CN118068626A - Reconfigurable mode switch based on lithium niobate thin film - Google Patents
Reconfigurable mode switch based on lithium niobate thin film Download PDFInfo
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- CN118068626A CN118068626A CN202410381296.XA CN202410381296A CN118068626A CN 118068626 A CN118068626 A CN 118068626A CN 202410381296 A CN202410381296 A CN 202410381296A CN 118068626 A CN118068626 A CN 118068626A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 230000008878 coupling Effects 0.000 claims abstract description 33
- 238000010168 coupling process Methods 0.000 claims abstract description 33
- 238000005859 coupling reaction Methods 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000010410 layer Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a structural design of a reconfigurable mode switch based on a lithium niobate thin film, and belongs to the fields of optical waveguide switches and mode division multiplexing. The invention is based on the electro-optical effect of lithium niobate crystals. The main structure of the invention is two symmetrical directional coupling units DC1 and DC2, when the electrode does not work, E 21 mode is coupled in DC1 and enters adjacent waveguide, E 31 mode is coupled in DC2 and enters adjacent waveguide. Coupling of the E 21 mode at DC1 is almost completely suppressed when the operating voltage in DC1 is 25.8V, and coupling of the E 31 mode at DC2 is completely suppressed when the operating voltage in DC2 is 16.9V, thereby enabling reconfigurable differential multiplexing of waveguide modes, providing a choice for a reconfigurable mode multiplexing network.
Description
Technical Field
The invention relates to the field of optical waveguide switches and mode division multiplexing, in particular to a reconfigurable mode switch based on a lithium niobate thin film.
Background
The optical interconnection technology is a new scheme for solving the problem of short-distance interconnection due to the characteristics of large bandwidth, low time delay, high integration level, low power consumption, high transmission speed and the like. The mode division multiplexing technology introduces a space orthogonal mode as a new degree of freedom, can greatly improve the transmission capacity of an optical communication system, and solves the requirement of people on the transmission capacity of a larger optical interconnection system. The mode switch is a key device of the mode division multiplexing system, and can realize flexible switching of different modes of light in an optical path.
The mode switch can be divided into a Y branch switch, an asymmetric coupler switch, an MZI switch, a periodic grating switch and the like according to the structure. The working principle of the switch can be divided into waveguide type switches such as an electro-optical effect and a thermo-optical effect, and compared with an electro-optical switch, the thermo-optical switch has slow response time and the possibility of unstable temperature. Materials for manufacturing the waveguide optical switch include lithium niobate, silicon-based silicon dioxide, glass, organic polymer and the like. The lithium niobate crystal is used as an optical material with excellent electro-optic effect, has good physical and chemical stability, wide optical low-loss window, larger electro-optic coefficient and excellent second-order nonlinear effect, and the switching speed of an active waveguide switch manufactured by the lithium niobate crystal can reach nanosecond level. The reconfigurable mode switch based on the lithium niobate thin film is beneficial to constructing a more rapid and flexible mode division multiplexing system.
Disclosure of Invention
The invention aims to solve the problem of providing a reconfigurable mode switch based on a lithium niobate thin film, which realizes the reconfigurable differential multiplexing of a waveguide mode in a mode division multiplexing system.
The technical scheme of the invention is as follows:
The reconfigurable mode switch based on the lithium niobate thin film comprises two symmetrical directional coupling units DC1 and DC2, wherein each symmetrical directional coupling unit comprises two parallel ridge waveguides with equal width, and electrodes with the same length as the waveguides are arranged in the middle and at the two sides of each ridge waveguide; the two symmetrical directional symmetrical coupling units are connected by using uniformly-changed conical waveguides; the symmetrical directional coupling unit is connected with an input/output port by using an S-shaped bent waveguide and a ridge-shaped straight waveguide; the reconfigurable mode switch based on the lithium niobate thin film comprises a substrate, a silicon dioxide layer is arranged on the substrate, a lithium niobate thin film layer is arranged on the silicon dioxide layer, a ridge waveguide is arranged on the lithium niobate thin film layer, protective layers are arranged on the ridge waveguide and the lithium niobate thin film layer, and an electrode is arranged on the protective layers.
Further, the substrate is a lithium niobate substrate, and the protective layer is silicon dioxide.
Further, the thickness of the lithium niobate substrate is 10 μm, the thickness of the silicon dioxide layer is 10 μm, the thickness of the lithium niobate thin film layer is 450nm, the height of the ridge waveguide is 250nm, and the thickness of the protective layer is 100nm.
Further, in the symmetric directional coupling unit DC1, the ridge waveguide has a width of 2.3 μm, the ridge waveguide has a pitch of 3 μm, the intermediate electrode has a width of 2 μm, the two side electrodes have a width of 5 μm, the intermediate electrode has a pitch of 3.25 μm with the two side electrodes, the symmetric directional coupling unit DC2 has a ridge waveguide has a width of 3.5 μm, the ridge waveguide has a pitch of 4 μm, the intermediate electrode has a width of 3.2 μm, the two side electrodes have a width of 15 μm, and the intermediate electrode has a pitch of 4.5 μm with the two side electrodes.
The beneficial effects are that: in the invention, the quick and flexible switching effect of the waveguide mode can be realized by utilizing the electro-optical effect of the lithium niobate crystal. In addition, compared with the traditional lithium niobate waveguide device adopting an annealing proton method, the waveguide device based on the lithium niobate thin film has smaller volume and is more beneficial to the integration of the waveguide device.
Drawings
Fig. 1 is a schematic structural diagram of a reconfigurable mode switch based on a lithium niobate thin film according to the present invention.
Fig. 2 is a schematic structural diagram of a symmetrical directional coupling unit DC1 of the reconfigurable mode switch based on a lithium niobate thin film of the present invention.
Fig. 3 is a schematic structural diagram of a symmetrical directional coupling unit DC2 of the reconfigurable mode switch based on a lithium niobate thin film of the present invention.
Fig. 4 (a) is a transmission simulation diagram of the electrode of the lithium niobate thin film-based reconfigurable mode switch of the present invention in an inactive state, and (b) is a transmission simulation diagram of the electrode of the lithium niobate thin film-based reconfigurable mode switch of the present invention in an active state.
Detailed description of the preferred embodiments
The invention discloses a reconfigurable mode switch based on a lithium niobate thin film, and the reconfigurable mode switch based on the lithium niobate thin film is further described below with reference to the embodiment of the drawings.
As shown in fig. 1, the mode switch based on the lithium niobate thin film is reconfigurable and comprises a substrate 4, wherein a silicon dioxide layer 3 is arranged on the substrate 4, a lithium niobate thin film layer 2 is arranged on the silicon dioxide layer 3, a lithium niobate ridge waveguide is arranged on the lithium niobate thin film layer 2, a protective layer 1 is arranged on the lithium niobate thin film layer 2 and the lithium niobate waveguide, and a metal electrode is arranged on the protective layer 1. The thickness of the substrate 4 is h 4, the thickness of the silicon dioxide layer is h 3, the thickness of the lithium niobate thin film layer is h 2, and the thickness of the protective layer 1 is h 1. The lithium niobate thin film based reconfigurable mode switch comprises two symmetrical directional coupling units DC1 and DC2. The symmetrical directional coupling unit DC1 comprises two ridge-shaped straight waveguides 601 and 602 having equal widths and heights, and metal electrodes 501, 502 and 503 are disposed in the middle and on both sides of the symmetrical ridge-shaped straight waveguides. The symmetrical directional coupling unit DC2 comprises two ridge-shaped straight waveguides 801 and 802 having equal widths and heights, and metal electrodes 701, 702 and 703 are disposed in the middle and on both sides of the symmetrical ridge-shaped straight waveguides. One end of a ridge straight waveguide 601 in the symmetrical directional coupling unit DC1 is connected to the input Port1 through a ridge S-bend waveguide 9, the other end of the ridge straight waveguide 601 is connected to the output Port4 through a ridge S-bend waveguide 13 and a ridge straight waveguide 15, one end of the ridge straight waveguide 602 is connected to the input Port2 through a tapered waveguide 11 and a ridge straight waveguide 10, and the other end of the ridge straight waveguide 602 is connected to one end of a ridge straight waveguide 801 in the symmetrical directional coupling unit DC2 through a tapered waveguide 14. One end of a ridge waveguide 801 in the symmetrical directional coupling unit DC2 is connected with a ridge straight waveguide 602 in the symmetrical directional coupling unit DC1 through a tapered waveguide 14, the other end of the ridge waveguide 801 is connected with an output Port5 through a ridge straight waveguide 16, one end of a ridge straight waveguide 802 is connected with an input Port3 through a ridge S-bend waveguide 12, and the other end of the ridge straight waveguide 802 is connected with an output Port6 through an S-bend waveguide 17. The heights of all the ridge straight waveguides, the conical waveguides, the ridge S-shaped bent waveguides and the electrodes are the same. The input Port1 supports E 11 and E 21 mode inputs, the input Port2 supports E 11 mode inputs, the input Port3 supports E 11、E21 and E 31 mode inputs, the output Port4 supports E 11 and E 21 mode outputs, the output Port5 supports E 11、E21 and E 31 mode outputs, and the output Port6 supports E 11、E21 and E 31 mode outputs. The z-direction difference value of the input/output port of the ridge S-shaped bent waveguide 9 is R 1, the y-direction difference value is L 1, and the width and the height are the same as those of the ridge straight waveguide 601; the z-direction difference value of the input/output port of the ridge S-shaped curved waveguide 12 is R 2, the y-direction difference value is L 4, and the width is the same as that of the ridge straight waveguide 802; the z-direction difference value of the input/output port of the ridge S-shaped curved waveguide 13 is R 3, the y-direction difference value is L 5, and the width and the height are the same as those of the ridge straight waveguide 601; the z-direction difference of the input/output port of the ridge S-bend waveguide 17 is R 4, the y-direction difference is L 9, and the width and height are the same as those of the ridge straight waveguide 802. The length of the ridge straight waveguide 10 is L 2, and the width is W 3; the length of the tapered waveguide 11 is L 3, the width of the input end is equal to the width of the ridge straight waveguide 10, and the width of the output end is equal to the width of the ridge straight waveguide 602; the length of the tapered waveguide 14 is L 6, the width of the input end is equal to the width of the ridge straight waveguide 602, and the width of the output end is equal to the width of the ridge straight waveguide 801; the length of the ridge straight waveguide 15 is L 7; the ridge straight waveguide 16 has a length L 8.
As shown in fig. 2, the symmetrical coupling unit DC1 is a schematic structural diagram, the symmetrical coupling area DC1 includes an electrode group 5, the height, width and length of electrodes 501 and 503 in the electrode group 5 are the same, the length of electrode 502 is the same as that of electrodes 501 and 503, the distance between electrode 501 and electrode 502 is equal to that between electrode 502 and electrode 503, the width, height, side wall angle and length of ridge straight waveguides 601 and 602 in the symmetrical ridge straight waveguide 6 are the same, and the length and height of the electrode group 5 and the symmetrical ridge straight waveguide 6 are the same. The length of the electrode group 5 is Lc 1, the width of the electrode 501 is T 2, the width of the electrode 502 is T 1, the height of the electrode 501 is h 0, the side wall angle of the symmetric ridge straight waveguide 6 is θ, the distance between the ridge straight waveguide 601 and the ridge straight waveguide 602 is Gc 1, and the distance between the electrodes 501 and 502 is Ge 1.
As shown in fig. 3, the symmetrical coupling unit DC2 includes an electrode group 7, a symmetrical ridge-shaped straight waveguide 8, in which the height, width and length of the electrodes 701 and 703 in the electrode group 7 are the same, the length of the electrode 702 is the same as the electrodes 701 and 703, the distance between the electrode 701 and the electrode 702 is equal to the distance between the electrode 702 and the electrode 703, in the symmetrical ridge-shaped straight waveguide 8, the width, height, side wall angle and length of the ridge-shaped straight waveguides 801 and 802 are the same, and the length and height of the electrode group 7 and the symmetrical ridge-shaped straight waveguide 8 are the same. The length of the electrode group 7 is Lc 2, the width of the electrode 701 is T 4, the width of the electrode 702 is T 3, the height of the electrode 701 is h 0, the sidewall angle of the symmetric ridge straight waveguide 8 is θ, the distance between the ridge straight waveguide 801 and the ridge straight waveguide 802 is Gc 2, and the distance between the electrodes 701 and 702 is Ge 2.
In this embodiment, the material of the substrate 4 is lithium niobate, the thickness h 4 of the substrate is 10 μm, the thickness h 3 of the silicon dioxide layer 3 on the substrate 4 is 10 μm, the thickness h 2 of the lithium niobate thin film layer 2 on the silicon dioxide layer is 450nm, the material of the protective layer 1 is silicon dioxide, the thickness h 1 is 100nm, the height h 0 of the ridge straight waveguide 6 is 250nm, the z-direction difference R 1 of the input/output port of the ridge S-bend waveguide 9 is 4 μm, the difference L 1 in the y direction is 500 μm, the width is equal to the width W 1 of the ridge straight waveguide 601, the difference R 2 in the z direction of the input/output port of the S-bend waveguide 12 is 16.8 μm, the difference L 4 in the y direction is 2430 μm, the width is equal to the width W 2 of the ridge straight waveguide 802, the difference R 3 in the z direction of the input/output port of the ridge S-bend waveguide 13 is 14 μm, the difference L 5 in the y direction is 700 μm, the width is equal to the width W 1 of the ridge straight waveguide 601, the z-direction difference R 4 of the input/output port of the ridge S-curved waveguide 17 is 3 μm, the y-direction difference L 9 is 500 μm, the width is equal to the width W 2 of the ridge straight waveguide 802, the length L 2 of the ridge straight waveguide 10 is 400 μm, the width W 3 is 1.5 μm, the length L 3 of the tapered waveguide 11 is 200 μm, the input end width is equal to the width W 3 of the ridge straight waveguide 10, the output end width is equal to the width W 1 of the ridge straight waveguide 602, the tapered waveguide 14 has a length L 6 of 700 μm, an input end width equal to the width W 1 of the ridge straight waveguide 602, an output end width equal to the width W 2 of the ridge straight waveguide 801, a length L 7 of the ridge straight waveguide 15 of 3189 μm, a width equal to the width W 1 of the ridge straight waveguide 601, a length L 7 of the ridge straight waveguide 16 of 500 μm, a width equal to the width W 2 of the ridge straight waveguide 801, a width W 1 of the symmetrical ridge straight waveguides 601 and 602 of 2.3 μm, the pitch Gc 1 is 3 μm, the length Lc 1 is 1397 μm, the width T 1 of the electrodes 502 is 2 μm, the width T 2 of the electrodes 501 and 503 is 5 μm, the pitch Ge 1 between the electrodes 502 and 501 is equal to the pitch between the electrodes 502 and 503 is 3.25 μm, the width W 2 of the symmetrical ridge straight waveguides 801 and 802 is 3.5 μm, the pitch Gc 2 is 4 μm, the length Lc 2 is 2719 μm, the width T 3 of the electrode 702 is 3.2 μm, the width T 4 of the electrodes 701 and 703 is 15 μm, the spacing Ge 2 between the electrodes 702 and 701 is equal to the spacing between the electrodes 702 and 703 is 4.5 μm, the height h 0 of all waveguides and electrodes is 250nm, and the waveguide sidewall angle θ is 19 °.
As shown in fig. 4 (a), electrode group 5 and electrode group 7 are not energized, when E 11 and E 21 modes are simultaneously input from Port1, E 21 mode in the left optical path is coupled at symmetric directional coupling unit DC1, finally E 11 mode input from Port1 is output from Port4, E 21 mode input from Port1 is output from Port5, when E 11、E21 and E 31 modes are simultaneously input from Port3, E 31 mode in the right optical path is coupled at symmetric directional coupling unit DC2, eventually, E 11 and E 21 modes input from Port3 are output from Port6, and E 31 modes input from Port3 are output from Port 5. As shown in fig. 4 (b), the voltage of electrode 502 is 25.8V, electrodes 501 and 503 are grounded, the voltage of electrode 702 is 16.9V, electrodes 701 and 703 are grounded, when E 11 and E 21 modes are simultaneously input from Port1, the coupling of E 21 mode in the left optical path at symmetrical directional coupling unit DC1 is suppressed, finally both E 11 and E 21 modes input from Port1 are output from Port4, when E 11、E21 and E 31 modes are simultaneously input from Port3, the coupling of the E 31 mode in the right optical path at the symmetrical directional coupling unit DC2 is suppressed, and finally both the E 11、E21 and E 31 modes input from Port3 are output from Port 6.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present invention should be covered by the scope of the present invention.
Claims (4)
1. The reconfigurable mode switch based on the lithium niobate thin film comprises two symmetrical directional coupling units DC1 and DC2, wherein each symmetrical directional coupling unit comprises two parallel ridge-shaped straight waveguides with equal width, and electrodes with the same length as the waveguides are arranged in the middle and at the two sides of the ridge-shaped waveguides; the two symmetrical directional coupling units are connected by using uniformly-changed conical waveguides; the symmetrical directional coupling unit is connected with an input/output port by using a ridge S-shaped bent waveguide and a ridge straight waveguide; the reconfigurable mode switch based on the lithium niobate thin film comprises a substrate, a silicon dioxide layer is arranged on the substrate, a lithium niobate thin film layer is arranged on the silicon dioxide layer, a ridge waveguide is arranged on the lithium niobate thin film layer, protective layers are arranged on the ridge waveguide and the lithium niobate thin film layer, and an electrode is arranged on the protective layers.
2. The lithium niobate thin film-based reconfigurable mode switch of claim 1, wherein the substrate is a lithium niobate substrate and the protective layer is silicon dioxide.
3. The lithium niobate thin film based reconfigurable mode switch of claim 1, wherein the thickness of the lithium niobate substrate is 10 μm, the thickness of the silicon dioxide layer is 10 μm, the thickness of the lithium niobate thin film layer is 450nm, the height of the ridge waveguide is 250nm, and the thickness of the protective layer is 100nm.
4. The lithium niobate thin film-based reconfigurable mode switch according to claim 1, wherein in the symmetrical coupling unit DC1, the width of the ridge waveguide is 2.3 μm, the pitch of the ridge waveguide is 3 μm, the width of the intermediate electrode is 2 μm, the width of the both side electrodes is 5 μm, the pitch of the intermediate electrode and the both side electrodes is 3.25 μm, and in the symmetrical coupling unit DC2, the width of the ridge waveguide is 3.5 μm, the pitch of the ridge waveguide is 4 μm, the width of the intermediate electrode is 3.2 μm, the width of the both side electrodes is 15 μm, and the pitch of the intermediate electrode and the both side electrodes is 4.5 μm.
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| CN202410381296.XA CN118068626A (en) | 2024-03-29 | 2024-03-29 | Reconfigurable mode switch based on lithium niobate thin film |
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| CN202410381296.XA CN118068626A (en) | 2024-03-29 | 2024-03-29 | Reconfigurable mode switch based on lithium niobate thin film |
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| CN118068626A true CN118068626A (en) | 2024-05-24 |
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