CN118033814A - Optical amplifier based on doped lithium niobate waveguide on insulator and preparation method - Google Patents
Optical amplifier based on doped lithium niobate waveguide on insulator and preparation method Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 239000012212 insulator Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 23
- 239000013307 optical fiber Substances 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 14
- 238000010168 coupling process Methods 0.000 claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910052691 Erbium Inorganic materials 0.000 claims description 30
- 239000000835 fiber Substances 0.000 claims description 18
- -1 erbium ions Chemical class 0.000 claims description 17
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000233 ultraviolet lithography Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000003780 insertion Methods 0.000 abstract description 6
- 230000037431 insertion Effects 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 5
- 238000005086 pumping Methods 0.000 description 12
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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Abstract
The invention relates to the field of integrated optics and discloses an optical amplifier based on a doped lithium niobate waveguide on an insulator, which comprises a substrate layer, a silicon dioxide buffer layer and an erbium-doped thin-film lithium niobate device layer, wherein the erbium-doped thin-film lithium niobate device layer, the silicon dioxide buffer layer and the substrate layer are sequentially laminated, the erbium-doped thin-film lithium niobate device layer is provided with a ridge waveguide structure, and the height and the width of the ridge waveguide are both in the micron level. The invention also discloses a method for preparing the optical amplifier based on the doped lithium niobate waveguide on the insulator. The optical amplifier based on the doped lithium niobate waveguide on the insulator provided by the invention effectively solves the difficulties of low coupling efficiency, high device insertion loss, low output power and saturated power in the similar nano waveguide optical amplifier, has higher gain, is directly compatible with optical fibers, can be integrated with a micron-sized lithium niobate device on the insulator, has shorter waveguide chip length, and small size of packaged devices, and realizes wider application prospect.
Description
Technical Field
The invention relates to the field of integrated optics, in particular to an optical amplifier based on a doped lithium niobate waveguide on an insulator and a preparation method thereof.
Background
Optical amplification devices are an integral part of long-range optical communication systems and are the foundation of wide-area optical communication networks worldwide today. The invention of the 80 th EDFA enables long-distance optical communication and greatly influences the information transmission mode. The properties of erbium ion are very suitable for use in the field of optical fiber communications because its spontaneous emission spectrum is a broad band at a communication wavelength of 1550 nm, which can provide stable, low noise gain for optical signals.
Various optical amplifiers used today are erbium-doped fiber amplifiers (EDFAs), fiber raman amplifiers, fiber brillouin amplifiers, semiconductor Optical Amplifiers (SOAs), optical Parametric Amplifiers (OPAs), etc., wherein erbium-doped fiber amplifiers have advantages of high gain, low noise, wide gain bandwidth, etc., but require a fiber length of 10-100 meters, resulting in a larger device size, being unfavorable for miniaturization and integration, and unavoidable fiber dispersion and nonlinear effects; the semiconductor optical amplifier has low power consumption and easy integration, but has polarization sensitivity, large noise coefficient and poor stability, can not continuously work for a long time, and limits the use scene. The Raman, brillouin and optical parametric amplifier realizes optical amplification according to a nonlinear optical principle, and has high requirements on the coherence of pump light. Only under the phase matching condition can the efficient gain be obtained. The raman and brillouin lasers still need long optical fibers to be realized, and the optical parametric amplification needs strong pumping light, so that the miniaturization of the raman and brillouin lasers is limited, and the integrated optical parametric amplifier has limited applicable scenes.
In recent years, lithium niobate has attracted much attention as an "optical silicon" material, and lithium niobate has a wide transparent window, good nonlinearity, electro-optical/acousto-optic characteristics, and piezoelectric effect, and is one of the materials with the best comprehensive properties at present. And Lithium Niobate On Insulator (LNOI) not only has excellent physical properties of lithium niobate material, but also can limit the light spot mode to very small micro-nano scale, and by doping erbium ions in LNOI, the good gain effect of erbium ions can be combined with the integrated low-loss waveguide based on LNOI platform. Therefore, waveguide optical amplifiers based on the lithium niobate (Erbium doped lithium niobate on insulator, er: LNOI) platform on erbium doped insulators have great potential to achieve high net gain per unit length, thus achieving efficient erbium doped waveguide optical amplifiers (EDWA). Has great significance for realizing a stable and low-noise integrated amplifying device.
At present, a plurality of waveguide amplifiers are researched on an LNOI platform, and the waveguide amplifiers are nano waveguide optical amplifiers based on erbium-doped nano film lithium niobate (Erbium doped thin film lithium niobate, er: TFLN). However, the mode mismatch between the nano waveguide and the standard single mode fiber is large, so that higher coupling loss is inevitably brought, the pump light input and the signal light output are not facilitated, the overall insertion loss of the device is higher, and the use scene of the device as the device is limited.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention is to solve the technical problem of how to prepare an optical amplifier based on a doped lithium niobate waveguide on an insulator to solve the problems of large mode mismatch and high insertion loss between the waveguide and a standard single mode fiber.
In order to achieve the above object, the invention provides an optical amplifier based on a doped lithium niobate waveguide on an insulator, which comprises a substrate layer, a silicon dioxide buffer layer and an erbium-doped thin-film lithium niobate device layer, wherein the erbium-doped thin-film lithium niobate device layer, the silicon dioxide buffer layer and the substrate layer are sequentially laminated, the erbium-doped thin-film lithium niobate device layer is provided with a ridge waveguide, and the height and the width of the ridge waveguide are both in the micrometer level.
Further, the ridge waveguide has a width of 2 micrometers to 10 micrometers, and light propagates in a fundamental mode in the ridge waveguide.
Further, the thickness value of the erbium-doped thin film lithium niobate device layer is 3 micrometers, the thickness of the silicon dioxide buffer layer is 2 micrometers, and the thickness of the substrate layer is 0.5 millimeter.
Further, the tangential direction of the erbium-doped thin film lithium niobate device layer is an X-cut or a Z-cut.
Further, the material of the substrate layer is any one of lithium niobate, silicon and quartz.
Further, the ridge waveguide has a length of 1 cm to 20 cm.
The invention also provides a method for preparing the optical amplifier based on the doped lithium niobate micron waveguide on the insulator, which comprises the following steps:
Step1, depositing a silicon dioxide buffer layer on the surface of a substrate layer;
Step 2, doping erbium ions with preset concentration in lithium niobate; bonding an erbium-doped thin-film lithium niobate device layer onto the silicon dioxide buffer layer by a crystal bonding technology, and enabling the erbium-doped thin-film lithium niobate device layer to reach a preset thickness by a chemical mechanical polishing method;
And 3, forming a waveguide pattern on the erbium-doped thin film lithium niobate device layer by ultraviolet lithography, and preparing the ridge waveguide structure by combining a lithium niobate deep dry etching process.
Step 4, polishing two end faces of the ridge waveguide; performing input/output optical coupling through a lens optical fiber or a high numerical aperture optical fiber; finally, the EDWA of the optical amplifier based on the erbium-doped thin film lithium niobate micron-sized waveguide is realized through device encapsulation.
Further, in step 2, a predetermined concentration of erbium ions is doped in the lithium niobate, and the predetermined concentration is greater than 0.1 mol%.
Further, in step 2, the erbium-doped thin film lithium niobate device layer has a preset thickness of 3 micrometers
Further, in step 4, the core of the lens fiber is larger than the waveguide size, and the focusing light spot of the lens fiber is matched with the mode of the ridge waveguide.
The invention has the beneficial effects that:
1. The optical amplifier based on the doped lithium niobate waveguide on the insulator provided by the invention effectively solves the difficulties of low coupling efficiency, high device insertion loss and low output power and saturated power in the similar nano waveguide optical amplifier, and expands the actual use scene.
2. The micron-sized lithium niobate on insulator has higher gain, is directly compatible with optical fibers, can be integrated with a micron-sized lithium niobate on insulator device, and has wider application prospect.
3. The waveguide chip has shorter length, smaller size and small size of the EWDA device after packaging.
The conception, specific structure, and technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, features, and effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of an optical amplifier based on a doped lithium niobate waveguide on an insulator according to an embodiment of the present invention;
FIG. 2 is a graph showing the net gain in an optical amplifier as a function of power on a 980 nm pump laser chip according to an embodiment of the present invention;
FIG. 3 is a graph showing the net gain inside an optical amplifier according to an embodiment of the present invention as a function of on-chip signal power under saturated pumping;
fig. 4 is a graph of spectral comparison before and after signal amplification at maximum gain (1531 nm) of an optical amplifier according to an embodiment of the present invention.
The reference numerals in the drawings are: 1. a substrate layer; 2. a silicon dioxide buffer layer; 3. an erbium-doped thin film lithium niobate device layer; 4. a ridge waveguide; 5, a step of; a lens optical fiber, 5-1, a lens optical fiber core; 5-2, focusing light spots of the lens optical fibers.
Detailed Description
The following description of the preferred embodiments of the present invention refers to the accompanying drawings, which make the technical contents thereof more clear and easy to understand. The present invention may be embodied in many different forms of embodiments and the scope of the present invention is not limited to only the embodiments described herein.
In the drawings, like structural elements are denoted by like reference numerals. The dimensions and thickness of each component shown in the drawings are arbitrarily shown, and the present application is not limited to the dimensions and thickness of each component. The thickness of the components is exaggerated in some places in the drawings for clarity of illustration.
Examples
Referring to fig. 1, in one embodiment of the present invention, there is provided an optical amplifier based on a doped lithium niobate waveguide on an insulator, which includes a substrate layer 1, a silicon dioxide buffer layer 2, an erbium doped thin film lithium niobate device layer 3, the silicon dioxide buffer layer 2, and the substrate layer 1 being sequentially stacked, the erbium doped thin film lithium niobate device layer 3 being provided with a ridge waveguide 4, and the ridge waveguide 4 having a height and a width of micrometer scale.
Preferably, the width of the ridge waveguide 4 is 2 micrometers-10 micrometers, the light in the ridge waveguide 4 propagates in a fundamental mode, and the light spot is shown as the end face of the ridge waveguide 4 in micrometer scale.
The invention adopts erbium-doped lithium niobate ridge micron-sized waveguide with the size between 2 microns and 10 microns, has good mode matching with the lens optical fiber/high numerical aperture optical fiber, effectively solves the difficulties of low coupling efficiency, high device insertion loss and low output power and saturated power in the similar nano waveguide optical amplifier, and expands the actual use scene.
Various optical amplifiers used in the prior art include erbium-doped optical fiber amplifiers (Erbium doped fiber amplifier, EDFA), optical fiber raman amplifiers, optical fiber brillouin amplifiers, semiconductor optical amplifiers (Semiconductor optical amplifier, SOA), optical parametric amplifiers (Optica PARAMETRIC AMPLIFIER, OPA), etc., but they all have their own unavoidable drawbacks, such as the EDFA requires an optical fiber length of 10-100 meters, resulting in a larger device size, which is disadvantageous for miniaturization and integration; the SOA has large noise coefficient and poor stability, and cannot continuously work for a long time; the raman, brillouin and optical parametric amplifiers can obtain high-efficiency gain only under the phase matching condition. In the embodiment of the invention, the thickness of the erbium-doped thin-film lithium niobate device layer 3 is between 2 microns and 10 microns, the thickness of the silicon dioxide buffer layer 2 is 2 microns or 5 microns, and the thickness of the substrate layer 1 is between 300 microns and 600 microns, so that the length of the waveguide chip is shorter, the size is smaller, and the size of the EWDA packaged device is small.
In a preferred embodiment of the present invention, the thickness of the erbium doped thin film lithium niobate device layer 3 is 3 micrometers, the thickness of the silicon dioxide buffer layer 2 is 2 micrometers, and the thickness of the substrate layer 1 is 0.5 millimeter.
Preferably, the tangential direction of the erbium-doped thin film lithium niobate device layer 3 is X-cut or Z-cut, and the material of the substrate layer 1 is any one of lithium niobate, silicon and quartz, preferably a silicon material.
Preferably, the ridge waveguide 4 has a length of 1 cm to 20 cm, and in order to reduce the footprint of the device, the waveguide may incorporate a curved portion, in this example the ridge waveguide 4 has a length of 6 cm.
In another embodiment of the present invention, there is also provided a method of preparing an optical amplifier based on a doped lithium niobate micron waveguide on an insulator, comprising the steps of:
Step 1, depositing a silicon dioxide buffer layer 2 on the surface of a substrate layer 1, wherein the thickness of the silicon dioxide buffer layer 2 deposited on the surface of the substrate layer 1 is preferably 2 micrometers;
Step 2, doping erbium ions with preset concentration in lithium niobate; bonding the erbium-doped thin-film lithium niobate device layer 3 onto the silicon dioxide buffer layer 2 by a crystal bonding technology, and enabling the erbium-doped thin-film lithium niobate device layer 3 to reach a preset thickness by a chemical mechanical polishing method; the predetermined concentration of erbium ions is preferably more than 0.1 mol% in the lithium niobate, and the doping method may be any one of ion implantation, crystal growth, and the like. The preset thickness of the erbium-doped thin film lithium niobate device layer 3 is preferably 3 micrometers;
And 3, forming a waveguide pattern on the erbium-doped thin film lithium niobate device layer 3 by ultraviolet lithography, and preparing the waveguide 4 by combining a lithium niobate deep dry etching process.
And 4, polishing the two end faces of the ridge waveguide 4 to reduce the insertion loss of the device. The input/output optical coupling is performed through the lensed fiber 5 or the high numerical aperture fiber. The core 5-1 of the lensed fiber is still larger than the waveguide size, but the focused spot 5-2 matches the mode of the micron ridge waveguide. Fig. 1 shows a lensed fiber coupling approach. Finally, an optical amplifier (Erbium doped waveguide amplifier, EDWA) based on erbium-doped thin film lithium niobate micron-sized waveguide is realized through device encapsulation.
The lithium niobate (Lithium niobate on insulator, LNOI) on the insulator is doped with erbium ions, so that a good gain effect of the erbium ions can be combined with the integrated low-loss waveguide based on the LNOI platform, and meanwhile, as the doping concentration of the erbium ions is higher than that in the EDFA, a high net gain per unit length can be realized, thereby realizing high-efficiency EDWA, realizing shorter waveguide chip length, smaller size and small EWDA device size after encapsulation.
In an embodiment of the invention, for the prepared lithium niobate waveguide doped insulator optical amplifier EDWA, the thickness of the erbium doped thin film lithium niobate device layer 3 is between 2 microns and 10 microns, the height of the ridge waveguide 4 is 2 microns or 5 microns, the width of the ridge waveguide 4 is between 2 microns and 10 microns, and in a preferred embodiment of the invention, the height of the ridge waveguide 4 is 3 microns and the width is 3 microns.
Preferably, the coupling lens optical fiber has a focused spot size of 2.5 microns at 1550 nm wavelength band, which matches the 3 micron ridge waveguide mode.
The invention adopts the micron-sized lithium niobate on the insulator, has the thickness of between 2 and 10 microns, increases the size of light spots, increases gain area, has higher gain, is directly compatible with optical fibers, and can be integrated with a micron-sized lithium niobate on the insulator.
In another embodiment of the invention, 1531 nm of signal light is generated by a 1520-1600 nm C-band tunable continuous laser, 980 nm of pump light is generated by a 980 nm single-mode laser, and the 980 nm of pump light is respectively combined by a 980 nm/1550 nm wavelength division multiplexer after passing through a polarization controller, and is coupled into a lithium niobate ridge waveguide, namely a unidirectional pump mode, at an input end through a single-mode lens optical fiber end face; the output signal light and the input pump light can be split at the output end through another single-mode lens optical fiber and another 980-nm/1550-nm wavelength division multiplexer in a bidirectional pumping mode, namely a bidirectional pumping mode.
Since the spontaneous emission spectrum of erbium ions is wavelength-dependent, the spontaneous emission intensity of erbium ions is highest at 1531 nm, only the case where the wavelength of the signal light is 1531 nm is considered in this embodiment. The spontaneous emission spectrum of erbium ions shows that the erbium ions have gain effects in the wavelength range from 1525 nanometers to 1570 nanometers, so that in actual use, the invention can amplify signal light from 1525 nanometers to 1570 nanometers.
In the preferred embodiment of the present invention, as shown in fig. 2, the signal light power is fixed, and the change relation of the internal net gain with the power on the pumping light sheet is obtained by scanning the power on the pumping light sheet. When the power on the pumping light sheet is lower, the internal net gain is rapidly increased along with the power on the pumping light sheet; when the power on the pumping light sheet reaches 40mW, the pumping is near saturation, the saturation gain is about 17.6dB, the internal net gain can not be increased along with the increase of the power on the pumping light sheet, and the conversion efficiency is about 30 percent at the highest.
In the preferred embodiment of the invention, as shown in fig. 3, the saturated pump power is maintained, and the on-chip signal power is changed, resulting in a change in the internal net gain with the on-chip signal optical power. When the optical power of the on-chip signal is-6.6 dBm, the internal net gain reaches 17.6dB; the internal net gain decreases with increasing on-chip signal optical power, and when the on-chip signal optical power reaches 0.6dBm, the internal net gain is 0dB.
As shown in fig. 4, in the preferred embodiment of the present invention, the input on-chip signal light power is-6.6 dBm, the spectrum of the output signal light is tested under the condition of no pumping, the on-chip enhancement factor reaches 41.8dB, the intensity of the off-chip output signal light reaches 10dBm, and the actual internal net gain reaches 17.6dB, which verifies that the present invention can realize higher gain, solves the problem of low coupling efficiency of the nano waveguide optical amplifier, and has higher output power.
In the scheme provided by the invention, the coupling mode is not limited to the end face coupling of the fiber pigtail, and can be the coupling of space light to the waveguide through the objective lens or the coupling of the grating. In the proposal provided by the invention, the doped lithium niobate is not limited to erbium-doped lithium niobate, but also can be ytterbium-doped lithium niobate and the like, thereby realizing the optical amplification function of other wave bands.
The foregoing describes in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the invention without requiring creative effort by one of ordinary skill in the art. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (10)
1. The optical amplifier based on the doped lithium niobate waveguide on the insulator is characterized by comprising a substrate layer, a silicon dioxide buffer layer and an erbium-doped thin-film lithium niobate device layer, wherein the erbium-doped thin-film lithium niobate device layer, the silicon dioxide buffer layer and the substrate layer are sequentially laminated, the erbium-doped thin-film lithium niobate device layer is provided with a ridge waveguide, and the height and the width of the ridge waveguide are both in a micron level.
2. The lithium niobate waveguide-doped based optical amplifier of claim 1, wherein the ridge waveguide has a width of 2 microns to 10 microns, and wherein light propagates in a fundamental mode.
3. The lithium niobate waveguide-based doped insulator optical amplifier of claim 2, wherein the erbium doped thin film lithium niobate device layer has a thickness of 3 microns, the silicon dioxide buffer layer has a thickness of 2 microns, and the substrate layer has a thickness of 0.5 millimeters.
4. A lithium niobate waveguide-doped based optical amplifier according to claim 3, wherein the tangential direction of the erbium doped thin film lithium niobate device layer is either an X-cut or a Z-cut.
5. The lithium niobate waveguide-based doped insulator optical amplifier of claim 4, wherein the material of the substrate layer is any one of lithium niobate, silicon, and quartz.
6. An optical amplifier based on a sub-doped lithium niobate waveguide on insulator according to claim 5, wherein the ridge waveguide has a length of 1 cm to 20 cm.
7. A method of making an optical amplifier based on a doped lithium niobate micron waveguide on an insulator, comprising the steps of:
Step1, depositing a silicon dioxide buffer layer on the surface of a substrate layer;
Step 2, doping erbium ions with preset concentration in lithium niobate; bonding an erbium-doped thin-film lithium niobate device layer onto the silicon dioxide buffer layer by a crystal bonding technology, and enabling the erbium-doped thin-film lithium niobate device layer to reach a preset thickness by a chemical mechanical polishing method;
and 3, forming a waveguide pattern on the erbium-doped thin film lithium niobate device layer by ultraviolet lithography, and preparing the ridge waveguide by combining a lithium niobate deep dry etching process.
Step 4, polishing two end faces of the ridge waveguide; performing input/output optical coupling through a lens optical fiber or a high numerical aperture optical fiber; finally, the EDWA of the optical amplifier based on the erbium ion doped lithium niobate micron waveguide on the insulator is realized through device encapsulation.
8. The method of making a lithium niobate micron waveguide-based doped optical amplifier of claim 7 wherein in step 2, said lithium niobate is doped with a predetermined concentration of erbium ions, said predetermined concentration being greater than 0.1 mole percent.
9. The method of making a doped lithium niobate micron waveguide based optical amplifier of claim 8 wherein in step 2 the predetermined thickness of the erbium doped thin film lithium niobate device layer is 3 microns.
10. The method of making a doped lithium niobate micron waveguide based optical amplifier of claim 9 wherein in step 4 the core of the lensed fiber is larger than the waveguide size and the focused spot of the lensed fiber is matched to the mode of the ridge waveguide.
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