CN118068484A - Multimode interference coupler and preparation method thereof - Google Patents
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- CN118068484A CN118068484A CN202410322258.7A CN202410322258A CN118068484A CN 118068484 A CN118068484 A CN 118068484A CN 202410322258 A CN202410322258 A CN 202410322258A CN 118068484 A CN118068484 A CN 118068484A
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- 239000010409 thin film Substances 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 28
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 13
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- 238000000034 method Methods 0.000 description 9
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- 229920002120 photoresistant polymer Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
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- 238000009826 distribution Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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Abstract
The application provides a multimode interference coupler and a preparation method thereof, wherein the multimode interference coupler comprises a high refractive index thin film structure and a low refractive index structure, and the high refractive index thin film structure is used for transmitting an optical field; the low refractive index structure is arranged on the surface of the high refractive index film structure and used for limiting the light field to the high refractive index film structure. The technical scheme of the application can provide the multimode interference coupler with wide frequency response.
Description
Technical Field
The invention relates to the technical field of couplers and beam splitters, in particular to a multimode interference coupler and a preparation method thereof, which are important on-chip integrated optical components.
Background
At present, a traditional silicon-based optoelectronic device such as a multimode interference coupler needs to realize a light control mechanism of total internal reflection by constructing a high relative refractive index difference mode, so that complex process treatment is needed to be carried out on a high refractive index dielectric film in the multimode interference coupler, so that a TM fundamental mode light field can be effectively localized in the high refractive index dielectric film. However, this optical mode of control results in a large waveguide dispersion effect, making it difficult for the multimode interference coupler to achieve a wide spectral response.
Disclosure of Invention
The invention mainly aims to provide a multimode interference coupler and a preparation method thereof, and aims to provide a multimode interference coupler with wide frequency response.
In order to achieve the above object, the present invention provides a multimode interference coupler, comprising:
a high refractive index thin film structure for transmitting the optical field; and
And the low-refractive-index structure is arranged on the surface of the high-refractive-index film structure and is used for limiting the light field to the high-refractive-index film structure.
Optionally, the low refractive index structure includes an input section, an optical coherence section, and an output section, where the input section, the optical coherence section, and the output section are sequentially connected along a light field transmission direction of the high refractive index thin film structure.
Optionally, the optical coherence segment is arranged equally wide in a direction from the input segment to the output segment.
Optionally, the input section includes a first wedge-shaped structure, a width of which is set to be gradually wider in a direction from the input section to the output section.
Optionally, the output section comprises a second wedge-shaped structure, the width of which tapers in the direction from the input section to the output section.
Optionally, the second wedge-shaped structures are provided with a plurality of second wedge-shaped structures, and the plurality of second wedge-shaped structures are arranged at one end of the optical coherence section at intervals.
Optionally, the multimode interference coupler further comprises a substrate comprising:
A base layer; and
The buried bottom dielectric layer is arranged above the substrate layer, and one side of the buried bottom dielectric layer, which is away from the substrate layer, is provided with the high refractive index film structure.
The invention also provides a preparation method of the multimode interference coupler, which comprises the following steps:
providing a substrate with a high refractive index thin film structure;
And preparing a low-refractive-index structure on one side of the high-refractive-index thin film structure, which faces away from the substrate.
Optionally, the step of preparing a low refractive index structure on a side of the high refractive index thin film structure facing away from the substrate comprises:
preparing a low refractive index structural layer on one side of the high refractive index thin film structure away from the substrate;
and patterning the low-refractive-index structural layer to obtain the low-refractive-index structure.
According to the technical scheme, the multimode interference coupler comprises a high-refractive-index film structure and a low-refractive-index structure which are arranged in a stacked mode, and through the structure, the light control function can be realized by utilizing a physical mechanism of a bound state in a continuous region, so that an optical field is limited in the high-refractive-index film structure. The integrated waveguide of the light control mechanism has low dispersion effect, and can effectively inhibit the dependence of response wavelength on the size of a device, so that the working spectrum bandwidth of the multimode interference coupler can be expanded, and the beneficial effect of large response wavelength range is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a multimode interference coupler according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a low refractive index structure of the multimode interference coupler of FIG. 1;
FIG. 3 is a transmission spectrum of the multimode interference coupler of FIG. 1;
FIG. 4 is a graph of the width w g of the low-index structure of the multimode interference coupler of FIG. 1 versus transmission loss;
FIG. 5 is a plot of width w of a low refractive index structure of the multimode interference coupler of FIG. 1 versus device loss;
FIG. 6 is a plot of top-down cross-sectional electric field profiles for the multimode interference coupler of FIG. 1 at different response wavelengths.
Reference numerals illustrate:
| Reference numerals | Name of the name | Reference numerals | Name of the name |
| 100 | Multimode interference coupler | 20 | High refractive index thin film structure |
| 10 | Low refractive index structure | 30 | Substrate and method for manufacturing the same |
| 11 | Input section | 31 | Buried bottom dielectric layer |
| 12 | Optical coherence segment | 32 | Substrate layer |
| 13 | Output section |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
In the present invention, unless specifically stated and limited otherwise, the terms "connected," "affixed," and the like are to be construed broadly, and for example, "affixed" may be a fixed connection, a removable connection, or an integral body; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
In the related art, a conventional silicon-based optoelectronic device, such as the multimode interference coupler 100, needs to implement a light control mechanism of total internal reflection by constructing a high relative refractive index difference, so that a complex process treatment is required for the high refractive index dielectric film in the multimode interference coupler 100, so that the TM fundamental mode optical field can be effectively localized in the high refractive index dielectric film. But this mode of light management results in a large waveguide dispersion effect, making it difficult for the multimode interference coupler 100 to achieve a wide spectral response.
To this end, the present invention proposes a multimode interference coupler 100.
Referring to fig. 1 and 2, in some embodiments of the inventive multimode interference coupler 100, the multimode interference coupler 100 comprises:
a high refractive index thin film structure 20 for transmitting an optical field; and
A low refractive index structure 10, wherein the low refractive index structure 10 is disposed on the surface of the high refractive index thin film structure 20, and is used for limiting the optical field to the high refractive index thin film structure 20.
According to the technical scheme, the multimode interference coupler 100 comprises a high refractive index film structure 20 and a low refractive index structure 10 which are sequentially stacked from top to bottom, wherein the high refractive index film structure 20 can be but is not limited to a waveguide structure formed by high refractive index materials such as lithium niobate and the like, is used for transmitting an optical field and can realize functions such as beam splitting and the like; the low refractive index structure 10 is disposed on one side surface of the high refractive index thin film structure 20, and is prepared by patterning the low refractive index structure 10, so that a physical mechanism of a bound state in a continuous region can realize a light field local effect in the high refractive index thin film structure 20.
The low refractive index structure 10 may be, but not limited to, a dielectric material such as silicon dioxide, silicon nitride, or aluminum oxide. In a possible embodiment, the low refractive index structure 10 may also be configured as a photoresist, so that patterning of the low refractive index structure 10 may be completed by simply exposing the low refractive index structure layer formed by the photoresist.
It should be noted that, compared with the traditional silicon-based optoelectronic device, the technical scheme of the invention can realize the light control function through the physical mechanism of the bound state in the continuous region by forming the total internal reflection by using the mode of high refractive index difference to control the light of the local light field. Because the integrated waveguide structure designed based on the constraint state mechanism in the continuous region has the effect of low dispersion effect, the technical scheme of the invention can effectively inhibit the dependence of the response wavelength on the size of the device, thereby being beneficial to expanding the working spectrum bandwidth of the multimode interference coupler 100 and further being beneficial to realizing the effect of full coverage of the communication wave band of the response wavelength.
In addition, since the device of the conventional design needs to obtain an effective local area of the optical field by patterning the high refractive index thin film structure 20 through an etching process, the etching process brings additional loss to the device, and rough edges are formed on the side surface of the waveguide formed by the high refractive index thin film structure 20, which causes asymmetric output of the symmetric device. In contrast, in the technical scheme of the invention, in the patterning process, only the low refractive index structure 10 needs to be patterned and prepared, so that the optical field is limited to the high refractive index thin film structure 20 below the low refractive index structure 10, thereby avoiding the rough side wall formed on the side surface of the high refractive index thin film structure 20 due to the etching process in the device preparation process, avoiding the scattering loss caused by the rough side wall, reducing the risk of extra scattering loss and asymmetry of the symmetrical structure due to engineering preparation, and being beneficial to optimizing the service performance of the high refractive index thin film structure 20.
Therefore, it can be understood that, in the technical solution of the present invention, by stacking the high refractive index thin film structure 20 and the low refractive index structure 10, the light control function can be implemented by using the physical mechanism of the confinement state in the continuous region, so that the light field is limited to the high refractive index thin film structure 20. In addition, the waveguide loss of the multimode interference coupler 100 under the control of the optical machine has robustness of hundreds of nanometers on the size, and has good preparation stability. Further, the technical scheme of the invention has the beneficial effect of low dispersion effect, so that the dependence of the multimode interference coupler 100 on wavelength is low, the response wavelength range is large, and the use performance is good.
Referring to fig. 2, in some embodiments of the multimode interference coupler 100 of the invention, the low refractive index structure 10 includes an input section 11, an optical coherence section 12 and an output section 13, and the input section 11, the optical coherence section 12 and the output section 13 are sequentially connected along the optical field transmission direction of the high refractive index thin film structure 20.
In this embodiment, the high refractive index thin film structure 20 includes a coupling-in end and a coupling-out end, and the optical field is sequentially transmitted along the direction from the coupling-in end to the coupling-out end; correspondingly, the input section 11, the optical coherence section 12 and the output section 13 are sequentially connected between the coupling-in end and the coupling-out end along the optical field transmission direction of the high refractive index thin film structure 20. In this manner, the optical field may be confined within the high refractive index thin film structure 20 as it is transmitted within the multimode interference coupler 100.
Referring to fig. 2, in some embodiments of the multimode interference coupler 100, the input section 11 includes a first wedge structure, and the width of the first wedge structure is gradually wider in the direction from the input section 11 to the output section 13;
and/or the output section 13 comprises a second wedge-shaped structure, the width of which tapers in the direction of the input section 11 to the output section 13.
In this embodiment, by setting the input section 11 and the output section 13 of the low refractive index structure 10 to be the first wedge structure and the second wedge structure respectively, the input section 11 and the output end are both formed with linear wedge structures, so that a good match can be ensured between the mode of the input waveguide and the mode of the output waveguide and the interference region at the optical coherence section 12 through the linear wedge structures, thereby being beneficial to reducing loss.
In some embodiments, referring to fig. 4 and fig. 5, the input section 11 is capable of supporting a single mode TM mode when the width wg of the end of the first wedge-shaped structure facing away from the optical coherence section 12 is 2.04 μm. When the width w of the first wedge-shaped structure towards one end of the optical coherence section 12 is set width by width, it is possible to have a lower transmission loss. Thus, the input section 11 can be made to support an input light source of a single mode TM mode, and an effect of low transmission loss can be achieved. Of course, the technical solution of the present invention is not limited thereto, and the minimum width of the first wedge-shaped structure may be set correspondingly according to different modes of the input light source, which is not limited herein.
Referring to fig. 2, in some embodiments of the multimode interference coupler 100, a plurality of second wedge structures are provided, and the plurality of second wedge structures are disposed at an end of the optical coherence section 12 at intervals.
It is understood that the multimode interference coupler 100 may be a plurality of types such as a1×n multimode interference coupler 100, a2×n multimode interference coupler 100, and an n×n multimode interference coupler 100. The number of the second wedge structures may be specifically set corresponding to the number of the output waveguides, and when the output waveguides are provided with a plurality of output waveguides, the second wedge structures are also provided with a plurality of output waveguides, and the plurality of second wedge structures are equidistantly arranged at one end of the optical coherence section 12 with a length of a spacing g, which is not limited herein.
Similarly, the number of the first wedge structures may be specifically set corresponding to the number of the input waveguides, and when the input waveguides are provided with a plurality of the first wedge structures, each of the first wedge structures is provided corresponding to one of the input waveguides, and the plurality of first wedge structures are equidistantly arranged at one end of the optical coherence section 12 with a length of the interval g, which is not limited herein.
Specifically, taking the multimode interference coupler 100 as an example, the multimode interference coupler 100 is 1×2, the input section 11 of the low refractive index structure 10 is provided with a first wedge structure, and the output end includes two second wedge structures spaced apart by a length of the interval g. In this embodiment, the optical coherence segment 12 needs to support the formation and transmission of higher order TM modes with lower transmission losses. Wherein the width a of the optical coherence segment 12 can be set to 7.28 μm and the length L can be calculated to 33.6 μm by scanning the beat length. Of course, the technical solution of the present invention is not limited thereto, and the structural dimension of the optical coherence section 12 may be set according to different types of the multimode interference coupler 100, which is not limited herein.
Further, referring to fig. 3, fig. 3 is a transmission spectrum of the multimode interference coupler 100 of the present embodiment. From the figure, the response wavelength of the device can be from 1260nm to 1675nm, and the full coverage of the whole communication wave band from O to U can be realized. And the transmission efficiency of the whole device is more than 48.7%, and the additional loss of the whole wave band is lower than 0.01dB. That is, the multimode interference coupler 100 of the present embodiment achieves the advantageous effects of a large response wavelength range and low band loss.
Referring to fig. 6, fig. 6 is an electric field distribution diagram of a top view cross section corresponding to different wavelengths of the multimode interference coupler 100 according to the present embodiment. As can be seen from the figure, in the 1×2 multimode interference coupler 100 of the present embodiment, the light beam can be equally and uniformly distributed to two symmetrical output ports. Through simulation calculation and data processing analysis, the multimode interference coupler 100 of the technical scheme of the invention can be further verified to have the characteristics of wide frequency response, high-purity mode field distribution and low insertion loss.
Referring to fig. 1, in some embodiments of the inventive multimode interference coupler 100, the multimode interference coupler 100 further comprises a substrate 30, the substrate 30 comprising:
a base layer 32; and
The buried bottom dielectric layer 31, the buried bottom dielectric layer 31 is disposed on the base layer 32, and the high refractive index thin film structure 20 is disposed on a side of the buried bottom dielectric layer 31 facing away from the base layer 32.
In this embodiment, the multimode interference coupler 100 is composed of a substrate 30, a high refractive index thin film structure 20, and a low refractive index structure 10, which are disposed in this order from bottom to top. Wherein the substrate 30 comprises a base layer 32 and a buried dielectric layer 31. In some embodiments, the substrate layer 32 may be made of silicon, the buried dielectric layer 31 is made of silicon dioxide, the high refractive index thin film structure 20 is made of lithium niobate, and the low refractive index structure 10 is made of photoresist. Wherein the thickness of the buried dielectric layer 31 may be, but is not limited to, set to 3 μm; the thickness of the high refractive index thin film structure 20 may be, but is not limited to, set to 400nm; the thickness of the low refractive index structure 10 may be set to 600nm, but is not limited thereto, in order to achieve photoresist film formation uniformity.
Further, referring to fig. 5, a graph B is shown that shows a cross-sectional waveguide mode optical field intensity profile perpendicular to the propagation direction. As can be seen from the figure, when the thickness of the photoresist straight waveguide is 600nm, the mode field can be completely bound in the high refractive index thin film structure 20 formed by the lithium niobate thin film, and the lateral radiation of the high refractive index thin film structure 20 in the transmission process is minimum, so that the lowest transmission loss can be obtained. Of course, the embodiments of the present invention are not limited thereto, and the dimension and thickness of the multimode interference coupler 100 can be set according to the actual requirements, and are not limited thereto.
In addition, the invention also provides a preparation method of the multimode interference coupler 100, which comprises the following steps:
Providing a substrate 30 having a high refractive index thin film structure 20;
A low refractive index structure 10 is prepared on the side of the high refractive index thin film structure 20 facing away from the substrate 30.
The substrate 30 with the high refractive index thin film structure 20 is prepared by a conventional method in the prior art, and specifically includes the high refractive index thin film structure 20, a base layer 32 and a buried bottom dielectric layer 31 sequentially arranged from bottom to top. The low refractive index structure 10 is disposed on a side of the high refractive index thin film structure 20 facing away from the substrate 30 to enable the optical field to be confined within the high refractive index thin film structure 20 by a physical mechanism of confinement states in the continuum.
Further, the step of preparing the low refractive index structure 10 on the side of the high refractive index thin film structure 20 facing away from the substrate 30 includes:
Preparing a low refractive index structural layer on a side of the high refractive index thin film structure 20 facing away from the substrate 30;
The low refractive index structure layer is patterned to obtain the low refractive index structure 10.
Wherein, when the low refractive index structural layer is provided as photoresist, the low refractive index structural layer can be prepared by suspending photoresist on the surface of the side of the high refractive index thin film structure 20 facing away from the substrate 30; then, the patterning treatment can be performed on the low refractive index structure layer by means of exposure treatment, and the required low refractive index structure 10 can be prepared and formed by a one-step exposure process, so that the preparation process flow can be simplified. In addition, the preparation method of the etching-free process is also beneficial to reducing scattering loss and asymmetry of a symmetrical structure caused by engineering preparation of the device.
Of course, the technical solution of the present invention is not limited thereto, and in some embodiments, the low refractive index structural layer may be formed by, but not limited to, dielectric materials such as silicon dioxide, silicon nitride, aluminum oxide, and the like. Correspondingly, the low refractive index structural layer can be subjected to patterning treatment by etching. Therefore, since only the low refractive index structure layer needs to be etched and engineering preparation is not needed for the high refractive index thin film structure 20 at the bottom of the low refractive index structure layer, the effect of avoiding scattering loss and asymmetry of the symmetrical structure caused by engineering preparation of the high refractive index thin film structure 20 can be achieved, and details are omitted here.
The multimode interference coupler 100 of the present application is applicable to an integrated system on a chip comprising the multimode interference coupler 100 described in any of the previous embodiments, the specific structure of the multimode interference coupler 100 being referred to in any of the previous embodiments. The on-chip integrated system provided by the application can be applied to all the technical schemes in all the embodiments, so that the on-chip integrated system at least has all the beneficial effects brought by the technical schemes and is not described in detail herein.
In particular, the on-chip integrated optical components such as the electro-optical modulator, the optical switch, the photoelectric detector and the like can be used as the basic element of the on-chip integrated system, and the multimode interference coupler 100 of any of the foregoing embodiments can be applied to the design of the on-chip integrated optical components such as the electro-optical modulator, the optical switch, the photoelectric detector and the like, thereby being beneficial to improving the communication capacity of the optical system and realizing the high-capacity communication and interconnection of the on-chip integrated system.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (9)
1. A multimode interference coupler, comprising:
a high refractive index thin film structure for transmitting the optical field; and
And the low-refractive-index structure is arranged on the surface of the high-refractive-index film structure and is used for limiting the light field to the high-refractive-index film structure.
2. The multimode interference coupler of claim 1, wherein the low refractive index structure comprises an input section, an optical coherence section, and an output section, the input section, the optical coherence section, and the output section being connected in sequence along a light field transmission direction of the high refractive index thin film structure.
3. The multimode interference coupler of claim 2 wherein the optical coherence section is equally-wide disposed in a direction from the input section to the output section.
4. The multimode interference coupler of claim 2, wherein the input section comprises a first wedge structure having a width that tapers in a direction from the input section to the output section.
5. The multimode interference coupler of claim 2, wherein the output section includes a second wedge structure having a width that tapers in a direction from the input section to the output section.
6. The multimode interference coupler of claim 5, wherein the second wedge structures are provided in a plurality, the plurality of second wedge structures being spaced apart at one end of the optical coherence section.
7. The multimode interference coupler of any one of claims 1 to 6, wherein the multimode interference coupler further comprises a substrate comprising:
A base layer; and
The buried bottom dielectric layer is arranged above the substrate layer, and one side of the buried bottom dielectric layer, which is away from the substrate layer, is provided with the high refractive index film structure.
8. A method of making a multimode interference coupler comprising the steps of:
providing a substrate with a high refractive index thin film structure;
And preparing a low-refractive-index structure on one side of the high-refractive-index thin film structure, which faces away from the substrate.
9. The method of making a multimode interference coupler of claim 8, wherein the step of making a low refractive index structure on a side of the high refractive index thin film structure facing away from the substrate comprises:
preparing a low refractive index structural layer on one side of the high refractive index thin film structure away from the substrate;
and patterning the low-refractive-index structural layer to obtain the low-refractive-index structure.
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