CN118048684A - Large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process and application method thereof - Google Patents
Large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process and application method thereof Download PDFInfo
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- CN118048684A CN118048684A CN202410227232.4A CN202410227232A CN118048684A CN 118048684 A CN118048684 A CN 118048684A CN 202410227232 A CN202410227232 A CN 202410227232A CN 118048684 A CN118048684 A CN 118048684A
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- spliced
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- single crystal
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- 239000010432 diamond Substances 0.000 title claims abstract description 58
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 53
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000005498 polishing Methods 0.000 claims abstract description 12
- 230000012010 growth Effects 0.000 claims abstract description 9
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 6
- 238000005520 cutting process Methods 0.000 claims abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000003698 laser cutting Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 7
- 238000004513 sizing Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a large-size high-quality mosaic spliced single crystal diamond applied to a semiconductor manufacturing process and a use method thereof, relating to the technical field of diamond semiconductor growth, wherein the method comprises the following steps: s1: uniformly sizing small-size single crystal diamond with the same thickness, and simultaneously performing bevel treatment on the side edges; s2: performing splicing growth on the treated diamond in the step S1 by adopting an MPCVD method; s3: and (2) polishing the two sides of the spliced diamond in the step (S2) to finally obtain the spliced diamond. The invention utilizes a wafer processing mechanism in the semiconductor manufacturing process to prepare the spliced diamond wafer by an MPCVD method, the crystal quality of the spliced diamond wafer depends on the crystal quality of unit crystal seeds, the original surface is used as a wafer surface, the crystal defect caused by splicing is avoided, the subsequent use is not affected in the splicing process, in addition, the crystal seed spacing of the original surface can replace the wafer dicing step, the production efficiency is improved, and meanwhile, a loss space is reserved for wafer cutting.
Description
Technical Field
The invention relates to the technical field of diamond semiconductor growth, in particular to a large-size high-quality mosaic spliced single crystal diamond applied to a semiconductor manufacturing process and a use method thereof.
Background
With the continuous development of the semiconductor industry, the more stringent the performance requirements on materials, diamond has high thermal conductivity and excellent electrical properties, and is known as a final semiconductor material. However, in the semiconductor process, in order to improve the semiconductor production efficiency and reduce the manufacturing cost of unit chips, a large-sized wafer is generally selected. And large-sized diamond single crystals are difficult to prepare due to the current technical limitations. Currently, there are two main methods for synthesizing large-size diamond: heteroepitaxy and mosaic splicing methods, in which single crystal diamond is deposited through a heterogeneous matrix, the diamond produced has a large stress due to the difference in thermal expansion coefficients of the substrate material and the diamond. The mosaic splicing method is limited by defects at the splicing position, cracks or dislocation are easy to occur, genetic phenomena can occur at the defects at the splicing position, and the defects at the splicing position can continuously extend along with continuous deposition of diamond, so that the spliced diamond is not monocrystalline diamond in a strict sense, and the defects at the splicing position can have serious influence on the performance of the diamond.
Disclosure of Invention
The invention aims to solve the technical problems that: the splicing diamond technology is applied to the semiconductor manufacturing industry, the application method of the large-size high-quality splicing diamond is provided, the original surface is used as a wafer surface, crystal defects caused by splicing are avoided, in addition, the wafer dicing step is replaced by the seed crystal spacing of the original surface, and a loss space is reserved for wafer dicing while the production efficiency is improved.
In order to achieve the above purpose, the invention adopts the following technical scheme:
A large-size high-quality mosaic spliced single crystal diamond applied to a semiconductor manufacturing process and a use method thereof comprise the following four steps:
S1: uniformly processing small-size single crystal diamond with the same thickness, including length and width, and performing bevel treatment on the side edges to form a prismatic table shape;
s2: tightly arranging the upward side with the larger area of the processed diamond in the step S1 as a growth surface on a base station, performing splicing growth by adopting an MPCVD method, and enabling the surface with the smaller area to be in contact with the carrier station as an original surface;
S3: and (2) polishing the two surfaces of the spliced diamond in the step (S2) to finally obtain the spliced diamond with high quality and large area, which can be applied to the semiconductor manufacturing process.
As a preferred embodiment, the single crystal diamond in step S1 has the same crystal orientation, and the crystal face and the crystal orientation error thereof do not exceed 2 °.
As a preferable technical scheme, the length and width of the single crystal diamond in the step S1 are in the range of 3-20 mm and the thickness is in the range of 0.1-3 mm.
As a preferred embodiment, the method of the bevel treatment in step S1 includes, but is not limited to, machining, laser machining, etc., and the angle ranges from 0 ° to 8 °.
As a preferred technical solution, the number of the spliced diamonds in the step S2 is 4-300, the spliced diamonds are closely and regularly arranged with each other, and the spliced shape includes but is not limited to a circle, a square, and the like.
As a preferable embodiment, the MPCVD method in step S2 includes: the temperature is 700-1150 ℃; the gas pressure is 10-25kpa, the hydrogen flow is 100-800 sccm, the methane flow is 1-10% of hydrogen, the nitrogen flow is 0.1-2sccm, and the deposition time is 10-150h.
As a preferable technical scheme, the double-sided polishing method in step S3 adopts a mechanical polishing method, a mechanochemical auxiliary polishing method or an ion polishing method to reduce the surface roughness of the spliced diamond to 100 nm.
Compared with the prior art, the invention has the following beneficial effects:
The invention utilizes a wafer processing mechanism in the semiconductor manufacturing process to prepare the spliced diamond wafer by an MPCVD method, the crystal quality of the spliced diamond wafer depends on the crystal quality of unit crystal seeds, the original surface is used as a wafer surface, the crystal defect caused by splicing is avoided, the subsequent use is not affected in the splicing process, in addition, the crystal seed spacing of the original surface can replace the wafer dicing step, the production efficiency is improved, and meanwhile, a loss space is reserved for wafer cutting.
Drawings
Fig. 1 shows the morphology of the seed crystal after processing, wherein the surface 1 is the original surface (wafer surface), and the surface 2 is the growth surface;
FIG. 2 is a schematic diagram of seed growth placement;
Fig. 3 is a schematic view of a tiled diamond wafer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
All embodiments of the application and alternative embodiments may be combined with each other to form new solutions, unless otherwise specified.
All technical features and optional technical features of the application may be combined with each other to form new technical solutions, unless specified otherwise.
Example 1
Selecting seed crystals with the thickness of 1mm and the surface of (100) orientation, uniformly trimming the seed crystals to the specification of 7mm by laser processing, ensuring the side orientation to be (100), and performing oblique angle treatment of 5 degrees on four sides of the seed crystals by laser, wherein the oblique angle treatment is shown in fig. 1;
the treated seed crystal is cleaned, and the seed crystal with small area is used as an original surface and is closely arranged on a stage in an MPCVD chamber, as shown in figure 2;
Performing short-time deposition by using an MPCVD method, wherein the hydrogen flow is 200sccm, the methane flow is 8%, and the deposition time is 40h;
The grown spliced seed crystal is polished on both sides, and the original surface is used as the wafer surface in the semiconductor manufacturing process, as shown in fig. 3.
Finally, it should be noted that: the above embodiments are merely preferred embodiments of the present invention for illustrating the technical solution of the present invention, but not limiting the scope of the present invention; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions; that is, even though the main design concept and spirit of the present invention is modified or finished in an insubstantial manner, the technical problem solved by the present invention is still consistent with the present invention, and all the technical problems are included in the protection scope of the present invention; in addition, the technical scheme of the invention is directly or indirectly applied to other related technical fields, and the technical scheme is included in the scope of the invention.
Claims (9)
1. The large-size high-quality mosaic spliced single crystal diamond applied to the semiconductor manufacturing process and the use method thereof are characterized by comprising the following steps:
S1: uniformly processing small-size single crystal diamond with the same thickness, including length and width, and performing bevel treatment on the side edges to form a prismatic table shape;
S2: closely arranging the upward facing diamond with larger area treated in the step S1 on a base station as a growth surface, and performing spliced growth by adopting an MPCVD method, wherein the growth surface is the lower surface of the prismatic station;
S3: and (2) polishing the two surfaces of the spliced diamond in the step (S2) to finally obtain the spliced diamond with high quality and large area, which can be applied to the semiconductor manufacturing process.
2. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the single crystal diamond in step S1 all have the same crystal orientation, and the crystal face and crystal orientation errors thereof are not more than 2 °.
3. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the single crystal diamond in step S1 has a length and width ranging from 3 to 20 mm and a thickness ranging from 0.1 to 3 mm.
4. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the bevel treatment in step S1 includes, but is not limited to, machining, laser machining, etc., with an angle in the range of 0-8 °.
5. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the number of the spliced diamonds in the step S2 is 4-300, the spliced diamonds are closely and regularly arranged with each other, and the spliced diamonds have circular shapes, square shapes and the like.
6. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the parameters of the MPCVD method in step S2 are: the temperature is 700-1150 ℃; the gas pressure is 10-25kpa, the hydrogen flow is 100-800 sccm, the methane flow is 1-10% of hydrogen, the nitrogen flow is 0.1-2sccm, and the deposition time is 10-150h.
7. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the double-sided polishing method in step S3 includes, but is not limited to, a mechanical polishing method, a mechanochemical auxiliary polishing method, an ion polishing method, and the like, and the surface roughness after polishing is less than 100nm.
8. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the original surface of the diamond grown in the step S2 is used as a wafer surface in the semiconductor manufacturing process.
9. The large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process as set forth in claim 1 and the use method thereof, wherein: the spliced diamond in the step S3 is used as a semiconductor wafer, and the semiconductor wafer is cut along the spliced diamond splice, and the cutting method includes, but is not limited to, laser cutting and the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410227232.4A CN118048684A (en) | 2024-02-29 | 2024-02-29 | Large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process and application method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410227232.4A CN118048684A (en) | 2024-02-29 | 2024-02-29 | Large-size high-quality mosaic spliced single crystal diamond applied to semiconductor manufacturing process and application method thereof |
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| CN118048684A true CN118048684A (en) | 2024-05-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118147747A (en) * | 2024-05-11 | 2024-06-07 | 山东天岳先进科技股份有限公司 | Large-size high-quality diamond crystal and application thereof |
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- 2024-02-29 CN CN202410227232.4A patent/CN118048684A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118147747A (en) * | 2024-05-11 | 2024-06-07 | 山东天岳先进科技股份有限公司 | Large-size high-quality diamond crystal and application thereof |
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