CN118099226A - Schottky barrier diode with mixed anode structure and preparation method and application thereof - Google Patents
Schottky barrier diode with mixed anode structure and preparation method and application thereof Download PDFInfo
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- CN118099226A CN118099226A CN202410206322.5A CN202410206322A CN118099226A CN 118099226 A CN118099226 A CN 118099226A CN 202410206322 A CN202410206322 A CN 202410206322A CN 118099226 A CN118099226 A CN 118099226A
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- 230000004888 barrier function Effects 0.000 title claims abstract description 94
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000006911 nucleation Effects 0.000 claims abstract description 12
- 238000010899 nucleation Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000009776 industrial production Methods 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 46
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a Schottky barrier diode with a hybrid anode structure, and a preparation method and application thereof. The Schottky barrier diode with the mixed anode structure comprises a substrate, an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a passivation layer, a first cathode metal electrode, an anode metal electrode, a GaN cap layer, an anode field plate and a plurality of second cathode metal electrodes, wherein the substrate, the AlN nucleation layer, the GaN buffer layer, the GaN channel layer, the AlGaN barrier layer and the passivation layer are sequentially stacked, and the second cathode metal electrodes are arranged in the anode metal electrode at intervals. The Schottky barrier diode with the mixed anode structure has the advantages of low starting voltage, small leakage current and high reliability, and is suitable for large-scale industrial production and application.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a Schottky barrier diode with a hybrid anode structure, and a preparation method and application thereof.
Background
Schottky Barrier Diodes (SBDs), also known as hot carrier diodes, are an indispensable device in most power electronics, and are required to have a low turn-on voltage, a specific on-resistance, a low reverse leakage current, and a high breakdown voltage to reduce power loss during use. Gallium nitride (GaN) has larger forbidden band width and higher electron mobility, and the performance of the AlGaN/GaN Schottky barrier diode taking sapphire or silicon carbide (SiC) as a substrate is superior to that of Schottky barrier diodes of other material systems, so that the AlGaN/GaN Schottky barrier diode has wider application prospect. The Si/GaN-based Schottky barrier diode has better performance and lower cost, has good commercial application potential and is concerned by people. However, the existing Si/GaN schottky barrier diode generally has the problems of higher turn-on voltage and larger leakage current, so that the existing Si/GaN schottky barrier diode has the risk of easy failure in many application scenes, and the existing Si/GaN schottky barrier diode still has difficulty in completely meeting the practical application requirements.
Therefore, it is very important to develop a schottky barrier diode with low turn-on voltage, small leakage current and high reliability.
Disclosure of Invention
The invention aims to provide a Schottky barrier diode with a mixed anode structure, and a preparation method and application thereof.
The technical scheme adopted by the invention is as follows:
The Schottky barrier diode with the mixed anode structure comprises a substrate, an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a passivation layer, a first cathode metal electrode, an anode metal electrode, a GaN cap layer, an anode field plate and a second cathode metal electrode which are sequentially stacked; the first cathode metal electrode is arranged on the surface of the AlGaN barrier layer, which is far away from the GaN channel layer, and is in contact with the passivation layer; the anode metal electrode is arranged on the surface of the GaN channel layer, which is far away from the GaN buffer layer, and is contacted with the AlGaN barrier layer, the GaN cap layer and the anode field plate; the GaN cap layer is arranged on the surface of the AlGaN barrier layer, which is far away from the GaN channel layer, and is in contact with the passivation layer; the anode field plate is arranged on the surface of the GaN cap layer, which is far away from the AlGaN barrier layer; the second cathode metal electrodes are arranged in a plurality in a spacing mode inside the anode metal electrodes and are in contact with the GaN channel layer.
Preferably, the substrate is one of a Si substrate, a GaAs substrate, and a sapphire substrate.
Preferably, the AlN nucleation layer has a thickness of 0.5nm to 1.5nm.
Preferably, the thickness of the GaN buffer layer is 200 nm-400 nm.
Preferably, the thickness of the GaN channel layer is 100nm to 300nm.
Preferably, the thickness of the AlGaN barrier layer is 10nm to 30nm.
Preferably, the thickness of the passivation layer is 40nm to 80nm.
Preferably, the composition of the passivation layer includes Si 3N4.
Preferably, the width of the first cathode metal electrode is 3 μm to 7 μm.
Preferably, the composition of the first cathode metal electrode includes Ti, al, ni, and Au.
Preferably, the width of the anode metal electrode is 7 μm to 11 μm.
Preferably, the composition of the anode metal electrode includes Ni and Au.
Preferably, the distance between the first cathode metal electrode and the anode metal electrode (the distance between the left side edge of the first cathode metal electrode and the right side edge of the anode metal electrode, i.e., the minimum distance between the two) is 15 μm to 25 μm.
Preferably, the thickness of the GaN cap layer is 10 nm-30 nm.
Preferably, the thickness of the anode field plate is 30 nm-50 nm.
Preferably, the anode field plate comprises Ni and Au as constituent components.
Preferably, the second cathode metal electrode has a width of 3 μm to 7 μm and a length of 15 μm to 25 μm.
Preferably, the composition of the second cathode metal electrode includes Ti, al, ni, and Au.
The preparation method of the Schottky barrier diode with the mixed anode structure comprises the following steps:
1) Sequentially depositing an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on a substrate;
2) Photoetching and CF 4 etching source etching are carried out on the surface of the GaN cap layer, and part of AlGaN barrier layer is exposed;
3) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form a first cathode metal electrode preparation area and a second cathode metal electrode preparation area, photoresist stripping and annealing are carried out after electrode metal is evaporated, and a first cathode metal electrode and a second cathode metal electrode are formed;
4) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form an anode metal electrode preparation area, and photoresist stripping is carried out after electrode metal is evaporated to form an anode metal electrode;
5) Evaporating electrode metal on the surface of the GaN cap layer to form an anode field plate;
6) And photoetching the surface of the AlGaN barrier layer to form a passivation layer preparation area, and depositing a passivation layer material to form a passivation layer to obtain the Schottky barrier diode with the mixed anode structure.
An electronic product comprises the Schottky barrier diode with the mixed anode structure.
The beneficial effects of the invention are as follows: the Schottky barrier diode with the mixed anode structure has the advantages of low starting voltage, small leakage current and high reliability, and is suitable for large-scale industrial production and application.
Specifically:
The Schottky barrier diode provided by the invention has the advantages that the mixed anode structure is formed by arranging a plurality of cathode metal electrodes in the anode metal electrode at intervals, when the device is connected with forward voltage, the device can be connected when the voltage is lower than the starting voltage of Schottky contact but higher than the starting voltage of the cathode metal electrode in the mixed anode structure, and the groove structure in the anode metal electrode can reduce the anode barrier height; the cathode metal electrodes in the mixed anode structure in the Schottky barrier diode are arranged at intervals, so that the ohmic contact area in the mixed anode structure can be effectively reduced (the mixed anode structure can reduce the starting voltage but can increase the reverse leakage current at the same time); finally, under the combined action of the two structures, the Schottky barrier diode has the advantages of low starting voltage, low leakage current, high reliability and the like.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a schottky barrier diode with a hybrid anode structure of embodiment 1.
Fig. 2 is a top view of a schottky barrier diode with a hybrid anode structure of example 1.
Fig. 3 is a top view of the schottky barrier diode of the comparative example.
The attached drawings are used for identifying and describing: 10. a Si substrate; 20. an AlN nucleation layer; 30. a GaN buffer layer; 40. a GaN channel layer; 50. an AlGaN barrier layer; 60. a passivation layer; 70. a first cathode metal electrode; 80. an anode metal electrode; 90. a GaN cap layer; 100. an anode field plate; 110. a second cathode metal electrode.
Fig. 4 is a graph showing the turn-on voltage test results of the schottky barrier diode having the hybrid anode structure of examples 1 to 3 and the schottky barrier diode of the comparative example.
Fig. 5 is a graph showing the leakage current test results of the schottky barrier diode having the hybrid anode structure of examples 1 to 3 and the schottky barrier diode of the comparative example.
Detailed Description
The invention is further illustrated and described below in connection with specific examples.
Example 1:
A schottky barrier diode (the overall structure schematic diagram is shown in fig. 1, the top view is shown in fig. 2) with a hybrid anode structure, which is composed of a Si substrate 10, an AlN nucleation layer 20, a GaN buffer layer 30, a GaN channel layer 40, an AlGaN barrier layer 50, a passivation layer 60, a first cathode metal electrode 70, an anode metal electrode 80, a GaN cap layer 90, an anode field plate 100, and a second cathode metal electrode 110; the Si substrate 10, the AlN nucleation layer 20, the GaN buffer layer 30, the GaN channel layer 40, the AlGaN barrier layer 50 and the passivation layer 60 are laminated in this order; the first cathode metal electrode 70 is disposed on the side of the AlGaN barrier layer 50 remote from the GaN channel layer 40 and in contact with the passivation layer 60; the anode metal electrode 80 is disposed on the side of the GaN channel layer 40 away from the GaN buffer layer 30 and is in contact with the AlGaN barrier layer 50, the GaN cap layer 90, and the anode field plate 100; the GaN cap layer 90 is disposed on the side of the AlGaN barrier layer 50 remote from the GaN channel layer 40 and in contact with the passivation layer 60; the anode field plate 100 is disposed on the side of the GaN cap layer 90 remote from the AlGaN barrier layer 50; the number of second cathode metal electrodes 110 is 4, and are arranged at intervals inside the anode metal electrode 80 and in contact with the GaN channel layer 40.
The preparation method of the Schottky barrier diode with the mixed anode structure comprises the following steps:
1) Epitaxially growing an AlN nucleation layer with the thickness of 1nm, a GaN buffer layer with the thickness of 300nm, a GaN channel layer with the thickness of 200nm, an AlGaN barrier layer with the thickness of 20nm and a GaN cap layer with the thickness of 20nm on a Si substrate sequentially by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method;
2) Photoetching and CF 4 etching source etching are carried out on the surface of the GaN cap layer, and part of AlGaN barrier layer is exposed;
3) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form a first cathode metal electrode preparation area and a second cathode metal electrode preparation area, then Ti-Al-Ni-Au alloy evaporation is carried out by adopting an electron beam evaporation method, the electron beam energy is 3kV, the vacuum degree P is less than or equal to 10 -3 Pa, then acetone is adopted to carry out photoresist stripping and annealing is carried out in nitrogen atmosphere, and a first cathode metal electrode with the width of 5 mu m and 4 second cathode metal electrodes with the width of 3 mu m, the length of 15 mu m and the interval of 10 mu m are formed;
4) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form an anode metal electrode preparation area, then Ni-Au alloy evaporation is carried out by adopting an electron beam evaporation method, the energy of an electron beam is 3kV, the vacuum degree P is less than or equal to 10 -3 Pa, and then photoresist stripping is carried out by adopting acetone to form an anode metal electrode with the width of 7 mu m and the distance between the anode metal electrode and the first cathode metal electrode of 20 mu m;
5) Carrying out Ni-Au alloy evaporation on the surface of the GaN cap layer by adopting an electron beam evaporation method, wherein the energy of the electron beam is 3kV, the vacuum degree P is less than or equal to 10 -3 Pa, and an anode field plate with the thickness of 40nm is formed;
6) And photoetching the surface of the AlGaN barrier layer to form a passivation layer preparation area, and depositing a Si 3N4 layer with the thickness of 60nm by adopting a low-pressure chemical vapor deposition method to form a passivation layer to obtain the Schottky barrier diode with the mixed anode structure.
Example 2:
The schottky barrier diode having the hybrid anode structure was identical to that of example 1 except that the "second cathode metal electrode having a width of 3 μm and a length of 15 μm and a spacing of 10 μm was replaced with the" second cathode metal electrode having a width of 4 μm and a length of 20 μm and a spacing of 10 μm ".
Example 3:
The schottky barrier diode having the hybrid anode structure was identical to that of example 1 except that the "second cathode metal electrode having a width of 3 μm and a length of 15 μm and a spacing of 10 μm was replaced with the" second cathode metal electrode having a width of 5 μm and a length of 25 μm and a spacing of 10 μm ".
Comparative example:
A schottky barrier diode (plan view is shown in fig. 3) was identical to the schottky barrier diode of example 1, except that "4 second cathode metal electrodes having a width of 3 μm and a length of 15 μm and a spacing of 10 μm" were replaced with "1 second cathode metal electrode having a width of 3 μm and a length of 90 μm".
Performance test:
The turn-on voltage test results of the schottky barrier diodes with the mixed anode structure of examples 1 to 3 and the schottky barrier diode of the comparative example are shown in fig. 4, and the leakage current test results are shown in fig. 5.
As can be seen from fig. 4: the schottky barrier diodes of examples 1 to 3 having the mixed anode structure (the anode metal electrode was internally provided with the spaced cathode metal electrode) had the turn-on voltages of 0.47V, 0.45V and 0.44V at the current of 1.0mA/mm, respectively, while the schottky barrier diodes of the comparative example (the anode metal electrode was internally provided with the integrated cathode metal electrode) had the turn-on voltage of 0.48V at the current of 1.0mA/mm, which revealed that the provision of the mixed anode structure formed by the spaced arrangement of the plurality of cathode metal electrodes inside the anode metal electrode did not affect the optimization of the turn-on voltage of the schottky barrier diode by the cathode metal in the mixed anode.
As can be seen from fig. 5: the schottky barrier diodes of examples 1 to 3 having the mixed anode structure (the anode metal electrode was internally provided with the spaced cathode metal electrode) had leakage currents of 1.5×10 -7mA/mm、3.4×10-7 mA/mm and 4.9×10 -7 mA/mm at a voltage of-100V, respectively, whereas the schottky barrier diodes of the comparative examples (the anode metal electrode was internally provided with the integrated cathode metal electrode) had leakage currents of 4.4×10 -6 mA/mm at a voltage of-100V, indicating that the mixed anode structure in which a plurality of cathode metal electrodes were arranged at intervals inside the anode metal electrode did greatly reduce the leakage currents of the schottky barrier diodes.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (10)
1. The Schottky barrier diode with the mixed anode structure is characterized by comprising a substrate, an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer, a passivation layer, a first cathode metal electrode, an anode metal electrode, a GaN cap layer, an anode field plate and a second cathode metal electrode which are sequentially stacked; the first cathode metal electrode is arranged on the surface of the AlGaN barrier layer, which is far away from the GaN channel layer, and is in contact with the passivation layer; the anode metal electrode is arranged on the surface of the GaN channel layer, which is far away from the GaN buffer layer, and is contacted with the AlGaN barrier layer, the GaN cap layer and the anode field plate; the GaN cap layer is arranged on the surface of the AlGaN barrier layer, which is far away from the GaN channel layer, and is in contact with the passivation layer; the anode field plate is arranged on the surface of the GaN cap layer, which is far away from the AlGaN barrier layer; the second cathode metal electrodes are arranged in a plurality in a spacing mode inside the anode metal electrodes and are in contact with the GaN channel layer.
2. The schottky barrier diode with hybrid anode structure of claim 1, wherein: the thickness of the AlN nucleation layer is 0.5 nm-1.5 nm; the thickness of the GaN buffer layer is 200 nm-400 nm; the thickness of the GaN channel layer is 100 nm-300 nm; the thickness of the AlGaN barrier layer is 10 nm-30 nm.
3. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the thickness of the passivation layer is 40 nm-80 nm.
4. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the composition of the passivation layer comprises Si 3N4.
5. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the thickness of the GaN cap layer is 10 nm-30 nm.
6. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the width of the first cathode metal electrode is 3-7 mu m; the width of the anode metal electrode is 7-11 mu m; the thickness of the anode field plate is 30 nm-50 nm; the width of the second cathode metal electrode is 3-7 mu m, and the length is 15-25 mu m; the distance between the first cathode metal electrode and the anode metal electrode is 15-25 μm.
7. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the first cathode metal electrode comprises Ti, al, ni and Au; the anode metal electrode comprises Ni and Au; the anode field plate comprises Ni and Au; the composition of the second cathode metal electrode comprises Ti, al, ni and Au.
8. The schottky barrier diode with hybrid anode structure of claim 1 or 2, characterized in that: the substrate is one of a Si substrate, a GaAs substrate and a sapphire substrate.
9. A method of manufacturing a schottky barrier diode having a hybrid anode structure as described in any one of claims 1 to 8, comprising the steps of:
1) Sequentially depositing an AlN nucleation layer, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on a substrate;
2) Photoetching and CF 4 etching source etching are carried out on the surface of the GaN cap layer, and part of AlGaN barrier layer is exposed;
3) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form a first cathode metal electrode preparation area and a second cathode metal electrode preparation area, photoresist stripping and annealing are carried out after electrode metal is evaporated, and a first cathode metal electrode and a second cathode metal electrode are formed;
4) Photoetching and CF 4 etching source etching are carried out on the surface of the AlGaN barrier layer to form an anode metal electrode preparation area, and photoresist stripping is carried out after electrode metal is evaporated to form an anode metal electrode;
5) Evaporating electrode metal on the surface of the GaN cap layer to form an anode field plate;
6) And photoetching the surface of the AlGaN barrier layer to form a passivation layer preparation area, and depositing a passivation layer material to form a passivation layer to obtain the Schottky barrier diode with the mixed anode structure.
10. An electronic product comprising the schottky barrier diode having the hybrid anode structure according to any one of claims 1 to 8.
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| CN202410206322.5A CN118099226A (en) | 2024-02-26 | 2024-02-26 | Schottky barrier diode with mixed anode structure and preparation method and application thereof |
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| CN202410206322.5A CN118099226A (en) | 2024-02-26 | 2024-02-26 | Schottky barrier diode with mixed anode structure and preparation method and application thereof |
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