CN118019421A - Trans perovskite solar cell, preparation method thereof and photovoltaic device - Google Patents
Trans perovskite solar cell, preparation method thereof and photovoltaic device Download PDFInfo
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a trans-perovskite solar cell, a preparation method thereof and a photovoltaic device. The preparation method comprises the following steps: dissolving a hole transport material in a perovskite precursor solution, wherein the hole transport material comprises one or more of an organic hole transport material, an inorganic hole transport material and a self-assembled monolayer material; dissolving a passivating agent in an antisolvent; the perovskite precursor solution is spin-coated and annealed to prepare the perovskite light-absorbing layer, the hole transport material is buried in the bottom in the spin-coating and annealing process, and the passivating agent is introduced into the bulk phase and the interface of the perovskite light-absorbing layer in the process of adding the anti-solvent in a dropwise manner, so that defects at the bulk phase and the interface of the perovskite light-absorbing layer are cooperatively passivated. The invention can improve the wettability of the perovskite substrate, allocate the energy level of the perovskite solar cell, reduce the defects of perovskite phase and surface interface, reduce the non-radiative recombination of carriers in the perovskite cell, and improve the photoelectric performance and stability of the cell.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a trans-perovskite solar cell, a preparation method and a photovoltaic device.
Background
Solar energy is receiving wide attention in academia and industry as a clean renewable energy source. Currently, perovskite Solar Cells (PSC) are attracting attention in third generation solar cells due to their excellent photoelectric properties, high photoelectric conversion efficiency, low manufacturing cost, simple process, and the like. Currently, the structure of formal and trans perovskite solar cells is mainly composed of an Electron Transport Layer (ETL), a perovskite light absorbing layer, a Hole Transport Layer (HTL) and a metal electrode. However, perovskite light absorbing layers have poor efficiency and stability under the long term effects of water, oxygen, light and heat, which also results in reduced service life of perovskite solar cells, severely affecting commercial applications of the cells. In addition, the presence of HTL has a plurality of effects on the performance and preparation process of the cell, such as loss of open circuit voltage caused by poor energy matching, poor wettability, large-area preparation and nucleation growth of perovskite thin film, etc., which directly affect the final photoelectric performance of perovskite solar cell.
Disclosure of Invention
Based on this, it is necessary to provide a method for preparing a trans perovskite solar cell. The preparation method of the trans-perovskite solar cell has the advantages of simpler process, good passivation effect and high production efficiency, and the perovskite light absorption layer of the prepared perovskite solar cell is stable and high, and the cell performance is stable and the cell efficiency is high.
An embodiment of the application provides a preparation method of a trans-perovskite solar cell.
A method for preparing a trans perovskite solar cell, comprising the following steps:
dissolving a hole transport material in a perovskite precursor solution, wherein the hole transport material comprises one or more of an organic hole transport material, an inorganic hole transport material and a self-assembled monolayer material SAM; dissolving a passivating agent in an antisolvent;
and spin-coating and annealing the perovskite precursor solution to prepare a perovskite light-absorbing layer, burying a hole-transporting material in the spin-coating and annealing process, introducing the passivating agent into the bulk phase and the interface of the perovskite light-absorbing layer in the process of dripping an antisolvent to form a passivation layer, thereby cooperatively passivating defects at the bulk phase and the interface of the perovskite light-absorbing layer.
In some of these embodiments, the passivating agent comprises one or more of an alkali halide, an organic molecule, an organic halide salt, a polymer, and a metal halide;
and/or the antisolvent comprises at least one of chlorobenzene, ethyl acetate, anisole, diethyl ether, isopropanol, ethanol.
In some of these embodiments, the hole transport material is a self-assembled monolayer material (SAM);
and/or the passivating agent is one or two of organic molecules and organic halide salts.
In some embodiments, the perovskite light absorbing layer has a structural formula ABX 3, wherein a is one or more of methylamine, formamidine, acetamidine, cesium, or rubidium; b is one or more of lead, tin, copper and germanium; x is one or more of F -、I-、Br-、Cl-、BF4 -、PF6 - and SCN -.
In some of these embodiments, the concentration of the hole transporting material in the perovskite precursor solution ranges from 0.1mg/mL to 20mg/mL.
In some of these embodiments, the concentration of the passivating agent in the anti-solvent ranges from 0.01mg/mL to 30mg/mL.
In some embodiments, the annealing treatment comprises a one-step annealing or a two-step annealing, wherein the temperature of the one-step annealing is in the range of 60 ℃ to 180 ℃ and the annealing time is in the range of 1min to 80min; the two-step annealing is to anneal for 1min to 30min at the temperature ranging from 50 ℃ to 100 ℃ and then to anneal for 1min to 60min at the temperature ranging from 80 ℃ to 180 ℃.
The embodiment of the application also provides a trans-perovskite solar cell.
The trans-perovskite solar cell is prepared by the preparation method and comprises a transparent conductive substrate, a first functional layer, a perovskite light absorption layer, a passivation layer, a second functional layer, a barrier layer and a metal electrode which are sequentially laminated and distributed.
In some embodiments, the first functional layer and the second functional layer are hole transport layers and electron transport layers respectively;
and/or the transparent conductive substrate comprises a flexible substrate or a rigid substrate, wherein the rigid substrate comprises ITO transparent conductive glass and FTO transparent conductive glass;
And/or a decorative layer and/or a buffer layer are/is arranged between the barrier layer and the metal electrode.
The embodiment of the application also provides a photovoltaic device.
A photovoltaic device comprises a packaging structure and a trans-perovskite solar cell prepared by the preparation method.
The preparation method of the trans-perovskite solar cell can improve wettability of a perovskite substrate, allocate energy level of the perovskite solar cell, reduce defects of perovskite phase and surface interface, further reduce non-radiative recombination of carriers in the perovskite cell, and improve photoelectric performance and stability of the cell. Specifically, the preparation method of the trans-perovskite solar cell adopts a hole transport material such as a self-assembled monolayer material (SAM) to dope perovskite to form a buried interface, and combines an anti-solvent method to passivate perovskite defects, in the process of spin coating and annealing treatment, the hole transport material is automatically buried at the interface to form a hole transport layer, and meanwhile, the passivating agent in the anti-solvent can also passivate and modify the perovskite light absorption layer, so that the efficiency and stability of the cell are improved, and the method has important significance in the aspect of perovskite defect passivation.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is evident that the figures in the following description are only some embodiments of the application, from which other figures can be obtained without inventive effort for a person skilled in the art.
For a more complete understanding of the present application and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings. Wherein like reference numerals refer to like parts throughout the following description.
Fig. 1 is a schematic diagram of a trans-perovskite solar cell according to an embodiment of the invention.
Description of the reference numerals
10. Perovskite solar cell; 100. a transparent conductive substrate; 200. a hole transport layer; 300. a perovskite light absorbing layer; 400. a passivation layer; 500. an electron transport layer; 600. a hole blocking layer; 700. a metal electrode.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present invention, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the present invention, the sum of the parts of the components in the composition may be 100 parts by weight, if not stated to the contrary. Unless otherwise indicated, the percentages (including weight percent) of the present invention are based on the total weight of the composition, and, in addition, "wt%" herein means mass percent and "at%" means atomic percent.
In this context, unless otherwise indicated, the individual reaction steps may or may not be performed in the order herein. For example, other steps may be included between the respective reaction steps, and the order of the reaction steps may be appropriately changed. This can be determined by the skilled person based on routine knowledge and experience. Preferably, the reaction processes herein are performed sequentially.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The embodiment of the application provides a preparation method of a trans-perovskite solar cell 10, which aims to solve the problems that the perovskite light absorption layer of the perovskite solar cell in the prior art has poor efficiency and stability under the long-term actions of water, oxygen, illumination and heat, so that the service life of the perovskite solar cell is reduced and the commercial application of the cell is seriously affected; and at least one of the problems of poor energy level matching, loss of open circuit voltage, poor wettability, large-area preparation and nucleation growth of a perovskite film, and the like, which are caused by the existence of a hollow transmission layer in the traditional technology, and the final photoelectric performance of the perovskite solar cell is influenced. The method of manufacturing the trans-perovskite solar cell 10 will be described below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a trans-perovskite solar cell 10 prepared by using the preparation method of the trans-perovskite solar cell 10 according to the embodiment of the application. The method of manufacturing a trans-perovskite solar cell 10 of the present application can be used to manufacture a perovskite solar cell 10.
In order to more clearly explain the structure of the method for manufacturing the trans-perovskite solar cell 10, the method for manufacturing the trans-perovskite solar cell 10 will be described below with reference to the accompanying drawings.
For example, referring to fig. 1, fig. 1 is a schematic structural diagram of a trans-perovskite solar cell 10 prepared by a method for preparing a trans-perovskite solar cell 10 according to an embodiment of the application.
Exemplary, a method of fabricating a trans perovskite solar cell 10 includes the steps of:
A hole transport material is dissolved in a perovskite precursor solution, the hole transport material comprising one or more of an organic hole transport material, an inorganic hole transport material, and a self-assembled monolayer material (SAM) with a passivating agent dissolved in an antisolvent.
The perovskite precursor solution is spin-coated and annealed to prepare the perovskite light-absorbing layer 300, the hole-transporting material is buried in the bottom in the spin-coating and annealing process, and the passivating agent is introduced into the bulk phase and the interface of the perovskite light-absorbing layer 300 in the process of adding the anti-solvent dropwise to form the passivation layer 400, so that defects at the bulk phase and the interface of the perovskite light-absorbing layer 300 are cooperatively passivated.
In the application, a solution method is adopted to introduce a hole transport material into a perovskite precursor solution, then a passivating agent is dissolved in an antisolvent, and then the hole transport material spontaneously diffuses downwards to the lower interface of a perovskite film in the film forming and annealing processes; meanwhile, in the process of dropwise adding the anti-solvent, the passivating agent in the anti-solvent also enters the perovskite film phase and the interface, so that defects at the perovskite film phase and the interface are passivated synergistically, the defect density of the perovskite light absorption layer is reduced, and the non-radiative recombination of the perovskite film is reduced. Finally, the efficiency of the photovoltaic device is effectively improved without the prefabricated hole transport layer 200.
In some of these embodiments, the passivating agent includes one or more of an alkali halide, an organic molecule, an organic halide salt, a polymer, and a metal halide.
In some embodiments, the antisolvent comprises at least one of chlorobenzene, ethyl acetate, anisole, diethyl ether, isopropanol, ethanol.
In some of these embodiments, the hole transport material is preferably a self-assembled monolayer material (SAM).
In some of these embodiments, the passivating agent is preferably one or both of an organic molecule and an organic halide salt.
In some of these embodiments, the self-assembled monolayer material (SAM) comprises [2- (9H-carbazol-9-yl) ethyl ] phosphonic acid (2 PACZ), (2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl) phosphonic acid (MeO-2 PACZ).
In some embodiments, the perovskite light absorbing layer 300 has a structural formula ABX 3, wherein a is one or more of methylamine, formamidine, acetamidine, cesium, or rubidium; b is one or more of lead, tin, copper and germanium; x is one or more of F -、I-、Br-、Cl-、BF4 -、PF6 - and SCN -.
In some of these embodiments, the concentration of the hole transporting material in the perovskite precursor solution ranges from 0.1mg/mL to 20mg/mL.
In some of these embodiments, the concentration of the passivating agent in the perovskite precursor solution ranges from 0.01mg/mL to 20mg/mL.
In some embodiments, the annealing treatment comprises a one-step annealing or a two-step annealing, wherein the temperature of the one-step annealing is in the range of 60 ℃ to 180 ℃ and the annealing time is in the range of 1min to 80min; the two-step annealing is to anneal for 1min to 30min at the temperature ranging from 50 ℃ to 100 ℃ and then to anneal for 1min to 60min at the temperature ranging from 80 ℃ to 180 ℃.
An embodiment of the present application also provides a trans perovskite solar cell 10.
The trans-perovskite solar cell 10 is manufactured by the manufacturing method, and the trans-perovskite solar cell 10 comprises a transparent conductive substrate 100, a first functional layer, a perovskite light absorption layer 300, a passivation layer 400, a second functional layer, a barrier layer and a metal electrode 700 which are sequentially laminated and distributed.
In some embodiments, the first functional layer and the second functional layer are respectively a hole transport layer 200 and an electron transport layer 500.
In some of these embodiments, the transparent conductive substrate 100 comprises a flexible substrate or a rigid substrate comprising ITO (indium tin oxide) transparent conductive glass and FTO (fluorine doped tin oxide) transparent conductive glass.
In some of these embodiments, a finishing layer and/or a buffer layer is also provided between the barrier layer and the metal electrode 700.
For example, in one embodiment, the trans-perovskite solar cell 10 includes a transparent conductive substrate 100, a hole transport layer 200, a perovskite light absorbing layer 300, a passivation layer 400, an electron transport layer 500, a hole blocking layer 600, and a metal electrode 700, which are sequentially stacked.
In some of these embodiments, the electron transport layer 500 (ETL) is made from a material including one or more of PCBM ([ 6,6] -phenyl-C71-butyric acid isopropyl ester), snO 2、ZnO2、Al2O3、C60, and ICBA (indene-C60 bis-adduct).
In some of these embodiments, the hole transport layer 200 (HTL) is made from a material including one or more of [2- (9H-carbazol-9-yl) ethyl ] phosphonic acid and derivatives thereof, [2- (9H-carbazol-9-yl) butyl ] phosphonic acid and derivatives thereof, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, polyethylene terephthalate, polymers of 3-hexylthiophene, PEDOT: PSS (poly 3, 4-ethylenedioxythiophene: polystyrene sulfonate), niO x, and CuSCN.
The embodiment of the application also provides a photovoltaic device.
A photovoltaic device comprising a package structure and a trans-perovskite solar cell 10 prepared by the above-described preparation method.
According to the preparation method, the preparation process is optimized, the hole transport material is directly dissolved in the perovskite precursor solution for spin coating, and the hole transport material and the passivating agent are simultaneously introduced into the perovskite film through perovskite phase doping and an antisolvent method, so that the preparation steps of the step hole transport layer 200 and the passivating layer are reduced, and the preparation period of the device is shortened. The invention does not need to prepare the hole transport layer 200 on conductive glass, so that the defect of poor wettability of the hole transport layer 200 is effectively avoided, the defects at the interfaces of the perovskite thin film phase and the surface can be effectively passivated, the defect density of the perovskite light absorption layer is reduced, the non-radiative recombination of the perovskite thin film is reduced, the crystal growth of the perovskite thin film is improved, the quality of the perovskite thin film is improved, the defect of poor wettability of the hole transport layer 200 is avoided, and the bulk defects of the perovskite thin film are effectively passivated.
Example 1
The present embodiment provides a trans perovskite solar cell 10.
The trans-perovskite solar cell 10 of the present embodiment is produced by the following production method.
A method of fabricating a trans perovskite solar cell 10 comprising the steps of:
(1) The FAI, pbI 2 and MACl, MAI, csI powder are mixed according to the molar ratio of 140:173:15:40:8, and 1mL of DMF (N, N-dimethylformamide) and DMSO (wherein the volume ratio of DMF to DMSO is 4:1) are added to obtain FA 0.85MA0.1Cs0.05PbI3 perovskite precursor solution; and adding a hole transport material SAM material (2 PACZ) into the perovskite precursor solution, wherein the concentration range of the hole transport material in the perovskite precursor solution is 20mg/mL. Then, a passivating agent PEAI (phenethyl iodinated amine) is dissolved in an antisolvent (CB), and the concentration of the passivating agent is 20mg/mL.
(2) The ITO transparent conductive glass was cleaned and dried with nitrogen gas as the transparent conductive substrate 100.
(3) The perovskite light absorption layer 300 is prepared on the ITO transparent conductive glass by a spin coating method, and SAM materials in a perovskite precursor solution are downwards diffused along the grain boundary of the perovskite in the spin coating and annealing processes, and are automatically assembled or buried to the bottom of the perovskite film to form the hole transport layer 200. The passivating agent is introduced into the bulk phase and the interface of the perovskite light absorbing layer 300 in the process of adding the anti-solvent dropwise to form the passivation layer 400, and the passivation layer 400 is used for cooperatively passivating defects at the bulk phase and the interface of the perovskite light absorbing layer 300.
(4) C 60 with a thickness of 30nm is sequentially evaporated on the perovskite light absorbing layer 300 prepared in the step (3) as an electron transporting layer 500, BCP (2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline) with a thickness of 6nm is evaporated as a hole blocking layer 600, and an Au electrode with a thickness of 150 nm is evaporated as a metal electrode 700 by means of vacuum evaporation.
Example 2
The present embodiment provides a trans perovskite solar cell 10.
The trans-perovskite solar cell 10 of the present embodiment is produced by the following production method.
A method of fabricating a trans perovskite solar cell 10 comprising the steps of:
(1) The FAI, pbI 2 and MACl, MAI, csI powder are mixed according to the molar ratio of 140:173:15:40:8, and 1mL of DMF (N, N-dimethylformamide) and DMSO (wherein the volume ratio of DMF to DMSO is 4:1) are added to obtain FA 0.85MA0.1Cs0.05PbI3 perovskite precursor solution; and adding a hole transport material SAM material (MeO-2 PACZ) into the perovskite precursor solution, wherein the concentration range of the hole transport material in the perovskite precursor solution is 20mg/mL. Then, passivating agent 4F-PEAI (4-fluoro-phenethyl iodinated amine) is dissolved in an antisolvent (CB), and the concentration of the passivating agent is 20mg/mL.
(2) The ITO transparent conductive glass was cleaned and dried with nitrogen gas as the transparent conductive substrate 100.
(3) The perovskite light absorption layer 300 is prepared on the ITO transparent conductive glass by a spin coating method, and SAM materials in a perovskite precursor solution are downwards diffused along the grain boundary of the perovskite in the spin coating and annealing processes, and are automatically assembled or buried to the bottom of the perovskite film to form the hole transport layer 200. The passivating agent is introduced into the bulk phase and the interface of the perovskite light absorbing layer 300 in the process of adding the anti-solvent dropwise to form the passivation layer 400, and the passivation layer 400 is used for cooperatively passivating defects at the bulk phase and the interface of the perovskite light absorbing layer.
(4) The perovskite light absorbing layer 300 prepared in the step (3) is sequentially evaporated with a thickness of 30nm as an electron transport layer 500, an evaporation thickness of 6nm of BCP (2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline) as a hole blocking layer 600, and an evaporation thickness of 150 nm of Au electrode as a metal electrode 700 by means of vacuum evaporation.
The perovskite solar cell 1010 prepared in examples 1 to 2 was subjected to performance test, and the test results are shown in table 1.
TABLE 1
In summary, the preparation method of the trans-perovskite solar cell 10 of the present application can improve wettability of the perovskite substrate, allocate energy levels of the perovskite solar cell, reduce defects of perovskite phases and surface interfaces, further reduce non-radiative recombination of carriers in the perovskite cell, and improve photoelectric performance and stability of the cell. Specifically, in the preparation method of the trans-perovskite solar cell 10, the perovskite is doped by adopting the hole transport material such as the self-assembled monolayer material (SAM) to form the buried interface, and perovskite defect passivation is carried out by combining an anti-solvent method, in the process of spin coating and annealing treatment, the hole transport material is automatically buried at the interface to form the hole transport layer 200, and meanwhile, the passivation agent in the anti-solvent can also carry out passivation modification on the perovskite light absorption layer, so that the efficiency and stability of the cell are improved, and the method has important significance in the aspect of perovskite defect passivation.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The preparation method of the trans-perovskite solar cell is characterized by comprising the following steps of:
dissolving a hole transport material in a perovskite precursor solution, wherein the hole transport material comprises one or more of an organic hole transport material, an inorganic hole transport material and a self-assembled monolayer material SAM; dissolving a passivating agent in an antisolvent;
And spin-coating and annealing the perovskite precursor solution to prepare the perovskite light-absorbing layer, burying a hole-transporting material in the spin-coating and annealing process, introducing a passivating agent into the bulk phase and the interface of the perovskite light-absorbing layer in the process of dripping an antisolvent to form a passivation layer, thereby synergistically passivating defects at the bulk phase and the interface of the perovskite light-absorbing layer.
2. The method of claim 1, wherein the passivating agent comprises one or more of an alkali halide, an organic molecule, an organic halide salt, a polymer, and a metal halide;
and/or the antisolvent comprises at least one of chlorobenzene, ethyl acetate, anisole, diethyl ether, isopropanol, ethanol.
3. The method of claim 2, wherein the hole transport material is a self-assembled monolayer material SAM;
and/or the passivating agent is one or two of organic molecules and organic halide salts.
4. The method for preparing a trans-perovskite solar cell according to any one of claims 1 to 3, wherein the structural formula of the perovskite light absorption layer is ABX 3, wherein a is one or more of methylamine, formamidine, acetamidine, cesium or rubidium; b is one or more of lead, tin, copper and germanium; x is one or more of F -、I-、Br-、Cl-、BF4 -、PF6 - and SCN -.
5. The method for producing a trans-perovskite solar cell according to any one of claims 1 to 3, wherein the concentration of the hole transport material in the perovskite precursor solution is in the range of 0.1mg/mL to 20mg/mL.
6. The method for producing a trans-perovskite solar cell according to any one of claims 1 to 3, wherein the concentration of the passivating agent in the antisolvent is in the range of 0.01mg/mL to 30mg/mL.
7. The method for manufacturing a trans-perovskite solar cell according to any one of claims 1 to 3, wherein the annealing treatment comprises one-step annealing or two-step annealing, wherein the temperature of the one-step annealing is 60 to 180 ℃ and the annealing time is 1 to 80 minutes; the two-step annealing is to anneal for 1min to 30min at the temperature ranging from 50 ℃ to 100 ℃ and then to anneal for 1min to 60min at the temperature ranging from 80 ℃ to 180 ℃.
8. The trans-perovskite solar cell is characterized by being prepared by adopting the preparation method of any one of claims 1-7, and comprises a transparent conductive substrate, a first functional layer, a perovskite light absorption layer, a passivation layer, a second functional layer, a barrier layer and a metal electrode which are sequentially laminated and distributed.
9. The trans-perovskite solar cell of claim 8, wherein the first functional layer and the second functional layer are a hole transport layer and an electron transport layer, respectively;
and/or the transparent conductive substrate comprises a flexible substrate or a rigid substrate, wherein the rigid substrate comprises ITO transparent conductive glass and FTO transparent conductive glass;
And/or a decorative layer and/or a buffer layer are/is arranged between the barrier layer and the metal electrode.
10. A photovoltaic device, characterized by comprising a packaging structure and a trans perovskite solar cell prepared by the preparation method according to any one of claims 1 to 7 or a trans perovskite solar cell according to claim 8 or 9.
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