CN118156317A - Millimeter wave switching device based on back-to-back double Schottky structure - Google Patents
Millimeter wave switching device based on back-to-back double Schottky structure Download PDFInfo
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- CN118156317A CN118156317A CN202410048904.5A CN202410048904A CN118156317A CN 118156317 A CN118156317 A CN 118156317A CN 202410048904 A CN202410048904 A CN 202410048904A CN 118156317 A CN118156317 A CN 118156317A
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Abstract
The invention relates to a millimeter wave switching device based on a back-to-back double Schottky structure, which sequentially comprises a Schottky millimeter wave device layer, a substrate layer and a common-ground metal layer from top to bottom; the Schottky millimeter wave device layer comprises a feed transmission line, a Schottky electrode, a semiconductor layer and an ohmic electrode; a channel is prepared in the middle of the Schottky electrode to form a capacitive structure, and a semiconductor layer grows in the channel; the ohmic electrode is connected with the semiconductor layer; the feed transmission line is respectively connected with the left and right Schottky electrodes at the two sides of the channel and finally connected with the left and right Schottky electrodes at the two sides of the channel, so that the left and right Schottky electrodes at the two sides of the channel are at the same potential during feed. The process related to the preparation of the Schottky diode can be carried out at room temperature, and has the characteristics of energy conservation, material deterioration avoidance, material waste reduction, wide application range, low cost and the like.
Description
Technical Field
The invention relates to a millimeter wave switching device based on a back-to-back double Schottky structure, and belongs to the field of semiconductor device structures and integrated circuits.
Background
Schottky diodes, also known as schottky barrier diodes, are a special type of semiconductor diode. The structure of the diode is different from that of a common PN junction diode, the anode of the diode is in metal contact, and the cathode of the diode is made of semiconductor material. The schottky diode has significant advantages. They have very fast switching speeds because they have no PN junctions and no internal complex charges, which makes them well suited for use in high frequency applications such as Radio Frequency (RF) communication devices. Schottky diodes have low reverse leakage current, which means they have lower reverse on-resistance, reducing power consumption and improving efficiency. In addition, their turn-on voltages are typically low, allowing for faster turn-on currents when forward biased. Schottky diodes also have good high temperature performance and are therefore suitable for use in high temperature environments. These characteristics have led to the widespread use of schottky diodes in many fields, especially in applications requiring fast switching, low power consumption and high frequency and high speed performance. They play an important role in the fields of radio frequency electronics, microwave electronics, power electronics, etc.
Millimeter waves are a part of the electromagnetic spectrum with frequencies between microwave and infrared. Millimeter wave features include extremely short wavelengths and high frequencies, so it has the potential for high bandwidth and high data transmission speeds. The application of the frequency band comprises millimeter wave communication, radar system, wireless network, medical imaging, safety scanning and other fields, provides important support for rapid data transmission, high-resolution imaging and accurate detection, and plays a key role in future 5G and 6G communication technologies.
The millimeter wave switch is high-frequency circuit switch equipment for radio frequency and millimeter wave frequency bands, and is mainly used in the fields of wireless communication, radar systems, satellite communication, millimeter wave radio frequency front-end modules and the like. Millimeter wave switches have several key features including low insertion loss, fast switching speeds, and high operating frequencies. They typically employ microelectronic packaging techniques to ensure stability and accuracy of the high frequency signals. These switches can switch signals in nanosecond or sub-nanosecond time, and are very suitable for applications requiring high-speed data transmission and low delay. Millimeter wave switches play a key role in 5G communications, high resolution radar, millimeter wave imaging, and wireless communications systems, helping to achieve faster, high capacity, and high reliability communications and transmissions.
The design of millimeter wave switches presents challenges because high precision processes and materials are required to fabricate millimeter wave switches to accommodate the high frequency requirements. This generally increases manufacturing costs and may require special materials and processes to cope with the higher frequency, smaller size requirements. Higher stability and reliability are required for switches at high frequencies. Factors such as temperature variation, electromagnetic interference, material characteristic variation and the like can influence the performance of the millimeter wave switch. Ensuring long-term stability of the switch under different environmental and operating conditions is a challenge. In addition, the manufacturing technology may be limited in millimeter wave frequency range, especially for circuit board manufacturing, packaging process, etc., and higher precision and special process are required to meet the requirement of high frequency.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a millimeter wave switching device based on a back-to-back double Schottky structure
Term interpretation:
1. CPW, coplanar waveguide, coplanar waveguide, also known as coplanar microstrip transmission line.
2. The artificial surface plasmon transmission line is a novel ultrathin transmission line which is manufactured on a medium substrate, has a sub-wavelength fold structure, has the locality of a deep sub-wavelength field and can carry out common transmission.
3. LCP, liquid Crystal Polymer, also known as liquid crystal polymer, is a novel polymeric material.
4. IGZO, indium gallium zinc oxide, abbreviation for indium gallium zinc oxide.
The invention adopts the following technical scheme:
the millimeter wave switching device based on the back-to-back double Schottky structure sequentially comprises a Schottky millimeter wave circuit device layer, a substrate layer and a common-ground metal layer from top to bottom;
The Schottky millimeter wave circuit device layer comprises a feed transmission line, a Schottky electrode, a semiconductor layer and an ohmic electrode; a channel is prepared in the middle of the Schottky electrode to form a capacitive structure, and a semiconductor layer grows in the channel; the ohmic electrode is connected with the semiconductor layer; the feed transmission line is respectively connected with the left and right Schottky electrodes at the two sides of the channel and finally connected with the left and right Schottky electrodes at the two sides of the channel, so that the left and right Schottky electrodes at the two sides of the channel are at the same potential during feed.
According to the invention, the feed transmission line is preferably a microstrip line, CPW or artificial surface plasmon transmission line; .
Further preferably, the feed transmission line and the schottky electrode are microstrip lines.
According to the invention, the Schottky electrode is a microstrip line or a CPW or a signal electrode of an artificial surface plasmon transmission line;
further preferably, the schottky electrode is a signal electrode of a microstrip line.
According to the invention, the semiconductor layer is preferably an IGZO active layer or a GaN active layer or a SiC active layer or a GaAs active layer;
Further preferably, the semiconductor layer is an IGZO active layer;
and the metal in the left Schottky electrode and the right Schottky electrode at the two sides of the channel are combined with the IGZO active layer to form a Schottky barrier, so that a back-to-back double Schottky structure is formed.
According to the present invention, it is preferable that the size of the trench covered by the IGZO active layer is less than 10 μm.
It is further preferable that the size of the channel covered by the IGZO active layer is 4 μm.
According to the invention, preferably, the material of the schottky electrode comprises Ti, au, pd or Cr, au and Pd from bottom to top;
Further preferably, the schottky electrode comprises Ti, au and Pd from bottom to top;
Preferably, the Ti thickness is 10nm, the Au thickness is 200nm, and the Pd thickness is 40nm.
According to a preferred embodiment of the present invention, the substrate layer is a flexible substrate or a rigid substrate.
Further preferably, the substrate layer is LCP (Liquid Crystal Polymer) substrates.
According to the invention, preferably, the common-ground metal layer material is Au or Ti or Cr;
Further preferably, the common-ground metal layer material is Au;
Preferably, the thickness of Au is 100nm.
The beneficial effects of the invention are as follows:
1. The process related to the preparation of the Schottky diode can be carried out at room temperature, and has the characteristics of energy conservation, material deterioration avoidance, material waste reduction, wide application range, low cost and the like.
2. The preferred flexible materials of the present invention make them very portable while accommodating a variety of shapes and applications, and can be used in wearable devices, curled displays, and flexible electronics. Flexible devices are generally lighter than traditional rigid devices, which helps to reduce the overall weight of the device, making it more suitable for mobile devices, aerospace, and military applications. Flexible devices have a high resistance to shock and vibration because they are not easily broken or damaged. This makes its use in harsh environments more viable. The flexible electronics can use thin film batteries and low power electronics to achieve a more energy efficient design, extending battery life.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.
Fig. 1 is a schematic diagram of a top surface structure of a millimeter wave switching device based on a back-to-back dual schottky structure;
Fig. 2 is a schematic diagram of a perspective structure of a millimeter wave switching device based on a back-to-back dual schottky structure;
Fig. 3 is a top view of a back-to-back dual schottky structure;
fig. 4 is a cross-sectional view of a back-to-back dual schottky structure;
The device comprises a Schottky millimeter wave device layer 1, a substrate layer 2, a common ground metal layer 3.
Detailed Description
In order to better understand the technical solutions in the present specification, the following description will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the implementation of the present specification, but not limited thereto, and the present invention is not fully described and is according to the conventional technology in the art.
Example 1
The millimeter wave switching device based on the back-to-back double Schottky structure sequentially comprises a Schottky millimeter wave device layer 1, a substrate layer 2 and a common-ground metal layer 3 from top to bottom;
The Schottky millimeter wave device layer 1 comprises a feed transmission line, a Schottky electrode, a semiconductor layer and an ohmic electrode; a channel is prepared in the middle of the Schottky electrode to form a capacitive structure, and a semiconductor layer grows in the channel; the ohmic electrode is connected with the semiconductor layer; the feed transmission line is respectively connected with the left and right Schottky electrodes at the two sides of the channel and finally connected with the left and right Schottky electrodes at the two sides of the channel, so that the left and right Schottky electrodes at the two sides of the channel are at the same potential during feed.
Example 2
The millimeter wave switching device based on the back-to-back dual schottky structure according to embodiment 1 is different in that:
The feed transmission line and the Schottky electrode are microstrip lines. The feed transmission line and the Schottky electrode form of the invention use a microstrip line structure to realize the feed function of the Schottky millimeter wave switch by the feed transmission line. The feed transmission line and the schottky electrode of the present invention can use, but are not limited to, microstrip line structures, and other forms of transmission lines, such as CPW, artificial surface plasmons, etc., can be used.
The semiconductor layer is an IGZO active layer; the semiconductor layer may be, but not limited to, IGZO, and other semiconductors that can form schottky barriers may be used.
The metal in the left and right Schottky electrodes at two sides of the channel is combined with the IGZO active layer to form a Schottky barrier, so that a back-to-back double-Schottky structure is formed. To control the transmission of signals.
In order to ensure that the IGZO active layer at the channel between the microstrip line structures is in a depletion state under the condition of zero bias voltage, the size of the channel, i.e. the channel covered by the IGZO active layer, is smaller than 10 μm.
The microstrip line comprises Ti, au and Pd from bottom to top. Ti is used as an adhesion layer for improving the bonding strength of the metal and the substrate. The metal Au serves as a main signal transmission layer and has excellent conductivity. The high work function metal Pd, after removing the excess photoresist and forming an oxygen rich environment using oxygen plasma bombardment, forms a schottky barrier in combination with the IGZO active layer. The schottky electrode may use, but is not limited to, a high work function metal Pd, and other metals that may form a schottky barrier with IGZO may be used.
The substrate layer 2 is a flexible substrate or a rigid substrate.
The common ground metal layer 3 is made of Au.
The working principle of the millimeter wave switching device based on the back-to-back double Schottky structure is as follows:
After the forward bias voltage is applied, the height of the Schottky barrier is reduced, carriers in the IGZO active layer can move towards the positive voltage direction, namely, the ohmic electrode moves towards the Schottky electrode, the free carrier concentration of the IGZO active layer at the channel of the microstrip line structure is increased, and the conductivity at the Schottky electrode is also increased. The channels of the microstrip line structure are thus shorted, so that signals are transmitted.
After the reverse bias voltage is applied, the height of the Schottky barrier is increased, carriers in the IGZO active layer are difficult to move in the positive voltage direction, namely, the ohmic electrode moves towards the Schottky electrode, the free carrier concentration of the IGZO active layer at the channel of the microstrip line structure is very low, and the conductivity at the Schottky electrode is very low. Thus, the channel of the microstrip line structure is opened, making it difficult to transmit signals.
Example 3
The millimeter wave switching device based on the back-to-back dual schottky structure according to embodiment 2 is different in that:
the channel covered by the IGZO active layer had a size of 4 μm.
Preferably, the Ti thickness is 10nm, the Au thickness is 200nm, and the Pd thickness is 40nm.
The substrate layer 2 is LCP (Liquid Crystal Polymer) substrates. LCP substrates are a novel class of polymers with outstanding properties. Has the characteristics of excellent heat stability, heat resistance, chemical resistance and the like. The substrate layer 2 of the present invention may be, but not limited to, a flexible substrate such as LCP, and a rigid substrate such as Si.
Preferably, the thickness of Au is 100nm.
The invention is not exhaustive and can be seen in the prior art.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The millimeter wave switching device based on the back-to-back double Schottky structure is characterized by sequentially comprising a Schottky millimeter wave device layer, a substrate layer and a common-ground metal layer from top to bottom;
The Schottky millimeter wave device layer comprises a feed transmission line, a Schottky electrode, a semiconductor layer and an ohmic electrode; a channel is prepared in the middle of the Schottky electrode to form a capacitive structure, and a semiconductor layer grows in the channel; the ohmic electrode is connected with the semiconductor layer; the feed transmission line is respectively connected with the left and right Schottky electrodes at the two sides of the channel and finally connected with the left and right Schottky electrodes at the two sides of the channel, so that the left and right Schottky electrodes at the two sides of the channel are at the same potential during feed.
2. The millimeter wave switching device according to claim 1, wherein the feed transmission line and the schottky electrode are microstrip lines.
3. The millimeter wave switching device based on the back-to-back double schottky structure according to claim 1, wherein the semiconductor layer is an IGZO active layer;
and the metal in the left Schottky electrode and the right Schottky electrode at the two sides of the channel are combined with the IGZO active layer to form a Schottky barrier, so that a back-to-back double Schottky structure is formed.
4. The millimeter wave switching device of claim 1, wherein the size of the trench covered by the IGZO active layer is less than 10 μm.
5. The millimeter wave switching device based on back-to-back dual schottky structure of claim 1, wherein the size of the channel covered by IGZO active layer is 4 μm.
6. The millimeter wave switching device based on the back-to-back double schottky structure according to claim 1, wherein the microstrip line is made of Ti, au, pd from bottom to top.
7. The millimeter wave switching device of claim 6, wherein Ti is 10nm thick, au is 200nm thick, and pd is 40nm thick.
8. The millimeter wave switching device of claim 1, wherein said substrate layer is a flexible substrate or a rigid substrate.
9. The millimeter wave switching device of claim 1, wherein said substrate layer is an LCP substrate.
10. The millimeter wave switching device based on the back-to-back double schottky structure according to claim 1, wherein the common ground metal layer material is Au;
Preferably, the thickness of Au is 100nm.
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| Publication Number | Publication Date |
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| CN118156317A true CN118156317A (en) | 2024-06-07 |
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