CN1180879A - Field emission display device - Google Patents
Field emission display device Download PDFInfo
- Publication number
- CN1180879A CN1180879A CN97114550A CN97114550A CN1180879A CN 1180879 A CN1180879 A CN 1180879A CN 97114550 A CN97114550 A CN 97114550A CN 97114550 A CN97114550 A CN 97114550A CN 1180879 A CN1180879 A CN 1180879A
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- China
- Prior art keywords
- negative electrode
- meron
- little
- resistive layer
- display device
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Abstract
The present invention discloses a field emission display device, wherein the shortest distance between the cathode and micro tip varies according to the distance between the resistance layer and connection point of power connecting to the cathode of the power. In addition, the density of the micro tip formed in each unit becomes higher with the farther between the resistance layer and connection point. Furthermore, the size of opens formed in the grids becomes smaller with the farther between the resistance layer and connection point.
Description
The present invention relates to have the field-emission display device of improved resistive layer structure, more specifically, relate to field-emission display device with the improvement structure that is used to compensate the voltage drop that the increase with the distance between resistive layer that has little tip and the cathode power tie point occurs.
Field emission shows that (FED) device is a kind of like this device, promptly form highfield and form image, and will focus on from the electron beam that send at little tip on the anode so that the luminescent material that is coated on the anode sends light by between door and little tip, applying positive voltage.The FED device can be used as planar display, or is used for for example having replaced the cold cathode electron beam transmitter of the thermionic emitters of cathode-ray tube (CRT).
The schematic construction of conventional FED device is shown in Fig. 1 and 2.With reference to the accompanying drawings, the negative electrode 12 of bar shaped is located on the upper surface of meron 11.Segmentation forms resistive layer 18 by a part of removing negative electrode, fills the part of removing with resistance material simultaneously.
A plurality of little most advanced and sophisticated 13 are formed on the resistive layer 18.Little tip is conical and is grouped into the little most advanced and sophisticated unit of predetermined number.Alleged " unit group " is made of little most advanced and sophisticated 13 of resistive layer 18 and predetermined number formed thereon in instructions and the claim.In addition, several groups (for example four of Fig. 1 groups) form a pixel " A ".
An insulation course 14 is located on the entire upper surface of negative electrode 12.Make little most advanced and sophisticated 13 from wherein outstanding by the hole 14a that is formed on the insulation course 14.Grizzly bar 15 is located on the insulation course 14 perpendicular to cathode strip 12.A plurality of opening 15a are formed in the grid 15 to expose little most advanced and sophisticated 13.The zone that marks with " A " is the part that forms single pixel, is equivalent to the cross section of negative electrode 12 and grid 15.
Before substrate 21 (see figure 2)s with its on be formed with cathode construction meron 11 separate a predetermined distance.Spaces preceding and meron 21 and 11 formation are made into vacuum.Preceding substrate 21 is made by the transparent material of for example glass and so on, and as shown in Figure 2, anode 22 is formed under the preceding substrate 21.Anode 22 be configured to corresponding to the opening 15a from grid 15 expose little most advanced and sophisticated 13, and luminescent layer 23 is applied to the lower surface of anode.
In the field-emission display device with this structure of routine, electronics is accumulated at anode 22 from little most advanced and sophisticated 13 emissions and ejected electron owing to the electric field of the generation of the potential difference (PD) between grid 15 and little most advanced and sophisticated 13.Then, the luminescent layer 23 that the electron impact of accumulation is coated in anode 22 surfaces to be sending light, thereby forms image.
Fig. 3 is illustrated in detail in the design of little most advanced and sophisticated 13 in the conventional field-emission display device.Herein, identical with preceding figure label is represented identical parts.Label 35 representatives are connected to the power connection points of the negative electrode 12 of power supply.In addition, label 13
1, 13
2, 13
3..., 13
nRepresentative is formed on the little tip in each corresponding units group, and wherein the unit group is provided with in proper order from the power connection points of negative electrode 12.Label d
1, d
2..., d
nRepresentative from the border between negative electrode 12 and the resistive layer 18 to corresponding little most advanced and sophisticated 13
1-13
nBee-line, i.e. negative electrode 12 and corresponding little most advanced and sophisticated 13 in each unit group
1-13
nBetween bee-line.
According to routine techniques, negative electrode 12 and corresponding little most advanced and sophisticated 13
1-13
nBetween bee-line be expressed from the next:
d
1＝d
2＝...＝d
n
That is, do not consider power connection points 35 and little most advanced and sophisticated 13
1-13
nBetween distance, each are little most advanced and sophisticated 13 years old
1-13
nBe set at the distance that equates apart from negative electrode 12.
But, above-mentioned little most advanced and sophisticated 13
1-13
nDesign problem is arranged.That is, by negative electrode 12 be applied to each little most advanced and sophisticated 13
1-13
nVoltage reduce further from power connection points 35 along with little tip becomes, this is because due to the resistance of negative electrode 12 itself.Thereby the brightness of each pixel " A " (see figure 1) changes according to the distance between negative electrode 12 and the power connection points 35.That is to say, comprise that being positioned at connects and be bordering on negative electrode 12 power connection points 35 little most advanced and sophisticated 13
1The pixel brightness height, and comprise that little most advanced and sophisticated 35 the pixel brightness that is positioned at relatively away from locating is low.Finally, thus this brightness that influences whole image causes the quality of display device to reduce.
In addition, because the density of little most advanced and sophisticated 13 (see figure 2)s is uniformly with respect to each unit group,, the distance between resistive layer 18 and the power connection points 35 can not be compensated because of increasing the voltage drop that produces.This has also caused the irregular brightness of whole image.
For overcoming the problems referred to above, the purpose of this invention is to provide a kind of field-emission display device, wherein the distance between negative electrode and the little tip is configured to change according to the distance between power connection points and the resistive layer, so that improve the brightness of whole image.
Another object of the present invention provides a kind of field-emission display device, and wherein, the density that is formed on the little tip in the resistive layer changes according to the distance between power connection points and the resistive layer.
A further object of the present invention provides a kind of field-emission display device, and wherein, the size that is formed on the opening in the grid changes according to the distance between power connection points and the resistive layer.
Therefore, for finishing first purpose, a kind of field-emission display device is provided, has comprised: a meron, one is formed on negative electrode on the meron with bar shaped, segmentation is filled in the resistive layer in the negative electrode, a plurality of little tips that are formed on the resistive layer, one allows little tip therefrom to stretch out by its hole and is arranged on insulation course on the negative electrode, one has opening to expose little tip and to be arranged on the insulation course and the grid that intersect with negative electrode with bar shaped, a preceding substrate that is provided with meron interval preset distance, one is formed on preceding substrate face to the lip-deep anode of meron and the luminescent layer of coated anode; Wherein, the distance between negative electrode and the little tip changes according to the distance between resistive layer and negative electrode and the power connection points that power supply is connected.
The bee-line of preferably supposing little tip in each section and negative electrode is respectively by d
1, d
2..., d
nExpression because little tip and power connection points are spaced apart, is satisfied d
1＞d
2＞...＞d
nRelation.
For finishing second purpose, a kind of field-emission display device is provided, has comprised: a meron, one is formed on negative electrode on the meron with bar shaped, segmentation is filled in the resistive layer in the negative electrode, a plurality of little tips that are formed on the resistive layer, one allows little tip therefrom to stretch out by its hole and is arranged on insulation course on the negative electrode, one has opening to expose little tip and to be arranged on the insulation course and the grid that intersect with negative electrode with bar shaped, a preceding substrate that is provided with meron interval preset distance, one is formed on preceding substrate face to the lip-deep anode of meron and the luminescent layer of coated anode; Wherein, be formed on the density at the little tip in each unit group along with resistive layer uprises further from power connection points.
For finishing the 3rd purpose, a kind of field-emission display device is provided, has comprised: a meron, one is formed on negative electrode on the meron with bar shaped, segmentation is filled in the resistive layer in the negative electrode, a plurality of little tips that are formed on the resistive layer, one allows little tip therefrom to stretch out by its hole and is arranged on insulation course on the negative electrode, one has opening to expose little tip and to be arranged on the insulation course and the grid that intersect with negative electrode with bar shaped, a preceding substrate that is provided with meron interval preset distance, one is formed on preceding substrate face to the lip-deep anode of meron and the luminescent layer of coated anode; Wherein, be formed on the size of the opening in the grid along with resistive layer diminishes further from power connection points.
Above-mentioned purpose of the present invention and advantage will be clearer by the embodiment that describes in detail below with reference to accompanying drawing.
Fig. 1 is the perspective diagram that conventional field-emission display device is shown, and has wherein omitted anode construction;
Fig. 2 is the schematic cross-section that field-emission display device shown in Figure 1 is shown;
Fig. 3 illustrates schematic cross-section with the part of field-emission display device shown in 2 so that the design at little tip to be described;
Fig. 4 illustrates the schematic cross-section of field-emission display device according to an embodiment of the invention;
Fig. 5 illustrates the schematic exploded perspective view of field-emission display device in accordance with another embodiment of the present invention;
Fig. 6 is the schematic exploded perspective view that the field-emission display device of another embodiment according to the present invention is shown.
Similar according to field-emission display device of the present invention and field-emission display device shown in Figure 1.With reference to figure 4, field-emission display device according to the present invention comprises cathode construction 40 and anode construction 50.Cathode construction 40 comprises meron 41, be formed on negative electrode 42, segmentation on the meron 41 with bar shaped is filled in resistive layer 48 in the negative electrode
1, 48
2..., 48
n, be formed on resistive layer 48
1, 48
2..., 48
nOn a plurality of little most advanced and sophisticated 43
1, 43
2..., 43
n, be arranged on the negative electrode 42 and have therein hole 44a by with allow each little most advanced and sophisticated 41
1-43
nThe insulation course 44 that passes and form and with bar shaped be arranged on the insulation course 44 with intersect with negative electrode 42 and have therein opening 45a be used to expose each little most advanced and sophisticated 41
1-43
nGrid 45.Negative electrode 42 forms pixel " A " (seeing figure) with the part that grid 45 intersect.
Space before being formed between substrate 51 and the meron 41 is maintained at vacuum state.Preferably, for example transparent material manufacturing of glass and so on of preceding substrate 51 usefulness.
One of the present invention is characterised in that negative electrode 42 and little most advanced and sophisticated 41
1-43
nBetween bee-line (D
1, D
2..., D
n) according to little most advanced and sophisticated 41
1-43
nThe position and change.That is to say negative electrode 42 and little most advanced and sophisticated 41
1-43
nBetween bee-line D
1, D
2..., D
nAccording to resistive layer 48
1-48
nAnd the distance between the power connection points that is connected to power supply 65 of negative electrode 42 and be set at difference, this can represent with following formula:
D
1＞D
2＞......＞D
n
That is to say, be positioned at relatively resistive layer 48 near power connection points 65
1In negative electrode 42 and little most advanced and sophisticated 43
1Between bee-line D
1Be set to greater than being positioned at relative resistive layer 48 away from power connection points 65
2-48
nIn negative electrode 42 and little most advanced and sophisticated 43
2-43
nBetween bee-line D
2-D
n
Dimension although the distance between each pixel " A " (see figure 1) and the power connection points 65 is different, is applied to and is included in little most advanced and sophisticated 43 in each pixel " A "
1-43
nIt is quite even that voltage can be held.Bee-line (D
1, D
2..., D
n) ratio that successively decreases can suitably be controlled in the scope so that can keep being applied to all little most advanced and sophisticated 43
1-43
nVoltage be uniform.High relatively voltage is applied to the resistive layer 48 near power connection points 65
1Therefore, by with little most advanced and sophisticated 43
1Spaced apart with negative electrode 42, resistive layer 48
1Has higher resistance.On the contrary, low relatively voltage is applied to the resistive layer 48 away from power connection points 65
nTherefore, by making little most advanced and sophisticated 43
nMore near negative electrode 42, resistive layer 48
nCan have low resistance.The result is, uniform voltage can be applied to all little most advanced and sophisticated 43
1-43
n
According to another embodiment of the invention, separate the voltage drop that produces and can be formed on the little most advanced and sophisticated density in each resistive layer and compensated owing to resistive layer and power connection points by change.Thereby it is even that the brightness of whole image becomes.This embodiment will describe with reference to figure 5.Herein, the label identical with earlier drawings represented identical parts, and label 51,52,53 is represented preceding substrate, anode and luminescent layer respectively.
With reference to figure 5, the density that is formed on little most advanced and sophisticated 63 in the unit group increases along with the increase of distance between resistive layer 18 and power connection points 65 (see figure 4)s.That is, be formed on be arranged in relatively away from little most advanced and sophisticated 63 number of the resistive layer 18 at power connection points 65 places more than being formed on the number that is arranged in relatively near little tip of the resistive layer 18 at power connection points 65 places.Thereby, be formed on each pixel A
1, A
2...., A
nIn little most advanced and sophisticated 63 density along with pixel (A
1-A
n) uprise away from power connection points 65.
In the operation of field-emission display device in accordance with another embodiment of the present invention, when power supply is applied to power connection points 65, because the resistance of negative electrode 42 itself is applied to the pixel " A that is positioned at away from power connection points 65
n" little most advanced and sophisticated 63 the voltage decreases located.But, owing to be included in pixel " A
n" in little most advanced and sophisticated 63 density height, so can compensated voltage drop.
With reference to Fig. 6 another embodiment of the present invention is described, wherein along with the voltage drop that resistance produces away from power connection points is compensated.Herein, label itself identical parts identical with aforementioned figures.
With reference to figure 6, pixel A
1-A
nBe positioned at away from power connection points 65 (see figure 4)s, be formed on and be used to allow little most advanced and sophisticated 13 each openings 71 that pass in the grid 15
1, 71
2..., 71
nSize decreases.Change opening 71
1-71
nThe effect that size obtained and above-mentioned similar with reference to figure 3 and 4 described embodiment.Therefore, because the voltage drop that produces because of negative electrode 12 resistance own can be compensated, then being applied to all little voltages of most advanced and sophisticated 13 can Be Controlled get evenly.
Preferably, opening 71
1-71
nSize suitably is controlled in the scope, can be held even so that be applied to all little voltages of most advanced and sophisticated 13.
As mentioned above, according to according to field-emission display device of the present invention, the voltage drop that is applied to the isolated little tip of power connection points owing to the resistance of negative electrode itself is compensated, and is even relatively so that the voltage Be Controlled at all little tips gets.Therefore, although the position difference of each pixel, the brightness of pixel can be uniformly, thereby has improved visual quality.
Claims (4)
1. field-emission display device comprises:
A meron;
One is formed on negative electrode on the described meron with bar shaped;
Segmentation is filled in the resistive layer in the described negative electrode;
A plurality of little tips that are formed on the described resistive layer;
One allows described little tip therefrom to stretch out by its hole and is arranged on insulation course on the described negative electrode;
One has opening to expose described little tip and to be arranged on the described insulation course and the grid that intersect with described negative electrode with bar shaped;
A preceding substrate that is provided with described meron interval preset distance;
A lip-deep anode that is formed on described preceding substrate face to described meron; With
Apply the luminescent layer of described anode;
Wherein, the distance between described negative electrode and the described little tip changes according to the distance between described resistive layer and described negative electrode and the power connection points that power supply is connected.
2. field-emission display device according to claim 1, the bee-line that it is characterized in that supposing described little tip in each section on each described resistive layer and described negative electrode is respectively by d
1, d
2..., d
nExpression because described little tip and described power connection points are spaced apart, is satisfied d therein
1＞d
2＞...＞d
nRelation.
3. field-emission display device comprises:
A meron;
One is formed on negative electrode on the described meron with bar shaped;
Segmentation is filled in the resistive layer in the described negative electrode;
A plurality of little tips that are formed on the described resistive layer;
One allows described little tip therefrom to stretch out by its hole and is arranged on insulation course on the described negative electrode;
One has opening to expose described little tip and to be arranged on the described insulation course and the grid that intersect with described negative electrode with bar shaped;
A preceding substrate that is provided with described meron interval preset distance;
A lip-deep anode that is formed on described preceding substrate face to described meron; With
Apply the luminescent layer of described anode;
Wherein, be formed on the density at the described little tip in each unit group along with described resistive layer uprises further from power connection points.
4. field-emission display device comprises:
A meron;
One is formed on negative electrode on the described meron with bar shaped;
Segmentation is filled in the resistive layer in the described negative electrode;
A plurality of little tips that are formed on the described resistive layer;
One allows described little tip therefrom to stretch out by its hole and is arranged on insulation course on the described negative electrode;
One has opening to expose described little tip and to be arranged on the described insulation course and the grid that intersect with described negative electrode with bar shaped;
A preceding substrate that is provided with described meron interval preset distance;
A lip-deep anode that is formed on described preceding substrate face to described meron; With
Apply the luminescent layer of described anode;
Wherein, be formed on the size of the described opening in the described grid along with described resistive layer diminishes further from power connection points.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR27526/96 | 1996-07-08 | ||
| KR1019960027526A KR100224742B1 (en) | 1996-07-08 | 1996-07-08 | Field electron emission display |
| KR1019960027527A KR100224743B1 (en) | 1996-07-08 | 1996-07-08 | Field emission display device with an improved horisontal resistance layer |
| KR27527/1996 | 1996-07-08 | ||
| KR27526/1996 | 1996-07-08 | ||
| KR27527/96 | 1996-07-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1180879A true CN1180879A (en) | 1998-05-06 |
| CN1145914C CN1145914C (en) | 2004-04-14 |
Family
ID=26631997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971145504A Expired - Fee Related CN1145914C (en) | 1996-07-08 | 1997-07-08 | Field emission display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1145914C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322480C (en) * | 2001-12-27 | 2007-06-20 | 株式会社东芝 | Method of manufacturing flat display apparatus |
| CN103337441A (en) * | 2013-04-27 | 2013-10-02 | 中国人民解放军北京军区总医院 | X-ray tube based on field emission of LaB6 nano material and mobile CT (computer tomography) scanner |
| CN103337443A (en) * | 2013-04-27 | 2013-10-02 | 中国人民解放军北京军区总医院 | X-ray source for medical testing and mobile CT (computer tomography) scanner |
| CN103340641A (en) * | 2013-04-27 | 2013-10-09 | 中国人民解放军北京军区总医院 | System and method for pulse imaging of CT scanner |
-
1997
- 1997-07-08 CN CNB971145504A patent/CN1145914C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1322480C (en) * | 2001-12-27 | 2007-06-20 | 株式会社东芝 | Method of manufacturing flat display apparatus |
| CN103337441A (en) * | 2013-04-27 | 2013-10-02 | 中国人民解放军北京军区总医院 | X-ray tube based on field emission of LaB6 nano material and mobile CT (computer tomography) scanner |
| CN103337443A (en) * | 2013-04-27 | 2013-10-02 | 中国人民解放军北京军区总医院 | X-ray source for medical testing and mobile CT (computer tomography) scanner |
| CN103340641A (en) * | 2013-04-27 | 2013-10-09 | 中国人民解放军北京军区总医院 | System and method for pulse imaging of CT scanner |
| CN103337443B (en) * | 2013-04-27 | 2016-05-18 | 中国人民解放军北京军区总医院 | Medical science detects with x-ray source and mobile CT scanner |
| CN103340641B (en) * | 2013-04-27 | 2016-06-08 | 中国人民解放军北京军区总医院 | CT scanner Pulse Imageing system and Pulse Imageing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1145914C (en) | 2004-04-14 |
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| SE01 | Entry into force of request for substantive examination | ||
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Granted publication date: 20040414 Termination date: 20120708 |