CN117954338A - Method for establishing detection model and application method - Google Patents
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- CN117954338A CN117954338A CN202211337817.9A CN202211337817A CN117954338A CN 117954338 A CN117954338 A CN 117954338A CN 202211337817 A CN202211337817 A CN 202211337817A CN 117954338 A CN117954338 A CN 117954338A
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- 238000001514 detection method Methods 0.000 title claims abstract description 80
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- 238000012360 testing method Methods 0.000 claims description 21
- 238000007689 inspection Methods 0.000 claims description 5
- 230000001066 destructive effect Effects 0.000 claims description 4
- 238000009864 tensile test Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000010998 test method Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 216
- 238000004458 analytical method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- 238000010008 shearing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
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Abstract
A method for establishing a detection model and an application method thereof, wherein the establishment method comprises the following steps: providing a first wafer comprising a first face and a second face opposite to each other; forming a plurality of first grooves in a first surface of a first wafer; providing a second wafer comprising opposite three sides and a fourth side; bonding a second wafer with the first wafer, wherein a third surface of the second wafer faces to the first surface of the first wafer; obtaining deformation of the sizes of the first grooves in the first direction; acquiring bonding strength between a plurality of first groove corresponding areas and a second wafer; and acquiring a detection model according to the deformation and the bonding strength, wherein the detection model comprises the corresponding relation of the deformation of the first groove, the bonding strength and the position of the first groove. The method improves the detection efficiency of the bonded wafer.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for establishing a detection model and an application method.
Background
With the continuous development of micro-nano technology, people can increase the number of transistors in unit area of a chip by continuously reducing the feature size, so that the performance and the integration level of the chip are greatly improved. However, the current process linewidth scaling becomes more difficult, and three-dimensional electronic packaging would be the best option to further increase the functional integration density of the chip.
Three-dimensional electronic packaging can effectively solve a plurality of troublesome problems in the current semiconductor industry, such as heterogeneous integration, reduced power consumption, size, delay, cost and the like. The three-dimensional electronic package stacks the multi-layer period and the interconnection vertical layer through the high-density vertical through holes, and simultaneously stacks multi-layer chips incompatible in various processes, so that low-cost and low-parasitic effect integration is realized.
After bonding the polycrystalline wafers, a certain bonding strength is needed between the wafers, so that the wafers can be tightly bonded in the subsequent process, and the peeling phenomenon can not occur. For example, after bonding the wafers are typically thinned, typically by a combination of mechanical Grinding (polishing) and mechanical polishing (CMP): the silicon with the most thickness is removed by mechanical grinding, then the silicon with the small thickness is removed by mechanical polishing to improve the surface roughness, improve the total thickness deviation (TTV) and finally reduce to the target thickness. If the bonding strength between the wafers is insufficient, peeling or chipping occurs in the area where the bonding strength is insufficient, and the peeling of the wafers occurs seriously.
The bonding strength of the wafer also reflects the bonding tightness between the wafers, and the difference in bonding tightness between the wafer areas can also affect the process.
The bonding strength and interface stress between wafers need to be known accurately after wafer bonding, so that the bonding process can be monitored better, and further, the electrical property and reliability of the subsequent wafers can be tested to provide more perfect data support.
Disclosure of Invention
The invention solves the technical problem of providing a method for establishing a detection model and an application method thereof so as to accurately obtain bonding strength and interface stress between wafers after bonding of wafers at two sides.
In order to solve the technical problems, the technical scheme of the invention provides a method for establishing a detection model, which comprises the following steps: providing a first wafer, wherein the first wafer comprises a first surface and a second surface which are opposite; forming a plurality of first grooves in a first surface of a first wafer; providing a second wafer comprising opposite three sides and a fourth side; bonding a second wafer with the first wafer, wherein a third surface of the second wafer faces to the first surface of the first wafer; obtaining deformation of the sizes of the first grooves in the first direction; acquiring bonding strength between a plurality of first groove corresponding areas and a second wafer; and acquiring a detection model according to the deformation and the bonding strength, wherein the detection model comprises the corresponding relation of the deformation of the first groove, the bonding strength and the position of the first groove.
Optionally, the distribution of the plurality of first grooves in the first wafer is regular, including: the first wafer comprises a plurality of equally divided areas surrounding the circle center of the wafer, and the number of the first grooves in any area is the same.
Optionally, the distribution shape of the plurality of first grooves in the first wafer is centrosymmetric with respect to the center of the wafer, or the distribution shape of the plurality of first grooves in the first wafer is axisymmetric with respect to the diameter of the wafer, and the plurality of first grooves have a first size in a first direction parallel to the surface of the wafer.
Optionally, the plurality of first grooves are distributed in a cross shape by taking the center of the circle of the first wafer as the center.
Optionally, the plurality of first grooves are distributed in a shape of a Chinese character 'mi' with the center of the circle of the first wafer as the center.
Optionally, the shape of the first groove comprises a regular pattern; the regular pattern includes a circle or a regular polygon, and the number of sides of the regular polygon is greater than or equal to 12.
Optionally, the method for bonding the second wafer to the first wafer includes: applying an acting force to the fourth surface of the second wafer to enable the second wafer to deform and attach; and annealing the first wafer and the second wafer to finish bonding.
Optionally, the deforming and attaching the second wafer includes: and bonding the middle area of the second wafer with the middle area of the first wafer in advance, and sequentially bonding the second wafer with the peripheral area of the first wafer.
Optionally, the bonding strength between the corresponding areas of the first grooves and the second wafer is obtained by a damage detection mode, wherein the damage detection mode comprises a double-arm cantilever test, a tensile test or a shearing test.
Correspondingly, the technical scheme of the invention also provides an application method of the detection model, which comprises the following steps: providing a bonded first wafer and second wafer, the first wafer comprising opposite first and second faces, the first face of the first wafer having a plurality of second grooves therein, the second wafer comprising opposite third and fourth faces, the third face of the second wafer facing the first face of the first wafer; obtaining deformation amounts of the second grooves in the same direction before and after bonding; acquiring the positions of a plurality of second grooves; and acquiring bonding strength between the region corresponding to the second groove in the first wafer and the second wafer according to the detection model, the deformation amount of the second groove and the position of the second groove.
Optionally, the first wafer includes a plurality of equally divided regions around a center of the wafer, the plurality of equally divided regions includes a first region and a second region, and the second groove is located in the first region.
Optionally, the application method of the detection model further includes: acquiring the bonding strength of the area corresponding to the second groove in the first area according to the detection model, the deformation amount of the second groove and the position of the second groove; and acquiring the bonding strength of the second region and the second wafer according to the bonding strength of the detection model and the region corresponding to the second groove in the first region.
Optionally, the shape of the second groove comprises a regular pattern; the regular pattern includes a circle or a regular polygon, and the number of sides of the regular polygon is greater than or equal to 12.
Optionally, according to the detection model, a distribution of the second grooves in the first wafer is obtained.
Optionally, the method further comprises: after the bonding strength is obtained, judging whether the bonding strength meets a preset value; and if the bonding strength does not meet the preset value, the bonded first wafer and second wafer are subjected to bonding release, and the bonding process is adjusted and then bonding is carried out again.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
According to the technical scheme, the method for establishing the detection model and the application method are provided, and the detection model established by the method can meet the requirement of detecting the bonded wafers piece by piece in mass production on one hand, and the bonding process of the mass production wafers is monitored, so that whether the bonding strength of the wafers is enough or not is judged, and whether the bonding is required to be released and the bonding is required to be re-conducted or not is judged. The detection method for detecting by using the detection model is nondestructive detection, so that the rejection rate of the wafer is reduced, and meanwhile, the product yield is improved; on the other hand, by obtaining the bonding strength of the specific position of the wafer, performance analysis can be performed on the device at the specific position according to the bonding strength, and whether the performance of the device is affected by the bonding strength or not is judged, so that the accuracy of the performance analysis of the device is improved.
Further, according to the bonding strength of the detection model and the corresponding area of the second groove in the first area, the bonding strength of the second area is obtained. Therefore, the deformation quantity of a small amount of second grooves can be measured on the first wafer, the bonding strength of the whole first wafer area and the second wafer can be obtained, and the measurement data can be reduced.
Further, according to the detection model, the distribution condition of the second grooves in the first wafer can be guided, and more accurate bonding strength distribution of the first wafer and the second wafer can be obtained.
Drawings
FIG. 1 is a flow chart of a method for establishing a detection model in an embodiment of the invention;
FIGS. 2-4 are schematic diagrams illustrating a wafer bonding process according to an embodiment of the invention;
FIG. 5 is a schematic diagram illustrating a wafer bonding process according to another embodiment of the present invention;
fig. 6 is a flow chart of a method for applying a detection model in an embodiment of the invention.
Detailed Description
As background art, we need to know the bonding strength and interface stress between wafers accurately after wafer bonding, so that the bonding process can be monitored better, and also the subsequent wafer electrical and reliability tests provide more perfect data support.
Specifically, for example, after wafer bonding and thinning, a Through Silicon Via (TSV) is required, which requires a very thick silicon penetration, typically by a Bosch etching process. One of the steps is a Polymer (Polymer) deposition process. The lower the wafer temperature, the stronger the polymer deposition ability; the higher the wafer temperature, the weaker the polymer deposition capability. We need to precisely control the temperature of the wafer. Typically, we will reach the temperature we want by the temperature of the electrostatic Chuck (E-Chuck) where the wafer is in contact with the electrostatic Chuck. However, due to the bonded wafers, the bonding tightness of different wafers is different, which results in different heat conduction efficiency between the wafers. At the same time, the bonding strength of each position of the wafer is different, which also causes the temperature of each region of the same wafer to be different. Therefore, the wafer bonding is required to be relatively tight or the bonding degree of each wafer is consistent, so that the temperature of each region of the electrostatic chuck can be controlled, and the temperature of each region of the wafer is kept consistent, thereby obtaining consistent and controllable process performance.
In addition, bonding also produces a stress on the wafer interface, which produces deformation. There is also a need to accurately understand the bond strength between wafers to evaluate the stress created at the bond interface and thus the impact on the devices within the wafer.
Therefore, we need to know the bonding strength and interface stress between wafers accurately after wafer bonding. The bonding strength of the wafer is detected in two modes of lossy detection and nondestructive detection which are commonly used at present:
1. And (3) detecting damage: (1) For the double-arm cantilever beam (Double Cantilever Beam, DCB) test, we usually insert a blade of a certain thickness between two wafers with force to separate the wafers. After the blade is inserted to a certain depth, the distance extending after the blade is inserted is measured by measuring means such as infrared light. And thus the bonding strength between the wafers is calculated by a formula. And then the bonding strength of the two wafers can be obtained by combining the formula through the internal actual measurement scanning picture. (2) The two wafers are separated by a measuring device of a Pull Test or a shear Test SHEAR TEST, and the bonding strength of the wafers is obtained by the force at the time of separating the two wafers.
However, the double-arm cantilever test can only measure the bonding strength of the edge position of the wafer, and cannot measure the bonding strength inside the bonded wafer; the tensile test or the shearing test can only measure the integral strength of wafer bonding, and can not accurately measure the bonding strength of different positions. At the same time, the two measurement modes are destructive inspection, namely, the wafer is scrapped after the inspection is completed. The effect of building and technology can not be detected by measuring the materials piece by piece in the mass production process.
2. Nondestructive testing: an ultrasonic scanning microscope (C-SAM) is generally used, and the principle is that when an ultrasonic wave propagates in a medium, if substances with different densities or elastic coefficients are encountered, a reflected echo is generated, and the reflected echo is different according to the density of the material, and the ultrasonic scanning microscope detects defects inside the material by using secondary characteristics and converts the defects into images according to the received signal changes, which is generally called a Bubble defect scanning Process (Bubble DEFECT SCAN Process). After bonding is finished, whether the bonding interface has bubble defects or not is checked through scanning the bonding interface, so that the completion degree of the bonding process and whether the wafer can continue to the subsequent process or not are judged.
However, the ultrasonic scanning microscope is only a macroscopic detection mode, and we cannot determine whether peeling or chipping occurs in the subsequent process according to the detected bubble defect.
In order to solve the problems, the technical scheme of the invention provides a method for establishing a detection model and an application method thereof, and the detection model established by the method can meet the requirement of detecting the bonded wafers piece by piece in mass production on one hand, and monitor the bonding process of the mass production wafers so as to judge whether the bonding strength of the wafers is enough or not and whether the bonding is required to be released and re-bonded or not. The detection method of the detection model is nondestructive detection, so that the rejection rate of the wafer is reduced, and meanwhile, the product yield is improved; on the other hand, by obtaining the bonding strength of the specific position of the wafer, performance analysis can be performed on the device at the specific position according to the bonding strength, and whether the performance of the device is affected by the bonding strength or not is judged, so that the accuracy of the performance analysis of the device is improved.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a flow chart of a method for establishing a detection model in an embodiment of the invention.
Referring to fig. 1, the method for establishing the detection model includes:
step S100: providing a first wafer, wherein the first wafer comprises a first surface and a second surface which are opposite;
step S200: forming a plurality of first grooves in a first surface of a first wafer;
Step S300: providing a second wafer comprising opposite three sides and a fourth side;
step S400: bonding a second wafer with the first wafer, wherein a third surface of the second wafer faces to the first surface of the first wafer;
Step S500: obtaining deformation of the sizes of the first grooves in the first direction;
step S600: acquiring bonding strength between a plurality of first groove corresponding areas and a second wafer;
Step S700: and acquiring a detection model according to the deformation and the bonding strength, wherein the detection model comprises the corresponding relation of the deformation of the first groove, the bonding strength and the position of the first groove.
The detection model established by the method can meet the requirement of detecting the bonded wafers piece by piece in mass production on one hand, and monitors the bonding process of the mass production wafers, so that whether the bonding strength of the wafers is enough or not is judged, and whether the bonding is released and the bonding is re-bonded or not is judged. The detection method for detecting by using the detection model is nondestructive detection, so that the rejection rate of the wafer is reduced, and meanwhile, the product yield is improved; on the other hand, by obtaining the bonding strength of the specific position of the wafer, performance analysis can be performed on the device at the specific position according to the bonding strength, and whether the performance of the device is affected by the bonding strength or not is judged, so that the accuracy of the performance analysis of the device is improved.
Next, each step will be described by analysis.
Fig. 2 to 4 are schematic structural views illustrating a wafer bonding process according to an embodiment of the invention.
Referring to fig. 1 in conjunction with fig. 2 and 4, step S100 and step S200 are performed to provide a first wafer 100, where the first wafer 100 includes a first surface S1 and a second surface S2 opposite to each other; a plurality of first grooves 101 are formed in the first surface S1 of the first wafer 100, and the distribution of the plurality of first grooves 101 in the first wafer 100 is regular.
In this embodiment, the distribution of the plurality of first grooves 101 in the first wafer 100 is regular, and the coverage of the detection model obtained subsequently according to the position of the first grooves 101, the first groove shape variable and the bonding strength is wide, and the accuracy is high.
In this embodiment, the distribution of the plurality of first grooves 101 in the first wafer 100 is a regular distribution, including: the first wafer 100 includes a plurality of equally divided regions around the center of the wafer, and the number of the first grooves 101 in any region is the same.
In the present embodiment, the distribution shape of the plurality of first grooves 101 in the first wafer 100 is centered on the center of the wafer, or the distribution shape of the plurality of first grooves 101 in the first wafer 100 is axisymmetric with the diameter of the wafer, and the plurality of first grooves 101 have a first dimension in a first direction parallel to the surface of the wafer.
Referring to fig. 2, in the present embodiment, a plurality of first grooves 101 are distributed in a cross shape with the center of the first wafer as the center.
Referring to fig. 5, in another embodiment, the plurality of first grooves are distributed in a shape of a "m" with the center of the first wafer as the center.
The shape of the first groove 101 includes a regular pattern; the regular pattern includes a circle or a regular polygon, and the number of sides of the regular polygon is greater than or equal to 12.
In the present embodiment, the shape of the first groove 101 includes a circular shape.
The shape of the first groove 101 includes a regular pattern, and stress distribution in the first wafer is uniform before bonding of the regular pattern, so that interference factors can be eliminated, and bonding strength of a corresponding region of the first groove 101 is obtained according to deformation amounts of the same-direction dimensions after bonding.
Referring to fig. 1 in conjunction with fig. 2 and 4, step S300 is performed: providing a second wafer 200, the second wafer 200 comprising opposite three sides S3 and a fourth side S4; step S400 is performed: the second wafer 200 is bonded to the first wafer 100 with the third side S3 of the second wafer 200 facing the first side S1 of the first wafer 100.
The method of bonding the second wafer 200 to the first wafer 100 includes: applying an acting force to the fourth surface S4 of the second wafer 200 to deform and attach the second wafer 200; and annealing the first wafer 100 and the second wafer 200 to finish bonding.
In this embodiment, the method for deforming and attaching the second wafer 200 includes: the middle region of the second wafer 200 is bonded to the middle region of the first wafer 100 in advance, and then the second wafer 200 is bonded to the outer region of the first wafer 100 in sequence.
The second wafer 200 is deformed by applying a force to the fourth surface S4 of the second wafer 200, the intermediate region of the second wafer 200 is bonded to the intermediate region of the first wafer 100 in advance, and then the second wafer 200 is bonded to the peripheral region of the first wafer 100 in sequence. In this way, the second wafer 200 and the first wafer 100 are prevented from being closed in advance, so that bubble defects generated at the interface between the second wafer 200 and the first wafer 100 can be reduced to the maximum extent.
Applying a force to the fourth surface S4 of the second wafer 200 bonds the second wafer 200 to the first wafer 100, and the first recess 101 is located within the first wafer 100 to avoid deforming the first recess 101 under the force when the force is applied to the first wafer 100, thereby affecting the measurement result.
With continued reference to fig. 1, step S500 is performed: after bonding the second wafer 200 to the first wafer 100, the deformation amount of the first grooves 101 in the first direction is obtained.
After the second wafer 200 is bonded to the first wafer 100, the first groove 101 deforms under the action of the stress due to the bonding strength of the second wafer 200 and the first wafer 100 and the stress of the bonding interface, and the deformation of the first grooves 101 in the first direction can be obtained by measuring the sizes of the first grooves 101 in the same first direction before and after bonding.
With continued reference to fig. 1, step S600 is performed: the bonding strength between the corresponding areas of the plurality of first grooves 101 and the second wafer 200 is obtained.
In this embodiment, the bonding strength between the corresponding areas of the plurality of first grooves 101 and the second wafer 200 is obtained by a destructive inspection method.
The damage detection mode comprises a double-arm cantilever beam (Double Cantilever Beam, DCB for short) Test, a tensile Test (Pull Test) or a shear Test (SHEAR TEST).
With continued reference to fig. 1, step S700 is performed: according to the deformation amount of the first grooves 101 in the first direction and the bonding strength corresponding to the first groove 101 area, a detection model is obtained, and the detection model comprises the corresponding relation between the deformation amount of the first grooves 101, the bonding strength and the first groove position.
The obtained detection model can meet the requirement of detecting the bonded wafers piece by piece in mass production, and monitors the bonding process of the mass production wafers so as to judge whether the bonding strength of the wafers is enough or not and whether the bonding is required to be released and re-bonded or not. The subsequent detection method for detecting by using the detection model is nondestructive detection, so that the rejection rate of the wafer is reduced, and meanwhile, the product yield is improved; on the other hand, by obtaining the bonding strength of the specific position of the wafer, performance analysis can be performed on the device at the specific position according to the bonding strength, and whether the performance of the device is affected by the bonding strength or not is judged, so that the accuracy of the performance analysis of the device is improved.
Fig. 6 is a flow chart of a method for applying a detection model in an embodiment of the invention.
Referring to fig. 6, the application method of the detection model includes:
Step S10: providing a detection model, wherein the detection model comprises a first groove variable, a corresponding relation between bonding strength and the position of the first groove;
Step S20: providing a bonded first wafer and a second wafer, wherein the first wafer comprises a first surface and a second surface which are opposite, a plurality of second grooves are formed in the first surface of the first wafer, the second wafer comprises three opposite surfaces and a fourth surface, and the third surface of the second wafer faces the first surface of the first wafer;
Step S30: obtaining deformation amounts of the second grooves in the same direction before and after bonding;
Step S40: acquiring the positions of a plurality of second grooves;
Step S50: and acquiring bonding strength between the area corresponding to the second groove in the first wafer and the second wafer according to the detection model, the deformation amount of the second groove and the position of the second groove.
The detection method of the detection model is nondestructive detection, so that the rejection rate of the wafer is reduced, and meanwhile, the product yield is improved; on the other hand, by obtaining the bonding strength of the specific position of the wafer, performance analysis can be performed on the device at the specific position according to the bonding strength, and whether the performance of the device is affected by the bonding strength or not is judged, so that the accuracy of the performance analysis of the device is improved.
In this embodiment, the first wafer includes a plurality of equally divided regions around the center of the wafer, the plurality of equally divided regions includes a first region and a second region, and the second groove is located in the first region.
In this embodiment, the application method of the detection model further includes: acquiring the bonding strength of a corresponding area of the second groove in the first area according to the detection model, the deformation amount of the second groove and the position of the second groove; and acquiring the bonding strength of the second area and the second wafer according to the bonding strength of the detection model and the corresponding area of the second groove in the first area.
And acquiring the bonding strength of the second area according to the bonding strength of the detection model and the corresponding area of the second groove in the first area. Therefore, the deformation quantity of a small amount of second grooves can be measured on the first wafer, the bonding strength of the whole first wafer area and the second wafer can be obtained, and the measurement data can be reduced.
In this embodiment, the shape of the second groove includes a regular pattern; the regular pattern includes a circle or a regular polygon, and the number of sides of the regular polygon is greater than or equal to 12.
In this embodiment, the application method of the detection model further includes: and acquiring the distribution of the second grooves in the first wafer according to the detection model.
Therefore, the distribution condition of the second grooves in the first wafer can be guided according to the detection model, and more accurate bonding strength distribution of the first wafer and the second wafer can be obtained.
In this embodiment, the application method of the detection model further includes: after the bonding strength is obtained, judging whether the bonding strength meets a preset value; and if the bonding strength does not meet the preset value, the bonded first wafer and second wafer are subjected to bonding release, and the bonding process is adjusted and then bonding is carried out again.
If the bonding strength does not meet the preset value, that is, the bonding strength of a certain area of the first wafer and the second wafer is insufficient, the bonding process parameters can be adjusted, for example, the temperature of each area of the electrostatic chuck is controlled to keep the temperature of each area of the wafer consistent, and the applied force is controlled to enable the first wafer and the second wafer to obtain consistent and controllable process performance after bonding.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (15)
1. The method for establishing the detection model is characterized by comprising the following steps of:
Providing a first wafer comprising opposite first and second faces;
forming a plurality of first grooves in a first surface of a first wafer;
Providing a second wafer comprising opposite three sides and a fourth side;
Bonding the second wafer with the first wafer, wherein the third surface of the second wafer faces the first surface of the first wafer;
obtaining deformation amounts of the sizes of the first grooves in the first direction;
Acquiring bonding strength between a plurality of corresponding areas of the first grooves and the second wafer;
and acquiring a detection model according to the deformation and the bonding strength, wherein the detection model comprises the corresponding relation of the deformation of the first groove, the bonding strength and the position of the first groove.
2. The method for building a test model according to claim 1, wherein the distribution of the plurality of first grooves in the first wafer is a regular distribution, comprising: the first wafer comprises a plurality of equally divided areas surrounding the circle center of the wafer, and the number of the first grooves in any area is the same.
3. The method of claim 2, wherein the distribution shape of the plurality of first grooves in the first wafer is centered on the center of the wafer, or the distribution shape of the plurality of first grooves in the first wafer is axisymmetric with the diameter of the wafer, and the plurality of first grooves have a first dimension in a first direction parallel to the surface of the wafer.
4. The method for building a test model according to claim 3, wherein the plurality of first grooves are distributed in a cross shape with a center of a circle of the first wafer as a center.
5. The method of claim 4, wherein the plurality of first grooves are distributed in a shape of a "meter" with respect to a center of a circle of the first wafer.
6. The method of building a test model of claim 1, wherein the shape of the first groove comprises a regular pattern; the regular pattern includes a circle or a regular polygon having a side length number greater than or equal to 12.
7. The method of building a test model of claim 1, wherein bonding the second wafer to the first wafer comprises: applying an acting force to the fourth surface of the second wafer to enable the second wafer to deform and attach; and annealing the first wafer and the second wafer to finish bonding.
8. The method of creating a test model of claim 7, wherein said deforming and conforming the second wafer comprises: and bonding the middle area of the second wafer with the middle area of the first wafer in advance, and sequentially bonding the second wafer with the peripheral area of the first wafer.
9. The method for building the test model according to claim 1, wherein the bonding strength between the corresponding areas of the plurality of first grooves and the second wafer is obtained by a destructive test method, wherein the destructive test method comprises a double-arm cantilever test, a tensile test or a shear test.
10. A method for applying a detection model, comprising:
providing a detection model, wherein the detection model comprises a first groove shape variable, a corresponding relation of bonding strength and a first groove position;
Providing a bonded first wafer and second wafer, the first wafer comprising opposite first and second faces, the first face of the first wafer having a plurality of second grooves therein, the second wafer comprising opposite third and fourth faces, the third face of the second wafer facing the first face of the first wafer;
Obtaining deformation amounts of the second grooves in the same direction before and after bonding;
acquiring the positions of a plurality of second grooves;
and acquiring bonding strength between the region corresponding to the second groove in the first wafer and the second wafer according to the detection model, the deformation amount of the second groove and the position of the second groove.
11. The method of claim 10, wherein the first wafer includes a plurality of equally divided regions around a center of the wafer, the plurality of equally divided regions including a first region and a second region, and the second recess is located in the first region.
12. The method for applying a detection model according to claim 11, wherein the method for applying a detection model further comprises: acquiring the bonding strength of the area corresponding to the second groove in the first area according to the detection model, the deformation amount of the second groove and the position of the second groove; and acquiring the bonding strength of the second region and the second wafer according to the bonding strength of the detection model and the region corresponding to the second groove in the first region.
13. The method of applying the inspection model of claim 10, wherein the shape of the second groove comprises a regular pattern; the regular pattern includes a circle or a regular polygon having a side length number greater than or equal to 12.
14. The method of claim 10, wherein the distribution of the second grooves in the first wafer is obtained based on the inspection model.
15. The method for applying a detection model according to claim 10, further comprising: after the bonding strength is obtained, judging whether the bonding strength meets a preset value; and if the bonding strength does not meet the preset value, the bonded first wafer and second wafer are subjected to bonding release, and the bonding process is adjusted and then bonding is carried out again.
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