CN118136485A - Air inlet device and plasma etching machine - Google Patents
Air inlet device and plasma etching machine Download PDFInfo
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- CN118136485A CN118136485A CN202410558085.9A CN202410558085A CN118136485A CN 118136485 A CN118136485 A CN 118136485A CN 202410558085 A CN202410558085 A CN 202410558085A CN 118136485 A CN118136485 A CN 118136485A
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 68
- 239000012495 reaction gas Substances 0.000 claims abstract description 47
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 14
- 230000005593 dissociations Effects 0.000 claims abstract description 14
- 210000001503 joint Anatomy 0.000 claims abstract description 13
- 238000007789 sealing Methods 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Abstract
The invention provides an air inlet device and a plasma etching machine, and belongs to the technical field of plasma manufacturing equipment. The air inlet device is provided with two layers of dielectric windows, and the process gas can be dissociated once in an air flow channel between the two layers of dielectric windows, and then the dissociated process gas enters the process cavity; thereby increasing the dissociation energy of the process gas. The air inlet device is used for introducing process gas into a process cavity of the plasma etching machine and comprises an upper medium window and a lower medium window; the upper medium window and the lower medium window are oppositely arranged, and a closed air flow channel is formed between the butt joint surfaces of the upper medium window and the lower medium window; a reaction gas inlet is arranged on the upper medium window or the lower medium window; the reaction gas inlet is communicated with the gas flow channel through an edge gas mixing groove surrounding the periphery of the gas flow channel; and the middle position of the lower medium window corresponding to the airflow channel is provided with more than one reaction gas outlet communicated with the process cavity.
Description
Technical Field
The invention relates to an air inlet device, in particular to an air inlet device for a plasma etching machine, and belongs to the technical field of plasma manufacturing equipment.
Background
Plasma etching is one of the most common forms in dry etching, and the principle is that a gas exposed to an electron region forms plasma, so that ionized gas generated by the plasma is ionized and gas composed of high-energy electrons is released, thereby forming plasma or ions, and when ionized gas atoms are accelerated by an electric field, enough force is released to tightly adhere materials or etch surfaces with surface expelling force.
The existing plasma etcher is generally provided with a dielectric window at the upper part of a process cavity, an air inlet is arranged at the middle position of the dielectric window, and process gas directly enters the process cavity from the air inlet and then is dissociated in the process cavity; the dissociation energy of the process gas is low by adopting the gas inlet structure, and the obtained plasma density is generally only 10 11CM-3.
Disclosure of Invention
In view of this, the present invention provides an air inlet device, which is provided with two dielectric windows, and an air flow channel is formed between the two dielectric windows, so that a process gas is dissociated in the air flow channel between the two dielectric windows at one time, and the dissociated process gas enters the process chamber again, thereby improving the dissociation energy of the process gas.
The technical scheme of the invention is as follows: an air inlet device is used for introducing process gas into a process cavity of a plasma etching machine and comprises an upper medium window and a lower medium window;
The upper medium window and the lower medium window are oppositely arranged, and a closed air flow channel is formed between the butt joint surfaces of the upper medium window and the lower medium window; a reaction gas inlet is arranged on the upper medium window or the lower medium window; after the process gas enters the gas flow channel from the reaction gas inlet, primary dissociation is carried out in the gas flow channel;
the reaction gas inlet is communicated with the gas flow channel through an edge gas mixing groove surrounding the periphery of the gas flow channel;
And the middle position of the lower medium window corresponding to the airflow channel is provided with more than one reaction gas outlet communicated with the process cavity, and the process gas after primary dissociation flows out from the reaction gas outlet into the process cavity to carry out secondary dissociation in the process cavity.
As a preferred mode of the present invention, the width of the edge gas mixing groove is larger than the width of the reaction gas inlet.
As a preferable mode of the invention, the depth of the air flow channel is 0.2 mm-10 mm.
As a preferable mode of the invention, the width of the edge gas mixing groove is 2-30 mm, and the depth of the edge gas mixing groove is 2-50 mm.
As a preferable mode of the invention, the upper dielectric window is of a disc structure with a bulge at the middle position of the lower end face; the lower dielectric window is a disc structure with a groove at the middle position of the upper end surface,
The diameter of the groove is larger than the diameter of the bulge on the lower end face of the upper dielectric window, and the depth of the groove is larger than the thickness of the bulge;
the upper medium window and the lower medium window are in butt joint with the sealing shaft, after the butt joint, the bulges at the lower end face of the upper medium window are positioned in the grooves at the upper end face of the upper medium window, and the horizontal gaps between the lower surfaces of the bulges and the upper surfaces of the grooves are used as airflow channels; the annular area between the outer circumference of the protrusion and the inner circumference of the groove serves as an edge air mixing groove.
As a preferable mode of the invention, a reaction gas inlet is arranged at the position corresponding to the edge gas mixing groove at the top of the upper medium window.
In a preferred embodiment of the present invention, a reaction gas inlet is provided at a position corresponding to the edge gas mixing groove on the side surface of the lower medium window.
As a preferable mode of the invention, the upper medium window is of a disc structure with an annular groove at the middle position of the lower end face, and the thickness of a cylindrical part inside the annular groove is smaller than that of a cylindrical part outside the annular groove;
the lower dielectric window is of a disc structure with the upper end face and the lower end face being planes;
The lower end face of the upper dielectric window is in sealing butt joint with the upper end face of the lower dielectric window; a horizontal airflow channel is formed between the lower end face of the cylindrical part inside the annular groove and the upper end face of the lower dielectric window; an annular groove at the lower end surface of the upper medium window is used as an edge gas mixing groove;
and a reaction gas inlet is arranged at the position of the top or the side surface of the upper medium window corresponding to the edge gas mixing groove.
In addition, the invention provides a plasma etching machine, which comprises a process cavity, a top cover arranged at the top opening of the process cavity and an air inlet device arranged on the top cover; the air inlet device adopts the air inlet device.
The beneficial effects are that:
(1) The air inlet device forms an air flow channel through the double-layer dielectric window, process gas firstly enters the air flow channel, the air flow channel enables the process gas to pass through an electromagnetic induction area (an influence area of an electromagnetic field formed by a radio frequency coil) in a short distance, so that the process gas can be dissociated once in the air flow channel, and the dissociated process gas flows out from a reaction gas outlet and enters a process cavity; the gas flow channel has the function of auxiliary dissociation for the process gas, so that the process gas is dissociated once before entering the process cavity, and then dissociated for the second time in the process cavity, and experiments show that the plasma density of the dissociated process gas is 10 times higher than that of the conventional gas inlet scheme, namely >10 12CM-3.
(2) In the air inlet device, an edge air mixing groove is arranged at the edge of an air flow channel, the edge air mixing groove is communicated with a reaction gas inlet, process gas entering from the reaction gas inlet flows in the edge air mixing groove, flows from the periphery of the air flow channel to the air flow channel, and flows out from a reaction gas outlet positioned in the center of the air flow channel; thereby, it can be ensured that the process gas passing through the gas flow channel can be dissociated uniformly once.
(3) The air inlet device is simple in structure and easy to process.
(4) The plasma etching machine adopts the air inlet device with the double-layer dielectric window, and the air inlet device forms an air flow channel through the double-layer dielectric window, so that the auxiliary dissociation function of the process gas can be realized, the process gas is dissociated once before entering the process cavity, and the dissociation energy of the process gas is further improved.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an air inlet device (with a reaction gas inlet at the top);
fig. 2 is another schematic structural view of the gas inlet device of the present invention (the reaction gas inlet is provided at the side);
FIG. 3 is a schematic view showing the structure of a plasma etcher having an air inlet device in embodiment 3;
Wherein: the device comprises a 1-upper medium window, a 2-lower medium window, a 3-reaction gas outlet, a 4-gas flow channel, a 5-edge gas mixing groove, a 6-reaction gas inlet, a 7-radio frequency coil, an 8-upper radio frequency emitter, a 9-process cavity, a 10-top cover, an 11-electrostatic chuck, a 12-radio frequency isolation ring and a 13-lower radio frequency emitter.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
The embodiment provides an air inlet device for introducing air into a process cavity of a plasma etching machine. As shown in fig. 1, the air inlet device comprises two dielectric windows, namely an upper dielectric window 1 and a lower dielectric window 2. The upper dielectric window 1 and the lower dielectric window 2 are arranged oppositely, and a closed airflow channel 4 is formed between the butt joint surfaces of the upper dielectric window 1 and the lower dielectric window 2.
The upper medium window 1 or the lower medium window 2 is provided with a reaction gas inlet 6 at a position corresponding to one end of the gas flow channel 4.
The reaction gas inlet 6 is communicated with the gas flow channel 4 through an edge gas mixing groove 5, the edge gas mixing groove 5 is a gas groove surrounding the periphery of the gas flow channel 4, and the width of the edge gas mixing groove 5 is larger than that of the reaction gas inlet 6. The reaction gas enters the edge gas mixing groove 5 through the reaction gas inlet 6, is dispersed to the outer edge of the gas flow channel 4 through the edge gas mixing groove 5, and then enters the gas flow channel 4 through the edge gas mixing groove 5.
As an example, the width D of the edge gas mixing groove 5 is 2mm to 30mm, and the depth H of the edge gas mixing groove 5 is 2mm to 50mm; the depth t of the air flow channel 4 is 0.2 mm-10 mm. The "depth" herein refers to the dimension in the height direction.
A reaction gas outlet 3 is arranged at the middle position of the lower medium window 2 corresponding to the gas flow channel 4; the reaction gas outlet 3 is communicated with a process cavity of the plasma etching machine; whereby the process gas enters the intermediate gas flow channel 4 from the reactant gas inlet 6 at the edge and then enters the process chamber through the reactant gas outlet 3.
As an example, more than one reaction gas outlet 3 is arranged at the middle position of the lower dielectric window 2 corresponding to the gas flow channel 4; if a central reaction gas outlet is arranged at the middle position of the lower medium window 2 corresponding to the gas flow channel 4, a plurality of reaction gas outlets are uniformly distributed at intervals along the circumference of the central reaction gas outlet.
A radio frequency coil 7 and an upper radio frequency transmitter 8 electrically connected with the radio frequency coil 7 are arranged above the upper dielectric window 1.
In this way, by arranging two layers of dielectric windows to form an airflow channel 4 and arranging an edge air mixing groove 5 at the edge of the formed airflow channel 4, the process gas flows from the periphery to the middle in the airflow channel 4; the gas flow channel 4 enables the process gas to pass through an electromagnetic induction area (namely an influence area of an electromagnetic field formed by the radio frequency coil 7) in a short distance, and the process gas is dissociated once in the gas flow channel 4 in the passing process; then the once dissociated process gas enters the process cavity through the reaction gas outlet 3 on the lower medium window 2. Namely, the gas flow channel 4 in the gas inlet device has the function of assisting in dissociation of the process gas, and can improve the dissociation energy of the process gas.
Example 2:
On the basis of the above embodiment 1, a specific structural form of the upper dielectric window 1 and the lower dielectric window 2 is given in this embodiment.
As shown in fig. 1, the upper dielectric window 1 has a disk structure with a protrusion at the middle of the lower end surface, and thus the outer peripheral surface of the upper dielectric window 1 forms a step surface. The lower dielectric window 2 is a disc structure with a groove at the middle position of the upper end face, the diameter of the groove is larger than the diameter of the bulge of the lower end face of the upper dielectric window 1, and the depth of the groove is larger than the thickness of the bulge. The upper dielectric window 1 and the lower dielectric window 2 are coaxially butted, namely, the upper dielectric window 1 is butted with the upper end face of the lower dielectric window 2 through the step face of the upper dielectric window 1, and a sealing ring is arranged on the butted face to realize sealing butt joint. After butt joint, the bulge of the lower end face of the upper dielectric window 1 is positioned in the groove of the upper end face of the lower dielectric window 2.
Because the depth of the groove is larger than the thickness of the bulge, a gap is formed between the lower surface of the bulge and the upper surface of the groove, and a horizontal slit is formed as an air flow channel 4; because the diameter of the groove is larger than that of the bulge, an annular edge gas mixing groove 5 is formed between the outer circumference of the bulge and the inner circumference of the groove.
As an example, as shown in fig. 1, a reaction gas inlet 6 is provided at a position corresponding to the edge gas mixing groove 5 at the top of the upper dielectric window 1.
As an example, as shown in fig. 2, a reaction gas inlet 6 is provided at a position corresponding to the edge gas mixing groove 5 on the side surface of the lower dielectric window 2 (i.e., on the outer circumferential surface of the lower dielectric window 2).
And more than one reaction gas outlet 3 is arranged in the middle of the lower medium window 2.
Example 3:
On the basis of the above embodiment 1, another specific structural form of the upper dielectric window 1 and the lower dielectric window 2 is given in this embodiment.
As shown in fig. 3, the upper dielectric window 1 has a disk structure with a coaxial annular groove at the lower end surface, and the thickness of the cylindrical portion inside the annular groove is smaller than the thickness of the cylindrical portion outside the annular groove.
The lower dielectric window 2 is of a disc structure with the upper end face and the lower end face being planes, and the lower end face of the upper dielectric window 1 is in sealing butt joint with the upper end face of the lower dielectric window 2; thereby forming a horizontal slit as an air flow channel 4 between the lower end surface of the cylindrical part inside the annular groove and the upper end surface of the lower dielectric window 2; the annular groove at the lower end surface of the upper medium window 1 is used as an edge air mixing groove 5.
The top of the upper medium window 1 is provided with a reaction gas inlet 6 (the side surface of the upper medium window 1 is also provided with a reaction gas inlet 6 at the position corresponding to the edge gas mixing groove 5), and the middle position of the lower medium window 2 is provided with more than one reaction gas outlet 3.
Example 4:
in this embodiment, a plasma etching machine having the air inlet device is provided.
As shown in fig. 3, the plasma etcher includes a chamber body comprising: the process chamber 9, a top cover 10 arranged at the top opening of the process chamber 9 and an air inlet device arranged in the top cover 10 (when the reaction gas inlet 6 is arranged on the side surface of the upper medium window 1 or the lower medium window 2, the side surface of the top cover 10 is provided with holes at the corresponding positions); in this example, the air intake device of the above-described embodiment 3 was used as the air intake device. The internal chamber of the process chamber 9 is the plasma generation region.
A radio frequency coil 7 and an upper radio frequency transmitter 8 electrically connected with the radio frequency coil 7 are arranged above the air inlet device; an electrostatic chuck 12 is arranged at the opening of the lower end of the process cavity 9 through a radio frequency isolation ring 11, and a lower radio frequency emitter 13 is electrically connected with the electrostatic chuck 12.
In summary, the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. An air inlet device for introducing process gas into a process cavity of a plasma etching machine, which is characterized in that: the air inlet device comprises an upper medium window and a lower medium window;
The upper medium window and the lower medium window are oppositely arranged, and a closed air flow channel is formed between the butt joint surfaces of the upper medium window and the lower medium window; a reaction gas inlet is arranged on the upper medium window or the lower medium window; after the process gas enters the gas flow channel from the reaction gas inlet, primary dissociation is carried out in the gas flow channel;
the reaction gas inlet is communicated with the gas flow channel through an edge gas mixing groove surrounding the periphery of the gas flow channel;
And the middle position of the lower medium window corresponding to the airflow channel is provided with more than one reaction gas outlet communicated with the process cavity, and the process gas after primary dissociation flows out from the reaction gas outlet into the process cavity to carry out secondary dissociation in the process cavity.
2. The gas inlet apparatus of claim 1, wherein the width of the edge gas mixing groove is greater than the width of the reactant gas inlet.
3. An air inlet device according to claim 1, wherein the depth of the air flow channel is 0.2mm to 10mm.
4. The air inlet device of claim 1, wherein the width of the edge air mixing groove is 2 mm-30 mm, and the depth of the edge air mixing groove is 2 mm-50 mm.
5. The air inlet device as set forth in any one of claims 1 to 4, wherein the upper dielectric window has a disk structure with a protrusion at a middle position of a lower end surface; the lower dielectric window is a disc structure with a groove at the middle position of the upper end surface,
The diameter of the groove is larger than the diameter of the bulge on the lower end face of the upper dielectric window, and the depth of the groove is larger than the thickness of the bulge;
the upper medium window and the lower medium window are in butt joint with the sealing shaft, after the butt joint, the bulges at the lower end face of the upper medium window are positioned in the grooves at the upper end face of the upper medium window, and the horizontal gaps between the lower surfaces of the bulges and the upper surfaces of the grooves are used as airflow channels; the annular area between the outer circumference of the protrusion and the inner circumference of the groove serves as an edge air mixing groove.
6. The gas inlet device according to claim 5, wherein a reaction gas inlet is arranged at a position corresponding to the edge gas mixing groove at the top of the upper medium window.
7. The gas inlet device according to claim 5, wherein a reaction gas inlet is arranged at a position corresponding to the edge gas mixing groove on the side surface of the lower medium window.
8. The air inlet device according to any one of claims 1 to 4, wherein the upper medium window is a disc structure having a coaxial annular groove at a lower end surface, and a thickness of a cylindrical portion inside the annular groove is smaller than a thickness of a cylindrical portion outside the annular groove;
the lower dielectric window is of a disc structure with the upper end face and the lower end face being planes;
The lower end face of the upper dielectric window is in sealing butt joint with the upper end face of the lower dielectric window; a horizontal airflow channel is formed between the lower end face of the cylindrical part inside the annular groove and the upper end face of the lower dielectric window; an annular groove at the lower end surface of the upper medium window is used as an edge gas mixing groove;
and a reaction gas inlet is arranged at the position of the top or the side surface of the upper medium window corresponding to the edge gas mixing groove.
9. The plasma etching machine is characterized by comprising a process cavity, a top cover arranged at the top opening of the process cavity and an air inlet device arranged on the top cover; the air intake device adopts the air intake device of any one of the above claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410558085.9A CN118136485B (en) | 2024-05-08 | Air inlet device and plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410558085.9A CN118136485B (en) | 2024-05-08 | Air inlet device and plasma etching machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN118136485A true CN118136485A (en) | 2024-06-04 |
| CN118136485B CN118136485B (en) | 2024-08-27 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1403627A (en) * | 2001-08-30 | 2003-03-19 | 周星工程股份有限公司 | High-density plasma chemical vapour-phase deposition equipment |
| CN101258786A (en) * | 2005-09-01 | 2008-09-03 | 松下电器产业株式会社 | Plasma processing equipment, plasma processing method, dielectric window for use therein and method for producing the same |
| KR20100060086A (en) * | 2008-11-27 | 2010-06-07 | 세메스 주식회사 | Ceramic dome and plasma processing apparatus with it |
| CN103044063A (en) * | 2006-06-13 | 2013-04-17 | 东京毅力科创株式会社 | Shower plate, method for manufacturing the shower plate, plasma processing apparatus using the shower plate, plasma processing method and electronic device manufacturing method |
| CN112534552A (en) * | 2019-07-18 | 2021-03-19 | 株式会社日立高新技术 | Plasma processing apparatus |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1403627A (en) * | 2001-08-30 | 2003-03-19 | 周星工程股份有限公司 | High-density plasma chemical vapour-phase deposition equipment |
| CN101258786A (en) * | 2005-09-01 | 2008-09-03 | 松下电器产业株式会社 | Plasma processing equipment, plasma processing method, dielectric window for use therein and method for producing the same |
| CN103044063A (en) * | 2006-06-13 | 2013-04-17 | 东京毅力科创株式会社 | Shower plate, method for manufacturing the shower plate, plasma processing apparatus using the shower plate, plasma processing method and electronic device manufacturing method |
| KR20100060086A (en) * | 2008-11-27 | 2010-06-07 | 세메스 주식회사 | Ceramic dome and plasma processing apparatus with it |
| CN112534552A (en) * | 2019-07-18 | 2021-03-19 | 株式会社日立高新技术 | Plasma processing apparatus |
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