CN117991426A - Laser reflector and preparation method and application thereof - Google Patents
Laser reflector and preparation method and application thereof Download PDFInfo
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- CN117991426A CN117991426A CN202410015041.1A CN202410015041A CN117991426A CN 117991426 A CN117991426 A CN 117991426A CN 202410015041 A CN202410015041 A CN 202410015041A CN 117991426 A CN117991426 A CN 117991426A
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- laser
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- laser mirror
- film
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 10
- 238000002310 reflectometry Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000012528 membrane Substances 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 34
- 239000012788 optical film Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- Optical Elements Other Than Lenses (AREA)
Abstract
The invention discloses a laser reflector, a preparation method and application thereof, and relates to the technical field of optical films. The laser mirror includes: a substrate and a reflective film provided on a surface of the substrate; the structure of the reflecting film is as follows: sub/(HL)/(m H/Air); wherein Air represents Air; sub represents a substrate; h represents a high refractive index film layer with an optical thickness of 1/4 of the design wavelength thickness; l represents a SiO 2 film layer with optical thickness of 1/4 designed wavelength thickness; m represents the number of repetitions of the membrane layer structure in brackets. The laser reflector is not easy to generate heat, and the temperature is kept within 15 ℃ in the using process; the laser damage resistance is strong, and the service life is long; the reflectivity in the wavelength range is up to 99.8%.
Description
Technical Field
The invention relates to the technical field of optical films, in particular to a laser reflector, a preparation method and application thereof.
Background
The laser mirror is an optical element for reflecting the laser beam to redirect the laser light. It is an important component in laser system, and is commonly used in applications such as beam control in laser beam path, beam path refraction, beam alignment, and interference experiment. However, the existing laser reflector is very easy to generate heat, and the temperature in the use process is often more than 25 ℃, so that the stability and the precision of a laser system are affected; the laser damage resistance is low, the film layer of the laser reflector is easy to burn after being irradiated by about 3J/cm 2 of laser energy, and the service life of the laser reflector is shortened; and the reflectivity is lower than 99.5%.
Therefore, it is desirable to provide a laser mirror that is less prone to heat generation, has high resistance to laser damage, and has high reflectivity.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides the laser reflector which is not easy to generate heat; the laser damage resistance is strong; the reflectivity in the wavelength range is up to 99.9%.
The invention also provides a preparation method of the laser reflector.
The invention also provides application of the laser reflector.
According to an embodiment of the first aspect of the present invention, a laser mirror includes: a substrate and a reflective film provided on a surface of the substrate;
The structure of the reflecting film is as follows: sub/(HL)/(m H/Air);
Wherein Air represents Air; sub represents a substrate; h represents a high refractive index film layer with an optical thickness of 1/4 of the design wavelength thickness; l represents a SiO 2 film layer with optical thickness of 1/4 designed wavelength thickness; m represents the number of repetitions of the membrane layer structure in brackets.
The laser reflector provided by the embodiment of the invention has at least the following beneficial effects:
The use temperature of the existing commercial laser reflector is maintained at about 60 ℃ and the heating is serious; the laser reflector of the embodiment is not easy to generate heat, the temperature in the using process is kept within 15 ℃, and the laser device runs stably. In addition, the laser reflector of the embodiment has strong laser damage resistance, the laser damage threshold reaches 34.42J/cm 2, and the service life reaches more than 5 years; the reflectivity is more than 99.9 percent, and the light-emitting efficiency and the laser conversion efficiency are ultrahigh; has good application prospect in the aspects of semiconductor lasers, laser reflectors and the like.
Compared with other low-refractive-index film layers such as aluminum fluoride, magnesium difluoride and aluminum oxide, the SiO 2 is plated with a plurality of film layers, the stress is small, the film layer performance is stable, and the surface smoothness is better.
According to some embodiments of the invention, the high refractive index film layer comprises at least one of a metallic zirconium film layer and a metallic hafnium film layer. Compared with other high-refractive-index film layers such as a zirconium dioxide film layer, a silicon nitride film layer, a niobium oxide film layer and the like, the film layer is more compact and has stronger laser damage resistance through atomic deposition.
According to some embodiments of the invention, m is 20 to 26. For example: may be 20, 21, 22, 23, 24, 25 or 26. If m is too small, the reflectivity is insufficient, m is too large, accumulated weak absorption is more, the threshold value of laser damage resistance is reduced, and the capability of laser damage resistance is deteriorated.
According to some embodiments of the invention, the substrate comprises optical grade quartz glass.
According to some embodiments of the invention, the thickness of the substrate is 1mm to 5mm. For example: may be 1mm, 2mm, 3mm, 4mm or 5mm.
According to some embodiments of the invention, the reflective film has a thickness of 6 μm to 6.6 μm. For example: may be 6.1 μm, 6.2 μm, 6.3 μm, 6.4 μm, 6.5 μm or 6.6 μm.
According to some embodiments of the invention, the design wavelength of the laser mirror is 1000nm to 1060nm. For example: may be 1000nm, 1010nm, 1020nm, 1030nm, 1040nm, 1050nm or 1060nm.
According to some embodiments of the invention, the laser mirror is used at a wavelength of 899nm to 980nm.
According to some embodiments of the invention, the laser mirror has a reflectivity of greater than 99.9% over the wavelength range of use.
According to a second aspect of the present invention, a method for manufacturing the laser mirror includes the following steps:
and alternately plating a high refractive index film layer and a SiO 2 film layer on one side surface of the substrate by using an electron beam evaporation and ion source auxiliary deposition method or an ion beam sputtering method so as to form the reflecting film.
According to some embodiments of the invention, when electron beam evaporation and ion source assisted deposition are used, the vacuum condition is 6.0X10 -4Pa～6.5×10-4 Pa; the temperature is 280-300 ℃; the oxygen flow is 90 sccm-100 sccm. The preparation is carried out under high vacuum condition, and the impurities and residual gas are less.
According to some embodiments of the invention, when electron beam evaporation and ion source assisted deposition are used, the vacuum condition is 6.5X10 -4 Pa; the temperature is 280 ℃; the oxygen flow rate was 90sccm. The high-energy RF ion source is adopted for assistance, so that the filling density of the film layer is high, the film layer is firm, and the temperature drift effect is small.
According to some embodiments of the invention, when the high refractive index film target material is prepared by adopting an electron beam evaporation and ion source assisted deposition method, the evaporation rate of the high refractive index film target material is 0.1 nm/second to 0.15 nm/second; and/or
The evaporation rate of SiO 2 is 0.5 nm/sec to 0.6 nm/sec.
According to some embodiments of the invention, when electron beam evaporation and ion source assisted deposition are used for preparation, the evaporation rate of the high refractive index film target is 0.15 nm/s; and/or
The evaporation rate of SiO 2 was 0.6 nm/sec.
The use of a laser mirror according to an embodiment of the third aspect of the invention in a semiconductor laser or laser reflector. The laser reflector of the above embodiment has all the advantages of the above embodiment.
A semiconductor laser or laser reflector according to an embodiment of the fourth aspect of the present invention comprises the laser mirror described above. The laser reflector of the above embodiment has all the advantages of the above embodiment.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a spectrum of a laser mirror of example 1 of the present invention.
Detailed Description
The conception and the technical effects produced by the present invention will be clearly and completely described in conjunction with the embodiments below to fully understand the objects, features and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention.
The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The word "preferably" or the like in the present invention refers to embodiments of the invention that may provide certain benefits in certain circumstances. However, other embodiments may be preferred under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, nor is it intended to exclude other embodiments from the scope of the invention.
When a range of values is disclosed herein, the range is considered to be continuous and includes both the minimum and maximum values for the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range description features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to include any and all subranges subsumed therein.
In the description of the present invention, it should be understood that the direction or positional relationship indicated with respect to the description of the orientation, such as up, down, etc., is based on the direction or positional relationship shown in the drawings, is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Example 1
The embodiment provides a laser reflector, which consists of a substrate and a reflecting film arranged on the surface of the substrate;
the substrate is optical quartz glass JGS1, and the thickness is 1.0mm;
the structure of the reflecting film is as follows: sub/(HL)/(20H/Air), 41 layers in total, the thickness is 6.2 μm;
Wherein Air represents Air; sub represents a substrate; h represents a 1/4 design wavelength thick zirconium metal (zr) film; l represents a 1/4 design wavelength thick silicon dioxide (SiO 2) film; 20 indicates the number of repetitions of the membrane layer structure in brackets.
The design wavelength of the laser reflector is 1030nm, and the incident angle of light is 45 degrees.
The specific thickness designs are shown in table 1.
TABLE 1 reflective film structure
Note that: lambda refers to the design wavelength. The error of the optical thickness is + -0.02λ, and the error of the physical thickness is + -3 nm.
The preparation method of the laser reflector comprises the following steps:
Placing a substrate on a stage of a vacuum cavity of optical coating equipment, adopting a high-energy RF ion source for assistance, charging working gas oxygen for 90sccm under the conditions of 6.5 multiplied by 10 -4 Pa and 280 ℃, melting metal zirconium and silicon dioxide materials by using the heat energy of an electron beam, alternately evaporating the two materials, and plating the materials on the surface of the substrate; metal zirconium evaporation rate: 0.15 nm/sec, silica evaporation rate: 0.6 nm/s.
Test case
1. Spectral diagram of laser mirror of example 1, AOI:45 deg.. As shown in fig. 1. The reflectance data using wavelengths from 899nm to 980nm are shown in Table 2.
TABLE 2 reflectivity of the laser mirrors of example 1 in the range of 899nm to 980nm
The laser reflector of the embodiment 1 has the reflectivity more than or equal to 99.9% in the wavelength range of 899nm to 980nm, and achieves the ultrahigh light-emitting efficiency and the ultrahigh laser conversion efficiency.
2. The laser damage threshold of the laser mirror of example 1 was measured by the institute of precision optical engineering technology at the university of homography. Test instrument: and a damage threshold testing platform. According to the requirements of ISO 21254, corresponding detection standards and flows are established.
The laser wavelength is 1064nm, the pulse width is 10ns, and the repetition frequency is 10Hz; the measured temperature was 22℃and the measured relative humidity was 45%. The spot diameter D (1/e 2) was 163 μm and the maximum output energy was 2J@1064nm.
In the S-ON-1 test mode (test angle of 0 ℃), the laser damage threshold of the laser mirror of example 1 was 34.42J/cm 2.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention.
Claims (10)
1. A laser mirror, comprising: a substrate and a reflective film provided on a surface of the substrate;
The structure of the reflecting film is as follows: sub/(HL)/(m H/Air);
Wherein Air represents Air; sub represents a substrate; h represents a high refractive index film layer with an optical thickness of 1/4 of the design wavelength thickness; l represents a SiO 2 film layer with optical thickness of 1/4 designed wavelength thickness; m represents the number of repetitions of the membrane layer structure in brackets.
2. The laser mirror according to claim 1, wherein m is 20 to 26.
3. The laser mirror of claim 1, wherein the high refractive index film comprises at least one of a metallic zirconium film, a metallic hafnium film.
4. The laser mirror of claim 1, wherein the substrate has a thickness of 1mm to 5mm.
5. The laser mirror according to claim 1, wherein the thickness of the reflective film is 6 μm to 6.6 μm.
6. The laser mirror of claim 1, wherein the laser mirror has a wavelength of 899nm to 980nm; preferably, the reflectivity of the laser mirror is greater than 99.9% over the wavelength range of use.
7. A method of producing a laser mirror as claimed in any one of claims 1 to 6, comprising the steps of:
and alternately plating a high refractive index film layer and a SiO 2 film layer on one side surface of the substrate by using an electron beam evaporation and ion source auxiliary deposition method or an ion beam sputtering method so as to form the reflecting film.
8. The method of claim 7, wherein the high refractive index film target has an evaporation rate of 0.1 nm/sec to 0.15 nm/sec when prepared by electron beam evaporation and ion source assisted deposition; and/or
The evaporation rate of SiO 2 is 0.5 nm/sec to 0.6 nm/sec.
9. Use of a laser mirror according to any of claims 1 to 6 in a semiconductor laser or laser reflector.
10. A semiconductor laser or laser reflector comprising a laser mirror as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410015041.1A CN117991426A (en) | 2024-01-03 | 2024-01-03 | Laser reflector and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410015041.1A CN117991426A (en) | 2024-01-03 | 2024-01-03 | Laser reflector and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117991426A true CN117991426A (en) | 2024-05-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410015041.1A Pending CN117991426A (en) | 2024-01-03 | 2024-01-03 | Laser reflector and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117991426A (en) |
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- 2024-01-03 CN CN202410015041.1A patent/CN117991426A/en active Pending
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