CN117979748A

CN117979748A - Display panel, preparation method thereof and display device

Info

Publication number: CN117979748A
Application number: CN202410140085.7A
Authority: CN
Inventors: 周斌; 刘军; 程磊磊; 刘宁; 苏同上
Original assignee: BOE Technology Group Co Ltd; Hefei Xinsheng Optoelectronics Technology Co Ltd; Beijing BOE Technology Development Co Ltd
Current assignee: BOE Technology Group Co Ltd; Hefei Xinsheng Optoelectronics Technology Co Ltd; Beijing BOE Technology Development Co Ltd
Priority date: 2024-01-31
Filing date: 2024-01-31
Publication date: 2024-05-03

Abstract

The embodiment of the disclosure provides a display panel, a preparation method thereof and a display device, relates to the technical field of display, and aims to improve the problem of non-uniform light-emitting brightness of the display panel. The display panel includes: an array substrate; a plurality of light emitting devices positioned at one side of the array substrate; the light emitting device comprises a first electrode, a light emitting functional layer and a second electrode which are sequentially laminated along a direction away from the array substrate; the first electrode comprises a reflecting sub-electrode and a second sub-electrode, and the second sub-electrode covers one side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode. The display panel is used for displaying images.

Description

Display panel, preparation method thereof and display device

Technical Field

The disclosure relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device.

Background

An Organic LIGHT EMITTING Diode (OLED) display panel has the advantages of self-luminescence, low driving voltage, high luminous efficiency, thin thickness, wide viewing angle, high response speed, flexible display and the like, and gradually becomes one of main stream products in the display field, and the OLED display panel can be widely applied to terminal products such as smart phones, tablet computers, televisions, wearable devices (such as watches) and the like. How to avoid the problem of non-uniform light emission of the display panel is a technical problem to be solved in the display panel.

Disclosure of Invention

An embodiment of the disclosure is directed to a display panel, a manufacturing method thereof and a display device, which are used for improving the problem of non-uniform light-emitting brightness of the display panel.

In order to achieve the above object, the embodiments of the present disclosure provide the following technical solutions:

In one aspect, a display panel is provided. The display panel includes an array substrate and a plurality of light emitting devices. The plurality of light emitting devices are positioned on one side of the array substrate; the light emitting device comprises a first electrode, a light emitting functional layer and a second electrode which are sequentially laminated along a direction away from the array substrate; the first electrode comprises a reflecting sub-electrode and a second sub-electrode, and the second sub-electrode covers the side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode.

In the display panel, the light emitting device comprises the first electrode, the light emitting functional layer and the second electrode which are sequentially stacked along the direction far away from the array substrate, wherein the first electrode comprises the reflecting sub-electrode and the second sub-electrode, the second sub-electrode covers one side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode, and the second sub-electrode completely covers one side surface of the reflecting sub-electrode far away from the array substrate, so that the phenomenon that the area corresponding to the edge of the reflecting sub-electrode due to incomplete coverage of the edge of the reflecting sub-electrode by the second sub-electrode cannot emit light is avoided, the edge display defect of the light emitting device is avoided, the area of an effective light emitting area of the light emitting device is improved, the second sub-electrode located on the side wall of the reflecting sub-electrode, the light emitting functional layer located above the second sub-electrode and the second electrode can also form a light emitting area, and the effective light emitting area of the light emitting device is further improved, and the uniformity of the light emitting brightness of the display panel is improved.

In some embodiments, the first electrode further includes a first sub-electrode disposed on a side of the reflective sub-electrode near the array substrate, and the second sub-electrode further covers at least a portion of a sidewall of the first sub-electrode.

In some embodiments, the first sub-electrode includes a first portion and a second portion, the first portion being closer to the array substrate than the second portion, a boundary of the first portion being located outside a boundary of the second portion; the second sub-electrode also covers a sidewall of the second portion.

In some embodiments, the first sub-electrode includes a first portion and a second portion, the first portion being closer to the array substrate than the second portion; the second sub-electrode also covers sidewalls of the first and second portions.

In some embodiments, further comprising: a pixel defining layer provided with a plurality of first openings, and a first electrode of one light emitting device is arranged corresponding to one first opening; the boundary of the first opening is located between the boundary of the reflective sub-electrode and the boundary of the second sub-electrode.

In some embodiments, in the orthographic projection to the array substrate, a distance between a boundary of the reflective sub-electrode and a boundary of the corresponding first opening is 2 μm to 3 μm.

In some embodiments, the display panel includes a plurality of color sub-pixels, each of the sub-pixels including at least one of the light emitting devices, the second sub-electrodes of the light emitting devices of the at least two color sub-pixels having unequal thicknesses.

In some embodiments, the plurality of color sub-pixels includes a green sub-pixel, a blue sub-pixel, and a red sub-pixel; the green sub-pixel includes a first light emitting device, the blue sub-pixel includes a second light emitting device, and the red sub-pixel includes a third light emitting device; in the first light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a first thickness; in the second light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a second thickness; in the third light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a third thickness; the second thickness is greater than the first thickness and the third thickness is greater than the first thickness.

In some embodiments, the second thickness is less than or equal to the third thickness.

In some embodiments, the ratio of the second thickness to the first thickness is 2:1 to 3:1, a step of; the ratio of the third thickness to the first thickness is 2:1 to 3:1.

In some embodiments, the pixel defining layer is further provided with second openings located between adjacent ones of the first openings; the array substrate comprises auxiliary electrodes, and the auxiliary electrodes are positioned between adjacent light emitting devices; the display panel further comprises a conductive cushion block and an isolation part which are arranged in the second opening, wherein the isolation part is positioned at one side of the conductive cushion block far away from the array substrate, and the isolation part and the second sub-electrode are arranged in the same layer; the conductive cushion block is connected with the auxiliary electrode, a space is reserved between the conductive cushion block and the boundary of the second opening, and the edge part of the isolation part extends out compared with the conductive cushion block; the luminous functional layer is disconnected between the conductive cushion block and the boundary of the second opening, and adjacent second electrodes are connected through the conductive cushion block.

In some embodiments, the display panel further includes a first connection sub-electrode and a second connection sub-electrode disposed in the second opening; the first electrode further comprises a first sub-electrode arranged on one side of the reflecting sub-electrode close to the array substrate, the first connecting sub-electrode and the first sub-electrode are arranged on the same layer and positioned between the conductive cushion block and the auxiliary electrode, and the conductive cushion block is connected with the auxiliary electrode through the first connecting sub-electrode; the second connecting sub-electrode and the reflecting sub-electrode are arranged on the same layer and are positioned between the isolation part and the conductive cushion block.

In another aspect, a display device is provided. The display panel according to any one of the embodiments, and a cover plate disposed on a light emitting side of the display panel.

The display device has the same structure and beneficial technical effects as those of the display panel provided in some embodiments described above, and will not be described in detail herein.

In still another aspect, a method for manufacturing a display panel is provided, including: forming an array substrate; forming a plurality of light emitting devices on one side of the array substrate, the light emitting devices including a first electrode, a light emitting function layer, and a second electrode sequentially stacked in a direction away from the array substrate; the first electrode comprises a reflecting sub-electrode and a second sub-electrode, and the second sub-electrode covers the side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode.

The preparation method of the display panel has the same advantages as those of the display panel provided in some embodiments, and is not described herein.

In some embodiments, forming the first electrode of the light emitting device includes: forming a first film, and forming a first mask pattern on the first film, wherein the first mask pattern covers a region of the first film where a reflective sub-electrode is to be formed; etching the first film based on the first mask pattern to form a reflecting sub-electrode; forming a second film on the array substrate on which the reflecting sub-electrode is formed, and forming a second mask pattern on the second film, wherein the second mask pattern covers the area where the first mask pattern is located, and the area of the second mask pattern is larger than that of the first mask pattern; and etching the second film based on the second mask pattern to form a second sub-electrode.

Drawings

In order to more clearly illustrate the technical solutions of the present disclosure, the drawings that need to be used in some embodiments of the present disclosure will be briefly described below, and it is apparent that the drawings in the following description are only drawings of some embodiments of the present disclosure, and other drawings may be obtained according to these drawings to those of ordinary skill in the art. Furthermore, the drawings in the following description may be regarded as schematic diagrams, not limiting the actual size of the products, the actual flow of the methods, the actual timing of the signals, etc. according to the embodiments of the present disclosure.

FIG. 1 is a schematic diagram of a display device provided according to some embodiments;

FIG. 2 is a schematic diagram of one subpixel arrangement in a display panel provided in accordance with some embodiments;

FIG. 3 is a cross-sectional view of a partial structure of the display panel of FIG. 2 along section line AA;

fig. 4 is a block diagram of a light emitting device provided according to some embodiments;

fig. 5 is a top view of a reflective sub-electrode and a second sub-electrode in the light emitting device of fig. 4;

FIG. 6 is a block diagram of a display panel provided according to some embodiments;

fig. 7 is an enlarged view of a light emitting device of a display panel provided according to some embodiments at a dashed circle S in fig. 6;

fig. 8 is a top view of a reflective sub-electrode and a second sub-electrode in the light emitting device of fig. 7;

FIG. 9 is a partial enlarged view of the display panel of FIG. 6;

FIG. 10 is a block diagram of another display panel provided in accordance with some embodiments;

FIG. 11 is a block diagram of another display panel provided in accordance with some embodiments;

FIG. 12 is a block diagram of another display panel provided in accordance with some embodiments;

FIG. 13 is a block diagram of another display panel provided in accordance with some embodiments;

FIG. 14 is a block diagram of a display device provided according to some embodiments;

fig. 15 is a flow chart of a method for manufacturing a display panel according to some embodiments;

fig. 16 to 22 are block diagrams corresponding to steps in a method for manufacturing a first electrode in a display panel according to some embodiments.

Detailed Description

The following description of the embodiments of the present disclosure will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present disclosure. All other embodiments obtained by one of ordinary skill in the art based on the embodiments provided by the present disclosure are within the scope of the present disclosure.

Throughout the specification and claims, the term "comprising" is to be interpreted as an open, inclusive meaning, i.e. "comprising, but not limited to, unless the context requires otherwise. In the description of the present specification, the terms "one embodiment," "some embodiments," "example embodiments," "examples," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The terms "first" and "second" are used below for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the embodiments of the present disclosure, unless otherwise indicated, the meaning of "a plurality" is two or more.

In describing some embodiments, expressions of "coupled" and "connected" and their derivatives may be used. The term "coupled" is to be interpreted broadly, as referring to, for example, a fixed connection, a removable connection, or a combination thereof; can be directly connected or indirectly connected through an intermediate medium. The term "coupled" for example, indicates that two or more elements are in direct physical or electrical contact. The term "coupled" or "communicatively coupled (communicatively coupled)" may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other. The embodiments disclosed herein are not necessarily limited to the disclosure herein.

At least one of "A, B and C" has the same meaning as at least one of "A, B or C" and includes the following combinations of A, B and C: a alone, B alone, C alone, a combination of a and B, a combination of a and C, a combination of B and C, and a combination of A, B and C.

"A and/or B" includes the following three combinations: only a, only B, and combinations of a and B.

The use of "adapted" or "configured to" herein is meant to be an open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

In addition, the use of "based on" is intended to be open and inclusive in that a process, step, calculation, or other action "based on" one or more of the stated conditions or values may be based on additional conditions or beyond the stated values in practice.

As used herein, "about," "approximately" or "approximately" includes the stated values as well as average values within an acceptable deviation range of the particular values as determined by one of ordinary skill in the art in view of the measurement in question and the errors associated with the measurement of the particular quantity (i.e., limitations of the measurement system).

As used herein, "parallel", "perpendicular", "equal" includes the stated case as well as the case that approximates the stated case, the range of which is within an acceptable deviation range as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., limitations of the measurement system). For example, "parallel" includes absolute parallel and approximately parallel, where the acceptable deviation range for approximately parallel may be, for example, a deviation within 5 °; "vertical" includes absolute vertical and near vertical, where the acceptable deviation range for near vertical may also be deviations within 5 °, for example. "equal" includes absolute equal and approximately equal, where the difference between the two, which may be equal, for example, is less than or equal to 5% of either of them within an acceptable deviation of approximately equal.

It will be understood that when a layer or element is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present between the layer or element and the other layer or substrate.

Exemplary embodiments are described herein with reference to cross-sectional and/or plan views as idealized exemplary figures. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Thus, variations from the shape of the drawings due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, the exemplary embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.

Referring to fig. 1, an embodiment of the present disclosure provides a display device 1000, the display device 1000 being a product having an image display function. By way of example, the display 1000 may be any product or component having a display function, such as a television, a notebook, a tablet, a Personal Digital Assistant (PDA), a mobile phone (cell phone), a watch, a clock, a calculator, a GPS receiver/navigator, a camera, a display for a camera view (e.g., a display for a rear view camera in a vehicle), a wearable device, an augmented Reality (Augmented Reality; AR) device, a Virtual Reality (VR) device, or the like. For example, as shown in fig. 1, the display device 1000 may be a mobile phone.

From the Light emission type of the display device 1000, the display device 1000 may be an active Light Emitting display device, such as an OLED (Organic Light-Emitting Diode) display device, a QLED (Quantum Dot LIGHT EMITTING Diodes) display device. In terms of the form of the display device 1000, the display device 1000 may be a flat display device, a curved display device, a foldable display device, or the like. The display device 1000 may be rectangular, circular, or the like in shape as viewed from the display device 1000. The embodiments of the present disclosure are not particularly limited thereto. Some embodiments of the present disclosure will be schematically described below with the display device 1000 as an OLED display device and the display device 1000 as a rectangle as an example, but the embodiments of the present disclosure are not limited thereto, and any other display device may also be considered as long as the same technical ideas apply.

The display device 1000 includes a display panel. In the case where the display device 1000 is an OLED display device, the display panel is an OLED display panel. The structure of the display panel will be described in detail below.

Referring to fig. 2, some embodiments of the present disclosure provide a display panel 1001. The display panel 1001 has a display area Q1 and a peripheral area Q2 adjacent to the display area Q1. The peripheral region Q2 may be disposed one turn around the display region Q1, or the peripheral region Q2 may partially surround the display region Q1. The display area Q1 is an area on the display panel 1001 for displaying an image, and the display area Q1 is provided with a sub-pixel P, where the sub-pixel P includes a light emitting device and a pixel circuit connected to the light emitting device, and the light emitting device can emit light under the driving of the pixel circuit to support the image display. The peripheral region Q2 may be used, for example, to provide a gate driving circuit (GATE DRIVER on Array, abbreviated as GOA) for driving the sub-pixels P to emit light, a control signal line (such as a clock signal line, a power supply voltage signal line, etc.), and the like, and the control signal line is used for providing signals required for the operation of the gate driving circuit.

The display panel 1001 includes a plurality of subpixels arranged in an array, and the plurality of subpixels include three primary color subpixels, for example, a red subpixel, a green subpixel, and a blue subpixel, so that the display panel 1001 can realize display of a color picture. Causing a subpixel to display a particular color can take many forms: illustratively, the light emitting layer in the light emitting device of the sub-pixel is made of a material capable of exciting light of a target color, for example, the light emitting device of the green sub-pixel is made of a light emitting layer material capable of exciting green light, the light emitting device of the blue sub-pixel is made of a light emitting layer material capable of exciting blue light, and the light emitting device of the red sub-pixel is made of a light emitting layer material capable of exciting red light. Also illustratively, the light emitting devices of the plurality of sub-pixels each emit light of a single color, the light of the single color is converted into a target color by disposing a color conversion structure above the light emitting devices, and illustratively, the light emitting devices of the plurality of sub-pixels each emit white light or blue light, the color conversion structure including a green color conversion portion, a blue color conversion portion, a red color conversion portion, and the white light or blue light being converted into light of the corresponding color when passing through the corresponding color conversion portion. The color conversion structure can be a film layer formed by adopting red, green and blue quantum dot materials, or a film layer formed by adopting red, green and blue resistors, or a combination of the two.

Hereinafter, the display panel 1001 is described by taking a WOLED (White Organic Light-Emitting Diode) display panel as an example, but this is not to be construed as a limitation of the technical solution of the present application, and in some other embodiments, the technical solution of the present application may also be applied to a display panel directly using a material capable of exciting a target color light to form a light Emitting device.

In some embodiments, referring to fig. 3, fig. 3 is a cross-sectional view of a partial structure of the display panel 1001 in fig. 2 along the AA direction, the display panel 1001 includes an array substrate 100, a light emitting device 200, a package structure 300, and a quantum dot color conversion structure 400 that are stacked.

Referring to fig. 3, the light emitting device 200 includes a patterned first electrode 201, a light emitting functional layer 202, and a second electrode 203, which are sequentially stacked in a direction away from the array substrate 100.

In this embodiment, the first electrode 201 is configured as an anode of the light emitting device 200, the second electrode 203 is configured as a cathode of the light emitting device 200, and holes from the first electrode 201 and electrons from the second electrode 203 are recombined in the light emitting functional layer 202, thereby exciting light. In other embodiments, the first electrode 201 may be configured as a cathode of the light emitting device 200, and correspondingly, the second electrode 203 is configured as an anode of the light emitting device 200.

The light emitting functional layer 202 includes an organic light emitting layer EML formed of a light emitting material capable of emitting white light in the case where the light emitting device 200 is a WOLED. And in this case, the organic light emitting layers EML of the light emitting devices of the plurality of sub-pixels may be connected in an entire structure.

The light emitting functional layer 202 may further include at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer.

For example, referring to fig. 3, the light emitting functional layer 202 further includes a hole injection layer HIL, and the hole injection layers HIL of the light emitting devices of different sub-pixels are disposed independently of each other.

When the light-emitting functional layer 202 includes a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer, these layers may be in a whole structure, or may be disposed independently of each other.

The display panel 1001 may be a top-emission display panel, that is, light is emitted from the light emitting device 200 in a direction away from the array substrate 100, in which case the first electrode 201 is a total reflection electrode, and referring to fig. 4, the first electrode 201 includes, in a direction close to the light emitting functional layer 202: a first sub-electrode 23, a reflective sub-electrode 21 and a second sub-electrode 22.

The first sub-electrode 23 is configured to be connected to a pixel circuit in the array substrate 100 so as to receive a voltage from the pixel circuit, which drives the light emitting device 200 to emit light. The material of the first sub-electrode 23 comprises indium tin oxide (Indium Tin Oxides, abbreviated to ITO).

The reflective sub-electrode 21 is configured to reflect light of the light emitting device 200 for the purpose of improving light extraction efficiency in the vertical direction, and the material of the reflective sub-electrode 21 includes metal aluminum or aluminum alloy, and may further include other metal materials that reflect light.

The second sub-electrode 22 is configured as a main structure of the first electrode 201 of the light emitting device 200, and plays a main role of providing carriers (holes or electrons) to the light emitting functional layer 202, for example, when the first electrode 201 is an anode, the second sub-electrode 22 is a main body of the anode for providing holes to the light emitting functional layer 202. The material of the second sub-electrode 22 comprises indium tin oxide (Indium Tin Oxides, abbreviated to ITO).

The second electrode 203 is a semi-transparent semi-reflective electrode. In the case where the second electrode 203 is configured as a cathode of the light emitting device 200, a material of the second electrode 203 includes a magnesium-silver alloy or Indium-Zinc-Oxide (IZO for short). The second electrodes 203 of the plurality of light emitting devices 200 may be connected to each other to form an entire surface structure.

The package structure 300 is configured to reduce the risk of moisture and oxygen in the external environment entering the light emitting device 200, thereby improving the service life of the display panel 1001. The package structure 300 may be a package film or a package substrate. For example, referring to fig. 3 and 4, the encapsulation structure 300 may be an encapsulation film, and in this case, the encapsulation structure 300 may include a first inorganic encapsulation layer 301, an organic encapsulation layer 302, and a second inorganic encapsulation layer 303, which are sequentially stacked.

Illustratively, the material of the first inorganic encapsulation layer 301 includes one or more combinations of silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON). The first inorganic encapsulation layer 301 is formed using a chemical vapor deposition (Chemical Vapor Deposition, abbreviated as CVD) process.

Illustratively, the material of the organic encapsulation layer 302 includes one or more of an acrylic-based polymer, a silicon-based polymer, and an epoxy-based polymer (polymer), and is fabricated on the first inorganic encapsulation layer 301 by an Ink Jet Printing (IJP) method, and is subjected to Ultraviolet (UV) curing to form the organic encapsulation layer 302.

Illustratively, the material of the second inorganic encapsulation layer 303 includes one or more combinations of silicon nitride (SiNx), silicon dioxide (SiOx), and silicon oxynitride (SiON). The second inorganic encapsulation layer 303 is formed using a chemical vapor deposition (Chemical Vapor Deposition, abbreviated as CVD) process.

With continued reference to fig. 3, the quantum dot color conversion structure 400 is configured to convert white light emitted from the light emitting device 200 into light of a target color, and the quantum dot color conversion structure 400 includes a red color conversion part 401 provided corresponding to a red sub-pixel, a blue color conversion part 402 provided corresponding to a blue sub-pixel, and a green color conversion part 403 provided corresponding to a green sub-pixel, and white light emitted from the light emitting device 200 is converted into red light, blue light, and green light, respectively, while passing through the red color conversion part 401, the blue color conversion part 402, and the green color conversion part 403.

At present, how to improve the problem of non-uniformity of the light emission luminance of the display panel 1001 is one of the trends of research in the field. Referring to fig. 4 and 5 in combination, the inventors of the present disclosure have found that, when the second sub-electrode 22 and the reflective sub-electrode 21 are formed by using the same mask and one-time etching process, the edge of the finally formed second sub-electrode 22 is shrunk relative to the edge of the reflective sub-electrode 21, and then when the light emitting functional layer 202 is formed, a portion of the material of the light emitting functional layer 202 may be deposited in the area where the reflective sub-electrode 21 protrudes outward relative to the edge of the second sub-electrode 22, as shown in fig. 4, since the bottom of the material of the light emitting functional layer 202 located in the area where the reflective sub-electrode 21 protrudes outward relative to the edge of the second sub-electrode 22 does not have the second sub-electrode 22, the area corresponding to the edge of the reflective sub-electrode 21 cannot emit light, resulting in a small area of the effective light emitting area of the light emitting device 200, and the material of the light emitting functional layer 202 located in the edge area of the reflective sub-electrode 21 is opaque, thereby resulting in poor edge display of the light emitting device 200 and uneven light emitting brightness of the display panel 1001.

To solve the above technical problem, referring to fig. 6 and 7 in combination, in some embodiments, a display panel 1001 is provided, the display panel 1001 includes: an array substrate 100 and a plurality of light emitting devices 200. The plurality of light emitting devices 200 are located at one side of the array substrate 100; the light emitting device 200 includes a first electrode 201, a light emitting functional layer 202, and a second electrode 203 sequentially stacked in a direction away from the array substrate 100; the first electrode 201 includes a reflective sub-electrode 21 and a second sub-electrode 22, and as shown in fig. 6, 7 and 8, the second sub-electrode 22 covers a side surface of the reflective sub-electrode 21 away from the array substrate 100 and a sidewall of the reflective sub-electrode 21.

In the display panel 1001 provided in this embodiment of the present disclosure, the second sub-electrode 22 completely covers the surface of the side of the reflective sub-electrode 21 away from the array substrate 100, so that the problem that the area corresponding to the edge of the reflective sub-electrode cannot emit light due to insufficient coverage of the edge of the reflective sub-electrode 21 by the second sub-electrode 22 is avoided, thus avoiding poor display of the edge of the light emitting device 200 and increasing the area of the effective light emitting area of the light emitting device 200; the second sub-electrode 22 also covers the side wall of the reflective sub-electrode 21, and the second sub-electrode 22 located on the side wall of the reflective sub-electrode 21, the light-emitting functional layer 202 located above the second sub-electrode and the second electrode 203 can also form a light-emitting area, so that the effective light-emitting area of the light-emitting device is further improved, and the uniformity of the light-emitting brightness of the display panel 1001 is improved.

Hereinafter, the embodiment of the present disclosure is described taking the first electrode 201 as the anode of the light emitting device 200 and the second electrode 203 as the cathode of the light emitting device 200 as an example, and for the case where the first electrode 201 is the cathode of the light emitting device 200 and the second electrode 203 is the anode of the light emitting device 200, the above technical ideas of the present disclosure may also be adopted to solve similar technical problems.

The material and function of the second sub-electrode 22 can be found in the above description, and will not be described here again.

In some embodiments, the thickness of the reflector electrode 21 is 100nm to 150nm, such as 100nm, 120nm, 145nm, or 150nm. By making the thickness of the reflective sub-electrode 21 greater than or equal to 100nm, the thickness of the reflective sub-electrode 21 is not too thin to easily transmit light, thereby improving the reflection effect on light. The thickness of the reflective sub-electrode 21 is 150nm or less, which contributes to the light and thin display panel 1001.

The materials and functions of the reflective sub-electrode 21 are described above, and will not be described here.

In some embodiments, the first electrode 201 further includes a first sub-electrode 23 disposed on a side of the reflective sub-electrode 21 near the array substrate 100, and materials and functions of the first sub-electrode 23 may be referred to above, which are not repeated herein. The second sub-electrode 22 also covers at least part of the side wall of the first sub-electrode 23.

Illustratively, the first sub-electrode 23 includes a first portion 231 and a second portion 232, the first portion 231 being closer to the array substrate 100 than the second portion 232. In preparing the first sub-electrode 23, the first portion 231 and the second portion 232 may be formed in steps, and the first portion 231 is configured to perform a function of detecting and repairing defects in a process, such as detecting and repairing the array substrate 100. Otherwise, after the reflective sub-electrode 21 is formed, the reflective sub-electrode 21 shields the first sub-electrode 23, so that the defect of the formed structure cannot be detected and repaired.

The second portion 232 may serve to reduce stress generated during formation of the reflective sub-electrode 21, and to act as a buffer. Specifically, after the first portion 231 is formed, the second portion of material is first used to form a film before the reflective sub-electrode 21 is formed, then a film of reflective sub-electrode material is formed on the film, and then the two films are etched to form the second portion 232 and the reflective sub-electrode 21.

In the above-described embodiment, in order to more clearly describe the structure of the first sub-electrode 23, the first sub-electrode 23 is divided into the first portion 231 and the second portion 232. In some embodiments, the first portion 231 and the second portion 232 of the first sub-electrode 23 may be of unitary construction, and the materials may be the same, in which case there is no physical boundary therebetween.

In some possible designs, as shown in fig. 7, the boundary of the first portion 231 is outside the boundary of the second portion 232. The second sub-electrode 22 also covers the sidewall of the second portion 232. In this way, the second portion 232 of the first sub-electrode 23 and the reflective sub-electrode 21 can be formed by the same mask plate and the one-time etching process, which is beneficial to simplifying the manufacturing steps.

In other possible designs, the second sub-electrode 23 also covers the sidewalls of the first portion 231 and the second portion 232. In this case, the boundary of the first portion 231 may be located outside the boundary of the second portion 232, or as shown in fig. 10, the boundary of the first portion 231 is flush with the boundary of the second portion 232. The boundary of the first portion 231 is flush with the boundary of the second portion 232, so that the same mask plate can be used when forming the first portion 231, the second portion 232 and the reflective sub-electrode 21 of the first sub-electrode 23, and compared with the boundary of the first portion 231 being located outside the boundary of the second portion 232, one mask plate can be saved, thereby achieving the effect of saving cost.

The structure of the array substrate 100 is exemplarily described below. Referring to fig. 6, the array substrate 100 includes a substrate 110 and a pixel circuit layer 120 stacked in order.

The structure of the substrate 110 includes various kinds, and may be specifically selected according to actual needs. The substrate may be a rigid substrate. The rigid substrate may be, for example, a glass substrate or a polymethyl methacrylate (Polymethyl methacrylate, abbreviated to PMMA) substrate. As another example, the substrate may be a flexible substrate. The flexible substrate may be, for example, a polyethylene terephthalate (Polyethylene terephthalate, abbreviated as PET) substrate, a polyethylene naphthalate (Polyethylene naphthalate two formic acid glycol ester, abbreviated as PEN) substrate, a polyimide (Polyimider, abbreviated as PI) substrate, or the like.

The pixel circuit layer 120 includes a plurality of pixel circuits. One pixel circuit is connected to one light emitting device 200 and configured to drive the light emitting device 200 to emit light. The pixel circuit layer 120 may include a plurality of conductive layers configured to form a plurality of pixel circuits and a plurality of signal lines for driving the pixel circuits. The above-described plurality of conductive layers form a plurality of thin film transistors, and referring to fig. 6, only one thin film transistor in the pixel circuit layer 120 is shown in fig. 6, the pixel circuit layer 120 includes: the light emitting device comprises a shielding layer 11 arranged on a substrate 110, a buffer layer 12, an active layer 13, a gate insulating layer 14, a gate electrode 15, an interlayer insulating layer 16, a source-drain conducting layer SD, a passivation layer 17 and a flat layer 18, wherein the buffer layer 12, the active layer 13 and the gate insulating layer 18 are stacked on the shielding layer 11, the active layer 13 comprises a channel region A1 and a conducting region A2 which is respectively arranged on the side of the channel region A1, the conducting region A2 is connected with the source-drain conducting layer SD, the gate insulating layer 14 is arranged on the surface of the channel region A1, which is far away from the substrate 110, the source-drain conducting layer SD comprises a source electrode 102 and a drain electrode 103, a first via k1 is arranged on the passivation layer 17 and the flat layer 18, a first sub-electrode 23 of the light emitting device 200 is connected with the drain electrode 103 through the first via k1, a second via k2 is arranged on the interlayer insulating layer 16, and the source-drain conducting layer SD is connected with the active layer 13 through the second via k 2. The shielding layer 11 can protect the active layer 13, and prevent the performance of the thin film transistor from being reduced due to the fact that light irradiates the active layer 13.

The pixel circuit layer 120 further includes a gate line 19 located on a side of the buffer layer 12 away from the substrate 110, and a gate insulating layer 14 is disposed between the gate line 19 and the buffer layer 12.

In some embodiments, the buffer layer 12 and the interlayer insulating layer 16 are provided with a third via k3, and the drain electrode 103 is connected to the shielding layer 11 through the third via k3, so that the shielding layer 11 forms a storage capacitor with the gate layer where the gate electrode 15 and the gate line 19 are located, or the drain electrode 103 forms a storage capacitor with the gate layer where the gate electrode 15 and the gate line 19 are located.

With continued reference to fig. 6, the array substrate 100 further includes an auxiliary electrode D3, the auxiliary electrode D3 may have a grid structure in the array substrate 100, and the second electrode 203 of the light emitting device 200 may be electrically connected to the auxiliary electrode D3. In the case where the second electrodes 203 of the plurality of light emitting devices 200 are connected to each other to form an overall structure, a voltage drop of the plurality of second electrodes 203 connected to each other to form an overall film layer can be reduced by providing the auxiliary electrode D3.

Illustratively, the auxiliary electrode D3 is positioned between the adjacent light emitting devices 200, so that light emitted from the light emitting devices 200 may be prevented from being blocked.

For example, the auxiliary electrode D3 may be disposed on the same layer as the source electrode 102 and the drain electrode 103, that is, the auxiliary electrode D3 is disposed on the source-drain conductive layer SD, so that the source-drain conductive layer SD and the source electrode 102 and the drain electrode 103 may be formed by the same patterning process, which is advantageous for simplifying the manufacturing steps.

With continued reference to fig. 6, the display panel 1001 further includes: a pixel defining layer PDL provided with a plurality of first openings z1, the first electrode 201 of one light emitting device 200 being disposed corresponding to one first opening z 1; the boundary of the first opening z1 is located between the boundary of the reflective sub-electrode 21 and the boundary of the second sub-electrode 22, i.e., in the region M shown in fig. 7.

For example, referring to fig. 6 and 9 in combination, in the front projection to the array substrate 100, the boundary of the first opening z1 is located between the boundary of the reflective sub-electrode 21 and the boundary of the second sub-electrode 22, and the distance d1 between the boundary of the reflective sub-electrode 21 and the boundary of the corresponding first opening z1 is 2 μm to 3 μm, for example, 2 μm, 2.2 μm, 2.5 μm, 2.8 μm, or 3 μm.

For example, as shown in fig. 11, in the front projection onto the array substrate 100, the boundary of the first opening z1 coincides with the boundary of the second sub-electrode 22. This maximizes the area of the first opening z1, and the light emitting device 200 positioned at the first opening z1 can emit light, thereby advantageously increasing the effective light emitting area of the light emitting device 200.

For example, as shown in fig. 12, in the front projection onto the array substrate 100, the boundary of the first opening z1 coincides with the boundary of the sub-electrode 21. This allows the light emitted from the light emitting device 200 located in the first opening z1 to be reflected by the reflective sub-electrode 21, which is advantageous in improving the uniformity of the brightness of the display panel 1001.

Since the first electrode 201 is a total reflection electrode, the second electrode 203 is a semi-transparent and semi-reflective electrode, light emitted from the light-emitting functional layer 202 is reflected between the first electrode 201 and the second electrode 203 for multiple times, and light which cannot be emitted from the previous part is emitted after changing the emission angle by total reflection. The optical microcavity structure (or resonant cavity) formed by the first electrode 201, the light-emitting functional layer 202 and the second electrode 203 is called a microcavity device, and when the light-emitting area of the light-emitting device is located in a resonant cavity formed by a total reflection film and a semi-reflection film, the wavelength of light with a specific wavelength is selected and enhanced when the wavelength of the light is in the same order of magnitude, and the spectrum is narrowed, which is a microcavity effect. The adoption of the optical microcavity structure can increase the luminous intensity of resonant wavelength, narrow the luminous spectrum and improve the luminous efficiency of the device.

In some embodiments, the display panel 1001 includes sub-pixels of a plurality of colors, each sub-pixel including at least one light emitting device 200, and the second sub-electrodes 203 of the light emitting devices 200 of the sub-pixels of at least two colors are not equal in thickness.

Illustratively, the plurality of color sub-pixels include a green sub-pixel, a blue sub-pixel, and a red sub-pixel. As shown in fig. 13, the green sub-pixel includes a first light emitting device 2001, the blue sub-pixel includes a second light emitting device 2002, and the red sub-pixel includes a third light emitting device 2003; in the first light emitting device 2001, the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 away from the array substrate has a first thickness H1; in the second light emitting device 2002, the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 remote from the array substrate has a second thickness H2; in the third light emitting device 2003, the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 remote from the array substrate has a third thickness H3.

Since the thickness of the second sub-electrode 22 in the first electrode 201 and the thickness of the hole injection layer HIL in the light emitting functional layer 202 have the greatest influence on the light emitting efficiency of the light emitting device 200, the thickness of the hole injection layer HIL needs to be matched with the thickness of the second sub-electrode 22.

Exemplary, in the first light emitting device 2001 belonging to the green sub-pixel, the first thickness H1 of the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 away from the array substrate 100 isFor example/>The thickness of the hole transport layer HIL in the first light-emitting device 2001 is/>For example/>

Exemplary, in the second light-emitting device 2002 belonging to the blue subpixel, the second thickness H2 of the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 away from the array substrate 100 isFor example/>The hole transport layer HIL in the second light emitting device 2002 has a thickness of/>For example/>

Exemplary, in the third light emitting device 2003 belonging to the red subpixel, the third thickness H3 of the second sub-electrode 22 covering the side surface of the reflective sub-electrode 21 away from the array substrate 100 isFor example/>The thickness of the hole transport layer HIL in the third light emitting device 2003 is/>For example/>

In some embodiments, the second thickness H2 is greater than the first thickness H1 and the third thickness H3 is greater than the first thickness H1. So that the length of the second microcavity of the second light emitting device 2002 belonging to the blue sub-pixel is longer than the length of the first microcavity of the first light emitting device 2001 belonging to the green sub-pixel, the length of the third microcavity of the third light emitting device 2003 belonging to the red sub-pixel is longer than the length of the first microcavity of the first light emitting device 2001 belonging to the green sub-pixel, the thicknesses of the second sub-electrodes of the different light emitting devices are limited, so that the cavity length dimension of the resonant cavity of the light emitting device is in the same order as the wavelength of the corresponding light wave, the light of the specific wavelength can be selected and enhanced, the spectrum can be narrowed, and the chromaticity of the display panel 1001 is improved.

For example, the first thickness H1 isSecond thickness H2 is/>A third thickness of/>

In some embodiments, the second thickness H2 is less than or equal to the third thickness H3.

Illustratively, the second thickness H2 is less than the third thickness H3.

For example, the second thickness H2 isThird thickness H3 is/>

Illustratively, the second thickness H2 is equal to the third thickness H3.

For example, the second thickness H2 isThird thickness H3 is/>

In some embodiments, the ratio of the second thickness H2 to the first thickness H1 is 2:1 to 3:1, for example 2: 1. 2.3: 1. 2.5: 1. 2.6: 1. 2.7: 1. 2.8:1 or 3:1.

In some embodiments, the ratio of the third thickness H3 to the first thickness H1 is 2:1 to 3:1, for example 2: 1. 2.3: 1. 2.5: 1. 2.6: 1. 2.7: 1. 2.8:1 or 3:1.

In some embodiments, with continued reference to fig. 6, the pixel defining layer PDL is further provided with second openings z2, the second openings z2 being located between adjacent first openings z 1. In some embodiments, with continued reference to fig. 6, the display panel 1001 further includes a conductive pad D1 disposed in the second opening z2 and a spacer D2, where the spacer D2 is located on a side of the conductive pad D1 away from the array substrate 100, and the spacer D2 and the second sub-electrode 23 are disposed on the same layer, so that the spacer D2 and the second sub-electrode 23 can be formed by the same patterning process, which is beneficial to simplifying the manufacturing steps.

With reference to fig. 6 and 9 in combination, a distance D2 is provided between the boundary between the conductive pad D1 and the second opening z2, and an edge portion of the isolation portion D2 extends out of the conductive pad D1, which is advantageous in that, in the case of forming the light emitting function layer 202 by vapor deposition or printing, the light emitting function layer 202 may be disconnected at a side of the isolation portion D2, that is, the light emitting function layer 202 may be disconnected between the boundary between the conductive pad D1 and the second opening z2, so that light emission of the light emitting function layer 202 located in the second opening z2 may be avoided. And it is ensured that the deposited second electrode 203 can enter under the protruding edge portion of the isolation portion D2 to form a connection with the conductive pad D1, so that the adjacent second electrodes 203 are connected by the conductive pad D1.

On this basis, since the conductive pad D1 is connected to the auxiliary electrode D3, the second electrodes 203 of the plurality of light emitting devices 200 are connected to the auxiliary electrode D3 to reduce the voltage drop of the film layer formed by the connection of the plurality of second electrodes 203.

In some embodiments, with continued reference to fig. 6, the display panel 1001 further includes a first connector sub-electrode D4 and a second connector sub-electrode D5 disposed in the second opening z 2. The first connection sub-electrode D4 and the first sub-electrode 23 are arranged in the same layer and are located between the conductive pad D1 and the auxiliary electrode D3, and the conductive pad D1 is connected with the auxiliary electrode D3 through the first connection sub-electrode D4. Specifically, the passivation layer 17 and the planarization layer 18 are provided with a fourth via k4 penetrating through the passivation layer 17 and the planarization layer 18, and the first connection sub-electrode D4 is connected with the auxiliary electrode D3 through the fourth via k4, so that the adjacent second electrode 203 sequentially passes through the conductive pad D1 and the first connection sub-electrode D4, and is connected with the auxiliary electrode D3.

In addition, the first connection sub-electrode D4 and the first sub-electrode 23 are disposed in the same layer, so that the first connection sub-electrode D4 and the first sub-electrode 23 can be formed by the same patterning process, which is advantageous in simplifying the manufacturing steps.

The second connection sub-electrode D5 is arranged in the same layer as the reflection sub-electrode 21 and is located between the isolation portion D2 and the conductive pad D1. The second connection sub-electrode D5 increases the height of the isolation portion D2, thereby effectively ensuring that the light emitting function layer 202 is disconnected at the edge portion of the isolation portion D2. In addition, the second connection sub-electrode D5 and the reflection sub-electrode 21 are disposed in the same layer, so that the second connection sub-electrode D5 and the reflection sub-electrode 21 can be formed by the same patterning process, which is advantageous in simplifying the manufacturing steps.

In some embodiments, when the display panel 1001 is a WOLED display panel, the display panel 1001 further includes a package structure disposed on the light emitting side of the light emitting devices 200, and a quantum dot color conversion structure disposed on a side of the package structure away from the array substrate.

The specific structure and function of the packaging structure and the quantum dot color conversion structure may refer to the corresponding description above, and will not be repeated here.

Referring to fig. 14, an embodiment of the present disclosure further provides a display device 1000, where the display device 1000 includes a display panel 1001 and a cover plate 1002 disposed on a light emitting side of the display panel 1001.

It should be noted that, the display panel 1001 includes the display panel provided in any of the previous embodiments, and will not be described herein.

Referring to fig. 15 in combination with fig. 6, an embodiment of the present disclosure further provides a method for manufacturing a display panel, including:

step S1: forming an array substrate 100;

Step S2: forming a plurality of light emitting devices 200 on one side of the array substrate 100, the light emitting devices 200 including a first electrode 201, a light emitting function layer 202, and a second electrode 203 sequentially stacked in a direction away from the array substrate 100; the first electrode 201 includes a reflective sub-electrode 21 and a second sub-electrode 22, and the second sub-electrode 22 covers a side surface of the reflective sub-electrode 21 remote from the array substrate 100 and a sidewall of the reflective sub-electrode 21.

The step of forming the first electrode 201 of the light emitting device 200 includes: a first sub-electrode 23, a reflective sub-electrode 21, and a second sub-electrode 22 are sequentially formed at one side of the array substrate 100. Wherein the first sub-electrode 23 comprises a first portion 231 and a second portion 232. Next, a method for manufacturing the first electrode 201 of the light emitting device 200 according to the present embodiment will be specifically described with reference to fig. 16 to 22.

S21: a first portion 231 of the first sub-electrode 23 is formed.

Illustratively, the material of the first portion 231 includes indium tin oxide (Indium Tin Oxides, abbreviated as ITO).

S22: referring to fig. 16 to 18, the second portion 232 of the first sub-electrode 23 and the reflective sub-electrode 21 are formed.

Referring to fig. 16 and 17 in combination, a second partial thin film 2320 and a first thin film 210 are sequentially formed on the array substrate 100 on which the first portion 231 is formed, and a first mask pattern T1 is formed on the first thin film 210, the first mask pattern T1 covering a region of the first thin film 210 where the reflective sub-electrode is to be formed.

The material of the second portion of the film 2320 includes indium tin oxide (Indium Tin Oxides, abbreviated as ITO), the material of the first film 210 includes metal aluminum or an aluminum alloy, and the material of the first film 210 may also include other metal materials that reflect light.

The second portion of the film 2320 may be used to reduce stress generated during the formation of the first film 210, to buffer the formation of the first film 210, so as to avoid the swelling phenomenon caused by the direct formation of the first film 210 on the surface of the flat layer in the array substrate 100.

Illustratively, referring to fig. 16, the step of forming the first mask pattern T1 on the first thin film 210 includes: a first photoresist layer j1 is formed on a surface of the first film 210 far from the array substrate 100, a first mask M1 is formed on a surface of the first photoresist layer j1 far from the array substrate 100, a light-transmitting region is formed in the first mask M1, in the orthographic projection to the array substrate 100, the light-transmitting region in the first mask M1 overlaps with a region of the first film 210 where a sub-electrode is to be formed, and then the first photoresist layer j1 is exposed and developed to form a first mask pattern T1.

Referring to fig. 17 and 18 in combination, the first thin film 210 and the second partial thin film 2320 are etched based on the first mask pattern T1 such that the first thin film 210 forms the reflective sub-electrode 21 and the second partial thin film 2320 forms the second portion 232, and the first portion 231 and the second portion 232 constitute the first sub-electrode 23. The materials of the first portion 231 and the second portion 232 may be the same, and thus the first portion 231 and the second portion 232 may be a unitary structure with no physical limitation therebetween.

S23: referring to fig. 19 to 22 in combination, the second sub-electrode 22 is formed.

Referring to fig. 19, forming a second thin film 220 on the array substrate 100 where the reflective sub-electrode 21 is formed, includes:

The electrode pattern 221 is formed, and the electrode pattern 221 is located in the blue light emitting device region and the red light emitting device region. A sub-film 222 is formed on the array substrate 100 where the electrode pattern 221 is formed, the sub-film 222 covering the green, blue and red light emitting device regions, and the electrode pattern 221 and the sub-film 222 form a second film 220.

Illustratively, the electrode pattern 221 has a thickness ofThe thickness of the sub-film 222 is/>

Referring to fig. 20 and 21 in combination, a second mask pattern T2 is formed on the second thin film 220, the second mask pattern T2 covers an area where the first mask pattern T1 is located, and the area of the second mask pattern T2 is larger than that of the first mask pattern T1, so that the area of the second sub-electrode 22 formed is larger than that of the reflective sub-electrode 21, so that the second sub-electrode 22 can cover a side surface of the reflective sub-electrode 21 away from the array substrate 100 and a sidewall of the reflective sub-electrode 21.

Illustratively, referring to fig. 20, the step of forming the second mask pattern T2 on the second thin film 220 includes: a second photoresist layer j2 is formed on a surface of the second thin film 220 far from the array substrate 100, a second mask M2 is formed on a surface of the second photoresist layer j2 far from the array substrate 100, a light-transmitting region is formed in the second mask M2, in the orthographic projection onto the array substrate 100, the light-transmitting region in the second mask M2 overlaps with a region of the second thin film 220 where the second sub-electrode is to be formed, and then the second photoresist layer j2 is exposed and developed to form a second mask pattern T2.

Referring to fig. 21 and 22 in combination, the second film 220 is etched based on the second mask pattern T2 to form the second sub-electrode 22, and the formed second sub-electrode 22 covers a side surface of the reflective sub-electrode 21 remote from the array substrate 100 and a sidewall of the reflective sub-electrode 21.

Illustratively, the thickness based on the electrode pattern 221 isThe thickness of the sub-film 222 is/>The thickness of the second sub-electrode 22 in the region of the blue light emitting device is therefore/>The second sub-electrode 22 in the red light emitting device region has a thickness/>The second sub-electrode 22 in the green light emitting device area has a thickness/>

The foregoing is merely a specific embodiment of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art who is skilled in the art will recognize that changes or substitutions are within the technical scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A display panel, comprising:

An array substrate;

a plurality of light emitting devices positioned at one side of the array substrate; the light emitting device comprises a first electrode, a light emitting functional layer and a second electrode which are sequentially laminated along a direction away from the array substrate;

the first electrode comprises a reflecting sub-electrode and a second sub-electrode, and the second sub-electrode covers the side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode.

2. The display panel of claim 1, wherein the first electrode further comprises a first sub-electrode disposed on a side of the reflective sub-electrode adjacent to the array substrate, and the second sub-electrode further covers at least a portion of a sidewall of the first sub-electrode.

3. The display panel of claim 2, wherein the first sub-electrode includes a first portion and a second portion, the first portion being closer to the array substrate than the second portion, a boundary of the first portion being located outside a boundary of the second portion;

the second sub-electrode also covers a sidewall of the second portion.

4. The display panel of claim 2, wherein the first sub-electrode includes a first portion and a second portion, the first portion being closer to the array substrate than the second portion;

The second sub-electrode also covers sidewalls of the first and second portions.

5. The display panel of claim 1, further comprising: a pixel defining layer provided with a plurality of first openings, and a first electrode of one light emitting device is arranged corresponding to one first opening;

the boundary of the first opening is located between the boundary of the reflective sub-electrode and the boundary of the second sub-electrode.

6. The display panel according to claim 5, wherein a distance between a boundary of the reflective sub-electrode and a boundary of the corresponding first opening is 2 μm to 3 μm in front projection to the array substrate.

7. The display panel of claim 1, wherein the display panel comprises a plurality of color sub-pixels, each of the sub-pixels comprising at least one of the light emitting devices, the second sub-electrodes of the light emitting devices of the at least two color sub-pixels being of unequal thickness.

8. The display panel of claim 7, wherein the plurality of color sub-pixels includes a green sub-pixel including a first light emitting device, a blue sub-pixel including a second light emitting device, and a red sub-pixel including a third light emitting device;

In the first light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a first thickness; in the second light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a second thickness; in the third light emitting device, a second sub-electrode covering a side surface of the reflective sub-electrode away from the array substrate has a third thickness;

the second thickness is greater than the first thickness and the third thickness is greater than the first thickness.

9. The display panel of claim 8, wherein the second thickness is less than or equal to the third thickness.

10. The display panel of claim 8, wherein a ratio of the second thickness to the first thickness is 2:1 to 3:1, a step of; the ratio of the third thickness to the first thickness is 2:1 to 3:1.

11. The display panel according to claim 5, wherein the pixel defining layer is further provided with second openings, the second openings being located between adjacent ones of the first openings;

the array substrate comprises auxiliary electrodes, and the auxiliary electrodes are positioned between adjacent light emitting devices;

The display panel further comprises a conductive cushion block and an isolation part which are arranged in the second opening, wherein the isolation part is positioned at one side of the conductive cushion block far away from the array substrate, and the isolation part and the second sub-electrode are arranged in the same layer;

The conductive cushion block is connected with the auxiliary electrode, a space is reserved between the conductive cushion block and the boundary of the second opening, and the edge part of the isolation part extends out compared with the conductive cushion block;

the luminous functional layer is disconnected between the conductive cushion block and the boundary of the second opening, and adjacent second electrodes are connected through the conductive cushion block.

12. The display panel of claim 11, further comprising a first connector sub-electrode and a second connector sub-electrode disposed in the second opening;

the first electrode further comprises a first sub-electrode arranged on one side of the reflecting sub-electrode close to the array substrate, the first connecting sub-electrode and the first sub-electrode are arranged on the same layer and positioned between the conductive cushion block and the auxiliary electrode, and the conductive cushion block is connected with the auxiliary electrode through the first connecting sub-electrode;

The second connecting sub-electrode and the reflecting sub-electrode are arranged on the same layer and are positioned between the isolation part and the conductive cushion block.

13. A display device, comprising:

The display panel according to any one of claims 1 to 12; and

And a cover plate arranged on the light-emitting side of the display panel.

14. A method for manufacturing a display panel, comprising:

Forming an array substrate;

Forming a plurality of light emitting devices on one side of the array substrate, the light emitting devices including a first electrode, a light emitting function layer, and a second electrode sequentially stacked in a direction away from the array substrate; the first electrode comprises a reflecting sub-electrode and a second sub-electrode, and the second sub-electrode covers the side surface of the reflecting sub-electrode far away from the array substrate and the side wall of the reflecting sub-electrode.

15. The method of manufacturing a display panel according to claim 14, wherein forming the first electrode of the light emitting device comprises:

Forming a first film, and forming a first mask pattern on the first film, wherein the first mask pattern covers a region of the first film where a reflective sub-electrode is to be formed;

Etching the first film based on the first mask pattern to form a reflecting sub-electrode;

Forming a second film on the array substrate on which the reflecting sub-electrode is formed, and forming a second mask pattern on the second film, wherein the second mask pattern covers the area where the first mask pattern is located, and the area of the second mask pattern is larger than that of the first mask pattern;

And etching the second film based on the second mask pattern to form a second sub-electrode.