CN1179626A - Improved surface-mount high power semiconductor package and method of manufacture - Google Patents
Improved surface-mount high power semiconductor package and method of manufacture Download PDFInfo
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- CN1179626A CN1179626A CN97120551A CN97120551A CN1179626A CN 1179626 A CN1179626 A CN 1179626A CN 97120551 A CN97120551 A CN 97120551A CN 97120551 A CN97120551 A CN 97120551A CN 1179626 A CN1179626 A CN 1179626A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A surface mount semiconductor package includes washing grooves disposed on a bottom surface of a plastic housing. The package also employs locking elements for locking the plastic housing to a metal pad on which a semiconductor device is mounted, where the locking elements include a cross bar between terminals, slots disposed on the metal pad which include barbs and dove-tail grooves disposed on the metal pad. The metal pad includes a waffled surface for improved coupling to a substrate. The package includes terminals having offset portions for providing spaces for the plastic housing material to fill for improved encapsulation of the terminals. The metal pad extends beyond the lateral edges of the plastic housing for improved heat dissipation and for providing a surface to couple to a heat sink.
Description
The present invention relates to a kind of capsule and lead frame thereof of semiconductor device, more particularly, relate to a kind of large power semiconductor device that is suitable for surface encapsulation.
The capsule of known large power semiconductor device can carry out surface encapsulation on insulated metal substrate (IMS) or other flat supporting bracket face.At U.S. Patent application serial number No.08/583, a such assembly is disclosed in 219, the applying date is on January 4th, 1996, and denomination of invention is " the semiconductor capsule of surface encapsulation ", and it comprises in this application as a reference.Such capsule is suitable for as the insulated metal substrate structure, carrying out surface encapsulation to the flat supporting bracket of conductive pattern is arranged well.(a kind of thick copper or aluminium substrate that covers thin dielectric membrane, this film have the copper of a thin formation figure or other conduct electricity welding upper surface).
The present invention is to Application No. No.08/583, and a kind of improvement of device shown in 219 makes it more effective and is more convenient for manufacturing.
According to the present invention, it provides a kind of novel lead wire framework, this framework can hold one or more semiconductor chips in the substrate portion of a central flat, as the power MOSFET die, igbt chip, fast rapid regeneration second tube sheet chip, Schottky second tube sheet chip and hybrid chip thereof.This chip is connected with substrate in their bottom surface, is connected with the lead-in wire that is fit at their top.Lead frame has two power supply terminals, and they are positioned at two adjacent corners of a square capsule and can interconnect.Power supply terminal is convenient to be connected with a flat, plastic molded shell, and this housing can seal the top and the side of central lead frame substrate.A plurality of control pins or terminal, originally they be the part of lead frame, but after the housing molding, separate from fin, and stretch out from the side of the housing relative with containing the power supply terminal side.
At least be provided with two control terminal or pins that the interval is close, they can be electrically connected with the grid of housing chips and negative electrode or current direction terminal.One the 3rd far-end (away from the first and second close at interval control terminals) also can be connected with other terminal, for example is connected with the grid of controlled silicon chip, if contain this chip in housing.
Lead frame is a single thin layer conductive plate preferably.Extend the terminal part possibility vertical shift at molded shell edge, so that be that lead frame forms an improved plastic fixtures.The bottom surface of terminal and the substrate of lead frame are at grade.Main fin is provided with parallel groove, and these grooves can pass through the opposite flank of the chip on the substrate, so that form another plastic fixtures to molded shell.Shallow dovetail groove can extend to the one or both ends of substrate from inward flange of these grooves, so also can form improved plastic fixtures.
Substrate surface be have one uneven or the surface of wrinkle (waffled) is arranged, to improve the welding of bottom chip surface electrode and substrate.The bottom surface that can carry out the substrate of surface encapsulation with the conductive pattern of heat release sheet or IMS plate also is wrinkling injustice, improving the welding quality of substrate and fin, thereby avoids the formation of weld seam.
The bottom surface of insulation shell also is provided with complete flushed channel across element width, and parallels with the side that contains the input and output terminal, and between terminal and substrate.These grooves have increased the radial surface distance between terminal and the substrate, and are flushing out welding fluid in the weldering process down.
According to another feature of the present invention, short thin shelf extends from the bottom of flushed channel, across the width of housing bottom, to improve the washing capacity of welding fluid.
As mentioned above, the part of each terminal pin is vertically cut off or is offset to improve the function of plastic fixtures.According to another feature of the present invention, thereby there are not a little square groove or ladder angle to form a sharp edge, so that in patternmaking process, avoid plastics to let out by the bottom surface of terminal at the part circular edge of deviate region.
According to another feature of the present invention, terminal is in the outside near plastic casing, its side adjacent portions is provided with the elongated inclined to one side boss of pressing and rises, these boss rise when a mould capping and can inwardly push, thereby form the seal that the side that can avoid the terminal of molding plastics by stretching out housing lets out, this seals the welding that may influence terminal.
According to another feature of the present invention, a monoblock lead frame bolt bar connects the power input terminal that is positioned at two corners of housing in enclosure interior.The pigtail splice of chip can be made this special bolt bar in the housing, and this bolt bar is included in the housing.This bolt bar can improve the connection of power lug, but also can be used as a plastic fixtures of housing.
Other features and advantages of the present invention will become clearer from the description referring to accompanying drawing.
Fig. 1 is the vertical view of most preferred embodiment capsule of the present invention;
Fig. 2 is the upward view of most preferred embodiment capsule of the present invention;
Fig. 3 is the end view of most preferred embodiment capsule of the present invention;
Fig. 4 is the end view of the power supply terminal of most preferred embodiment capsule of the present invention;
Fig. 5 is mounted in the longitudinal section of the IMS supporting bracket on the capsule among Fig. 1 to 4;
Fig. 6 is the vertical view that is used for the lead frame on Fig. 1 to 4 capsule;
Fig. 7 is the longitudinal section along Fig. 6 center line 7-7;
Fig. 8 is the upward view of lead frame among Fig. 6;
Fig. 9 is the zoomed-in view of circle among Fig. 7 " A ";
Figure 10 is the zoomed-in view of circle among Fig. 3 " B ", demonstrates the locking of control terminal and plastic casing and novel flushed channel structure;
Figure 11 is a part of view of the flat individual layer thin plate of most preferred embodiment of the present invention lead frame, and clamped nipple does not produce skew;
Figure 12 is after clamped nipple produces skew, the view of lead frame among Figure 11;
Figure 13 is that " C " locates the view of the shape at a rank shapes end angle in the angular region among Figure 12, and this shape end angle, rank can be avoided in patternmaking process, and plastics are by the bottom surface seepage of terminal;
Figure 14 is the zoomed-in view of circle among Fig. 6 " D ", shows the plastic latch flushed channel figure that extend the end of the plastic latch slit in the lead frame;
Figure 15 is the cutaway view along Figure 14 center line 15-15;
Figure 16 is the vertical view of a separated leadframe terminals, and it also is presented at the terminal side can vertically be pressed inclined to one side boss edge, these boss edge can sealed molds to avoid plastics to leak out in the solder side that terminal exposes;
Figure 17 is the end view of Figure 16;
Figure 18 demonstrates semiconductor chip and is welded on the substrate, and with lead-in wire the view of the lead frame that chip is connected with external terminal is also demonstrated after the molded shell (not shown) is shaped, and lead frame is put up the view of suitable state;
Figure 19 is the circuit block diagram of Figure 18;
Figure 20 is 20-20 along the line and comprised the longitudinal section of the capsule of " U " type fin among Fig. 1.
At first, referring to Fig. 1 to 4, they are external views of capsule of the surface encapsulation of most preferred embodiment of the present invention, it is made up of a molded ambroin housing 30, this housing is elongated square, the end that comprises a upper surface and an individual layer thin plate lead frame, this lead frame can be use always be approximately the thick copper alloy of 1.27mm.In most preferred embodiment, housing 30 is approximately long to be 29mm, and wide is 14.2mm, and height is 4.27mm.Lead frame is described in detail below Fig. 6,7,8.Leadframe parts comprises lead frame fin 31 in Fig. 1 to 4, be positioned at the power supply terminal 32 and 33 at square casing 30 1 end turnings, and the control terminal or the pin 34,35 and 36 of housing opposite end.Terminal 32 to 36 stretches out the about 1mm of housing side.Terminal 34 and 35 best spacings are nearer, be approximately 2.5mm as the spacing at the two center, and terminal 35 and 36 best spacings are wideer slightly, are approximately 6.0mm as the distance at its two center.
As shown in Figure 3, the bottom of substrate 31 and terminal 32 to 36 are its planes, and they can be connected with the molded surface of fin supporting bracket (as the IMS plate).Fig. 5 is a kind of longitudinal section of IMS plate commonly used, and it is made up of thicker heat conduction (copper or the aluminium alloy) plate 40 that has covered the very thin insulating polymer 41 of one deck.Be provided with a molded thin conductive solder layer 42 on the top of insulating barrier 41.Layer 42 can make into any required shape, still, is divided into one section 42a of portion and several and terminal 32 to 36 in Fig. 5 middle level 42 and is collinear piecemeal.As shown in Figure 5, for example have only piecemeal 42b and 42c to be same straight line with terminal 32 and 34 respectively.Will use under the situation of normal solder technology like this, the welding of the bottom of the capsule among Fig. 1 to 4 and the IMS plate among Fig. 5 is being become very convenient.
Shown in Fig. 1 and 20, when overlooking with side-looking, substrate 31 stretches out housing 30.Specifically, baseplate part 31a and 31b extend laterally from the side of housing 30.This baseplate part 31a that extends laterally and 31b have formed a fin contact-making surface that has increased, thereby can make substrate 31, for example, are used for " U type " fin 31c that whole capsule dispels the heat better and are connected with one.Best-case is that " U type " fin 31c can be welded on baseplate part 31a, the 31b.
Operate downwards in order to assist and to improve scolder, be provided with and run through the welding fluid flushing groove 50 and 51 (Fig. 2 and 3) of its bottom in the bottom of plastic casing 30, these two grooves lay respectively between the opposite side and terminal 32 to 33 and 34 to 36 lines of substrate 31, and parallel with them.Groove 50 and 51 preferably has the cross section of a bending, and its radius is approximately 0.4mm.These grooves are after the downward running of scolder is finished, and to the very helpful effect of flushing welding fluid, they have also increased the radial distance on process plastic casing surface between substrate 31 and the terminal 32 to 36.
In order to improve the function of flushing welding fluid, as shown in figure 10, it is highly effective being provided with narrow and shallow shelf 60 and 61, and shelf 60 and 61 thickness are approximately 0.1mm, and they can guarantee that each flushed channel 50 and 51 separates, and are openings above assembly is welded in substrate.
Before holding chip or housing, lead frame is shown in Fig. 6,7,8.Terminal 34 to 36 is separated with terminal 32,33 and substrate 31 after abundant molding, and substrate 31 and terminal 32 to 36 are parts of lead frame, and are linked together by the piecemeal that separates.Lead frame also is provided with the big horizontal stripe 70 (shown in Fig. 6 to 8 and 18) that power supply terminal 32 is connected with 33, and this horizontal stripe is also fixed so that lead frame and plastic casing 30 are connected to a fixed as plastics.Horizontal stripe 70 also connects joint face as lead-in wire, shown in Figure 18 and 19.
Baseplate part 31 is provided with two parallel elongated slot 71 and 72 (shown in Fig. 6 to 8,14 and 15), and this two groove filled plastics in patternmaking process also form a plastic fixtures simultaneously and fix can make substrate and housing 30.Ad hoc short barb 73 and 74 stretches out from the inboard of slit 71 and 72 respectively, can also form another plastic fixtures so that lead frame substrate 31 and plastic housing are originally interfixed.
In order further to form a plastic fixtures, slit 71 and 72 the end end that extend to substrate of dovetail groove 80 to 83 (shown in Fig. 6,14,15) from the upper surface of substrate 31, these dovetail grooves in patternmaking process filled plastics so that substrate 31 and housing are interfixed.
Should be noted that the upper face center of substrate 31 partly is the surface 85 of " wrinkle " shape injustice.The upper surface of substrate 31 has plated one deck nickel, also is provided with pit (degree of depth preferably is approximately 0.05mm) at interval, and preferably diameter is approximately the round pit that the 0.25mm center is approximately 0.6mm apart.Called optical imaging be: the shape of this wrinkle injustice can improve the welding of chip and drawn grain.Another aspect of most preferred embodiment according to the present invention, wrinkle shape 86 (Fig. 8) also is arranged on another opposite of substrate 31.This surface is normally level and smooth, if but when finding out that this surface is somewhat concave surface, in weldering process down, can avoid the formation of weld seam.By increasing wettability and welding fluid flow between them, the wrinkle shape on spill lead frame basal surface can improve the welding effect of itself and flat fin surface.
Figure 11 is the phantom that is provided with the lead frame of substrate 31 and terminal 36.This framework is originally that a upper and lower surface all is more level and smooth framework.Now learn by the part pressing mold, make leadframe terminals portion produce displacement a little, terminal can fix with plastic casing 30 better as shown in figure 12.For the thick lead frame of 1.27mm, used real offset is approximately 0.5mm.Also learn, in patternmaking process (after migration process), the nose circle that plastics can little by little flow to " C " portion among Figure 12 by lower surface and other skew terminal 32 to 35 of terminal 36.Also as can be known, a square groove 95 (shown in Fig. 9 and 13) that goes out at each terminal turning " C " pressing mold can be avoided the infiltration of the plastics do not expected, groove 95 preferably forms by shearing material (opposite with the bending material), because such method does not need extra lateral space.
According to the another feature of this New Parent, each pin or the terminal that stretch out plastic casing 30 have one or more boss that stretch out from terminal thickness direction (being the side).Boss plays 100,101 thickness should be changed according to the thickness of lead frame.It is 0.05～0.5mm that common boss plays 100,101 thickness.Therefore, shown in Figure 16 and 17, two crushable boss play 100,101, its radius for example is 0.2mm (for the thick lead frame of 1.2mm), be easy to be crushed or the part pressing, play 100,101 limits, boundary that limit thereby can avoid plastics to flow out boss by mould.Shown in Fig. 6 and 7, crushable boss rises all and is arranged on the lead frame.
Figure 18 is the view of the lead frame substrate 31 of two semiconductor chips 110,111 on the same group after being welded to substrate 31.Chip 110,111 on the same group can be an any kind, but in Figure 18 and 19, they are respectively power insulated gate bipolar transistor (IGBT) and fast recovery diode (FRED).
It is pointed out that in Figure 19 the collector plate of IGBT110 is connected with the negative electrode of FRED111,, and be connected by substrate 31 because these electrodes weld mutually with electrically-conductive backing plate 31.Therefore electrically-conductive backing plate 31 is set as one and is used for the parts that are electrically connected with external circuit formation with assembly.The emission of IGBT110 is established with lead-in wire 112 and is connected with the negative electrode of FRED diode 111.Lead 113 continues continuous horizontal stripe 70 and terminal 32,33.
In addition, lead 115 is used to connect grid and the gate terminal 35 of IGBT110, as shown in figure 18, also is provided with an expelling plate Kelvin connecting line 116 on terminal 34.
The front of most preferred embodiment of the present invention is described can show specification and illustrated purpose.Above-mentioned disclosed technical scheme is not to want exhaustive or restriction the present invention.Can make many modifications and variations to the present invention according to above explanation.Can think that protection scope of the present invention is limited by the front detailed description, but is limited by the back claim.
Claims (10)
1, a kind of semiconductor capsule of surface encapsulation, it comprises:
Semiconductor device;
One has encapsulated the metal substrate of semiconductor device;
The housing that one plastic material is made, it can be connected with metal substrate after solidifying, and energy encapsulated semiconductor device, this housing comprises a flushed channel at least, this flushed channel is across housing bottom, and extend the relative side of housing, and flushed channel is provided with shelf along the one edge at least, and shelf thickness is more shallow than flushed channel.
2, the semiconductor capsule of surface encapsulation as claimed in claim 1, it is characterized in that: this capsule also comprises one or more coplanar, with metal substrate away from apart terminal, flushed channel is between metal substrate and terminal.
3, a kind of semiconductor capsule of surface encapsulation, it comprises:
Semiconductor device;
One has encapsulated the metal substrate of semiconductor device;
The housing that one plastic material is made, it can be connected with metal substrate after solidifying, and the energy encapsulated semiconductor device;
One horizontal stripe;
Have first and second terminals at least, the first and second terminal coplines, and mutually remote with metal substrate, first and second terminal space, and link together by horizontal stripe, horizontal stripe locks mutually with metal substrate, solidifies first, second terminal of back and housing forms together at the plastic material of housing.
4, as the semiconductor capsule of the said surface encapsulation of claim 3, it is characterized in that: metal substrate is provided with a groove at least along its avris, and this groove can be filled the plastic material of housing, and after housing solidified, it can make metal substrate and housing fix.
5, the semiconductor capsule of surface encapsulation as claimed in claim 4 is characterized in that: this groove comprises a barb that extends from the groove inwall, and this barb is inserted case material, and metal substrate and housing are interfixed.
6, the semiconductor capsule of surface encapsulation as claimed in claim 3, it is characterized in that this metallic plate is provided with a dovetail groove along at least a portion of one avris at least, this groove can be filled the plastic material of housing, after housing solidifies, metal substrate and housing are interfixed.
7, a kind of semiconductor capsule of surface encapsulation, it comprises:
Semiconductor device;
One has encapsulated the metal substrate of semiconductor device;
The housing that one plastic material is made, it can be connected with metal substrate after solidifying, and the energy encapsulated semiconductor device;
At least one and the metal substrate terminal of long distance mutually, this terminal part and its plane of metal substrate, part skew, this terminal also has along the bottom side of copline portion and is provided with a groove, in order to avoid after housing solidified, the plastic material of housing flowed to the bottom surface of copline portion.
8, a kind of semiconductor capsule of surface encapsulation, it comprises:
Semiconductor device;
One has encapsulated the metal substrate of semiconductor device;
One is connected with metal substrate, and encapsulated the housing of semiconductor device, metallic plate comprises the side extend part that stretches out the housing side, increase the radiating effect of assembly with this, the upper surface that provides a fin and assembly to fix also is provided, and metal substrate comprises that also is used to a basal surface of installing on substrate.
9, the semiconductor capsule of surface encapsulation as claimed in claim 8, it is characterized in that: metal substrate comprises first and second side extend parts, a routine limit of housing is stretched out by the first example portion of stretching, second side extend part stretches out another opposed side edges of housing, and the fin and first and second side extend parts are connected to a fixed.
10, the semiconductor capsule of surface encapsulation as claimed in claim 9 is characterized in that: this fin is " U type " shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97120551A CN1179626A (en) | 1996-09-05 | 1997-09-05 | Improved surface-mount high power semiconductor package and method of manufacture |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US025832 | 1996-09-05 | ||
| CN97120551A CN1179626A (en) | 1996-09-05 | 1997-09-05 | Improved surface-mount high power semiconductor package and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1179626A true CN1179626A (en) | 1998-04-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97120551A Pending CN1179626A (en) | 1996-09-05 | 1997-09-05 | Improved surface-mount high power semiconductor package and method of manufacture |
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| Country | Link |
|---|---|
| CN (1) | CN1179626A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316577C (en) * | 2000-04-04 | 2007-05-16 | 国际整流器公司 | Chip scale surface mounted device and its process of manufacture |
| CN100543952C (en) * | 2005-10-05 | 2009-09-23 | 半导体元件工业有限责任公司 | Making has the method and structure of the molded array package device of the fin that exposes |
| CN102244066A (en) * | 2011-08-05 | 2011-11-16 | 株洲南车时代电气股份有限公司 | Power semiconductor module |
| CN102368485A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Improved semiconductor element lead framework |
| CN102403296A (en) * | 2010-09-13 | 2012-04-04 | 英飞凌科技股份有限公司 | Semiconductor module and method for production thereof |
| CN104576551A (en) * | 2013-10-15 | 2015-04-29 | 英飞凌科技股份有限公司 | Electrically insulating thermal interface on discontinuity of encapsulation structure |
| CN105870095A (en) * | 2015-02-05 | 2016-08-17 | 英飞凌科技奥地利有限公司 | Semiconductor Chip Package Having Contact Pins at Short Side Edges |
| CN109038632A (en) * | 2018-07-11 | 2018-12-18 | 许继集团有限公司 | Converter valve submodule control loop unit, converter valve sub-module assemblies and converter valve |
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1997
- 1997-09-05 CN CN97120551A patent/CN1179626A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316577C (en) * | 2000-04-04 | 2007-05-16 | 国际整流器公司 | Chip scale surface mounted device and its process of manufacture |
| CN100543952C (en) * | 2005-10-05 | 2009-09-23 | 半导体元件工业有限责任公司 | Making has the method and structure of the molded array package device of the fin that exposes |
| CN102403296A (en) * | 2010-09-13 | 2012-04-04 | 英飞凌科技股份有限公司 | Semiconductor module and method for production thereof |
| CN102244066A (en) * | 2011-08-05 | 2011-11-16 | 株洲南车时代电气股份有限公司 | Power semiconductor module |
| CN102368485A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Improved semiconductor element lead framework |
| CN104576551B (en) * | 2013-10-15 | 2019-09-13 | 英飞凌科技股份有限公司 | The hot interface structure of electrical isolation in the interruption of encapsulating structure |
| CN104576551A (en) * | 2013-10-15 | 2015-04-29 | 英飞凌科技股份有限公司 | Electrically insulating thermal interface on discontinuity of encapsulation structure |
| US11049790B2 (en) | 2013-10-15 | 2021-06-29 | Infineon Technologies Ag | Electrically insulating thermal interface on the discontinuity of an encapsulation structure |
| CN105870095A (en) * | 2015-02-05 | 2016-08-17 | 英飞凌科技奥地利有限公司 | Semiconductor Chip Package Having Contact Pins at Short Side Edges |
| CN105870095B (en) * | 2015-02-05 | 2018-10-23 | 英飞凌科技奥地利有限公司 | The semiconductor chip package with contact plug at short edge |
| US10037934B2 (en) | 2015-02-05 | 2018-07-31 | Infineon Technologies Austria Ag | Semiconductor chip package having contact pins at short side edges |
| CN109038632A (en) * | 2018-07-11 | 2018-12-18 | 许继集团有限公司 | Converter valve submodule control loop unit, converter valve sub-module assemblies and converter valve |
| CN109038632B (en) * | 2018-07-11 | 2021-04-20 | 许继集团有限公司 | Converter valve submodule control loop unit, converter valve submodule assembly and converter valve |
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