of the through hole.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a cleaning device and a cleaning method for semiconductor parts.
Background
With the breakthrough of integrated circuit manufacturing technology nodes to 3nm technology, the requirements on the cleanliness in the reaction chamber of plasma processing equipment are higher and higher. Particulate contaminants present in the reaction chamber can greatly affect the accuracy of wafer processing or cause critical defects to occur on the wafer surface, further affecting the yield of wafer processing.
Currently, for semiconductor components having through holes, a machining drill is usually inserted into the through holes for cleaning treatment, but the machining drill inevitably physically damages the inner wall substrate material of the through holes. Therefore, there is an urgent need for a cleaning apparatus and a cleaning method thereof to clean semiconductor parts and reduce damage to the substrate on the inner wall of the through hole.
Disclosure of Invention
The invention solves the technical problem of providing a cleaning device and a cleaning method for semiconductor parts, which are used for cleaning pollutants attached to the inner side walls of through holes in the semiconductor parts and reducing the damage to the base materials on the inner side walls of the through holes.
In order to solve the above-mentioned technical problem, the present invention provides a cleaning device for a semiconductor component, where the semiconductor component includes a first surface and a second surface opposite to each other, and the semiconductor component has a through hole penetrating the first surface and the second surface, and the cleaning device includes: the mixing cavity comprises an outlet, and the semiconductor component is connected with the mixing cavity so that the outlet corresponds to the through hole; the liquid source is used for conveying a liquid compressed gas source into the mixing cavity through a liquid conveying pipeline and conveying compressed gas into the mixing cavity through a compressed gas channel; the pulse pressure controller is used for controlling the pressure rise and fall of the compressed gas entering the mixing cavity, so that the compressed gas and the liquid are mixed in the mixing cavity to form a pulse jet beam, and the pulse jet beam enters the through hole from an outlet of the mixing cavity to clean the inner side wall of the through hole.
Optionally, the semiconductor component includes: at least one of a gas line, a mounting substrate, a gas showerhead, a nozzle, or a base; the through holes are gas channels in the mounting substrate, the gas spray header, the nozzle or the base; or the through hole is: cooling fluid passages in the mounting substrate or susceptor.
Optionally, the liquid source comprises: water, weak acid or weak base.
Optionally, the compressed gas includes: at least one of compressed air, nitrogen, argon, oxygen, and ozone.
Optionally, the liquid source comprises: a hot liquid source and a cold liquid source; the liquid delivery conduit comprises: a hot liquid delivery conduit, a cold liquid delivery conduit, and a liquid transfer channel; the cleaning device for semiconductor parts further includes: and the two ends of the hot liquid conveying pipeline are respectively connected with the hot liquid source and the alternating valve, the two ends of the cold liquid conveying pipeline are respectively connected with the cold liquid source and the alternating valve, and the two ends of the liquid conveying channel are respectively connected with the alternating valve and the mixing cavity.
Optionally, when the number of the through holes is multiple, the number of the through holes is the same as the number of the outlets, and the through holes are in one-to-one correspondence with the outlets; further comprises: at least one sealing ring is arranged between the chamber wall of the mixing chamber and the semiconductor component and is used for dividing the plurality of through holes into at least two cleaning areas.
Optionally, the method further comprises: and the valve is used for controlling the communication between the through holes and the outlets in each cleaning area.
Optionally, the valve includes: the valve plate and the driver are arranged in the mixing cavity, the driver is used for driving the valve plate to move, when the valve plate is attached to the cavity wall, the through hole is not communicated with the outlet, when a gap exists between the valve plate and the cavity wall, the through hole is communicated with the outlet, and the pulse jet beam enters the through hole from the outlet of the mixing cavity to clean the inner side wall of the through hole.
Optionally, the valve is a valve plate, the valve plate is detachably connected with the chamber wall, the shape of the valve plate corresponding to different cleaning areas is the same as the shape of the cleaning area, when one cleaning area does not need cleaning treatment, the valve plate corresponding to the cleaning area is connected with the chamber wall, so that an outlet in the cleaning area is not communicated with the through hole, and when the other cleaning area needs cleaning treatment, the cleaning area is not provided with the valve plate, so that the outlet in the cleaning area is communicated with the through hole.
Optionally, gaps are formed between the valve plates corresponding to different cleaning areas, the gaps are located between adjacent outlets, and the size of the gaps is smaller than the distance between the adjacent outlets.
Optionally, the material of the valve plate includes: a plastic plate.
Optionally, the chamber wall and the semiconductor component further comprise: and the detachable connecting part is used for realizing the connection between the semiconductor part and the mixing cavity.
Optionally, the materials of the semiconductor component include: aluminum alloy, anodized aluminum, stainless steel or ceramic; the inner side wall of the through hole is attached with pollutants, and the pollutants comprise: at least one of rare earth oxides, fluorides, oxyfluorides, aluminum fluoride, or a carbon-containing polymer.
Correspondingly, the invention also provides a method for cleaning the semiconductor parts, which comprises the following steps: providing the cleaning device; providing a semiconductor part, connecting the semiconductor part with a cleaning device, and enabling an outlet of the cleaning device to correspond to a through hole of the semiconductor part; delivering liquid from the liquid source into the mixing chamber; the pressure of the compressed gas entering the mixing cavity is controlled to rise and fall through the pulse pressure controller, so that the compressed gas entering the mixing cavity is mixed with the liquid to form a pulse jet beam, and the pulse jet beam enters the through hole from an outlet of the mixing cavity to clean the inner side wall of the through hole.
Optionally, the pressure lifting range of the pulse pressure controller is as follows: 10 psi-3000 psi.
Optionally, the pulse frequency of the pulse voltage controller is: 10KHz-1000KHz.
Optionally, when the liquid source includes: and when the hot liquid source and the cold liquid source are used, the temperature range of the hot liquid source is as follows: 60-100 ℃; the temperature range of the cold liquid source is as follows: 0-30 ℃.
Optionally, the hot liquid and the cold liquid are alternately input into the mixing cavity; the conveying time of the hot liquid is as follows: 10 seconds to 2 minutes; the conveying time of the cold liquid is as follows: 10 seconds to 2 minutes.
Optionally, when the cleaning device further includes at least one sealing ring disposed between the chamber wall of the mixing chamber and the semiconductor component, the sealing ring is configured to divide the plurality of through holes into at least two cleaning areas; the valves are used for controlling the communication between the through holes and the outlets in each cleaning area; when the valve comprises a valve plate arranged in the mixing cavity and a driver for driving the valve plate, when the through hole of one cleaning area needs to be cleaned and other cleaning areas do not need to be cleaned, the valve plate of the cleaning area which does not need to be cleaned is attached to the cavity wall by the driver, so that the outlet of the cleaning area is not communicated with the through hole, and meanwhile, a gap is arranged between the valve plate of the cleaning area which needs to be cleaned and the cavity wall, so that a pulse jet beam can enter the outlet along the boundary of the valve plate, and then enter the through hole to clean the inner side wall of the through hole.
Optionally, when the valve is a valve plate, the valve plate is detachably connected with the chamber wall, when a cleaning region does not need to clean a through hole, the valve plate corresponding to the cleaning region is connected with the chamber wall, so that an outlet of the cleaning region is not communicated with the through hole, and when another cleaning region needs to clean the through hole, the cleaning region is not provided with the valve plate; when the through holes of different cleaning areas need to be cleaned, the shape of the valve plate is the same as that of the areas which do not need to be cleaned by replacing the different valve plates.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
In the cleaning device for the semiconductor parts, the pulse pressure controller can control the pressure of compressed gas entering the mixing cavity to rise and fall, so that the compressed gas with different pressure drops and liquid flow provided by a liquid source are mixed together in the mixing cavity, a discontinuous 'bullet beam' type vortex high-frequency pulse jet beam is provided, the pulse jet beam enters the through hole through the outlet of the mixing cavity, and high-frequency water hammer striking force and erosion force can be formed on the inner wall of the through hole, so that the cleaning effect on pollutants on the inner wall of the through hole is improved. And the cleaning device can reduce the damage to the base material on the inner wall of the through hole.
Further, the liquid source comprises a hot liquid source and a cold liquid source, which are alternately introduced into the mixing chamber by frequent switching of the hot liquid source and the cold liquid source, which are mixed with compressed gas to form a heat pulse jet stream or a cold pulse jet stream, respectively. Because the material of the semiconductor component is different from the material of the pollutant on the inner side wall of the through hole, the thermal expansion coefficients of the semiconductor component and the pollutant are different, and the semiconductor component and the pollutant are continuously subjected to thermal expansion and cold contraction under the action of alternating heat pulse jet beams or cold pulse jet beams, so that the pollutant on the inner side wall of the through hole can be removed better.
Drawings
FIG. 1 is a schematic view of a cleaning apparatus for semiconductor parts according to the present invention;
FIG. 2 is an enlarged schematic view of the mixing chamber and semiconductor components of FIG. 1;
FIG. 3 is a schematic view of a structure for cleaning semiconductor parts using the cleaning apparatus of the present invention;
FIG. 4 is a top view of the semiconductor component and seal ring of FIG. 1;
FIG. 5 is a top view of the valve plate of FIG. 1;
FIG. 6 is an enlarged schematic view of region C of FIG. 5;
fig. 7 to 9 are schematic views showing the construction of another valve plate according to the present invention when operated;
fig. 10 is a schematic structural view of a semiconductor device according to the present invention;
Fig. 11 is a schematic structural view of another semiconductor device according to the present invention;
FIG. 12 is a flow chart of a method of cleaning semiconductor components of the present invention;
FIG. 13 is a scanning electron microscope image of the invention before cleaning the through holes;
FIG. 14 is a scanning electron microscope image of the invention after cleaning the through holes.
Detailed Description
As described in the background art, when the conventional cleaning device for semiconductor component is used for cleaning the through hole of the semiconductor component, the body substrate on the inner side wall of the through hole of the semiconductor component is easily damaged.
In order to solve the technical problems, the technical scheme of the invention provides a cleaning device for semiconductor parts, which comprises a pulse voltage controller. And controlling the pressure rise and fall of the compressed gas entering the mixing cavity by using the pulse pressure controller, so that the compressed gas and the liquid are mixed together to form a pulse jet beam, and the pulse jet beam enters the through hole from the outlet of the mixing cavity so as to clean the inner side wall of the through hole. The cleaning device can remove pollutants on the inner side wall of the through hole of the semiconductor part, and is not easy to damage the substrate on the inner side wall of the through hole of the semiconductor part.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
In a plasma processing apparatus, there are some semiconductor components including opposite first and second surfaces, the semiconductor components having through holes penetrating the first and second surfaces, and contaminants are easily attached to inner side walls of the through holes as described in the background art, and when the through holes are used for transporting gas, the main reasons for the contaminants attached in the through holes include:
1) For plasma corrosion resistance, the surface of the semiconductor component is usually coated with a corrosion-resistant coating, and if the bonding force between the corrosion-resistant coating and the semiconductor component is insufficient, particulate pollutants are generated. For example: a showerhead (shower head) is one of core components of a plasma processing apparatus for plasma dry etching, and process gas is uniformly supplied into a reaction chamber through a through hole (gas holes) of the showerhead. Since the process gas is typically a highly corrosive gas, ceramic coatings are typically used to protect the showerhead to improve the showerhead's corrosion resistance. Ceramic coatings for showerheads are typically manufactured using Physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), or plasma spray processes. In the deposition process of the ceramic coating, the ceramic is not only deposited on the surface of the spray header, but also deposited in the through holes. The bonding force between the ceramic coating deposited in the through hole and the inner wall of the through hole is relatively weak due to the contact angle between the ceramic deposit and the inner wall of the through hole, and especially ceramic particle pollutants are easy to fall off after the equipment is operated for a period of time.
2) In the process, a lot of byproducts are generated along with the reaction of the process gas and different dielectric layers on the surface of the wafer, and the byproducts are easy to form particle pollutants. Some of these particulate contaminants are pumped out of the reaction chamber by the vacuum pump, but some remain in the reaction chamber, may collect on the chamber walls, may deposit on the showerhead surface, may deposit in the showerhead through holes, and may fall off at any time to contaminate the wafer substrate.
When the through holes are used for conveying cooling liquid, the pollutants are water-washed, and a cleaning device is used for cleaning the pollutants on the inner side walls of the through holes.
Fig. 1 is a schematic view of a cleaning apparatus for semiconductor parts according to the present invention.
Referring to fig. 1, a cleaning apparatus 100 for semiconductor parts includes: a mixing chamber 101 including an outlet 102, the semiconductor component 110 being connected to the mixing chamber 101 such that the outlet 102 corresponds to the through hole 111; a liquid source 103 for delivering liquid into the mixing chamber 101 through a liquid delivery conduit; a source of compressed gas (not shown) delivering compressed gas 107 into the mixing chamber 110 through a compressed gas passage 108; and the pulse pressure controller 109 is used for controlling the pressure of the compressed gas 107 entering the mixing cavity 101 to rise and fall so that the compressed gas 107 and the liquid are mixed together to form a pulse jet beam, and the pulse jet beam enters the through hole 111 from the outlet 102 of the mixing cavity to remove pollutants on the inner side wall of the through hole 111.
The semiconductor part 110 includes a first surface a and a second surface B opposite to each other, and the semiconductor part 110 has a through hole 111 penetrating the first surface a and the second surface B, and the inner side wall of the through hole 111 is prone to accumulate contaminants mainly due to falling off caused by insufficient bonding force between a coating formed on the inner side wall of the through hole 111 and the inner side wall, or by-products formed in the through hole 111 as contaminants, or iron oxide scale formed in the through hole 111 as contaminants.
For more clearly illustrating that the cleaning device 100 cleans the contaminants in the through hole 111 of the semiconductor component 110, as shown in fig. 1 and 2, the mixing chamber 101 includes a chamber wall 201 (see fig. 2), the chamber wall 201 is provided with the outlet 102, and a detachable connection part (not shown) is provided between the chamber wall 201 and the semiconductor component, for example: the detachable connection member is a snap connection member, and in practice, the detachable connection member is not limited, and may be any other detachable connection member, as long as the detachable connection member can connect the semiconductor component and the chamber wall 201 together, which is a detachable connection member to be protected by the present invention. When the semiconductor components 110 are connected to the chamber wall 201 by the detachable connection, the through holes 111 of the semiconductor components 110 are in one-to-one correspondence with the outlets 102 on the chamber wall 201. The one-to-one correspondence means that one of the outlets 102 is communicated with one of the through holes 111, so that the mixed liquid from the mixing chamber 101 can enter the corresponding through hole 111 through the outlet 102 to remove the pollutants in the through hole 111.
Referring to fig. 1 and 3, the liquid source 103 is configured to deliver liquid 150 into the mixing chamber 101, the compressed gas source is configured to deliver compressed gas 107 into the mixing chamber 101, and the compressed gas 107 includes: at least one of compressed air, nitrogen, argon, oxygen, and ozone. The pulse pressure controller 109 is used for controlling the pressure rise and fall of the compressed gas 107 entering the mixing chamber 101, so that the compressed gas 107 and the liquid 150 with different pressure drops are mixed together in the mixing chamber 101, and a discontinuous "bullet beam" type vortex high-frequency pulse jet beam 170 is provided, the pulse jet beam 170 forms a high-frequency water hammer striking force and erosion force on the inner wall of the through hole 111, and the water hammer striking force and erosion force are large, so that the pollutant in the through hole 111 is removed advantageously. And the cost of removing pollutants is lower.
In this embodiment, the liquid source 103 delivers liquid into the mixing chamber through a liquid delivery pipe, the liquid source 103 includes a cold liquid source 103a and a hot liquid source 103b, and the liquid delivery pipe includes: a hot liquid delivery pipe 105, a cold liquid delivery pipe 104, and a liquid delivery passage 106, the cleaning device for semiconductor parts further includes: and an alternate valve 112, wherein two ends of the hot liquid delivery pipeline 105 are respectively connected with the hot liquid source 103b and the alternate valve 112, two ends of the cold liquid delivery pipeline 104 are respectively connected with the cold liquid source 103a and the alternate valve 112, and two ends of the liquid delivery channel 106 are respectively connected with the alternate valve 112 and the mixing cavity 101.
In this embodiment, the liquid provided by the liquid source 103 is water. In other embodiments, the liquid provided by the liquid source is: weak acids or weak bases.
In the present application, the alternating delivery of the hot liquid and the cold liquid into the mixing chamber 101 is realized by the alternating valve 112, so that the hot liquid and the cold liquid are alternately mixed with the compressed gas to form an alternating hot high-frequency pulse jet beam and a cold high-frequency pulse jet beam in the mixing chamber 101, and under the alternating action of the hot high-frequency pulse jet beam and the cold high-frequency pulse jet beam, the material of the semiconductor component is different from the material of the pollutant, and the thermal expansion coefficients of the two are different, so that the pollutant on the inner side wall of the through hole 111 is further removed. Specifically, the materials of the semiconductor component include: aluminum alloy, anodized aluminum, stainless steel or ceramic; when the pollutants are the pollutants brought by coating falling, the pollutants comprise: rare earth oxide, fluoride, oxyfluoride, wherein the contaminants are formed by the reaction of process gases, and include: aluminum fluoride or carbon-containing polymers; the pollutant is ferric oxide formed on the inner wall of the cooling liquid channel.
In the present embodiment, the semiconductor component 110 is taken as an example of a gas shower head, the number of through holes 111 of the gas shower head is very large, in order to better clean the pollutants in the through holes 111, the through holes 111 with a large number may be partitioned, for example, sealing rings (200 a, 200b and 200 c) are provided between the chamber wall 201 and the first surface a of the semiconductor component 110, and here, three sealing rings are taken as an example, and in practice, the number of sealing rings is not limited and may be provided as required. In this embodiment, the seal rings (200 a, 200b, and 200 c) are divided into a plurality of cleaning areas from inside to outside along the radial direction of the gas shower head, and are marked as a central area I, a peripheral area ii, and an edge area iii, wherein the peripheral area ii surrounds the central area I, the edge area iii surrounds the peripheral area ii, and the peripheral area ii is located between the central area I and the edge area iii, as shown in fig. 3.
With continued reference to fig. 2 and 4, valves are disposed in the central region I, the peripheral region ii, and the edge region iii, and are used to control the opening and closing of the through holes 111 and 102 in the central region I, the peripheral region ii, and the edge region iii.
In this embodiment, the valve comprises a valve plate (202 a, 202b and 202 c) and a driver (203 a, 203b and 203 c), wherein the valve plate 202a and the driver 203a are used for controlling the opening and closing between the opening 102 and the through hole 111 in the central zone I; the valve plate 202b and the driver 203b are used for controlling the opening 102 of the peripheral area ii to be communicated with the through hole 111; the valve plate 202c and the actuator 203c are used to control the opening 102 of the sum edge area iii and the opening 111. It should be noted that, the shape of the valve plate 202a is the same as the shape of the central area I, the shape of the valve plate 202b is the same as the shape of the peripheral area ii, and the shape of the valve plate 202c is the same as the shape of the edge area iii, namely: as shown in fig. 5, the valve plate 202a in the central area I is circular, the valve plate 202b in the peripheral area ii is annular, and the valve plate 202c in the edge area iii is annular.
Referring to fig. 5 and 6, gaps 204 are formed between the valve plates 202a and 202b and between the valve plates 202b and 202c, so that when a gap is left between the valve plates and the chamber wall 201, the pulse jet beam in the mixing chamber 101 can enter the corresponding outlet 102 along the gap 204, and then enter the through hole 111 to clean the pollutants in the through hole 111. On the other hand, the gap 204 is provided to facilitate the upward and downward movement of the valve plate.
And, the size of the gap 204 between the valve plates 202a and 202b, and between the valve plates 202b and 202c is smaller than the distance D between adjacent outlets 102, so that the valve plates can seal the outlets 102 corresponding to the cleaning area.
The working principle of the cleaning device is described in detail with the embodiment shown in fig. 2: the embodiment shown in fig. 2 is for cleaning the contaminants in the through hole 111 of the peripheral area ii, while the through holes 111 of the central area I and the edge area iii do not need to be cleaned, and because the through hole 111 of the central area I does not need to be cleaned, the valve plate 202a is driven by the driver 203a to be attached to the chamber wall 201, so that the valve plate 202a seals the outlet 102 of the central area I, and the pulsed jet beam in the mixing chamber 101 is difficult to enter the through hole 111 of the central area I, so that the through hole 111 of the central area I is not cleaned; likewise, driving the valve plate 202c with the driver 203c causes the valve plate 202c to seal the outlet 102 of the edge zone iii such that the pulsed jet stream in the mixing chamber 101 is difficult to enter the through-hole 111 of the edge zone iii, and thus the through-hole 111 of the edge zone iii is not cleaned; when the peripheral zone ii needs to be cleaned, a gap is left between the valve plate 202b and the chamber wall 201 by the driver 203b, so that the pulsed jet beam in the mixing chamber 101 enters the outlet 102 of the peripheral zone ii along the outer surface of the valve plate 202b, and the pulsed jet beam can enter the through hole 111 of the peripheral zone ii because the outlet 102 of the peripheral zone ii is communicated with the through hole 111 of the peripheral zone ii, thereby cleaning the pollutants in the through hole 111 of the peripheral zone ii.
In summary, when the valve includes a valve plate and a driver, if cleaning of the contaminants in the through hole 111 corresponding to a certain cleaning area is to be achieved, a gap is left between the valve plate and the chamber wall by using the driver corresponding to the cleaning area, so that a pulse jet beam can enter the outlet 102 of the cleaning area, and further cleaning of the contaminants in the through hole 111 of the cleaning area is achieved; if the valve plate is attached to the chamber wall by the actuator when the cleaning of the contaminants in the through hole 111 of a certain cleaning area is not required, the pulsed jet beam in the mixing chamber 101 is difficult to enter the corresponding outlet 102, and the cleaning of the contaminants in the inner wall of the through hole 111 of the cleaning area is difficult. The cleaning device 100 can clean the inner side walls of the through holes 111 of all the cleaning areas, can clean the inner side walls of the through holes of part of the cleaning areas, and can set the positions of the valve plates of all the cleaning areas according to actual needs.
Fig. 7 to 9 are schematic views showing the structure of sealing different cleaning areas of the valve according to another embodiment of the present invention.
In the embodiment shown in fig. 7 to 9, the valve comprises only a valve plate, which is detachably connected to the chamber wall 201.
Referring to fig. 7, when the central area I needs to be cleaned and the peripheral area ii and the edge area iii do not need to be cleaned, a corresponding valve plate 302b may be disposed in the peripheral area ii, and the valve plate 302b is connected to the chamber wall 201 of the peripheral area ii, so that the pulsed jet beam in the mixing chamber 101 is difficult to enter the through hole 111 of the peripheral area ii, and therefore, the inner side wall of the through hole 111 in the peripheral area ii is not cleaned; meanwhile, a corresponding valve plate 302c is arranged in the edge area iii, and the valve plate 302c is connected with the chamber wall 201 in the edge area iii, so that the pulse jet beam in the mixing chamber 101 is difficult to enter the through hole 111 in the edge area iii, and therefore, the inner side wall of the through hole 111 in the edge area iii is not cleaned.
Referring to fig. 8, when the peripheral area ii needs to be cleaned, but the central area I and the edge area iii do not need to be cleaned, a corresponding valve plate 302a may be disposed in the central area I, and the valve plate 302a is connected to the chamber wall 201 corresponding to the central area I, so that the pulsed jet beam in the mixing chamber 101 is difficult to enter the through hole 111 in the central area I, and therefore, the inner side wall of the through hole 111 in the central area I is not cleaned; meanwhile, a corresponding valve plate 302c is arranged in the edge area iii, and the valve plate 302c is connected with the chamber wall 201 in the edge area iii, so that the pulse jet beam in the mixing chamber 101 is difficult to enter the through hole 111 in the edge area iii, and therefore, the inner side wall of the through hole 111 in the edge area iii is not cleaned.
Referring to fig. 9, when the edge area iii needs to be cleaned and the central area I and the peripheral area ii do not need to be cleaned, a corresponding valve plate 302a may be disposed in the central area I, and the valve plate 302a is connected to the chamber wall 201 corresponding to the central area I, so that the pulsed jet beam in the mixing chamber 101 is difficult to enter the through hole 111 of the central area I, and therefore, the inner side wall of the through hole 111 in the central area I is not cleaned; meanwhile, a corresponding valve plate 302b is arranged in the peripheral area II, and the valve plate 302b is connected with the chamber wall 201 of the peripheral area II, so that the pulse jet beam in the mixing chamber 101 is difficult to enter the through hole 111 of the peripheral area II, and therefore, the inner side wall of the through hole 111 in the peripheral area II is not cleaned.
The materials of the valve plate of the embodiment shown in fig. 2 and the valve plate of the embodiment shown in fig. 7 to 9 include: plastic sheets, in particular, for example: the valve plate is made of polypropylene plastic plates. Because the polypropylene has the characteristics of better acid resistance, alkali resistance and long-time soaking resistance, the polypropylene is used as the valve plate, and the valve plate is not easy to deform after being soaked in the pulse jet beam for a long time, so that the service life of the cleaning device is prolonged.
The embodiment of fig. 2, and the embodiments of fig. 7-9 illustrate the partitioning of a gas showerhead in the sense that: when a cleaning area needs cleaning treatment, and other cleaning areas do not need cleaning treatment, the pulse jet beam is only concentrated in the cleaning area which needs cleaning, and the cleaning area which needs cleaning is smaller than the whole gas spray head, so that the uniformity of the pressure of the pulse jet beam in the cleaning area which needs cleaning is higher, and the uniformity of the removal of pollutants on the inner side walls of all through holes in the cleaning area is higher.
In fact, the semiconductor component may be other semiconductor components besides the gas shower head described above, as will be described in detail below:
Referring to fig. 10, the semiconductor device provided by the present invention is a Capacitive Coupled Plasma (CCP) reaction device, the capacitive coupled plasma reaction device comprising: the vacuum reaction chamber 401, a gas shower head 420 is disposed in the vacuum reaction chamber 401, the gas shower head 420 is connected to a gas supply device 430, and the gas supply device 430 is used for delivering the reaction gas to the vacuum reaction chamber through a gas pipeline 425 and simultaneously serves as an upper electrode of the vacuum reaction chamber. A susceptor 410 disposed opposite to the gas shower head 420 is disposed in the reaction chamber, and the susceptor 410 is used to support and fix the substrate W to be processed during the process. The susceptor 410 also serves as a lower electrode of the vacuum reaction chamber, and a reaction region is formed between the upper electrode and the lower electrode. At least one rf power source 450 is applied to one of the upper electrode and the lower electrode through a matching network 452, and an rf electric field is generated between the upper electrode and the lower electrode, so as to dissociate the reactive gas into plasma, wherein the plasma contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals, and the like, and the active particles can react with the surface of the substrate W to be processed in various physical and chemical ways, so that the shape of the surface of the substrate W to be processed is changed, and the etching process is completed.
The capacitively coupled plasma reaction device further includes: the mounting substrate 422 is disposed on the upper portion of the gas shower head 420, a mounting through hole 421 is disposed in the mounting substrate 422, and the mounting through hole 421 is communicated with a through hole 424 in the gas shower head 420. Further, since the temperature of the mounting substrate 422 needs to be controlled, a heater and a cooling channel for transferring the cooling liquid are further provided in the mounting substrate 422. In addition, a base cooling channel 460 is further disposed in the base 410, and the base cooling channel 460 is used for conveying a cooling liquid to cool the base 410, and a heat transfer channel is further disposed in the base 410, and is used for conveying a heat-conducting gas, for example: helium for controlling the temperature of the substrate W to be processed.
In this embodiment, the semiconductor component may be: at least one of the gas lines 425, the gas showerhead 420, the mounting substrate 422, or the susceptor 410, and accordingly, the through holes cleaned are the gas lines 425, the cooling passages or mounting through holes 421 in the mounting substrate 422, the through holes 424 in the gas showerhead 420, the susceptor cooling passages 460 in the susceptor 410, or the heat transfer passages.
Referring to fig. 11, the semiconductor device provided by the present invention is an Inductively Coupled Plasma (ICP) reaction apparatus, including: the vacuum reaction chamber 501, the side wall of the vacuum reaction chamber 501 is provided with a liner 520, and the liner 520 is provided with a gas nozzle 503. An insulating window 517 is arranged at the top of the vacuum reaction chamber 501, the inductive coupling coil 515 is connected to the insulating window 517, and a radio frequency power source 518 applies radio frequency voltage to the inductive coupling coil 515 through a radio frequency matching network 516. The rf power of the rf power source 518 drives the inductive coupling coil 515 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas in the reaction chamber is ionized to generate plasma. A susceptor 510 is disposed at the bottom of the vacuum reaction chamber 501, and the susceptor 510 is used to support and fix the substrate W to be processed during the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can react with the surface of the substrate W to be processed in various physical and chemical ways, so that the appearance of the surface of the substrate W to be processed is changed, and the etching process is completed.
The base 510 is further provided with a base cooling channel 560, the base cooling channel 560 is used for conveying cooling liquid to cool the base 510, and the base 510 is further provided with a heat transfer channel, the heat transfer channel is used for conveying heat-conducting gas, for example: helium for controlling the temperature of the substrate W to be processed.
In this embodiment, the semiconductor component may be: at least one of the nozzle 503 or the susceptor 510, respectively, the through holes cleaned are through holes in the nozzle 503, susceptor cooling channels 560 in the susceptor 410, or heat transfer channels.
When the through hole is used for conveying cooling liquid, after the through hole is operated for a period of time, the inner side wall of the through hole is easy to generate ferric oxide pollutants, at the moment, when the pollutants on the inner side wall of the through hole are cleaned, weak acid liquid can be selected, and pulse jet beams formed by the liquid have corrosion effects on the pollutants besides forming high-frequency water hammer striking force and erosion force, so that the pollutants on the inner side wall of the through hole are removed.
Correspondingly, the invention also provides a method for cleaning semiconductor parts by using the cleaning device, referring to figure 12,
Step S1: providing the cleaning device;
Step S2: providing a semiconductor part, fixing the semiconductor part and a cleaning device together, and enabling an outlet of the cleaning device to correspond to a through hole of the semiconductor part;
Step S3: delivering liquid from the liquid source into the mixing chamber; the pressure of the compressed gas entering the mixing cavity is controlled to rise and fall through the pulse pressure controller, so that the compressed gas entering the mixing cavity is mixed with the liquid to form a pulse jet beam, and the pulse jet beam enters the through hole from an outlet of the mixing cavity so as to remove pollutants on the inner side wall of the through hole.
The pressure lifting range of the pulse pressure controller is as follows: the pressure lifting range of the pulse pressure controller is larger than 10 psi-3000 psi, so that the pressure lifting range of the compressed gas is larger, and then the water hammer striking force and the erosion force of a pulse jet beam formed by mixing the compressed gas and liquid are larger, thereby being beneficial to removing pollutants on the inner side wall of the through hole.
The pulse frequency of the pulse voltage controller is as follows: the pulse frequency of the pulse voltage controller is higher between 10KHz and 1000KHz, which is beneficial to the formation of pulse jet beams by compressed gas and liquid.
When the liquid source comprises: and when the hot liquid source and the cold liquid source are used, the temperature range of the hot liquid source is as follows: 60-100 ℃; the temperature range of the cold liquid source is as follows: 0-30 ℃.
The hot liquid and the cold liquid are alternately input into the mixing cavity; the conveying time of the hot liquid is as follows: the conveying time of the cold liquid is 10 seconds to 2 minutes, and the conveying time of the cold liquid is as follows: 10 seconds to 2 minutes.
When the cleaning device further comprises at least one sealing ring, the sealing ring is arranged between the chamber wall of the mixing chamber and the semiconductor part, and the sealing ring is used for dividing the plurality of through holes into at least two cleaning areas; the valves are used for controlling the communication between the through holes and the outlets in each cleaning area; when the valve comprises a valve plate arranged in the mixing cavity and a driver for driving the valve plate, when the through hole of one cleaning area needs to be cleaned and other cleaning areas do not need to be cleaned, the valve plate of the cleaning area which does not need to be cleaned is attached to the cavity wall by the driver, so that the outlet of the cleaning area is not communicated with the through hole, and meanwhile, a gap is arranged between the valve plate of the cleaning area which needs to be cleaned and the cavity wall, so that a pulse jet beam can enter the outlet along the boundary of the valve plate, and then enter the through hole to clean pollutants on the inner side wall of the through hole.
When the valve is a valve plate, the valve plate is detachably connected with the chamber wall, when a certain cleaning area does not need to clean a through hole, the valve plate corresponding to the cleaning area is connected with the chamber wall, so that an outlet of the cleaning area is not communicated with the through hole, and when another cleaning area needs to clean the through hole, the cleaning area is not provided with the valve plate; when the through holes of different cleaning areas need to be cleaned, the shape of the valve plate is the same as that of the areas which do not need to be cleaned by replacing the different valve plates.
In summary, the pulse pressure controller can control the pressure rise and fall of the compressed gas entering the mixing cavity, so that the compressed gas and the liquid flow provided by the liquid source are mixed together in the mixing cavity, a discontinuous or 'bullet beam' type vortex high-frequency pulse jet beam is provided, and the pulse jet beam forms high-frequency water hammer striking force and erosion force on the inner wall of the through hole, so that the cleaning effect on pollutants on the inner wall of the through hole is improved.
FIG. 13 is a scanning electron microscope image of the invention before cleaning the through holes; FIG. 14 is a scanning electron microscope image of the invention after cleaning the through holes.
Referring to fig. 13, both the left and right of fig. 13 are schematic cross-sectional structures of the semiconductor component cleaning front along the depth direction of the through hole 111, wherein the left side of fig. 13 is for observing the distribution of the contaminants 200 on the inner sidewall of the through hole 111, and the right side of fig. 13 is for observing the distribution profile of the contaminants 200 on the inner sidewall of the through hole 111, and the through hole 111 is filled with the curing glue 300.
Specifically, as can be seen from the left-hand side of fig. 13, the inner sidewall of the through hole 111 of the semiconductor component 110 is attached with the contaminant 200, and as can be seen from the right-hand side of fig. 13, the contaminant layer 200 covers the inner sidewall of the through hole 111.
Referring to fig. 14, both the left and right of fig. 14 are schematic cross-sectional structures of the semiconductor component along the depth direction of the through hole 111 after cleaning, wherein the left side of fig. 14 is for observing the distribution of the contaminants 200 on the inner sidewall of the through hole 111, and the right side of fig. 14 is for observing the distribution profile of the contaminants 200 on the inner sidewall of the through hole 111, and the through hole 111 is filled with the curing glue 300.
Specifically, as can be seen from the left-hand side of fig. 14, the semiconductor component 110 has no contaminants 200 on the inner side walls of the through holes 111, while as can be seen from the right-hand side of fig. 14, the inner side walls of the through holes 111 have no contamination layer 200 attached. In fig. 14, the left and right drawings can see that the inner side wall of the through hole 111 is flat and smooth, that is: when the cleaning device is used for removing the pollutants on the inner side wall of the through hole 111, the cleaning device is clean to remove, and the substrate of the inner side wall body of the through hole 111 is not damaged.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (20)
1. A cleaning apparatus for a semiconductor component, the semiconductor component including opposing first and second surfaces, the semiconductor component having a through-hole extending through the first and second surfaces, comprising:
The mixing cavity comprises an outlet, and the semiconductor component is connected with the mixing cavity so that the outlet corresponds to the through hole;
a liquid source for delivering liquid into the mixing chamber through a liquid delivery conduit;
A compressed gas source for delivering compressed gas into the mixing chamber through a compressed gas passage;
the pulse pressure controller is used for controlling the pressure rise and fall of the compressed gas entering the mixing cavity, so that the compressed gas and the liquid are mixed in the mixing cavity to form a pulse jet beam, and the pulse jet beam enters the through hole from an outlet of the mixing cavity to clean the inner side wall of the through hole.
2. The cleaning apparatus for semiconductor components as set forth in claim 1, wherein said semiconductor components include: at least one of a gas line, a mounting substrate, a gas showerhead, a nozzle, or a base; the through holes are gas channels in the mounting substrate, the gas spray header, the nozzle or the base; or alternatively
The through holes are as follows: cooling fluid passages in the mounting substrate or susceptor.
3. The semiconductor component cleaning apparatus of claim 1, wherein the liquid source comprises: water, weak acid or weak base.
4. The semiconductor component cleaning apparatus of claim 1, wherein the compressed gas comprises: at least one of compressed air, nitrogen, argon, oxygen, and ozone.
5. The semiconductor component cleaning apparatus of claim 1, wherein the liquid source comprises: a hot liquid source and a cold liquid source; the liquid delivery conduit comprises: a hot liquid delivery conduit, a cold liquid delivery conduit, and a liquid transfer channel; the cleaning device for semiconductor parts further includes: and the two ends of the hot liquid conveying pipeline are respectively connected with the hot liquid source and the alternating valve, the two ends of the cold liquid conveying pipeline are respectively connected with the cold liquid source and the alternating valve, and the two ends of the liquid conveying channel are respectively connected with the alternating valve and the mixing cavity.
6. The cleaning apparatus for semiconductor parts according to claim 1, wherein when the number of the through holes is plural, the number of the through holes is the same as the number of the outlets, and the through holes are in one-to-one correspondence with the outlets; further comprises: at least one sealing ring is arranged between the chamber wall of the mixing chamber and the semiconductor component and is used for dividing the plurality of through holes into at least two cleaning areas.
7. The semiconductor component cleaning apparatus of claim 6, further comprising: and the valve is used for controlling the communication between the through holes and the outlets in each cleaning area.
8. The semiconductor component cleaning apparatus of claim 7, wherein the valve comprises: the valve plate and the driver are arranged in the mixing cavity, the driver is used for driving the valve plate to move, when the valve plate is attached to the cavity wall, the through hole is not communicated with the outlet, when a gap exists between the valve plate and the cavity wall, the through hole is communicated with the outlet, and the pulse jet beam enters the through hole from the outlet of the mixing cavity to clean the inner side wall of the through hole.
9. The semiconductor component cleaning apparatus according to claim 7, wherein the valve is a valve plate, the valve plate is detachably connected to the chamber wall, the valve plate corresponding to a different cleaning region has the same shape as the cleaning region, when one of the cleaning regions is not required to perform cleaning, the valve plate corresponding to the cleaning region is connected to the chamber wall so that the outlet in the cleaning region is not communicated with the through hole, and when the other cleaning region is required to perform cleaning, the valve plate is not provided, and the outlet in the cleaning region is communicated with the through hole.
10. The semiconductor component cleaning apparatus according to claim 8 or 9, wherein gaps are provided between the valve plates corresponding to different cleaning regions, and the gaps are located between adjacent outlets, and the size of the gaps is smaller than the distance between the adjacent outlets.
11. A cleaning apparatus for semiconductor components as claimed in claim 8 or 9, wherein the material of the valve plate comprises: a plastic plate.
12. The semiconductor component cleaning apparatus of claim 6, wherein the chamber wall and the semiconductor component further comprise: and the detachable connecting part is used for realizing the connection between the semiconductor part and the mixing cavity.
13. The semiconductor component cleaning apparatus of claim 1, wherein the semiconductor component material comprises: aluminum alloy, anodized aluminum, stainless steel or ceramic; the inner side wall of the through hole is attached with pollutants, and the pollutants comprise: at least one of rare earth oxides, fluorides, oxyfluorides, aluminum fluoride, carbon-containing polymers, or iron oxide.
14. A method of cleaning semiconductor components, comprising:
providing a cleaning device according to claim 1;
Providing a semiconductor part, connecting the semiconductor part with a cleaning device, and enabling an outlet of the cleaning device to correspond to a through hole of the semiconductor part;
delivering liquid from the liquid source into the mixing chamber;
The pressure of the compressed gas entering the mixing cavity is controlled to rise and fall through the pulse pressure controller, so that the compressed gas entering the mixing cavity and the liquid are mixed together to form a pulse jet beam, and the pulse jet beam enters the through hole from the outlet of the mixing cavity to clean the inner side wall of the through hole.
15. The method of cleaning semiconductor parts of claim 14, wherein the pressure rise and fall range of the pulse press is: 10 psi-3000 psi.
16. The method of cleaning semiconductor parts of claim 14, wherein the pulse rate of the pulse controller is: 10KHz-1000KHz.
17. The method of cleaning semiconductor parts of claim 14, wherein when the liquid source comprises: and when the hot liquid source and the cold liquid source are used, the temperature range of the hot liquid source is as follows: 60-100 ℃; the temperature range of the cold liquid source is as follows: 0-30 ℃.
18. The method of cleaning semiconductor parts of claim 17, wherein the hot liquid and cold liquid are alternately introduced into the mixing chamber; the conveying time of the hot liquid is as follows: 10 seconds to 2 minutes; the conveying time of the cold liquid is as follows: 10 seconds to 2 minutes.
19. The method of cleaning semiconductor parts according to claim 14, wherein when the cleaning apparatus further comprises at least one sealing ring disposed between the chamber wall of the mixing chamber and the semiconductor parts, the sealing ring is used to divide the plurality of through holes into at least two cleaning areas; the valves are used for controlling the communication between the through holes and the outlets in each cleaning area; when the valve comprises a valve plate arranged in the mixing cavity and a driver for driving the valve plate, when the through hole of one cleaning area needs to be cleaned and other cleaning areas do not need to be cleaned, the valve plate of the cleaning area which does not need to be cleaned is attached to the cavity wall by the driver, so that the outlet of the cleaning area is not communicated with the through hole, and meanwhile, a gap is arranged between the valve plate of the cleaning area which needs to be cleaned and the cavity wall, so that a pulse jet beam can enter the outlet along the boundary of the valve plate, and then enter the through hole to clean the inner side wall of the through hole.
20. The method of cleaning semiconductor parts as claimed in claim 19, wherein when the valve is a valve plate, the valve plate is detachably connected to the chamber wall, when a cleaning region does not need to clean the through hole, the valve plate corresponding to the cleaning region is connected to the chamber wall, the outlet of the cleaning region is not communicated with the through hole, and when another cleaning region does need to clean the through hole, the cleaning region is not provided with the valve plate; when the through holes of different cleaning areas need to be cleaned, the shape of the valve plate is the same as that of the areas which do not need to be cleaned by replacing the different valve plates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211604287.XA CN118180013A (en) | 2022-12-13 | 2022-12-13 | Cleaning device for semiconductor parts and cleaning method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211604287.XA CN118180013A (en) | 2022-12-13 | 2022-12-13 | Cleaning device for semiconductor parts and cleaning method thereof |
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| CN118180013A true CN118180013A (en) | 2024-06-14 |
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| CN202211604287.XA Pending CN118180013A (en) | 2022-12-13 | 2022-12-13 | Cleaning device for semiconductor parts and cleaning method thereof |
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