CN118092028A - Beam scanning device and electronic equipment - Google Patents

Abstract

The present application relates to a beam scanning apparatus and an electronic device. Wherein, beam scanning device includes: the liquid crystal display comprises a first substrate, a reflecting layer, a liquid crystal layer and an electrode; the reflective layer is positioned between the first substrate and the liquid crystal layer; the liquid crystal layer and the electrode are positioned on one side of the reflecting layer away from the first substrate; the liquid crystal layer and the electrode are positioned on the same layer; and the electrode is adjacent to the liquid crystal layer on a plane parallel to the reflective layer; the reflection layer is configured to reflect a beam incident to the reflection layer from a side of the reflection layer toward the liquid crystal layer. According to the embodiment, the beam pointing can be regulated and controlled under the condition that a mechanical structure is avoided.

Description

Beam scanning device and electronic equipment

Technical Field

The present application relates to the field of beam scanning apparatuses, and in particular, to a beam scanning apparatus and an electronic device.

Background

In the related art, beam shaping has an important role in various optical band fields, especially in the radar field. Radar is widely used in the fields of military, communication, imaging, civil autopilot and the like. The traditional radar calculates the time from the time when a signal is sent out to the time when the signal is returned to the time when the signal touches a target object by using a flight time method so as to calculate the distance between the signal and the target object and detect the target object in multiple directions.

Therefore, most of the existing mature radars are mechanical radars, and the control of the beam direction is realized through mechanical components in the radars, so that the radars have the defects of large volume, large weight, difficult integration and the like.

Disclosure of Invention

The application provides a beam scanning device and electronic equipment, which are used for solving all or part of the defects in the related technology.

According to a first aspect of an embodiment of the present application, there is provided a beam scanning apparatus including: the liquid crystal display comprises a first substrate, a reflecting layer, a liquid crystal layer and an electrode;

The reflective layer is positioned between the first substrate and the liquid crystal layer; the liquid crystal layer and the electrode are positioned on one side of the reflecting layer away from the first substrate;

The liquid crystal layer and the electrode are positioned on the same layer; and the electrode is adjacent to the liquid crystal layer on a plane parallel to the reflective layer; the reflection layer is configured to reflect a beam incident to the reflection layer from a side of the reflection layer toward the liquid crystal layer.

In some embodiments, the beam scanning apparatus includes at least two beam scanning apparatus units arranged in an array; each beam scanning device unit comprises the liquid crystal layer and the electrode.

In some embodiments, the beam scanning apparatus includes at least two of the beam scanning apparatus units arranged in a single column array; the beam scanning device units are sequentially arranged along the same direction.

In some embodiments, the electrodes within each of the beam scanning apparatus units are located on opposite sides of the liquid crystal layer in a plane parallel to the reflective layer; the arrangement mode of the electrodes in each beam scanning device unit and the liquid crystal layer is the same;

adjacent ones of the beam scanning apparatus units share the electrode.

In some embodiments, the beam scanning apparatus includes at least four of the beam scanning apparatus units arranged in an array; the beam scanning device units are sequentially arranged along at least two directions.

In some embodiments, the beam scanning apparatus is configured to modulate a beam incident on the beam scanning apparatus, the modulated beam satisfying the following equation:

where λ is the wavelength of the incident beam, d is the thickness of the liquid crystal layer, and n (z) is the refractive index of each beam scanning apparatus unit.

In some embodiments, the reflective layer has a thickness of 2 microns to 10 microns.

In some embodiments, the material of the reflective layer comprises copper, aluminum, molybdenum, manganese, or silver.

In some embodiments, the length of the liquid crystal layer extending in a direction away from the first substrate is its thickness, and the length of the electrode extending in a direction away from the first substrate is its height; the thickness of the liquid crystal layer is equal to the height of the electrode, and the thickness of the liquid crystal layer and the height of the electrode are 5 micrometers to 20 micrometers.

In some embodiments, the reflective layer is parabolic in shape, the paraboloid including a concave surface; the concave surface faces to one side provided with the liquid crystal layer and the electrode, and the concave surface faces away from one side provided with the first substrate.

In some embodiments, the liquid crystal layer and the electrode have a contour corresponding to the concave surface on a side facing the first substrate.

In some embodiments, the beam scanning apparatus further comprises: the first insulating layer, the second insulating layer and the second substrate;

the first insulating layer is positioned between the liquid crystal layer and the reflecting layer, the second insulating layer is positioned on one side of the liquid crystal layer far away from the first insulating layer, and the second substrate is positioned on one side of the second insulating layer far away from the liquid crystal layer.

In some embodiments, the material of the first insulating layer and the second insulating layer comprises silicon nitride.

According to a second aspect of an embodiment of the present application, there is provided an electronic device including any one of the beam scanning apparatuses described above.

In some embodiments, the electronic device comprises at least two of the beam scanning apparatuses; at least two of the beam scanning apparatuses are connected to each other and face at least two different directions.

According to the embodiment of the application, the modulation of the beam phase can be realized through the synergistic effect of the reflecting layer, the electrode and the liquid crystal layer. The effect similar to the grating structure is formed by the electrodes, and meanwhile, the refractive index of the liquid crystal layer is changed by the electric field formed by the electrodes, so that the effect similar to the grating structure formed by the electrodes is dynamically adjusted, the modulation of the beam incident to the beam scanning device is realized, and then the modulated beam is reflected off the beam scanning device through the reflecting layer. Under the condition of avoiding the adoption of huge and complex mechanical components, the beam scanning device can realize the regulation and control of the beam pointing, so that the structure of the beam scanning device is simplified while the regulation and control of the beam pointing are realized, the preparation cost, the weight and the size of the beam scanning device can be reduced, and the light weight and the small volume of the beam scanning device enable the beam scanning device to be easily integrated in more electronic equipment.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

Fig. 1 is a schematic structural view of a beam scanning apparatus according to an embodiment of the present application;

fig. 2 is a top view of a beam scanning apparatus according to an embodiment of the present application;

Fig. 3 is a schematic structural view of a beam scanning apparatus unit according to an embodiment of the present application;

FIG. 4 is a schematic diagram illustrating a beam scanning apparatus for phase modulating an incident beam in accordance with an embodiment of the present application;

FIG. 5 is a top view of another beam scanning apparatus according to an embodiment of the present application;

FIG. 6 is a graph showing the relationship between the exit angle of an infrared beam after modulation from a beam scanning device and the refractive index of the beam scanning device unit, according to an embodiment of the present application;

Fig. 7 is a schematic structural view of another beam scanning apparatus according to an embodiment of the present application;

fig. 8 is a partial structure of an electronic device according to an embodiment of the present application.

Detailed Description

Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.

An embodiment of the present application provides a beam scanning apparatus 10, fig. 1 shows a schematic structural diagram of the beam scanning apparatus 10, and fig. 2 shows a top view of the beam scanning apparatus 10. As shown in fig. 1 and 2, the beam scanning apparatus 10 includes: a first substrate 11, a reflective layer 12, a liquid crystal layer 13, and an electrode 14.

The reflective layer 12 is located between the first substrate 11 and the liquid crystal layer 13. The liquid crystal layer 13 and the electrode 14 are located on the side of the reflective layer 12 remote from the first substrate 11.

The liquid crystal layer 13 is located on the same layer as the electrode 14. And the electrode 14 is adjacent to the liquid crystal layer 13 in a plane parallel to the reflective layer 12. The reflective layer 12 is configured to reflect a beam incident on the reflective layer 12 from a side of the reflective layer 12 toward the liquid crystal layer 13.

Specifically, as shown in fig. 1, a direction away from the first substrate 11 is a first direction Z. Also shown in fig. 1 is a second direction X that is perpendicular to the first direction Z and parallel to the film layers of the beam scanning apparatus 10. The plane parallel to the reflective layer 12 is a plane perpendicular to the first direction Z and parallel to the second direction X. The plane referred to in other parts of the present application is the same as that described herein with respect to the plane.

The electrode 14 is located on a side of the reflective layer 12 away from the first substrate 11, and the liquid crystal layer 13 is also located on a side of the reflective layer 12 away from the first substrate 11. On the plane parallel to the reflective layer 12, the electrode 14 is adjacent to the liquid crystal layer 13, which does not mean that the two ends of the electrode 14 and the liquid crystal layer 13 are respectively located on the same plane, but means that the electrode 14 and the liquid crystal layer 13 are located in the same layer structure of the beam scanning device 10, and the electrode 14 is adjacent to the liquid crystal layer 13. Meanwhile, it can also be considered that the electrode 14 is located at a side of the reflective layer 12 away from the first substrate 11, and the liquid crystal layer 13 is located between the electrodes 14, i.e., the liquid crystal layer 13 is adjacent to the electrodes 14.

After the electrodes 14 are energized, an electric field may be formed between adjacent energized electrodes 14. And liquid crystal molecules 131 are provided in the liquid crystal layer 13. The liquid crystal molecules 131 in the liquid crystal layer 13 can be deflected by an electric field formed between the adjacent energized electrodes 14, and the refractive index of the entire liquid crystal layer 13 can be changed.

When a beam is incident on the reflective layer 12 from the side of the reflective layer 12 facing the liquid crystal layer 13, a voltage is applied to the electrodes 14 to generate an electric field between the adjacent energized electrodes 14. The liquid crystal molecules 131 in the liquid crystal layer 13 deflect under the action of the electric field, so that the refractive index of the whole liquid crystal layer 13 is changed. Meanwhile, the electrode 14 can form a grating-like effect, and the dynamic adjustment of the grating effect formed by the electrode 14 is combined with the change of the refractive index of the whole liquid crystal layer 13. Modulation of the phase of the incident beam passing through the liquid crystal layer 13 and the electrode 14 can be achieved. And the reflective layer 12 is configured to reflect a beam incident on the reflective layer 12 from a side of the reflective layer 12 toward the liquid crystal layer 13. When the beam passes through the reflective layer 12 from the side of the reflective layer 12 toward the liquid crystal layer 13, the beam is reflected at the reflective layer 12, and at the same time, the electrode 14 is not applied with a voltage, so that the liquid crystal layer 13 is not deflected due to the liquid crystal molecules 131 inside thereof, and the refractive index thereof is not changed. That is, the refractive index of the liquid crystal layer 13 is not changed when the reflected beam passes through the liquid crystal layer 13, and thus the phase of the incident beam is not changed. The beam reflected by the reflecting layer 12 is the desired beam modulated by the beam scanning device 10.

As can be seen from the above embodiments, modulation of the beam phase can be achieved by the synergistic effect of the reflective layer 12, the electrode 14 and the liquid crystal layer 13. I.e. the effect of the grating-like structure is formed by the electrodes 14, and at the same time, the electric field formed by the electrodes 14 changes the refractive index of the liquid crystal layer 13, so as to dynamically adjust the effect of the grating-like structure formed by the electrodes 14, so as to realize the modulation of the beam incident on the beam scanning device 10, and then the modulated beam is reflected off the beam scanning device 10 via the reflecting layer 12. Under the condition of avoiding the adoption of huge and complex mechanical components, the beam scanning device 10 can realize the regulation and control of the beam pointing, so that the beam scanning device 10 can realize the regulation and control of the beam pointing, meanwhile, the structure of the beam scanning device 10 is simplified, the preparation cost, the weight and the size of the beam scanning device 10 can be reduced, and the beam scanning device 10 is easy to integrate in more electronic equipment due to lighter weight and smaller volume.

In some embodiments, the beam incident on the beam scanning apparatus 10 may include: electromagnetic beams or laser beams.

In some embodiments, as shown in fig. 1, the beam scanning apparatus 10 further comprises: the frame sealing adhesive 15, the orientation film 16, the insulating layer 17 and the second substrate 18. The insulating layer 17 includes a first insulating layer 171 and a second insulating layer 172, and the alignment film 16 includes a first alignment film 161 and a second alignment film 162.

The reflective layer 12 is located on the first substrate 11. The first insulating layer 171 is located on a side of the reflective layer remote from the first substrate 11. The liquid crystal layer 13 and the electrode 14 are located on a side of the reflective layer 12 remote from the first substrate 11, the liquid crystal layer 13 and the electrode 14 are located on the same layer, and the electrode 14 is adjacent to the liquid crystal layer 13 on a plane parallel to the reflective layer 12. The second insulating layer 172 is located on a side of the liquid crystal layer 13 and the electrode 14 away from the first substrate 11. The second substrate 18 is located on a side of the second insulating layer 172 remote from the first substrate 11. The insulating layer 17 is configured to isolate the electrode 14 from other conductive structures and to ensure insulation between the electrode 14 and other conductive structures, so as to prevent abnormal contact between the electrode 14 and other conductive structures, which would result in failure to normally apply a voltage to the electrode 14, and thus prevent abnormal contact between the electrode 14 and other conductive structures, which would affect normal operation of the beam scanning apparatus 10.

The first alignment film 161 is located between the first insulating layer 171 and the liquid crystal layer 13, and the second alignment film 162 is located between the second insulating layer 172 and the liquid crystal layer 13. The first alignment film 161 and the second alignment film 162 are configured to align the liquid crystal molecules 131 within the liquid crystal layer 13 in a specific manner.

The sealant 15 is adjacent to the liquid crystal layer 13 and the electrode 14 on a plane parallel to the reflective layer 12. On a plane parallel to the reflective layer 12, the sealant 15 surrounds the liquid crystal layer 13, the electrode 14 and at least part of the insulating layer 17. Namely, in the second direction X, the sealant 15 surrounds the liquid crystal layer 13, the electrode 14 and at least part of the insulating layer 17. At the same time, the frame sealing glue 15 is also in direct contact with part of the insulating layer 17. Or in the first direction Z, the sealant 15 does not surround the insulating layer 17, and both ends of the sealant 15 are respectively in direct contact with the first insulating layer 171 and the second insulating layer 172. The frame sealing glue 15 is configured to surround the liquid crystal layer 13 and seal the liquid crystal layer 13 to prevent substances including liquid crystal molecules in the liquid crystal layer 13 from flowing out of the beam scanning apparatus 10.

In some embodiments, as shown in fig. 1, the beam scanning apparatus 10 includes at least two beam scanning apparatus units 101 arranged in an array. Each beam scanning device unit 101 includes a liquid crystal layer 13 and an electrode 14.

The beam scanning apparatus 10 includes at least two beam scanning apparatus units 101 arranged in an array, for example, the beam scanning apparatus 10 may include two beam scanning apparatus units 101 arranged in an array, or the beam scanning apparatus 10 may include three beam scanning apparatus units 101 arranged in an array, or the beam scanning apparatus 10 may include four beam scanning apparatus units 101 arranged in an array, or the beam scanning apparatus 10 may include five beam scanning apparatus units 101 arranged in an array, or the beam scanning apparatus 10 may include six beam scanning apparatus units 101 arranged in an array, but is not limited thereto. It should be noted that the number of beam scanning apparatus units 101 included in the beam scanning apparatus 10 is not limited to the above number, and in other embodiments, the number of beam scanning apparatus units 101 included in the beam scanning apparatus 10 may be flexibly set according to actual needs.

Fig. 3 shows a schematic diagram of the structure of a single beam scanning apparatus unit 101 of the beam scanning apparatus 10, and the structure of the single beam scanning apparatus unit 101 may be described with reference to fig. 3. As shown in fig. 3, each beam scanning apparatus unit 101 includes a liquid crystal layer 13 and an electrode 14. The liquid crystal layer 13 and the electrode 14 in each beam scanning device unit 101 are located on a side of the reflective layer 12 away from the first substrate 11, the liquid crystal layer 13 and the electrode 14 are also located on a side of the first insulating layer 171 away from the first substrate 11, and the liquid crystal layer 13 and the electrode 14 are located on the same layer. And the electrode 14 is adjacent to the liquid crystal layer 13 in a plane parallel to the reflective layer 12.

Fig. 4 is a schematic diagram showing the phase modulation of an incident beam by the beam scanning apparatus unit 101 arranged in an array. As shown in fig. 2, 3 and 4, the beam scanning apparatus 10 may include a plurality of beam scanning apparatus units 101 arranged in an array. By applying different voltages to the respective electrodes 14, the respective beam scanning apparatus units 101 can be changed to have different refractive indices. Since the refractive indexes of the beam scanning apparatus units 101 are different, the phase modulation effect generated by each beam scanning apparatus unit 101 on the incident beam is also different, that is, the length of each rectangle 30 in fig. 4 is the phase modulation effect generated by each beam scanning apparatus unit 101 on the incident beam, that is, the similar grating structure effect formed by each beam scanning apparatus unit 101 on the electrode 14 is dynamically adjusted. The adjacent liquid crystal layers 13 have different phase modulation effects on the incident beam, so that the adjacent liquid crystal layers 13 can generate a phase difference on the phase of the incident beam modulation. I.e. in fig. 4, adjacent rectangles 30 have different lengths. The length difference of the rectangle 30 in fig. 4 is a phase difference generated by the adjacent liquid crystal layer 13 for the incident beam. The plurality of beam scanning apparatus units 101 arranged in an array can generate a stepwise phase difference for the phase of the incident beam modulation. That is, in fig. 4, the lengths of the plurality of rectangles 30 have a stepwise difference in length. The step-like length differences of the rectangles 30 in fig. 4 are the step-like phase differences generated by the beam scanning apparatus units 101 arranged in an array to the phase of the incident beam modulation. The plurality of beam scanning apparatus units 101 arranged in an array generate a phase difference of a ladder arrangement for the phase of the incident beam modulation, so that the wavefront of the incident beam can be changed, and further, the deflection of the beam can be realized, so that the regulation and control of the beam pointing can be realized through the beam scanning apparatus 10.

In some embodiments, as shown in fig. 2, the beam scanning apparatus 10 includes at least two beam scanning apparatus units 101 arranged in a single column array. The beam scanning apparatus units 101 are sequentially arranged in the same direction.

Specifically, fig. 2 shows a third direction Y perpendicular to the second direction X. The beam scanning apparatus units 101 are sequentially arranged in the same direction, i.e. in the second direction X, the beam scanning apparatus units 101 are sequentially arranged in sequence, whereas the beam scanning apparatus units 101 are not arranged in the third direction Y. Meanwhile, the longer each beam scanning apparatus unit 101 extends in the third direction Y, the larger the length of each beam scanning apparatus unit 101 extending in the third direction Y, the larger the numerical aperture of the beam scanning apparatus 10. The greater the flux of the steering beam of the beam scanning apparatus 10. The longer the length of each beam scanning apparatus unit 101 extending in the third direction Y, the more weight and volume of the beam scanning apparatus 10 increases, thereby making the beam scanning apparatus 10 relatively less easy to integrate into more electronic devices. Therefore, the length of each beam scanning apparatus unit 101 extending in the third direction Y can be flexibly set according to actual needs.

Although fig. 2 shows that the beam scanning apparatus 10 includes eight beam scanning apparatus units 101 sequentially arranged in the second direction X, the beam scanning apparatus 10 is not limited thereto, and the beam scanning apparatus 10 may include seven beam scanning apparatus units 101 sequentially arranged in the second direction X, or the beam scanning apparatus 10 may include nine beam scanning apparatus units 101 sequentially arranged in the second direction X. In practice, the specific number of beam scanning apparatus units 101 can be flexibly set according to actual needs.

By arranging the plurality of beam scanning device units 101 arranged in a single column array, a phase difference of step arrangement is generated on the phase of incident beam modulation through the plurality of beam scanning device units 101 arranged in the single column array, so that the wave front of the incident beam can be changed, and further, the deflection of the beam can be realized, so that the regulation and control on the beam pointing can be realized through the beam scanning device 10.

In some embodiments, as shown in fig. 1, 2 and 3, the electrodes 14 within each beam scanning apparatus unit 101 are located on opposite sides of the liquid crystal layer 13 in a plane parallel to the reflective layer 12. And the arrangement of the electrodes 14 in each beam scanning apparatus unit 101 is the same as that of the liquid crystal layer 13. Adjacent beam scanning apparatus units 101 share the electrode 14.

Specifically, the beam scanning apparatus 10 includes a plurality of beam scanning apparatus units 101 sequentially arranged in the second direction X. While adjacent beam scanning means units 101 may share an electrode 14, i.e. between the ringing liquid crystal layers 13, only one electrode 14 may be provided. By doing so, the number of electrodes 14 provided in the beam scanning apparatus 10 can be reduced, and thus, the structure of the beam scanning apparatus 10 can be simplified, and further, the manufacturing cost, weight, and size of the beam scanning apparatus 10 can be further reduced, while the lighter weight and smaller volume further make the beam scanning apparatus 10 easy to integrate into more electronic devices.

In some embodiments, as shown in fig. 2, the beam scanning apparatus 10 further includes a chip 20 and a circuit board 21. Wherein the chip 20 is electrically connected to the circuit board 21, and the chip 20 is also electrically connected to the electrodes 14. The circuit board 21 is configured to transmit electrical signals to the chip 20. The chip 20 is configured to apply respective voltages to the respective electrodes 14 in accordance with the electrical signals transmitted by the circuit board 21 to modulate the phase of the beam.

In some embodiments, fig. 5 shows a top view of another beam scanning apparatus 10. As shown in fig. 5, the beam scanning apparatus 10 includes at least four beam scanning apparatus units 101 arranged in an array. The beam scanning apparatus units 101 are sequentially arranged in order in at least two directions.

Specifically, each beam scanning apparatus unit 101 includes a liquid crystal layer 13, an electrode 14, and a frame sealing adhesive 15. Each beam scanning apparatus unit 101 may include two electrodes 14, and the two electrodes 14 are respectively located at both sides of the liquid crystal layer 13 of the beam scanning apparatus unit 101. The frame sealing glue 15 is located between the two electrodes 14 and connects the two electrodes 14. After the frame sealing glue 15 is connected to the two electrodes 14, an enclosure is formed by enclosing, and the liquid crystal layer 13 is located in the enclosure. While the beam scanning apparatus 10 includes at least four beam scanning apparatus units 101, i.e., the beam scanning apparatus 10 may include four beam scanning apparatus units 101, or the beam scanning apparatus 10 may include nine beam scanning apparatus units 101, or the beam scanning apparatus 10 may include sixteen beam scanning apparatus units 101, or the beam scanning apparatus 10 may include twenty-five beam scanning apparatus units 101, or the beam scanning apparatus 10 may include thirty-six beam scanning apparatus units 101, but is not limited thereto.

It should be noted that the number of beam scanning apparatus units 101 included in the beam scanning apparatus 10 is merely exemplary, and in practice, the number of beam scanning apparatus units 101 included in the beam scanning apparatus 10 may be flexibly set according to actual needs. Meanwhile, if the number of the beam scanning apparatus units 101 included in the beam scanning apparatus 10 is less than four, the number of the beam scanning apparatus units 101 cannot meet the requirement for two-dimensional modulation of the beam, that is, the requirement for modulating the phase of the beam in the second direction X and the third direction Y at the same time, so as to expand the adjustment range of the beam scanning apparatus 10 for beam pointing.

In fig. 5, the beam scanning apparatus units 101 are sequentially arranged in order in at least two directions. That is, the beam scanning apparatus units 101 are sequentially arranged in the second direction X and the third direction Y. It should be noted that the beam scanning apparatus units 101 may be arranged in other array arrangements as well, and are not limited to being sequentially arranged in order in only two directions as shown in fig. 5.

By arranging the beam scanning device units 101 sequentially arranged along at least two directions, the beam phase can be regulated and controlled in the second direction X and the third direction Y, so that the regulation and control range of the beam scanning device 10 on the beam pointing can be enlarged by regulating and controlling the beam phase in the second direction X and the third direction Y, and the beam scanning device 10 can regulate and control the beam pointing more accurately. Meanwhile, the length of each beam scanning device unit 101 of the beam scanning device 10 is smaller than that of the beam scanning device 10 in which the beam scanning device units 101 are arranged only in a single column array, so that the resolution and the precision of the beam scanning device 10 for adjusting and controlling the beam pointing direction can be further improved, and the beam scanning device 10 can achieve more accurate beam adjustment and scanning.

In some embodiments, as shown in fig. 5, when the number of beam scanning apparatus units 101 included in the beam scanning apparatus 10 is small, for example, when the beam scanning apparatus 10 includes four beam scanning apparatus units 101, or when the beam scanning apparatus 10 includes nine beam scanning apparatus units 101. Since the number of beam scanning apparatus units 101 is small, the number of electrodes 14 of each beam scanning apparatus unit 101 is smaller than the number of pins of the chip 20. Thus, the electrodes 14 of each beam scanning apparatus unit 101 can be directly electrically connected to the chip 20. To apply a voltage to the electrodes 14 through the chip 20 to effect adjustment of the refractive index of each beam scanning apparatus unit 101.

While the beam scanning apparatus 10 includes a larger number of beam scanning apparatus units 101, for example, when the beam scanning apparatus 10 includes sixteen beam scanning apparatus units 101, or when the beam scanning apparatus 10 includes twenty-five beam scanning apparatus units 101, or when the beam scanning apparatus 10 includes thirty-six beam scanning apparatus units 101. Since the number of beam scanning apparatus units 101 is large, the number of electrodes 14 of each beam scanning apparatus unit 101 is larger than the number of pins of the chip 20. Therefore, the number of pins of the chip 20 is insufficient to support connection with the electrodes 14 of the respective beam scanning apparatus units 101. Thus, control can be performed by providing the control circuit array 22. For example, the control circuit array 22 shown in fig. 5 includes a plurality of first circuits 221 extending in the second direction X, and a plurality of second circuits 222 extending in the third direction Y. Each first circuit 221 is electrically connected to one of the two electrodes 14 of each beam scanning apparatus unit 101, and each second circuit 222 is electrically connected to the other of the two electrodes 14 of each beam scanning apparatus unit 101. And the chip 20 is electrically connected to each of the first circuit 221 and the second circuit 222. The control circuit array 22 can realize pixelation control of each beam scanning device unit 101 with fewer circuits, so that the number of circuits to be connected is smaller than the number of pins of the chip 20, and voltage is applied to the electrode 14 through the chip 20, thereby realizing adjustment of refractive index of each beam scanning device unit 101.

In some embodiments, the beam scanning apparatus 10 is configured to modulate a beam incident on the beam scanning apparatus 10, the modulated beam satisfying the following equation:

Where λ is the wavelength of the incident beam, d is the thickness of the liquid crystal layer 13, and n (z) is the refractive index of each beam scanning apparatus unit 101. Through the above formula, the target phases to which the beams are modulated can be obtained according to the requirements, and the refractive indexes to which the beam scanning apparatus units 101 need to be adjusted can be obtained, so that the beam scanning apparatus 10 can accurately adjust the refractive indexes of the beam scanning apparatus units 101 according to the target phases to which the beams are modulated according to the requirements, and further, the accurate modulation of the beam phases can be realized, so that the regulation and control of the beam pointing can be realized through the beam scanning apparatus 10.

Meanwhile, fig. 6 shows the relationship between the exit angle of the modulated infrared light beam having a wavelength of 0.805 nm exiting the beam scanning apparatus 10 and the refractive index of the beam scanning apparatus unit 101. In the graph shown in fig. 6, the ordinate indicates the exit angle of the beam after modulation from the beam scanning apparatus, and the abscissa indicates the refractive index of the beam scanning apparatus unit 101. The chart shown in fig. 6 can further enable the beam scanning device 10 to accurately adjust the refractive index of each beam scanning device unit 101 according to the target phase modulated by the beam according to the requirement, so that the accurate modulation of the beam phase can be further realized, and the regulation and control of the beam direction can be realized through the beam scanning device 10.

In some embodiments, the reflective layer 12 has a thickness of 2 microns to 10 microns.

Specifically, the thickness of the reflective layer 12 may be 2 micrometers, or the thickness of the reflective layer 12 may be 4 micrometers, or the thickness of the reflective layer 12 may be 6 micrometers, or the thickness of the reflective layer 12 may be 8 micrometers, or the thickness of the reflective layer 12 may be 10 micrometers, but is not limited thereto.

In some embodiments, the material of the reflective layer 12 includes copper, aluminum, molybdenum, manganese, or silver. When the material of the reflective layer 12 is any one or more of copper, aluminum, molybdenum, manganese, or silver, the reflective layer 12 can have a superior reflection effect on the beam.

In some embodiments, the length of the liquid crystal layer 13 extending in a direction away from the first substrate 11 is its thickness, and the length of the electrode 14 extending in a direction away from the first substrate 11 is its height. The thickness of the liquid crystal layer 13 is equal to the height of the electrode 14, and the thickness of the liquid crystal layer 13 and the height of the electrode 14 are 5 micrometers to 20 micrometers.

Specifically, the thickness of the liquid crystal layer 13 and the height of the electrode 14 are 5 micrometers, or the thickness of the liquid crystal layer 13 and the height of the electrode 14 are 10 micrometers, or the thickness of the liquid crystal layer 13 and the height of the electrode 14 are 15 micrometers, or the thickness of the liquid crystal layer 13 and the height of the electrode 14 are 20 micrometers, but not limited thereto.

In some embodiments, fig. 7 shows a schematic diagram of another beam scanning apparatus 10. As shown in fig. 7, the reflective layer 12 is parabolic in shape, the paraboloid including a concave surface 121. The concave surface 121 faces the side where the liquid crystal layer 13 and the electrode 14 are provided, and the concave surface 121 faces away from the side where the first substrate 11 is provided.

By forming the reflecting layer 12 in a parabolic shape, and the parabolic surface includes the concave surface 121, the light beam emitted through the focal point thereof can be changed into parallel light emission by reflection of the parabolic surface according to the characteristics of the parabolic surface. Therefore, by this means, the incident light can be emitted as the parallel light whose direction is controllable by being reflected by the reflection layer 12 after the phase modulation by the beam scanning device 10.

In order to clearly show the layers of the beam scanning apparatus 10, the second insulating layer 172, the alignment film 16, and other layers are not shown in fig. 7, but it is conceivable that these layers are actually provided.

In some embodiments, the first substrate 11 and the first insulating layer 171 are parabolic in shape. Since the reflective layer 12 has a parabolic shape, the first substrate 11 and the first insulating layer 171 also need to be provided in a parabolic shape.

In some embodiments, the liquid crystal layer 13 and the electrode 14 are shaped to conform to the concave surface 121 on the side facing the first substrate 11. By this arrangement, it is ensured that the beam is incident on the reflective layer 12 after being modulated by the electrode 14 and the liquid crystal layer 13, and thus, the beam after being modulated by the electrode 14 and the liquid crystal layer 13 can be matched with the parabolic shape of the reflective layer 12, thereby forming a better reflection effect. Meanwhile, the cross talk generated between the beams due to the fact that the beams cannot be incident to the reflecting layer 12 immediately after being modulated by the electrode 14 and the liquid crystal layer 13 can be avoided.

In some embodiments, the materials of the first insulating layer 171 and the second insulating layer 172 include silicon nitride.

The application also provides an electronic device comprising any of the beam scanning apparatuses 10 described above.

In some embodiments, fig. 8 illustrates a partial structure of an electronic device. As shown in fig. 8, the electronic device comprises at least two beam scanning means 10. At least two beam scanning apparatuses 10 are connected to each other and face at least two different directions.

In particular, the electronic device may comprise four beam scanning apparatuses 10, the four beam scanning apparatuses 10 being connected to each other, and the four beam scanning apparatuses 10 being oriented in four different directions. In this way, a larger range of scanning can be achieved without mechanical elements.

In order to clearly show the arrangement of the beam scanning apparatus 10, the insulating layer 17, the alignment film 16, and other film layers are not shown in fig. 8, but it is conceivable that these film layers are actually arranged.

The above embodiments of the present application may be complementary to each other without collision.

It is noted that in the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Moreover, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or intervening layers may be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may be present. In addition, it will be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intervening layer or element may also be present. Like reference numerals refer to like elements throughout.

The term "plurality" refers to two or more, unless explicitly defined otherwise.

Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.

It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims (15)

1. A beam scanning apparatus, comprising: the liquid crystal display comprises a first substrate, a reflecting layer, a liquid crystal layer and an electrode;

The reflective layer is positioned between the first substrate and the liquid crystal layer; the liquid crystal layer and the electrode are positioned on one side of the reflecting layer away from the first substrate;

The liquid crystal layer and the electrode are positioned on the same layer; and the electrode is adjacent to the liquid crystal layer on a plane parallel to the reflective layer; the reflection layer is configured to reflect a beam incident to the reflection layer from a side of the reflection layer toward the liquid crystal layer.

2. The beam scanning apparatus of claim 1 wherein the beam scanning apparatus comprises at least two beam scanning apparatus units arranged in an array; each beam scanning device unit comprises the liquid crystal layer and the electrode.

3. The beam scanning apparatus of claim 2 wherein said beam scanning apparatus comprises at least two of said beam scanning apparatus units arranged in a single column array; the beam scanning device units are sequentially arranged along the same direction.

4. A beam scanning device according to claim 3, wherein the electrodes in each of the beam scanning device units are located on opposite sides of the liquid crystal layer in a plane parallel to the reflective layer; the arrangement mode of the electrodes in each beam scanning device unit and the liquid crystal layer is the same;

adjacent ones of the beam scanning apparatus units share the electrode.

5. The beam scanning apparatus of claim 2 wherein said beam scanning apparatus comprises at least four of said beam scanning apparatus units arranged in an array; the beam scanning device units are sequentially arranged along at least two directions.

6. The beam scanning apparatus of claim 2 wherein the beam scanning apparatus is configured to modulate a beam incident on the beam scanning apparatus, the modulated beam satisfying the following equation:

where λ is the wavelength of the incident beam, d is the thickness of the liquid crystal layer, and n (z) is the refractive index of each beam scanning apparatus unit.

7. The beam scanning apparatus of claim 1 wherein the reflective layer has a thickness of 2 microns to 10 microns.

8. The beam scanning apparatus of claim 7 wherein the material of the reflective layer comprises copper, aluminum, molybdenum, manganese, or silver.

9. The beam scanning apparatus according to claim 1, wherein a length of the liquid crystal layer extending in a direction away from the first substrate is a thickness thereof, and a length of the electrode extending in a direction away from the first substrate is a height thereof; the thickness of the liquid crystal layer is equal to the height of the electrode, and the thickness of the liquid crystal layer and the height of the electrode are 5 micrometers to 20 micrometers.

10. The beam scanning apparatus of claim 1 wherein the reflective layer is parabolic in shape, the parabolic surface comprising a concave surface; the concave surface faces to one side provided with the liquid crystal layer and the electrode, and the concave surface faces away from one side provided with the first substrate.

11. The beam scanning device of claim 10, wherein the liquid crystal layer and the electrode have a contour conforming to the concave surface on a side facing the first substrate.

12. The beam scanning apparatus of claim 1 wherein the beam scanning apparatus further comprises: the first insulating layer, the second insulating layer and the second substrate;

the first insulating layer is positioned between the liquid crystal layer and the reflecting layer, the second insulating layer is positioned on one side of the liquid crystal layer far away from the first insulating layer, and the second substrate is positioned on one side of the second insulating layer far away from the liquid crystal layer.

13. The beam scanning apparatus of claim 12 wherein the material of the first insulating layer and the second insulating layer comprises silicon nitride.

14. An electronic device comprising the beam scanning apparatus of any one of claims 1 to 13.

15. The electronic device of claim 14, wherein the electronic device comprises at least two of the beam scanning apparatus; at least two of the beam scanning apparatuses are connected to each other and face at least two different directions.