CN117995847A

CN117995847A - Display device and display panel

Info

Publication number: CN117995847A
Application number: CN202310691762.XA
Authority: CN
Inventors: 戴亚翔; 袁一程; 林辰余
Original assignee: Novatek Microelectronics Corp
Current assignee: Novatek Microelectronics Corp
Priority date: 2022-11-03
Filing date: 2023-06-12
Publication date: 2024-05-07

Abstract

The invention provides a display device and a display panel. The display device includes a display panel and a reading circuit. The display panel comprises an upper substrate, a lower substrate, a thin film transistor layer and a photosensitive circuit. The thin film transistor layer is disposed between the upper substrate and the lower substrate. A plurality of thin film transistors of a pixel array of a display panel are arranged in a thin film transistor layer. The photosensitive circuit is configured in the thin film transistor layer to sense ambient light. The reading circuit is coupled to the photosensitive circuit to read the sensing result.

Description

Display device and display panel

Technical Field

The present invention relates to an electronic device, and more particularly, to a display device and a display panel.

Background

The color temperature sensor uses the same circuit architecture as the ambient light sensor (ambient light sensor, ALS), but the color temperature sensor would cover a color filter (color filter) film. Different color filters are used for sensing different color lights, and then a back-end processing circuit is used for carrying out integration operation on the sensing values of the different color lights to obtain a color temperature value. Generally, an ambient light sensor (or a color temperature sensor) includes a PIN photodiode (photo diode). The compatibility of the device process of the PIN photodiode and the display panel process is quite low. In the conventional display device, the ambient light sensor (or the color temperature sensor) and the display panel are separate components. An ambient light sensor (color temperature sensor) is disposed on the back surface of the display panel. Ambient light may be irradiated to an ambient light sensor (color temperature sensor) through a display panel. Because ambient light needs to pass through all layers of the display panel, the intensity of the light reaching the sensor is too Low, which is a Low signal display transmittance (Low SIGNAL DISPLAY transmission) problem.

A second problem with existing ambient light sensors (color temperature sensors) is display optical crosstalk back emission (Optical crosstalk Display back-emission). The image light displayed on the display panel may be reflected by a portion of the layer surface of the display panel (i.e. back reflection), resulting in optical crosstalk.

Furthermore, the operation of existing ambient light sensors (color temperature sensors) has three working phases: reset charge (RESET CHARGING), illumination (exposure), and electrical signal acquisition (ELECTRIC SIGNAL collection). First, a high voltage is applied to the sensor circuit during the reset charging phase, then the illumination phase is passed, and finally the acquisition of the electrical signal is performed. This prior art sensor requires processing the sensing result over an integration time, resulting in a longer read time.

It should be noted that the content of the "background art" section is intended to aid in understanding the present invention. Some (or all) of the content disclosed in the "background" section may not be known to those of skill in the art. The disclosure in the background section is not presented to persons skilled in the art prior to the application of the invention.

Disclosure of Invention

The invention provides a display device and a display panel for sensing ambient light.

In an embodiment according to the present invention, the display panel includes an upper substrate, a lower substrate, a thin film transistor (thin film transistor, TFT) layer, and a photosensitive circuit. The thin film transistor layer is disposed between the upper substrate and the lower substrate. A plurality of thin film transistors of a pixel array of a display panel are arranged in a thin film transistor layer. The photosensitive circuit is configured in the thin film transistor layer to sense ambient light.

In an embodiment of the present invention, the display device includes a display panel and a reading circuit. The display panel comprises an upper substrate, a lower substrate, a thin film transistor layer and a photosensitive circuit. The thin film transistor layer is disposed between the upper substrate and the lower substrate. A plurality of thin film transistors of a pixel array of a display panel are arranged in a thin film transistor layer. The photosensitive circuit is configured in the thin film transistor layer to sense ambient light. The reading circuit is coupled to the photosensitive circuit to read the sensing result.

Based on the above, the display panel according to the embodiments of the present invention has a photosensitive circuit. The light sensing circuit is embedded in the thin film transistor layer of the display panel, so that ambient light can reach the light sensing circuit through a few layers of the display panel, thereby improving the problem of Low signal display transmittance (Low SIGNAL DISPLAY transmittance). Furthermore, the sensing operation of the photosensitive circuit does not need to be divided into three working phases of reset charging (RESET CHARGING), illumination (exposure) and electric signal collection (ELECTRIC SIGNAL collection), so that the reading time can be shortened.

Drawings

Fig. 1 is a schematic diagram of a display device according to an embodiment of the invention.

FIG. 2 is a circuit block diagram of a photosensitive circuit according to an embodiment of the present invention.

Fig. 3 is a schematic cross-sectional view of a gap-type thin film transistor according to an embodiment of the invention.

FIG. 4 is a circuit block diagram of a photosensitive circuit according to another embodiment of the present invention.

FIG. 5 is a circuit block diagram of a read circuit according to an embodiment of the invention.

FIG. 6 is a circuit block diagram of a read circuit according to another embodiment of the invention.

FIG. 7 is a circuit block diagram of a reading circuit according to another embodiment of the invention.

Fig. 8 is a schematic circuit block diagram of a load according to an embodiment of the invention.

Fig. 9 is a schematic circuit block diagram of a load 133 according to another embodiment of the invention.

Fig. 10 is a schematic circuit block diagram of a load according to another embodiment of the invention.

Description of the reference numerals

10: Ambient light

100: Display device

110: Display panel

111: Cover Glass (CG)

112: Polarizing film

113: Encapsulation layer

114: Color Filter (CF) film

115: Thin Film Transistor (TFT) layers

116: Polyimide (PI) film

117: Polyester (PET) film

120: Reading circuit

130: Photosensitive circuit

131. 132: Photosensitive assembly

133: Load(s)

300: Gap type thin film transistor

Amp5, amp8: amplifier

CM6, CM7: current mirror

CS6, CS71, CS72: current source

D3: drain electrode

And G3: grid electrode

GP3: gap of

Ibias: bias current

Iphone: photocurrent of photocurrent

Lch3: channel length

Lg3: length of

N3, N4, N5, P8, P9: transistor with a high-voltage power supply

R5, R6, R7, R10: resistor

S3: source electrode

Vb1, vb2: bias voltage

Vctr: control voltage

Vdda, vpower: power voltage

Vh, vref, vss: reference voltage

Vout5, vout6, vout7, vout8: output voltage

Vphoto: photovoltage (photovoltaic)

Detailed Description

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

The term "coupled" as used throughout this specification (including the claims) may refer to any direct or indirect connection. For example, if a first device couples (or connects) to a second device, that connection may be through a direct connection, or through an indirect connection via other devices and connections. The terms first, second and the like in the description (including the claims) are used for naming components or distinguishing between different embodiments or ranges and are not used for limiting the number of components, either upper or lower, or the order of the components. In addition, wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts. The components/elements/steps in different embodiments using the same reference numerals or using the same terminology may be referred to with respect to each other.

The following embodiments will describe a display panel embedded with a photosensitive circuit. The photosensitive circuit uses a high photosensitive current component. The light sensing circuit may act as an ambient light sensor (ambient light sensor, ALS) without a color filter film covering the light sensing circuit. In case the colored filter membrane covers the light sensing circuit, the light sensing circuit may act as a color temperature sensor.

Fig. 1 is a schematic diagram of a display device 100 according to an embodiment of the invention. The display device 100 includes a display panel 110 and a reading circuit 120. Fig. 1 is a schematic cross-sectional view of a display panel 110. The display panel 110 includes an upper substrate, a lower substrate, a thin film transistor (thin film transistor, TFT) layer 115, and a light sensing circuit 130. The TFT layer 115 is disposed between the upper and lower substrates, and a plurality of thin film transistors (not shown) of a pixel array of the display panel 110 are disposed in the TFT layer 115. The specific structure of the display panel 110 may be determined according to practical design. Taking the display panel 110 shown in fig. 1 as an example, the upper substrate of the display panel 110 may include a Cover Glass (CG) 111, and the lower substrate of the display panel 110 may include a Polyimide (PI) film 116 and a Polyester (PET) film 117.PI film 116 may act as an alignment film. In the embodiment shown in fig. 1, the display panel 110 may further include a polarizing (polarizer) film 112, an encapsulation (encapsulation) layer 113, and a Color Filter (CF) film 114. The polarizing film 112 is disposed between the cover glass 111 (upper substrate) and the TFT layer 115. The CF film 114 is disposed between the polarizing film 112 and the TFT layer 115.

The photosensitive circuit 130 is configured in the TFT layer 115 of the display panel 110 to sense the ambient light 10. Based on the actual design, the photosensitive circuit 130 is disposed at an edge portion or other positions of the display panel 110. The reading circuit 120 is electrically coupled to the photosensitive circuit 130 to read the sensing result of the photosensitive circuit 130. In some embodiments, the sensing result of the photosensitive circuit 130 may be a photocurrent responsive to the ambient light 10 (e.g., the stronger the intensity of the ambient light 10, the greater the photocurrent). In some embodiments, the sensing result of the photosensitive circuit 130 may be a photovoltage responsive to the ambient light 10 (e.g., the stronger the intensity of the ambient light 10, the smaller the photovoltage).

In summary, the photosensitive circuit 130 of the present embodiment is embedded in the thin film transistor layer 115 of the display panel 110. Therefore, the ambient light 10 can reach the photosensitive circuit 130 through a few layers of the display panel 110 (the ambient light 10 does not need to pass through each layer of the display panel 110), thereby improving the Low signal display transmittance (Low SIGNAL DISPLAY transmittance) problem.

Fig. 2 is a circuit block diagram of a photosensitive circuit 130 according to an embodiment of the present invention. The photosensitive circuit 130 shown in fig. 2 can be used as one of the embodiments of the photosensitive circuit 130 shown in fig. 1. In the embodiment shown in fig. 2, the photosensitive circuit 130 includes a photosensitive assembly 131. The first and second terminals of the photosensitive element 131 are coupled to the reading circuit 120 and the reference voltage Vref, respectively. The level of the reference voltage Vref may be set according to an actual design. The photosensitive element 131 can sense the ambient light 10 to determine the photo current Iphoto flowing through the photosensitive element 131. The reading circuit 120 reads the photo current Iphoto of the photosensitive element 131 to obtain the intensity of the ambient light 10. The photocurrent Iphoto may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto (and vice versa).

Based on the actual design, the photosensitive element 131 may be any photosensitive element compatible with the process of the display panel 100 (particularly, the process of the TFT layer 115). For example, in some embodiments, the photosensitive component 131 may be a photosensitive thin film transistor. The drain and source of the photo-sensing thin film transistor are coupled to the read circuit 120 and the reference voltage Vref, respectively. The gate of the photosensitive thin film transistor receives a bias voltage. The different bias voltages may determine the "relationship between the intensity of ambient light 10 and the photocurrent Iphoto" of the photosensitive thin film transistor. The bias voltage may be set according to an actual design. In other embodiments, the photosensitive member 131 may be a Silicon-rich oxide (SRO) member. In still other embodiments, the photosensitive member 131 may be a gap-type thin film transistor (gap-type TFT). The drain and the source of the gap-type thin film transistor are coupled to the read circuit 120 and the reference voltage Vref, respectively. The gate of the gap-type thin film transistor receives the bias voltage. The gate length of the gap-type thin film transistor is smaller than the channel length between the source and the drain of the gap-type thin film transistor.

Fig. 3 is a schematic cross-sectional view of a gap-type thin film transistor 300 according to an embodiment of the invention. Fig. 3 shows a gate G3, a source S3 and a drain D3 of the gap-type thin film transistor 300. The length Lg3 of the gate electrode G3 of the gap-type thin film transistor 300 is smaller than the channel length Lch3 between the source electrode S3 and the drain electrode D3 of the gap-type thin film transistor 300. That is, the gap type thin film transistor 300 has a gap GP3 between the gate electrode G3 and the drain electrode D3. In the on region of the drain current versus gate voltage characteristic curve, the drain current of the gap-type thin film transistor 300 increases with the intensity of the ambient light 10, and exhibits good light-emitting characteristics. When the gate electrode G3 is negative voltage, the gap-type thin film transistor 300 is turned off. The gap-type thin film transistor 300 is compatible with the process of the display panel 100 (especially the process of the TFT layer 115), and can be a good photosensitive device.

Fig. 4 is a circuit block diagram of a photosensitive circuit 130 according to another embodiment of the invention. The photosensitive circuit 130 shown in fig. 4 can be used as one of the embodiments of the photosensitive circuit 130 shown in fig. 1. In the embodiment shown in fig. 4, the photosensitive circuit 130 includes a photosensitive assembly 132 and a load 133. Based on the actual design, the photosensitive element 132 may be any photosensitive element compatible with the process of the display panel 100 (especially the process of the TFT layer 115), and the load 133 may be any load element compatible with the process of the display panel 100 (especially the process of the TFT layer 115). The photosensitive element 132 shown in fig. 4 can refer to the related description of the photosensitive element 131 shown in fig. 3 and so on, and thus will not be described in detail herein.

The first and second terminals of the photosensitive element 132 are coupled to the reading circuit 120 and the reference voltage Vref, respectively. The photosensitive element 132 can sense the ambient light 10 to determine the photo current Iphoto flowing through the photosensitive element 132. A first terminal of the load 133 is coupled to the power voltage Vpower. The levels of the reference voltage Vref and the power voltage Vpower may be set according to actual designs. A second terminal of the load 133 is coupled to the photosensitive element 132 to convert the photocurrent Iphoto into a photovoltage Vphoto. The reading circuit 120 reads the photovoltage Vphoto to obtain the intensity of the ambient light 10. The photocurrent Iphoto may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto, such that the smaller the photovoltage Vphoto (and vice versa).

In summary, the photosensitive element 132 (or 131) can reflect the intensity of the ambient light 10 in real time on the photocurrent Iphoto. Therefore, the sensing operation of the photosensitive circuit 130 need not be divided into three working phases of reset charging (RESET CHARGING), illumination (exposure), and electrical signal acquisition (ELECTRIC SIGNAL collection). Accordingly, the time for reading the photosensitive member 132 shown in fig. 4 (or the photosensitive member 131 shown in fig. 2) can be shortened as compared with the operation process of the existing ambient light sensor (color temperature sensor).

FIG. 5 is a circuit block diagram of a read circuit 120 according to an embodiment of the invention. The photosensitive element 131 and the reading circuit 120 shown in fig. 5 can be used as one of the embodiments of the photosensitive element 131 and the reading circuit 120 shown in fig. 2. The gate of the photosensitive element 131 receives the bias voltage Vb1. The different bias voltages Vb1 can determine the "relationship between the intensity of the ambient light 10 and the photocurrent Iphoto" of the photosensitive element 131. The bias voltage Vb1 may be set according to an actual design.

In the embodiment shown in fig. 5, the read circuit 120 includes an amplifier Amp5 and a resistor R5. A first input (e.g., a non-inverting input) of the amplifier Amp5 is coupled to the reference voltage Vh. The level of the reference voltage Vh may be set according to an actual design. A second input (e.g., an inverting input) of the amplifier Amp5 is coupled to the photosensitive element 131. A first terminal of the resistor R5 is coupled to a second input terminal of the amplifier Amp 5. The second terminal of the resistor R5 is coupled to the output terminal of the amplifier Amp 5. The output voltage Vout5 of the amplifier Amp5 may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto, such that the greater the output voltage Vout5 (and vice versa).

Fig. 6 is a circuit block diagram of a reading circuit 120 according to another embodiment of the invention. The photosensitive element 131 and the reading circuit 120 shown in fig. 6 can be used as one of the embodiments of the photosensitive element 131 and the reading circuit 120 shown in fig. 2. In the embodiment shown in fig. 6, the read circuit 120 includes a current source CS6, a resistor R6, and a current mirror (current mirror) CM6. The current source CS6 may provide a bias current Ibias. The first end of the resistor R6 is coupled to the power voltage Vdda. The levels of the power voltage Vdda and the reference voltage Vss shown in fig. 6 can be set according to practical designs. The main current (master current) end of the current mirror CM6 is coupled to the current source CS6 and the photosensitive element 131. The slave current (slave current) end of the current mirror CM6 is coupled to the second end of the resistor R6. The output voltage Vout6 of the second terminal of the resistor R6 may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto, such that the greater the output voltage Vout6 (and vice versa).

Fig. 7 is a circuit block diagram of a reading circuit 120 according to another embodiment of the invention. The photosensitive element 131 and the reading circuit 120 shown in fig. 7 can be used as one of the embodiments of the photosensitive element 131 and the reading circuit 120 shown in fig. 2. In the embodiment shown in fig. 7, the read circuit 120 includes a current source CS71, a current source CS72, a current mirror CM7, a transistor N3, a transistor N4, a transistor N5, and a resistor R7. A first end of the main current path of the current mirror CM7 is coupled to the current source CS72. The first end of the slave current path of the current mirror CM7 is coupled to the current source CS71. The second end of the slave current path of the current mirror CM7 is coupled to the photosensitive device 131. A first terminal (e.g., drain) of the transistor N4 is coupled to a second terminal of the main current path of the current mirror CM 7. A second terminal (e.g., source) of the transistor N4 is coupled to the reference voltage Vss. The level of the reference voltage Vss shown in fig. 7 may be set according to an actual design. The control terminal (e.g., gate) of the transistor N4 is coupled to the control voltage Vctr. The level of the control voltage Vctr shown in fig. 7 may be set according to an actual design. The first terminal (e.g., drain) of the transistor N3 is coupled to the second terminal of the slave current path of the current mirror CM 7. A second terminal (e.g., source) of the transistor N3 is coupled to the reference voltage Vss. The control terminal (e.g., gate) of the transistor N3 is coupled to the control voltage Vctr. The first end of the resistor R7 is coupled to the power voltage Vdda. The levels of the control voltage Vctr and the power voltage Vdda shown in fig. 7 can be set according to practical designs. A first terminal (e.g., drain) of the transistor N5 is coupled to a second terminal of the resistor R7. A second terminal (e.g., source) of transistor N5 is coupled to a second terminal of the main current path of current mirror CM 7. The control terminal (e.g., gate) of the transistor N5 is coupled to the first terminal of the slave current path of the current mirror CM 7. The output voltage Vout7 of the second terminal of the resistor R7 may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto, such that the greater the output voltage Vout7 (and vice versa).

Fig. 8 is a schematic circuit block diagram of a load 133 according to an embodiment of the invention. The photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 8 can be used as one of the embodiments of the photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 4. In the embodiment shown in fig. 8, the load 133 includes a transistor P8. A first terminal (e.g., source) of the transistor P8 is coupled to the power voltage Vpower. The level of the power voltage Vpower shown in fig. 8 may be set according to an actual design. A second terminal (e.g., drain) of the transistor P8 is coupled to the photosensitive element 120. The control terminal (e.g., gate) of the transistor P8 is coupled to the second terminal of the transistor P8. The gate of the photosensitive element 132 receives the bias voltage Vb1. The different bias voltages Vb1 can determine the "relationship between the intensity of the ambient light 10 and the photocurrent Iphoto" of the photosensitive element 132. The bias voltage Vb1 may be set according to an actual design.

In the embodiment shown in fig. 8, the read circuit 120 includes an amplifier Amp8. A first input (e.g., a non-inverting input) of the amplifier Amp8 is coupled to the photosensitive element 132 and the load 1333 for receiving the photo voltage Vphoto. A second input (e.g., an inverting input) of the amplifier Amp8 is coupled to an output of the amplifier Amp8. The output voltage Vout8 of the amplifier Amp8 may be responsive to the intensity of the ambient light 10. For example, the stronger the intensity of the ambient light 10, the greater the photocurrent Iphoto (the smaller the photovoltage Vphoto), such that the smaller the output voltage Vout8 (and vice versa).

Fig. 9 is a schematic circuit block diagram of a load 133 according to another embodiment of the invention. The photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 9 can be used as one of the embodiments of the photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 4. The photosensitive element 132 and the reading circuit 120 shown in fig. 9 can be described with reference to the photosensitive element 132 and the reading circuit 120 shown in fig. 8, and thus will not be described again. In the embodiment shown in fig. 9, the load 133 includes a transistor P9. A first terminal (e.g., source) of the transistor P9 is coupled to the power voltage Vpower. The level of the power voltage Vpower shown in fig. 9 may be set according to an actual design. A second terminal (e.g., drain) of the transistor P9 is coupled to the photosensitive element 120. The control terminal (e.g., gate) of the transistor P9 is coupled to the bias voltage Vb2. The different bias voltages Vb2 can determine the conversion relationship between the photo voltage Vphoto and the photo current Iphoto. The bias voltage Vb2 may be set according to an actual design. For example, in some embodiments, the level of bias voltage Vb2 may be the same as the level of bias voltage Vb 1.

Fig. 10 is a schematic circuit block diagram of a load 133 according to another embodiment of the invention. The photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 10 can be used as one of the embodiments of the photosensitive element 132, the load 133 and the reading circuit 120 shown in fig. 4. The photosensitive element 132 and the reading circuit 120 shown in fig. 10 can be described with reference to the photosensitive element 132 and the reading circuit 120 shown in fig. 8, and thus will not be described again. In the embodiment shown in fig. 10, the load 133 includes a resistor R10. The first terminal of the resistor R10 is coupled to the power voltage Vpower. The level of the power voltage Vpower shown in fig. 10 may be set according to an actual design. The second terminal of the resistor R10 is coupled to the photosensitive element 120 and the reading circuit 120. The resistance value of the resistor R10 may be set according to actual design. The different resistances of the resistor R10 may determine the "conversion relationship between the photo voltage Vphoto and the photo current Iphoto".

In summary, the display panel 110 of the above embodiments has the photosensitive circuit 130. The light sensing circuit 130 is embedded in the thin film transistor layer 115 of the display panel 110, so that the ambient light 10 can reach the light sensing circuit 130 through a few layers of the display panel 110, thereby improving the Low signal display transmittance (Low SIGNAL DISPLAY transmittance) problem. Furthermore, the photosensitive element 132 (or 131) of the photosensitive circuit 130 can reflect the intensity of the ambient light 10 in real time on the photocurrent Iphoto. Therefore, the sensing operation of the photosensitive circuit 130 need not be divided into three working phases of recharging (RESET CHARGING), illumination (exposure), and electrical signal collection (ELECTRIC SIGNAL collection). Accordingly, the time for reading the photosensitive member 132 (or 131) can be shortened compared to the operation process of the existing ambient light sensor (color temperature sensor).

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims

1. A display panel, the display panel comprising:

An upper substrate;

A lower substrate;

A thin film transistor layer disposed between the upper substrate and the lower substrate, wherein a plurality of thin film transistors of a pixel array of the display panel are disposed in the thin film transistor layer; and

And the photosensitive circuit is arranged in the thin film transistor layer and is used for sensing ambient light.

2. The display panel of claim 1, wherein the upper substrate comprises a cover glass and the lower substrate comprises a polyimide film and a polyester film.

3. The display panel of claim 1, further comprising:

And a polarizing film disposed between the upper substrate and the thin film transistor layer.

4. The display panel of claim 3, further comprising:

And a color filter layer disposed between the polarizing film and the thin film transistor layer.

5. The display panel according to claim 1, wherein the light sensing circuit is disposed at an edge portion of the display panel.

6. The display panel of claim 1, wherein the photosensitive circuit comprises:

The light sensing component is used for sensing the ambient light to determine the photocurrent flowing through the light sensing component, and the reading circuit reads the photocurrent of the light sensing component to obtain the ambient light.

7. The display panel of claim 1, wherein the photosensitive circuit comprises:

a photosensitive element for sensing the ambient light to determine a photocurrent flowing through the photosensitive element; and

And a load coupled to the photosensitive element for converting the photocurrent into a photovoltage, wherein a reading circuit reads the photovoltage to obtain the ambient light.

8. The display panel of claim 7, wherein the load comprises:

A transistor having a first end coupled to a power voltage, wherein a second end of the transistor is coupled to the photosensitive element, and a control end of the transistor is coupled to the second end of the transistor.

9. The display panel of claim 7, wherein the load comprises:

a transistor having a first end coupled to a power voltage, wherein a second end of the transistor is coupled to the photosensitive element, and a control end of the transistor is coupled to a bias voltage.

10. The display panel of claim 7, wherein the load comprises:

A resistor having a first end coupled to a power voltage, wherein a second end of the resistor is coupled to the photosensitive element.

11. The display panel of claim 1, wherein the photosensitive circuit comprises:

The photosensitive component is used for sensing the ambient light to determine the photocurrent flowing through the photosensitive component, wherein the photosensitive component is a photosensitive thin film transistor.

12. The display panel of claim 1, wherein the photosensitive circuit comprises:

The light sensing component is used for sensing the ambient light to determine the photocurrent flowing through the light sensing component, wherein the light sensing component is a gap type thin film transistor, and the gate length of the gap type thin film transistor is smaller than the channel length between the source electrode and the drain electrode of the gap type thin film transistor.

13. A display device, characterized in that the display device comprises:

A display panel including an upper substrate, a lower substrate, a thin film transistor layer, and a photosensitive circuit, wherein the thin film transistor layer is disposed between the upper substrate and the lower substrate, a plurality of thin film transistors of a pixel array of the display panel are disposed in the thin film transistor layer, and the photosensitive circuit is disposed in the thin film transistor layer to sense ambient light; and

And the reading circuit is coupled to the photosensitive circuit to read the sensing result.

14. The display device according to claim 13, wherein the upper substrate comprises a cover glass and the lower substrate comprises a polyimide film and a polyester film.

15. The display device according to claim 13, wherein the display panel further comprises:

16. The display device according to claim 15, wherein the display panel further comprises:

17. The display device according to claim 13, wherein the light-sensing circuit is arranged at an edge portion of the display panel.

18. The display device according to claim 13, wherein the light sensing circuit includes:

a photosensitive element for sensing the ambient light to determine a photocurrent flowing through the photosensitive element,

Wherein the reading circuit reads the photocurrent of the photosensitive component to obtain the ambient light.

19. The display device according to claim 18, wherein the reading circuit includes:

An amplifier having a first input coupled to a reference voltage, wherein a second input of the amplifier is coupled to the photosensitive element; and

A resistor having a first end coupled to the second input of the amplifier, wherein the second end of the resistor is coupled to the output of the amplifier.

20. The display device according to claim 18, wherein the reading circuit includes:

A current source;

a resistor having a first end coupled to a power voltage; and

The current mirror has a main current end coupled to the current source and the photosensitive element, wherein a slave current end of the current mirror is coupled to the second end of the resistor.

21. The display device according to claim 18, wherein the reading circuit includes:

a first current source;

A second current source;

A current mirror, wherein a first end of a main current path of the current mirror is coupled to the first current source, a first end of a slave current path of the current mirror is coupled to the second current source, and a second end of the slave current path of the current mirror is coupled to the photosensitive element;

A first transistor having a first end coupled to a second end of the main current path of the current mirror, wherein a second end of the first transistor is coupled to a reference voltage and a control end of the first transistor is coupled to a control voltage;

A second transistor having a first terminal coupled to the second terminal of the slave current path of the current mirror, wherein a second terminal of the second transistor is coupled to the reference voltage, and a control terminal of the second transistor is coupled to the control voltage;

a resistor having a first end coupled to a power voltage; and

A third transistor having a first terminal coupled to the second terminal of the resistor, wherein the second terminal of the third transistor is coupled to the second terminal of the main current path of the current mirror, and a control terminal of the third transistor is coupled to the first terminal of the slave current path of the current mirror.

22. The display device according to claim 13, wherein the light sensing circuit includes:

A load coupled to the photosensitive element for converting the photocurrent into a photovoltage,

Wherein the reading circuit reads the photovoltage to obtain the ambient light.

23. The display device of claim 22, wherein the load comprises:

A transistor having a first terminal coupled to a power voltage, wherein a second terminal of the transistor is coupled to the photosensitive element and the read circuit, and a control terminal of the transistor is coupled to the second terminal of the transistor.

24. The display device of claim 22, wherein the load comprises:

a transistor having a first terminal coupled to a power voltage, wherein a second terminal of the transistor is coupled to the photosensitive element and the read circuit, and a control terminal of the transistor is coupled to a bias voltage.

25. The display device of claim 22, wherein the load comprises:

and a resistor having a first end coupled to a power voltage, wherein a second end of the resistor is coupled to the photosensitive element and the reading circuit.

26. The display device according to claim 22, wherein the reading circuit includes:

An amplifier having a first input coupled to the photosensitive element and the load to receive the photovoltage, wherein a second input of the amplifier is coupled to an output of the amplifier.

27. The display device according to claim 13, wherein the light sensing circuit includes:

28. The display device according to claim 13, wherein the light sensing circuit includes: