CN117979713A - Trans-narrow-band perovskite solar cell and preparation method thereof - Google Patents
Trans-narrow-band perovskite solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN117979713A CN117979713A CN202410132195.9A CN202410132195A CN117979713A CN 117979713 A CN117979713 A CN 117979713A CN 202410132195 A CN202410132195 A CN 202410132195A CN 117979713 A CN117979713 A CN 117979713A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- perovskite
- trans
- layer
- perovskite solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title description 8
- PKBGHORNUFQAAW-UHFFFAOYSA-N 4-chlorobenzohydrazide Chemical compound NNC(=O)C1=CC=C(Cl)C=C1 PKBGHORNUFQAAW-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 18
- 150000005309 metal halides Chemical class 0.000 claims abstract description 18
- 230000005525 hole transport Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000031700 light absorption Effects 0.000 claims abstract description 10
- 230000000903 blocking effect Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical group C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 4
- 239000012046 mixed solvent Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 229910020220 Pb—Sn Inorganic materials 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 239000003638 chemical reducing agent Substances 0.000 abstract description 3
- 239000008139 complexing agent Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JTDNNCYXCFHBGG-UHFFFAOYSA-L tin(ii) iodide Chemical compound I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a trans-narrow-band perovskite solar cell which consists of a transparent conductive substrate, a hole transport layer, an organic-inorganic hybrid metal halide perovskite light absorption layer, an electron transport layer, a hole blocking layer and a metal electrode; wherein the organic-inorganic hybrid metal halide perovskite light absorption layer is Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3, 4-chlorobenzoyl hydrazine is also added, and the addition amount is 0.28-0.54% by mass percent; the addition of the 4-chlorobenzoyl hydrazine can improve the appearance of the film, passivate defects, promote carrier transmission and inhibit the oxidation of Sn 2+ in the Pb-Sn perovskite film, so that the solar cell added with the 4-chlorobenzoyl hydrazine reduces carrier recombination and improves carrier transmission; in addition, the use of 4-chlorobenzoyl hydrazine passivates surface defects by acting as a reducing agent and a surface complexing agent, thereby enhancing the stability of the solar cell.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a perovskite solar cell and a preparation method thereof.
Background
With the continuous advancement of social industrialization, traditional energy sources such as coal and petroleum cannot meet the demands of people for energy. And the excessive use of the traditional non-renewable energy sources can bring various environmental problems such as acid rain, greenhouse effect and the like, and the energy crisis makes people in the world urgent want to find clean renewable energy sources. Solar cells have been developed because solar energy has inexhaustible advantages, and efforts are made to convert solar energy into energy that can be directly utilized.
Solar cells can convert light energy into electrical energy, which has been experienced in the past three generations in continued experimental improvement. The first generation of solar cells is typified by single crystal silicon cells, but in order to produce a high-efficiency device, heating at a high temperature is required to obtain high-purity silicon, which complicates the process and increases the cost. In order to solve this problem, a second-generation multi-compound thin film battery typified by copper indium gallium selenide was produced. However, the raw materials of such batteries are scarce, toxic and expensive. In order to solve the problems of the first generation and the second generation solar cells, the third generation solar cells have been developed, and the low-cost thin film cells represented by Perovskite Solar Cells (PSCs) have the advantages of simple process, abundant materials and the like, develop rapidly in a few years, and the photoelectric conversion efficiency of the PSCs reaches more than 26% at present and is comparable to that of silicon cells (27.6%). The working principle of the perovskite solar cell is that the perovskite material can generate excitons under the irradiation of sunlight, the excitons can be rapidly dissociated into free electrons and holes due to small combination energy of the excitons, the free carriers are separated on an interface, the separated electrons are injected into a conduction band of an electron transport layer, the holes are extracted into corresponding valence bands by the hole transport layer, and the electrons reach the hole transport layer to be combined with the holes after flowing to an external circuit, so that a complete loop is formed.
Because of its excellent material properties, many researchers have been researching organic and inorganic composite perovskite as a next-generation solar cell for over a decade. The tremendous contribution of researchers in different contexts has led to the rapid development of Perovskite Solar Cells (PSC) with certification efficiency increased from 14.1% in 2014 to the nearest 26.1%; notably, such progress was unprecedented in the field of polycrystalline solar cells. In addition, the advantages associated with perovskite band gap tuning properties have enabled the development of tandem solar cells, including silicon/PSC, CIGS/PSC, and all-perovskite. silicon/PSC has recently achieved authentication efficiencies as high as 33.9%. In summary, the development of organic-inorganic hybrid perovskite materials has thoroughly changed the research of solar cells.
Since perovskite is an ionic compound, it has soft lattice properties. The high temperature annealing process of solution process perovskite preparation can lead perovskite crystal lattice to grow rapidly, and because the solution process preparation method and uncontrollable crystallization process can introduce a large number of defects at the bulk phase and interface of the perovskite film, the defects can not only serve as non-radiative recombination centers to reduce efficiency of PSCs devices, but also serve as paths of water oxygen permeation to influence stability of PSCs devices. Therefore, it is important to introduce additives or optimize the preparation method of perovskite thin films to regulate the growth process of crystals so as to obtain high-quality perovskite crystals and thin films.
Since perovskite batteries generally introduce Pb, since the toxicity of Pb may have some influence on the human body and the environment, other components are introduced into the composition to reduce the influence. The Pb content of the Sn-Pb mixed perovskite is 50-60% lower than that of the Pb-based perovskite, and the Pb toxicity problem is partially alleviated. However, various adverse effects are caused by the changes in electrical and chemical properties caused by the incorporation of Sn 2+ into the sn—pb mixed perovskite crystal structure. For example, new problems different from Pb-based perovskite such as poor extinction coefficient performance due to low Pb content, uneven morphology of the thin film due to rapid crystallization kinetics of Sn 2+, high defect concentration, and poor carrier lifetime due to easy oxidation of Sn 2+ to Sn 4+, resulting in a large number of defects in the bulk and interface, have arisen. How to overcome the adverse effect caused by Sn 2+ doped with Sn-Pb mixed perovskite crystal structure is a problem to be solved.
Disclosure of Invention
The invention aims to passivate the defects of a perovskite film by adding 4-chlorobenzoyl hydrazine into a perovskite precursor solution, improve carrier transmission by introducing 4-chlorobenzoyl hydrazine, inhibit Sn 2+ from oxidizing into Sn 4+ and react with lead iodide remained at the top of the perovskite film; the efficiency of the Pb-Sn halide perovskite solar cell modified by the 4-chlorobenzoyl hydrazine is improved from 16.2 percent to 17.7 percent, and the open circuit voltage is obviously improved.
In order to achieve the above purpose, the following technical scheme is adopted:
A trans-narrow-band perovskite solar cell consists of a transparent conductive substrate, a hole transport layer, an organic-inorganic hybrid metal halide perovskite light absorption layer, an electron transport layer, a hole blocking layer and a metal electrode;
wherein the organic-inorganic hybrid metal halide perovskite light-absorbing layer is added with 4-chlorobenzoyl hydrazine, and the addition amount is 0.28-0.54% by mass percent. The optimal protocol was 0.42%.
According to the scheme, the transparent conductive substrate is one of etched ITO conductive glass and etched FTO conductive glass.
According to the scheme, the hole transport layer is PEDOT: PSS.
According to the scheme, the organic-inorganic hybrid metal halide perovskite light absorption layer is Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3, and the thickness is 800-900mm. The optimized scheme is 850nm.
According to the scheme, the electron transport layer is a fullerene derivative, and the thickness is 20-30nm. The optimized scheme is 25nm.
According to the scheme, the hole blocking layer is Bathocuproine (BCP) with the thickness of 6-8nm. The optimized scheme is 7nm.
According to the scheme, the metal electrode is one of Ag, cu and Au, and the thickness is 80-100 nm.
The preparation method of the trans-narrow-band perovskite solar cell comprises the following steps of:
1) Cleaning the transparent conductive substrate; preparing a hole transport layer;
2) Dissolving Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3 perovskite precursor powder and 4-chlorobenzoyl hydrazide powder in a mixed solvent of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and preparing an organic-inorganic hybrid metal halide perovskite light absorption layer by adopting a spin coating method;
3) An electron transport layer, a hole blocking layer, and a metal electrode are sequentially prepared.
Compared with the prior art, the invention has the following beneficial effects:
When 4-chlorobenzoyl hydrazine is added to the perovskite precursor solution, the methyl ammonium head of 4-chlorobenzoyl hydrazine is expected to bind to the surface of the perovskite crystallites, thereby stabilizing the formation of larger particles. These particles deposit at the bottom interface and act as nucleation centers during film growth so that the negatively charged carboxyl groups of the bottom surface face outward from the perovskite toward the hole-collecting layer. As a result, the direction of the dipole creates an electric field that helps drive holes into the hole-collecting layer.
Carrier transmission is improved through the introduction of 4-chlorobenzoyl hydrazine, oxidation of Sn 2+ to Sn 4+ is inhibited, and the Sn 2+ reacts with lead iodide remained at the top of the perovskite film; the efficiency of the Pb-Sn halide perovskite solar cell modified by the 4-chlorobenzoyl hydrazine is improved from 16.2 percent to 17.7 percent, and the open circuit voltage is obviously improved.
The addition of 4-chlorobenzoyl hydrazine can improve the appearance of the film, passivate defects, promote carrier transmission and inhibit the oxidation of Sn 2+ in the Pb-Sn perovskite film, so that the solar cell added with 4-chlorobenzoyl hydrazine reduces carrier recombination and improves carrier transmission. In addition, the use of 4-chlorobenzoyl hydrazine passivates surface defects by acting as a reducing agent and a surface complexing agent, thereby enhancing the stability of the solar cell.
Drawings
Fig. 1: the invention relates to a structural schematic diagram of a trans-narrow-band perovskite solar cell.
Fig. 2: scanning electron microscopes of the perovskite layer obtained in example 2 and comparative example 1, example 2 right and comparative example 1 left.
Fig. 3: J-V curves for examples 1,2, 3 and comparative example 1.
Fig. 4: external quantum efficiency spectra of example 2 and comparative example 1.
Detailed Description
The following examples further illustrate the technical aspects of the present invention, but are not intended to limit the scope of the present invention.
The specific embodiment provides a trans-narrow-band perovskite solar cell, which is shown in the attached figure 1 and consists of a transparent conductive substrate, a hole transport layer, an organic-inorganic hybrid metal halide perovskite light absorption layer, an electron transport layer, a hole blocking layer and a metal electrode;
wherein the organic-inorganic hybrid metal halide perovskite light-absorbing layer is added with 4-chlorobenzoyl hydrazine, and the addition amount is 0.28-0.54% by mass percent. The optimal protocol was 0.42%.
In the invention, 4-chlorobenzoyl hydrazine is added into perovskite precursor solution, and the methyl ammonium head of the 4-chlorobenzoyl hydrazine is combined with the surface of perovskite microcrystal, so that larger particles are formed stably. These particles deposit at the bottom interface and act as nucleation centers during film growth so that the negatively charged carboxyl groups of the bottom surface face outward from the perovskite toward the hole-collecting layer. As a result, the direction of the dipole creates an electric field that helps drive holes into the hole-collecting layer. The film morphology and passivation defect can be improved by adding the 4-chlorobenzoyl hydrazine, carrier transmission is promoted, and oxidation of Sn 2+ in the Pb-Sn perovskite film is inhibited, so that the carrier recombination is reduced and the carrier transmission is improved for the solar cell added with the 4-chlorobenzoyl hydrazine. In addition, the use of 4-chlorobenzoyl hydrazine passivates surface defects by acting as a reducing agent and a surface complexing agent, thereby enhancing the stability of the solar cell.
The specific embodiment also provides a preparation method of the trans-narrow-band perovskite solar cell, which comprises the following steps:
1) Cleaning the transparent conductive substrate; preparing a hole transport layer;
2) Dissolving Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3 perovskite precursor powder and 4-chlorobenzoyl hydrazide powder in a mixed solvent of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and preparing an organic-inorganic hybrid metal halide perovskite light absorption layer by adopting a spin coating method;
3) An electron transport layer, a hole blocking layer, and a metal electrode are sequentially prepared.
Example 1
The size of the ITO etched glass substrate used was 2.5cm. Times.2.5 cm. Ultrasonic cleaning was performed twice in pure water for 15 minutes each time before use, and then blow-dried with an air gun and then treated with UV ozone for 16 minutes.
Spin coating PEDOT on ITO to PSS: the PEDOT PSS hole transport layer solution was filtered through a 0.45 mu mPVDF filter, then the PEDOT PSS hole transport layer was dropped onto a rotating substrate by 100ul, then spin-coated at 4000rpm at 1000rpm/s acceleration for 30s, and then the film was annealed on a hot stage in air at 130℃for 30 minutes.
Transfer to a glove box filled with nitrogen (H 2O、O2 <0.01 ppm), then drop 80ul of perovskite precursor solution onto a rotating substrate, spin coat 10s at 1000rpm, 200rpm/s acceleration, then spin coat 60s at 4000rpm, 1000rpm/s acceleration, respectively, drop 300ul of chlorobenzene at 35 s. The film was then annealed on a hot table in a glove box at 100 ℃ for 20 minutes.
Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3 perovskite precursor solution was prepared by mixing CsI(46.8mg,0.180mmol)、FAI(185.7mg,1.08mmol)、MAI(85.8mg,0.540mmol)、SnI2(335.3mg,0.900mmol)、PbI2(414.9mg,0.900mmol)、SnF2(14.1mg,0.090mmol)、NH4SCN(2.7mg,0.036mmol) and 4-chlorobenzoyl hydrazide 4.6mg to a concentration of 1.8M in a mixed solvent of 0.25 mM DMSO and 0.75 mM DMF. The mass fraction of 4-chlorobenzoyl hydrazine in the obtained organic-inorganic hybrid metal halide perovskite light absorption layer is 0.28%.
The samples were then transferred to a vacuum deposition chamber in a nitrogen filled beam envelope and 25nm of C60 (deposition rate 0.03 nm/s) and 7nm of BCP (deposition rate 0.003 nm/s) were deposited by thermal evaporation. Finally 100nm of silver (Ag) was deposited to prepare the top electrode.
Example 2
Example 1 was repeated with a mass fraction of 4-chlorobenzoyl hydrazide of 0.42% in the organic-inorganic hybrid metal halide perovskite light absorbing layer.
Example 3
Example 1 was repeated with a mass fraction of 4-chlorobenzoyl hydrazide of 0.54% in the organic-inorganic hybrid metal halide perovskite light absorbing layer.
Comparative example 1
Example 1 was repeated without the addition of 4-chlorobenzoyl hydrazide to the organic-inorganic hybrid metal halide perovskite light absorbing layer.
The perovskite layers obtained in example 1 and comparative example 1 were subjected to electron microscopic scanning, as shown in fig. 2, in which the right hand graph of example 2 and the left hand graph of comparative example 1 are shown.
The J-V curves for examples 1, 2, 3 and comparative example 1 are shown in FIG. 3.
The external quantum efficiency spectra of example 2 and comparative example 1 are shown in fig. 4.
Characterization of the open circuit voltage (Voc), short circuit current (Jsc), fill Factor (FF), conversion efficiency (PCEs) for both positive and negative sweeps of examples 1, 2,3 and comparative example 1 are shown in table 1.
TABLE 1
As shown in the above table, the mass fractions of 4-chlorobenzoyl hydrazine added in examples 1,2 and 3 were 0.28%, 0.42% and 0.54%, respectively. PCE increased from 16.2% to 17.7% with a mask measurement of aperture area of 0.058cm 2, with a significant increase in open circuit voltage.
Claims (9)
1. The trans-narrow-band perovskite solar cell is characterized by comprising a transparent conductive substrate, a hole transport layer, an organic-inorganic hybrid metal halide perovskite light absorption layer, an electron transport layer, a hole blocking layer and a metal electrode;
wherein the organic-inorganic hybrid metal halide perovskite light-absorbing layer is added with 4-chlorobenzoyl hydrazine, and the addition amount is 0.28-0.54% by mass percent.
2. The trans-narrowband perovskite solar cell of claim 1, wherein the organic-inorganic hybrid metal halide perovskite light absorbing layer comprises 0.42% by mass of 4-chlorobenzoyl hydrazine.
3. The trans-narrowband perovskite solar cell of claim 1, wherein the transparent conductive substrate is one of etched ITO conductive glass, FTO conductive glass.
4. The trans-narrowband perovskite solar cell of claim 1, wherein said hole transport layer is PEDOT PSS.
5. The trans-narrowband perovskite solar cell of claim 1, wherein said organic-inorganic hybrid metal halide perovskite light absorbing layer is Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3 and has a thickness of 800-900mm.
6. The trans-narrowband perovskite solar cell of claim 1, wherein the electron transport layer is a fullerene derivative having a thickness of 20-30nm.
7. The trans-narrow-band perovskite solar cell of claim 1, wherein said hole blocking layer is bathocuproine and has a thickness of 6-8nm.
8. The trans-narrow-band perovskite solar cell according to claim 1, wherein the metal electrode is one of Ag, cu, au, and has a thickness of 80-100 nm.
9. A method of manufacturing a trans-narrowband perovskite solar cell as claimed in claim 1, comprising the steps of:
1) Cleaning the transparent conductive substrate; preparing a hole transport layer;
2) Dissolving Cs 0.1FA0.6MA0.3Sn0.5Pb0.5I3 perovskite precursor powder and 4-chlorobenzoyl hydrazide powder in a mixed solvent of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), and preparing an organic-inorganic hybrid metal halide perovskite light absorption layer by adopting a spin coating method;
3) An electron transport layer, a hole blocking layer, and a metal electrode are sequentially prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410132195.9A CN117979713A (en) | 2024-01-30 | 2024-01-30 | Trans-narrow-band perovskite solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410132195.9A CN117979713A (en) | 2024-01-30 | 2024-01-30 | Trans-narrow-band perovskite solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117979713A true CN117979713A (en) | 2024-05-03 |
Family
ID=90865559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410132195.9A Pending CN117979713A (en) | 2024-01-30 | 2024-01-30 | Trans-narrow-band perovskite solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117979713A (en) |
-
2024
- 2024-01-30 CN CN202410132195.9A patent/CN117979713A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kondrotas et al. | Sb2S3 solar cells | |
| CN109904318B (en) | Perovskite thin film preparation method based on anti-solution bath and solar cell | |
| CN108598268B (en) | Method for preparing planar heterojunction perovskite solar cell by printing under environmental condition | |
| CN103474575B (en) | A kind of be electron transfer layer hybrid solar cell and the preparation thereof of sulphur zinc oxide | |
| Motoyoshi et al. | Structure and photovoltaic activity of cupric oxide-based thin film solar cells | |
| CN104022225A (en) | High-efficiency low-cost copper indium gallium selenium / perovskite double-junction solar photocell prepared through all-solution method | |
| CN112542549B (en) | Wide-bandgap perovskite solar cell and preparation and application thereof | |
| CN110335945B (en) | Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof | |
| CN108389969B (en) | Green solvent system and mixed solution for preparing perovskite layer of perovskite solar cell | |
| CN110993798A (en) | Perovskite type solar cell based on cooperative post-treatment of multiple ammonium salts and preparation method thereof | |
| CN113903861B (en) | Perovskite solar cell rapidly annealed in air and preparation method thereof | |
| KR101865239B1 (en) | Cigs nanoparticle ink formulation having a high crack-free limit | |
| Wu et al. | Progress in blade-coating method for perovskite solar cells toward commercialization | |
| CN105810831A (en) | Lead-tin hybrid perovskite thin film, and preparation method and application therefor | |
| CN111540835B (en) | Method for improving thermal stability of perovskite solar cell | |
| Ou et al. | Boosting the stability and efficiency of Cs2AgBiBr6 perovskite solar cells via Zn doping | |
| Wang et al. | Advances in perovskite solar cells: film morphology control and interface engineering | |
| CN115241386A (en) | Perovskite solar cell and preparation method thereof | |
| CN113725368B (en) | NH (NH) 4 NO 3 Perovskite solar cell with modified interface | |
| CN111668378B (en) | Perovskite solar cell with V-tin dioxide as electron transport layer and preparation method thereof | |
| CN107134507B (en) | Preparation method of copper indium sulfur selenium film with gradient component solar cell absorption layer | |
| CN111029466B (en) | Perovskite solar cell without carrier transport layer and preparation method thereof | |
| CN114388696B (en) | Light absorption material, preparation method thereof and photovoltaic cell | |
| CN115188899A (en) | Method for preparing perovskite solar cell by one-step printing in high-humidity air | |
| CN117979713A (en) | Trans-narrow-band perovskite solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication |