CN117995630A - High-resolution electromagnet analyzer, ion implantation system and ion beam generation method - Google Patents

High-resolution electromagnet analyzer, ion implantation system and ion beam generation method Download PDF

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CN117995630A
CN117995630A CN202410147120.8A CN202410147120A CN117995630A CN 117995630 A CN117995630 A CN 117995630A CN 202410147120 A CN202410147120 A CN 202410147120A CN 117995630 A CN117995630 A CN 117995630A
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ion beam
ribbon
electromagnet
analyzer
ribbon ion
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陈炯
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Xinyu Semiconductor Shanghai Co ltd
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Xinyu Semiconductor Shanghai Co ltd
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Abstract

The invention discloses a high-resolution electromagnet analyzer, an ion implantation system and an ion beam generation method, which belong to the technical field of semiconductor ion implantation processes, wherein the high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of a ribbon ion beam, and a resolution slot with a slit is arranged outside one end of an outlet of the high-resolution electromagnet analyzer and is used for enabling the ribbon ion beam to pass through the slit of the resolution slot so as to separate required ions from contaminant ions with different momentums. The ion implantation system based on the electromagnetic analyzer as the core module comprises a small ion source and an extraction electrode, wherein the ion beam continuously expands on the electromagnet, so that the long axis of the ion beam reaches the target length, the ion beam is collimated on the quadrupole magnetic lens magnet, and continuously moves to the target through the resolution groove. The invention can better meet the requirements of the current high-quality advanced semiconductor technology through optimizing and improving the structure and the method in multiple aspects.

Description

High-resolution electromagnet analyzer, ion implantation system and ion beam generation method
Technical Field
The invention belongs to the technical field of semiconductor ion implantation processes, and particularly relates to a high-resolution electromagnet analyzer, an ion implantation system and an ion beam generation method.
Background
With the development of the semiconductor industry, the requirements for ion implantation process also tend to be more accurate. The prior ion implantation system structure, such as that shown in U.S. patent application publication No. US5350926a (fig. 2 of the present specification), is complex and costly and is capable of producing only ribbon-shaped ion beams having a size of 300 mm. In a system for generating an ion beam, an electromagnet analyzer is one of key components, and is required to provide good field uniformity, high resolution, light weight and the like; the prior art solutions do not better meet the current requirements of high quality advanced semiconductor processes.
Disclosure of Invention
Based on the technical problems existing in the prior art, the invention provides a high-resolution electromagnet analyzer, an ion implantation system and an ion beam generation method, and by optimizing and improving the system structure and the method in multiple aspects, the invention provides compact control of a fringe field to provide good field uniformity, and achieves the effects of more compact electromagnet structure, light weight and the like.
According to an aspect of the present invention, there is provided a high resolution electromagnet analyzer for separating unwanted ion species during the passage of a ribbon ion beam through the high resolution electromagnet analyzer;
The high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched magnetic yoke structure comprises an arched wall structure, two ends of the arched magnetic yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched magnetic yoke structure encloses an inner space region used as a space channel of the ribbon ion beam;
The travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees;
The high-resolution electromagnet analyzer also comprises two annular coils which are approximately mirror symmetry, wherein the two annular coils are arranged in parallel to form an aligned array, each annular coil comprises a plurality of discrete coils, two ends of each annular coil are end bending sections, and the bending directions of the two end bending sections of the same annular coil are the same; a group of a plurality of conductive sections which are serially connected in sequence are formed in the annular coil; the bending direction of the two end bending sections of one annular coil in the aligned array is opposite to the bending direction of the two end bending sections of the other annular coil; the two toroidal coils are positioned within the interior space region along the interior surface of the arcuate yoke structure such that end bend sections at both ends of the toroidal coils extend from and are adjacent to the two open ends of the arcuate yoke structure, respectively, and a gap space between the two toroidal coils serves as a limiting boundary for the path of travel of the ribbon ion beam.
Further, each annular coil comprises eight conductive segments connected in series in sequence, namely:
a first conductive segment: a curved section substantially parallel to the circular arc section of the travel path of the ribbon ion beam;
a second conductive segment: a curved section curved by 90 ° with respect to the first conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
third conductive segment: a curved segment that arches across the path of travel of the ion beam;
Fourth conductive segment: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam is located;
Fifth conductive segment: a curved section substantially parallel to the circular arc section of the travel path of the ribbon ion beam and opposite to the first conductive section, the curved section having an opposite orientation to the first conductive section;
sixth conductive segment: a curved section curved by 90 ° with respect to the fifth conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
Seventh conductive segment: a curved segment that arches across the path of travel of the ion beam;
Eighth conductive segment: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam is located, and is connected to the first conductive section to form a ring shape.
Further, a resolving slot having a slit is provided outside an outlet end of the high resolution electromagnet analyzer for transmitting a ribbon ion beam through the slit of the resolving slot to separate desired ions from contaminant ions having different momentums.
Further, the average spacing of the poles of the high resolution electromagnet analyzer increases along the direction of travel of the ribbon ion beam, thereby increasing the radius of the ion beam trajectory along the path of the ion beam.
Further, the arcuate yoke structure is generally rectangular in cross-section and the cross-sectional shape can be used to define a change in magnetic field to change the focusing characteristics, thereby increasing the aspect ratio of the line focus of the ribbon ion beam and/or increasing the beam flux of the ribbon ion beam through the slit of the resolving slot.
Further, the currents of the two toroidal coils can be adjusted to different values, thereby changing the parallelism of the ribbon ion beam with the slit of the resolving slot.
Further, the difference value of the currents of the two loop coils is not more than 20%.
According to an aspect of the present invention, there is provided an ion implantation system for implanting a workpiece with a ribbon ion beam, the ion implantation system comprising:
an ion source having a slot-like opening for generating a ribbon-shaped ion beam divergent in both horizontal and vertical directions;
A high resolution electromagnet analyzer for separating unwanted ion species from a traveling ribbon ion beam that focuses the ribbon ion beam at its narrow dimension into a line focus;
a resolving slot having a slit through which the focused ribbon ion beam is transmitted, the slit blocking unwanted contaminants;
a quadrupole linear lens capable of generating a quadrupole field of a desired intensity that focuses the ribbon ion beam over its longer dimension such that the ion beam trajectories are approximately parallel; and
An implantation mechanism for causing the workpiece to pass through the ribbon ion beam along the narrow dimension direction of the ribbon ion beam at a set speed, thereby effectively implanting ions of a desired dose into the workpiece;
The travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer comprises an arched yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched yoke structure comprises an arched wall structure, two ends of the arched yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched yoke structure encloses an inner space region used as a space channel of the ribbon ion beam.
Further, a multipole lens with adjustable magnetic field gradients to control ribbon beam uniformity, and/or an ion beam density diagnostic for determining beam density, angle, and beam position of the ribbon ion beam implanted into the workpiece are included.
According to an aspect of the present invention, there is provided an ion beam generating method for generating a continuous parallel ribbon-shaped ion beam subjected to mass analysis, comprising the steps of:
Generating a ribbon ion beam diverged in two dimensions from a slot in the ion source that is substantially smaller in size than the desired parallel ribbon ion beam;
Deflecting the ion beam by a high resolution electromagnet analyzer by an angle between 50 degrees and 100 degrees; the high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched magnetic yoke structure comprises an arched wall structure, two ends of the arched magnetic yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched magnetic yoke structure encloses an inner space region used as a space channel of the ribbon ion beam; the travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer also comprises two annular coils which are approximately mirror symmetry, wherein the two annular coils are arranged in parallel to form an aligned array, each annular coil comprises a plurality of discrete coils, two ends of each annular coil are end bending sections, and the bending directions of the two end bending sections of the same annular coil are the same; a group of a plurality of conductive sections which are serially connected in sequence are formed in the annular coil; the bending direction of the two end bending sections of one annular coil in the aligned array is opposite to the bending direction of the two end bending sections of the other annular coil; the two annular coils are positioned within the interior space region along the interior surface of the arcuate yoke structure such that end curved sections of both ends of the annular coils extend from and are adjacent to the two open ends of the arcuate yoke structure, respectively, a gap space between the two annular coils serving as a limiting boundary for a path of travel of the ribbon ion beam; providing an adjustable current to each toroidal coil of the high resolution electromagnet analyzer to generate a magnetic field, the current circulating in the same direction for each toroidal coil; allowing a magnetic field generated by the high resolution electromagnet analyzer to focus and converge the ribbon ion beam in a direction orthogonal to the magnetic field while causing minimal focusing on the ribbon ion beam long dimension, thereby allowing the ribbon ion beam to continue to diverge on its long dimension while refocusing to a line focus at a distance downstream of the magnetic field; passing the ribbon beam through a slit effective to reject unwanted beam components; and passing the ribbon ion beam through a magnetic lens effective to have a divergence in the length direction within 1 degree.
Further, the magnetic field generated by the high resolution electromagnet analyzer is effectively confined within the spatial channel through which the ribbon ion beam passes and rapidly decays outside of the spatial channel.
Further, a large ion beam having a rectangular cross section and a high aspect ratio, the high aspect ratio being greater than 10, is generated, the large ion beam being a ribbon-shaped ion beam of at least 800mm in a longer dimension.
Compared with the prior art, the invention has the following beneficial technical effects:
The high resolution electromagnet analyzer, ion implantation system and ion beam generation method aspects of the present invention provide a frame electromagnet having an aligned array of mirror-symmetrical paired coils that is capable of bending a high aspect ratio ribbon ion beam through an angle of no less than about 50 degrees and no more than about 100 degrees and is capable of mass analysis through a resolving slot slit at (near) focus of the ribbon ion beam; the long transverse axis of the ion beam may be more than 50% of the bend radius, aligned with the generated magnetic field; the array of paired coils and their corresponding magnetic materials provide close control of fringing fields to provide good field uniformity and enable the fabrication of more compact and lightweight structures than other electromagnet types conventionally used in the ion implantation industry; in the system of the present invention, refocusing the ribbon beam with low aberrations to achieve high resolution is of great value in ion implanters; after expansion and analysis, the system size is further reduced by collimating the ion beam using a small ion source and quadrupole magnetic lenses; there is no fundamental limit on the aspect ratio of the ion beam that can be analyzed; the ion implantation system based on the electromagnet as a core module comprises a small ion source, wherein an ion beam extraction electrode is gradually expanded almost parallel to the direction of the magnetic field of the electromagnet, and the ion beam is continuously expanded in the magnetic field, so that the long axis of the ion beam reaches the target length; wherein the expansion angle of the ion beam can be controlled to be smaller than 10 degrees; the expanded ion beam is collimated by the quadrupole magnetic lens magnet, and the collimated ion beam passes through the resolution slot slit at a nearly focusing position and continuously goes forward to the target.
Drawings
FIG. 1 is a schematic diagram of a high resolution electromagnet analyzer according to one embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a conventional ion implantation system.
FIG. 3 is a schematic cross-sectional view of a high resolution electromagnet analyzer according to one embodiment of the present invention.
Fig. 4 is a schematic diagram of the configuration of a toroidal coil of a high resolution electromagnet analyzer according to one embodiment of the present invention.
Fig. 5 is a schematic diagram of the magnetic field of a prior art electromagnet analyzer.
FIG. 6 is a schematic diagram of the magnetic field of a high resolution electromagnet analyzer according to one embodiment of the present invention.
Fig. 7-9 are schematic diagrams of three sections of a high resolution electromagnet analyzer along the direction of travel of an ion beam, according to one embodiment of the present invention.
Fig. 10 is a schematic perspective view of a portion of an ion implantation system according to an embodiment of the present invention.
Fig. 11 is a schematic top view of the structure shown in fig. 10.
Reference numerals in the drawings illustrate:
1. A high resolution electromagnet analyzer; 101. an arcuate yoke structure; 102. an ion beam path; 103. a toroidal coil; 104. an end bending section; 105. a partition wall; 106a, a first conductive segment; 106b, a second conductive segment; 106c, a third conductive segment; 106d, a fourth conductive segment; 106e, a fifth conductive segment; 106f, a sixth conductive segment; 106g, a seventh conductive segment; 106h, an eighth conductive segment; 107. a resolution cell; 2. an ion source; 3. a quadrupole linear lens; 4. a multipole lens; 501. an ion beam current density diagnostic device; 502. an injection mechanism; 503. a Faraday cup; 504. a controller; B. a ribbon ion beam; w, a workpiece.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention provides a high-resolution electromagnet analyzer, an ion implantation system and an ion beam generation method, which belong to the technical field of semiconductor ion implantation processes, wherein the high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of a ribbon ion beam, the travelling path of the ribbon ion beam has a preset curve shape, and the preset curve shape comprises an arc section with the radius ranging from 0.25 meters to 4 meters and a fixed curvature angle ranging from 50 degrees to 100 degrees; also included are two toroidal coils that are approximately mirror-symmetrical (i.e., mirror-symmetrical or nearly mirror-symmetrical) and are disposed in parallel in an aligned array, the two toroidal coils being positioned within the interior space region along the interior surface of the arcuate yoke structure such that end bend sections at both ends of the toroidal coils extend from and are adjacent to the two open ends of the arcuate yoke structure, respectively. The invention can better meet the requirements of the current high-quality advanced semiconductor technology by optimizing and improving the system structure and the method in multiple aspects.
Referring first to fig. 2, the prior art ion implanter uses two different magnets to generate the desired ribbon ion beam, a first magnet to mass analyze the ion beam and a second magnet to make the ions in the beam more parallel, typically with a resolving power in excess of 80M/a MFWHM, a configuration that is conventional in conventional ribbon beam implantation systems. But has disadvantages in that it is complicated and expensive in structure and can produce only a ribbon-shaped ion beam having a size of 300 mm. In addition, the existing magnets for mass analysis have defects and deficiencies such as resolution deviation, systematic deviation, limited ability to prevent beam spread and the like. On the other hand, one of the main difficulties in bending a ribbon-shaped ion beam with a single magnet is that it is highly likely to produce severe second order aberrations, which in turn result in distortion of the beam shape, which can reduce the mass resolution available from an electromagnet analyzer, and which is detrimental to the effective aspect ratio of the ion beam, which in turn is detrimental to the efficiency and effectiveness of the scanning implant.
Referring to fig. 1,3 and 4, a high resolution electromagnet analyzer according to one embodiment of the present invention is configured to separate unwanted ion species during the travel of a ribbon ion beam through the high resolution electromagnet analyzer. The travel path of the ribbon ion beam B has a predetermined curved shape including a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees. More specifically, the two ends of the arc section are straight line sections, and the angle between the two straight line sections is the curvature angle. The cross section of the ribbon ion beam B is in a symmetrical shape such as a rectangle or an ellipse, and for convenience of description, the path of the center point of the cross section is called as a central axis; the central axis has the predetermined curved shape described above. The shape of the ribbon beam B in the whole space covered by the ribbon beam B during traveling is called the traveling path of the ribbon beam B, which changes in divergence or convergence on both sides of the central axis in addition to bending by the magnetic field.
The high resolution electromagnet analyzer 1 includes an arcuate yoke structure 101 surrounding a path of travel of a ribbon ion beam B, the arcuate yoke structure 101 being at least partially constructed of ferromagnetic material, the arcuate yoke structure 101 including an arcuate wall structure of fixed size having a generally rectangular frame-like cross section, the arcuate wall structure of the arcuate yoke structure 101 defining open ends for entrance and exit of the ribbon ion beam, respectively, the arcuate wall structure of the arcuate yoke structure 101 enclosing a volumetric interior space region for a spatial passage of the ribbon ion beam.
Also included are two (a pair of) toroidal coils 103 that are approximately mirror-symmetrical, the two toroidal coils 103 being arranged in parallel in an aligned array; more specifically, the loop coils 103 are symmetrically disposed on both sides of a plane in which a central axis of a traveling path of the ribbon ion beam lies (i.e., are disposed symmetrically up and down as shown in fig. 1,3, and 4). The two ends of the annular coil 103 are end bending sections 104, the bending directions of the two end bending sections 104 of the same annular coil 103 are the same, and a group of a plurality of conductive sections which are serially connected in sequence are formed in the annular coil 103; the ribbon ion beam B travels within the interior space region of the arcuate yoke structure 101 with each conductive segment having a fixed, preselected, sequential position and a corresponding angular orientation relative to the path of travel of the ribbon ion beam B. Each annular coil 103 in the aligned array comprises a number of discrete coils, which are elongated complete rings composed at least in part of an electrically conductive material; in other words, each toroidal coil 103 is composed of a plurality of discrete coils having a structure such as end bent sections, respectively, so that the toroidal coils 103 are multi-layered, multi-turn coils, satisfying the required ampere-turns. The bending direction of the two end bending sections 104 of one of the loop coils 103 in the aligned array is opposite to the bending direction of the two end bending sections 104 of the other loop coil 103. The closed loop cavity volume in each toroidal coil 103 provides a central open space channel that extends from one end bend segment 104 to the other end bend segment 104 over the linear dimension distance of the aligned arrays. The two toroidal coils 103 are positioned within the interior space region along the inner surfaces of the two opposing arcuate wall structures of the arcuate yoke structure 101 such that end bent sections 104 of both ends of a pair of aligned toroidal coils 103 extend from and are adjacent to the two open ends of the arcuate yoke structure 101, respectively. When the continuous ribbon ion beam B travels in the gap space existing between the two annular coils 103 located in the inner space region of the arcuate yoke structure 101, the gap space between the two annular coils 103 serves as a limiting boundary of the travel path of the continuous ribbon ion beam B. Further, the inner space region of the arcuate yoke structure 101 is defined by the annular coil 103 at both ends in the longer dimension direction thereof and by the wall surfaces of the two arcuate wall structures of the arcuate yoke structure 101 in the shorter dimension direction thereof.
In a preferred embodiment, two partition walls 105 are further disposed inside the arcuate yoke structure 101, and the two partition walls 105 and two opposite non-arcuate wall surfaces (upper and lower wall surfaces in fig. 1 and 3) of the arcuate yoke structure 101 are hermetically separated to define an ion beam channel 102, where the ion beam channel 102 is adapted to the travelling path of the ribbon ion beam B. The partition 105 is made of a non-magnetic material such as aluminum or a non-metal. The toroidal coil 103 is located between two opposing arc-like wall surfaces (side surfaces in fig. 1, 3) of the arcuate yoke structure 101 and the partition wall 105. Thereby ensuring that the ribbon beam B travels in a high vacuum environment, while the toroidal coil 103 and its associated circuitry, etc., may be isolated from the high vacuum environment.
More specifically, power supply means for providing an adjustable current to each toroidal coil 103 in an aligned array, the current being circulated in the same direction for each toroidal coil 103, thereby producing the required magnetic field with good field uniformity and well contained fringing fields, enabling bending of the high aspect ratio ribbon ion beam B through an angle of at least 50 degrees, and focusing of the ribbon ion beam B such that desired ion components pass through the resolving slot 107 without undesired ion components being transmitted, thereby enabling mass analysis, and such an aligned array may enable lighter device structures than existing magnets.
Further, as shown in fig. 4, each loop coil 103 includes eight conductive segments sequentially connected in series, respectively:
First conductive segment 106a: a curved section substantially parallel to the circular arc section of the travel path of the ribbon ion beam;
Second conductive segment 106b: a curved section curved by 90 ° with respect to the first conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
third conductive segment 106c: a curved segment that arches across the path of travel of the ion beam, the central portion of which is preferably flat;
fourth conductive segment 106d: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam lies, which is substantially parallel to the second conductive section;
fifth conductive segment 106e: a curved segment generally parallel to the circular arc segment of the travel path of the ribbon ion beam and opposite (substantially parallel equidistant) the first conductive segment, the curved segment running opposite the first conductive segment;
sixth conductive segment 106f: a curved section curved by 90 ° with respect to the fifth conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
seventh conductive segment 106g: a curved segment that arches across the path of travel of the ion beam, the central portion of which is preferably flat;
Eighth conductive segment 106h: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam lies, which is substantially parallel to the sixth conductive section, and whose end is connected to a start point of the first conductive section so as to form a loop shape.
The direction of the current in each toroidal coil 103 is in this order circulating through the eight conductive segments to form the desired magnetic field. The current flowing in the two end bend sections 104 of each coil configuration extends out of the mid-plane of the arcuate yoke structure 101, controlling the magnetic potential distribution so that a smooth and rapid drop in fringe field occurs, confining the magnetic field to the region occupied by the ion beam. The total number of ampere-turns required for the toroidal coil 103 (all of its discrete coils) is determined by the magnetic gap, the radius of the ion deflection path, and the mass and energy of the ions. The magnetic field generated inside the closed space region (rectangular cross section) may be highly uniform up to the confinement boundary imposed by the arcuate yoke structure 101 and the two toroidal coils 103. Furthermore, the boundary provided by the pair of toroidal coils allows for a uniform field tangential to the boundary to exist in the desired direction, thereby utilizing the entire bounded area inside the arcuate yoke structure 101 for the magnetic field. The arcuate yoke structure 101 and the toroidal coil 103 together substantially prevent the generation of an external fringe field, and a limited fringe field coming out of the open end of the arcuate yoke structure 101 is attenuated and confined. At the boundary of the arcuate yoke structure 101, the magnetic field is perpendicular to the surface, so that in the case of a steel structure of the arcuate yoke structure 101 defining rectangular gap spaces and channels at the top and bottom ends, the direction of the magnetic field is determined. For the boundary conditions of the coil conductor edges, the max Wei Xuandu equation can be partially reduced toThe equation, and the effective solution, is a constant field B y in the boundary region of the conductor, and B y decreases linearly to zero within the conductor as a function of x (here defined as the ion beam traveling in the z direction, the magnetic field direction being in the y direction, the x direction being orthogonal to both the y and z directions). The present invention is a dipole field within the arcuate yoke structure 101, while the extended external magnetic field does not appear as a dipole with respect to the attendant fringing field. In addition, the structure of the invention can greatly reduce the amount of steel required for the side surface of the magnetic yoke structure, which is realized based on the elimination of fringe fields in the areas outside the ion beam entering and exiting paths, so that the structure can be lighter in weight and less in material consumption. As shown in fig. 5 and 6, compared with the prior art, the present invention has the advantages that the magnetic field outside the arched yoke structure 101 is basically negligible, and the effective elimination of fringe fields is realized.
The power supply device is capable of generating a substantially uniform magnetic field in an interior space region (ion beam channel 102) of the arcuate yoke structure 101, effectively bending the ribbon ion beam B as it passes through the interior space region. More specifically, the high resolution electromagnet analyzer is capable of efficiently deflecting desired ions in a ribbon ion beam through a preselected angle of curvature, the preselected angle of curvature ranging between 50 degrees and 100 degrees, and focusing the deflected ribbon ion beam to form a line focus having an aspect ratio of at least 10.
Referring to fig. 10 and 11, a resolving slot 107 having a slit is provided outside the outlet end of the high resolution electromagnet analyzer 1, and a ribbon ion beam B is transmitted through the slit of the resolving slot 107, thereby separating desired ions from contaminant ions having different momentums. More specifically, the high resolution electromagnet analyzer 1 separates unwanted ion species from a divergent ribbon ion beam by bending the ribbon ion beam through an angle greater than 50 degrees. More specifically, at the line focus, the ion beam may pass through a slit, which may block unwanted beamlets in the normal manner of the mass analysis system; if the width of the beam focus is smaller than the width of the slit, the resolution is the ratio of mass dispersion to slit width; the achievable resolution is determined by the quality of the focus.
Referring to fig. 7 to 9, in the preferred embodiment, the average spacing of the magnetic poles of the high resolution electromagnet analyzer 1 (i.e., the spacing between the two opposing non-arcuate wall surfaces of the arcuate yoke structure 101, i.e., the dimension of the beam path 102 in the length direction) increases along the travel direction of the ribbon beam B, thereby increasing the radius of the beam trajectory along the path of the beam. Further, the shape of the magnetic poles (in other words, the shape of the ion beam channel 102) is similar to the shape of the ribbon ion beam B, the cross-section of which varies along its intended path of travel.
In some embodiments, the arcuate yoke structure 101 has a generally rectangular frame-like cross-section, and the cross-sectional shape can be used to define a change in magnetic field, in other words, by shaping the cross-section, an adjustment of the magnetic field can be achieved to change the focusing characteristics, thereby increasing the aspect ratio of the line focus of the ribbon ion beam B. In yet other embodiments, the arcuate yoke structure 101 is generally rectangular in cross-section and the cross-sectional shape can be used to define a change in magnetic field, thereby changing the spot properties, thereby increasing the beam flux of the ribbon ion beam B through the slit of the resolving slot 107. Specifically, for example, in order to maintain good focusing quality, it is necessary to control the aberration, and thus it may be necessary to slightly shape the field distribution, and it is possible to make the magnetic field nonuniform by deviating the cross-sectional shape of the arcuate yoke structure 101 from a simple rectangular shape (e.g., adjusting the pole pieces or open ends at the top and bottom of the arcuate yoke structure 101), and to modify the placement of the coil to adjust the current distribution, so that more desirable control of the aberration can be achieved.
In a preferred embodiment, the currents of the two toroidal coils 103 can be adjusted to different values, thereby changing the parallelism of the ribbon beam B with the slit of the resolving slot. More specifically, the current difference value of the two loop coils 103 is not more than 20%, the current difference value being a ratio of the current difference of the two loop coils 103 to the smaller value of the currents of the two loop coils 103.
Referring to fig. 10 and 11, in accordance with the present invention, a high resolution electromagnet analyzer 1 provides an ion implantation system for implanting a workpiece with a ribbon ion beam, comprising, in accordance with some embodiments:
An ion source 2 having a slot-like opening (or slot) for generating a ribbon-shaped ion beam that diverges in both the horizontal and vertical directions; an extraction electrode is arranged at the output end of the groove-shaped opening (slot); preferably, for example, the ion beam height required at the implantation plane is 800mm, the ion beam being generated by a relatively small ion source, approximately 100mm high, in order to reduce the height required for the high resolution electromagnet analyser 1, the ion beam diverging and expanding horizontally and vertically in the path through the magnets;
a high resolution electromagnet analyzer 1 for separating unwanted ion species from a traveling ribbon ion beam, which focuses the ribbon ion beam B on its narrow dimension, forming a line focus;
a resolving slot 107 having a slit through which the focused ribbon ion beam B is transmitted, the slit blocking unwanted contaminants;
A quadrupole linear lens 3 (or multipole lens) capable of generating a quadrupole field of a desired intensity that focuses the ribbon ion beam B a small amount over its longer dimension so that the ion beam trajectories are approximately parallel (i.e., so that the travel path shape of the ribbon ion beam B is approximately parallel ribbon along its travel direction, all ion motion directions are approximately parallel); and
The implantation mechanism 502, for example, a scanning robot, causes the workpiece W to pass through the ribbon ion beam B in a direction of a narrow dimension of the ribbon ion beam B at a set speed, thereby efficiently implanting ions of a desired dose into the workpiece W.
Further, the traveling path of the ribbon ion beam B has a predetermined curved shape including a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed curvature angle ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer includes an arcuate yoke structure 101 surrounding a travel path of a ribbon ion beam, the arcuate yoke structure 101 including an arcuate wall structure, both ends of the arcuate yoke structure 101 being open ends serving as an entrance and an exit of the ribbon ion beam, respectively, the arcuate wall structure of the arcuate yoke structure 101 enclosing an interior space region serving as a space passage of the ribbon ion beam.
Preferably, a multipole lens 4 (optionally, for example, a quadrupole lens) with adjustable magnetic field gradients to control ribbon beam uniformity is also included, the multipole lens 4 being located between the quadrupole linear lens 3 and the resolving aperture 107. Preferably, the ion beam density diagnostic apparatus 501 is further included, and is used for determining the beam density, angle and beam position of the band-shaped ion beam B injected into the workpiece, the ion beam density diagnostic apparatus 501 is optionally arranged at the same position as the workpiece W when the implantation is performed, and the ion beam density diagnostic apparatus 501 is connected with a driving structure, and cooperates with the implantation mechanism 502, so that the part receiving the band-shaped ion beam B can be switched into the workpiece W or the ion beam density diagnostic apparatus 501.
Further, the ion implantation apparatus is provided with a faraday cup 503 on a side of the implantation mechanism 502 opposite to the resolution cell 107. The ion beam density diagnostic apparatus 501, the quadrupole linear lens 3, the multipole lens 4, and the like are connected to a controller 504, and adjustment, control, and the like of a magnetic field and a working process are realized. In fig. 10 and 11, a part of the vacuum chamber structure is omitted, and the ion beam transport and implantation processes and the like are performed in a vacuum environment. The injection mechanism 502 is located in a vacuum process chamber, which is also connected with a vacuum transfer chamber in which a transfer robot or the like is located, and with two load lock modules.
In one mode of operation, the ion beam is a ribbon beam having a major (length) dimension that exceeds the dimension of the workpiece W (e.g., wafer). Thus, the quadrupole linear lens 3, multipole lens 4 causes the ion beam to be expanded until it reaches a size larger than the workpiece W. The current in the coils of the multipole lens 4 is controlled based on the diagnosis result of the ion beam current density diagnostor 501 to control the current density in the ion beam profile. In particular, the current is used to collimate the ion beam such that the ions in the ion beam are substantially parallel when the ion beam is directed onto the workpiece W. The workpiece W is translated through the ion beam one or more times along a single path to achieve implantation of a desired uniform dose of ions into the surface of the workpiece W.
The magnets in the system of the present invention focus the ion beam to the middle waist in the direction of dispersion, so that very high aspect ratios, which may be in excess of 40, can be obtained at the plane downstream of the ion beam magnets, and high resolution of 60 or higher can be achieved.
The present invention also provides an ion beam generating method of generating a mass analyzed continuous parallel ribbon ion beam, comprising, according to some embodiments, the steps of:
generating a ribbon ion beam diverged in two dimensions from a slot of the ion source 2 that is substantially smaller in size than the desired parallel ribbon ion beam;
Deflecting the ion beam by the high resolution electromagnet analyzer 1 by an angle between 50 degrees and 100 degrees; the high-resolution electromagnet analyzer 1 comprises an arc-shaped magnetic yoke structure 101 surrounding a traveling path of a ribbon ion beam, wherein the arc-shaped magnetic yoke structure 101 comprises an arc-shaped wall structure, two ends of the arc-shaped magnetic yoke structure 101 are respectively used as an opening end of an inlet and an opening end of an outlet of the ribbon ion beam, and the arc-shaped wall structure of the arc-shaped magnetic yoke structure 101 encloses an inner space region used as a space channel of the ribbon ion beam; the travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer further comprises two annular coils 103 which are approximately mirror symmetry, wherein the two annular coils 103 are arranged in parallel to form an aligned array, each annular coil 103 comprises a plurality of discrete coils, two ends of each annular coil 103 are provided with end bending sections 104, and the bending directions of the two end bending sections 104 of the same annular coil 103 are the same; the toroidal coil 103 has a set of a plurality of conductive segments formed therein in series in sequence; the bending direction of the two end bending sections 104 of one of the loop coils 103 in the aligned array is opposite to the bending direction of the two end bending sections 104 of the other loop coil 103; the two annular coils 103 are positioned within the interior space region along the inner surface of the arcuate yoke structure 101 such that end bent sections 104 at both ends of the annular coils 103 extend from and are adjacent to the two open ends of the arcuate yoke structure 101, respectively, the gap space between the two annular coils 103 serving as a limiting boundary for the travel path of the ribbon ion beam; providing an adjustable current to each toroidal coil 103 of the high resolution electromagnet analyzer to generate a magnetic field, the current circulating in the same direction for each toroidal coil 103; allowing a magnetic field generated by the high resolution electromagnet analyzer to focus and converge the ribbon ion beam in a direction orthogonal to the magnetic field while causing minimal focusing on the ribbon ion beam long dimension, thereby allowing the ribbon ion beam to continue to diverge on its long dimension while refocusing to a line focus at a distance downstream of the magnetic field; passing the ribbon beam through a slit effective to reject unwanted beam components; and passing the ribbon ion beam through a magnetic lens effective to cause its divergence in the length direction to be within 1 degree, forming a substantially parallel ribbon ion beam, causing ions to be implanted into the workpiece W at substantially the same angle.
Further, the ribbon ion beam B is deflected at an angle of curvature of about 90 degrees.
Further, the magnetic field generated by the high-resolution electromagnet analyzer 1 is effectively confined within a prescribed spatial channel (i.e., within the arcuate yoke structure) through which the ribbon ion beam B passes, and rapidly decays outside the prescribed spatial channel.
Further, a large ion beam having a rectangular cross section is generated therein. High aspect ratios, such as aspect ratios (ratio of longer dimension to shorter dimension) greater than 10, large ion beams, such as ribbon ion beams of at least 800mm in longer dimension.
In a specific embodiment, the high resolution electromagnet analyzer 1 generates a magnetic field of 0.25T sufficient to analyze a 100keV p+ ion beam using a design bend radius of 1.0 m. The curved plane is horizontal and the long axis of the ribbon beam is vertical, implantation being accomplished by passing the workpiece W horizontally through the beam at the target plane.
In summary, the present invention provides a frame electromagnet having an aligned array of mirror-symmetrical paired coils that is capable of bending a high aspect ratio ribbon ion beam through an angle of no less than about 50 degrees and no more than about 100 degrees and is capable of mass analysis through a resolving slot at (near) focus of the ribbon ion beam. The long transverse axis of the ion beam may be in excess of 50% of the bend radius, aligned with the generated magnetic field. The array of paired coils and their corresponding magnetic materials provide close control of fringing fields to provide good field uniformity and enable the fabrication of compact and lightweight structures than other electromagnet types conventionally used in the ion implantation industry. In the system of the present invention, the ribbon beam is refocused with low aberrations to achieve high resolution, which is of great value in ion implanters. After expansion and analysis, the system size is further reduced by collimating the ion beam using a small ion source and quadrupole magnetic lenses. There is no fundamental limit to the aspect ratio of the ion beam that can be analyzed. The ion implantation system based on the electromagnet as a core module comprises a small ion source, wherein an ion beam extraction electrode is gradually expanded in a direction almost parallel to the magnetic field direction of the electromagnet, and the ion beam continues to be expanded at the magnet, so that the long axis of the ion beam reaches the target length. Wherein the ion beam spread angle is less than 10 degrees. The expanded ion beam is collimated by the quadrupole magnetic lens magnet, and the collimated ion beam passes through the resolution slot at a nearly focusing position and continues to the target. The invention can better meet the requirements of the current high-quality advanced semiconductor technology by optimizing and improving the system structure and the method in multiple aspects. Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (12)

1. A high resolution electromagnet analyzer for separating unwanted ion species during the passage of a ribbon ion beam through the high resolution electromagnet analyzer;
The high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched magnetic yoke structure comprises an arched wall structure, two ends of the arched magnetic yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched magnetic yoke structure encloses an inner space region used as a space channel of the ribbon ion beam;
The travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees;
The high-resolution electromagnet analyzer also comprises two annular coils which are approximately mirror symmetry, wherein the two annular coils are arranged in parallel to form an aligned array, each annular coil comprises a plurality of discrete coils, two ends of each annular coil are end bending sections, and the bending directions of the two end bending sections of the same annular coil are the same; a group of a plurality of conductive sections which are serially connected in sequence are formed in the annular coil; the bending direction of the two end bending sections of one annular coil in the aligned array is opposite to the bending direction of the two end bending sections of the other annular coil; the two toroidal coils are positioned within the interior space region along the interior surface of the arcuate yoke structure such that end bend sections at both ends of the toroidal coils extend from and are adjacent to the two open ends of the arcuate yoke structure, respectively, and a gap space between the two toroidal coils serves as a limiting boundary for the path of travel of the ribbon ion beam.
2. The high resolution electromagnet analyzer of claim 1, wherein each annular coil comprises eight conductive segments serially connected in series, respectively:
a first conductive segment: a curved section substantially parallel to the circular arc section of the travel path of the ribbon ion beam;
a second conductive segment: a curved section curved by 90 ° with respect to the first conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
third conductive segment: a curved segment that arches across the path of travel of the ion beam;
Fourth conductive segment: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam is located;
Fifth conductive segment: a curved section substantially parallel to the circular arc section of the travel path of the ribbon ion beam and opposite to the first conductive section, the curved section having an opposite orientation to the first conductive section;
sixth conductive segment: a curved section curved by 90 ° with respect to the fifth conductive section in a direction away from a plane in which a central axis of a traveling path of the ribbon ion beam is located;
Seventh conductive segment: a curved segment that arches across the path of travel of the ion beam;
Eighth conductive segment: a curved section curved by 90 ° with respect to the third conductive section in a direction approaching a plane in which a central axis of a traveling path of the ribbon-shaped ion beam is located, and is connected to the first conductive section to form a ring shape.
3. The high resolution electromagnet analyzer of claim 1, wherein a resolving slot having a slit is provided outside an outlet end of the high resolution electromagnet analyzer for transporting a ribbon ion beam through the slit of the resolving slot and separating desired ions from contaminant ions of different magnitudes.
4. The high resolution electromagnet analyzer of claim 1 wherein the average spacing of the poles of the high resolution electromagnet analyzer increases in the direction of travel of the ribbon ion beam such that the radius of the ion beam trajectory increases along the path of the ion beam.
5. A high resolution electromagnet analyzer according to claim 3 wherein the arcuate yoke structure is generally rectangular in cross-section and the cross-sectional shape is operable to define a change in magnetic field to change the focusing characteristics, thereby increasing the aspect ratio of the line focus of the ribbon ion beam and/or increasing the beam flux of the ribbon ion beam through the slit of the resolving slot.
6. The high resolution electromagnet analyzer of claim 3 wherein the currents of the two toroidal coils can be adjusted to different values, thereby changing the parallelism of the ribbon beam with the slit of the resolving slot.
7. The high resolution electromagnet analyzer of claim 6, wherein the difference in current between the two toroidal coils is no greater than 20%.
8. An ion implantation system for implanting a workpiece with a ribbon ion beam, the ion implantation system comprising:
an ion source having a slot-like opening for generating a ribbon-shaped ion beam divergent in both horizontal and vertical directions;
A high resolution electromagnet analyzer for separating unwanted ion species from a traveling ribbon ion beam that focuses the ribbon ion beam at its narrow dimension into a line focus;
a resolving slot having a slit through which the focused ribbon ion beam is transmitted, the slit blocking unwanted contaminants;
a quadrupole linear lens capable of generating a quadrupole field of a desired intensity that focuses the ribbon ion beam over its longer dimension such that the ion beam trajectories are approximately parallel; and
An implantation mechanism for causing the workpiece to pass through the ribbon ion beam along the narrow dimension direction of the ribbon ion beam at a set speed, thereby effectively implanting ions of a desired dose into the workpiece;
The travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer comprises an arched yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched yoke structure comprises an arched wall structure, two ends of the arched yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched yoke structure encloses an inner space region used as a space channel of the ribbon ion beam.
9. The ion implantation system of claim 8, further comprising a multipole lens with adjustable magnetic field gradients to control ribbon beam uniformity, and/or an ion beam density diagnostic for determining beam density, angle, and beam position of the ribbon ion beam implanted into the workpiece.
10. A method of generating an ion beam, characterized in that it generates a continuous parallel ribbon-shaped ion beam that is mass analyzed, comprising the steps of:
Generating a ribbon ion beam diverged in two dimensions from a slot in the ion source that is substantially smaller in size than the desired parallel ribbon ion beam;
Deflecting the ion beam by a high resolution electromagnet analyzer by an angle between 50 degrees and 100 degrees; the high-resolution electromagnet analyzer comprises an arched magnetic yoke structure surrounding the travelling path of the ribbon ion beam, wherein the arched magnetic yoke structure comprises an arched wall structure, two ends of the arched magnetic yoke structure are respectively used as the opening ends of the inlet and the outlet of the ribbon ion beam, and the arched wall structure of the arched magnetic yoke structure encloses an inner space region used as a space channel of the ribbon ion beam; the travel path of the ribbon ion beam has a predetermined curvilinear shape comprising a circular arc segment having a radius ranging from 0.25 meters to 4 meters and a fixed angle of curvature ranging from 50 degrees to 100 degrees; the high-resolution electromagnet analyzer also comprises two annular coils which are approximately mirror symmetry, wherein the two annular coils are arranged in parallel to form an aligned array, each annular coil comprises a plurality of discrete coils, two ends of each annular coil are end bending sections, and the bending directions of the two end bending sections of the same annular coil are the same; a group of a plurality of conductive sections which are serially connected in sequence are formed in the annular coil; the bending direction of the two end bending sections of one annular coil in the aligned array is opposite to the bending direction of the two end bending sections of the other annular coil; the two annular coils are positioned within the interior space region along the interior surface of the arcuate yoke structure such that end curved sections of both ends of the annular coils extend from and are adjacent to the two open ends of the arcuate yoke structure, respectively, a gap space between the two annular coils serving as a limiting boundary for a path of travel of the ribbon ion beam; providing an adjustable current to each toroidal coil of the high resolution electromagnet analyzer to generate a magnetic field, the current circulating in the same direction for each toroidal coil; allowing a magnetic field generated by the high resolution electromagnet analyzer to focus and converge the ribbon ion beam in a direction orthogonal to the magnetic field while causing minimal focusing on the ribbon ion beam long dimension, thereby allowing the ribbon ion beam to continue to diverge on its long dimension while refocusing to a line focus at a distance downstream of the magnetic field; passing the ribbon beam through a slit effective to reject unwanted beam components; and passing the ribbon ion beam through a magnetic lens effective to have a divergence in the length direction within 1 degree.
11. The ion beam generating method of claim 10, wherein the magnetic field generated by the high resolution electromagnet analyzer is effectively confined within a spatial channel through which the ribbon ion beam passes and rapidly decays outside the spatial channel.
12. The method of claim 10, wherein a high aspect ratio, i.e., an aspect ratio greater than 10, and a large ion beam having a rectangular cross-section, i.e., a ribbon-shaped ion beam of at least 800mm in a longer dimension, is generated.
CN202410147120.8A 2024-02-02 2024-02-02 High-resolution electromagnet analyzer, ion implantation system and ion beam generation method Pending CN117995630A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258380A1 (en) * 2004-05-18 2005-11-24 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
US20080029716A1 (en) * 2006-06-12 2008-02-07 Advanced Ion Beam Technology, Inc. Apparatus and method for ion beam implantation using ribbon and spot beams

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258380A1 (en) * 2004-05-18 2005-11-24 White Nicholas R High aspect ratio, high mass resolution analyzer magnet and system for ribbon ion beams
US20080029716A1 (en) * 2006-06-12 2008-02-07 Advanced Ion Beam Technology, Inc. Apparatus and method for ion beam implantation using ribbon and spot beams

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