CN118048366A - 一种大豆根系镉抗性相关基因GmEIL3及应用 - Google Patents
一种大豆根系镉抗性相关基因GmEIL3及应用 Download PDFInfo
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Abstract
本发明属于分子生物学和基因工程技术领域,具体涉及一种大豆根系镉抗性相关基因GmEIL3及应用,调节大豆根系镉抗性的GmEIL3全长编码区序列如序列表SEQ ID NO.1所示;氨基酸序列如序列表SEQ ID NO.2所示。本发明提供大豆根系镉抗性相关基因并用于构建基因的表达载体和敲除载体,构建的植物表达载体经发根农杆菌介导法转化大豆幼嫩子叶,获得的基因过表达转基因毛状根在镉胁迫下发育受到抑制,获得的基因敲除转基因大豆在镉胁迫下根系发育良好,表明该基因负调控大豆根系的耐镉性。本发明对提高大豆根系耐镉的能力提供了理论依据与技术手段,具有很大的应用价值。
Description
技术领域
本发明属于分子生物学和基因工程技术领域,具体涉及一种大豆根系镉抗性相关基因GmEIL3及应用。
背景技术
镉(Cd)作为一种主要重金属污染物,对植物生长具有毒害作用。Cd污染严重抑制根系发育,降低作物产量。大豆(Glycine max)是重要的油料作物,在我国农业生产中占有重要地位。根系是植物生长发育的重要组织,在植物的生长过程中不仅可以提供水分、无机盐等营养物质,还具有合成植物激素和维持根际微生物等功能。当植物受到干旱、低温和盐胁迫等非生物胁迫时,植物通过改变侧根形状和数量适应胁迫,维持植物的正常生长。因此,根系的发育程度是影响作物产量的重要农艺性状之一,研究Cd胁迫下大豆根系发育相关基因的功能及作用机制可以为大豆高产分子育种提供新途径和新种质。
EIN3(ethylene insensitive 3)是一类植物特有的转录因子,位于细胞核中,其编码基因属于一个小的转录因子家族,在乙烯反应中发挥正向调节作用。EIN3和 EIN3-like(EIL)处于乙烯信号通路中的枢纽位置,决定着乙烯信号能否顺利传入细胞核,通过乙烯信号途径影响植物的生长发育。目前为止,人们发现大部分乙烯相关的生物学过程都是通过核心转录因子EIN3/EIL1完成的,EIN3/EIL1有大量结合靶点,涉及到诸如乙烯反应、根的发育、光形态建成、细胞分裂素协同作用、水杨酸协同作用、盐胁迫、镉胁迫、病原微生物进化等生物学过程。由此可见,EIN3/ EIL1在乙烯信号通路中发挥重要作用,还参与到植物生长发育、激素协同作用、环境胁迫其他生物学过程中,这些现象表明转录因子EIN3/EIL1是植物体内整个转录调控网络中的重要节点,具有整合信号、调控基因表达网络的作用。
EIN3/EIL1转录因子首先在拟南芥乙烯不敏感突变体中分离得到,迄今为止,研究人员也已在烟草、番茄、水稻、牡丹等植物中分离得到该基因。目前,对于EIN3/EIL1转录因子结构、功能、作用机制的研究已取得突破性进展。然而,植物中EIN3/EIL1家族成员较多,EIN3/EIL1序列多样性与其功能多样性之间的关系仍不明确。EIN3/EIL1对植物生长发育、胁迫响应及信号转导等的调节机制有待深入探索。
发明内容
为了解决上述技术问题,本发明提供一种大豆根系镉抗性相关基因GmEIL3及应用,从大豆中分离得到GmEIL3基因,构建该基因的植物表达载体及基因敲除载体,通过农杆菌介导法,将该基因转化大豆子叶中,以实现GmEIL3基因的功能分析。
本发明是这样实现的,提供一种大豆根系镉抗性相关基因GmEIL3,其编码区序列如SEQ ID NO.1所示。
提供一种大豆根系镉抗性相关基因GmEIL3编码的蛋白质,氨基酸序列如SEQ IDNO.2所示。
提供一种用于扩增大豆根系镉抗性相关基因GmEIL3的引物,包含:
OE-F:5'-ACTCTTGACCATGGTAGATCTATGATGATGATGCTTGAAGATAT-3';
OE-R:5'-GGGGAAATTCGAGCTGGTCACCTCACTGATACCAAATAGAGATAT-3';
其中,OE-F/OE-R的5'端的前15个碱基是构建过表达载体所需,不属于GmEIL3的基因序列,紧接着的6个碱基是酶切位点,OE-R去掉了终止密码子。
提供一种用于敲除GmEIL3基因的靶点序列,包含:
Target:5'-ACTGTGATCCCCCTCAGAGGCGG-3';
根据靶点序列设计基因编辑引物,包含:
CR-F:5'-cagtGGTCTCatgcaACTGTGATCCCCCTCAGAGG-3'
CR-R:5'-cagtGGTCTCaaaac cctctgagggggatcacagt-3'。
提供一种用于鉴定大豆GmEIL3基因编辑材料的鉴定引物,包含:
J216162-F7:5'-AGAGGAGGATGTGGAGGGAC-3';
J216162-R7:5'-CTGCAGTCAGAACACCCACT-3'。
提供一种含有大豆根系镉抗性相关基因GmEIL3的过表达载体,为pCAMBIA3301-CaMV35S-GFP-GmEIL3。
提供一种含有大豆根系镉抗性相关基因GmEIL3的过表达载体的应用,用于降低植物根系镉抗性。
提供一种大豆根系镉抗性相关基因GmEIL3的基因敲除载体,为pzmpl-bar-GmEIL3。
提供一种大豆根系镉抗性相关基因GmEIL3的基因敲除载体的应用,用于增强植物根系镉抗性。
提供一种大豆根系镉抗性相关基因GmEIL3在调节大豆根系镉抗性中的应用。
与现有技术相比,本发明的有益效果为:
本发明利用现有植物基因工程技术,克隆了大豆根系镉抗性相关基因GmEIL3,并通过农杆菌介导的方法将该基因转入大豆外植体,经过比较分析证明,镉胁迫下GmEIL3过表达材料根系发育指标显著下降,GmEIL3敲除材料在镉胁迫下根系发育良好,表明该基因负调控大豆根系的耐镉性,对提高大豆根系耐镉的能力提供了理论依据与技术手段,具有很大的应用价值。
附图说明
图1为GmEIL3基因全长1866 bp编码区序列的扩增结果。其中M为DL 2000;
图2为pCAMBIA3301-CaMV35S-GFP-GmEIL3重组载体测序比对结果;
图3为转化pCAMBIA3301-CaMV35S-GFP-GmEIL3的发根农杆菌菌落PCR结果。其中M为DL 2000;
图4为大豆GmEIL3基因敲除材料鉴定结果。其中M为DL 2000;
图5(a)为镉胁迫下GmEIL3过表达毛状根表型鉴定;
图5(b)为镉胁迫下GmEIL3过表达毛状根根系发育指标统计结果;
图6(a)为镉胁迫下GmEIL3基因敲除大豆根系表型鉴定;
图6(b)为镉胁迫下GmEIL3基因敲除大豆根系发育指标统计结果。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,下面结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用于解释本发明,并不用于限定本发明。
实施例1、大豆GmEIL3基因的克隆
(1)以大豆‘东农50’为试材。
(2)利用RNAprep pure植物总RNA提取试剂盒的方法提取总RNA,反转录合成cDNA第一链。
(3)基因的克隆:以反转录的cDNA第一链为模板,利用引物OE-F/OE-R进行PCR扩增,回收PCR产物,获得1866 bp的目的片段,结果见图1。
实施例2、植物表达载体构建
将纯化后的胶回收产物GmEIL3全长序列,应用In-Fusion HD Cloning kit连入pCAMBIA3301-CaMV35S-GFP线性化大片段中,反应体系为:2 μL 5×In-Fusion HD EnzymePremix,2 μL线性大片段,6 μL目的基因片段,50℃反应20 min。将连接产物转至大肠杆菌感受态DH5α中,经菌落PCR、摇菌、提质粒获得带有目的基因的植物表达载体pCAMBIA3301-CaMV35S-GFP-GmEIL3,测序,结果见图2。之后转化发根农杆菌R599感受态细胞,进行发根农杆菌菌落PCR验证,见图3,得到的含有重组质粒的发根农杆菌用于大豆子叶的转化。
实施例3、GmEIL3基因敲除载体构建
基因编辑载体的构建采用武汉伯远生物科技有限公司基因编辑试剂盒完成(货号:#REC44-I)。具体操作为:以cDNA为模板,使用基因编辑引物CR-F/CR-R扩增靶点序列。按照试剂盒说明进行酶切连接。将连接产物转化大肠杆菌感受态细胞,使用通用引物进行菌落PCR鉴定,提质粒获得敲除载体pzmpl-bar-GmEIL3。之后转化农杆菌感受态细胞,用于大豆种子侵染。
实施例4、转基因大豆材料的获得及验证
(1)重组质粒转化大豆子叶
选取含有pCAMBIA3301-CaMV35S-GFP-GmEIL3的发根农杆菌R599阳性克隆,接种于不加任何抗性的MS液体培养基(含100 mg/mL AS、1 mg/mL BA和1 mg/mL NAA)吸打混匀,将侵染液浓度范围控制在OD600=0.02~0.3之间,将大豆幼嫩子叶表面制造伤口,破坏其维管组织,与侵染液共培养约10 min,将外植体伤口朝下移植至含有MS固体培养基(含100 mg/mLAS)中,使用封口膜封口,放置于26℃暗培养3 d。将外植体洗菌后伤口朝上移至生根培养基中,置于26℃光照培养2~4周诱导毛状根。
提取含有pzmpl-bar-GmEIL3敲除载体的农杆菌菌液,加入到划伤处理的大豆萌发种子中,浸染10 min。再将外植体转移至共培养培养基(1/2MS固体,30 g/L蔗糖,2 mg/LBA,0.1 mg/L NAA,100 μM乙酰丁香酮,pH 5.2),25℃避光培养3~5 d。挑选共培养后的外植体,切去胚轴末端,插入恢复培养基(MS固体,30 g/L蔗糖,2 mg/L BA,0.1 mg/L NAA,400mg/L头孢噻肟,pH 5.8),恢复培养7~10 d。将长有丛生芽的外植体接种至筛选培养基(MS固体,30 g/L蔗糖,2 mg/L BA,0.1 mg/L NAA,400 mg/L头孢噻肟,5 mg/L草铵膦,pH 5.8)暗培养21 d。将经过筛选后长势良好的丛生芽,转移至伸长培养基(MS固体,30 g/L蔗糖,0.1mg/L NAA,400 mg/L头孢噻肟,pH 5.8)暗培养21 d。待幼芽生长至约5 cm时,转移至生根培养基(MS固体,30 g/L蔗糖,0.05 mg/L NAA,400 mg/L头孢噻肟,5 mg/L草铵膦,pH 5.8)暗培养21 d,洗干净幼苗根上附着的培养基,移载至装盛有营养土的育苗盘中,27℃暗培养,炼苗3~4周。
(2)GmEIL3过表达毛状根鉴定
荧光检测及表型检测:pCAMBIA3301-CaMV35S-GFP-GmEIL3过表达载体含有GFP标签,用于检测毛状根中特定基因的转化效果,仅侵染pCAMBIA3301-CaMV35S-GFP的大豆毛状根为对照,应用激光共聚焦显微镜检测大豆毛状根中GmEIL3-GFP融合蛋白的表达情况。在注射pCAMBIA3301-CaMV35S-GFP、pCAMBIA3301-CaMV35S-GFP-GmEIL3的大豆毛状根中均检测到荧光信号,表明GmEIL3-GFP融合蛋白在毛状根中成功表达。
(3)GmEIL3基因敲除材料鉴定
采用Bar试纸法直接对转基因植物内有无bar/pat蛋白进行鉴定,有条带的为转基因阳性植株。将经过Bar试纸检测的阳性幼苗移出培养基栽种到温室中直至收种。以整株T2代GmEIL3基因敲除大豆植株为实验材料,提取大豆叶片全基因组DNA,使用J216162-F7/J216162-R7引物进行PCR扩增,鉴定稳定遗传的GmEIL3基因敲除大豆株系。参考图4,PCR结果鉴定到262 bp特异条带,说明该T2代材料为GmEIL3基因敲除材料阳性植株。
实施例5、GmEIL3基因对大豆根系镉抗性的影响
培养GmEIL3过表达毛状根并转移至含有75 μmol/L CdCl2·2.5H2O的MS培养罐中,观察大豆根系形态并统计根系发育指标。参考图5(a)、图5(b)、图6(a)和图6(b),结果表明,与对照组相比,过表达GmEIL3的毛状根生长受到抑制,GmEIL3基因敲除大豆根系发育良好。镉胁迫下,GmEIL3过表达毛状根的主根长和侧根数量显著低于对照组,GmEIL3基因敲除大豆的主根长与侧根数量高于对照组。综合上述实验结果,证明了GmEIL3基因负调控大豆根系对镉的抗性。
Claims (10)
1.一种大豆根系镉抗性相关基因GmEIL3,其特征在于,基因GmEIL3的编码区序列如SEQID NO.1所示。
2.一种大豆根系镉抗性相关基因GmEIL3编码的蛋白质,其特征在于,氨基酸序列如SEQID NO.2所示。
3.一种用于扩增大豆根系镉抗性相关基因GmEIL3的引物,其特征在于,包含:
OE-F:5'-ACTCTTGACCATGGTAGATCTATGATGATGATGCTTGAAGATAT-3';
OE-R:5'-GGGGAAATTCGAGCTGGTCACCTCACTGATACCAAATAGAGATAT-3';
其中,OE-F/OE-R的5'端的前15个碱基是构建过表达载体所需,不属于GmEIL3的基因序列,紧接着的6个碱基是酶切位点,OE-R去掉了终止密码子。
4.一种用于敲除GmEIL3基因的靶点序列,其特征在于,包含:
Target:5'-ACTGTGATCCCCCTCAGAGGCGG-3';
根据靶点序列设计基因编辑引物,包含:
CR-F:5'-cagtGGTCTCatgcaACTGTGATCCCCCTCAGAGG-3'
CR-R:5'-cagtGGTCTCaaaac cctctgagggggatcacagt-3'。
5.一种用于鉴定大豆GmEIL3基因编辑材料的鉴定引物,其特征在于,包含:
J216162-F7:5'-AGAGGAGGATGTGGAGGGAC-3';
J216162-R7:5'-CTGCAGTCAGAACACCCACT-3'。
6.一种含有大豆根系镉抗性相关基因GmEIL3的过表达载体,其特征在于,为pCAMBIA3301-CaMV35S-GFP-GmEIL3。
7.一种含有大豆根系镉抗性相关基因GmEIL3的过表达载体的应用,其特征在于,用于降低植物根系镉抗性。
8.一种大豆根系镉抗性相关基因GmEIL3的基因敲除载体,其特征在于,为pzmpl-bar-GmEIL3。
9.一种大豆根系镉抗性相关基因GmEIL3的基因敲除载体的应用,其特征在于,用于增强植物根系镉抗性。
10.一种大豆根系镉抗性相关基因GmEIL3在调节大豆根系镉抗性中的应用。
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