CN118028754A

CN118028754A - Magnetron sputtering wafer processing device

Info

Publication number: CN118028754A
Application number: CN202410426325.XA
Authority: CN
Inventors: 张陈斌; 刘超; 张超; 宋永辉; 王世宽
Original assignee: Wuxi Shangji Semiconductor Technology Co ltd
Current assignee: Wuxi Shangji Semiconductor Technology Co ltd
Priority date: 2024-04-10
Filing date: 2024-04-10
Publication date: 2024-05-14
Anticipated expiration: 2044-04-10
Also published as: CN118028754B

Abstract

The application discloses a magnetron sputtering wafer processing device, which comprises a reaction inner cavity, a carrying platform, a heating mechanism, a first lifting mechanism, a target material, a lower shielding piece and an upper shielding piece, wherein the reaction inner cavity comprises an upper cavity, a lower cavity and a second lifting mechanism, a first cooling channel is arranged in the upper cavity, and a second cooling channel is arranged in the carrying platform; the upper shielding piece and the lower shielding piece are matched, so that metal atoms can be comprehensively prevented from depositing downwards, and the cleaning of the cavity is ensured; by matching the movable upper cavity with the movable lower cavity, even if metal atoms are deposited on the cavity wall, the upper cavity is only required to be treated, so that the method is convenient and quick; the first cooling channel and the second cooling channel are further matched, and the parts which are easy to contact metal atoms and easy to heat can be cooled in a targeted manner, so that the reliable temperature control is performed on the wafer, the wafer is ensured to be maintained at the target set temperature, and the film forming quality, the deposition rate and the sheet resistance uniformity are further ensured.

Description

Magnetron sputtering wafer processing device

Technical Field

The application relates to the technical field of semiconductor manufacturing equipment, in particular to a magnetron sputtering wafer processing device.

Background

Physical vapor deposition (Physical Vapor Deposition, PVD) techniques refer to techniques that employ physical methods to vaporize a material source surface into gaseous atoms or molecules, or to partially ionize ions, under vacuum conditions, and deposit a thin film on a substrate surface by low pressure gas (or plasma). Specifically, in the magnetron sputtering process, the reaction gas in the vacuum cavity is ionized to form plasma, and the target is bombarded by positive ions, so that metal atoms of the target escape and move in the vacuum cavity, and finally are deposited on the wafer to form a film.

When the metal atoms of the target material move in the vacuum cavity, the metal atoms are easy to attach on the inner wall of the vacuum cavity, so that the inner wall is polluted. In order to solve the problem, in the prior art, a shielding piece is arranged in a vacuum cavity of the magnetron sputtering equipment, so that the shielding piece surrounds and shields the wafer, and then metal atoms can be prevented from depositing downwards. In order to ensure the comprehensiveness of shielding, in some devices, the shielding piece can be made to contact the edge of the wafer, so that although metal atoms can not enter the space below the wafer, the edge of the shielded wafer cannot be coated, cutting is needed subsequently, and the shielding piece is easy to adhere to the wafer. However, if a gap is provided between the shield and the wafer, metal atoms may be deposited into the space below the wafer through the gap.

In addition, along with the progress of magnetron sputtering, moving metal atoms deposit on the surface of the wafer, so that the temperature of the wafer is continuously increased, and the actual temperature of the wafer is obviously higher than the target set temperature; meanwhile, the moving metal atoms collide with the surface of the shielding piece and are deposited on the shielding piece, so that the temperature of the shielding piece is increased, and the high-temperature shielding piece further increases the temperature of the wafer due to the fact that the shielding piece is close to or even contacts with the wafer, so that the film forming quality, the deposition rate and the sheet resistance uniformity are affected; under the influence of moving metal atoms, the temperature inside the vacuum cavity also increases, eventually leading to the temperature of the wafer not being stabilized near the target set temperature, which can greatly reduce the product yield.

Disclosure of Invention

The application aims to overcome the defects in the prior art and provide a magnetron sputtering wafer processing device.

To achieve the above technical object, the present application provides a magnetron sputtering wafer processing apparatus, including: a reaction chamber for providing space for wafer processing; the carrier is arranged in the reaction cavity; the heating mechanism is used for heating the carrier so as to heat the wafer in a heat transfer mode; the first lifting mechanism is used for driving the carrying platform to do lifting motion; the target material is arranged in the reaction cavity and is suspended above the carrying platform; the lower shielding piece is arranged on the carrier and used for supporting the wafer; the upper shielding piece is arranged above the carrying platform, when the carrying platform ascends, the lower shielding piece can prop against the upper shielding piece, the middle part of the upper shielding piece is open, the wafer can be exposed under the target through the open part of the upper shielding piece so that metal atoms are deposited on the surface of the wafer, and the upper shielding piece and the lower shielding piece are matched to prevent the metal atoms from polluting the cavity; wherein, the reaction inner chamber includes: the target material is arranged at the top of the upper cavity, and the upper shielding piece is arranged at the bottom of the upper cavity; the carrier is arranged in the lower cavity and can move towards the upper cavity under the driving of the first lifting mechanism; the second lifting mechanism is used for driving the upper cavity and the lower cavity to be close to or far away from each other, when the upper cavity and the lower cavity are far away from each other, the reaction cavity is opened so as to be convenient for the wafer to enter and exit, and after the upper cavity and the lower cavity are close to each other, the reaction cavity is closed so as to be convenient for the wafer to receive and process; the upper cavity is provided with a first cooling channel for circulating coolant; the carrier is provided with a second cooling channel which is also used for circulating coolant; in the magnetron sputtering process, the coolant can cool the upper shielding piece through the first cooling channel, and the coolant can cool the lower shielding piece through the second cooling channel.

Further, a first step is arranged at the top of the upper cavity and is used for limiting the target; and/or the bottom of the upper cavity is provided with a second step, the bottom surface of the upper shielding piece is provided with a clamping groove, and when the upper cavity supports the upper shielding piece, the second step is inserted into the clamping groove.

Further, a third cooling channel is arranged in the lower cavity and is also used for circulating a coolant; and/or the magnetron sputtering wafer processing device further comprises a main cavity, the upper cavity is fixedly arranged on the upper part of the main cavity, the lower cavity is movably arranged on the lower part of the main cavity through an elastic corrugated pipe, and the second lifting mechanism is used for driving the lower cavity to do lifting motion.

Further, the thickness of the wall of the inner ring of the upper shade for contacting the lower shade is tapered, and the closer to the center, the smaller the thickness of the wall of the inner ring of the upper shade.

Further, the lower shade includes: a cover part for supporting the wafer, wherein the cover part faces the table surface of the carrier when the lower shielding piece is covered on the carrier; a cover part, when the lower shielding piece is covered on the carrying platform, the cover part faces the side surface of the carrying platform; when the lower shielding piece is covered on the carrying platform, a fourth cooling channel is arranged between the cover part and the table top of the carrying platform, and the fourth cooling channel is communicated with the second cooling channel.

Further, the cover part is provided with a connecting hole; a fifth cooling channel is arranged in the upper shielding piece; when the lower shielding piece abuts against the upper shielding piece, the connecting holes are communicated with the fifth cooling channel, and the coolant flowing in through the second cooling channel can enter the fifth cooling channel through the fourth cooling channel and the connecting holes.

Further, an elastic member is arranged between the cover part and the side surface of the carrier, and when the lower cover member is covered on the carrier, the elastic member is compressed and can reversely abut against the carrier.

Further, the middle part of the carrying platform is convex, and the cover part is arranged around the convex part of the carrying platform; the cover part is higher than the convex part of the carrying platform, and the height difference between the cover part and the carrying platform is not more than 5mm; and/or a gap is formed between the inner side surface of the cover part, which is far away from the cover part, and the convex part of the carrying platform, and the gap is communicated with the fourth cooling channel; and/or, the top surface of the cover part is provided with a avoidance groove, the avoidance groove is arranged close to the protruding part of the carrying platform, when the cover part supports the wafer, the wafer can partially shield the avoidance groove, and when the lower shielding piece abuts against the upper shielding piece, the upper shielding piece can also partially shield the avoidance groove.

Further, a sixth cooling channel is provided in the target, and the sixth cooling channel is also used for circulating coolant.

Further, the coolant flowing through the first cooling passage is water; and/or the coolant flowing through the second cooling channel is argon; and/or the coolant flowing through the sixth cooling passage is ultrapure water.

The application provides a magnetron sputtering wafer processing device, which comprises a reaction inner cavity, a carrying platform, a heating mechanism, a first lifting mechanism, a target material, a lower shielding piece and an upper shielding piece, wherein the reaction inner cavity comprises an upper cavity, a lower cavity and a second lifting mechanism, a first cooling channel is arranged in the upper cavity, and a second cooling channel is arranged in the carrying platform; the upper shielding piece and the lower shielding piece are matched, so that metal atoms can be comprehensively prevented from depositing downwards, and the cleaning of the cavity is ensured; by matching the movable upper cavity with the movable lower cavity, even if metal atoms are deposited on the cavity wall, the upper cavity is only required to be treated, so that the method is convenient and quick; the first cooling channel and the second cooling channel are further matched, and the parts which are easy to contact metal atoms and easy to heat can be cooled in a targeted manner, so that the reliable temperature control is performed on the wafer, the wafer is ensured to be maintained at the target set temperature, and the film forming quality, the deposition rate and the sheet resistance uniformity are further ensured.

Drawings

FIG. 1 is a schematic diagram of a magnetron sputtering wafer processing apparatus according to the present application;

FIG. 2 is a cross-sectional view of the magnetron sputtering wafer processing apparatus shown in FIG. 1;

FIG. 3 is a schematic view of the upper chamber, target and upper shield of the magnetron sputtering wafer processing apparatus shown in FIG. 2;

FIG. 4 is a schematic view of the magnetron sputtering wafer processing apparatus shown in FIG. 2, illustrating the structure of the carrier and the lower shield against the upper shield;

FIG. 5 is an exploded view of the carrier and lower shield of the magnetron sputtering wafer processing apparatus of FIG. 1;

FIG. 6 is a cross-sectional view of the carrier and lower shield of FIG. 5;

fig. 7 is an exploded view of the structure of the carrier and lower shield shown in fig. 6.

Detailed Description

In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.

The application provides a magnetron sputtering wafer processing device, which comprises: a reaction chamber 100 for providing space for wafer processing; a stage 200 disposed in the reaction chamber 100; a heating mechanism for heating the carrier 200 so that the carrier 200 heats the wafer by heat transfer; the target 300 is disposed in the reaction chamber 100 and is suspended above the stage 200.

During operation, a wafer to be processed is placed in the reaction cavity 100, the wafer is positioned on the carrying platform 200, the heating mechanism heats the carrying platform 200, and the wafer can be heated by a heat transfer mode after the carrying platform 200 is heated; the target 300 escapes metal atoms under the bombardment of positive ions, the metal atoms move downwards and are deposited on the surface of the wafer, and then the film coating of the wafer can be realized.

In order to avoid metal atoms depositing on the cavity structure outside the wafer, the magnetron sputtering wafer processing device provided by the application further comprises: the first lifting mechanism is used for driving the carrying platform 200 to do lifting motion; a lower shielding member 410 disposed on the carrier 200 for supporting the wafer; the upper shielding member 420 is disposed above the carrier 200, when the carrier 200 is lifted, the lower shielding member 410 can abut against the upper shielding member 420, the middle of the upper shielding member 420 is opened, the wafer can be exposed under the target 300 through the opening of the upper shielding member 420, so that metal atoms are deposited on the surface of the wafer, and the upper shielding member 420 and the lower shielding member 410 are matched to prevent the sputtered metal atoms from polluting the cavity.

Referring specifically to fig. 1 to 4, in the illustrated embodiment, the lower shielding member 410 is provided in an annular cover structure with an open middle, and the lower shielding member 410 can cover the edge and the side of the carrier 200; when the lower shielding member 410 supports the wafer, the wafer can cover the open middle of the lower shielding member 410; as such, the metal atoms deposited downward cannot contact the carrier 200.

It should be noted that the middle portion of the lower shielding member 410 is opened to facilitate the heat transfer of the carrier 200. In other embodiments, the lower covering member 410 may be configured to cover the carrier 200 entirely, or the lower covering member 410 may be configured to have a porous structure, so as to facilitate heat conduction and air conduction. The specific configuration of the lower shield 410 is not limited, as long as the lower shield 410 can contact the upper shield 420 and shield the carrier 200, and functions to fill the gap between the upper shield 420 and the wafer.

Optionally, the wafer is suspended above the carrier 200 while the lower shield 410 supports the wafer.

So that the wafer does not contact the carrier 200, the back of the wafer can be protected. In addition, in the magnetron sputtering process, the reaction gas can circulate between the wafer and the carrier 200, so that the gas pressure environment of the wafer is ensured, and the back surface process of the wafer is protected.

Optionally, the lower shield 410 supports the wafer such that the wafer is suspended above the carrier 200 with a spacing between the wafer and the carrier 200 of no more than 5mm.

Controlling the spacing between the wafer and the carrier 200 is beneficial to ensuring the reliability of the heat transfer of the carrier 200.

In one embodiment, the wafer is suspended 1mm above the carrier 200 while the lower shield 410 supports the wafer.

With continued reference to FIGS. 2 and 3, in the illustrated embodiment, a ring of steps is provided in the reaction chamber 100 upon which the upper shield 420 rests. The middle part of the upper shielding member 420 is also opened, and the inner diameter of the opened middle part of the upper shielding member 420 is larger than the outer diameter of the wafer and smaller than the outer diameter of the lower shielding member 410. The first lifting mechanism can adopt any driving mechanism such as an air cylinder, an electric cylinder and the like. When the carrier 200 is driven by the first lifting mechanism to lift, the lower shielding member 410 can move towards the upper shielding member 420 along with the wafer; the lower shield 410 can rest against and even jack up the upper shield 420, while the wafer can be freely exposed in the open middle of the upper shield 420, subject to size constraints; the target 300 is facing the open center of the upper shield 420, and metal atoms escaping from the target 300 can pass through the open center of the upper shield 420 and deposit on the wafer surface exposed therein.

More specifically, after the carrier 200 lifts the wafer to a predetermined height under the driving of the first lifting mechanism, the wafer approaches the target 300, and the upper shielding member 420 also approaches the target 300 under the support of the lower shielding member 410; the metal atoms escaping through the target 300 mainly fall toward the wafer when deposited downward; metal atoms falling outside the wafer are mainly deposited on the upper shield 420; a very small portion of the metal atoms will fall into the gap between the wafer and the upper shield 420, and as the lower shield 410 fills the gap, this portion of the metal atoms will eventually deposit only on the lower shield 410, thereby avoiding contamination of the chamber with metal atoms.

In summary, the upper shielding member 420 and the lower shielding member 410 cooperate to fully shield the space below the wafer, so as to prevent metal atoms from depositing on the inner wall of the reaction chamber 100 and the carrier 200, thereby ensuring the clean environment in the chamber and further ensuring the accuracy and reliability of the process.

Alternatively, the upper shield 420 and the lower shield 410 are made of stainless steel, which is resistant to high temperatures and corrosion.

Optionally, the surfaces of the upper and lower shutters 420 and 410 are roughened; thus, when the lower shielding member 410 supports the wafer, the wafer is not easy to slip; when the lower shielding member 410 jacks up the upper shielding member 420, the upper shielding member and the lower shielding member are not easy to slip; the stability of the treatment operation is facilitated.

Further, the reaction chamber 100 includes: the upper cavity 110, the target 300 is arranged at the top of the upper cavity 110, and the upper shielding piece 420 is arranged at the bottom of the upper cavity 110; the lower cavity 120, the carrier 200 is arranged in the lower cavity 120 and can move towards the upper cavity 110 under the driving of the first lifting mechanism; the second lifting mechanism 130 is configured to drive the upper cavity 110 and the lower cavity 120 to approach or separate from each other, when the upper cavity 110 and the lower cavity 120 separate from each other, the reaction cavity 100 is opened to facilitate the wafer to enter and exit, and after the upper cavity 110 and the lower cavity 120 approach each other, the reaction cavity 100 is closed to facilitate the wafer to be processed.

Referring specifically to fig. 1 and 2, in the illustrated embodiment, the upper chamber 110 is disposed above the lower chamber 120, the lower end of the upper chamber 110 is open, and the upper end of the lower chamber 120 is open; when the two are propped against each other, the upper cavity 110 is communicated with the lower cavity 120, and the reaction cavity 100 is sealed; when the two are far away from each other, the wafer can enter and exit the reaction chamber 100 through the gap between the two.

The second lifting mechanism 130 may be any driving mechanism such as an air cylinder or an electric cylinder. At least one of the upper cavity 110 and the lower cavity 120 is connected with the second lifting mechanism 130, so that the relative movement of the upper cavity 110 and the lower cavity 120 can be realized, and further, the opening and closing of the reaction cavity 100 can be realized.

With continued reference to fig. 1 and 2, in the illustrated embodiment, the magnetron sputtering wafer treatment apparatus further includes a main chamber 1, and a reaction chamber 100 is disposed in the main chamber 1. The main cavity 1 is used for connecting upstream and downstream equipment, a wafer inlet and a wafer outlet are arranged on the main cavity 1, and the wafer inlet and the wafer outlet are communicated with the transfer channel; typically, the transfer channel is provided with a door structure, and the door is closed during wafer processing to control the air pressure and temperature in the main chamber 1. According to the application, the reaction cavity 100 is further arranged in the main cavity 1, on one hand, the original main cavity 1 structure is not required to be changed, the conventional main cavity 1 is conveniently reserved to be connected with upstream and downstream equipment in a normal butt joint mode, and on the other hand, the reaction cavity 100 can reduce the inner space of the main cavity 1 and more effectively control the air pressure and the temperature in the reaction cavity.

Because the upper shield 420 is disposed in the upper chamber 110, the wafer and the lower shield 410 are also disposed in the upper chamber 110 after the lower shield 410 lifts the upper shield 420; at this time, only a part of the space in the upper chamber 110 serves as an active space for metal atoms, and even if metal atoms fall onto the chamber walls of the reaction chamber 100 due to impact during deposition, only a part of the space in the upper chamber 110 may be contaminated with metal atoms. Because the upper cavity 110 and the lower cavity 120 are arranged in a split manner, when the inner cavity needs to be cleaned, the upper cavity 110 only needs to be cleaned or replaced.

Optionally, a sealing ring is provided between the upper cavity 110 and the lower cavity 120. When the upper cavity 110 and the lower cavity 120 are propped against each other under the driving of the second lifting mechanism 130, the sealing ring between the upper cavity 110 and the lower cavity 120 is pressed and deformed; the sealing ring can well compensate the gap between the upper cavity 110 and the lower cavity 120, thereby ensuring the tightness of the reaction cavity 100 after being sealed.

Optionally, the upper shielding member 420 is fixedly disposed in the upper cavity 110 (such as by screwing or welding, etc. such that the upper shielding member 420 cannot be forced to move in the upper cavity 110), and the lower shielding member 410 is lifted up along with the carrier 200, and finally abuts against the upper shielding member 420, and does not rise any further.

Optionally, the upper shielding member 420 is movably disposed in the upper cavity 110 (e.g. the upper shielding member 420 is slidably disposed in the upper cavity 110 by a limit structure such as a guide rail or a guide slot, or the upper shielding member 420 is hung in the upper cavity 110), and the lower shielding member 410 can jack up the upper shielding member 420 and drive the upper shielding member 420 to move toward the target 300 after the carrier 200 is lifted, so as to finally lift the wafer to a preset position. At this time, the reaction distance between the target 300 and the wafer can be adjusted according to the process or wafer specification, thereby improving the applicability of the apparatus.

Further, the upper cavity 110 is provided with a first cooling channel 111, and the first cooling channel 111 is used for circulating coolant; during magnetron sputtering, the coolant can cool down the upper shield 420 through the first cooling passage 111.

Referring specifically to fig. 2 and 3, in the illustrated embodiment, the wall of the upper cavity 110 is hollow to form a first cooling channel 111. The coolant passing through the first cooling passage 111 can lower the wall temperature of the upper chamber 110, thereby lowering the temperature of the upper shield 420 by means of heat transfer. Of course, it is easy to understand that the lower shield 410 and the wafer are also close to the upper chamber 110 during the magnetron sputtering process, and thus, the wall temperature of the upper chamber 110 is reduced, and the lower shield 410 and the wafer can be cooled.

In other embodiments, the first cooling channel 111 may also be an independent pipe, a chamber, or the like, so that the first cooling channel 111 is closely disposed on the inner wall or the outer wall of the upper cavity 110, and the first cooling channel 111 can also indirectly cool the upper cavity 110.

The coolant may be gas or liquid at normal temperature or low temperature, and at this time, the coolant can rapidly cool the upper cavity 110 through heat exchange. Alternatively, the coolant may be a gas or liquid having a temperature near the set temperature of the wafer processing target; for example, the target temperature of the wafer plating film is 300 ℃, so that the coolant is a gas with a temperature not higher than 300 ℃, and thus the coolant can control the temperature of the upper chamber 110 to about 300 ℃; when the temperature of the shield (upper shield 420 or lower shield 410) or the wafer is higher than 300 ℃, the heat exchange can cool the shield or wafer; when the temperature of the shielding piece or the wafer is lower than 300 ℃, the heat exchange bottom can heat the shielding piece or the wafer; at this time, the coolant can also achieve temperature control and temperature maintenance of the upper shield 420, the lower shield 410, and the wafer.

Alternatively, the coolant flowing through the first cooling passage 111 is water.

The upper cavity 110 can be cooled by directly introducing normal-temperature water; the water may be heated and then introduced into the first cooling channel 111 to ensure that the boiling point of the water is lower than the target set temperature of the wafer, and the water with temperature can equalize the temperature environment in the reaction chamber 100.

Optionally, the inlet and outlet of the first cooling channel 111 are both disposed at the top of the upper cavity 110.

For example, in the embodiment shown in fig. 2 and 3, the upper cavity 110 is substantially cylindrical, and the top of the upper cavity 110 is provided with a hanging wall 113 extending outwards; the wall of the upper cavity 110 is hollow and forms a first cooling channel 111; the left end of the wall 113 is provided with a coolant inlet of the first cooling channel 111, and the right end is provided with a coolant outlet of the first cooling channel 111. The coolant flowing through the first cooling passage 111 is water, and after the water flows into the first cooling passage 111 from the inlet, the first cooling passage 111 is filled and finally discharged through the outlet. Ensuring that the coolant has a circulating state, the coolant can flow through the first cooling passage 111 well to perform a heat exchange function.

Optionally, the first cooling channel 111 is arranged in a spiral shape and extends longitudinally around the upper cavity 110. The spiral structure can not only limit the flowing direction of the coolant and ensure that the coolant flows through the first cooling channel 111 completely to realize flowing, but also cover the upper cavity 110 completely and ensure the cooling effect on the upper cavity 110.

Further, the stage 200 is provided with a second cooling channel 201, and the second cooling channel 201 is also used for circulating coolant; during magnetron sputtering, the coolant can cool down the lower shield 410 through the second cooling passage 201.

Referring specifically to fig. 2 and 4, in the illustrated embodiment, the second cooling channel 201 includes: a longitudinal passage extending longitudinally to the outside of the stage 200 to communicate with a coolant supply device disposed outside the chamber; and one end of the transverse channel is communicated with the longitudinal channel, and the other end of the transverse channel penetrates through the table top of the carrying platform 200. After entering the transverse channels along the longitudinal channels, the coolant can be blown through the transverse channels toward the lower shield 410, thereby cooling the lower shield 410. Of course, it is readily understood that the lower shield 410 contacts the wafer and the upper shield 420, and therefore, as the lower shield 410 cools, the wafer and the upper shield 420 can also cool by heat exchange.

It should be added that when the lower shielding member 410 is in sealing connection with the second cooling channel 201 and the coolant does not contact the wafer, the coolant may be gas or liquid; at this time, the second cooling passage 201 includes an inlet passage and an outlet passage, and the coolant is discharged through the outlet passage after acting on the lower shield 410 through the inlet passage, thereby achieving circulation. When the lower shielding member 410 is not completely sealed with the second cooling channel 201, the coolant preferably uses an inert gas, which does not interfere with the wafer reaction, but can also control the pressure in the chamber as a reaction gas.

Optionally, the coolant flowing through the second cooling channel 201 is argon.

Argon is inert gas, so that the process structure of the wafer is not damaged when the wafer is blown, and the pressure in the cavity can be stabilized and the film coating of the wafer is promoted.

Optionally, a cooling medium circulation groove is disposed on the table surface of the carrier 200 for contacting the lower shielding member 410, and the second cooling channel 201 is communicated with the cooling medium circulation groove; after the coolant enters the coolant circulation groove, the coolant can act on the lower shield 410 along the coolant circulation groove.

The coolant circulation grooves may be formed in any shape such as radial shape and spiral shape, so that the carrier 200 is used for contacting the surface of the lower shielding member 410 to densely distribute the coolant circulation grooves, which can increase the contact area between the coolant and the lower shielding member 410, thereby ensuring that the coolant acts on the lower shielding member 410 comprehensively and further achieving a better cooling effect.

In summary, by matching the upper shielding member 420 and the lower shielding member 410, metal atoms can be completely prevented from depositing downwards, and cleaning in the cavity is ensured; by matching the movable upper cavity 110 with the movable lower cavity 120, even if metal atoms are deposited on the cavity wall, the upper cavity 110 is only required to be treated, so that the method is convenient and quick; further cooperate first cooling channel 111 and second cooling channel 201, can pertinently cool down to the easy contact metal atom, the easy position that heaies up to carry out reliable control by temperature to the wafer, ensure that the wafer maintains at the target settlement temperature, and then guarantee film formation quality, deposition rate and sheet resistance homogeneity.

Optionally, a first step 114 is provided on top of the upper cavity 110, and the first step 114 is used for limiting the target 300.

Referring specifically to fig. 2 and 3, in the illustrated embodiment, the upper chamber 110 is generally cylindrical, with a central portion open as a chamber; the top of the cylinder wall 112 of the upper cavity 110 is provided with a wall 113 which extends outwards and is used for connecting the main cavity 1, and the top end of the wall 113 is provided with a first step 114.

The target 300 includes: a back plate part for connecting the main cavity 1; a panel portion facing the reaction chamber 100 for providing metal atoms. In the embodiment shown in fig. 2 and 3, the outer diameter of the panel portion is smaller than the inner diameter of the annular first step 114; when the target 300 is mounted, the first step 114 can support the back plate portion, and the face plate portion can be inserted into the inner ring of the first step 114, so that the first step 114 can define the mounting position of the target 300 and ensure that the face plate portion faces the wafer.

Optionally, the bottom of the upper cavity 110 is provided with a second step 116, the bottom surface of the upper shielding member 420 is provided with a clamping groove, and when the upper cavity 110 supports the upper shielding member 420, the second step 116 is inserted into the clamping groove.

Referring specifically to fig. 2 and 3, in the illustrated embodiment, a bottom portion of a cylinder wall 112 of the upper chamber 110 is provided with an inwardly extending sealing wall 115, and the sealing wall 115 is configured to abut against the lower chamber 120; a second step 116 extending upwards is arranged on one side of the sealing wall 115 away from the cylinder wall 112, and the cylinder wall 112, the sealing wall 115 and the second step 116 are integrally hooked; the interior of cylinder wall 112, wall 113, sealing wall 115 and second step 116 is hollow, forming first cooling channel 111.

With continued reference to fig. 2 and 3, two clamping blocks are disposed on the bottom surface of the upper shielding member 420, and the two clamping blocks are disposed in concentric circles, and a clamping groove is formed between the two clamping blocks; the upper shield 420 can rest on the second step 116 through a clamping groove; the clamping groove and the second step 116 are mutually limited, so that the upper cavity 110 can be used for supporting the upper shielding member 420 and limiting the installation position of the upper shielding member 420 in the upper cavity 110, the contact area between the upper cavity 110 and the upper shielding member 420 can be increased, the upper shielding member 420 can be influenced by the cooling of the first cooling channel 111 to the upper cavity 110, and the movement direction of the upper shielding member 420 can be limited and the movement uniformity and reliability of the upper shielding member 420 can be improved when the lower shielding member 410 jacks up the upper shielding member 420.

Optionally, a third cooling channel 121 is disposed in the lower cavity 120, and the third cooling channel 121 is also used for circulating coolant.

Referring specifically to fig. 2, in the illustrated embodiment, the wall of the lower cavity 120 is hollow to serve as the third cooling passage 121. In the magnetron sputtering process, the upper cavity 110 is in sealing connection with the lower cavity 120, the first cooling channel 111 is propped against the third cooling channel 121, and the coolant cools the upper cavity 110 and the lower cavity 120, so that the internal temperature of the cavities can be well stabilized, and the upper and lower temperature differences of the cavities are avoided. Meanwhile, the temperature of the cavity wall comprehensively radiates the inner radiation, and the wafer temperature can be balanced, so that the wafer temperature is prevented from being far higher than the target set temperature.

Alternatively, the coolant flowing through the third cooling passage 121 is water.

At this time, the first cooling passage 111 and the third cooling passage 121 may be simultaneously supplied with coolant by the same coolant supply apparatus.

Optionally, the inlet of the third cooling channel 121 is arranged at the bottom and the outlet is arranged at the top.

For example, in the embodiment shown in fig. 2, the wall of the lower cavity 120 is hollow, serving as the third cooling passage 121; the inlet of the third cooling passage 121 is disposed at the left bottom of the lower cavity 120, and the outlet is disposed at the right top of the lower cavity 120; thus, after the coolant enters the third cooling passage 121, the third cooling passage 121 needs to be filled first, so that the coolant can flow through the third cooling passage.

Optionally, the third cooling channel 121 is arranged in a spiral shape and extends longitudinally around the lower cavity 120. The spiral structure can limit the flowing direction of the coolant, ensure that the coolant flows through the third cooling channel 121 comprehensively to realize flowing, and can cover the lower cavity 120 comprehensively and ensure the cooling effect on the lower cavity 120.

Optionally, the magnetron sputtering wafer processing device further includes a main chamber 1, the upper chamber 110 is fixedly disposed on the upper portion of the main chamber 1, the lower chamber 120 is movably disposed on the lower portion of the main chamber 1 through an elastic bellows 2, and the second lifting mechanism 130 is used for driving the lower chamber 120 to perform lifting motion.

Referring specifically to fig. 2, in the illustrated embodiment, the bottom of the lower chamber 120 is connected to the elastic bellows 2; the upper end of the elastic corrugated pipe 2 is connected with the lower cavity 120, and the lower end is connected with the bottom wall of the main cavity 1; the lower chamber 120 communicates with the flexible bellows 2, forming a lower chamber therebetween. When the second lifting mechanism 130 drives the lower cavity 120 to descend, the elastic bellows 2 is compressed; when the second lifting mechanism 130 drives the lower cavity 120 to lift, the elastic corrugated tube 2 is restored; the elastic bellows 2 can not only adapt to the lifting movement of the lower cavity 120 to meet the opening and closing requirements of the reaction cavity 100, but also can be used as a lower cavity and ensure the sealing performance of the cavity.

Optionally, the thickness of the wall of the inner ring of the upper shade 420 that is used to contact the lower shade 410 tapers, the closer to the center, the smaller the thickness of the wall of the inner ring of the upper shade 420.

Referring specifically to fig. 3, in the illustrated embodiment, the main body of the upper shielding member 420 is configured in a ring shape, and two clamping blocks are disposed on the bottom surface of the upper shielding member 420; the inward part of the clamping block is the inner ring of the upper shielding piece 420; the upper shielding member 420 where the inner ring is located has an inclined surface, and the more inward the upper shielding member is, the lower the upper surface is inclined, so that the inner ring is wedge-shaped. When the upper shielding member 420 abuts against the lower shielding member 410, the thickness of the corner position of the contact part between the upper shielding member 420 and the lower shielding member 410 is very small, and metal atoms are not easy to deposit at the corner to cause accumulation, so that the upper shielding member 420 and the lower shielding member 410 are not easy to adhere.

Optionally, the lower shade 410 includes: a cover 411 for supporting the wafer, the cover 411 facing the table top of the carrier 200 when the lower shield 410 is covered on the carrier 200; a cover portion 412, wherein the cover portion 412 faces a side surface of the stage 200 when the lower cover 410 is covered on the stage 200; when the lower shielding member 410 is covered on the carrier 200, a fourth cooling channel 413 is provided between the cover 411 and the table surface of the carrier 200, and the fourth cooling channel 413 is communicated with the second cooling channel 201.

In one embodiment, a recess is formed on the table surface of the carrier 200, and after the cover 411 abuts against the table surface, the recess forms a fourth cooling channel 413.

In another embodiment, a groove is formed on the bottom surface of the cover 411, and after the cover 411 abuts against the table top, the groove forms a fourth cooling channel 413.

In yet another embodiment, a channel is provided in the wall of the cover 411, one end of which extends through the bottom surface of the cover and communicates with the second cooling channel 201, i.e. the fourth cooling channel 413.

The present application is not limited to the specific configuration of the fourth cooling passage 413.

In an embodiment, referring to fig. 5 to 7, in the illustrated embodiment, the lower shielding member 410 is in a shape of a ring cover with an open middle, the cover 411 is used for contacting the table top of the carrier 200, and the cover 411 can support a wafer and can prevent metal atoms from depositing on the table top of the carrier 200; the outer periphery of the cover 411 is provided with a cover portion 412 extending downward, and the cover portion 412 is used to tightly fit with the side surface of the carrier 200 so as to achieve fastening connection of the lower cover 410 and the carrier 200, and the cover portion 412 can further protect the side surface of the carrier 200.

With continued reference to fig. 6 and 7, in the illustrated embodiment, the cover 411 is generally laterally S-shaped, with the cover 411 including three vertically extending faces, an outer face, an inner face, and a separation face therebetween, respectively; the outer side surface is connected with the cover part 412; the outer side surface is connected with the top of the separation surface, and the inner side surface is connected with the bottom of the separation surface. At this time, a convex groove is formed between the outer side surface and the partition surface, and the groove serves as the fourth cooling passage 413. The fourth cooling passage 413 is an annular passage, looped around the edge of the cover 411. The top end of the second cooling channel 201 penetrates through the table surface of the carrier 200, the top end of the second cooling channel 201 is communicated with the fourth cooling channel 413, and the coolant can enter the fourth cooling channel 413 through the second cooling channel 201, and then acts on the lower shielding member 410 comprehensively along the annular fourth cooling channel 413.

Optionally, the second cooling channel 201 is directly connected to the fourth cooling channel 413.

At this time, the outlet of the second cooling passage 201 penetrating the stage 200 is opposite to the fourth cooling passage 413.

Optionally, a communication channel 416 is provided in a bottom wall of the lid 411 for contacting the table top of the stage 200, and the communication channel 416 communicates with the second cooling channel 201 and the fourth cooling channel 413.

For example, in the embodiment shown in fig. 5 to 7, the cover 411 has a substantially transverse S-shape, and the wall between the inner side surface and the partition surface is the bottom wall of the cover 411 for contacting the table top of the stage 200. At this time, the bottom surface of the bottom wall is provided with a groove communicating with the fourth cooling passage 413, i.e., a communication passage 416; when the lower shielding member 410 is covered on the carrier 200, the communication channel 416 is opposite to the outlet of the second cooling channel 201; the coolant flowing through the second cooling passage 201 can enter the fourth cooling passage 413 through the communication passage 416.

Optionally, the second cooling channel 201 comprises a longitudinal channel and a transverse channel; the second cooling channel 201 includes a plurality of lateral channels arranged radially; the cover 411 is provided with a plurality of communication passages 416 in a bottom wall for contacting the table surface of the stage 200, and one end of any communication passage 416 communicates with one lateral passage and the other end communicates with a fourth cooling passage 413. At this time, the second cooling passage 201 can supply the coolant to the fourth cooling passage 413 at multiple points; in this way, the coolant flow can be enhanced and the coolant can be promoted to cool the lower shield 410.

Alternatively, the cover 411 is provided with a connection hole; the upper shielding member 420 is provided with a fifth cooling passage 421 therein; when the lower shield 410 abuts against the upper shield 420, the connection hole communicates with the fifth cooling passage 421, and the coolant flowing in through the second cooling passage 201 can enter the fifth cooling passage 421 through the fourth cooling passage 413 and the connection hole.

Referring specifically to fig. 3, in the illustrated embodiment, the cover 411 has a substantially transverse S-shape, and an upwardly protruding groove, that is, a fourth cooling passage 413, is formed between the outer side surface of the cover 411 and the partition surface. The outlet of the second cooling channel 201 penetrates through the table surface of the carrier 200 and is communicated with the fourth cooling channel 413; the top of the fourth cooling passage 413 is provided with a connecting hole; the bottom surface of the upper shielding piece 420 is provided with a circle of grooves; when the upper shielding member 420 abuts against the lower shielding member 410, the bottom surface of the upper shielding member 420 is attached to the top surface of the fourth cooling channel 413, and the groove on the bottom surface of the upper shielding member 420 forms a fifth cooling channel 421; the fourth cooling passage 413 communicates with the fifth cooling passage 421 through a connection hole at the top thereof. Thus, the coolant can enter the fifth cooling passage 421 through the fourth cooling passage 413, and further directly act on the upper shield 420 to cause the upper shield 420 to cool.

In other embodiments, the fifth cooling channel 421 may be disposed within the wall of the upper shield 420; alternatively, a plurality of fifth cooling channels 421 may be disposed in the upper shield 420, and the plurality of fifth cooling channels 421 may be disposed radially or spirally so as to increase the contact area of the coolant with the upper shield 420.

The present application is not limited to the specific configuration of the connection hole and the fifth cooling passage 421.

Optionally, an elastic member 414 is disposed between the cover portion 412 and a side surface of the carrier 200, and when the lower cover member 410 is covered on the carrier 200, the elastic member 414 is compressed and can reversely abut against the carrier 200.

The elastic member 414 may be an elastic structure such as a spring or a spring plate, or may be made of an elastic material such as rubber or plastic. The elastic member 414 has the characteristics of being deformed and recovered by force. When the lower shielding member 410 is mounted, the cover portion 412 is sleeved on the side surface of the carrier 200, so that the elastic member 414 is compressed, the elastic member 414 has a tendency to recover, and the elastic force of the elastic member can reversely abut against the carrier 200, so that the connection force between the lower shielding member 410 and the carrier 200 is increased, and the mounting stability of the lower shielding member 410 and the carrier 200 is ensured.

In the magnetron sputtering process, the carrier 200 is heated to raise the temperature, and the lower shielding member 410 is affected by both the temperature raising of the carrier 200 and the temperature lowering of the coolant. Due to the temperature change, the material may be deformed due to the characteristics of thermal expansion and contraction, and when the elastic member 414 is added and the lower shielding member 410 or the carrier 200 is deformed, the elastic member 414 can be compressed or stretched adaptively, so as to ensure that the lower shielding member 410 and the carrier 200 are abutted against each other.

Optionally, a plurality of elastic members 414 are disposed between the cover 412 and the side surface of the carrier 200, and the plurality of elastic members 414 are disposed at intervals along the outer peripheral surface of the carrier 200. At this time, there is a gap between the adjacent elastic members 414, so that the gap communicates with the fourth cooling passage 413, and the coolant that has entered the fourth cooling passage 413 can be discharged through the gap. When the coolant flowing through the second cooling channel 201 is an inert gas, the gas flows into the reaction chamber 100 through the gap between the cover portion 412 and the carrier 200, and can also be used as a reaction gas for increasing the pressure in the chamber and promoting the wafer reaction.

Alternatively, the middle portion of the stage 200 is convex, and the cover 411 is disposed around the convex portion of the stage 200.

Referring specifically to fig. 5 and 7, in the illustrated embodiment, the table surface of the carrier 200 is generally convex, and a raised circular table with a smaller outer diameter is provided in the middle of the carrier 200. The cover 411 has a substantially horizontal S-shape, and an outer surface of the cover 411 is connected to the cover 412, and an inner surface of the cover is annular around a circular truncated cone in the middle of the stage 200.

At this time, the cover 411 has a certain height so as to arrange a passage through which the coolant flows; the carrier 200 is adapted to the height of the cover 411, and when the cover 411 supports the wafer, the cover can approach the wafer, so that the excessive interval between the table top of the carrier 200 and the wafer is avoided, and the heat transfer is prevented from being influenced.

Alternatively, the cover 411 is higher than the boss of the stage 200, and the difference in height therebetween is not more than 5mm.

So that the cover 411 is slightly higher than the protruding portion of the carrier 200, and when the cover 411 supports the wafer, the back surface of the wafer does not contact the carrier 200, thereby protecting the wafer. The distance between the wafer and the table top of the carrier 200 is controlled, and the heat transfer effect of the carrier 200 on the wafer can be ensured.

In one embodiment, the height difference between the lid 411 and the boss of the stage 200 is 1mm, and the back surface of the wafer is 1mm from the boss of the stage 200 when the lid 411 supports the wafer. At this distance, the stage 200 has a good heat transfer effect on the wafer.

Alternatively, a space is provided between the inner side surface of the cover portion 411 away from the cover portion 412 and the convex portion of the stage 200, and the space communicates with the fourth cooling passage 413.

Referring specifically to fig. 6, in the illustrated embodiment, the outer side surface of the cover 411 is used to connect to the cover 412, and the inner side surface of the cover 411 faces the protruding portion of the carrier 200 and is higher than the protruding portion of the carrier 200, so as to support the wafer. The inner side surface of the cover 411 is annularly arranged to be cylindrical, the inner diameter of the inner side surface of the cover 411 is larger than the outer diameter of the protruding part of the carrier 200, when the lower shielding piece 410 is covered on the carrier 200, the protruding part of the carrier 200 is inserted into a channel formed by the surrounding of the inner side surface of the cover 411, and a space is reserved between the inner side surface of the cover 411 and the protruding part of the carrier 200; so that the space between the inner side surface of the cover 411 and the boss of the stage 200 communicates with the fourth cooling passage 413, the coolant can also flow into the space and act on the wafer through the space. The coolant is inert gas, and the inert gas blows the back surface of the wafer through the interval, so that the wafer can be pressurized and the back surface process of the wafer can be protected.

More specifically, in the embodiment shown in fig. 6 and 7, the cover 411 has a laterally inverted S-shape, and the cover 411 includes three vertically extending faces, an outer side face, an inner side face, and a partition face between the outer side face and the inner side face, respectively; a convex groove communicated with the table top of the carrier 200 is formed between the separation surface and the outer side surface, and the groove is a fourth cooling channel 413; a bottom wall contacting the table top of the carrier 200 is arranged between the separation surface and the inner side surface, the bottom wall is used for supporting the lower shielding piece 410 on the carrier 200, a communication channel 416 is arranged on the bottom surface of the bottom wall contacting the table top of the carrier 200, the middle part of the communication channel 416 is communicated with the second cooling channel 201, one end of the communication channel is communicated with the fourth cooling channel 413, and the other end of the communication channel is communicated with the interval between the inner side surface of the cover 411 and the protruding part of the carrier 200.

Further, in the embodiment shown in fig. 6 and 7, the coolant is input into the communication passage 416 through the second cooling passage 201, and through the communication passage 416, the coolant can enter the fourth cooling passage 413, act on the lower shield 410, enter the space between the inner side surface of the cover 411 and the convex portion of the stage 200, act on the back surface of the wafer, and can be discharged from the space between the cover 412 and the side surface of the stage 200 after passing through the fourth cooling passage 413.

Optionally, the top surface of the cover 411 is provided with a avoidance groove 415, the avoidance groove 415 is adjacent to a protruding portion of the carrier 200, when the cover 411 supports the wafer, the wafer can partially shield the avoidance groove 415, and when the lower shielding member 410 abuts against the upper shielding member 420, the upper shielding member 420 can also partially shield the avoidance groove 415.

Referring specifically to fig. 4, 6 and 7, in the illustrated embodiment, the cover 411 has a transverse S shape, and the cover 411 includes three vertically extending surfaces, namely an outer surface, an inner surface, and a separation surface between the outer surface and the inner surface, where the outer surface is connected to a top of the separation surface, and the inner surface is connected to a bottom of the separation surface. A downward convex, upper open, clearance groove 415 is formed between the inner side and the partition. When the wafer is supported, only the top wall of the inner side surface of the cover 411 is in contact with the back surface of the wafer, and at this time, the contact area of the back surface of the wafer by the external structure is extremely small, so that the damage of the process of the back surface of the wafer can be avoided to a great extent, and the adhesion of the wafer and the cover 411 can be avoided.

More specifically, the outer diameter of the wafer is larger than the inner diameter of the channel formed by the inner side surface of the cover 411, so that when the cover 411 supports the wafer, the edge of the wafer falls over the clearance groove 415, thereby partially shielding the clearance groove 415. During the magnetron sputtering process, when the lower shielding member 410 abuts against the upper shielding member 420, the wafer can shield part of the avoidance groove 415 from inside to outside; while the upper shield 420 can shield a portion of the keep-out recess 415 from outside to inside. Thus, only the very small avoidance groove 415 is exposed between the upper shielding member 420 and the wafer, and when metal atoms enter the exposed part and deposit downwards, the metal atoms can be deposited in the avoidance groove 415, the avoidance groove 415 has a certain space, and when the metal atoms deposit in the avoidance groove 415, the deposited pollution can not interfere with the processing operation of the wafer.

Optionally, a sixth cooling channel 301 is provided in the target 300, and the sixth cooling channel 301 is also used for circulating coolant.

It is easy to understand that, during the magnetron sputtering process, the target 300 is bombarded by positive ions and escapes metal atoms, and at this time, the target 300 is rapidly heated, so that the escaped metal atoms have high temperature. Therefore, the sixth cooling channel 301 is disposed in the target 300, and the coolant flows through the sixth cooling channel 301 to directly cool the target 300, so as to better control the operation temperature and ensure that the wafer is processed at the target preset temperature.

In one embodiment, the target 300 includes: a back plate part for connecting the main cavity 1; a panel portion facing the reaction chamber 100 for providing metal atoms. The back plate portion and the face plate portion are both made of aluminum material, and the sixth cooling passage 301 is provided therebetween. The back plate portion and the panel are made of the same material, so that the target 300 can be integrally formed.

Alternatively, the coolant flowing through the sixth cooling passage 301 is ultrapure water.

The ultra-pure water has an insulating effect, and when acting on the energized target 300, the flowing ultra-pure water can not only play a role in heat exchange and cooling, but also ensure the use safety of the equipment.

The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. A magnetron sputtering wafer processing apparatus, comprising:

A reaction chamber (100) for providing space for wafer processing;

A stage (200) provided in the reaction chamber (100);

the heating mechanism is used for heating the carrying platform (200) so as to facilitate the carrying platform (200) to heat the wafer in a heat transfer mode;

The first lifting mechanism is used for driving the carrying platform (200) to do lifting motion;

A target (300) which is arranged in the reaction cavity (100) and is suspended above the carrying platform (200);

a lower shield (410) disposed on the carrier (200) for supporting a wafer;

The upper shielding piece (420) is arranged above the carrying platform (200), when the carrying platform (200) ascends, the lower shielding piece (410) can be abutted against the upper shielding piece (420), the middle part of the upper shielding piece (420) is open, a wafer can be exposed under the target (300) through the open part of the upper shielding piece (420) so that metal atoms are deposited on the surface of the wafer, and the upper shielding piece (420) and the lower shielding piece (410) are matched to prevent the metal atoms from polluting a cavity;

Wherein the reaction lumen (100) comprises:

The target material (300) is arranged at the top of the upper cavity (110), and the upper shielding piece (420) is arranged at the bottom of the upper cavity (110);

The carrier (200) is arranged in the lower cavity (120) and can move towards the upper cavity (110) under the driving of the first lifting mechanism;

the second lifting mechanism (130) is used for driving the upper cavity (110) and the lower cavity (120) to be close to or far away from each other, when the upper cavity (110) and the lower cavity (120) are far away from each other, the reaction cavity (100) is opened so as to be convenient for a wafer to enter and exit, and after the upper cavity (110) and the lower cavity (120) are close to each other, the reaction cavity (100) is closed so as to be convenient for the wafer to be processed;

a first cooling channel (111) is arranged in the upper cavity (110), and the first cooling channel (111) is used for circulating a coolant;

A second cooling channel (201) is arranged in the carrying platform (200), and the second cooling channel (201) is also used for circulating a coolant;

in the magnetron sputtering process, the cooling agent can cool the upper shielding member (420) through the first cooling channel (111), and the cooling agent can cool the lower shielding member (410) through the second cooling channel (201).

2. The magnetron sputtering wafer processing device according to claim 1, wherein a first step (114) is provided at the top of the upper chamber (110), and the first step (114) is used for limiting the target (300);

And/or, a second step (116) is arranged at the bottom of the upper cavity (110), a clamping groove is formed in the bottom surface of the upper shielding piece (420), and when the upper cavity (110) supports the upper shielding piece (420), the second step (116) is inserted into the clamping groove.

3. The magnetron sputtering wafer processing apparatus according to claim 1, wherein a third cooling channel (121) is provided in the lower chamber (120), the third cooling channel (121) being also used for circulating a coolant;

and/or, the magnetron sputtering wafer processing device further comprises a main cavity (1), the upper cavity (110) is fixedly arranged on the upper portion of the main cavity (1), the lower cavity (120) is movably arranged on the lower portion of the main cavity (1) through an elastic corrugated pipe (2), and the second lifting mechanism (130) is used for driving the lower cavity (120) to do lifting motion.

4. The magnetron sputtering wafer processing apparatus of claim 1 wherein the thickness of the wall of the inner ring of the upper shield (420) for contacting the lower shield (410) tapers, the closer to the center, the smaller the thickness of the wall of the inner ring of the upper shield (420).

5. The magnetron sputtering wafer processing apparatus of claim 1 wherein the lower shield (410) comprises:

A cover part (411) for supporting a wafer, wherein when the lower shielding member (410) is covered on the carrying platform (200), the cover part (411) faces the table surface of the carrying platform (200);

A cover part (412), wherein when the lower shielding member (410) is covered on the carrying platform (200), the cover part (412) faces the side surface of the carrying platform (200);

When the lower shielding member (410) is covered on the carrying platform (200), a fourth cooling channel (413) is arranged between the cover part (411) and the table top of the carrying platform (200), and the fourth cooling channel (413) is communicated with the second cooling channel (201).

6. The magnetron sputtering wafer processing apparatus according to claim 5, wherein the lid portion (411) is provided with a connection hole;

A fifth cooling channel (421) is arranged in the upper shielding piece (420);

When the lower shielding member (410) abuts against the upper shielding member (420), the connection hole communicates with the fifth cooling passage (421), and the coolant flowing in through the second cooling passage (201) can pass through the fourth cooling passage (413) and the connection hole to enter the fifth cooling passage (421).

7. The magnetron sputtering wafer processing apparatus according to claim 5, wherein an elastic member (414) is provided between the cover portion (412) and a side surface of the carrier (200), and the elastic member (414) is compressed and can reversely abut against the carrier (200) when the lower cover member (410) is covered on the carrier (200).

8. The magnetron sputtering wafer processing apparatus according to claim 5, wherein the central portion of the stage (200) is convex, and the lid portion (411) is disposed around the convex portion of the stage (200);

The cover part (411) is higher than the protruding part of the carrying platform (200), and the height difference between the cover part and the protruding part is not more than 5mm; and/or, a space is arranged between the inner side surface of the cover part (411) away from the cover part (412) and the protruding part of the carrying platform (200), and the space is communicated with the fourth cooling channel (413); and/or, the top surface of the cover part (411) is provided with a position avoidance groove (415), the position avoidance groove (415) is adjacent to a protruding part of the carrying platform (200), when the cover part (411) supports a wafer, the wafer can partially shield the position avoidance groove (415), and when the lower shielding part (410) abuts against the upper shielding part (420), the upper shielding part (420) can also partially shield the position avoidance groove (415).

9. Magnetron sputtering wafer processing apparatus according to any of claims 1-8, wherein a sixth cooling channel (301) is provided in the target (300), the sixth cooling channel (301) also being adapted for coolant circulation.

10. The magnetron sputtering wafer processing apparatus according to claim 9, wherein the coolant flowing through the first cooling passage (111) is water;

and/or the coolant flowing through the second cooling channel (201) is argon;

And/or the coolant flowing through the sixth cooling passage (301) is ultrapure water.