CN117990019A - Scanning method of scanning electron microscope and scanning electron microscope - Google Patents

Scanning method of scanning electron microscope and scanning electron microscope Download PDF

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Publication number
CN117990019A
CN117990019A CN202211339117.3A CN202211339117A CN117990019A CN 117990019 A CN117990019 A CN 117990019A CN 202211339117 A CN202211339117 A CN 202211339117A CN 117990019 A CN117990019 A CN 117990019A
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China
Prior art keywords
scanning
interlacing
detection image
target sample
lines
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CN202211339117.3A
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Chinese (zh)
Inventor
陈航卫
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Application filed by Changxin Memory Technologies Inc filed Critical Changxin Memory Technologies Inc
Priority to CN202211339117.3A priority Critical patent/CN117990019A/en
Priority to PCT/CN2023/070548 priority patent/WO2024087395A1/en
Publication of CN117990019A publication Critical patent/CN117990019A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

The present disclosure provides a scanning method of a scanning electron microscope and a scanning electron microscope, the scanning electron microscope including a first detector and a second detector disposed opposite to each other, the scanning method including: performing interlaced scanning on a target sample for multiple times in a first direction and a second direction to form a detection image of the target sample according to electron beams received by the first detector and the second detector; the adjacent two lines corresponding to the interlacing are different, the multiple interlacing corresponds to all lines of the target sample, each line of the target sample corresponds to at least two interlacing, and the at least two interlacing at least comprises the scanning of the line in the first direction and the scanning of the line in the second direction, and the second direction is the opposite direction of the first direction. Embodiments of the present disclosure may provide more accurate sample detection images.

Description

Scanning method of scanning electron microscope and scanning electron microscope
Technical Field
The present disclosure relates to the field of integrated circuit inspection technology, and in particular, to a scanning method of a scanning electron microscope and a scanning electron microscope for performing the scanning method.
Background
A scanning electron microscope (Critical Dimension Scanning Electron Microscope, CDSEM) for feature size measurement is a scanning electron microscope that calculates the line width of a pattern in an integrated circuit by determining the boundary of the pattern according to the gray scale (grey-scale) of the image. In the detection process, a high-energy electron beam is emitted to a detected sample (integrated circuit) in a scanning mode, the electron beam reflected by the surface of the detected sample is received, a scanning image of the detected sample is formed according to the density of the reflected electron beam, so that the microscopic morphology of the detected sample is obtained, and further measurement of a target area in the detected sample, such as measurement of pattern line width, is realized.
In the related art, the CDSEM divides a scanning area into a plurality of scanning lines according to a set step length, scans a sample to be measured, and then fits according to the number of electrons in an electron beam reflected by each line of the sample to be measured received by a detector to form a detection image of the sample to be measured. In the practical application process, the detection image formed by the CDSEM generally has the problems of uneven imaging brightness, uneven imaging definition and the like caused by non-sample reasons, and when detecting the microscopic region, the uneven detection result can cause errors.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The disclosure aims to provide a scanning method of a scanning electron microscope and the scanning electron microscope, which are used for overcoming the problem of uneven imaging definition caused by non-sample reasons of a detection image formed by CDSEM at least to a certain extent.
According to a first aspect of the present disclosure, there is provided a scanning method of a scanning electron microscope, performed by a scanning electron microscope including a first detector and a second detector disposed opposite to each other, the scanning method comprising: performing interlaced scanning on a target sample for multiple times in a first direction and a second direction to form a detection image of the target sample according to electron beams received by the first detector and the second detector; the adjacent two lines corresponding to the interlacing are different, the multiple interlacing corresponds to all lines of the target sample, each line of the target sample corresponds to at least two interlacing, and the at least two interlacing at least comprises the scanning of the line in the first direction and the scanning of the line in the second direction, and the second direction is the opposite direction of the first direction.
In one exemplary embodiment of the present disclosure, interlacing a target sample multiple times in a first direction and a second direction to form a detection image of the target sample from electron beams received by the first detector and the second detector includes: performing a first group of multiple interlacing on a target sample along the first direction to form a first detection image according to the electron beam received by the first detector, wherein lines corresponding to each interlacing in the first group of multiple interlacing are different, and the first group of multiple interlacing corresponds to all lines of the target sample; performing a second set of multiple interlacing on the target sample along the second direction to form a second detection image according to the electron beam received by the second detector, wherein each interlacing line in the second set of multiple interlacing is different, and the second set of multiple interlacing lines corresponds to all the target sample lines; and generating a detection image of the target sample according to the first detection image and the second detection image.
In an exemplary embodiment of the present disclosure, the first set of multiple interlaced scan line sequences is the same as the second set of multiple interlaced scan line sequences.
In an exemplary embodiment of the present disclosure, the first set of multiple interlaced scan line orders is different from the second set of multiple interlaced scan line orders.
In an exemplary embodiment of the present disclosure, the first plurality of interlaces includes two interlaces, the scan line order being a first interlace corresponding to an odd line and a second interlace corresponding to an even line; the second plurality of interlaces includes two interlaces, the scanning line sequence is that the third interlace corresponds to even lines, and the fourth interlace corresponds to odd lines.
In an exemplary embodiment of the present disclosure, the interlacing the target sample multiple times in the first direction and the second direction to form a detection image of the target sample from the electron beams received by the first detector and the second detector further includes: after forming the second detection image, performing a third set of multiple interlacing of the target sample in the second direction to form a third detection image; and performing a fourth plurality of interlacing operations on the target sample along the first direction to form a fourth detection image.
In one exemplary embodiment of the present disclosure, the generating a detection image of the target sample from the first detection image and the second detection image includes: and generating a detection image of the target sample according to the first detection image, the second detection image, the third detection image and the fourth detection image.
In an exemplary embodiment of the present disclosure, the third set of multiple interlacing corresponds to a different scan line order than the second set of multiple interlacing, and the fourth set of multiple interlacing corresponds to a different scan line order than the third set of multiple interlacing.
In an exemplary embodiment of the present disclosure, the first plurality of interlaces includes two interlaces, the scan line order being a first interlace corresponding to an odd line and a second interlace corresponding to an even line; the second group of multi-interlace scanning comprises two interlaces, the scanning line sequence is that the third interlace scanning corresponds to even lines, and the fourth interlace scanning corresponds to odd lines; the third group of multi-interlace scanning comprises two interlaces, the scanning line sequence is that the fifth interlace scanning corresponds to an odd line, and the sixth interlace scanning corresponds to an even line; the fourth plurality of interlaces includes two interlaces, and the scanning line sequence is that the seventh interlace corresponds to an even line and the eighth interlace corresponds to an odd line.
In an exemplary embodiment of the present disclosure, one of the interlacing corresponds to one scanning direction, and two adjacent interlacing corresponds to opposite scanning directions.
In one exemplary embodiment of the present disclosure, the interlacing the target sample multiple times in the first direction and the second direction to form a detection image of the target sample from the electron beams received by the first detector and the second detector includes: scanning odd lines in a first direction in first interlacing to generate a first sub-detection image according to the received information of the first detector; scanning the even lines in a second direction in a second interlacing to generate a second sub-detection image according to the received information of the second detector; scanning the odd lines in a second direction in a third interlacing to generate a third sub-detection image according to the received information of the second detector; scanning the even number lines in the first direction in fourth interlacing to generate a fourth sub-detection image according to the receiving information of the first detector; and generating a detection image of the target sample according to the first sub-detection image, the second sub-detection image, the third sub-detection image and the fourth sub-detection image.
In one exemplary embodiment of the present disclosure, the interlaced scanning corresponds to a plurality of target lines at a time, and scanning directions corresponding to adjacent target lines in the interlaced scanning are opposite at a time.
In an exemplary embodiment of the present disclosure, the scanning direction setting order corresponding to adjacent two interlacing is the same.
In an exemplary embodiment of the present disclosure, the scanning direction setting order corresponding to adjacent two interlacing is reversed.
According to a second aspect of the present disclosure, there is provided a scanning electron microscope comprising: a lens barrel disposed along a vertical axis for emitting an electron beam along the vertical axis; an electron deflector disposed around the vertical axis below the lens barrel for controlling deflection of the electron beam emitted from the lens barrel according to a control signal; a sample stage disposed below the electron deflector along the vertical axis, horizontally disposed, for horizontally carrying a target sample so that the target sample receives the deflected electron beam; a first detector and a second detector disposed opposite along the vertical axis between the sample stage and the electron deflector for receiving the electron beam reflected by the target sample; a controller connected to the lens barrel, the electronic deflector, the first detector and the second detector for performing the scanning method as set forth in any one of the above, controlling the lens barrel to emit the electron beam, transmitting the control signal to the electronic deflector to control the deflection of the electron beam, and receiving the electron beam received by the first detector and the second detector to generate a detection image of the target sample.
According to the embodiment of the disclosure, the two detectors with opposite directions are arranged, and the target sample is scanned in two directions, so that the problem of uneven imaging definition caused by the difference of scanning sequence and scanning direction can be solved; by carrying out interlaced scanning on the target sample, the problem of uneven imaging brightness caused by adjacent line electron flow brought by progressive scanning can be solved, the imaging definition of a detection image of the CDSEM is greatly optimized, and the detection accuracy of the target sample is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. It will be apparent to those of ordinary skill in the art that the drawings in the following description are merely examples of the disclosure and that other drawings may be derived from them without undue effort.
Fig. 1 is a schematic diagram of a structure of a scanning electron microscope in an exemplary embodiment of the present disclosure.
Fig. 2 is a flowchart of a scanning method of a scanning electron microscope provided in an embodiment of the present disclosure.
FIG. 3 is a flow chart of a scanning method in one embodiment of the present disclosure.
Fig. 4 is a flow chart of a scanning method in another embodiment of the present disclosure.
Fig. 5 is a schematic diagram of a scanning method in the embodiment shown in fig. 4.
FIG. 6 is a schematic diagram of a scanning method in one embodiment of the present disclosure.
Fig. 7 is a schematic diagram of a scanning method in yet another embodiment of the present disclosure.
Fig. 8 is a schematic diagram of a scanning method in one embodiment of the present disclosure.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the present disclosure. One skilled in the relevant art will recognize, however, that the aspects of the disclosure may be practiced without one or more of the specific details, or with other methods, components, devices, steps, etc. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
Furthermore, the drawings are only schematic illustrations of the present disclosure, in which the same reference numerals denote the same or similar parts, and thus a repetitive description thereof will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in software or in one or more hardware modules or integrated circuits or in different networks and/or processor devices and/or microcontroller devices.
The following describes example embodiments of the present disclosure in detail with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a structure of a scanning electron microscope in an exemplary embodiment of the present disclosure. The scanning electron microscope 100 shown in fig. 1 may be used to perform the scanning method provided by embodiments of the present disclosure.
Referring to fig. 1, a scanning electron microscope 100 may include:
a lens barrel 1 disposed along a vertical axis for emitting an electron beam along the vertical axis;
an electron deflector 2 disposed around the vertical axis below the lens barrel 1 for controlling deflection of the electron beam emitted from the lens barrel 1 according to a control signal;
A sample stage 3 disposed below the electron deflector 2 along a vertical axis, horizontally disposed, for horizontally carrying the target sample 10 so that the target sample 10 receives the deflected electron beam;
A first detector 4 and a second detector 5, oppositely arranged along a vertical axis between the sample stage 3 and the electron deflector 2, for receiving the electron beam reflected by the target sample 10;
A controller 6 connected to the lens barrel 1, the electronic deflector 2, the first detector 4 and the second detector 5 for performing a scanning method provided later in the embodiments of the present disclosure, controlling the lens barrel 1 to emit an electron beam, transmitting a control signal to the electronic deflector 2 to deflect, and receiving the electron beam received by the first detector 4 and the second detector 5 to generate a detection image of the target sample 10.
The scanning electron microscope 100 shown in fig. 1 may be a scanning electron microscope for feature size measurement, i.e., a CDSEM. The target sample 10 may be an integrated circuit to be tested, for example, a wafer, a chip, etc., where the wafer may be a semi-finished wafer after a certain process of coating photoresist and performing exposure and development of photoresist is completed, and the sem 100 is used to scan defects of the photoresist exposed and developed in the target sample 10.
In the actual control process, the controller 6 is used for outputting a first control signal to the electronic deflector 2 to control the electronic beam emitted by the lens barrel 1 to gradually change from deflection to a second side in the horizontal direction through the electronic deflector 2, so as to realize one-line scanning of the target sample; or the controller 6 is used for outputting a second control signal to the electronic deflector 2 so as to control the electron beam emitted by the lens barrel 1 to be deflected from the second side deflected to the horizontal direction to the first side deflected to the horizontal direction through the electronic deflector 2, thereby realizing one-line scanning of the target sample.
In the presently disclosed embodiment, the horizontal direction refers to one direction in a plane parallel to the carrying surface of the sample stage 3. The first detector 4 is arranged on a second side in the horizontal direction, and the second detector 5 is arranged on a first side in the horizontal direction; or the first detector 4 is arranged on a first side in the horizontal direction and the second detector 5 is arranged on a second side in the horizontal direction.
In the following description, for simplicity of description, the lens barrel 1 is defined as deflecting gradually from a first side in the horizontal direction to a second side in the horizontal direction to effect one-line scanning of the target sample as scanning the target sample 10 in the first direction, the lens barrel 1 is defined as deflecting gradually from the second side in the horizontal direction to the first side in the horizontal direction to effect one-line scanning of the target sample as scanning the target sample 10 in the second direction, and as can be seen from the above definition, the second direction is the opposite direction of the first direction, and the first direction is the opposite direction of the second direction.
Although in the embodiment shown in fig. 1, only two opposing first detectors 4 and second detectors 5 are provided, in other embodiments of the present disclosure, 4 opposing detectors (two on each side) or 6 opposing detectors (three on each side) may be provided, and it is only necessary to ensure that the number of opposing detectors is equal and the positions are symmetrical, which is not particularly limited in the present disclosure.
In another embodiment of the present disclosure, the scanning electron microscope 100 may further include a motion mechanism 7, where the motion mechanism 7 is connected to the sample stage 3 and the controller 6, and is configured to drive the sample stage 3 to move in coordination with the deflection of the electron beam according to a motion signal sent by the controller 6, so as to realize a line scan of the target sample.
In this embodiment, the controller 6 is configured to output a third control signal to the electronic deflector 2 to control the deflection of the electron beam to the first side in the horizontal direction, and simultaneously output a first motion signal to the motion mechanism 7 to control the movement of the sample stage 3 from the second side in the horizontal direction to the first side in the horizontal direction, so as to perform scanning of the target sample 10 from the first side in the horizontal direction to the second side in the horizontal direction, that is, scanning of one line of the target sample 10 in the first direction.
Or the controller 6 outputs a fourth control signal to the electron deflector 2 to control the electron beam to deflect to the second side in the horizontal direction, and simultaneously outputs a second motion signal to the motion mechanism 7 to control the sample stage 3 to move from the first side in the horizontal direction to the second side in the horizontal direction so as to realize scanning of one line of the target samples 10 in the second direction.
The movement mechanism 7 may or may not be provided. When the movement mechanism 7 is provided, the electron beam is not deflected, and the sample stage 3 is moved, so that the electron beam and the target sample 10 can perform relative movement in the first direction or the second direction, that is, the target sample 10 can be scanned in the first direction or the second direction. If the movement mechanism 7 is not provided, or if the movement mechanism 7 is not working, the electron beam deflection can be controlled by controlling the electron deflector 2, so that the electron beam and the target sample 10 can perform relative movement in the first direction or the second direction, that is, the target sample 10 can be scanned in the first direction or the second direction.
Whether or not the moving structure 7 is provided, the control process described above is collectively referred to as "scanning the target sample in the first direction/the second direction" in the subsequent embodiments of the present disclosure to simplify the description.
Fig. 2 is a flowchart of a scanning method of a scanning electron microscope provided in an embodiment of the present disclosure. The scanning method shown in fig. 2 is performed by the scanning electron microscope shown in fig. 1.
Referring to fig. 2, in an embodiment of the present disclosure, a scanning method 200 may include:
The target sample is interlaced a plurality of times in a first direction and a second direction to form a detection image of the target sample based on the electron beams received by the first detector and the second detector.
The adjacent two interlacing scanning lines are different, the multiple interlacing scanning lines correspond to all lines of the target sample, each line of the target sample corresponds to at least two interlacing scanning lines, and the at least two interlacing scanning lines at least comprise scanning of a first direction of the line and scanning of a second direction of the line, and the second direction is opposite to the first direction.
The existing scanning method of the scanning electron microscope is to sequentially scan the target sample from top to bottom according to a scanning mode from left to right. The sub-detection images generated by one complete scan from top to bottom may be labeled as frame×1, and finally, the detection images of the target sample combined by multiple scan results may be labeled as frame×4, frame×8, or frame×16, where 4, 8, and 16 are the number of generated sub-detection images, respectively.
According to analysis, the reason why the detection image of the existing scanning electron microscope is uneven in imaging and uneven in brightness is that holes are left after electrons are reflected by the electron beam in the first scanning area, electrons in the adjacent non-scanning area flow to the hole part of the first scanning area, the electron reflection amount of the second scanning area is obviously reduced relative to the electron reflection amount of the first scanning area, and when the brightness of the area of the detection image is marked according to the electron reflection amounts of different areas, the brightness of the first scanning area is higher than that of the second scanning area, so that the imaging brightness is uneven. In addition, because the hardware detection device in the existing scanning electron microscope is arranged on one side of the machine, the reflected electrons on the other side are consumed in the deflection process due to the distance, and therefore the image fitting result obtained according to the electron reflection quantity is different from top to bottom and from left to right, and finally the measurement result is inaccurate.
In the embodiment of the disclosure, in order to solve the above-mentioned problem, first, a scanning electron microscope is subjected to machine improvement, that is, two detectors with opposite directions are provided, so as to scan a target sample from two opposite directions, overcome electron loss caused by different exit angles and incidence angles of electrons entering the detectors, and different electron reflection distances, and repair the problem of uneven imaging definition. In addition, the method and the device have the advantages that the target sample is subjected to interlaced scanning, proper electron recovery time is given to the non-scanning area adjacent to the pre-scanning area, the reduction of electron reflection quantity of the post-scanning area caused by carrier coupling between the adjacent areas is overcome, and the problems of uneven electron quantity and uneven imaging brightness of electron beams reflected on the surface of an object are solved.
Fig. 3 is a flow chart of a scanning method 200 in one embodiment of the present disclosure.
Referring to fig. 3, in one exemplary embodiment of the present disclosure, a scanning method 200 may include:
Step S31, carrying out first group of multiple interlacing on a target sample along a first direction so as to form a first detection image according to electron beams received by a first detector, wherein lines corresponding to each interlacing in the first group of multiple interlacing are different, and all lines corresponding to the target sample in the first group of multiple interlacing;
Step S32, carrying out second group of multiple interlacing on the target sample along the second direction so as to form a second detection image according to the electron beam received by the second detector, wherein the lines corresponding to each interlacing in the second group of multiple interlacing are different, and the second group of multiple interlacing corresponds to all lines of the target sample;
Step S33, generating a detection image of the target sample according to the first detection image and the second detection image.
In the embodiment shown in fig. 3, the target sample is scanned in two directions sequentially, and finally, the detection image of the target sample is generated according to the scanning detection image (first detection image) along the first direction and the scanning detection image (second detection image) along the second direction.
In the first direction scan, referring to fig. 1, each line of the target sample 10 is scanned along the first direction, and the reflected electron beam is received by the first detector 4. In the second direction scanning, each line of the target sample 10 is scanned in the second direction, and the reflected electron beam is received by the second detector 5.
Each of the corresponding scans in each direction includes multiple interlacing scans, and each interlacing scan can generate a Frame of sub-detection image (i.e., the Frame described above). Interlaced scanning means that the two scanned lines are not adjacent. In an embodiment of the present disclosure, one interlace corresponds to a plurality of target lines, with at least one line spacing between adjacent target lines. Assuming that the scanning electron microscope 100 divides the detection of the target sample 10 into N rows, and the serial number of the smallest row is 1, when the target rows are separated by one row, one interlace scanning may correspond to the 1st, 3 rd, 5 th, 7 th, 9 … … th, or 2 nd, 4 th, 6 th, 8 th, 10 th … … th rows of the target sample; when the target lines are separated by two lines, one interlace scanning can correspond to lines 1,4, 7 and 10 … …, can correspond to lines 2, 5, 8 and 11 … …, and can also correspond to lines 3, 6, 9 and 12 … …. And so on, will not be described in detail.
When the target lines of one interlacing are separated by one line, one group of interlacing corresponds to at least two interlacing (for example, the initial scanning lines are respectively the 1 st line and the 2 nd line of interlacing) so as to realize the scanning of all lines of the target sample; when two lines are spaced between the target lines of one interlace scan, one group of interlace scan corresponds to at least three interlace scan (for example, the initial scan line is the three interlace scan of the 1 st line, the 2 nd line, and the 3 rd line respectively) so as to realize the scan of all lines of the target sample.
The scan order described above may be referred to as a scan line order. In the embodiment shown in fig. 2, the first set of multi-interlaced scan lines is in the same order as the second set of multi-interlaced scan lines, or the first set of multi-interlaced scan lines is in a different order than the second set of multi-interlaced scan lines.
When the first set of multiple-interlace scan lines is in the same order as the second set of multiple-interlace scan lines, in one embodiment, the first set of multiple-interlace scan lines includes two-interlace scan lines, the first-interlace scan lines corresponding to odd lines (e.g., lines 1, 3, 5, 7, 9 … …) and the second-interlace scan lines corresponding to even lines (e.g., lines 2, 4, 6, 8, 10 … …); the second set of multiple interlaces includes two interlaces, the scan line order is also the first interlace corresponding to the odd lines and the second interlace corresponding to the even lines. At this time, the first group of multiple interlacing generates 2-Frame sub-detection images through two interlacing, and the second group of multiple interlacing also generates 2-Frame sub-detection images through two interlacing, and generates 4-Frame sub-detection images, that is, frame×4. And finally, generating a detection image of the target sample according to the 4-frame sub-detection image.
When the first set of multiple-interlace scan lines is in a different order than the second set of multiple-interlace scan lines, in one embodiment, the first set of multiple-interlace scan lines includes two-interlace scan lines, the first-interlace scan lines corresponding to odd lines (e.g., lines 1,3, 5, 7, 9 … …) and the second-interlace scan lines corresponding to even lines (e.g., lines 2, 4,6, 8, 10 … …); the second set of multiple interlaces includes two interlaces, the scan line order being the first interlace corresponding to even lines and the second interlace corresponding to odd lines. At this time, the first group of multiple interlacing generates 2-Frame sub-detection images through two interlacing, and the second group of multiple interlacing also generates 2-Frame sub-detection images through two interlacing, and generates 4-Frame sub-detection images, that is, frame×4. And finally, generating a detection image of the target sample according to the 4-frame sub-detection image.
Since the interlacing is used, even if electron transfer (carrier neutralization) occurs in adjacent lines during formation of the first frame sub-detection image, uniformity of scanning effects of two adjacent target lines spaced by at least one line is not affected, and brightness of the sub-detection image formed by the first interlacing is uniform. After forming a frame of sub-detection image, the first group of target lines corresponding to the first interlacing become scanned lines. When the first group of second interlacing is performed, the number of electrons of each target line (non-scanned line) corresponding to the first group of second interlacing is similar (because the relative positional relationship between each target line and the scanned line is the same), and the brightness of the second frame sub-detection image formed by the first group of second interlacing is uniform. The brightness of the first detection image generated by fitting the first frame sub-detection image with uniform brightness and the first frame sub-detection image with uniform brightness is also uniform.
After the first group of second interlacing is completed, the target lines corresponding to the first group of second interlacing are all the latest scanned lines, and all the lines of the target sample are scanned lines in the first direction. Therefore, in the first interlacing of the second group, the scanning direction is changed to the scanning of the second direction, and the problem of reflected electron path difference caused by the scanning direction is overcome.
When the scanning line sequences corresponding to two groups of interlacing scanning are the same, setting the target line corresponding to the second group of first interlacing scanning as a group of target lines with the longest time from the last scanning, namely the target line corresponding to the first group of first interlacing scanning; similarly, in the second group of second interlacing, the target line corresponding to the first group of second interlacing is set as the target line corresponding to the second group of second interlacing, so as to avoid that the same line is scanned by two adjacent interlacing, and the defect of the detected image is caused. In the above example, taking the example that one group of interlace scanning includes only two interlaces, when one group of interlace scanning includes more interlaces, the adjacent two groups of interlace scanning can be set to have the same line sequence, so as to avoid that the adjacent two interlaces scan the same line.
When two groups of scanning line sequences corresponding to the interlacing scanning are set to be different, sub-detection images corresponding to different scanning line sequences can be obtained under the different scanning line sequences, and scanning image differences caused by the scanning line sequence differences are reduced.
Finally, the brightness of the third sub-detection image generated according to the second group of first interlacing is uniform, the brightness of the fourth sub-detection image generated according to the second group of second interlacing is uniform, and the brightness of the second detection image generated according to the third sub-detection image and the fourth sub-detection image is also uniform.
The first detection image reflects the detection effect of scanning from the first direction, the second detection image reflects the detection effect of scanning from the opposite direction of the first direction, and the detection image of the target sample generated according to the first detection image and the second detection image can compensate for uneven imaging definition caused by different electron beam emergent distances due to the detection directions, so that the detection image with even imaging definition and even imaging brightness is generated.
Fig. 4 is a flow chart of a scanning method 200 in another embodiment of the present disclosure.
Referring to fig. 4, in an exemplary embodiment of the present disclosure, the scanning method 200 further includes:
step S41, after forming a second detection image, performing a third group of multiple interlacing on the target sample along a second direction to form a third detection image;
Step S42, performing a fourth plurality of interlacing on the target sample along the first direction to form a fourth detection image.
Although in the embodiment shown in fig. 3, the detection image can be formed by two sets of opposite interlaced scanning, at least 4 frames of detection images containing all the rows of the target sample are required to form a clear detection image capable of accurate detection due to the limited number of reflected electrons per scanning. Since in the embodiment of fig. 3a set of interlaced corresponding detection images can only cover all rows of the target sample, in the embodiment of fig. 4 four sets of interlaced detection of the target sample are required to form a clear detection image of the target sample.
The principle that the scanning line sequence in the second group of multiple interlacing is different from the scanning line sequence in the first group of multiple interlacing is the same, the scanning line sequence corresponding to the third group of multiple interlacing is different from the scanning line sequence corresponding to the second group of multiple interlacing, and the scanning line sequence corresponding to the fourth group of multiple interlacing is different from the scanning line sequence corresponding to the third group of multiple interlacing. Since the line scanning sequences of the adjacent two groups of multiple interlacing are set to be different, the target line corresponding to the last interlacing in the previous group is the same as the target line corresponding to the first interlacing in the next group in the adjacent two groups of multiple interlacing, and enough recovery time is not given to the target line in the previous group. In one embodiment of the present disclosure, when different groups of multiple interlacing scan are set to correspond to different line scan sequences, after each group of multiple interlacing scan is completed, the next group of multiple interlacing scan is started again at a preset time interval, so as to give each target line sufficient recovery time, and avoid reduction of imaging definition caused by continuous scanning of one group of target lines. The above-mentioned preset time period may be obtained according to actual measurement (the preset time period may enable the imaging quality to meet a self-set definition standard), which is not particularly limited in the present disclosure.
In other embodiments of the present disclosure, the third set of multiple interlacing and the fourth set of multiple interlacing may be set to be in the same order as the scan lines of the second set of multiple interlacing, so that the target line corresponding to the first interlacing in the third set of multiple interlacing is different from the target line corresponding to the last interlacing in the second set of multiple interlacing, and the target line corresponding to the first interlacing in the fourth set of multiple interlacing is different from the target line corresponding to the last interlacing in the third set of multiple interlacing, so that a sufficient recovery time is given to each target line to ensure imaging definition.
Fig. 5 is a schematic diagram of a scanning method in the embodiment shown in fig. 4.
Referring to fig. 5, assume that the target sample 500 is divided into 16 rows (the actual number of rows is much greater than 16, fig. 5 being merely an example), with the sequence numbers of each row being as shown. The scanning of the odd lines in the target sample 500 is shown in solid lines, the scanning of the even lines in the target sample 500 is shown in broken lines, and the scanning direction is shown in arrows. In each interlace scanning, for example, the target sample 500 may be scanned in the order from top to bottom in fig. 5, that is, in the order of the line numbers from the small to the large.
In one embodiment, the first set of multiple interlaces 51 may include two interlaces, with the scan line order being a first interlace 511 for odd lines and a second interlace 512 for even lines; the second set of multiple interlaces 52 includes two interlaces, with the scan line order being the third interlace 521 for even lines and the fourth interlace 522 for odd lines; the third group of multiple interlacing 53 includes two interlacing, the scanning line order is that the fifth interlacing 531 corresponds to the odd lines and the sixth interlacing 532 corresponds to the even lines; the fourth set of multiple interlaces 54 includes two interlaces with the seventh interlace 541 corresponding to even lines and the eighth interlace 542 corresponding to odd lines.
By the first plurality of interlacing 51, a first detection image with the corresponding scanning direction being the first direction can be generated; by the second plurality of interlacing 52, a second detected image may be generated with the corresponding scanning direction being the second direction; by the third plurality of interlace 53, a third detection image in which the corresponding scanning direction is the second direction can be generated; by the fourth plurality of interlaces 54, a fourth detection image corresponding to the scanning direction being the first direction can be generated.
Finally, a detection image of the target sample is generated according to the first detection image, the second detection image, the third detection image and the fourth detection image.
In the embodiment of the disclosure, a group of two interlacing scanning is used to obtain a Frame detection image containing scanning information of all lines of a target sample, four Frame detection images formed in two opposite scanning directions and in two different scanning line sequences are finally generated, frame x 4 is formed, a clear detection image of the target sample is formed by means of fitting and the like, imaging differences caused by the scanning directions and the scanning line sequences can be overcome, and imaging accuracy of the scanning image is improved. As the number of the detection images participating in the calculation is increased, the definition and the contrast of the finally generated target sample detection image are better than those of the embodiment shown in fig. 3, and in addition, the method has the advantages of uniform imaging definition, uniform imaging brightness and the like of the embodiment shown in fig. 3.
In the embodiments shown in fig. 3 and 4, one interlace corresponds to one scan direction, and in one group of interlaces, the scan directions corresponding to two adjacent interlaces are the same, and the scan directions of different groups of interlaces are different.
In yet another embodiment of the present disclosure, one scan direction may be set for one interlace scan, and the scan directions for two adjacent interlaces are opposite. In this embodiment, the target samples may still be scanned in groups.
FIG. 6 is a schematic diagram of a scanning method in one embodiment of the present disclosure.
Referring to fig. 6, in one embodiment, the first set of multiple interlaces 61 may be provided to include a first interlace 611 and a second interlace 612, the first interlace 611 being a first direction scan for odd lines (line numbers see fig. 6) and the second interlace 612 being a second direction scan for even lines.
Meanwhile, let the second set of multiple interlaces 62 include a third interlace 621 and a fourth interlace 622, the third interlace 621 being the second direction scan for the odd lines and the fourth interlace 622 being the first direction scan for the even lines.
Thus, the scanning of the odd lines of the target sample in the first direction and the scanning of the odd lines of the target sample in the second direction are completed, and the scanning of the even lines of the target sample in the first direction and the scanning of the even lines of the target sample in the second direction are completed, so that the scanning of all lines of the target sample in two directions is realized. In this embodiment, the first sub-detection image may be generated from the data of the first detector 4 after the end of the first interlacing 611, the second sub-detection image may be generated from the data of the second detector 5 after the end of the second interlacing 612, the third sub-detection image may be generated from the data of the second detector 5 after the end of the third interlacing 613, the fourth sub-detection image may be generated from the data of the first detector 4 after the end of the fourth interlacing 614, and finally the detection image of the target sample may be generated from the first sub-detection image, the second sub-detection image, the third sub-detection image, and the fourth sub-detection image.
In the embodiment shown in fig. 6, the four sub-detection images correspond to Frame x 2, and in order to enhance imaging quality, a third group of interlacing detection and a fourth group of interlacing detection may be added according to the principles of the embodiment shown in fig. 4.
In still another embodiment of the present disclosure, the scanning directions corresponding to the adjacent target lines in one interlace scanning may be set to be opposite.
Fig. 7 is a schematic diagram of a scanning method in yet another embodiment of the present disclosure.
Referring to fig. 7, in one embodiment, it may be arranged to scan a plurality of target lines alternately in a first direction and a second direction in one interlace.
The first group of multi-interlacing 71 is provided to include a first interlacing 711 for alternately scanning odd lines (line numbers see fig. 7) in the first direction and a second interlacing 712 for alternately scanning even lines in the first direction and the second direction in the sequence number.
Meanwhile, let the second set of multiple interlaces 72 include a third interlace 721 and a fourth interlace 722, the third interlace 721 being the second direction and first direction alternating scanning of the odd lines, and the fourth interlace 722 being the second direction and first direction scanning of the even lines.
Thus, the scanning of the odd lines of the target sample in the first direction and the scanning of the odd lines of the target sample in the second direction are completed, and the scanning of the even lines of the target sample in the first direction and the scanning of the even lines of the target sample in the second direction are completed, so that the scanning of all lines of the target sample in two directions is realized. In this embodiment, after the four interlacing operations are completed, a first detection image may be generated according to the signal received by the first detector, a second detection image may be generated according to the signal received by the second detector, and finally, a detection image of the target sample may be generated according to the first detection image and the second detection image.
In the embodiment shown in fig. 7, the detection process corresponds to two detection images covering all rows of the target sample, i.e. Frame x 2, and in order to enhance the imaging quality, a third group of interlacing detection and a fourth group of interlacing detection may be added according to the principles of the embodiment shown in fig. 4.
In the detection method shown in fig. 7, when the electron beam gradually deflects from the left side in fig. 7 to the right side in fig. 7, that is, the scanning in the first direction is completed, the next target line is directly scanned without adjusting the deflection direction of the electron beam back to the left side in fig. 7, so that the time for adjusting the deflection angle of the electron beam can be saved, that is, the electronic deflector 2 in fig. 1 is not required to be reset, and the backward adjustment according to the current deflection angle is continued. When the number of scan lines is large, the scan efficiency can be improved.
In the detection method shown in fig. 7, the scan direction setting order corresponding to the adjacent two-time interlacing is the same, and in other embodiments of the present disclosure, the scan direction setting order corresponding to the adjacent two-time interlacing may also be opposite.
Fig. 8 is a schematic diagram of a scanning method in one embodiment of the present disclosure.
Referring to fig. 8, the first group of multiple interlacing 81 is provided to include a first interlacing 811 for alternately scanning odd lines (line numbers see fig. 8) in the first direction and a second interlacing 812 for alternately scanning even lines in the second direction in the sequence number, in the sequence number.
Meanwhile, the second plurality of interlacing 82 is provided to include a third interlacing 821 and a fourth interlacing 822, the third interlacing 821 being scanning for alternating the second direction and the first direction for odd lines, and the fourth interlacing 822 being scanning for both the first direction and the second direction for even lines.
Thus, the scanning of the odd lines of the target sample in the first direction and the scanning of the odd lines of the target sample in the second direction are completed, and the scanning of the even lines of the target sample in the first direction and the scanning of the even lines of the target sample in the second direction are completed, so that the scanning of all lines of the target sample in two directions is realized. As in the embodiment shown in fig. 7, after the four interlacing passes, a first detection image is generated according to the signal received by the first detector, a second detection image is generated according to the signal received by the second detector, and finally, a detection image of the target sample is generated according to the first detection image and the second detection image.
Also in the embodiment shown in fig. 8, the detection procedure corresponds to two detection images covering all rows of the target sample, i.e. Frame x 2, and in order to enhance the imaging quality, a third set of interlacing detection and a fourth set of interlacing detection may be added according to the principles of the embodiment shown in fig. 4.
The above embodiments are only limited examples, and in practical implementation, a person skilled in the art may set, according to actual needs, a relationship between a target line and a detection direction of each interlace detection, a relationship between a target line and a detection direction of two adjacent interlaces detection, the number of interlaces detected in each group of interlaces detection, and the number of groups of multiple interlaces detection, so long as it is capable of guaranteeing that interlace scanning in a first direction and interlace scanning in a second direction are performed on each line of a target sample.
In summary, according to the embodiment of the disclosure, by arranging two detectors with opposite directions and scanning the target sample in two directions, the problem of uneven imaging definition caused by the difference of the scanning sequence and the scanning direction can be solved; by carrying out interlaced scanning on the target sample, the problem of uneven imaging brightness caused by adjacent line electron flow brought by progressive scanning can be solved, the imaging definition of a detection image of the CDSEM is greatly optimized, and the detection accuracy of the target sample is improved.
It should be noted that although in the above detailed description several modules or units of a device for action execution are mentioned, such a division is not mandatory. Indeed, the features and functionality of two or more modules or units described above may be embodied in one module or unit in accordance with embodiments of the present disclosure. Conversely, the features and functions of one module or unit described above may be further divided into a plurality of modules or units to be embodied.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any adaptations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims (15)

1. A scanning method of a scanning electron microscope, characterized by being performed by a scanning electron microscope including a first detector and a second detector disposed opposite to each other, the scanning method comprising:
performing interlaced scanning on a target sample for multiple times in a first direction and a second direction to form a detection image of the target sample according to electron beams received by the first detector and the second detector;
The adjacent two lines corresponding to the interlacing are different, the multiple interlacing corresponds to all lines of the target sample, each line of the target sample corresponds to at least two interlacing, and the at least two interlacing at least comprises the scanning of the line in the first direction and the scanning of the line in the second direction, and the second direction is the opposite direction of the first direction.
2. The scanning method of claim 1, wherein interlacing the target sample a plurality of times in a first direction and a second direction to form a detection image of the target sample from the electron beams received by the first detector and the second detector comprises:
Performing a first group of multiple interlacing on a target sample along the first direction to form a first detection image according to the electron beam received by the first detector, wherein lines corresponding to each interlacing in the first group of multiple interlacing are different, and the first group of multiple interlacing corresponds to all lines of the target sample;
Performing a second set of multiple interlacing on the target sample along the second direction to form a second detection image according to the electron beam received by the second detector, wherein each interlacing line in the second set of multiple interlacing is different, and the second set of multiple interlacing lines corresponds to all the target sample lines;
and generating a detection image of the target sample according to the first detection image and the second detection image.
3. The scanning method according to claim 2, wherein the first set of multi-interlaced scan lines is in the same order as the second set of multi-interlaced scan lines.
4. The scanning method according to claim 2, wherein the first set of multi-interlaced scan lines is in a different order than the second set of multi-interlaced scan lines.
5. The scanning method according to claim 2 or 4, wherein the first plurality of interlacing includes two interlacing, the scanning line order being a first interlacing corresponding to odd lines and a second interlacing corresponding to even lines; the second plurality of interlaces includes two interlaces, the scanning line sequence is that the third interlace corresponds to even lines, and the fourth interlace corresponds to odd lines.
6. The scanning method of claim 2, wherein interlacing the target sample a plurality of times in the first direction and the second direction to form a detection image of the target sample from the electron beams received by the first detector and the second detector further comprises:
After forming the second detection image, performing a third set of multiple interlacing of the target sample in the second direction to form a third detection image;
and performing a fourth plurality of interlacing operations on the target sample along the first direction to form a fourth detection image.
7. The scanning method of claim 6, wherein said generating a detection image of said target sample from said first detection image and said second detection image comprises:
And generating a detection image of the target sample according to the first detection image, the second detection image, the third detection image and the fourth detection image.
8. The scanning method according to claim 6, wherein a scanning line order corresponding to the third plurality of interlaces is different from a scanning line order corresponding to the second plurality of interlaces, and a scanning line order corresponding to the fourth plurality of interlaces is different from a scanning line order corresponding to the third plurality of interlaces.
9. The scanning method according to claim 8, wherein,
The first group of multi-interlace scanning comprises two interlaces, the scanning line sequence is that the first interlace scanning corresponds to an odd line, and the second interlace scanning corresponds to an even line;
the second group of multi-interlace scanning comprises two interlaces, the scanning line sequence is that the third interlace scanning corresponds to even lines, and the fourth interlace scanning corresponds to odd lines;
the third group of multi-interlace scanning comprises two interlaces, the scanning line sequence is that the fifth interlace scanning corresponds to an odd line, and the sixth interlace scanning corresponds to an even line;
The fourth plurality of interlaces includes two interlaces, and the scanning line sequence is that the seventh interlace corresponds to an even line and the eighth interlace corresponds to an odd line.
10. The scanning method according to claim 1, wherein one of said interlacing corresponds to one scanning direction and two adjacent interlacing corresponds to opposite scanning directions.
11. The scanning method of claim 10, wherein interlacing the target sample a plurality of times in the first direction and the second direction to form a detection image of the target sample from the electron beams received by the first detector and the second detector comprises:
Scanning odd lines in a first direction in first interlacing to generate a first sub-detection image according to the received information of the first detector;
scanning the even lines in a second direction in a second interlacing to generate a second sub-detection image according to the received information of the second detector;
scanning the odd lines in a second direction in a third interlacing to generate a third sub-detection image according to the received information of the second detector;
scanning the even number lines in the first direction in fourth interlacing to generate a fourth sub-detection image according to the receiving information of the first detector;
And generating a detection image of the target sample according to the first sub-detection image, the second sub-detection image, the third sub-detection image and the fourth sub-detection image.
12. The scanning method according to claim 1, wherein a plurality of target lines are corresponding to one of the interlacing, and scanning directions corresponding to adjacent ones of the target lines are opposite in one of the interlacing.
13. The scanning method according to claim 12, wherein the scanning directions corresponding to the adjacent two interlacing scan are arranged in the same order.
14. The scanning method according to claim 12, wherein the scanning directions corresponding to the adjacent two interlacing are arranged in reverse order.
15. A scanning electron microscope, the scanning electron microscope comprising:
A lens barrel disposed along a vertical axis for emitting an electron beam along the vertical axis;
an electron deflector disposed around the vertical axis below the lens barrel for controlling deflection of the electron beam emitted from the lens barrel according to a control signal;
A sample stage disposed below the electron deflector along the vertical axis, horizontally disposed, for horizontally carrying a target sample so that the target sample receives the deflected electron beam;
a first detector and a second detector disposed opposite along the vertical axis between the sample stage and the electron deflector for receiving the electron beam reflected by the target sample;
A controller connected to the barrel, the electron deflector, the first detector, and the second detector for performing the scanning method of any one of claims 1 to 14, controlling the barrel to emit the electron beam, transmitting the control signal to the electron deflector to control the electron beam deflection, and receiving the electron beams received by the first detector and the second detector to generate a detection image of the target sample.
CN202211339117.3A 2022-10-28 2022-10-28 Scanning method of scanning electron microscope and scanning electron microscope Pending CN117990019A (en)

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US5302828A (en) * 1992-12-03 1994-04-12 Metrologix Corporation Scanning techniques in particle beam devices for reducing the effects of surface charge accumulation
JP2001110351A (en) * 1999-10-05 2001-04-20 Hitachi Ltd Scanning electron microscope
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