CN117995640A - Semiconductor processing equipment - Google Patents

Abstract

The invention discloses semiconductor process equipment, which comprises a process chamber, an inductance device and a shielding device, wherein the inductance device is arranged in the process chamber; wherein: the process chamber is provided with a process inner cavity, the process chamber comprises an insulating cylinder, the inductance device is arranged around the insulating cylinder, and the shielding device is arranged in the process inner cavity and is surrounded by the insulating cylinder; the shielding device comprises a first shielding piece and a second shielding piece, wherein the first shielding piece and the second shielding piece extend along the inner wall of the insulating cylinder in the circumferential direction of the insulating cylinder; the first shield and the second shield are movably engaged such that the shielding device is switchable between a first state and a second state; in the first state, the second shielding piece and the first shielding piece enclose a Faraday cage structure so as to allow a magnetic field generated by the inductance device to enter the process inner cavity and prevent an electric field generated by the inductance device from entering the process inner cavity; in the second state, the second shield forms an electric field passing region with the first shield to allow an electric field generated by the inductive device to enter the process chamber.

Description

Semiconductor processing equipment

Technical Field

The invention relates to the technical field of semiconductor process equipment, in particular to semiconductor process equipment.

Background

Semiconductor processing equipment is widely used in the current manufacturing processes of semiconductor chip manufacture, packaging, LED, flat panel display and the like. Plasma equipment is an important semiconductor processing equipment and is widely used for physical vapor deposition (Physical Vapor Deposition, PVD), plasma etching, plasma chemical vapor deposition (Chemical Vapor Deposition, CVD) and the like according to different types.

When a semiconductor wafer (e.g., a wafer) is processed in a process chamber of a semiconductor processing apparatus, it is necessary to deliver a process gas into the process chamber and energize the process gas into a plasma to process the semiconductor wafer. In the related art, in order to excite a process gas in a process chamber into plasma, an electrode is required to first ignite the process gas in the process chamber to ignite the process gas. Since the ignition of the process gas in the process chamber is mainly accomplished by the lower electrode, however, the lower electrode is in a discharge mode using capacitively coupled plasma (CAPACITIVE COUPLED PLASMA, CCP) and is typically located on a susceptor on which the semiconductor wafer is placed, the lower electrode discharge creates a high negative bias on the semiconductor wafer on the susceptor, which can cause damage to the semiconductor wafer.

Disclosure of Invention

The invention discloses a semiconductor process device, which is used for solving the problem that the semiconductor process device in the related art is easy to cause high negative bias voltage to form on a semiconductor sheet on a base and damage the semiconductor sheet by igniting process gas through a lower electrode.

In order to solve the technical problems, the invention is realized as follows:

The application discloses semiconductor process equipment which is characterized by comprising a process chamber, an inductance device and a shielding device; wherein:

the process chamber is provided with a process inner cavity, the process chamber comprises an insulating cylinder, the inductance device is arranged around the insulating cylinder, and the shielding device is arranged in the process inner cavity and is surrounded by the insulating cylinder;

the shielding device comprises a first shielding piece and a second shielding piece, wherein the first shielding piece and the second shielding piece extend along the inner wall of the insulating cylinder in the circumferential direction of the insulating cylinder;

The first shield and the second shield are movably mated such that the shielding device is switchable between a first state and a second state;

In the first state, the second shielding member and the first shielding member enclose a faraday cage structure to allow a magnetic field generated by the inductance means to enter the process cavity and prevent an electric field generated by the inductance means from entering the process cavity;

In the second state, the second shield forms an electric field passing region with the first shield to allow an electric field generated by the inductive device to enter the process chamber.

The technical scheme adopted by the invention can achieve the following technical effects:

According to the semiconductor process equipment disclosed by the embodiment of the application, the shielding device is arranged to be of a structure comprising the first shielding piece and the second shielding piece, so that the first shielding piece and the second shielding piece can not only protect the insulating cylinder to prevent the insulating cylinder from being polluted by plasma in the process cavity and adsorb most other byproducts in the process cavity, but also allow the electric field generated by the inductance device to enter the process cavity through the electric field passing area when the second shielding piece and the first shielding piece form the electric field passing area, thereby realizing starting of process gas in the process cavity to ignite the process gas in the process cavity, and further the second shielding piece and the first shielding piece can enclose a Faraday cage structure after starting is finished, thereby preventing the electric field generated by the inductance device from entering the process cavity to allow the magnetic field generated by the inductance device to enter the process cavity, so that the plasma in the process cavity can not be extinguished, and the process gas in the process cavity can be excited into plasma for removing impurities on the surface of the semiconductor sheet.

According to the embodiment of the application, the electric field generated by the inductance device can enter the process cavity through the electric field passing region to ignite the process gas in the process cavity, so that the process gas in the process cavity is ignited through the discharge mode of the inductively coupled plasma (Inductive Coupled Plasma, ICP), and the lower electrode of the base is not applied with radio frequency during ignition, so that the semiconductor sheet on the base is not damaged, and the problem that the semiconductor sheet on the base is easily damaged due to high negative bias voltage when the semiconductor process equipment in the related art ignites the process gas through the lower electrode is effectively solved.

Drawings

FIG. 1 is a schematic view of a first semiconductor processing apparatus according to an embodiment of the present invention in a first state;

FIG. 2 is a schematic diagram of a first semiconductor processing apparatus according to an embodiment of the present invention in a second state;

FIG. 3 is a schematic view of a second semiconductor processing apparatus according to an embodiment of the present invention in a first state;

FIG. 4 is a schematic view of a second semiconductor processing apparatus according to an embodiment of the present invention in a second state;

FIG. 5 is a schematic diagram of the shielding device switching between the second state and the first state;

FIG. 6 is a schematic diagram of a drive mechanism according to an embodiment of the present invention;

fig. 7 is a schematic structural view of the first shield member or the second shield member.

Reference numerals illustrate:

100-process chamber, 111-process cavity, 120-insulating cylinder, 130-lower bearing ring, 140-upper bearing ring, 150-cover plate, 160-base body, 170-shielding box,

200-Inductance device,

300-Shielding means, 310-first shielding, 311-first opening area, 320-second shielding, 321-second opening area, 322-external teeth,

400-Driving mechanism, 430-driving motor, 440-worm,

600-Base,

710-A first radio frequency matcher, 720-a second radio frequency matcher, 730-a first radio frequency power supply, 740-a second radio frequency power supply,

800-Bellows.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.

In the physical vapor deposition process, particularly for integrated circuit, through-silicon-via, package manufacturing processes, there is a need for a pre-cleaned semiconductor processing apparatus for removing impurities from the surface of a semiconductor wafer (e.g., wafer) to be processed, so as to facilitate the subsequent physical vapor deposition process effectively to improve the adhesion of the deposited film of the semiconductor wafer, thereby avoiding the reduction of the performance of the semiconductor wafer caused by impurities on the surface of the semiconductor wafer.

When the semiconductor processing equipment is used for pre-cleaning the semiconductor sheet, process gas (such as argon, helium, hydrogen and the like) is generally introduced into a processing chamber of the semiconductor processing equipment, and is excited into plasma to generate a large number of active groups such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active groups react with impurities on the surface of the semiconductor sheet to be processed in a chemical and physical bombardment manner, so that the impurities on the surface of the semiconductor sheet (such as a wafer) and at the bottom of the groove are removed.

Referring to fig. 1 to 7, a semiconductor process apparatus, which may be a semiconductor process apparatus for pre-cleaning, is disclosed in an embodiment of the present invention. The disclosed semiconductor processing apparatus includes a process chamber 100, an inductive device 200, and a shielding device 300.

The process chamber 100 has a process chamber 111, and the process chamber 111 is a place where a process gas, plasma, or the like, processes a semiconductor sheet.

The process chamber 100 includes an insulating cylinder 120. The inductance device 200 is disposed around the insulation cylinder 120. The electric field generated by the inductive device 200 may be used to ignite a process gas in the process chamber 111 to ignite the process gas in the process chamber 111. The magnetic field generated by the inductive device 200 may be used to excite a process gas within the process chamber 111 into a plasma for removing impurities from the semiconductor wafer surface.

The shielding device 300 is disposed in the process chamber 111 and is surrounded by the insulating cylinder 120. The shielding device 300 may be used to protect the insulating cylinder 120 from contamination by plasma in the process chamber 111, where most other byproducts within the process chamber 111 may be adsorbed by the shielding device.

The shielding device 300 includes a first shield 310 and a second shield 320, each of the first shield 310 and the second shield 320 extending along an inner wall of the insulating cylinder 120 in a circumferential direction of the insulating cylinder 120. The first shield 310 and the second shield 320 may be members that shield an electric field and allow a magnetic field to pass through. Specifically, when the first shielding member 310 and the second shielding member 320 are in a completely closed structure, the rf energy on the inductive device 200 cannot be inductively coupled into the plasma in the process cavity 111, so that the first shielding member 310 and the second shielding member 320 are provided with a plurality of vertical slits, so that the first shielding member 310 and the second shielding member 320 can greatly shield an electric field, but allow a magnetic field to pass through, and the rf energy of the inductive device 200 can be fed into the plasma in the process cavity 111 through the manner of inductive coupling.

The first shield 310 and the second shield 320 are in movable engagement, and the first shield 310 and the second shield 320 are movable relative to each other so that the shielding device 300 is switchable between a first state and a second state.

In the first state, the second shielding member 320 encloses a faraday cage structure with the first shielding member 310 to allow the magnetic field generated by the inductive device 200 to enter the process chamber 111 and to prevent the electric field generated by the inductive device 200 from entering the process chamber 111. Specifically, the faraday cage structure enclosed by the first shielding member 310 and the second shielding member 320 may be blocked between the inductance device 200 and the process cavity 111, and the magnetic field generated by the inductance device 200 may pass through the faraday cage structure and enter the process cavity 111, so that the process gas (such as Ar (argon), he (helium), H2 (hydrogen) and the like) in the process cavity 111 is excited into plasma, and a large amount of active groups such as electrons, ions, atoms in an excited state, molecules and free radicals are generated, and these active groups may generate various chemical reactions and physical bombardment with the surface of the semiconductor sheet, so that impurities on the surface of the semiconductor sheet and at the bottom of the trench may be removed.

In the second state, the second shield 320 forms an electric field passing region with the first shield 310 to allow an electric field generated by the inductive device 200 to enter the process chamber 111. Specifically, the electric field passing area may be a notch surrounded by the second shielding member 320 and the first shielding member 310, or may be formed by overlapping a region of the second shielding member 320 and the first shielding member 310, which is not provided with an electric field blocking function, and of course, the electric field passing area may also be a forming manner, which is not described herein.

The semiconductor processing apparatus disclosed in the embodiment of the present application is configured such that the shielding device 300 is configured to include the first shielding member 310 and the second shielding member 320, so that the first shielding member 310 and the second shielding member 320 can not only protect the insulating cylinder 120 from being polluted by plasma in the process cavity 111 and absorb most other byproducts in the process cavity 111, but also allow an electric field generated by the inductance device 200 to enter the process cavity 111 through the electric field passing region when the second shielding member 320 and the first shielding member 310 form the electric field passing region, thereby realizing ignition of process gas in the process cavity 111, so as to ignite the process gas in the process cavity 111, and further after the ignition is completed, the second shielding member 320 and the first shielding member 310 can enclose a faraday cage structure, so as to prevent the electric field generated by the inductance device 200 from entering the process cavity 111, so as to allow a magnetic field generated by the inductance device 200 to enter the process cavity 111, thereby maintaining plasma in the process cavity 111 from being extinguished, so that the process gas in the process cavity 111 can be excited into a conductive plasma for removing impurities on the surface of a semiconductor wafer.

According to the embodiment of the application, the electric field generated by the inductance device 200 can enter the process cavity 111 through the electric field passing region to ignite the process gas in the process cavity 111, so that the process gas in the process cavity 111 is ignited through a discharge mode of the inductively coupled plasma (inductive coupled plasma), and the lower electrode of the base is not applied with radio frequency during the ignition, so that the semiconductor sheet on the base is not damaged, and the problem that the semiconductor sheet on the base is easily damaged due to the fact that the semiconductor sheet on the base forms high negative bias voltage when the semiconductor process equipment in the related art ignites the process gas through the lower electrode can be effectively solved.

In the related art, a capacitive coupling plasma (CAPACITIVE COUPLED PLASMA) discharge mode is adopted by the susceptor to ignite the process gas in the process cavity 111, so that an alternating voltage is generated on the semiconductor sheet by the lower electrode of the susceptor, and under the driving of the alternating voltage, the surface of the semiconductor sheet can form a self-bias voltage, and the self-bias voltage is usually large in magnitude, typically minus hundreds of volts or even minus thousands of volts due to the fact that only the susceptor discharges and the density of the plasma is low, so that the semiconductor sheet is easily damaged during ignition.

Since the application adopts the discharge mode of inductively coupled plasma (inductive coupled plasma) to glow the process gas in the process cavity 111, the semiconductor sheet is equivalent to a standard suspension device in the process cavity 111, and under the condition, the surface of the semiconductor sheet naturally forms a suspension potential, usually only about-10V to-20V, so that the damage to the semiconductor sheet can be reduced by the glow of the process gas in the process cavity 111 by the inductance device 200.

In some embodiments, the semiconductor processing apparatus may further include a susceptor 600, and the susceptor 600 may have a second electrode device. An electric field passing region is formed between the second shield 320 and the first shield 310 to allow an electric field generated by the inductive device 200 to enter the process chamber 111, thereby achieving ignition of the process gas within the process chamber 111 to ignite the process gas. After the ignition is completed, the second shielding member 320 and the first shielding member 310 may enclose a faraday cage structure to allow the magnetic field generated by the inductance device 200 to enter the process chamber 111 and prevent the electric field generated by the inductance device 200 from entering the process chamber 111, so as to maintain the plasma in the process chamber 111 from being extinguished, generate stable plasma in the process chamber 111 by the inductance device 200, and may select whether to load the second electrode device of the susceptor 600 according to the requirement. In the process of etching a semiconductor sheet, the second electrode device of the susceptor 600 may be loaded to form a stable self-biased attractive plasma bombardment on the surface of the semiconductor sheet carried on the susceptor 600 to complete the etching. In other processes, such as those in which the plasma activity within the process chamber 111 is primarily relied upon to chemically react with the surface of the semiconductor wafer, the second electrode assembly on the susceptor 600 need not be loaded.

In some embodiments, the semiconductor processing apparatus may include a first rf matcher 710, a second rf matcher 720, a first rf power supply 730, and a second rf power supply 740, the first rf power supply 730 may be connected with the first rf matcher 710, the first rf matcher 710 being connected with the inductive device 200 for loading rf power to the inductive device 200. The second rf power source 740 may be connected to the second rf matcher 720, and the second rf matcher 720 may be connected to the second electrode device of the susceptor 600 for loading rf power to the second electrode device. The frequencies of the first radio frequency power supply 730 and the second radio frequency power supply 740 are not limited.

Specifically, the edge of the susceptor 600 may be provided with a protrusion extending along the edge for limiting the semiconductor wafer placed on the susceptor 600 to avoid movement.

In an alternative embodiment, the first shielding member 310 may be a first shielding cylinder, and a cylinder wall of the first shielding member 310 may be provided with a first opening area 311. The second shield 320 may be an arc-shaped shield, and an area of the second shield 320 is greater than or equal to an area of the first opening region 311. In the first state, the second shield 320 may cover the first open region 311 such that the first shield 310 and the second shield 320 enclose a faraday cage structure. In the second state, the second shield 320 may clear the first opening region 311 such that a region of the first opening region 311 that is not opposite to the second shield 320 may form an electric field passing region.

According to the embodiment of the application, the first shielding piece 310 is set as the first shielding barrel, the first opening area 311 is formed in the barrel wall of the first shielding piece 310, the second shielding piece 320 is set as the arc-shaped shielding piece, and the area of the second shielding piece 320 is larger than or equal to that of the first opening area 311, so that the structure of the shielding device 300 is relatively smaller under the function of switching the shielding device 300 between the first state and the second state, and the space occupation of the shielding device 300 on semiconductor process equipment can be reduced, and the purpose of weight reduction is realized.

In an alternative embodiment, the first shielding member 310 may be a first shielding cylinder, and a cylinder wall of the first shielding member 310 may be provided with a first opening area 311. The second shielding member 320 may be a second shielding cylinder, and the second shielding member 320 may be provided with a second opening area 321. In the first state, the first opening region 311 and the second opening region 321 are offset from each other, so that the wall of the first shield 310 may cover the second opening region 321, and the wall of the second shield 320 may cover the first opening region 311, so that the first shield 310 and the second shield 320 form a faraday cage structure. In the second state, the first opening region 311 may be opposite to the second opening region 321 such that a region where the first opening region 311 and the second opening region 321 penetrate forms an electric field passing region.

Specifically, when the first opening region 311 and the second opening region 321 are offset from each other, the plurality of vertical slits on the first shielding member 310 are opposite to the plurality of vertical slits on the second shielding member 320, so that the magnetic field generated by the inductance device 200 is facilitated to enter the process chamber 111.

According to the embodiment of the application, the first shielding piece 310 is set as the first shielding barrel, the barrel wall of the first shielding piece 310 is provided with the first opening area 311, the second shielding piece 320 is set as the second shielding barrel, and the second shielding piece 320 is provided with the second opening area 321, so that when the electric field generated by the inductance device 200 needs to be prevented from entering the process inner cavity 111, the first shielding piece 310 and the second shielding piece 320 can be prevented in a double way, and the capability of preventing the electric field generated by the inductance device 200 from entering the process inner cavity 111 can be improved.

In an alternative embodiment, where the second shielding member 320 is a second shielding cylinder, the second shielding cylinder may be sleeved outside the first shielding cylinder, so that the first shielding member 310 and the second shielding member 320 may perform dual blocking of the electric field, so as to improve the capability of blocking the electric field generated by the inductance device 200 from entering the process cavity 111.

When the second shield 320 is an arc-shaped shield, the arc-shaped shield may be provided at an inner side of the first shield cylinder, and the second shield 320 extends along an outer wall of the first shield 310 in a circumferential direction of the first shield 310. Preferably, when the second shielding member 320 is an arc shielding member, the arc shielding member may be disposed outside the first shielding cylinder, and the arc shielding member extends along an outer wall of the first shielding cylinder in a circumferential direction of the first shielding cylinder, so as to ensure the integrity of the process chamber 111 as much as possible.

In order to facilitate control of the relative movement of the first shield 310 and the second shield 320, the first shield 310 may optionally be fixed to the process chamber 100 and the second shield 320 may be movably coupled to the process chamber 100. Since the second shield 320 is positioned outside the first shield 310, the internal space structure of the process chamber 111 is minimally changed when the second shield 320 is moved, thereby facilitating the stability of the distribution of the process gas, plasma, etc. within the process chamber 111.

In some embodiments, the movement of the second shield 320 may be manually implemented, and in order to implement the intelligent design of the semiconductor processing apparatus, optionally, the semiconductor processing apparatus may further include a driving mechanism 400, the driving mechanism 400 may be connected to the process chamber 100, the driving mechanism 400 may be connected to the second shield 320, and the driving mechanism 400 may drive the second shield 320 to move so that the second shield 320 is switched between a position covering the first opening region 311 and a position avoiding the first opening region 311.

The embodiment of the application drives the second shielding piece 320 to move by arranging the driving mechanism 400, so that the second shielding piece 320 is more intelligent when switching between the position covering the first opening area 311 and the position avoiding the first opening area 311.

In particular, the driving mechanism 400 may be a hydraulic driving mechanism, an air driving mechanism, or the like, and the specific form of the driving mechanism 400 is not limited herein.

Alternatively, the second shield 320 may be provided with external teeth 322 along the circumference of the first shield 310, the driving mechanism 400 may include a driving motor 430 and a worm 440, the driving motor 430 may be provided to the process chamber 100, and the external teeth 322 may be engaged with the worm 440. The driving motor 430 may be coupled to the worm 440, and the driving motor 430 may drive the second shield 320 to rotate in the circumferential direction of the first shield 310 through engagement of the worm 440 with the external teeth 322.

The present application makes full use of the structure of the second shield 320 by providing the external teeth 322 on the second shield 320, so that it is possible to avoid providing other transmission members between the second shield 320 and the driving mechanism 400, and thus it is possible to realize driving of the second shield 320 by the driving mechanism 400 by fewer members. By providing the driving mechanism 400 to include the driving motor 430 and the worm 440, the transmission direction of the driving motor 430 can be changed, and thus the layout of the driving mechanism 400 can be facilitated.

In some embodiments, the drive mechanism 400 may drive the second shield 320 to rotate about the axis of the first shield 310 to effect a switch of the second shield 320 between a position covering the first open region 311 and a position clear of the first open region 311.

To make the movement form of the second shielding member 320 simpler, alternatively, the driving mechanism 400 may drive the second shielding member 320 to move in the axial direction of the first shielding member 310 so that the second shielding member 320 moves between a position covering the first opening region 311 and a position avoiding the first opening region 311. The second shield 320 is driven to move in the axial direction of the first shield 310 by the driving mechanism 400, so that the movement of the second shield 320 is made simpler, thereby facilitating the control of the second shield 320.

In an alternative embodiment, the semiconductor processing apparatus may include a bellows 800, the process chamber 100 may be provided with perforations, the drive mechanism 400 may include a drive motor 430, the drive motor 430 may be a linear motor, and the linear motor may be disposed outside the process chamber 100. The motor output shaft of the linear motor may pass through the perforation and be connected to the second shield 320, and the linear motor drives the second shield 320 to move. Of course, in case that the output shaft of the linear motor is short, the linear motor may be connected to the second shielding member 320 through a connection member passing through the penetration hole, and the linear motor may drive the second shielding member 320 to move.

The bellows 800 may be disposed in the process chamber 111, and a first port of the bellows 800 may be sealingly engaged with an inner wall of the process chamber 111, and an edge of the bellows 800 surrounding the first port may be disposed around the perforation, and a second port of the bellows 800 may be sealingly engaged with the second shield 320, the bellows 800 being retractable as the second shield 320 moves.

According to the embodiment of the application, the driving mechanism 400 is arranged to comprise the linear motor, so that the mode of driving the second shielding piece 320 to move through the linear motor is simpler, the corrugated pipe 800 is further arranged, the first port of the corrugated pipe 800 is in sealing butt joint with the inner wall of the process inner cavity 111, the edge of the corrugated pipe 800 surrounding the first port can be arranged around the perforation, and the second port of the corrugated pipe 800 is in sealing butt joint with the second shielding piece 320, so that the corrugated pipe 800 can protect the motor output shaft or the connecting piece of the linear motor. The linear motor is located outside the process chamber 100 such that the linear motor is not located within the high temperature, high pressure process chamber 100. This connection of the bellows 800 enables the linear motor located outside the process chamber 100 to drive the second shield 320 located within the process chamber 100 while ensuring a hermetic isolation of the process chamber 100 from the external environment.

In a normal situation, the electrical output of the inductive device 200 is in a grounded state, and the voltage at the electrical input of the inductive device 200 is highest when the inductive device 200 is energized, and optionally, in order to improve the ignition capability of the inductive device 200 to the process gas in the process chamber 111, in the second state, the electric field passing area may be opposite to the electrical input of the inductive device 200, so that the discharge of the inductive device 200 to the process gas in the process chamber 111 is easier, and thus the ignition capability of the inductive device 200 to the process gas in the process chamber 111 may be improved.

Alternatively, the insulating cylinder 120 may be a ceramic cylinder, and the process chamber 100 may further include a lower receiving ring 130 and an upper receiving ring 140, and the ceramic cylinder may be supported between the upper receiving ring 140 and the lower receiving ring 130. Because the ceramic cylinder belongs to the fragile component, through setting up and accepting ring 140 and lower accepting ring 130, can be convenient for the installation of ceramic cylinder simultaneously, can protect ceramic cylinder.

The process chamber 100 may further comprise a cover plate 150 and a base 160, the upper receiving ring 140 may be sealingly coupled to the cover plate 150, the lower receiving ring 130 may be sealingly coupled to the base 160, and the cover plate 150, the upper receiving ring 140, the insulating cylinder 120, the lower receiving ring 130, and the base 160 together define a process chamber 111.

The process chamber 100 may further include a shielding box 170, and the shielding box 170 may be disposed at a side of the inductive device 200 facing away from the process chamber 111 to shield an electric field and a magnetic field generated by the inductive device 200, thereby preventing interference with other components.

The first opening area 311 and the second opening area 321 in the embodiment of the present application may occupy 5% to 15% of the entire circumferential area of the first shielding member 310 and the second shielding member 320, respectively, where the lengths of the first shielding member 310 and the second shielding member 320 in the direction in which the electrical input end of the inductance device 200 points to the electrical output end are identical to the lengths of the inductance device 200 in the direction in which the electrical input end points to the electrical output end, or are greater than the lengths of the inductance device 200 in the direction in which the electrical input end points to the electrical output end.

The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.

The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.

Claims (12)

1. A semiconductor processing apparatus comprising a process chamber (100), an inductive device (200) and a shielding device (300); wherein:

The process chamber (100) is provided with a process inner cavity (111), the process chamber (100) comprises an insulating cylinder (120), the inductance device (200) is arranged around the insulating cylinder (120), and the shielding device (300) is arranged in the process inner cavity (111) and is surrounded by the insulating cylinder (120);

The shielding device (300) comprises a first shielding member (310) and a second shielding member (320), wherein the first shielding member (310) and the second shielding member (320) extend along the inner wall of the insulating cylinder (120) in the circumferential direction of the insulating cylinder (120);

-the first shield (310) and the second shield (320) are actively engaged such that the shielding device (300) is switchable between a first state and a second state;

In the first state, the second shielding member (320) and the first shielding member (310) enclose a faraday cage structure to allow a magnetic field generated by the inductance device (200) to enter the process cavity (111) and prevent an electric field generated by the inductance device (200) from entering the process cavity (111);

in the second state, the second shield (320) forms an electric field passing region with the first shield (310) to allow an electric field generated by the inductive device (200) to enter the process chamber (111).

2. The semiconductor processing apparatus of claim 1, wherein the first shield (310) is a first shield cylinder, and a cylinder wall of the first shield (310) is provided with a first opening region (311); the second shielding piece (320) is an arc shielding piece, and the area of the second shielding piece (320) is larger than or equal to that of the first opening area (311);

In the first state, the second shield (320) covers the first opening area (311);

In the second state, the second shield (320) is retracted from the first opening region (311) such that a region of the first opening region (311) that is not opposite to the second shield (320) forms the electric field passing region.

3. The semiconductor processing apparatus of claim 1, wherein the first shield (310) is a first shield cylinder, and a cylinder wall of the first shield (310) is provided with a first opening region (311); the second shielding piece (320) is a second shielding cylinder, and a second opening area (321) is formed in the second shielding piece (320);

In the first state, the first opening region (311) and the second opening region (321) are offset from each other;

In the second state, the first opening region (311) and the second opening region (321) are opposed to each other such that a region where the first opening region (311) and the second opening region (321) penetrate forms the electric field passing region.

4. The semiconductor processing apparatus of claim 2, wherein,

The arc-shaped shielding piece is arranged outside the first shielding cylinder, and extends along the outer wall of the first shielding cylinder in the circumferential direction of the first shielding cylinder.

5. The semiconductor processing apparatus of claim 3 wherein said second shield canister is disposed outside of said first shield canister.

6. The semiconductor processing apparatus of claim 4 or 5, wherein the first shield (310) is fixed with the process chamber (100) and the second shield (320) is movably connected with the process chamber (100).

7. The semiconductor processing apparatus of claim 6, further comprising a drive mechanism (400), the drive mechanism (400) being coupled to the process chamber (100), the drive mechanism (400) being coupled to the second shield (320), the drive mechanism (400) driving the second shield (320) to move to switch the second shield (320) between a position covering the first open region (311) and a position clear of the first open region (311).

8. The semiconductor processing apparatus of claim 7, wherein the second shield (320) is provided with external teeth (322) along a circumferential direction of the first shield (310), the driving mechanism (400) includes a driving motor (430) and a worm (440), the driving motor (430) is disposed in the process chamber (100), the external teeth (322) are engaged with the worm (440), the driving motor (430) is connected with the worm (440), and the driving motor (430) drives the second shield (320) to rotate along the circumferential direction of the first shield (310) through the engagement of the worm (440) with the external teeth (322).

9. The semiconductor processing apparatus of claim 7, wherein the drive mechanism (400) drives the second shield (320) to move in an axial direction along the first shield (310) to move the second shield (320) between a position covering the first open area (311) and a position avoiding the first open area (311).

10. The semiconductor process apparatus of claim 9, comprising a bellows (800), wherein the process chamber (100) is provided with perforations, wherein the drive mechanism (400) comprises a drive motor (430), wherein the drive motor (430) is a linear motor, and wherein the linear motor is disposed outside the process chamber (100);

a motor output shaft of the linear motor passes through the through hole and is connected with the second shielding piece (320), or the linear motor is connected with the second shielding piece (320) through a connecting piece passing through the through hole, and the linear motor drives the second shielding piece (320) to move;

The corrugated pipe (800) is arranged in the process inner cavity (111), a first port of the corrugated pipe (800) is in sealing butt joint with the inner wall of the process inner cavity (111), the edge of the corrugated pipe (800) surrounding the first port is arranged around the perforation, a second port of the corrugated pipe (800) is in sealing butt joint with the second shielding piece (320), and the corrugated pipe (800) can stretch and retract along with the movement of the second shielding piece (320).

11. The semiconductor processing apparatus of claim 1, wherein in the second state the electric field passing region is opposite to an electrical input of the inductive device (200).

12. The semiconductor processing apparatus of claim 1, wherein the insulating cylinder (120) is a ceramic cylinder, the process chamber (100) further comprising a lower receiving ring (130) and an upper receiving ring (140), the ceramic cylinder being supported between the upper receiving ring (140) and the lower receiving ring (130).