CN118130375A - Multispectral comprehensive monitoring device and method for deposition reaction groups - Google Patents
Multispectral comprehensive monitoring device and method for deposition reaction groups Download PDFInfo
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- CN118130375A CN118130375A CN202410220231.7A CN202410220231A CN118130375A CN 118130375 A CN118130375 A CN 118130375A CN 202410220231 A CN202410220231 A CN 202410220231A CN 118130375 A CN118130375 A CN 118130375A
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000008021 deposition Effects 0.000 title claims abstract description 23
- 238000012806 monitoring device Methods 0.000 title claims abstract description 9
- 238000012544 monitoring process Methods 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 50
- 239000000523 sample Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 239000013307 optical fiber Substances 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims abstract description 16
- 238000004458 analytical method Methods 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 45
- 238000001514 detection method Methods 0.000 claims description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000003595 spectral effect Effects 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910003828 SiH3 Inorganic materials 0.000 claims description 3
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001675 atomic spectrum Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 150000003376 silicon Chemical class 0.000 abstract description 3
- 238000003745 diagnosis Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 101000694017 Homo sapiens Sodium channel protein type 5 subunit alpha Proteins 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention belongs to the field of plasma spectrum diagnosis and test, and particularly relates to a multispectral comprehensive monitoring device and method for deposition reaction groups. Assembling and debugging the spectrum monitoring device; starting a mechanical pump, and vacuumizing the PECVD chamber; feeding deposition gas SiH 4/He into the PECVD chamber through the gas circuit, starting a radio frequency power supply, enabling electrons to obtain energy, generating active particles by collision with the deposition gas, and depositing the active particles on the surface of the silicon substrate to finish film plating; closing a radio frequency power supply; after the silicon substrate is subjected to film coating deposition in the PECVD chamber under the action of plasma, transferring the silicon substrate to a component monitoring chamber for film component analysis; bombarding the deposited silicon-based sample by using the hollow cathode to emit electrons, and monitoring a surface luminous area of the silicon-based sample by using an optical fiber probe; and the monitored light entering the spectrometer is split, then imaged by a detector, and the data is read out by an industrial personal computer. The monitoring of amorphous hydrogenated silicon film components in the plasma enhanced chemical vapor deposition process by a spectrum monitoring method is realized.
Description
Technical Field
The invention belongs to the technical field of plasma spectrum diagnosis and test, and particularly relates to a multispectral comprehensive monitoring device and method for deposition reaction groups.
Background
The plasma enhanced chemical vapor deposition process is a key preparation method in the field of semiconductor equipment, and plays a vital role in national economy construction. The amorphous hydrogenated silicon film prepared by the process method is widely used in solar cells, flat panel displays and electrostatic printing photosensitive selenium drums, can realize deposition growth of the film in a low-temperature environment relative to chemical vapor deposition, and can control uniformity and components of the film by regulating plasma parameters.
The composition of the film often determines the use and performance of the device, and industrial monitoring of the film composition is an important indicator of the level of technology. However, conventional monitoring methods, such as X-ray photoelectron spectroscopy (XPS) and Auger Electron Spectroscopy (AES), require transferring the sample to a separate high vacuum chamber, and cannot realize online in-situ monitoring, and are inevitably disturbed by environmental factors during the transfer process.
Disclosure of Invention
The invention provides a spectrum monitoring method for deposited film components in silicon hydride plasma, which is used for monitoring amorphous hydrogenated silicon film components in a plasma enhanced chemical vapor deposition process.
The invention provides a spectrum monitoring device for depositing film components in silicon hydride plasma, which can realize on-line in-situ monitoring.
The invention is realized by the following technical scheme:
A spectroscopic monitoring apparatus for depositing thin film components in a silicon hydride plasma, the spectroscopic monitoring apparatus comprising a PECVD chamber 100, a component detection chamber 200, and a spectrometer system 300;
The PECVD chamber 100 is used for working a plasma deposition target;
The component detection chamber 200 is configured to bombard a silicon substrate with hollow cathode emitted electrons, generate plasma containing film materials, form a film on the surface of the deposited silicon substrate, and perform film component analysis;
the spectrometer system 300 is configured to monitor a light emitting area on a surface of a silicon substrate, monitor that plasma light is emitted into a spectrometer for light splitting, and use a detector for imaging.
Further, the component detecting chamber 200 includes a mechanical pump ii 210, a molecular pump ii 220, a telescopic support rod ii 230, a hollow cathode electron source 240, a support ii 250, and a placement stage ii 260;
One side of the support II 250 is connected with the PECVD chamber 100 through the electromagnetic valve 160, a placement table II 260 is arranged on the inner side of the bottom surface of the top end of the support II 250, the telescopic support rod II 230 penetrates through the support II 250 and the placement table II 260, a silicon substrate is placed on the placement table II 260, a hollow cathode electron source 240 is arranged right above the placement table II 260, a mechanical pump II 210 and a molecular pump II 220 are arranged on the outer side of the bottom surface of the support II 250, and the other side of the support II 250 is inserted into a vacuum optical fiber probe 310 of the spectrometer system 300.
Further, the spectrometer system 300 includes an over-vacuum fiber optic probe 310, a spectrometer, and an image intensifier 320;
The vacuum optical fiber probe 310 and the spectrometer are connected with the image intensifier 320, and the spectrometer and the image intensifier 320 are connected with an industrial personal computer.
Further, the PECVD chamber 100 and the component detection chamber 200 are connected with the overvacuum buckle through the electromagnetic valve 160, the side wall of the component detection chamber 200 is provided with an optical fiber overvacuum feed-through flange through a standard flange interface, and the other end of the optical fiber is connected to the front of the slit of the spectrometer.
Further, the retractable robot 110 is configured to move the sample position and move the silicon substrate from the PECVD chamber 100 to the composition monitoring chamber 200;
the height of the silicon substrate can be adjusted by the telescopic supporting rod I130 and the telescopic supporting rod II 230;
the mechanical pump I120 and the molecular pump I150 are used for maintaining the vacuum state of the PECVD chamber; a mechanical pump II 210 and a molecular pump II 220 for maintaining the vacuum state of the component detecting chamber 200;
the electromagnetic valve 160 is used to control whether the PECVD chamber 100 is in a vacuum state.
A method of spectral monitoring of a deposited film composition in a silicon hydride plasma, the method comprising the steps of:
step1: assembling and debugging the spectrum monitoring device;
Step 2: turning on the mechanical pump 120 to perform vacuum pumping treatment on the PECVD chamber 100;
Step 3: the deposition gas SiH 4/He is supplied into the PECVD chamber 100 through a gas circuit, a radio frequency power supply is started, electrons obtain energy, siH 3、SiH2、SiH、SiH3 + active particles are generated by collision with SiH 4 gas, and the deposition is carried out on the surface of a silicon-based sample wafer; and after coating, the radio frequency power supply is turned off.
Step 4: transferring the silicon substrate after film plating and deposition in the PECVD chamber 100 to a component monitoring chamber 200 through a telescopic mechanical arm 110, bombarding the deposited silicon substrate by adopting hollow cathode emission electrons to generate plasma containing film substances, forming a film on the surface of the deposited silicon substrate, and analyzing the components of the film;
The analysis of the components of the film is specifically that,
The intensity of the Si atomic radiation line is I Si:
ISi=nenSiQSi，
the intensity of the H atomic spectrum line is I H:
IH=nenHQH,
wherein n Si represents a Si atom density, and n H represents an H atom density; q Si and Q H represent the rate coefficient of direct excitation of atoms;
the light intensity ratio is defined and,
R=ISi/IH=nenSiQSi/nenHQH；
Thus, the first and second substrates are bonded together,
nSi/nH=QSiIH/QHISi,
Wherein I H/ISi can be derived from spectral observations and Q Si/QH is derived from a defined intensity formula; the value of n Si/nH, namely x/y, can be obtained, and the content of the film component can be obtained;
Step 5: for the silicon substrate with the film formed on the surface, an optical fiber probe (310) is used for monitoring the light-emitting area of the surface of the silicon substrate, the optical fiber probe 310 transmits the monitored picture to a spectrometer for light splitting, then the detector images, and the industrial personal computer reads out the data.
Further, the step 2 of evacuating the PECVD chamber 100 maintains the pressure in the PECVD chamber 100 at the order of one hundred pa-kpa.
Further, the step 4 is to transfer the silicon substrate to the component monitoring chamber 200 by the telescopic manipulator 110 to perform film component analysis, specifically, to open the electromagnetic valve 160, operate the movable manipulator 110, and transfer the deposited silicon substrate to the component monitoring chamber 200; adjusting the telescopic supporting rod II 230 to enable the deposited silicon sample to be close to the lower end face of the optical fiber probe 310 and start the mechanical pump II 210 and the molecular pump II 220 of the component monitoring chamber 200; to increase the evacuation rate of the component monitoring chamber, the molecular pump I150 of the PECVD chamber 100 is turned on; the vacuum of the component monitoring chamber 200 is maintained at a level of 10 -4 Pa.
Further, the hollow cathode electron source uses inert gas as a working medium, including but not limited to Ar, kr and Xe.
The beneficial effects of the invention are as follows:
the invention has the characteristic of online in-situ monitoring without removing the sample from the deposition chamber.
The invention can improve the accuracy of monitoring and guide the process personnel to optimize the plasma discharge parameters.
The silicon-based sample does not need to be separated from a vacuum environment, so that the interference of environmental factors is avoided; and the content of the element components in the film is obtained by a spectrum monitoring method.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a flow chart of the method of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
A spectroscopic monitoring apparatus for depositing thin film components in a silicon hydride plasma, the spectroscopic monitoring apparatus comprising a PECVD chamber 100, a component detection chamber 200, and a spectrometer system 300;
The PECVD chamber 100 is used for working a plasma deposition target;
The component detection chamber 200 is configured to bombard a silicon substrate with hollow cathode emitted electrons, generate plasma containing film materials, form a film on the surface of the deposited silicon substrate, and perform film component analysis;
the spectrometer system 300 is configured to monitor a light emitting area on a surface of a silicon substrate, monitor that plasma light is emitted into a spectrometer for light splitting, and use a detector for imaging.
Further, the spectrum monitoring apparatus includes a PECVD chamber 100, a component detection chamber 200 and a spectrometer system 300;
The PECVD chamber 100 is used for working a plasma deposition target;
The component detection chamber 200 is used for analyzing the components of the thin film;
The spectrometer system 300 is configured to monitor a light emitting area on a surface of a silicon-based sample, monitor that plasma light is emitted into the spectrometer for light splitting, and use a detector for imaging.
Further, the PECVD chamber 100 comprises a telescopic mechanical arm 110, a mechanical pump I120, a telescopic supporting rod I130, a radio frequency power supply 140, a molecular pump I150, an electromagnetic valve 160, a bracket I170 and a placing table I180;
The telescopic manipulator 110 is inserted to one side of support I170, the bottom surface inboard of support I170 sets up places platform I180, scalable bracing piece I130 runs through and places platform I180 and support I170, place the silicon substrate on the platform I180, place and set up radio frequency power supply 140 directly over the platform I180, the bottom surface outside of support I170 sets up mechanical pump I120 and molecular pump I150, the opposite side of support I170 sets up electromagnetic valve 160, electromagnetic valve 160 is connected with component detection cavity 200.
Further, the component detecting chamber 200 includes a mechanical pump ii 210, a molecular pump ii 220, a telescopic support rod ii 230, a hollow cathode electron source 240, a support ii 250, and a placement stage ii 260;
One side of the support II 250 is connected with the PECVD chamber 100 through the electromagnetic valve 160, a placement table II 260 is arranged on the inner side of the bottom surface of the top end of the support II 250, the telescopic support rod II 230 penetrates through the support II 250 and the placement table II 260, a silicon substrate is placed on the placement table II 260, a hollow cathode electron source 240 is arranged right above the placement table II 260, a mechanical pump II 210 and a molecular pump II 220 are arranged on the outer side of the bottom surface of the support II 250, and the other side of the support II 250 is inserted into a vacuum optical fiber probe 310 of the spectrometer system 300.
Further, the spectrometer system 300 includes an over-vacuum fiber optic probe 310, a spectrometer, and an image intensifier 320;
The vacuum optical fiber probe 310 and the spectrometer are connected with the image intensifier 320, and the spectrometer and the image intensifier 320 are connected with an industrial personal computer.
Further, the PECVD chamber 100 and the component detection chamber 200 are connected with the overvacuum buckle through the electromagnetic valve 160, the side wall of the component detection chamber 200 is provided with an optical fiber overvacuum feed-through flange through a standard flange interface, and the other end of the optical fiber is connected to the front of the slit of the spectrometer.
When the component monitoring chamber works, the electromagnetic valve is opened, the silicon substrate is moved into the component monitoring chamber by the manipulator, and the height of the silicon substrate can be adjusted by the telescopic supporting rod of the component monitoring chamber.
Further, the electromagnetic valve 160 is closed, the mechanical pump II 210 and the molecular pump II 220 of the component monitoring chamber 200 are opened, inert gas is supplied to the hollow cathode electron source, and the hollow cathode electron source bombards the surface of the silicon substrate to generate plasma.
Further, the fiber optic probe 310 monitors the plasma luminescence and receives the light from the ICCD via the spectrometer to generate a spectral image.
Further, the retractable robot 110 is configured to move the sample position and move the silicon substrate from the PECVD chamber 100 to the composition monitoring chamber 200;
The height of the silicon-based sample can be adjusted by the telescopic support rod I130 and the telescopic support rod II 230;
the mechanical pump I120 and the molecular pump I150 are used for maintaining the vacuum state of the PECVD chamber; a mechanical pump II 210 and a molecular pump II 220 for maintaining the vacuum state of the component detecting chamber 200;
the electromagnetic valve 160 is used to control whether the PECVD chamber 100 is in a vacuum state.
A method of spectral monitoring of a deposited film composition in a silicon hydride plasma, the method comprising the steps of:
step1: assembling and debugging the spectrum monitoring device;
Step 2: turning on the mechanical pump 120 to perform vacuum pumping treatment on the PECVD chamber 100;
Step 3: the deposition gas SiH 4/He is supplied into the PECVD chamber 100 through a gas circuit, a radio frequency power supply is started, electrons obtain energy, siH 3、SiH2、SiH、SiH3 + active particles are generated by collision with SiH 4 gas, and the deposition is carried out on the surface of a silicon-based sample wafer; and after coating, the radio frequency power supply is turned off.
Step 4: transferring the silicon substrate after film plating and deposition in the PECVD chamber 100 to a component monitoring chamber 200 through a telescopic mechanical arm 110, bombarding the deposited silicon substrate by adopting hollow cathode emission electrons to generate plasma containing film substances, forming a film on the surface of the deposited silicon substrate, and analyzing the components of the film;
Step 5: for the silicon substrate with the film formed on the surface, an optical fiber probe (310) is used for monitoring the light-emitting area of the surface of the silicon substrate, the optical fiber probe 310 transmits the monitored picture to a spectrometer for light splitting, then the detector images, and the industrial personal computer reads out the data.
Further, the step 2 of evacuating the PECVD chamber 100 maintains the pressure in the PECVD chamber 100 at the order of one hundred pa-kpa.
Further, the step 4 is to transfer the sample to the component monitoring chamber 200 by the telescopic manipulator 110 to perform the analysis of the thin film component, specifically, to open the electromagnetic valve 160, operate the movable manipulator 110, and transfer the deposited silicon-based sample to the component monitoring chamber 200; adjusting the telescopic supporting rod II 230 to enable the deposited silicon sample to be close to the lower end face of the optical fiber probe 310 and start the mechanical pump II 210 and the molecular pump II 220 of the component monitoring chamber 200; to increase the evacuation rate of the component monitoring chamber, the molecular pump I150 of the PECVD chamber 100 is turned on; the vacuum of the component monitoring chamber 200 is maintained at a level of 10 -4 Pa.
Further, the hollow cathode electron source uses inert gas as a working medium, including but not limited to Ar, kr and Xe.
A specific application of the method for analyzing the composition of a thin film in connection with figure 2 in the embodiment of the present invention is,
The PECVD deposition gas is SiH 4/He, and the film component is Si xHy. The intensity of Si atomic radiation line (288 nm) monitored by the experiment is recorded as follows: i Si the intensity of the H atomic line (656 nm) monitored by the experiment is: i H.
Further, I Si=nenSiQSi,IH=nenHQH, wherein n Si represents a Si atomic density, and n H represents an H atomic density. Q Si and Q H represent the rate coefficient of direct excitation of atoms, which is a function of electron temperature, available from a database. Generally, the temperature of the hollow cathode plume is 1-4eV, and the specific values of Q Si and Q H can be obtained by taking the temperature of the hollow cathode plume to be 3eV in the embodiment;
Further, a light intensity ratio r=i Si/IH=nenSiQSi/nenHQH is defined. Thus, n Si/nH=QSiIH/QHISi, where the value of Q Si/QH is obtained given the electron temperature. Whereas I H/ISi is obtained by spectroscopic observation. n Si/nH is the value of x/y, the content of the film component can be obtained.
According to the analysis method provided by the embodiment of the invention, through the spectrum monitoring method and the spectrum monitoring method for the deposited film components in the silicon hydride plasma, the silicon-based sample does not need to be separated from a vacuum environment, and the interference of environmental factors is avoided. And the content of the element components in the film is obtained by a spectrum monitoring method.
Claims (10)
1. A spectroscopic monitoring apparatus for depositing a thin film composition in a silicon hydride plasma, the spectroscopic monitoring apparatus comprising a PECVD chamber (100), a composition detection chamber (200) and a spectrometer system (300);
The PECVD chamber (100) is used for working a plasma deposition target;
the component detection chamber (200) is used for bombarding the silicon substrate by adopting hollow cathode emission electrons, generating plasma containing film substances to form a film on the surface of the deposited silicon substrate, and analyzing the film components;
the spectrometer system (300) is used for monitoring the surface light-emitting area of the silicon sample, monitoring the plasma light emission, entering the spectrometer for light splitting, and imaging by using a detector.
2. The spectroscopic monitoring apparatus as set forth in claim 1, wherein the composition detection chamber (200) comprises a mechanical pump ii (210), a molecular pump ii (220), a telescopic support rod ii (230), a hollow cathode electron source (240) and a support ii (250) and a placement stage ii (260);
One side of support II (250) is connected with PECVD cavity (100) through electromagnetic valve (160), the bottom surface inboard on the top of support II (250) sets up places platform II (260), scalable bracing piece II (230) run through support II (250) and place platform II (260), place on platform II (260) place silicon substrate sample wafer, place and set up hollow cathode electron source (240) directly over platform II (260), the bottom surface outside of support II (250) sets up mechanical pump II (210) and molecular pump II (220), the vacuum fiber probe (310) of spectrum appearance system (300) are inserted to the opposite side of support II (250).
3. A spectroscopic monitoring apparatus as recited in claim 1, wherein said spectrometer system (300) comprises an over-vacuum fiber optic probe (310), a spectrometer and an image intensifier (320);
the vacuum optical fiber probe (310) and the spectrometer are connected with the image intensifier (320), and the spectrometer and the image intensifier (320) are connected with the industrial personal computer.
4. The device for monitoring the spectrum of the deposited film components in the silicon hydride plasma according to claim 2, wherein the PECVD chamber (100) and the component detection chamber (200) are connected with an excessive vacuum buckle through an electromagnetic valve (160), the side wall of the component detection chamber (200) is provided with an optical fiber excessive vacuum feed-through flange through a standard flange interface for connecting an optical fiber, and the other end of the optical fiber is connected to the front of a slit of a spectrometer.
5. The spectroscopic monitoring apparatus as recited in claim 1, wherein the PECVD chamber (100) comprises a telescoping robot (110), a mechanical pump i (120), a molecular pump i (150), and a solenoid valve (160);
The telescopic manipulator (110) is used for moving a sample position and moving a silicon sample wafer from the PECVD chamber (100) to the component monitoring chamber (200);
The height of the silicon-based sample wafer can be adjusted by the telescopic supporting rod I (130) and the telescopic supporting rod II (230);
the mechanical pump I (120) and the molecular pump I (150) are used for maintaining the vacuum state of the PECVD chamber; a mechanical pump II (210) and a molecular pump II (220) for maintaining a vacuum state of the component detection chamber (200);
the electromagnetic valve (160) is used for controlling whether the PECVD chamber (100) is in a vacuum state or not.
6. A method for spectral monitoring of a deposited film composition in a silicon hydride plasma, the method comprising the steps of:
step 1: assembling and commissioning a spectrum monitoring device according to any one of claims 1-5;
Step 2: starting a mechanical pump (120) to vacuumize the PECVD chamber (100);
Step 3: the deposition gas SiH 4/He is supplied into the PECVD chamber (100) through a gas circuit, a radio frequency power supply is started, electrons obtain energy, siH 3、SiH2、SiH、SiH3 + active particles are generated by collision with SiH 4 gas, and the deposition is carried out on the surface of a silicon-based sample wafer to finish film plating; and after coating, the radio frequency power supply is turned off.
Step 4: transferring the silicon substrate after film plating and deposition in the PECVD chamber (100) to a component monitoring chamber (200) through a telescopic mechanical arm (110), bombarding the deposited silicon substrate by adopting hollow cathode emission electrons to generate plasma containing film substances, forming a film on the surface of the deposited silicon substrate, and analyzing the components of the film;
Step 5: monitoring a light emitting area of a surface of a silicon-based sample wafer on which a thin film has been formed by using a fiber probe (310); the optical fiber probe (310) transmits the monitored picture to the spectrometer for light splitting, then the picture is imaged by the detector, and the data is read out by the industrial personal computer.
7. The method of claim 6, wherein the step 2 of evacuating the PECVD chamber (100) maintains the pressure within the PECVD chamber (100) at a level of one hundred-kpa.
8. The method of claim 6, wherein the step 4 is performed by transferring the deposited thin film component in the silicon hydride plasma to the component monitoring chamber (200) by the telescopic robot (110), and in particular, opening the electromagnetic valve (160), operating the movable robot (110), and transferring the deposited silicon wafer to the component monitoring chamber (200); adjusting the telescopic supporting rod II (230) to enable the deposited silicon sample to be close to the lower end face of the optical fiber probe (310) to start the mechanical pump II (210) and the molecular pump II (220) of the component monitoring chamber (200); starting a molecular pump I (150) of the PECVD chamber (100) to increase the vacuumizing speed of the component monitoring chamber; the vacuum of the component monitoring chamber (200) is maintained at a level of 10 -4 Pa.
9. The method of claim 6, wherein the analysis of the thin film component in step 4 is specifically,
The intensity of the Si atomic radiation line is I Si:
ISi=nenSiQSi，
the intensity of the H atomic spectrum line is I H:
IH=nenHQH,
wherein n Si represents a Si atom density, and n H represents an H atom density; q Si and Q H represent the rate coefficient of direct excitation of atoms;
the light intensity ratio is defined and,
R=ISi/IH=nenSiQSi/nenHQH；
Thus, the first and second substrates are bonded together,
nSi/nH=QSiIH/QHISi,
Wherein I H/ISi can be derived from spectral observations and Q Si/QH is derived from a defined intensity formula; the value of n Si/nH, i.e., x/y, can be obtained, and the content of the thin film component can be obtained.
10. The method of spectral monitoring of deposited film composition in a hydrocarbon plasma of claim 6, wherein the hollow cathode electron source uses inert gases as working fluids, including but not limited to Ar, kr and Xe.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410220231.7A CN118130375A (en) | 2024-02-28 | 2024-02-28 | Multispectral comprehensive monitoring device and method for deposition reaction groups |
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| CN202410220231.7A CN118130375A (en) | 2024-02-28 | 2024-02-28 | Multispectral comprehensive monitoring device and method for deposition reaction groups |
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