CN117979813A - Method for obtaining superconducting material and superconducting material - Google Patents
Method for obtaining superconducting material and superconducting material Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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Abstract
The application discloses a superconducting material and an acquisition method thereof, and belongs to the technical field of superconduction. The method for obtaining the superconducting material comprises the following steps: at least one of structure regulation and element modification is carried out on the layered material, so as to obtain the treated layered material; acquiring physical property parameters of the treated layered material, and determining whether the physical property parameters of the treated layered material meet at least one of the following threshold conditions: the debye temperature is greater than or equal to a first threshold, the electron state density reaches a second threshold, and the interlayer potential is greater than or equal to a third threshold; if yes, determining that the superconducting transition temperature of the treated layered material is greater than or equal to the superconducting transition temperature threshold, wherein the treated layered material is the target superconducting material. The method can design the target superconducting material, regulate and control the laminar material by regulating and controlling the influencing factors of the superconducting transition temperature, and provide support for designing and obtaining the target superconducting material with higher superconducting transition temperature.
Description
Technical Field
The present disclosure relates to the field of semiconductor memory technology, and in particular, to a method for obtaining a superconducting material and a superconducting material.
Background
The superconducting phenomenon refers to a phenomenon in which the electrical resistance of a material drops to zero below a temperature, which is called the superconducting transition temperature or critical transition temperature (Tc). Materials having a superconducting phenomenon are called superconducting materials, and it is desirable that the superconducting transition temperature of the superconducting material is as high as possible so that the superconducting material can be easily applied.
Currently, studies on superconducting materials, particularly high-temperature superconducting materials, are generally based on metals or metal compounds such as copper oxides, iron-based materials, and the like, wherein the high-temperature superconducting material refers to a superconducting material having a superconducting transition temperature of 77K or more and capable of operating under liquid nitrogen temperature conditions.
However, the superconducting material obtained based on the metal or the metal compound is difficult in terms of improving the superconducting transition temperature, so that the preparation process of the high-temperature superconducting material is complex and has high cost.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
In view of this, the present disclosure provides a method for obtaining a superconducting material and a superconducting material capable of solving technical problems existing in the related art.
Specifically, the method comprises the following technical scheme:
in one aspect, an embodiment of the present disclosure provides a method for obtaining a superconducting material, including: at least one of structure regulation and element modification is carried out on the layered material, so as to obtain the treated layered material;
Obtaining physical property parameters of the treated layered material, and determining whether the physical property parameters of the treated layered material meet at least one of the following threshold conditions: the debye temperature is greater than or equal to a first threshold, the electron state density reaches a second threshold, and the interlayer potential is greater than or equal to a third threshold;
if yes, determining that the superconducting transition temperature of the treated layered material is greater than or equal to a superconducting transition temperature threshold, wherein the treated layered material is a target superconducting material.
According to the method for obtaining the superconducting material, provided by the embodiment of the disclosure, the layered material is used as a processing object, and at least one of the structure and the material of the layered material is changed by processing the layered material, so that the purpose of changing the physical parameters of the layered material is achieved, wherein the physical parameters comprise at least one of Debye temperature, electron state density and interlayer potential. The physical property parameters of the treated layered material are obtained and compared with corresponding thresholds, whether the physical property parameters meet at least one threshold condition is determined, if yes, the superconducting transition temperature of the treated layered material is larger than or equal to the superconducting transition temperature threshold, which means that the structural regulation and/or element modification of the layered material are feasible, and the regulation and control of the superconducting transition temperature of the layered material can be realized based on the treatment means, so that the layered material is treated into the superconducting material. Therefore, according to the method for acquiring the superconducting material, provided by the embodiment of the disclosure, the laminar material is regulated and controlled by regulating and controlling the influencing factors of the superconducting transition temperature, so that the superconducting transition temperature of the target superconducting material can be increased as much as possible, a support is provided for designing and acquiring the superconducting material with higher superconducting transition temperature, and the method for acquiring the superconducting material has the advantages of accuracy, high efficiency, convenience, mass design benefit, low cost and the like.
In some possible implementations, the structural modulation of the layered material includes at least one of the following modulation measures:
regulating and controlling the layer torsion angle of the layered material, regulating and controlling the number of layers of the layered material and regulating and controlling the arrangement mode among the layers of the layered material.
The structure of the treated layered material can be changed by changing the torsion angle of the layers, the number of the layers and the arrangement mode between the layers, so that at least one of the Debye temperature, the state density and the interlayer potential of the layered material is changed.
In some possible implementations, the adjusting the layer torsion angle of the layered material includes:
determining one or more reference layers in the layered material;
And defining a layer adjacent to the reference layer in the layered material as a regulating layer, and regulating the torsion angle of the regulating layer.
In some possible implementations, the controlling the torsion angle of the controlling layer includes at least one of the following torsion means:
twisting the regulating layer by using a probe, twisting the regulating layer by using a thermal annealing process, twisting the regulating layer by using a physical tearing process, and twisting the regulating layer by using a polymer support transfer method.
In some possible implementations, the controlling the number of layers of the layered material includes:
Defining a plurality of material layers of different kinds in the layered material;
The number of the at least one material layer is regulated.
In some possible implementations, the adjusting the arrangement manner between layers of the layered material includes:
Defining a plurality of material layers of different kinds in the layered material;
The lamination sequence between the different kinds of material layers is regulated and controlled.
In some possible implementations, the elemental modification of the layered material includes at least one of the following modifications:
Element doping is performed between layers of the layered material, element doping is performed within layers of the layered material, and element substitution is performed within layers of the layered material.
The interlayer element doping, the in-layer element doping and the in-layer element replacement can change the physical and chemical properties of the treated layered material, so that at least one of the debye temperature, the state density and the interlayer potential of the layered material is changed.
In some possible implementations, the elemental doping is performed by at least one of the following doping means: ion implantation process, atomic force microscope probe treatment process, atomic layer transfer process.
In some possible implementations, the layered material includes a plurality of material layers arranged in a stacked manner, the plurality of material layers being the same material;
the material layer is graphene, h-BN, moS 2、TaS2、WTe2、Mg2 B, cuO, BP or FeSe/STO.
In some possible implementations, the layered material includes a plurality of material layers in a stacked arrangement, the plurality of material layers being at least partially different in material;
The material layer is selected from at least one of graphene, h-BN and MoS 2、TaS2、WTe2、Mg2 B, cuO, BP, feSe/STO.
On the other hand, the embodiment of the disclosure also provides a superconducting material, which is prepared by the method for obtaining the superconducting material.
For example, the superconducting material may be a high-temperature superconducting material whose superconducting transition temperature can be significantly raised relative to the related art.
Drawings
Fig. 1 is a graph of a function based on f (t) = lntsech 2 t provided by an embodiment of the present disclosure;
FIG. 2 is a schematic structural view of an exemplary laminated unit provided in an embodiment of the present disclosure;
Fig. 3 is a schematic structural view of another exemplary laminated unit provided by an embodiment of the present disclosure;
Fig. 4 is a schematic structural view of still another exemplary laminated unit provided in an embodiment of the present disclosure;
FIG. 5 is a graph of the electron density distribution of a treated layered material provided in example 1 of the present disclosure;
FIG. 6 is a graph of the energy band distribution of the treated layered material provided in example 1 of the present disclosure;
FIG. 7 is a graph of the electron density distribution of a layered material after processing provided in example 2 of the present disclosure;
Fig. 8 is a band distribution graph of a treated layered material provided in example 2 of the present disclosure.
Detailed Description
In order to make the technical scheme and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in further detail below with reference to the accompanying drawings.
The superconducting phenomenon refers to a phenomenon in which the electrical resistance of a material drops to zero below a temperature, which is called the superconducting transition temperature or critical transition temperature (Tc). The superconducting phenomenon is characterized by zero resistance and complete diamagnetism, and a material having the superconducting phenomenon is called a superconducting material, and it is desirable that the superconducting transition temperature of the superconducting material is as high as possible so that the superconducting material can be easily applied.
Currently, studies on superconducting materials, particularly high-temperature superconducting materials, are generally based on metals or metal compounds such as copper oxides, iron-based materials, and the like, wherein the high-temperature superconducting material refers to a superconducting material having a superconducting transition temperature of 77K or more and capable of operating under liquid nitrogen temperature conditions.
However, the superconducting material obtained based on the metal or the metal compound is difficult in terms of improving the superconducting transition temperature, so that the preparation process of the high-temperature superconducting material is complex and has high cost. It can be seen that there is a need to provide a method of obtaining superconducting material that is simple, reliable and flexible to implement.
Conventional superconducting microcosmic (BCS) theory is generally used to explain the superconducting phenomenon of conventional superconducting materials, and it is currently known that equation 1 and equation 2 can be obtained according to the BCS theory below.
According to embodiments of the present disclosure, willIf eta > 5, th eta-1 is introduced into the formula 2 to simplify the formula, and then the formula 3 is further obtained.
The meaning of each parameter related to the formula 3 is expressed as follows: n 0 is electron energy density, V is cut-off potential, ε is energy, k B is Boltzmann constant, T c is superconducting transition temperature, T is
Referring to fig. 1, if f (t) = lntsech 2 t, the integration area of f (t) is concentrated within 5, the 0-infinity integration may be approximately equal to the 0-5 integration, and since the 0-infinity integration is known, if η > 5, i.e., equation 3 derived from equation 2, equation 4 holds, resulting in equation 4 below.
Further, by substituting equation 4 into equation 3, the following equation 5 can be obtained.
According to BCS theory, it discloses equation 6.
Further, the following equation 7 is obtained according to the definition T D＝3/2*hwD/kB of debye temperature.
The conversion is performed on equation 7 to obtain equation 8.
In this case, T D is debye temperature (also called debye temperature), and it is known from the above-described derivation that the superconducting transition temperature T C of the superconducting material is in positive correlation with the debye temperature T D, and therefore, in order to raise the superconducting transition temperature of the superconducting material, it is necessary to raise the debye temperature. In addition, there is also a correlation between the electron state density of the superconducting material and the interlayer potential (also called interlayer attraction potential) and its superconducting transition temperature.
Therefore, according to the BCS theory, the embodiment of the disclosure defines that the influence factors of the superconducting transition temperature of the superconducting material comprise the debye temperature, the electron state density and the interlayer potential, and the aim of regulating the superconducting transition temperature of the superconducting material can be achieved by regulating the values of the influence factors.
One aspect of the disclosed embodiments discloses a method for obtaining a superconducting material, the method for obtaining a superconducting material comprising:
and carrying out at least one of structure regulation and element modification on the layered material to obtain the treated layered material.
Acquiring physical property parameters of the treated layered material, and determining whether the physical property parameters of the treated layered material meet at least one of the following threshold conditions: the debye temperature is greater than or equal to the first threshold, the electron state density reaches the second threshold, and the interlayer potential is greater than or equal to the third threshold.
If yes, determining that the superconducting transition temperature of the treated layered material is greater than or equal to the superconducting transition temperature threshold, wherein the treated layered material is the target superconducting material.
"Layered material" according to embodiments of the present disclosure refers to a material having a single-layer or multi-layer structure, which satisfies that atoms are connected by strong covalent bonds or ionic bonds within the same layer, and that layers are connected by van der Waals forces between layers, which are relatively weak.
According to the method for obtaining the superconducting material, provided by the embodiment of the disclosure, the layered material is used as a processing object, and at least one of the structure and the material of the layered material is changed by processing the layered material, so that the purpose of changing the physical parameters of the layered material is achieved, wherein the physical parameters comprise at least one of Debye temperature, electron state density and interlayer potential. The physical property parameters of the treated layered material are obtained and compared with corresponding thresholds, whether the physical property parameters meet at least one threshold condition is determined, if yes, the superconducting transition temperature of the treated layered material is larger than or equal to the superconducting transition temperature threshold, which means that the structural regulation and/or element modification of the layered material are feasible, and the regulation and control of the superconducting transition temperature of the layered material can be realized based on the treatment means, so that the layered material is treated into the superconducting material. Therefore, according to the method for acquiring the superconducting material, provided by the embodiment of the disclosure, the laminar material is regulated and controlled by regulating and controlling the influencing factors of the superconducting transition temperature, so that the superconducting transition temperature of the target superconducting material can be increased as much as possible, a support is provided for designing and acquiring the superconducting material with higher superconducting transition temperature, and the method for acquiring the superconducting material has the advantages of accuracy, high efficiency, convenience, mass design benefit, low cost and the like.
The method of obtaining a superconducting material according to the embodiments of the present disclosure may also be regarded as a method of designing a superconducting material, which provides a design route of a target superconducting material such that the superconducting transition temperature of the target superconducting material is sufficiently increased.
The effects of the above-mentioned physical properties on the superconducting transition temperature of the superconducting material are exemplarily described below:
the debye temperature of a superconducting material is in positive correlation with its superconducting transition temperature, the higher the debye temperature, the higher the superconducting transition temperature. In the embodiment of the disclosure, the value of the first threshold is satisfied, and the debye temperature of the layered material after treatment is required to be greater than or equal to the first threshold, so that when the debye temperature of the layered material after treatment reaches the first threshold, the superconducting transition temperature of the layered material after treatment can correspondingly reach a first target transition temperature, and the first target transition temperature is greater than the superconducting transition temperature of the layered material before treatment. Wherein the layered material before treatment is also called basic layered material, i.e. the control is performed based on this.
The electron state density is functionally related to the superconducting transition temperature of the treated layered material, and as the electron state density increases, the superconducting transition temperature of the treated layered material gradually increases, and when the electron state density increases to a specific value, the effect of the electron state density on the increase in the superconducting transition temperature of the treated layered material reaches a limit, and then as the electron state density increases, the superconducting transition temperature of the treated layered material gradually decreases. That is, there is a preferred value for the electron state density, namely the second threshold value described above. The value of the second threshold is satisfied, and when the density of the electron states reaches the second threshold, the value of the increase in the superconducting transition temperature of the treated layered material relative to the superconducting transition temperature of the layered material before treatment is maximized, in which case the superconducting transition temperature of the treated layered material is defined as the second target transition temperature.
The higher the interlayer potential, the higher the superconducting transition temperature of the treated layered material, and in embodiments of the present disclosure, the layer potential of the treated layered material is required to be greater than or equal to a third threshold. The third threshold value is satisfied, and when the interlayer potential reaches the third threshold value, the superconducting transition temperature of the layered material after treatment can correspondingly reach a third target transition temperature, and the third target transition temperature is greater than the superconducting transition temperature of the layered material before treatment.
The value ranges of the thresholds are determined according to the specific composition of the basic layered material, for example, the first threshold may be greater than or equal to 400K for the layered graphene material.
In embodiments of the present disclosure, the first target transition temperature, the second target transition temperature, and the third target transition temperature may be different, all of which are greater than the superconducting transition temperature of the layered material prior to processing.
In some examples (1), determining whether the treated layered material is the target superconducting material is performed by determining whether a debye temperature of the treated layered material is greater than or equal to a first threshold. If so, the superconducting transition temperature of the treated layered material is the first target transition temperature.
In this example (1), the superconducting transition temperature of the treated layered material, that is, the first target transition temperature, may be greater than or equal to 10K, further, may be greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, or the like.
In some examples (2), determining whether the processed layered material is the target superconducting material is performed by determining whether the processed electron state density reaches a second threshold. If so, the superconducting transition temperature of the treated layered material is increased to the maximum relative to the superconducting transition temperature of the layered material before treatment, i.e. the second target transition temperature.
In this example (2), the superconducting transition temperature of the treated layered material, that is, the range of the second target transition temperature may be greater than or equal to 10K, further, may be greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, or the like.
In some examples (3), determining whether the treated layered material is the target superconducting material is performed by determining whether the interlayer potential of the treated layered material is greater than or equal to a third threshold. If so, the superconducting transition temperature of the treated layered material is the third target transition temperature.
In such example (3), the superconducting transition temperature of the treated layered material, that is, the range of the third target transition temperature may be greater than or equal to 10K, further, may be greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, or the like.
In some examples (4), by determining whether the physical properties of the treated layered material meet two of the following threshold conditions simultaneously: the debye temperature is greater than or equal to a first threshold, the electron state density reaches a second threshold, and the interlayer potential is greater than or equal to a third threshold, to determine whether the processed layered material is a target superconducting material.
In this example (4), the superconducting transition temperature of the treated layered material is defined as a fourth target transition temperature, which may be greater than one or both of the first target transition temperature, the second target transition temperature, and the third target transition temperature, and in this example (4), the superconducting transition temperature of the treated layered material, that is, the range of the fourth target transition temperature, may be greater than or equal to 10K, further, greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, and the like.
For example, if the physical properties of the layered material meet that the debye temperature is greater than or equal to the first threshold and the electron state density reaches the second threshold, then the references to "corresponding two" above refer to the first target transition temperature and the second target transition temperature; if the physical properties of the layered material meet the debye temperature greater than or equal to the first threshold value and the interlayer potential greater than or equal to the third threshold value, then the "corresponding two" references above refer to the first target transition temperature and the third target transition temperature.
In some examples (5), by determining whether the physical properties of the treated layered material simultaneously meet three of the following threshold conditions: the debye temperature is greater than or equal to a first threshold, the electron state density reaches a second threshold, and the interlayer potential is greater than or equal to a third threshold, to determine whether the processed layered material is a target superconducting material.
In this example (5), the superconducting transition temperature of the treated layered material is defined as a fifth target transition temperature. The fifth target transition temperature may be greater than one, any two, or three of the first target transition temperature, the second target transition temperature, and the third target transition temperature, for example, in this example, the superconducting transition temperature of the treated layered material, i.e., the range of the fifth target transition temperature, may be greater than or equal to 10K, further, greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, and the like.
In some implementations, it is first determined whether the physical property parameter of the treated layered material meets a debye temperature greater than or equal to a first threshold, and then it is further determined whether the physical property parameter of the treated layered material meets at least one of the following threshold conditions: the electron state density reaches a second threshold and the interlayer potential is greater than or equal to a third threshold.
On the premise of determining that the debye temperature of the treated layered material meets the requirement, whether the state density and the interlayer potential meet the requirement is further determined, so that whether the treated layered material is a target superconducting material can be rapidly screened, the screening effect is good, and the screening efficiency of the superconducting material is improved.
In some implementations, embodiments of the present disclosure provide for structural regulation of layered materials, including at least one of the following regulation measures:
the method comprises the steps of adjusting and controlling the layer torsion angle of the layered material, adjusting and controlling the number of layers of the layered material and adjusting and controlling the arrangement mode among the layers of the layered material.
The structure of the treated layered material can be changed by changing the torsion angle of the layers, the number of the layers and the arrangement mode among the layers, so that at least one of the Debye temperature, the state density and the interlayer potential of the layered material is changed.
In some examples, modulating the layer twist angle of the layered material includes: one or more reference layers are defined in the layered material. And defining a layer adjacent to the reference layer in the layered material as a regulating layer, and regulating the torsion angle of the regulating layer.
In the embodiment of the invention, the angle of the reference layer is defined as 0 DEG, namely, the reference layer is not twisted, but the torsion angle of the regulating layer adjacent to the reference layer is adjusted, namely, the torsion angle of the regulating layer is relative to the angle of the adjacent reference layer, so that the adjustment of the interlayer torsion angle can be realized, and the adjustment of the debye temperature, the state density and the interlayer potential of the treated layered material is further achieved.
When the number of layers of the layered material is plural, one, two, or more of them may be determined as reference layers. For example, the number of layers of the layered material is three, the middle layer may be defined as a reference layer, and the upper and lower layers as regulation layers.
When the layers of the layered material are the same, any one or more of the layers may be used as a reference layer, and a layer adjacent to the reference layer may be used as a regulation layer.
Wherein the angles of all reference layers are defined as 0 DEG, and the torsion angles of the reference layers can be the same or partially the same or different for different modulation layers.
For example, referring to fig. 2, for a layered material having the same layer material, the layer twist angle adjustment is performed such that the treated layered material includes a plurality of layered units arranged in a layered manner, each of which may include an adjustment layer and a reference layer arranged in a layered manner, such that a plurality of alternating single layered arrangements, that is, adjustment layer-reference layer-adjustment layer- … … -reference layer are arranged alternately in a periodic manner. Fig. 2 illustrates an arrangement of stacked units, BB, with one B layer angularly twisted with respect to the other B layer.
For each laminated unit, the regulating layer is twisted relative to the reference layer, and a torsion angle exists between the regulating layer and the reference layer, namely the laminated unit is considered to have a torsion angle. The interlayer twist angle may be the same or different for different laminated units.
When the layers of the layered materials are different in kind, for example, at least two material layers are included therein, a layer in which one target material is located may be defined as a reference layer, or a layer in which two or more different target materials are located may be defined as a reference layer, and a layer adjacent to the reference layer may be a regulation layer.
For example, for a layered material in which graphene layers and boron nitride layers are alternately arranged, all the graphene layers may be used as reference layers, and all the boron nitride layers may be used as regulation layers.
And for the layered materials with different types of layers, performing layer torsion angle regulation on the layered materials, so that the treated layered materials comprise a plurality of layered units which are sequentially layered, the types of the material layers included in each layered unit are at least two, and each layered unit can comprise a regulating layer and a reference layer which are layered. In each of the laminated units, the number of the regulation layers may be one, two or more, the kinds of the regulation layers may be one, two or more, and the number of the reference layers may be one, two or more, and the kinds of the reference layers may be one, two or more.
For example, using A, B, C, D, etc. to represent the type of material, then for each stacked unit, there may be an arrangement including, but not limited to, the following: ABBA, AABBAA, ABCD, ABBCCD, ACBD, BDCA, etc.
Wherein the arrangement of the laminated unit of fig. 3 is ABBA in which the middle two BB layers are used as reference layers, the upper and lower two a layers are twisted with respect to the BB layers, and the twist angles of the upper and lower two a layers are the same.
Fig. 4 illustrates an arrangement of the laminated unit as AABBAA in which the BB layer is a reference layer, the AA layer is twisted with respect to the BB layer, and the twist angles of the two AA layers are the same, and the twist angles of the two AA layers located above and the two AA layers located below are the same.
In some implementations, the torsion angle of the regulatory layer is regulated, including at least one of the following torsion means:
Twisting the regulating layer by using a probe, twisting the regulating layer by using a thermal annealing process, twisting the regulating layer by using a physical tearing process, and twisting the regulating layer by using a polymer support transfer method.
The probe can twist the regulation layer because the regulation layer slides relative to the reference layer under the local mechanical disturbance applied by the probe, thereby realizing the twisting of the regulation layer.
In some examples, the tuning layer is precisely manipulated to twist using molecular-level probes at a specific temperature based on a scanning tunneling microscope (Scanning Tunneling Microscope, STM). In this way, the control layer can be quickly twisted to a set angle.
The thermal annealing process causes the tuning layer to twist, because, by thermal annealing, the energy distribution of the tuning layer can be influenced to twist, the tuning layer twists after annealing treatment and reaches a steady state, and the atomic layer obtains a twisting angle relative to the initial state in the steady state. The torsion angle can be regulated and controlled under the annealing conditions such as the annealing time length, the annealing temperature and the like.
The physical tearing process causes the control layer to twist, because a single atomic layer can be obtained through physical tearing, and then the single atomic layer is transferred to be combined with other atomic layers, so that the treated layered material with a certain twisting angle can be obtained. For example, a single-layer regulating layer is obtained through a physical tearing process, and then the regulating layer is transferred onto the reference layer at a certain torsion angle, so that torsion of the regulating layer relative to the reference layer can be realized.
In some examples, the physical tearing process includes picking up the regulating layer with a clear tape and then transferring the regulating layer to the reference layer at a twist angle by rubbing the adhesive in reverse.
The polymer support transfer method twists the regulation layer because the transfer and twisting operation of the regulation layer can be completed by spin-coating the polymer on the regulation layer, obtaining a polymer-regulation layer composition, transferring the composition onto the reference layer, twisting the regulation layer at a certain angle with respect to the reference layer, and then dissolving with a solvent to remove the polymer.
In some examples, the polymer may be polymethyl methacrylate (Polymethyl Methacrylate, PMMA), and the corresponding solvent used to dissolve the polymethyl methacrylate may be acetone.
In some examples, the layered material includes one, two, three, or more layered units, each layered unit being sequentially layered, e.g., defining the layered unit as M, the layered material may be M, M-M, M-M … … M, or the like. Each layer of laminated units comprises a plurality of raw material layers, wherein each raw material layer is defined as M1, M2, M3, M4 and the like, and then the raw material layers can be arranged and combined in various ways to obtain different laminated units.
In some implementations, the controlling the number of layers of the layered material according to the embodiments of the present disclosure includes: defining a plurality of material layers of different kinds in the layered material; the number of the at least one material layer is regulated.
Wherein the above-mentioned "different kinds" include but are not limited to: different materials, different functions, etc., for example, the graphene layer and the boron nitride layer belong to two material layers with different materials; for example, the control layer and the reference layer are functionally different layers of two materials.
The purpose of regulating at least one of the debye temperature, the state density and the interlayer potential of the layered material can also be achieved by regulating the number of layers of the material layers of a specific kind in the layered material.
In some examples, the target superconducting material to which embodiments of the present disclosure relate is a few-layer layered material, i.e., the number of material layers contained therein may be 2,3,4, 5, 6,7, 8, 9, 10.
In some examples, the treated layered material includes a plurality of layered units in sequence, with the layered units being layered in a layered arrangement, i.e., in a periodic arrangement. The laminated unit comprises two or more material layers, the number of layers of the material layer corresponding to any one material is regulated and controlled, the number of layers of a specific material layer is 1 layer, 2 layers, 3 layers or more, and then a plurality of material layers are arranged and combined in a plurality of ways.
For example, the lamination unit includes two material layers, one of which is defined as M11 and the other of which is defined as M12, and then the number of layers of M11 may be 1,2, 3 or more, or the number of layers of M12 may be 1,2, 3 or more.
In some implementations, the adjusting and controlling the arrangement manner between layers of the layered material according to the embodiments of the present disclosure includes: defining a plurality of material layers of different kinds in the layered material; the lamination sequence between the different kinds of material layers is regulated and controlled.
The above-mentioned "different types" include, but are not limited to: different materials, different functions, etc., for example, the graphene layer and the boron nitride layer belong to two material layers with different materials; for example, the control layer and the reference layer are functionally different layers of two materials.
The arrangement sequence of the material layers of different materials in the layered material is regulated, so that the purpose of regulating at least one of the debye temperature, the state density and the interlayer potential of the layered material is also achieved.
In some examples, the treated layered material includes a plurality of layered units in sequence, the plurality of layered units being arranged in layers, i.e., in a periodic arrangement. The laminated unit may include two or more material layers, and a plurality of material layers corresponding to a plurality of materials may be arranged and combined in a plurality of ways.
For example, the lamination unit includes two material layers, one of which is defined as M11 and the other of which is defined as M12, and then the number of layers of M11 may be 1, 2, 3 or more, or the number of layers of M12 may be 1, 2, 3 or more. Further, for example, M11 is used as a reference layer and M12 is used as a regulation layer, and the arrangement of the laminated units includes, but is not limited to ：M12-M11、M12-M11-M11、M12-M11-M12、M12-M11-M11-M12、M12-M11-M11-M11-M12、M12-M12-M11-M11-M12-M12、M12-M12-M11-M12-M12、M12-M12-M11-M11-M11-M12-M12 and the like.
When a material layer is designed in multiple layers and is each a control layer, the torsion angle of the control layer of the multiple layer arrangement may be the same relative to the reference layer.
In some implementations, embodiments of the present disclosure relate to elemental modification of layered materials, including at least one of the following modifications:
Element doping is performed between layers of the layered material, element doping is performed within layers of the layered material, and element substitution is performed within layers of the layered material.
The interlayer element doping, the in-layer element doping and the in-layer element replacement can change the physical and chemical properties of the treated layered material, so that at least one of the debye temperature, the state density and the interlayer potential of the layered material is changed.
In some examples, the elemental doping is performed by at least one of the following doping means: ion implantation process, atomic force microscope probe treatment process, atomic layer transfer process.
In the atomic force microscope probe treatment process, a voltage of a specific polarity is applied to the atomic force microscope probe, so that the target layer can be doped with elements of the nanometer and region, for example, hydrogen doping, oxygen doping, nitrogen doping, or the like.
The atomic layer transfer process is suitable for the situation that the element to be doped exists in the form of an atomic layer, and in this case, the atomic layer where the element to be doped is located is directly laminated on the target layer. Among them, the transfer means include but are not limited to: physical tear transfer mode, polymer support transfer mode, and the like.
When the element to be doped is present in the form of a bulk, the doping may be performed using an ion implantation process and an atomic force microscopy probe treatment process.
When the element to be doped is present in the form of an atomic layer, the doping can be performed using an atomic layer transfer process.
In some examples, element substitution is performed by at least one of the following substitution means: ion implantation, STM probe drag substitution, etc.
In some implementations, the layered material may be first structurally conditioned and then element doped or element substituted.
In some implementations, the pre-treated layered material to which embodiments of the present disclosure relate may be a currently known superconducting material. Further, the pre-treatment layered material to which embodiments of the present disclosure relate may be a two-dimensional layered material.
In some examples, pre-treatment layered materials to which embodiments of the present disclosure relate include, but are not limited to, graphene, h-BN (hexagonal boron nitride), moS 2 (molybdenum disulfide), taS 2 (tantalum disulfide), WTe 2 (tungsten ditelluride), mg 2 B (magnesium diboride), cuO (copper oxide), BP (boron phosphide), or FeSe/STO (iron selenide/strontium titanate), and the like.
For graphene, which is a two-dimensional crystal with a honeycomb lattice formed by sp hybridization of carbon atoms, it has some unique properties: the specific surface area of the graphene is very large and can reach 2630m 2/g; the carbon atoms in the graphene are hybridized in an sp2 mode, and each carbon atom forms a stable carbon-carbon bond with three adjacent carbon atoms through sigma bonds, so that the graphene has extremely high mechanical properties, the Young modulus of the graphene can reach 1100GPa, and the tensile strength of the graphene exceeds 100GPa; graphene has excellent conductivity, and has a higher carrier mobility and a lower resistivity. Therefore, graphene has great application potential.
The graphene can effectively realize interlayer regulation and control due to the special layered structure and extremely weak in-layer van der Waals force, and the interlayer design is established on the basis of non-metric contact, namely, the graphene layer is twisted along with the angle, so that moire fringes gradually appear along with the increase of the area of a contact area, and therefore, the graphene material with a stable molar structure is prepared and is made to be superconductive, which is beneficial to preparing the superconductive material with high superconductive transition temperature.
The layered graphene can be prepared in various ways, and the embodiment of the disclosure provides a preparation method of the layered graphene, which comprises the following preparation steps:
Placing graphite powder in a ball mill, mixing the graphite powder with ball milling particles (also called grinding balls with the diameter of 1-50 mm) according to the weight ratio of 1:20-200, setting the rotating speed according to the requirement, then performing ball milling treatment, and guiding and arranging graphite based on the minimum energy in the mechanical grinding process, so that the surface of the grinding balls can obtain a graphene Moire structure.
That is, the layered graphene can be prepared in the above manner, the number of layers may be two, three or more, and the interlayer moire angle (which may be understood as a twist angle) may range from 5 ° to 45 °.
The layered graphene with the desired number of layers and the desired moire angle is obtained by adjusting at least one of parameters of the graphite powder and the grinding ball itself, and ball milling conditions.
Among the parameters of the graphite powder and the grinding balls themselves mentioned above include, but are not limited to: the type of material, particle size of the material, etc., and the type of material includes, for example, expanded graphite, graphite oxide, etc., as the graphite powder. The ball milling conditions referred to above include, but are not limited to: ball milling rotation speed, ball milling temperature, ball milling time length and the like.
In some implementations, the layered material according to the embodiments of the present disclosure includes a plurality of material layers that are stacked, where the material of the plurality of material layers is the same, and the material of the material layers may be graphene, h-BN, moS 2、TaS2、WTe2、Mg2 B, cuO, BP, or FeSe/STO.
For a layered material using the same material, it may be treated by at least one of the following measures: regulating and controlling the layer torsion angle of the layered material, regulating and controlling the number of layers of the layered material, regulating and controlling the arrangement mode of the reference layer and the regulating and controlling layer, doping interlayer elements, doping in layers and replacing elements in layers.
In some implementations, the layered materials contemplated by embodiments of the present disclosure include multiple material layers in a stacked arrangement, the multiple material layers being at least partially different in material; the material layer is selected from at least one of graphene, h-BN and MoS 2、TaS2、WTe2、Mg2 B, cuO, BP, feSe/STO.
For example, one layered material is a sandwich structure comprising graphene layers-h-BN layer-graphene layers arranged in sequence.
For layered materials of different materials, it is possible to treat them by at least one of the following measures: regulating and controlling the layer torsion angle, regulating and controlling the number of layers, regulating and controlling the arrangement mode of a reference layer and a regulating and controlling layer or the arrangement mode of material layers with different materials, doping interlayer elements, doping in layers and replacing elements in layers.
The above description is made on how to perform structure control and/or element modification treatment on the layered material, and in the embodiments of the disclosure, after performing structure control and/or element modification treatment on the layered material, the treated layered material is obtained, and then, physical parameters of the treated layered material, including debye temperature, electronic state density, and interlayer potential, are continuously obtained.
The physical parameters may be obtained by simulation software, for example, first sexual principle calculation software (VASP, MATTER CRAFT, etc.), for example, by solving an intra-lattice atomic wave function and an electron wave function of the processed layered material, and further the physical parameters may be obtained, wherein the solution may be performed according to Hartree Fock approximation, density functional theory, etc.
In the embodiment of the disclosure, the obtained physical property parameters are compared with corresponding preset thresholds, if the threshold conditions are met, the layered material is proved to be feasible to process, and the processed layered material obtained by the processing means can be determined to be the expected target superconducting material.
If the physical property parameters of the treated layered material do not meet the corresponding threshold conditions, the treatment of the layered material is not feasible, the layered material needs to be reprocessed and the treatment means are different from the previous treatment means, or the treated layered material is further treated, and finally, the physical property parameters of the treated layered material meet the threshold conditions, the treatment of the layered material is finished, and the feasible layered material treatment means are determined, so that the target superconducting material is obtained.
In summary, the method for obtaining the superconducting material provided by the embodiment of the disclosure provides a new design route for the superconducting material, and the layered material is used as a base material to perform structural control and/or element doping, so that the superconducting material can be obtained, the superconducting transition temperature of the target superconducting material can be improved, and further the high-temperature superconducting material can be obtained. In addition, the layered material is used as a base material, has the advantages of various raw materials, various combination modes and the like, is favorable for obtaining more types of superconducting materials, and widens the types of the superconducting materials. In addition, the method for obtaining the superconducting material provided by the embodiment of the disclosure has the advantages of low cost and batch preparation, and is beneficial to reducing the manufacturing cost of the superconducting material.
Another aspect of the embodiments of the present disclosure provides a superconducting material obtained by the obtaining method of any one of the above-mentioned superconducting materials.
In some examples, the target superconducting material obtained based on the obtaining method provided by the embodiments of the present disclosure may have a superconducting transition temperature of greater than or equal to 10K, further, greater than or equal to 20K, greater than or equal to 30K, greater than or equal to 40K, greater than or equal to 50K, greater than or equal to 60K, greater than or equal to 70K, greater than or equal to 80K, and the like.
In some examples, the superconducting material provided by embodiments of the present disclosure is a high temperature superconducting material, that is, the superconducting material has a superconducting transition temperature greater than or equal to 77K.
Some implementations of the disclosed embodiments are described in more detail below. While the following describes some specific implementations of the disclosed embodiments, it should be understood that the disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. The specific techniques or conditions are not identified in the examples and are performed according to techniques or conditions described in the literature in this field or according to the product specifications. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Example 1
In this embodiment 1, the layered graphene is treated to obtain a superconducting material, which includes the following steps:
Providing a layered graphene having three layers as a base layered material, comprising: obtained by ball milling graphite powder and grinding balls in a ball mill.
The middle layer of the three-layer graphene is used as a regulating layer, the other two layers are used as reference layers, the layer torsion angle of the regulating layer is regulated, the regulating layer is twisted by utilizing a molecular-level probe and/or is twisted by utilizing a thermal annealing process, and finally the torsion angle of the regulating layer relative to the reference layer reaches 5 degrees, so that the effective regulation and control of the debye temperature of the layered material are realized.
Then, doping B element between the regulating layer and two adjacent reference layers, wherein the doping means can be an ion implantation process or an atomic force microscopy probe treatment process, so as to further regulate the electron state density and the interlayer potential of the layered graphene, and finally obtain a laminated unit. According to the actual requirements, the laminated unit is designed into one or more layers, and the treated laminated material is obtained.
Fig. 5 illustrates an electron state density distribution curve (the abscissa state density in fig. 5 is the electron state density) of the processed three-layer graphene material (i.e. the processed layered material), and fig. 6 illustrates an energy band distribution curve of the processed three-layer graphene material, which can be seen that, based on the processing means for the layered graphene provided in embodiment 1, the processed three-layer graphene material has an obvious regulation and control effect in terms of electron state density and energy band structure relative to the three-layer graphene material before processing.
The simulation software VASP is used to perform simulation calculation on the debye temperature, the electron state density and the interlayer potential of the processed layered material, and compare the simulation calculation with the respective thresholds, so as to determine that the debye temperature is greater than the first threshold, the electron state density reaches the second threshold, the interlayer potential is greater than the third threshold, and further determine that the superconducting transition temperature of the processed layered material is greater than the superconducting transition temperature threshold by 10K, that is, the processing means provided in the embodiment 1 is feasible and can be based on the superconducting material of the layered graphene material.
Example 2
This example 2 treats layered graphene to obtain a superconducting material, which includes the steps of:
And taking a single-layer graphene with the number of layers being a single layer as a basic layered material, dipping h-BN (n-boron nitride) as a regulating layer by using a transparent adhesive tape, transferring the regulating layer onto the graphene serving as a reference layer at a certain torsion angle by using a reverse friction adhesive, and transferring another layer of graphene onto the h-BN layer by adopting the same process to obtain a laminated unit of a graphene-BN-graphene structure. According to the actual requirements, the laminated unit is designed into one or more layers, and the treated laminated material is obtained.
Fig. 7 illustrates an electron state density distribution curve of the treated graphene layered material (the abscissa state density in fig. 7 is the electron state density), and fig. 8 illustrates an energy band distribution curve of the treated graphene layered material, which shows that, based on the treatment means for the layered graphene provided in embodiment 2, the treated graphene layered material has an obvious regulation effect in terms of electron state density and energy band structure relative to the graphene layered material before treatment.
The simulation software VASP is used to perform simulation calculation on the debye temperature, the electron state density and the interlayer potential of the processed layered material, and compare the simulation calculation with the respective thresholds, so as to determine that the debye temperature is greater than the first threshold, the electron state density reaches the second threshold, the interlayer potential is greater than the third threshold, and further determine that the superconducting transition temperature of the processed layered material is greater than the superconducting transition temperature threshold by 10K, that is, the processing means provided in the embodiment 2 is feasible and can be based on the superconducting material of the layered graphene material.
The foregoing is merely for facilitating understanding of the technical solutions of the present disclosure by those skilled in the art, and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (11)
1. A method of obtaining a superconducting material, the method comprising: at least one of structure regulation and element modification is carried out on the layered material, so as to obtain the treated layered material;
Obtaining physical property parameters of the treated layered material, and determining whether the physical property parameters of the treated layered material meet at least one of the following threshold conditions: the debye temperature is greater than or equal to a first threshold, the electron state density reaches a second threshold, and the interlayer potential is greater than or equal to a third threshold;
if yes, determining that the superconducting transition temperature of the treated layered material is greater than or equal to a superconducting transition temperature threshold, wherein the treated layered material is a target superconducting material.
2. The method of claim 1, wherein the structural conditioning of the layered material comprises at least one of the following conditioning measures:
regulating and controlling the layer torsion angle of the layered material, regulating and controlling the number of layers of the layered material and regulating and controlling the arrangement mode among the layers of the layered material.
3. The method for obtaining a superconducting material according to claim 2, wherein the adjusting the layer torsion angle of the layered material includes:
determining one or more reference layers in the layered material;
And defining a layer adjacent to the reference layer in the layered material as a regulating layer, and regulating the torsion angle of the regulating layer.
4. The method of claim 3, wherein said adjusting the torsion angle of the adjusting layer comprises at least one of the following torsion means:
twisting the regulating layer by using a probe, twisting the regulating layer by using a thermal annealing process, twisting the regulating layer by using a physical tearing process, and twisting the regulating layer by using a polymer support transfer method.
5. The method for obtaining a superconducting material according to claim 2, wherein the controlling the number of layers of the layered material includes:
Defining a plurality of material layers of different kinds in the layered material;
The number of the at least one material layer is regulated.
6. The method for obtaining a superconducting material according to claim 2, wherein the adjusting and controlling the arrangement of the layers of the layered material comprises:
Defining a plurality of material layers of different kinds in the layered material;
The lamination sequence between the different kinds of material layers is regulated and controlled.
7. The method of obtaining a superconducting material according to claim 1, wherein the elemental modification of the layered material comprises at least one of the following modifications:
Element doping is performed between layers of the layered material, element doping is performed within layers of the layered material, and element substitution is performed within layers of the layered material.
8. The method of obtaining a superconducting material according to claim 7, wherein the elemental doping is performed by at least one of the following doping means: ion implantation process, atomic force microscope probe treatment process, atomic layer transfer process.
9. The method of obtaining a superconducting material according to any one of claims 1 to 8, wherein the layered material comprises a plurality of material layers arranged in a stacked manner, the plurality of material layers being the same in material;
the material layer is graphene, h-BN, moS 2、TaS2、WTe2、Mg2 B, cuO, BP or FeSe/STO.
10. The method of obtaining a superconducting material according to any one of claims 1 to 8, wherein the layered material comprises a plurality of material layers arranged in a stack, the material of the plurality of material layers being at least partially different;
The material layer is selected from at least one of graphene, h-BN and MoS 2、TaS2、WTe2、Mg2 B, cuO, BP, feSe/STO.
11. A superconducting material, characterized in that it is obtained by the method for obtaining a superconducting material according to any one of claims 1 to 10.
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