CN118087024A - Device and method for assisting melting - Google Patents
Device and method for assisting melting Download PDFInfo
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- CN118087024A CN118087024A CN202410154648.8A CN202410154648A CN118087024A CN 118087024 A CN118087024 A CN 118087024A CN 202410154648 A CN202410154648 A CN 202410154648A CN 118087024 A CN118087024 A CN 118087024A
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- crucible
- heating
- auxiliary
- assisting
- heating mechanism
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- 238000002844 melting Methods 0.000 title claims abstract description 30
- 230000008018 melting Effects 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 166
- 230000007246 mechanism Effects 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000004321 preservation Methods 0.000 claims description 30
- 230000006698 induction Effects 0.000 claims description 14
- 239000012768 molten material Substances 0.000 claims description 6
- 230000003028 elevating effect Effects 0.000 claims description 2
- 239000000155 melt Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010309 melting process Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- -1 magnesium aluminate Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to an apparatus and method for assisting in melting. The device is arranged in a furnace body for crystal growth by a pulling method, a crucible is arranged in the furnace body, and the device comprises an auxiliary heating mechanism and a lifting mechanism. The auxiliary heating mechanism is arranged above the crucible and can be contacted with the end face of the open end of the crucible. The lifting mechanism is used for driving the auxiliary heating mechanism to lift above the crucible. According to the device for assisting the melting material, provided by the invention, when the melting material is melted, the opening end of the crucible is heated through the auxiliary heating mechanism, so that the temperature gradient of the upper part and the lower part of the crucible in the melting process is reduced, the raw materials of the upper part and the lower part in the crucible are synchronously melted, the pressure of a melt on the bottom and the side surface of the crucible is reduced, the deformation of the crucible is further prevented, and the normal production of crystals is ensured.
Description
Technical Field
The invention relates to the technical field of crystal growth, in particular to a device and a method for assisting melting.
Background
The Czochralski method is a method of pulling a high-quality single crystal from a melt, which was invented by Czochralski (J.Czochralski) in 1917. The Czochralski method can obtain proper natural convection and forced convection through the adjustment of a temperature field and the full use of the stirring effect of crystal rotation, so that effective impurity transportation can be performed, which is an advantage not possessed by other currently reported crystal growth methods. In addition, the crucible is not contacted with the crystal during the growth of the pulling method, so that parasitic nucleation and growth stress can be reduced, and the quality of the crystal is improved. The Czochralski method is now the most important technique for growing single crystals, especially for semiconductors and optical crystals in the photovoltaic field.
The crystal growth by the pulling method firstly needs to melt raw materials, when the raw materials are melted, particularly secondary melting, the raw materials at the bottom of a crucible are melted firstly due to the existence of a temperature gradient, the volume of the melted raw materials is increased, when the raw materials are not melted, the melt can apply pressure to the side wall and the bottom of the crucible, the crucible is deformed, and when the size of the crucible is larger, the crucible deformation is more obvious. The deformed crucible not only changes the temperature gradient and the cold center position of crystal growth, but also causes problems such as leakage, etc., so that the deformed crucible needs to be reprocessed in time, which leads to an increase in crystal growth cost.
Disclosure of Invention
Based on the above, the technical problem that the crucible is easy to deform when the raw materials are melted in the crystal growth of the Czochralski method at present is solved,
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides a device for assisting melting stock, which is arranged in a furnace body for crystal growth by a pulling method, wherein a crucible is arranged in the furnace body, and the device comprises:
the auxiliary heating mechanism is arranged above the crucible and can be in contact with the end face of the open end of the crucible; and
And the lifting mechanism is used for driving the auxiliary heating mechanism to lift and lower above the crucible.
As a further improvement of the above-described aspect of the present invention, the auxiliary heating mechanism includes:
The heating cylinder is positioned above the crucible and is coaxially arranged with the crucible;
The heating piece I is sleeved outside the heating cylinder and can generate heat under the condition of electrifying; and
And the first power supply is electrically connected with the first heating element and supplies power for the first heating element.
As a further improvement of the scheme, the furnace body is a resistance heating furnace, the heating element I adopts a heating wire, and the heating wire is sleeved on the outer surface of the heat preservation cover I.
As a further improvement of the scheme, the furnace body is an induction heating furnace, the first heating element adopts an induction coil, and the induction coil is sleeved on the outer surface of the first heat preservation cover.
As a further improvement of the above aspect of the present invention, the apparatus for assisting the melting further includes:
The first heat preservation cover is arranged between the first heating element and the heating cylinder and is coaxially arranged with the crucible, the inner diameter of the first heat preservation cover is smaller than that of the crucible, and the bottom surface of the first heat preservation cover is attached to the top surface of the crucible.
As a further improvement of the scheme, the distance between the first heating element and the first heat preservation cover is not more than 10mm, and the height of the first heating element is not more than the height of the crucible and the first heat preservation cover;
And/or the material of the heating cylinder is the same as that of the crucible, the height of the heating cylinder is not more than that of the crucible and the first heat preservation cover, and the inner diameter of the heating cylinder meets the following conditions: the distance between the inner wall of the heating cylinder and the crystal to be grown is not less than 10mm.
As a further improvement of the scheme of the invention, the lifting mechanism drives the auxiliary heating mechanism to ascend by a distance not smaller than 200mm.
The invention provides an auxiliary melting method of an auxiliary melting device, which is characterized in that a crucible is internally provided with raw materials for crystal growth, a heating mechanism is arranged outside the crucible, and the auxiliary melting method comprises the following steps:
S1, a lifting mechanism drives an auxiliary heating mechanism to descend to be in contact with the end face of an opening of a crucible; starting a heating mechanism and an auxiliary heating mechanism to heat the crucible, and controlling the heating mechanism and the auxiliary heating mechanism to have consistent heating rate;
s2, after the raw materials in the crucible are completely melted, the lifting mechanism drives the auxiliary heating mechanism to ascend and the auxiliary heating mechanism stops heating;
s3, heating temperature of the heating mechanism is increased, and raw materials in the crucible are prevented from being re-solidified.
As a further improvement of the above-described aspect of the present invention, in the step S2, the elevating mechanism drives the auxiliary heating mechanism to ascend by a distance of not less than 200mm.
As a further improvement of the above-described aspect of the present invention, the heating mechanism includes:
The second heat-insulating cover is sleeved outside the crucible;
the heating element II is sleeved on the outer surface of the heat-preserving cover II; and
And the second power supply is electrically connected with the second heating element and supplies power for the second heating element.
Compared with the prior art, the invention has the following beneficial effects:
1. According to the device for assisting the melting material, provided by the invention, when the crucible is heated for melting material, the opening end of the crucible is heated through the auxiliary heating mechanism, so that the temperature gradient of the upper part and the lower part of the crucible in the melting material process is reduced, the raw materials of the upper part and the lower part in the crucible are synchronously melted, the pressure of a melt on the bottom and the side surface of the crucible is reduced, the deformation of the crucible is further prevented, and the normal operation of crystal growth is ensured.
2. The lifting mechanism drives the auxiliary heating mechanism to rise by a distance not smaller than 200mm, so that the temperature gradient of a solid-liquid interface required by crystal growth can be prevented from being damaged, and the normal growth of crystals is ensured.
Drawings
FIG. 1 is a schematic diagram of an apparatus for assisting in melting according to an embodiment of the present invention;
Fig. 2 is a cross-sectional view of an auxiliary heating mechanism in an apparatus for assisting molten material according to an embodiment of the present invention.
Reference numerals: 1. a crucible; 2. a first heat preservation cover; 3. a first heating element; 4. a heating cylinder; 5. a second heat-insulating cover; 6. and a heating element II.
Detailed Description
In order that the invention may be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments that are illustrated below. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The embodiment provides a device for assisting in melting materials, which is used for assisting in melting raw materials for crystal growth from a melting stage in the crystal growth process of a pulling method.
The furnace body for crystal growth by the Czochralski method is generally two, one is an induction heating furnace and the other is a resistance heating furnace. The furnace body is internally provided with a crucible 1, raw materials for crystal growth are arranged in the crucible 1, a second heat preservation cover 5 for heat preservation is arranged outside the crucible 1, a second heating element 6 sleeved outside the second heat preservation cover 5 and a second power supply for supplying power to the second heating element 6 form a heating mechanism, and the second heating element 6 can generate heat under the condition of electrifying. When the furnace body is an induction heating furnace, the second heating element 6 adopts an induction coil; when the furnace body is a resistance heating furnace, the heating piece II 6 adopts a heating wire.
Referring to fig. 1, the apparatus for assisting melting in this embodiment is installed in a furnace body, and includes an auxiliary heating mechanism and a lifting mechanism, and may further include a heat-insulating cover 2.
The first heat preservation cover 2 is arranged above the crucible 1 and is coaxially arranged with the crucible 1, and the bottom surface of the first heat preservation cover contacts with the open end of the top surface of the crucible 1 for heat preservation.
The auxiliary heating mechanism comprises a heating element I3, a power supply I and a heating cylinder 4.
The heating cylinder 4 is arranged on the inner side of the first heat preservation cover 2 and is coaxially arranged with the crucible 1, the inner diameter of the heating cylinder 4 is determined by the inner diameter of the first heat preservation cover 2 and the diameter of the crystal to be grown, and the inner diameter of the heating cylinder 4 needs to satisfy: the distance between the inner wall of the heating cylinder 4 and the crystal to be grown is not less than 10mm. The height of the heating cylinder 4 is limited by the height of the first heat-insulating cover 2, and in general, the height of the heating cylinder 4 does not exceed the heights of the first heat-insulating cover 2 and the crucible 1. The material of the heating cylinder 4 is generally the same as that of the crucible 1 for crystal growth, and for an induction heating furnace, the heating cylinder 4 is generally iridium, platinum, rhenium or the like; for the resistance heating furnace, the heating cylinder 4 is generally made of tungsten, molybdenum, or the like.
The first heating element 3 is sleeved on the outer surface of the first heat preservation cover 2, the distance between the first heating element 3 and the first heat preservation cover 2 is not more than 10mm, the height of the first heating element 3 is limited by the height of the furnace body and the height of the first heat preservation cover 2, and in general, the height of the first heating element 3 does not exceed the height of the crucible 1. The first heating element 3 is selected according to the furnace body, and when the furnace body is an induction heating furnace, the first heating element 3 adopts an induction coil; when the furnace body is a resistance heating furnace, the first heating element 3 adopts a heating wire. The first power supply is electrically connected with the first heating element 3 and supplies power to the first heating element 3.
The lifting mechanism drives the auxiliary heating mechanism to lift in the furnace body, and when the lifting mechanism drives the auxiliary heating mechanism to descend, the bottom surfaces of the heating piece I3 and the heating cylinder 4 can be contacted with the open end surface of the top end of the crucible 1; when the lifting mechanism drives the auxiliary heating mechanism to lift upwards, the distance between the bottom surfaces of the heating element I3 and the heating cylinder 4 and the top end surface of the crucible 1 is not smaller than 200mm. In this embodiment, the lifting mechanism may adopt an existing ball screw and a guide rail to drag the auxiliary heating mechanism to move up and down.
Example 1
The growth size of the embodiment is the induction Czochralski methodAn operation principle of the device for assisting the melting of the present embodiment will be described by taking an Nd-doped yttrium aluminum garnet (Nd: YAG) crystal of (diameter of the constant diameter portion) ×200mm (length of the constant diameter portion) as an example:
the furnace body is an induction heating furnace, the first heating element 3 and the second heating element 6 are both induction coils, and the heating cylinder 4 is an iridium heating cylinder 4.
Parameters: size of crucible 1: (inner diameter) ×400mm (inner height) ×4mm (thickness); size of iridium heating cylinder 4: /(I) (Inner diameter) ×150mm (height) ×2mm (thickness); the size of the first heat preservation cover 2: /(I)(Inner diameter) ×500mm (inner height) ×140mm (thickness); size of heating element one 3: /(I)(Inner diameter) ×200mm (height) ×12mm (thickness).
Before melting, the bottom surface of the first heat preservation cover 2 is attached to the top surface of the crucible 1, the lifting mechanism drives the auxiliary heating mechanism to descend, so that the bottom surfaces of the heating cylinder 4 and the first heating element 3 are attached to the top surface of the crucible 1, then the power supplies of the first heating element 3 and the second heating element 6 are connected, the first heating element 3 and the second heating element 6 heat to heat up the molten materials, and the power rising rates of the first power supply and the second power supply are controlled to be consistent and are both 2kW/h; when the power of the first power supply and the power of the second power supply are 48kW, the raw materials in the crucible 1 are completely melted; at this time, the lifting mechanism lifts the heating cylinder 4 and the heating element I3 by 250mm at a speed of 10mm/h, and controls the power of the power supply I to gradually drop to 0W at a speed of 2kW/h; after 2 hours, the center of the surface of the melt in the crucible 1 was found to start solidification, and at this time, the power of the second power supply was controlled to gradually rise at a rate of 2kW/h until the solidified raw material was remelted and the melting was completed.
Example 2
The embodiment adopts the resistance pulling method growth size asThe operation principle of the apparatus for assisting the melting of the present embodiment will be described by taking magnesium aluminate spinel (MgAl 2O4) crystal of (diameter of constant diameter portion) ×200mm (length of constant diameter portion) as an example:
the furnace body is a resistance heating furnace, the heating element I3 and the heating element II 6 are both heating wires, and the heating cylinder 4 is a molybdenum heating cylinder 4.
Parameters: size of crucible 1: (inner diameter) ×300mm (inner height) ×4mm (thickness); size of the molybdenum heating cylinder 4: /(I) (Inner diameter) ×150mm (height) ×2mm (thickness); the size of the first heat preservation cover 2: /(I)(Inner diameter) ×400mm (inner height) ×120mm (thickness); size of heating element one 3: /(I)(Inner diameter) ×200mm (height) ×12mm (thickness).
Before melting, the bottom surface of the first heat preservation cover 2 is attached to the top surface of the crucible 1, the lifting mechanism drives the auxiliary heating mechanism to descend, so that the bottom surfaces of the heating cylinder 4 and the first heating element 3 are attached to the top surface of the crucible 1, then the power supplies of the first heating element 3 and the second heating element 6 are connected, the first heating element 3 and the second heating element 6 heat to heat up the molten materials, and the power rising rates of the first power supply and the second power supply are controlled to be consistent and are both 2kW/h; when the power of the first power supply and the power of the second power supply are both 45kW, the raw materials in the crucible 1 are completely melted; at this time, the lifting mechanism lifts the heating cylinder 4 and the heating element I3 by 250mm at a speed of 10mm/h, and controls the power of the power supply I to gradually drop to 0W at a speed of 2kW/h; after 3 hours, the center of the surface of the melt in the crucible 1 was found to start solidification, and at this time, the power of the second power supply was controlled to gradually rise at a rate of 2kW/h until the solidified raw material was remelted and the melting was completed.
It is noted that when an element is referred to as being "mounted to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "secured to" another element, it can be directly secured to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "or/and" as used herein includes any and all combinations of one or more of the associated listed items.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. An apparatus for assisting melting, which is installed in a furnace body for crystal growth by a pulling method, the furnace body being provided with a crucible (1), characterized in that the apparatus comprises:
the auxiliary heating mechanism is arranged above the crucible (1) and can be in end face contact with the open end of the crucible (1); and
And the lifting mechanism is used for driving the auxiliary heating mechanism to lift and lower above the crucible (1).
2. The apparatus of claim 1, wherein the auxiliary heating mechanism comprises:
a heating cylinder (4) which is positioned above the crucible (1) and is arranged coaxially with the crucible (1);
the heating piece I (3) is sleeved outside the heating cylinder (4) and can generate heat under the condition of electrifying; and
And the first power supply is electrically connected with the first heating element (3) and supplies power for the first heating element (3).
3. The apparatus for assisting molten material according to claim 2, wherein the furnace body is a resistance heating furnace, and the first heating member (3) is a heating wire.
4. The apparatus for assisting molten material according to claim 2, wherein the furnace body is an induction heating furnace, and the first heating element (3) is an induction coil.
5. The apparatus of auxiliary frit material according to claim 2, wherein the apparatus of auxiliary frit material further comprises:
the first heat preservation cover (2) is arranged between the first heating element (3) and the heating cylinder (4) and is coaxially arranged with the crucible (1), the inner diameter of the first heat preservation cover (2) is smaller than that of the crucible (1), and the bottom surface of the first heat preservation cover is attached to the top surface of the crucible (1).
6. The apparatus for assisting molten material according to claim 5, wherein a distance between the first heat generating member (3) and the first heat retaining cover (2) is not more than 10mm, and a height of the first heat generating member (3) is not more than a height of the crucible (1) and the first heat retaining cover (2);
And/or the material of the heating cylinder (4) is the same as that of the crucible (1), the height of the heating cylinder is not more than that of the crucible (1) and the heat preservation cover I (2), and the inner diameter of the heating cylinder (4) meets the following conditions: the distance between the inner wall of the heating cylinder (4) and the crystal to be grown is not less than 10mm.
7. The apparatus of claim 1, wherein the lifting mechanism drives the auxiliary heating mechanism to rise a distance of not less than 200mm.
8. A method of assisting a device for assisting a melting according to any one of claims 1-7, wherein the crucible (1) is provided with a source material from which crystals are grown, and wherein the crucible (1) is provided with a heating means at the outside, characterized in that it comprises the steps of:
S1, the lifting mechanism drives the auxiliary heating mechanism to descend to be in contact with the opening end face of the crucible (1); starting the heating mechanism and the auxiliary heating mechanism to heat the crucible (1), and controlling the heating mechanism and the auxiliary heating mechanism to have consistent heating rate;
s2, after the raw materials in the crucible (1) are completely melted, the lifting mechanism drives the auxiliary heating mechanism to ascend and the auxiliary heating mechanism stops heating;
S3, heating temperature of the heating mechanism is increased, and raw materials in the crucible (1) are prevented from being re-solidified.
9. The method of auxiliary melting according to claim 8, wherein in the step S2, the elevating mechanism drives the auxiliary heating mechanism to ascend by a distance of not less than 200mm.
10. The method of assisting in melting according to claim 8, wherein the heating mechanism comprises:
the second heat preservation cover (5) is sleeved outside the crucible (1);
The heating part II (6) is sleeved on the outer surface of the heat preservation cover II (5); and
And the second power supply is electrically connected with the second heating element (6) and supplies power for the second heating element (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410154648.8A CN118087024A (en) | 2024-02-02 | 2024-02-02 | Device and method for assisting melting |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410154648.8A CN118087024A (en) | 2024-02-02 | 2024-02-02 | Device and method for assisting melting |
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| Publication Number | Publication Date |
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| CN118087024A true CN118087024A (en) | 2024-05-28 |
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| CN202410154648.8A Pending CN118087024A (en) | 2024-02-02 | 2024-02-02 | Device and method for assisting melting |
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| Country | Link |
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| CN (1) | CN118087024A (en) |
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