CN118018116A - 50GPON optical communication system of silicon optical transceiver chip - Google Patents
50GPON optical communication system of silicon optical transceiver chip Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 183
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
The invention provides a 50GPON optical network communication system of a silicon optical transceiver chip, which comprises an Optical Line Terminal (OLT) with a downlink transmitter and an uplink receiver system configured for time division wavelength division detection; the system further comprises a splitter ODN in operative communication with the OLT and a plurality of optical network units ONU in operative communication with the splitter; the optical line terminal OLT includes: the first DSP chip, the first silicon light transceiver chip, the first external light source, the first TIA chip and the first multiplexer, every the optical network unit includes: the second DSP chip, the second silicon light transceiver chip, the second external light source, the second TIA chip and the second multiplexer; the second silicon optical transceiver chip and the second multiplexer are respectively coupled with an external power supply unit through an optical fiber array FA; the transmission path of the network high-speed electric signal of the optical network communication system has good market prospect.
Description
Technical Field
The invention relates to the technical field of network communication data, in particular to a 50GPON optical communication system of a silicon optical transceiver chip.
Background
Network communication systems utilize Passive Optical Networks (PON). The system includes an Optical Line Terminal (OLT) having a downstream transmitter and an upstream receiver system configured for time division wavelength division detection. The system further includes a splitter in operative communication with the OLT and a plurality of Optical Network Units (ONUs) in operative communication with the splitter. Each of the plurality of ONUs is configured to (i) receive downstream burst signals from the OLT, and (ii) transmit at least one upstream burst signal to the OLT. The upstream receiver system further includes a power control module and a Local Oscillator (LO) configured to generate an optical LO signal. The power control module is configured to adaptively control a power level of the optical LO signal in real-time.
The key devices of the 50G PON optical module of the conventional technical route in the prior art comprise a DSP chip, a laser driving chip, a laser, an avalanche photodiode APD, an electric signal amplifier TIA and the like, and meanwhile, in order to realize a single-fiber bidirectional receiving and transmitting function, an optical filter is needed for a transmitter and a receiver to separate optical signals with two received and transmitted wavelengths.
1. The conventional technical route has the defects that:
The architecture of the conventional technology routing optical module has the defects that the quality of the high-speed electric signal is seriously degraded due to the fact that the high-speed signal transmission link from the DSP chip to the optical device is too long, connectors with different impedances and the optical device are needed to pass through, particularly, the flexible circuit board FPC used for connecting the optical device and the printed circuit board PCB objectively has the problem of impedance mismatch with different degrees, and the loss is compensated by depending on a stronger algorithm of the DSP chip and the optical device with higher performance.
The processing mode of the DSP chip is usually to enhance the algorithm processing such as pre-emphasis and equalization on the high-speed electric signals, and the problem is that the DSP chip needs higher power consumption and can generate strong high-frequency signal radiation to influence the whole electromagnetic compatibility of the optical module.
The high performance optical device requires higher bandwidth and coupling process, which necessarily increases the cost and technical barrier of the optical module, and is not beneficial to the popularization and development of 50G PON industry.
With the advent of the 5G era, the trend of explosive growth of internet traffic has been increasingly highlighted by the powerful driving of services such as virtual reality, smart home, ultra-high definition (3D) video, industrial control, cloud VR, and the like.
Currently, three major operators have successively entered a 10GPON scale deployment stage, and an optical access network enters a process of updating, so that the key opportunity for deploying next-generation PON technology research is fully started. As a next-generation PON technology, deployment of 50G PON for 2025 or so has become an industry consensus. The standardization work of 50G PON requirements, architecture, physical layer and protocol layer has been substantially completed in month 4 of 2023.
For 50G PON optical modules, the following technical challenges are currently faced: 1. high-speed optical devices and electrical chips supporting burst functions; 2. higher emitted light power; 3. a high-speed receiver of high sensitivity; 4. there is a need to overcome the dispersion problems associated with high speed transmissions.
In order to achieve a transmission rate of 50Gbps, there are two signal modulation schemes, one is 50Gbps NRZ modulation and the other is 25Gbd fourth order pulse amplitude modulation (PAM 4) modulation. Because PAM4 signal transmission cost is relatively high, the 50G PON is not suitable for a large loss scenario, and only NRZ modulation can be selected. In terms of electrical chips, laser driver chips supporting burst functions are currently being used commercially at 25G rates. The 50G PON optical module scheme which can be realized at the present stage selects 50G NRZ for downlink (downlink) rate, and selects burst 25G NRZ for uplink (uplink) rate, so that asymmetric application of the 50G PON is realized, as shown in a figure I.
The protocol ITU-T g.9804.3 of the 50G PON optical module specifies that, to meet the power budget requirement of the optical distribution network ODN link Class c+ (32 dB), the downlink transmit optical power at the transmission rate of 50Gbps should reach +8.5dbm, the downlink receive sensitivity should reach-24 dBm, the commonly used transmitter in the technical route in the industry at this stage is a high-speed electro-absorption adjustment laser EML with a semiconductor optical amplifier SOA, and the receiver is an avalanche photodiode APD with a high-speed electrical signal amplifier TIA, which has a higher challenge for high-speed optical devices.
The application of the DSP digital signal processing technology is indispensable in a 50G PON optical module, and the main functions of the DSP chip include: 1. providing NRZ modulated signals up to 50 Gbps; 2. providing burst clock recovery and equalization in the upstream direction; 3. providing a Forward Error Correction (FEC) function to improve the receiving sensitivity; 4. compensating intersymbol interference (ISI) caused by insufficient bandwidth of an optical device; 5. compensating chromatic dispersion damage caused by high-speed long-distance transmission; 6. multi-rate selection is supported. DSP technology is now very mature, benefiting from many years of development of PAM4 technology.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a 50GPON optical module of a silicon optical transceiver chip, wherein the silicon optical transceiver chip replaces a transmitter and a receiver in a conventional technical route, a flexible circuit board FPC (flexible printed circuit) connected with a printed circuit board PCB by an optical device is not needed, and the transmission path of high-speed electric signals is greatly simplified and shortened. The miniaturization, low power consumption, high reliability and low cost brought by the high integration level of the silicon optical transceiver chip greatly improve the market competitiveness of the 50G PON optical module.
In order to solve the technical problems, the invention adopts the following technical scheme:
A 50GPON optical network communication system of a silicon optical transceiver chip, the system comprising an optical line termination OLT having a downstream transmitter and an upstream receiver system configured for time division wavelength division detection; the system further comprises a splitter ODN in operative communication with the OLT and a plurality of optical network units ONU in operative communication with the splitter;
The optical line terminal OLT includes: the device comprises a first DSP chip, a first silicon light transceiver chip, a first external light source, a first TIA chip and a first multiplexer, wherein: the output end of the first DSP chip is connected with the first silicon light receiving and transmitting chip; the output end of the first silicon optical transceiver chip is connected with the first multiplexer; the output end of the first multiplexer is connected with the first silicon optical transceiver chip; the first silicon optical transceiver chip and the first TIA chip; the output end of the first TIA chip is connected with the first DSP chip; wherein: the first silicon optical transceiver chip and the first multiplexer are respectively coupled with an external power supply unit through an optical fiber array FA;
Each of the optical network units comprises: the second DSP chip, the second silicon light transceiver chip, the second external light source, the second TIA chip and the second multiplexer, wherein: the output end of the second DSP chip is connected with the second silicon optical transceiver chip; the output end of the second silicon optical transceiver chip is connected with the second multiplexer; the output end of the second multiplexer is connected with the second silicon optical transceiver chip; the second silicon optical transceiver chip and the second TIA chip; the output end of the second TIA chip is connected with the second DSP chip; wherein: the second silicon optical transceiver chip and the second multiplexer are respectively coupled with an external power supply unit through an optical Fiber Array (FA), wherein:
the first silicon optical transceiver chip and the second silicon optical transceiver chip each comprise: the device comprises a first coupling unit, an optical phase modulation unit, a photoelectric detection unit, an optical filtering unit and a second coupling unit; wherein:
the first coupling unit couples the silicon-based waveguide and different optical spots of the optical fiber to output FA coupled light waves
The optical bit modulation unit inputs a first optical signal subjected to phase adjustment by the coupled light wave to the optical filtering unit;
The optical filtering unit inputs the first optical signal and the FA coupled light waves output by the second coupling unit into the optical detection unit after the FA coupled light waves are separated according to different wavelengths;
the photoelectric detection unit inputs the high-speed electric signal processed by the second optical signal to the first TIA chip or the second TIA chip;
the first DSP chip and the second DSP chip each include: a PCS encoding unit and a PCS decoding unit; wherein:
Two paths of 25GNRZ electric signals input by the PCS coding unit to the golden finger optical module are obtained by a pre-addition algorithm, and one path of 50GNRZ electric signals are output to a first DSP chip or the second DSP chip;
The PCS decoding unit outputs 25GNRZ electric signals which are input 25GNRZ electric signals by the first TIA chip and the second TIA chip and subjected to clock data recovery and equalization processing to the golden finger optical module.
Further, the optical phase modulation unit adopts a silicon-based lithium niobate LiNbO3 electro-optic modulator; the photoelectric detection unit is an integrated waveguide type germanium-silicon Ge/Si photoelectric detector; the optical filtering unit is a passive silicon-based filter with an integrated waveguide grating structure.
Further, the external power supply unit includes: a first current control circuit and a second current control circuit; wherein:
The first current control circuit is used for controlling the TEC of the semiconductor refrigerator to provide stable wavelength;
the second current control circuit is used for modulating the current of the adjustable bias device and the adjustable light amplifier to provide a high light signal.
Further, the first TIA chip and the second TIA chip each include a resistive amplifier TIA, a phase splitter, and a differential drive unit.
Advantageous effects
1. The 50G PON system designed by adopting the silicon optical transceiver chip does not need a flexible circuit board FPC connected with a printed circuit board PCB by using an optical device, and the transmission path of high-speed electric signals is greatly simplified and shortened; the miniaturization, low power consumption, high reliability and low cost brought by the high integration level of the silicon optical transceiver chip greatly improve the market competitiveness of the 50G PON optical module.
2. The external light source is coupled to the silicon light receiving and transmitting chip by utilizing the FA, so that the coupling difficulty caused by directly coupling a laser on the silicon light receiving and transmitting chip is reduced;
3. The invention adopts the high-precision adjustable bias electrode voltage control circuit to carry out accurate phase modulation on the optical modulator of the silicon optical transceiver chip, and matches the frequency jitter of the 50GNRZ high-speed signal output by the DSP chip to achieve the optimal modulation effect.
Drawings
Fig. 1 is a schematic diagram of an optical communication system of a 50G PON in the prior art;
FIG. 2 is a schematic diagram of a 50GPON optical communication system of a silicon optical transceiver chip according to the present invention;
FIG. 3 is a schematic diagram of a DSP chip structure according to the present invention;
FIG. 4 is a schematic diagram of a silicon optical transceiver chip according to the present invention;
fig. 5 is a schematic diagram of a TIA chip according to the present invention.
Detailed Description
The invention is described in detail below with reference to fig. 2 to 5:
as shown in fig. 2, the present invention provides a 50GPON optical network communication system with a silicon optical transceiver chip; the system utilizes a passive optical network PON. The system includes an optical line terminal 100 having a downstream transmitter and an upstream receiver system configured for time division wavelength division detection. The system further includes a splitter 200 in operative communication with the splitter, and a plurality of optical network units 300 in operative communication with the splitter.
The optical line terminal OLT includes: the device comprises a first DSP chip, a first silicon light transceiver chip, a first external light source, a first TIA chip and a first multiplexer, wherein: the output end of the first DSP chip is connected with the first silicon light receiving and transmitting chip; the output end of the first silicon optical transceiver chip is connected with the first multiplexer; the output end of the first multiplexer is connected with the first silicon optical transceiver chip; the first silicon optical transceiver chip and the first TIA chip; the output end of the first TIA chip is connected with the first DSP chip; wherein: the first silicon optical transceiver chip and the first multiplexer are respectively coupled with an external power supply through an optical fiber array FA.
Each of the optical network units comprises: the second DSP chip, the second silicon light transceiver chip, the second external light source, the second TIA chip and the second multiplexer, wherein: the output end of the second DSP chip is connected with the second silicon optical transceiver chip; the output end of the second silicon optical transceiver chip is connected with the second multiplexer; the output end of the second multiplexer is connected with the second silicon optical transceiver chip; the second silicon optical transceiver chip and the second TIA chip; the output end of the second TIA chip is connected with the second DSP chip; wherein: the second silicon optical transceiver chip and the second multiplexer are respectively coupled with an external power supply through an optical fiber array FA. Wherein:
the first DSP chip and the second DSP chip each include: a PCS encoding unit and a PCS decoding unit;
Two paths of 25GNRZ electric signals input by the PCS coding unit to the golden finger optical module are obtained by a pre-addition algorithm, and one path of 50GNRZ electric signals are output to a first DSP chip or the second DSP chip; the PCS decoding unit outputs 25GNRZ electric signals which are input 25GNRZ electric signals by the first TIA chip and the second TIA chip and subjected to clock data recovery and equalization processing to the golden finger optical module.
The PCS coding unit synthesizes two paths of 25G NRZ electric signals input by an optical module golden finger into one path of 50G NRZ electric signal (Gearbox function), and outputs the 50G NRZ electric signal to the transmitting end of the silicon optical transceiver chip, meanwhile, the PCS decoding unit receives one path of 25G NRZ electric signal input by the TIA chip, and outputs one path of 25G NRZ electric signal to the golden finger of the optical module through operations such as clock data recovery and the like in the DSP chip, as shown in figure 3;
The first DSP chip and the second DSP chip provide adjustable algorithms such as pre-emphasis, equalization and the like for the electric signals, shape the input and output electric signals and match with an actual circuit to achieve better signal quality.
All differential signal pairs need to be subjected to circuit impedance matching simulation, and the algorithm budget of the first DSP chip and the second DSP chip can be reduced by good impedance matching.
Description of functional blocks of the silicon optical transceiver chip:
the first silicon optical transceiver chip and the second silicon optical transceiver chip each comprise: the device comprises a first coupling unit, an optical phase modulation unit, a photoelectric detection unit, an optical filtering unit and a second coupling unit; wherein:
the first coupling unit couples the silicon-based waveguide and different optical spots of the optical fiber to output FA coupled light waves
The optical bit modulation unit inputs a first optical signal subjected to phase adjustment by the coupled light wave to the optical filtering unit;
The optical filtering unit inputs the first optical signal and the FA coupled light waves output by the second coupling unit into the optical detection unit after the FA coupled light waves are separated according to different wavelengths;
and the photoelectric detection unit inputs the high-speed electric signal processed by the second optical signal to the first TIA chip or the second TIA chip. Wherein:
The first silicon optical transceiver chip and the second silicon optical transceiver chip of the invention are respectively provided with an optical phase modulator, a silicon-based avalanche photodetector, a silicon-based optical wavelength division multiplexing filter and a low-loss coupler, as shown in a figure IV:
The optical phase modulation unit is based on a silicon-based lithium niobate LiNbO3 electro-optic modulator, integrates a Mach-Zehnder interferometer MZI on a chip, carries out phase modulation on incident light, outputs a light signal with modulation, and has the advantages of high modulation rate, low chirp and low wavelength dependence. For the ultra-high speed modulation rate of 50Gbps in the downlink direction of a 50G PON optical module and the special wavelength requirement of 1342nm, the lithium niobate LiNbO3 electro-optic modulator has obvious performance advantages. The optical modulation unit needs to provide a high-precision adjustable bias electrode voltage control circuit externally, metal electrodes are arranged on two sides of the optical modulation unit to apply a modulation electric field, and lower bias phase modulation is realized in the LiNbO3 waveguide by utilizing the push-pull electrode; the photoelectric detection unit adopts a silicon-based avalanche photoelectric detector APD which is an on-chip integrated waveguide-type germanium-silicon Ge/Si photoelectric detector, converts an incident high-speed optical signal into a high-speed electric signal, and has the advantages of high sensitivity, high responsivity and large bandwidth. The silicon-based avalanche photodetector APD detector needs to be externally provided with a low-noise adjustable high-voltage control circuit, so that the avalanche photodetector works at the optimal sensitivity;
the optical filter unit adopts a silicon-based optical wavelength division multiplexing filter, the silicon-based optical wavelength division multiplexing filter is a passive silicon-based filter of an on-chip integrated waveguide grating structure, reflects or transmits the wavelength meeting the specific Bragg condition in the grating, realizes the separation of two paths of optical signals with different wavelengths at the transmitting end and the receiving end, and has the advantages of low insertion loss and low channel crosstalk.
The first coupling unit and the second coupling unit adopt a structure that a low-loss coupler is an inverse conical waveguide coupler, so that the silicon-based waveguide and optical fiber optical speckles with different sizes are coupled, and the advantages of high coupling efficiency, simple process and high tolerance are achieved.
The external power supply unit includes: the first current control circuit is used for controlling the semiconductor refrigerator TEC to provide stable wavelength; the second current control circuit is used for modulating the current of the adjustable bias and the adjustable light amplifier to provide a high light signal. In the invention, the silicon optical transceiver chip uses Mach-Zehnder modulation MZM, which is an external modulation mode, an external distributed feedback laser DFB is needed as an optical carrier, the optical carrier enters a modulator, and a high-speed signal is superimposed on an optical carrier signal in a driving voltage mode to complete signal modulation, as shown in figure 4. The invention relates to an external light source with two requirements, namely stable wavelength and high light power. The wavelength stabilization requires the external supply of a semiconductor refrigerator TEC current control circuit, so that the laser tube works at a stable temperature to realize the wavelength stabilization. The high optical power needs to provide an adjustable bias current and an adjustable optical amplifier SOA current control circuit externally, so that the optical modulator in the silicon optical transceiver chip can output proper high optical power.
The TIA chip of the present invention mainly includes a transimpedance amplifier TIA, a phase splitter, and a differential drive output, as shown in fig. 5. The weak current signal output from the avalanche photodetector APD is amplified into a voltage signal, and the voltage signal is split into differential signals and output. The main parameter indexes of the TIA chip comprise working bandwidth, gain, input noise and the like.
Although the present invention has been described above, the present invention is not limited to the above-described embodiment, which is merely illustrative and not restrictive, and many modifications may be made by those of ordinary skill in the art without departing from the spirit of the invention, which fall within the protection of the present invention.
Claims (4)
1. A 50GPON optical network communication system of a silicon optical transceiver chip, the system comprising an optical line termination OLT having a downstream transmitter and an upstream receiver system configured for time division wavelength division detection; the system further comprises a splitter ODN in operative communication with the OLT and a plurality of optical network units ONU in operative communication with the splitter; the method is characterized in that:
The optical line terminal OLT includes: the first DSP chip, the first silicon light transceiver chip, the first external light source, the first TI A chip and the first multiplexer, wherein: the output end of the first DSP chip is connected with the first silicon light receiving and transmitting chip; the output end of the first silicon optical transceiver chip is connected with the first multiplexer; the output end of the first multiplexer is connected with the first silicon optical transceiver chip; the first silicon optical transceiver chip and the first TIA chip; the output end of the first TIA chip is connected with the first DSP chip; wherein: the first silicon optical transceiver chip and the first multiplexer are respectively coupled with an external power supply unit through an optical fiber array FA;
Each of the optical network units comprises: the second DSP chip, the second silicon light transceiver chip, the second external light source, the second TI A chip and the second multiplexer, wherein: the output end of the second DSP chip is connected with the second silicon optical transceiver chip; the output end of the second silicon optical transceiver chip is connected with the second multiplexer; the output end of the second multiplexer is connected with the second silicon optical transceiver chip; the second silicon optical transceiver chip and the second TIA chip; the output end of the second TIA chip is connected with the second DSP chip; wherein: the second silicon optical transceiver chip and the second multiplexer are respectively coupled with an external power supply unit through an optical fiber array FA; wherein:
the first silicon optical transceiver chip and the second silicon optical transceiver chip each comprise: the device comprises a first coupling unit, an optical phase modulation unit, a photoelectric detection unit, an optical filtering unit and a second coupling unit; wherein:
the first coupling unit couples the silicon-based waveguide and different optical spots of the optical fiber to output FA coupled light waves
The optical bit modulation unit inputs a first optical signal subjected to phase adjustment by the coupled light wave to the optical filtering unit;
The optical filtering unit inputs the first optical signal and the FA coupled light waves output by the second coupling unit into the optical detection unit after the FA coupled light waves are separated according to different wavelengths;
the photoelectric detection unit inputs the high-speed electric signal processed by the second optical signal to the first TIA chip or the second TIA chip; wherein:
the first DSP chip and the second DSP chip each include: the PCS coding unit, the PCS decoding unit and the golden finger optical module; wherein:
Two paths of 25GNRZ electric signals input by the PCS coding unit to the golden finger optical module are obtained by a pre-addition algorithm, and one path of 50GNRZ electric signals are output to a first DSP chip or the second DSP chip;
The PCS decoding unit outputs 25GNRZ electric signals which are input 25GNRZ electric signals by the first TIA chip and the second TIA chip and subjected to clock data recovery and equalization processing to the golden finger optical module.
2. The 50GPON optical network communication system of a silicon optical transceiver chip as defined in claim 1, wherein: the optical phase modulation unit adopts a silicon-based lithium niobate LiNbO3 electro-optic modulator; the photoelectric detection unit is an integrated waveguide type germanium-silicon Ge/Si photoelectric detector; the optical filtering unit is a passive silicon-based filter with an integrated waveguide grating structure.
3. The 50GPON optical network communication system of a silicon optical transceiver chip as defined in claim 1, wherein: the external power supply unit comprises a first current control circuit and a second current control circuit; wherein:
the first current control circuit is used for controlling the semiconductor refrigerator TEC to provide stable wavelength;
The second current control circuit is used for modulating the current of the adjustable bias and the adjustable light amplifier to provide a high light signal.
4. The 50GPON optical network communication system of a silicon optical transceiver chip as defined in claim 1, wherein: the first TIA chip and the second TIA chip comprise a resistive amplifier TIA, a phase splitter and a differential driving unit.
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