CN118001914A - Electric heating water-washing type semiconductor tail gas treatment equipment - Google Patents
Electric heating water-washing type semiconductor tail gas treatment equipment Download PDFInfo
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- CN118001914A CN118001914A CN202410325928.0A CN202410325928A CN118001914A CN 118001914 A CN118001914 A CN 118001914A CN 202410325928 A CN202410325928 A CN 202410325928A CN 118001914 A CN118001914 A CN 118001914A
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Abstract
The invention provides electric heating water washing type semiconductor tail gas treatment equipment which comprises an air inlet pipe, a main cavity, a heating rod, a reaction cavity, a cooling cavity, a water tank and a gas-liquid separation cavity, wherein the air inlet pipe is connected with the main cavity; the gas-liquid separation cavity comprises a first exhaust cavity, a second exhaust cavity and an acid discharge pipe; the first exhaust cavity is fixedly connected with the second exhaust cavity through a flange; the second exhaust cavity is fixedly connected with the acid exhaust pipe through a flange. The electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention has the advantages of simple structure and corrosion resistance; the electric heating water-washing type tail gas treatment process provided by the invention prevents the internal materials of a water washing system from being corroded in an accelerated way, prolongs the service life of equipment, saves the cost and improves the tail gas treatment efficiency.
Description
Technical Field
The invention relates to the field of semiconductor tail gas treatment, in particular to electric heating water washing type semiconductor tail gas treatment equipment.
Background
Many of the chemicals and process gases used in semiconductor manufacturing processes are highly toxic, flammable or explosive. Such as VOCs, siH 4、SiF4、 HF, etc., can be a threat to the life safety of workers and surrounding residents. These harmful gases, if left untreated, may cause acute or chronic poisoning, causing serious damage to the respiratory system, skin and eyes. VOCs, for example, participate in atmospheric photochemical reactions to form ozone and secondary organic aerosols, exacerbating the air pollution problem. Therefore, environmental protection departments in various places have established strict industrial waste gas emission standards, and enterprises are required to purify the discharged waste gas, and the waste gas can be discharged into the atmosphere after reaching the specified emission limit.
The semiconductor exhaust gas treatment technology can be classified into a combustion type exhaust gas treatment technology, a plasma type exhaust gas treatment technology, an electric heating type exhaust gas treatment technology, and the like. The combustion type tail gas treatment technology mainly comprises direct combustion and catalytic combustion. In the direct combustion method, tail gas is sent into a high-temperature combustion chamber to fully burn organic substances in the tail gas and convert the organic substances into harmless substances such as carbon dioxide, water and the like, and the catalytic combustion realizes the same oxidation process by reducing the reaction temperature in the presence of a catalyst, so that the energy is saved and the control is easier. The plasma tail gas treatment technology is a method for treating tail gas by utilizing high-voltage discharge to generate non-equilibrium state plasma, electrons and active particles (such as ions and free radicals) in the plasma have extremely high energy, and organic pollutants and partial inorganic pollutants in the tail gas can be efficiently cracked and oxidized. The electric heating water washing type semiconductor tail gas treatment is a tail gas purifying technology aiming at acid and alkaline gases and other harmful organic pollutants generated in the semiconductor manufacturing process. Typically, the exhaust gas entering the exhaust gas treatment device is preheated by an electric heating device so that the harmful components therein are more likely to chemically react or physically adsorb with water or other solvents. The preheated tail gas is then contacted with a heated scrubbing liquid (typically deionized water or a solution with chemical agents added) via a spray system, and the contaminants dissolve or react with the chemical agents in the scrubbing liquid at elevated temperatures to form disposable byproducts. After washing with water, the mixture is further separated from the gas by the apparatus, ensuring that most of the harmful components remain in the water, while the clean gas can be discharged.
However, in the electric heating water washing type semiconductor tail gas treatment, the high temperature and acid-base environment can cause accelerated corrosion of materials in the system, and the service life and maintenance cost of equipment are affected; in addition, the conventional electric heating water-washing type semiconductor tail gas treatment equipment has poor water washing effect.
Therefore, the prior art needs to be solved.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides electric heating water washing type semiconductor tail gas treatment equipment. Based on the problems, the electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention has a good water washing effect.
The technical scheme of the invention is realized as follows:
The electric heating water-washing type semiconductor tail gas treatment equipment comprises an air inlet pipe, a main cavity, a heating rod, a reaction cavity, a cooling cavity, a water tank and a gas-liquid separation cavity, wherein the air inlet pipe is connected with the main cavity;
The gas-liquid separation cavity comprises a first exhaust cavity, a second exhaust cavity and an acid discharge pipe; the first exhaust cavity is fixedly connected with the second exhaust cavity through a flange; the second exhaust cavity is fixedly connected with the acid exhaust pipe through a flange.
As for the electric heating water-washing type semiconductor tail gas treatment equipment, the reaction cavity is sequentially provided with the first cavity layer, the second cavity layer and the third cavity layer from outside to inside, a sealed inner cavity is formed between the first cavity layer and the second cavity layer, and circulating cooling water enters the sealed inner cavity under the action of the circulating pump.
In the electric heating water-washing type semiconductor tail gas treatment device, the inner part of the third cavity layer is coated with a high-temperature-resistant and corrosion-resistant material.
The electric heating water-washing type semiconductor tail gas treatment equipment is characterized in that the water tank is provided with the water inlet pipe, the first water spraying pipe, the second water spraying pipe and the third water spraying pipe, and the water inlet pipe is respectively communicated with the first water spraying pipe, the second water spraying pipe and the third water spraying pipe.
The electric heating water washing type semiconductor tail gas treatment equipment comprises a first water spraying pipe, a second water spraying pipe, a third water spraying pipe and a third water spraying pipe, wherein the first water spraying pipe and the third water spraying pipe are horizontally arranged and are mutually vertical; the second water spraying pipe and the third water spraying pipe are horizontally arranged and mutually perpendicular; the first water spraying pipe, the second water spraying pipe and the third water spraying pipe are in the same plane.
The electric heating water washing type semiconductor tail gas treatment equipment is characterized in that the heights of the first water spraying pipe, the second water spraying pipe and the third water spraying pipe are lower than the upper cover plate of the water tank.
The electric heating water washing type semiconductor tail gas treatment equipment is characterized in that a plurality of nozzles are arranged on the first water spraying pipe, the second water spraying pipe and the third water spraying pipe.
The electric heating water washing type semiconductor tail gas treatment equipment is characterized in that a plurality of unidirectional nozzles are arranged on the first water spraying pipe and the third water spraying pipe, and a plurality of bidirectional nozzles are arranged on the second water spraying pipe.
The electric heating water-washing type semiconductor tail gas treatment equipment comprises the cooling cavity, wherein the cooling cavity comprises a cooling outer cavity and a cooling inner cavity, the top of the cooling outer cavity is provided with an upper end face, and a gap is reserved between the upper end face and the top of the cooling inner cavity; the cooling outer cavity and the cooling inner cavity form a vortex cavity for containing cooling water, and the cooling water in the vortex cavity flows down along the inner wall of the cooling inner cavity in a water curtain manner through the gap.
The electric heating water washing type semiconductor tail gas treatment equipment is characterized in that the cooling outer cavity is provided with the first water inlet and the second water inlet, the vortex cavity is a spiral channel, the first water inlet is arranged at the starting point of the spiral channel, and the second water inlet is arranged at the end point of the spiral channel.
The electric heating water-washing type semiconductor tail gas treatment equipment is characterized in that a spray opening is arranged below the cooling inner cavity; the spray opening forms an included angle of 30-60 degrees with the axis of the cooling inner cavity.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. The electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention adopts an electric heating mode to generate high temperature, so that the equipment has the advantages of strong controllability and high response speed, and is cleaner and more efficient compared with the traditional combustion heating mode. Harmful substances in the tail gas can undergo a series of chemical reactions such as cracking, oxidation and the like after contacting with high temperature, so that toxic and harmful components are converted into a relatively harmless or easy-to-process form; the electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention has the advantages of simple structure and corrosion resistance.
2. According to the electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention, the first water spraying pipe, the second water spraying pipe and the third water spraying pipe are in the same plane to form a three-dimensional crossed spraying network. The three-dimensional layout ensures that the tail gas can contact spray water in all directions after entering the water tank, and increases the contact area between the gas and the water, thereby improving the speed and effect of dissolution or chemical reaction of harmful substances.
3. According to the electric heating water-washing type semiconductor tail gas treatment equipment provided by the invention, the first water spraying pipe and the third water spraying pipe are provided with the plurality of unidirectional nozzles, and the unidirectional nozzles have the characteristics of strong directionality and large impact force, can effectively decompose water into fine water mist, and enhance the mixing effect of the water mist and tail gas. The second spray pipe is provided with a plurality of bidirectional nozzles, the bidirectional nozzles can spray leftwards and rightwards, and a left-right staggered spray array is formed, so that tail gas after pyrolysis can enter the water tank from any direction, and uniform and comprehensive water washing effect can be achieved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will be given simply with reference to the accompanying drawings, which are used in the description of the embodiments or the prior art, it being evident that the following description is only one embodiment of the invention, and that other drawings can be obtained from these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an electric heating water-washing type semiconductor tail gas treatment device according to the present invention;
FIG. 2 is a schematic perspective view of a reaction chamber according to the present invention;
FIG. 3 is a schematic view of the front structure of the reaction chamber of the present invention;
FIG. 4 is a cross-sectional view A-A of FIG. 3;
FIG. 5 is a schematic view of the structure of the water tank of the present invention;
FIG. 6 is a schematic diagram of the front structure of the water tank of the present invention;
FIG. 7 is a section B-B of FIG. 6;
FIG. 8 is a schematic view of a first sprinkler tube structure according to the present invention;
FIG. 9 is a schematic view of a second sprinkler tube according to the present invention;
FIG. 10 is a schematic view of a third sprinkler tube according to the present invention;
FIG. 11 is a schematic view of the cooling chamber structure of the present invention;
Fig. 12 is a C-C section view of fig. 11.
In the figure, a 1-air inlet pipe, a 2-main cavity, a 3-reaction cavity, a 4-cooling cavity, a 5-water tank, a 6-gas-liquid separation cavity, 301-a first cavity layer, 302-a second cavity layer, 303-a third cavity layer, 401-a first air inlet, 402-a second air inlet, 403-a vortex cavity, 404-a cooling outer cavity, 405-a cooling inner cavity, 406-a first water inlet, 407-a second water inlet, 408-a spraying port, 409-an upper end face, 501-an inlet pipe, 502-a first spraying pipe, 503-a second spraying pipe, 504-a third spraying pipe, 601-a first exhaust cavity, 602-a second exhaust cavity and 603-an acid exhaust pipe.
Detailed Description
In the following description, it should be understood that the terms "first," "second," and the like are used merely to distinguish one element from another element, and do not require or imply any actual relationship or order between the elements. Indeed the first element could also be termed a second element and vice versa. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a structure, apparatus, or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such structure, apparatus, or device. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a structure, apparatus or device comprising the element. Various embodiments are described herein in a progressive manner, each embodiment focusing on differences from other embodiments, and identical and similar parts between the various embodiments are sufficient to be seen with each other. The terms "longitudinal," "transverse," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like herein refer to an orientation or positional relationship based on that shown in the drawings, merely for ease of description herein and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus are not to be construed as limiting the invention. In the description herein, unless otherwise specified and limited, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, mechanically or electrically coupled, may be in communication with each other within two elements, may be directly coupled, or may be indirectly coupled through an intermediary, as would be apparent to one of ordinary skill in the art. Herein, unless otherwise indicated, the term "plurality" means two or more.
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which are obtained without inventive effort by a person skilled in the art based on the embodiments of the present invention, are within the scope of the present invention.
As shown in fig. 1, the electric heating water washing type semiconductor tail gas treatment equipment comprises an air inlet pipe 1, a main cavity 2, a heating rod, a reaction cavity 3, a cooling cavity 4, a water tank 5 and a gas-liquid separation cavity 6, wherein the air inlet pipe 1 is connected with the main cavity 2, the heating rod (not shown in the figure) is arranged on the main cavity 2 and stretches into the reaction cavity 3, the main cavity 2 is connected with the reaction cavity 3, the lower end of the reaction cavity 3 is connected with the cooling cavity 4, the cooling cavity 4 is connected with the water tank 5, and the water tank 5 is connected with the gas-liquid separation cavity 6; the gas-liquid separation chamber 6 includes a first exhaust chamber 601, a second exhaust chamber 602, and an acid exhaust pipe 603; the first exhaust cavity 601 is fixedly connected with the second exhaust cavity 602 through a flange; the second exhaust chamber 602 is fixedly connected with the acid exhaust pipe 603 through a flange.
Pollutant-containing tail gas discharged from the semiconductor production line enters the main cavity 2 through the air inlet pipe 1. Preferably, the air inlet pipe 1 is internally provided with a pre-filtering part (not shown in the figure) for initially intercepting large particle dust and part of solid impurities. Preferably, the air inlet pipe 1 is made of a material with excellent corrosion resistance, high temperature resistance and aging resistance, such as stainless steel or Teflon, etc., so as to ensure that the exhaust gas possibly containing acid-base substances and organic solvents is not corroded when being contacted for a long time. Preferably, a safety device for preventing the exhaust gas from flowing back, such as a check valve or a one-way valve, is arranged in the air inlet pipe 1, so that the exhaust gas is ensured not to flow back, and the safety and the stability of the production environment are ensured.
In order to facilitate the drainage of condensed water or solid deposits while preventing gas stagnation, the intake pipe 1 is provided with a gradient of 0.3% to 0.5%. The gradient of the air inlet pipe 1 is lower than 0.3%, so that the internal environment of the bent pipe of the air inlet pipe 1 is wet, corrosion of metal parts of the air inlet pipe 1 is accelerated, solid particles are possibly deposited, mechanical abrasion is increased, and the service life of equipment is shortened; the gradient of the air inlet pipe 1 is higher than 0.5%, and the too steep gradient may cause too fast a flow speed of the gas in the pipe, and thus insufficient reaction may occur, reducing the purification efficiency. Preferably, the method comprises the steps of, the intake pipe 1 is provided with a gradient of 0.4%. The gradient of the intake pipe 1 refers to the ratio between the vertical height difference and the horizontal projection length corresponding to the inclination angle between the axis of the pipe of the intake pipe 1 and the horizontal plane. In particular the number of the elements, the slope of the air intake pipe 1 refers to the rising or falling height of the pipe per unit length, so as to ensure that the condensed water in the pipeline can be smoothly discharged without accumulating and blocking, and simultaneously, the condensed water is beneficial to preventing the gas flow from being blocked. The calculation formula is as follows:
Gradient (i) = (H 1-H2)/lx100%
Wherein:
H 1 is the height of the beginning of the pipe;
H 2 is the height of the pipe end;
L is the horizontal projection distance from the beginning to the end of the pipe.
The invention adopts an electric heating mode to generate high temperature, which not only has the advantages of strong controllability and quick response speed, but also is cleaner and more efficient compared with the traditional combustion heating. Harmful substances in the tail gas can undergo a series of chemical reactions such as cracking, oxidation and the like after contacting with high temperature, and toxic and harmful components are converted into a relatively harmless or easy-to-handle form. When the tail gas is preheated and primarily decomposed, the temperature of the tail gas is still higher, and the tail gas needs to be further cooled to meet the requirement of subsequent treatment. The exhaust gas thus continues to flow to the cooling chamber 4, where it is cooled by cooling water, air or other cooling medium, so that the exhaust gas temperature drops to a safe level. Preferably, the cooling is performed by cooling water.
As shown in fig. 11-12, preferably, the cooling cavity 4 includes a cooling outer cavity 404 and a cooling inner cavity 405, an upper end surface 409 is disposed on top of the cooling outer cavity 404, and a gap is formed between the upper end surface 409 and the top of the cooling inner cavity 405; the cooling outer cavity 404 and the cooling inner cavity 405 form a vortex cavity 403 for containing cooling water, the cooling water in the vortex cavity 403 flows down along the inner wall of the cooling inner cavity 405 in a water curtain manner through the gap, and thus, the design of the water curtain flow is adopted, on one hand, in order to increase the contact area and the contact time between the cooling water and the tail gas to be cooled, so that the cooling efficiency is improved; on the other hand, the cooling water can dissolve the water-soluble tail gas and flow into the water tank 5.
Preferably, the cooling outer cavity 404 is provided with a first water inlet 406 and a second water inlet 407, the vortex cavity 403 is a spiral channel, the first water inlet 406 is disposed at a start point of the spiral channel, and the second water inlet 407 is disposed at an end point of the spiral channel. The vortex cavity 403 is internally designed into a spiral channel, the first water inlet 406 is arranged at the starting point of the spiral channel, along with forward pushing of water flow, the first water inlet 406 is continuously contacted with the cavity wall of the cooling cavity 405 and absorbs heat in the spiral rising process, the second water inlet 407 is arranged at the end point of the spiral channel, and finally flows out from the second water inlet 407 at the end point of the spiral. Preferably, the first water inlet 406 and the second water inlet 407 are communicated with the water tank 5, and the cooling water in the vortex cavity 403 is from the water tank 5, so that the design has a good energy-saving effect.
Preferably, the caliber of the first air inlet 401 is smaller than that of the second air inlet 402, and by adjusting the caliber of the first air inlet 401 and the caliber of the second air inlet 402, the pressure distribution of the tail gas is optimized, the tail gas is prevented from flowing too fast, and the cooling water flowing out of the vortex cavity 403 can be fully contacted with the tail gas.
Preferably, a spray port 408 is provided below the cooling inner cavity 405; the spray ports 408 are at an angle of 30-60 degrees to the axis of the cooling cavity 405. Preferably, the spray ports 408 are at an angle of 30 ° to the axis of the cooling cavity 405. The spray ports 408 spray water mist downwards, the contact area between the sprayed water mist and the tail gas can be increased by spraying the water mist, the mass transfer efficiency is improved, the water mist can be directly contacted with the rising high-temperature tail gas, the temperature of the tail gas is rapidly reduced through heat exchange, heat can be taken away, and part of harmful gases (such as acid gas, alkaline gas or volatile organic compounds) in the tail gas can be dissolved in water through physical adsorption, chemical reaction and other modes and flow into the water tank 5, so that the purpose of purifying the tail gas is realized.
Preferably, the gas-liquid separation chamber 6 includes a first exhaust chamber 601, a second exhaust chamber 602, and an acid exhaust pipe 603; the first exhaust cavity 601 is fixedly connected with the second exhaust cavity 602 through a flange; the second exhaust chamber 602 is fixedly connected with the acid exhaust pipe 603 through a flange. The first exhaust chamber 601 is located at the start of the gas-liquid separation process and functions to primarily separate most of the water from the tail gas after the water tank 5 has been washed. Since the tail gas after washing mixes a large number of minute droplets, these droplets are influenced by gravity, inertial force, wall effect, and the like to settle after entering the first exhaust chamber 601. To improve the separation efficiency, the inside of the first exhaust chamber 601 is generally designed with a water-vapor separation structure, such as a baffle or cyclone, so as to promote sufficient contact and separation of the gas and the liquid. The second exhaust chamber 602 is provided with a high efficiency filter fiber mesh to trap finer droplets and ensure the thoroughness of the gas-liquid separation. The gas sufficiently separated through the second exhaust chamber 602 proceeds and finally passes through the acid exhaust pipe 603. In the actual operation process, if the harmful substances in the tail gas react with water to generate acidic substances, the separated liquid is safely and properly collected and treated through the acid discharge pipe 603. The acid discharge pipe 603 is made of a duplex stainless steel material, and the tail end of the acid discharge pipe 603 is connected to a special acid wastewater treatment device, such as a neutralization tank or a sedimentation tank, so as to achieve the purpose of harmless treatment.
As shown in fig. 2-4, preferably, the reaction chamber 3 is provided with a first cavity layer 301, a second cavity layer 302 and a third cavity layer 303 sequentially from outside to inside, a sealed inner cavity is formed between the first cavity layer 301 and the second cavity layer 302, and circulating cooling water enters the sealed inner cavity under the action of a circulating pump (not shown in the drawing). Specifically, the first cavity layer 301, the second cavity layer 302 and the third cavity layer 303 have the functions of heat insulation and high temperature resistance, and the third cavity layer 303 has the anti-corrosion performance. The three-layer structure of the first cavity layer 301, the second cavity layer 302 and the third cavity layer 303 is beneficial to uniform distribution of heat, high-efficiency heat insulation effect is also beneficial to realization, and heat loss and equipment overheating are avoided. A closed circulating cooling water cavity is formed between the first cavity layer 301 and the second cavity layer 302. In the inner cavity, the circulating pump drives the cooling water with low temperature to continuously flow through, and the cooling water is indirectly contacted with the tail gas which is heated to the high temperature of 600-1000 ℃ by the electric heating rod, so as to perform preliminary heat exchange. The cooling water absorbs part of heat of the tail gas, so that the inner wall surface of the third cavity layer 303 of the reaction cavity 3 is effectively protected from being influenced by the excessive temperature. Preferably, the third cavity layer 303 is coated with a high temperature and corrosion resistant material. The inner wall of the third cavity layer 303 is coated with a ceramic coating, which is a zirconia, silicon nitride or silicon carbide coating, preferably a silicon carbide coating, which has excellent oxidation resistance, corrosion resistance and wear resistance, and also has excellent chemical stability, and can be kept stable in an environment up to 1000 ℃ or more.
As shown in fig. 5 to 10, it is preferable that the water tank 5 is provided with a water inlet pipe 501, a first water spray pipe 502, a second water spray pipe 503 and a third water spray pipe 504, and the water inlet pipe 501 communicates with the first water spray pipe 502, the second water spray pipe 503 and the third water spray pipe 504, respectively. The inlet pipe 501 serves as a water source access point to introduce clean circulating water or fresh water into the tank 5 and further distributes the water to the first water spray pipe 502, the second water spray pipe 503 and the third water spray pipe 504.
Preferably, the first water spraying pipe 502 and the third water spraying pipe 504 are horizontally arranged and mutually perpendicular; the second water jet pipe 503 and the third water jet pipe 504 are horizontally arranged and are perpendicular to each other. The first water spraying pipe 502, the second water spraying pipe 503 and the third water spraying pipe 504 form complementary coverage areas in space, so that on one hand, the layout can also effectively avoid spraying overlapping and energy waste caused by too close distance between the water spraying pipes, and ensure that the independent functions of the water spraying pipes are fully exerted; on the other hand, the mutually perpendicular design is also beneficial to generating turbulence and mixing effect in the water washing process, promoting the full mixing between gas and liquid, maximally improving the gas-liquid contact area and enhancing the speed and degree of chemical reaction. Thus, the first spray pipe 502, the second spray pipe 503 and the third spray pipe 504 are in the same plane, so as to form a three-dimensional crossed spray network. The three-dimensional layout ensures that the tail gas can contact spray water in all directions and angles after entering the water tank 5, and increases the contact area between gas and water, thereby improving the dissolution speed and effect of harmful substances or chemical reaction.
Preferably, the first, second and third water jets 502, 503 and 504 are lower in height than the upper cover plate of the water tank 5. The design is beneficial to the tail gas to fully contact with the sprayed water drops in the rising process, and is also beneficial to preventing the water mist sprayed at high speed from escaping from the water tank 5, so that water resource waste and environmental influence are caused.
Preferably, a plurality of nozzles are provided on the first, second and third water spray pipes 502, 503 and 504.
Preferably, the first water spraying pipe 502 and the third water spraying pipe 504 are provided with a plurality of unidirectional nozzles, preferably, the number of unidirectional nozzles is two or three, and the unidirectional nozzles have the characteristics of strong directionality and large impact force, so that water can be effectively decomposed into fine water mist, and the mixing effect of the water mist and tail gas is enhanced. The second water spraying pipe 503 is provided with a plurality of bidirectional nozzles, preferably, the number of the bidirectional nozzles is two, the bidirectional nozzles can spray leftwards and rightwards, and a left-right staggered spray array is formed, so that the tail gas after pyrolysis can be subjected to uniform and comprehensive water washing no matter which direction enters the water tank 5.
The principle of the invention is as follows:
Pyrolysis of tail gas: the pretreatment semiconductor tail gas enters through the air inlet pipe 1, then enters the main cavity 2, then enters the reaction cavity 3, the heating rod in the reaction cavity 3 carries out electric heating pyrolysis on the tail gas, the reaction cavity 3 is sequentially provided with a first cavity layer 301, a second cavity layer 302 and a third cavity layer 303 from outside to inside, a sealed inner cavity is formed between the first cavity layer 301 and the second cavity layer 302, circulating cooling water enters into the sealed inner cavity under the action of the circulating pump, and the tail gas enters the cooling cavity 4 after being cooled by the circulating cooling water and then flows into the water tank 5.
Washing tail gas: the tail gas after pyrolysis enters the water tank 5 through the cooling cavity 4, contacts with water in the water tank 5, and is treated to be dissolved by the water or generate chemical reaction to generate harmful gas of soluble salts. The first water spraying pipe 502 and the third water spraying pipe 504 are horizontally arranged and mutually perpendicular, the second water spraying pipe 503 and the third water spraying pipe 504 are horizontally arranged and mutually perpendicular, the three-dimensional layout ensures that tail gas can contact spray water in all directions and at multiple angles after entering the water tank 5, the contact area between the gas and the water is increased, and accordingly the speed and the effect of harmful substance dissolution or chemical reaction are improved. The unidirectional nozzles arranged on the first water spraying pipe 502 and the third water spraying pipe 504 can effectively decompose water into fine water mist, so that the effect of mixing the fine water mist with tail gas is enhanced; the bidirectional nozzle arranged on the second water spraying pipe 503 can spray leftwards and rightwards, and form a left-right staggered spray array, so that the tail gas after pyrolysis can be uniformly and comprehensively washed no matter which direction the tail gas enters the water tank 5.
And (3) water vapor separation of tail gas: the tail gas after water washing is subjected to water-vapor separation through a gas-liquid separation cavity 6. The exhaust gas is discharged through the first exhaust gas chamber 601, the second exhaust gas chamber 602, and the acid discharge pipe 603 in this order.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The electric heating water washing type semiconductor tail gas treatment device is characterized by comprising an air inlet pipe (1), a main cavity (2), a heating rod, a reaction cavity (3), a cooling cavity (4), a water tank (5) and a gas-liquid separation cavity (6), wherein the air inlet pipe (1) is connected with the main cavity (2), the heating rod is arranged on the main cavity (2) and stretches into the reaction cavity (3), the main cavity (2) is connected with the reaction cavity (3), the lower end of the reaction cavity (3) is connected with the cooling cavity (4), the cooling cavity (4) is connected with the water tank (5), and the water tank (5) is connected with the gas-liquid separation cavity (6);
The gas-liquid separation cavity (6) comprises a first exhaust cavity (601), a second exhaust cavity (602) and an acid discharge pipe (603); the first exhaust cavity (601) is fixedly connected with the second exhaust cavity (602) through a flange; the second exhaust cavity (602) is fixedly connected with the acid exhaust pipe (603) through a flange.
2. The electric heating water-washing type semiconductor tail gas treatment device according to claim 1, wherein the reaction cavity (3) is sequentially provided with a first cavity layer (301), a second cavity layer (302) and a third cavity layer (303) from outside to inside, a sealed inner cavity is formed between the first cavity layer (301) and the second cavity layer (302), and circulating cooling water enters the sealed inner cavity under the action of a circulating pump.
3. The electrically heated water-washable semiconductor exhaust gas treatment device according to claim 2, characterized in that the interior of the third cavity layer (303) is coated with a high temperature and corrosion resistant material.
4. An electrically heated water-washable semiconductor exhaust gas treatment device according to claim 3, characterized in that the water tank (5) is provided with a water inlet pipe (501), a first water spray pipe (502), a second water spray pipe (503) and a third water spray pipe (504), the water inlet pipe (501) being in communication with the first water spray pipe (502), the second water spray pipe (503) and the third water spray pipe (504), respectively.
5. The electrically heated water-washable semiconductor exhaust gas treatment device of claim 4, wherein the first water spray (502) and the third water spray (504) are horizontally disposed and perpendicular to each other; the second water spraying pipe (503) and the third water spraying pipe (504) are horizontally arranged and are mutually vertical; the first water spraying pipe (502), the second water spraying pipe (503) and the third water spraying pipe (504) are arranged in the same plane.
6. The electrically heated water-washable semiconductor exhaust gas treatment device of claim 4, wherein the first (502), second (503) and third (504) water spray pipes are lower in height than the upper cover plate of the water tank (5).
7. The electrically heated water washable semiconductor exhaust gas treatment device of claim 6, wherein a plurality of nozzles are disposed on the first (502), second (503) and third (504) water spray pipes.
8. The electrically heated water-washable semiconductor tail gas treatment device according to claim 1, characterized in that the cooling cavity (4) comprises a cooling outer cavity (404) and a cooling inner cavity (405), the top of the cooling outer cavity (404) is provided with an upper end surface (409), and the upper end surface (409) has a gap with the top of the cooling inner cavity (405); the cooling outer cavity (404) and the cooling inner cavity (405) form a vortex cavity (403) for containing cooling water, and the cooling water in the vortex cavity (403) flows down along the inner wall of the cooling inner cavity (405) in a water curtain manner through the gap.
9. The electrically heated water-washable semiconductor exhaust gas treatment device of claim 8, wherein the cooling outer cavity (404) is provided with a first water inlet (406) and a second water inlet (407), the vortex cavity (403) is a spiral channel, the first water inlet (406) is provided at a start point of the spiral channel, and the second water inlet (407) is provided at an end point of the spiral channel.
10. The electrical heating water-washing type semiconductor tail gas treatment equipment according to claim 8, wherein a spray port (408) is arranged below the cooling inner cavity (405); the spray opening (408) forms an included angle of 30-60 degrees with the axis of the cooling inner cavity (405).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410325928.0A CN118001914A (en) | 2024-03-21 | 2024-03-21 | Electric heating water-washing type semiconductor tail gas treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410325928.0A CN118001914A (en) | 2024-03-21 | 2024-03-21 | Electric heating water-washing type semiconductor tail gas treatment equipment |
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| CN118001914A true CN118001914A (en) | 2024-05-10 |
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|---|---|---|---|
| CN202410325928.0A Pending CN118001914A (en) | 2024-03-21 | 2024-03-21 | Electric heating water-washing type semiconductor tail gas treatment equipment |
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| Country | Link |
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| CN (1) | CN118001914A (en) |
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- 2024-03-21 CN CN202410325928.0A patent/CN118001914A/en active Pending
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