CN118067279A

CN118067279A - Pressure sensing device and manufacturing method thereof

Info

Publication number: CN118067279A
Application number: CN202211467238.6A
Authority: CN
Inventors: 李成佳; 李艳禄; 杨梅
Original assignee: Hongqisheng Precision Electronics Qinhuangdao Co Ltd; Avary Holding Shenzhen Co Ltd
Current assignee: Hongqisheng Precision Electronics Qinhuangdao Co Ltd; Avary Holding Shenzhen Co Ltd
Priority date: 2022-11-22
Filing date: 2022-11-22
Publication date: 2024-05-24
Also published as: TWI836751B

Abstract

A pressure sensing device comprises an insulating substrate, an insulating layer, a partition wall, a liquid metal compound, a pressure sensing set, a conductive through hole and a circuit substrate. The insulating layer surrounds and defines a first accommodating space and a second accommodating space. The isolation wall is arranged on the insulating layer and is arranged between the first accommodating space and the second accommodating space. The liquid metal compound is filled in the first accommodating space and the second accommodating space and is suitable for flowing in the first accommodating space and the second accommodating space. The pressure sensing set is arranged in the insulating layer and is positioned on the partition wall, the first accommodating space and the second accommodating space. The conductive through hole is arranged in the insulating layer and is positioned above the first accommodating space and the second accommodating space. The liquid metal compound flows in the internal accommodating space, and the pressure sensing set can be triggered by the liquid metal compound, so that the pressure sensing device can selectively realize different functions according to different inclination degrees.

Description

Pressure sensing device and manufacturing method thereof

Technical Field

The application relates to a pressure sensing device and a manufacturing method thereof.

Background

The pressure sensing device can be used for detecting the pressure and correspondingly switching different functions. However, as the accuracy of the pressure sensor is increased, the configuration of the components is more complex and more dense, and it is a problem to be solved how to simplify the internal components of the pressure sensor and improve the heat dissipation performance.

Disclosure of Invention

According to some embodiments of the present application, a pressure sensing device includes an insulating substrate, an insulating layer, a partition wall, a liquid metal compound, a pressure sensing set, a conductive via, and a circuit substrate. The insulating layer is arranged on the insulating substrate, wherein the insulating layer surrounds and defines a first accommodating space and a second accommodating space, the first accommodating space comprises a first outer side space, a first inner side space and a first communicating space communicated with the first outer side space and the first inner side space, and the second accommodating space comprises a second outer side space, a second inner side space and a second communicating space communicated with the second outer side space and the second inner side space. The isolation wall is arranged on the insulating layer and is arranged between the first inner space and the second inner space. The liquid metal compound is filled in the first accommodating space and the second accommodating space and is suitable for flowing in the first accommodating space and the second accommodating space. The pressure sensing set is arranged in the insulating layer and is positioned above the partition wall, the first inner space and the second inner space. The conductive via is disposed in the insulating layer and located above the first outer space and above the second outer space. The circuit substrate is electrically connected with the pressure sensing set and the conductive through hole.

In some embodiments, the top surface of the first outside space is lower than the top surface of the first inside space, and the top surface of the second outside space is lower than the top surface of the second inside space.

In some embodiments, the width of the first lateral space is greater than the width of the first medial space, and the width of the second lateral space is greater than the width of the second medial space.

In some embodiments, the top surface of the first inner space and the top surface of the second inner space are flush with the bottom surface of the pressure sensing group, and the top surface of the first outer space and the top surface of the second outer space are flush with the bottom surface of the conductive via.

In some embodiments, the material of the liquid metal composite layer comprises a liquid metal and a high molecular polymer.

In some embodiments, the bottom surface of the partition wall and the bottom surfaces of the first and second communication spaces are flush with each other.

In some embodiments, the axis of the conductive via is perpendicular to the level of the liquid metal compound when the pressure sensing device is in an upright state, and the liquid metal compound contacts the conductive via but does not contact the pressure sensing set.

In some embodiments, the pressure sensing device further comprises a first light emitting diode and a second light emitting diode, wherein the first light emitting diode is electrically connected with the conductive through hole, the second light emitting diode is electrically connected with the pressure sensing group, wherein when the pressure sensing device is in an upright state, the axis of the conductive through hole is perpendicular to the liquid surface of the liquid metal compound, the first light emitting diode emits light, and the second light emitting diode does not emit light; when the pressure sensing device is inclined to the state that the liquid metal compound contacts the pressure sensing group, the second light emitting diode emits light, and the first light emitting diode does not emit light.

According to some embodiments of the present application, a method of manufacturing a pressure sensing device includes providing a wiring substrate, wherein the wiring substrate includes a layer of insulating material and a wiring pattern within the layer of insulating material; setting a pressure sensing group on the circuit substrate; setting a first insulating layer on the circuit substrate, wherein the pressure sensing group is arranged in the first insulating layer; at least one conductive through hole is arranged to penetrate through the first insulating layer and is electrically connected with the circuit substrate; disposing a second insulating layer under the first insulating layer such that the second insulating layer defines an inner recess under the pressure sensor and an outer recess under the conductive via; arranging a partition wall below the pressure sensing group so that the inner side groove is divided into a first inner side groove and a second inner side groove; disposing a sacrificial layer under the second insulating layer, wherein the sacrificial layer is located between the first inner side groove and the outer side groove and between the second inner side groove and the outer side groove; disposing a third insulating layer under the isolation wall, the sacrificial layer and the second insulating layer; arranging an insulating substrate below the third insulating layer, the first inner side groove, the second inner side groove and the outer side groove, so that the first inner side groove, the second inner side groove and the outer side groove are respectively defined by the insulating substrate into a first inner side space, a second inner side space and an outer side space, wherein the insulating substrate is provided with at least one hole below the first inner side space, the second inner side space or the outer side space; removing the sacrificial layer to form a communication space, wherein the communication space is communicated with the first inner side space and the outer side space, and is communicated with the second inner side space and the outer side space; filling the liquid metal compound into the first inner space, the second inner space, the outer space and the communication space from the holes; and arranging the metal column in the hole.

In some embodiments, the step of disposing the pressure sensing set in the first insulating layer includes disposing the pressure sensor under a first circuit pattern of the circuit patterns and electrically connecting the first circuit pattern.

In some embodiments, the step of disposing a conductive via through the first insulating layer and electrically connecting with the circuit substrate includes disposing the conductive via under a second circuit pattern of the circuit patterns and electrically connecting with the second circuit pattern.

In some embodiments, the step of disposing the insulating substrate under the third insulating layer, the first inner recess, the second inner recess, and the outer recess includes communicating the holes with the outer space.

In some embodiments, the method further includes providing a first light emitting diode electrically connected to the conductive via and providing a second light emitting diode electrically connected to the pressure sensing set.

Embodiments of the present application provide a pressure sensing device and a method of manufacturing the same. Through the collocation arrangement of the pressure sensing device, the pressure sensing group, the first accommodating space and the second accommodating space, the internal components of the pressure sensing device can be simplified, and the heat dissipation efficiency can be improved.

Drawings

The following embodiments are to be read in conjunction with the accompanying drawings to provide a clear understanding of the aspects of the application. It should be noted that the various features are not drawn to scale according to industry standard practices. In fact, the dimensions of the various features may be arbitrarily expanded or reduced for clarity of discussion. Moreover, like reference numerals designate like elements.

Fig. 1 to 11, 12A and 12B are cross-sectional views of a pressure sensing device at various stages of manufacture according to some embodiments of the application, wherein fig. 12A and 12B further show light emitting states of the light emitting diode when the pressure sensing device is in different inclined states.

FIG. 13 is a cross-sectional view of a plurality of pressure sensing devices according to some embodiments of the application.

Detailed Description

When an element such as a layer, film, region or insulating substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between the elements.

Moreover, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as illustrated. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" may include both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

As used herein, "about," "approximately," or "approximately" includes both the values and average values within an acceptable deviation of the particular values determined by one of ordinary skill in the art, taking into account the particular number of measurements and errors associated with the measurements in question (i.e., limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the values.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present application and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

It should be noted that when the following embodiments are illustrated or described as a series of acts or events, the order of the description of the acts or events should not be limited, unless otherwise noted. For example, some operations or events may take on a different order, some may occur concurrently, some may not be required to be taken, and/or some may be repeated, than the present application. Also, the actual process may require additional operations before, during, or after each step to complete the circuit board. Thus, the present application may briefly explain some of the additional operations.

Please refer to fig. 1. First, a substrate 110 is provided, wherein the substrate 110 includes an insulating material layer 112, and a conductive material layer 114A and a conductive material layer 114B disposed on a top surface 112a and a bottom surface 112B of the insulating material layer 112.

In some embodiments, the material of the insulating material layer 112 may include a liquid crystal polymer (liquid crystal polymer, LCP), a bismaleimide resin (bismaleimide-triazine, BT), a resin containing an inorganic filler (e.g., ABF (Ajinomoto Build-up Film) resin or epoxy resin (epoxy)), a polyimide (polyimide, PI), such as a thermoplastic polyimide (thermoplastic polyimide, TPI), a polyethylene terephthalate (polyethylene terephthalate, PET), a polyethylene naphthalate (polythylene naphthalate, PEN), a polyurethane (PU, such as a thermoplastic polyurethane (thermoplastic polyurethane, TPU)), other suitable materials, derivatives of the foregoing, or any combination of the foregoing. In some embodiments, the material of the conductive material layer 114A and the conductive material layer 114B comprises gold, silver, copper, nickel, tin, other suitable metals, or any combination thereof.

Next, referring to fig. 2, a circuit pattern CP is disposed in the insulating material layer 112.

In some embodiments, please assist with fig. 1, the step of disposing the circuit pattern CP in the insulating material layer 112 includes removing a portion of the conductive material layer 114A and the conductive material layer 114B, and filling the conductive material in the via (e.g. electroplating) after forming the via in the insulating material layer 112, so that the conductive material, the conductive material layer 114A and the conductive material layer 114B together form the circuit pattern CP in the insulating material layer 112, and the circuit substrate 120 is obtained.

In some embodiments, the step of removing the conductive material layer 114A and a portion of the conductive material layer 114B may include bailing (routing), drilling (e.g., laser drilling or mechanical drilling), etching, stripping (peeling), other suitable methods, or combinations thereof. In one embodiment, the etching is performed to remove a portion of the conductive material layer 114A and the conductive material layer 114B, wherein the etchant is used to etch the conductive material layer 114A and the conductive material layer 114B at a faster rate (ETCHING RATE) than the insulating material layer 112. Thus, the insulating material layer 112 is substantially unaffected by the etching.

Next, please refer to fig. 3. The conductive layers 130A and 130B are disposed on the top and bottom surfaces CPa and CPb of the circuit pattern CP, and the pressure sensor 152 is disposed on the circuit pattern CP.

In some embodiments, the step of disposing the pressure sensor 152 under the circuit pattern CP includes disposing the pressure sensor 152 under the first circuit pattern CP1, wherein the pressure sensor 152 is electrically connected to the first circuit pattern CP1, and the first circuit pattern CP1 is a part of the circuit pattern CP.

In some embodiments, the material of conductive layer 130A and conductive layer 130B comprises gold, silver, copper, nickel, tin, other suitable metals, or any combination thereof. In some embodiments, the material of the conductive layer 130A is different from the line pattern CP, and the line pattern CP is surface-treated by using the conductive layer 130A and the conductive layer 130B to avoid oxidation of the line pattern CP. For example, the material of the conductive layer 130A is gold or nickel-gold, and the material of the circuit pattern CP is copper.

In some embodiments, the step of disposing the pressure sensor 152 on the circuit pattern CP includes connecting the conductive layer 130B and the pressure sensor 152 using the conductive material 140. In some embodiments, the conductive material 140 may be solder, conductive paste, or conductive paste, wherein the conductive paste is, for example, anisotropic conductive paste (anisotropic conductive film, ACF).

Next, please refer to fig. 4. An insulating layer 162 is disposed on the circuit substrate 120, wherein the pressure sensor 152 is disposed in the insulating layer 162, and a substrate 170 is disposed on the insulating layer 162.

In some embodiments, the material of the insulating layer 162 may include a high molecular polymer, such as epoxy (epoxy), polyimide (PI), such as Thermoplastic Polyimide (TPI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyurethane (PU, e.g., thermoplastic Polyurethane (TPU)), other suitable materials, derivatives thereof, or any combination thereof.

In some embodiments, disposing the insulating layer 162 on the circuit substrate 120 includes disposing an insulating material on the circuit substrate 120 and covering the pressure sensor 152; next, the insulating material under the pressure sensor 152 is removed, exposing the pressure sensor 152, forming an insulating layer 162. That is, the insulating layer 162 surrounds the pressure sensor 152 and defines a recess A0 for accommodating the pressure sensor 152, so that the pressure sensor 152 can be disposed in the insulating layer 162. Compared with the step of forming the insulating layer 162 first and then forming the groove in the insulating layer 162 under the circuit substrate 120 to set the pressure sensor 152 on the circuit substrate 120, the step of setting the pressure sensor 152 on the circuit substrate 120 and then forming the insulating layer 162 is simpler and more convenient without refilling insulating material between the pressure sensor 152 and the circuit substrate 120.

In some embodiments, the step of disposing the substrate 170 on the insulating layer 162 includes disposing the insulating material layer 172 on the insulating layer 162 and disposing the conductive material layer 174 on the insulating material layer 172 such that the insulating material layer 172 is located between the insulating layer 162 and the conductive material layer 174. In some embodiments, referring to fig. 1, the material of the insulating material layer 172 is substantially the same as or similar to the material of the insulating material layer 112, and the material of the conductive material layer 174 is substantially the same as or similar to the material of the conductive material layer 114A and the conductive material layer 114B, which are not described herein.

Next, please refer to fig. 5. The pressure sensing set 150 is disposed on the circuit substrate 120 and electrically connected to the circuit substrate 120.

In some embodiments, the first pressure sensing electrode 154A is disposed on the pressure sensor 152, such that the pressure sensor 152 is electrically connected to the first pressure sensing electrode 154A via the contact 152C. Next, the pressure sensing layer 156 is disposed on the first pressure sensing electrode 154A such that the first pressure sensing electrode 154A is interposed between the pressure sensor 152 and the pressure sensing layer 156. Then, the second pressure sensing electrode 154B is disposed on the pressure sensing layer 156 such that the pressure sensing layer 156 is interposed between the first pressure sensing electrode 154A and the second pressure sensing electrode 154B, and such that the pressure sensor 152, the first pressure sensing electrode 154A, the pressure sensing layer 156, and the second pressure sensing electrode 154B constitute the pressure sensing set 150.

In some embodiments, the materials of the first pressure sensing electrode 154A and the second pressure sensing electrode 154B may be the same or different, e.g., gold may be used as the material for both the first pressure sensing electrode 154A and the second pressure sensing electrode 154B.

In some embodiments, the pressure sensing group 150 may sense the magnitude of the pressure via a pressure capacitance technique or the degree of deformation of the pressure sensing layer 156 when pressed. For example, when the pressure sensing layer 156 is deformed by pressure, the gap between the pressure sensing layer 156 and the first pressure sensing electrode 154A is changed to change the capacitance, and the pressure sensor 152 detects the capacitance change to sense the pressure.

In some embodiments. When the pressure sensing set 150 detects pressure by using the deformation degree of the pressure sensing layer 156 when pressed, the pressure sensing layer 156 is made of a pressure sensitive material. In some embodiments. When the pressure sensing assembly 150 employs a pressure capacitance technique to detect pressure, the material of the pressure sensing layer 156 may comprise, for example, a porous conductive nanocomposite (porous nanocomposite, PNC). In one embodiment, the PNC may be made of a high molecular polymer (e.g., biodegradable plastic) doped with carbon nanotubes (carbon Nanotube CNT)) Is prepared. It is emphasized that using PNC doped with carbon nanotubes (carbon Nanotube CNT) as the material for the pressure sensing layer 156, a higher sensitivity can be achieved due to the higher porosity and conductivity (e.g., 86% porosity and conductivity).

Next, please refer to fig. 6. The conductive via CH is disposed through the insulating layer 162 and electrically connected to the circuit substrate 120.

In some embodiments, disposing the conductive via CH through the insulating layer 162 includes patterning the conductive material layer 174 (please refer to fig. 5 in addition) to form a patterned conductive material layer 174P; forming openings extending in the insulating layer 162, the insulating material layer 172, and the patterned conductive material layer 174P; and filling the openings with a conductive material to form conductive vias CH penetrating the insulating layer 162, the insulating material layer 172, and the patterned conductive material layer 174P, wherein the conductive vias CH directly contact and electrically connect the conductive layer 130B. In some embodiments, the bottom surface CHb of the conductive via CH is lower than the bottom surface 150B of the pressure sensing group 150, and the diameter D1 of the conductive via CH is smaller than the width W0 of the second pressure sensing electrode 154B in the same cross-sectional view. In some embodiments, the conductive material comprises gold, silver, copper, nickel, tin, other suitable metals, or any combination thereof.

In some embodiments, the conductive via CH is disposed under the second circuit pattern CP2 and electrically connected to the second circuit pattern CP2, and the second circuit pattern CP2 is a part of the circuit pattern CP. That is, the pressure sensing set 150 and the conductive vias CH are electrically connected to two different portions of the circuit pattern CP, respectively, and the pressure sensing set 150 is interposed between the adjacent conductive vias CH.

Next, please refer to fig. 7. An insulating layer 164 is disposed under the insulating layer 162, and a substrate 180 is disposed on the insulating layer 164 such that the insulating layer 164 defines an inner recess A1 under the pressure sensing element 150 and an outer recess A2 under the conductive via CH.

In some embodiments, disposing the substrate 180 on the insulating layer 164 includes disposing the insulating material layer 182 on the insulating layer 164 and disposing the conductive material layer 184 on the insulating material layer 182 such that the insulating material layer 182 is between the insulating layer 164 and the conductive material layer 184.

In some embodiments, the material of insulating layer 164 is the same as or similar to insulating layer 162. In some embodiments, referring to fig. 1 in addition, the material of the insulating material layer 182 is substantially the same as or similar to the material of the insulating material layer 112, and the material of the conductive material layer 184 is substantially the same as or similar to the conductive material layer 114A and the conductive material layer 114B.

In some embodiments, the steps of disposing the insulating layer 164 under the insulating layer 162, and disposing the substrate 180 under the insulating layer 164 include forming the insulating layer 164, the insulating material layer 182, and the conductive material layer 184 under the insulating layer 162, the conductive via CH, and the pressure sensing set 150, and removing the insulating layer 164, the insulating material layer 182, and the conductive material layer 184 under the pressure sensing set 150, thereby forming the inner recess A1 and exposing the pressure sensing set 150; and removing the insulating layer 164, the insulating material layer 182 and the conductive material layer 184 under the conductive via CH, thereby forming an outer groove A2 and exposing the conductive via CH. That is, the conductive via CH is disposed in the insulating layer 162 and the insulating layer 164 and is located above the outer groove A2. In some embodiments, insulating layer 164 may partially cover bottom surface 150b of pressure sensing group 150.

Next, please refer to fig. 8. The isolation wall IW is disposed under the pressure sensing set 150 and is located in the inner recess A1 (please refer to fig. 7 in an auxiliary manner), such that the inner recess A1 is divided into a first inner recess a11 and a second inner recess a12, and a plurality of sacrificial layers SL are disposed under the insulating layer 164, wherein the sacrificial layers SL are located between the first inner recess a11 and the first outer recess a21, and between the second inner recess a12 and the second outer recess a22, respectively. Therefore, the pressure sensing set 150 is disposed in the insulating layer 162 and the insulating layer 164 and is located above the partition wall IW, the first inner recess a11 and the second inner recess a 12.

In some embodiments, the partition wall IW completely blocks the first inner side groove a11 and the second inner side groove a12, so that the first inner side groove a11 and the second inner side groove a12 are not mutually communicated. In some embodiments, the material of the partition wall IW comprises epoxy, polyimide, or other suitable ink material. Furthermore, additives such as hardening agents or photo-initiators can be added to the above materials according to the actual requirements or product design. In some embodiments, the set partition wall IW may be formed by screen printing (SCREEN PRINT).

In some embodiments, the material of the sacrificial layer SL is different from the material of the insulating layer 164, the insulating material layer 182, the conductive material layer 184, and the conductive via CH. In one embodiment, the material of the sacrificial layer SL is silicon dioxide.

Next, referring to fig. 9, an insulating layer 166 is disposed under the isolation wall IW, the sacrificial layer SL, and the conductive material layer 184, and a substrate 190 is disposed on the insulating layer 166.

In some embodiments, the material of insulating layer 166 is the same as or similar to insulating layer 162.

In some embodiments, referring to fig. 8 and 9, in the step of disposing the insulating layer 166 under the isolation wall IW, the sacrificial layer SL, and the conductive material layer 184, the bottom surface of the insulating layer 166 under the isolation wall IW, the bottom surface of the insulating layer 166 under the sacrificial layer SL, and the bottom surface of the insulating layer 166 under the conductive material layer 184 are flush with each other, so that the depths of the first inner recess a11, the second inner recess a12, the first outer recess a21, and the second outer recess a22 are further increased.

In some embodiments, the step of disposing the substrate 190 on the insulating layer 166 includes disposing the insulating substrate 192 on the insulating layer 166 and disposing the conductive substrate 194 on the insulating substrate 192 such that the insulating substrate 192 is located between the insulating layer 166 and the conductive substrate 194, wherein the insulating substrate 192 and the conductive substrate 194 are below the insulating layer 166, the first inner recess a11, the second inner recess a12, the first outer recess a21, and the second outer recess a 22.

Accordingly, the first inner groove a11, the second inner groove a12, the first outer groove a21, and the second outer groove a22 define a first inner space SP11, a second inner space SP12, a first outer space SP21, and a second outer space SP22 by the insulating substrate 192 and the conductive substrate 194, respectively. Next, the insulating substrate 192 and the conductive substrate 194 are penetrated, such that the insulating substrate 192 and the conductive substrate 194 have a hole H21 and a hole H22 below the first outside space SP21 and the second outside space SP22, wherein the hole H21 communicates with the insulating substrate 192, the conductive substrate 194 and the first outside space SP21, and the hole H22 communicates with the insulating substrate 192, the conductive substrate 194 and the second outside space SP22.

Referring to fig. 8 and 9, the insulating substrate 192 and the conductive substrate 194 completely cover the first inner space SP11 and the second inner space SP12, such that the first inner space SP11 and the second inner space SP12 are respectively closed spaces, and the insulating substrate 192 and the conductive substrate 194 partially cover the first outer groove a21 and the second outer groove a22, such that the first outer space SP21 and the second outer space SP22 maintain open spaces (i.e. are communicated with the outside).

In some embodiments, referring to fig. 1 in addition, the insulating substrate 192 is substantially the same or similar to the insulating material layer 112, and the conductive substrate 194 is substantially the same or similar to the conductive material layer 114A and the conductive material layer 114B.

In some other embodiments, other holes (not shown) below the first and second inner spaces SP11 and SP12 may be formed in the insulating substrate 192 and the conductive substrate 194. The holes are connected to the insulating substrate 192, the conductive substrate 194 and the first inner space SP11, and connected to the insulating substrate 192, the conductive substrate 194 and the second inner space SP12, and are used to replace the holes H21 and H22 or can coexist with the holes H21 and H22 at the same time. In other words, holes may be provided under the first and second inner spaces SP11, SP12, the first and second outer spaces SP21, SP 22.

Next, referring to fig. 9 and 10, the sacrificial layer SL is removed to form the communication space SP3 (the first communication space SP31 and the second communication space SP 32), wherein the sacrificial layer SL can be removed by dry etching or wet etching. Next, the liquid metal compound LM is filled from the hole H21 into the first inner space SP11, the first outer space SP21, and the first communicating space SP31, and the liquid metal compound LM is filled from the hole H22 into the second inner space SP12, the second outer space SP22, and the second communicating space SP 32. Then, metal posts MC are disposed in holes H21 and H22. Accordingly, the first inner space SP11, the first outer space SP21, and the first communication space SP31 and the second inner space SP12, the second outer space SP22, and the second communication space SP32 constitute a first accommodation space SPa and a second accommodation space SPb, respectively, which are closed to the outside.

In some embodiments, the first communication space SP31 communicates with the first inner side space SP11 and the first outer side space SP21, and the second communication space SP32 communicates with the second inner side space SP12 and the second outer side space SP22. In some embodiments, the top surface SP21a of the first outside space SP21 and the top surface SP22a of the second outside space SP22 are flush, and the top surface SP11a of the first inside space SP11 and the top surface SP12a of the second inside space SP12 are flush.

The top surface SP21a of the first outside space SP21 is lower than the top surface SP11a of the first inside space SP11, and the top surface SP22a of the second outside space SP22 is lower than the top surface SP12a of the second inside space SP12. Therefore, when the axis of the conductive through hole CH is perpendicular to the liquid surface of the liquid metal compound LM, the liquid metal compound LM fills the first outside space SP21, the first communicating space SP31, the second outside space SP22, and the second communicating space SP32 (the liquid metal compound LM directly contacts the conductive through hole CH), but does not fill the first inside space SP11 and the second inside space SP12.

In some embodiments, the top surface SP11a of the first inside space SP11 and the top surface SP12a of the second inside space SP12 are flush with the bottom surface 150b of the pressure sensing group 150, and the top surface SP21a of the first outside space SP21 and the top surface SP22a of the second outside space SP22 are flush with the bottom surface CHb of the conductive via CH. In some embodiments, the bottom surface IWb of the partition wall IW and the bottom surfaces SP31b and SP32b of the first and second communication spaces SP31 and SP32 are flush with each other.

In some embodiments, the width W21 of the first outside space SP21 is greater than the width W11 of the first inside space SP11, and the width W22 of the second outside space SP22 is greater than the width W12 of the second inside space SP 12.

In some embodiments, please assist with fig. 9, the step of removing the sacrificial layer SL includes removing the sacrificial layer SL using an etchant. In one embodiment, the etchant etches the sacrificial layer SL at a faster rate (ETCHING RATE) than the insulating layer 164, the insulating material layer 182, the conductive material layer 184, the conductive via CH, and the insulating layer 166. Accordingly, insulating layer 164, insulating material layer 182, conductive material layer 184, conductive via CH, and insulating layer 166 are substantially unaffected by the etching. In some embodiments, when the material of the sacrificial layer SL is silicon dioxide, the etchant may employ a buffered oxide etchant (Buffered Oxide Etch, BOE) containing hydrofluoric acid and ammonium fluoride.

In some embodiments, the material of the liquid metal compound LM comprises a liquid metal (amorphous metal, or metallic glass) and a high molecular polymer. In some embodiments, the liquid metal compound LM is a liquid metal compound obtained by mixing single or multiple metal particles and a high polymer in a specific ratio and sufficiently fusing the additives in a low-temperature smelting manner, wherein the metal particles are in a non-crystalline state (commonly called liquid metal). That is, the liquid metal compound LM may flow in the first receiving space SPa and in the second receiving space SPb. In some embodiments, the liquid metal may be copper or copper alloy and the high molecular polymer may be a gel, a resin, or a combination thereof. In some embodiments, a binder or diluent may be further included in the liquid metal composite LM to improve adhesion or flowability, or wax powder, spherical graphite, a dispersing agent, a foaming agent, a leveling agent, or the like may be further included to improve dispersibility of the metal particles in the liquid metal composite LM.

In some embodiments, referring to fig. 9 and 10, the step of disposing the metal pillars MC in the holes H21 and H22 includes filling the holes H21 and H22 with a metal material, and obtaining the metal pillars MC after the metal material is solidified. In some embodiments, the top surface MCa of the metal posts MC is flush with the top surface 192a of the insulating substrate 192. In some embodiments, the material of the metal pillars MC comprises copper, such as copper paste. It can be appreciated that the metal column MC seals the hole H21 and the hole H22, so that the liquid metal compound LM can flow in the first receiving space SPa and the second receiving space SPb and can be electrically connected with the liquid metal compound LM.

Referring to fig. 11, an electronic device E is disposed and electrically connected to the conductive via CH.

In some embodiments, the step of disposing the electronic component E electrically connected to the conductive via CH includes disposing the conductive layer 130C on the metal pillar MC first to avoid oxidation of the metal pillar MC. For example, the material of the conductive layer 130C is gold or nickel-gold. Next, the electronic element E is disposed on the conductive layer 130C.

Referring to fig. 12A and 12B, the light emitting diode LED1 may be electrically connected to the conductive via CH, and the light emitting diode LED2 may be electrically connected to the pressure sensing set 150. To this end, the pressure sensing apparatus 100 is basically completed, wherein fig. 12A is a state in which the pressure sensing apparatus 100 is in an upright state (i.e., the axis of the conductive via CH is perpendicular to the liquid surface of the liquid metal compound LM), fig. 12B is a state in which the pressure sensing apparatus 100 is in an inclined state, and the liquid metal compound LM contacts the pressure sensing group 150.

In some embodiments, the step of disposing the light emitting diode LED1 electrically connected to the conductive via CH includes disposing the light emitting diode LED1 electrically connected to the conductive layer 130A. Specifically, the conductive material layer CL1 may be disposed on the light emitting diode LED1, and then the conductive material CM1 is used to connect the conductive layer 130A and the conductive material layer CL1, so that the light emitting diode LED1 is electrically connected to the conductive via CH through the conductive material layer CL1, the conductive material CM1, the conductive layer 130A, the second circuit pattern CP2 and the conductive layer 130B. In some embodiments, referring to fig. 1 as an auxiliary, the conductive material layer CL1 is substantially the same as or similar to the conductive material layer 114A and the conductive material layer 114B.

In some embodiments, the step of disposing the light emitting diode LED2 to electrically connect the pressure sensing set 150 includes using the conductive material CM2 to connect the conductive layer 130A located in the first circuit pattern CP1, such that the light emitting diode LED2 is electrically connected to the pressure sensing set 150 through the conductive material CM2, the conductive layer 130A, the first circuit pattern CP1, the conductive layer 130B, and the conductive material 140.

In some embodiments, the conductive material CM1 and the conductive material CM2 are substantially the same as or similar to the conductive material 140.

It should be emphasized that the design that the liquid metal compound LM flows in the first receiving space SPa and the second receiving space SPb and the pressure sensing set 150 is triggered by the liquid metal compound LM can be used to detect the inclination degree of the pressure sensing apparatus 100, and the light emitting diode LED1 and the light emitting diode LED2 can correspondingly present different light emitting modes (respectively emit the light L1 or the light L2) according to whether the pressure sensing set 150 is triggered or not, so as to reflect the inclination state of the pressure sensing apparatus 100.

Compared to the conventional pressure sensing device (such as a liquid pendulum inclination pressure sensing device requiring a plurality of electrodes in a conductive liquid), the pressure sensing set 150 of the present disclosure does not need to be immersed in the liquid metal compound LM, and can simplify the structure and prolong the service life of the pressure sensing set 150. Besides, the liquid metal compound LM can be used to detect the inclination degree, and has good conductivity, besides the liquid flow characteristic, and can be electrically connected with the light emitting diode LED1 or the light emitting diode LED2. It is worth mentioning that the liquid metal compound LM has excellent heat dissipation and corrosion resistance, which not only improves the internal heat dissipation efficiency but also improves the durability.

Specifically, when the liquid metal compound LM does not contact the pressure sensing set 150, for example, the pressure sensing device 100 is in an upright state (the axis of the conductive via CH is perpendicular to the liquid surface of the liquid metal compound LM, fig. 12A) or the inclination is within a specific inclination range (the axis of the conductive via CH is not perpendicular to the liquid surface of the liquid metal compound LM, not shown), the pressure sensing set 150 is not triggered by the liquid metal compound LM, the light emitting diode LED1 is controlled to be in a light emitting state by the electronic element E, and the light emitting diode LED2 does not emit light.

In contrast, when the tilting degree of the pressure sensing apparatus 100 exceeds a specific tilting range (i.e., the liquid metal compound LM flows to the contact pressure sensing set 150, fig. 12B), the pressure sensing set 150 is triggered by the liquid metal compound LM, indicating that the light emitting diode LED2 emits light, and at this time, the light emitting diode LED1 does not emit light. In addition, in some other embodiments, different electronic components may be used instead of the light emitting diode LED1 and the light emitting diode LED2 according to actual requirements, so that the pressure sensing device 100 may selectively exhibit different functions according to the tilting state.

Referring to FIG. 13, a cross-sectional view of a plurality of pressure sensing devices 100 is illustrated. In some embodiments, adjacent pressure sensing devices 100 are electrically connected to the conductive substrate 194 via the conductive material layer 184.

In view of the above, the embodiments of the present application provide a pressure sensing device and a method for manufacturing the pressure sensing device, wherein the pressure sensing device flows through a liquid metal compound in a receiving space inside the pressure sensing device, and the pressure sensing set can be triggered by the liquid metal compound, so that the pressure sensing device can selectively implement different functions (e.g. switching different light emitting diodes to emit light) according to different inclination degrees. In addition, through the good conductivity, heat dissipation and corrosion resistance of the internally filled liquid metal compound, the internal electrical connection can be realized, the internal heat dissipation efficiency of the pressure sensing device is further improved, and the pressure sensing device has better durability.

The foregoing generally illustrates the features of several embodiments of the present application so that those skilled in the art may more readily understand the present application. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes and/or obtaining the same advantages of the embodiments of the present application. It will be understood by those skilled in the art that the foregoing and equivalent structures do not depart from the spirit and scope of the application, and that they can be modified, altered, substituted, and altered without departing from the spirit and scope of the application.

[ Symbolic description ]

100 Pressure sensing device

110. 170, 180, 190 Substrate

112. 172, 182 Insulating material layer

112A, 192a, CPa, SP11a, SP12a, SP21a, SP22a, MCa: top surface

112B, 150b, CPb, CHb, IWb, SP b, SP32b: bottom surface

114A, 114B, 174, 184, CL1 conductive material layer

120 Circuit substrate

130A, 130B, 130C conductive layers

140 Conductive material

150 Pressure sensing set

152 Pressure sensor

152C contacts

154A first pressure sensing electrode

154B second pressure sensing electrode

156 Pressure sensing layer

162. 164, 166 Insulating layer

174P patterning the conductive material layer

192 Insulating substrate

194 Conductive substrate

A0 groove

A1 inner side groove

A11 first inner side groove

A12 second inner side groove

A2 outside groove

A21:first outside groove

A22 second outside groove

CM1, CM2 conductive material

CP line pattern

CP1 first line pattern

CP2 second line pattern

CH conductive via

D1 diameter

E electronic component

H21, H22 holes

L1, L2 light ray

LED1, LED2, light emitting diode

LM liquid Metal composite

MC metal column

IW (IW) partition wall

SL sacrificial layer

SP11 first interior space

SP12 second interior space

SP21 first outside space

SP22 second outside space

SP3 communicating space

SP31 first communication space

SP32 second communicating space

SPa, first accommodation space

SPb second accommodation space

W0 is the width.

Claims

1. A pressure sensing device, comprising:

An insulating substrate;

An insulating layer arranged on the insulating substrate, wherein the insulating layer surrounds and defines a first accommodating space and a second accommodating space,

Wherein the first accommodation space comprises a first outer side space, a first inner side space and a first communication space for communicating the first outer side space and the first inner side space,

Wherein the second accommodation space includes a second outside space, a second inside space, and a second communication space that communicates the second outside space and the second inside space;

the isolation wall is arranged on the insulating layer and is arranged between the first inner space and the second inner space;

a liquid metal compound filled in the first and second accommodation spaces and adapted to flow in the first and second accommodation spaces;

The pressure sensing group is arranged in the insulating layer and is positioned above the isolation wall, the first inner side space and the second inner side space;

A conductive via disposed within the insulating layer and located above the first outer space and above the second outer space; and

And the circuit substrate is electrically connected with the pressure sensing group and the conductive through hole.

2. The pressure sensing device of claim 1, wherein a top surface of the first outer space is lower than a top surface of the first inner space, and a top surface of the second outer space is lower than a top surface of the second inner space.

3. The pressure sensing device of claim 1, wherein the width of the first outer space is greater than the width of the first inner space, and the width of the second outer space is greater than the width of the second inner space.

4. The pressure sensing device of claim 1, wherein a top surface of the first inner space and a top surface of the second inner space are flush with a bottom surface of the pressure sensing group, the top surface of the first outer space and the top surface of the second outer space are flush with a bottom surface of the conductive via.

5. The pressure sensing device of claim 1, wherein the material of the liquid metal composite layer comprises a liquid metal and a high molecular polymer.

6. The pressure sensing device of claim 1, wherein a bottom surface of the partition wall and a bottom surface of the first communication space and a bottom surface of the second communication space are flush with each other.

7. The pressure sensing device of claim 1, wherein when the pressure sensing device is in an upright state, an axis of the conductive via is perpendicular to a level of the liquid metal compound, and the liquid metal compound contacts the conductive via but does not contact the pressure sensing set.

8. The pressure sensor of claim 7, further comprising a first light emitting diode electrically connected to the conductive via and a second light emitting diode electrically connected to the pressure sensing set,

Wherein when the pressure sensing device is in an upright state, the axis of the conductive through hole is perpendicular to the liquid surface of the liquid metal compound, the first light emitting diode emits light, and the second light emitting diode does not emit light;

When the pressure sensing device is tilted to the point that the liquid metal compound contacts the pressure sensing group, the second light emitting diode emits light, and the first light emitting diode does not emit light.

9. A method of manufacturing a pressure sensing device, comprising:

Providing a circuit substrate, wherein the circuit substrate comprises an insulating material layer and the circuit pattern positioned in the insulating material layer;

Setting a pressure sensing group on the circuit substrate;

a first insulating layer is arranged on the circuit substrate, wherein the pressure sensing group is arranged in the first insulating layer;

At least one conductive through hole is arranged to penetrate through the first insulating layer and is electrically connected with the circuit substrate;

Disposing a second insulating layer under the first insulating layer such that the second insulating layer defines an inner recess under the pressure sensor and an outer recess under the conductive via;

Arranging a partition wall below the pressure sensing group so that the inner side groove is divided into a first inner side groove and a second inner side groove;

Disposing a sacrificial layer under the second insulating layer, wherein the sacrificial layer is located between the first inner recess and the outer recess and between the second inner recess and the outer recess;

Disposing a third insulating layer under the isolation wall, the sacrificial layer, and the second insulating layer;

Arranging an insulating substrate below the third insulating layer, the first inner side groove, the second inner side groove and the outer side groove, so that the first inner side groove, the second inner side groove and the outer side groove define a first inner side space, a second inner side space and an outer side space by the insulating substrate respectively, wherein the insulating substrate is provided with at least one hole below the first inner side space, the second inner side space or the outer side space;

Removing the sacrificial layer to form a communication space, wherein the communication space is communicated with the first inner side space and the outer side space, and is communicated with the second inner side space and the outer side space;

filling a liquid metal compound from the hole into the first inner space, the second inner space, the outer space and the communication space; and

And arranging a metal column in the hole.

10. The method of manufacturing a pressure sensing device of claim 9, wherein disposing the pressure sensing group in the first insulating layer comprises:

The pressure sensor is arranged below a first circuit pattern in the circuit patterns and is electrically connected with the first circuit pattern.

11. The method of manufacturing a pressure sensing device of claim 9, wherein disposing the conductive via through the first insulating layer and electrically connecting with the circuit substrate comprises:

the conductive through hole is arranged below a second circuit pattern in the circuit patterns and is electrically connected with the second circuit pattern.

12. The method of claim 9, wherein disposing the insulating substrate below the third insulating layer, the first inner recess, the second inner recess, and the outer recess comprises the hole communicating with the outer space.

13. The method of claim 9, further comprising providing a first light emitting diode electrically connected to the conductive via and providing a second light emitting diode electrically connected to the pressure sensing set.