CN117938136A - Radio frequency switch, control method thereof and electronic equipment - Google Patents
Radio frequency switch, control method thereof and electronic equipment Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
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Abstract
The invention discloses a radio frequency switch, a control method thereof and electronic equipment, wherein the radio frequency switch comprises a radio frequency signal input end and a radio frequency signal output end, the radio frequency signal input end is connected with a first power supply through a radio frequency isolation device, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively connected to a grounding end or a second power supply in a switchable manner through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the power capacity and isolation of the radio frequency switch can be obviously improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of communication, in particular to a radio frequency switch, a control method thereof and electronic equipment.
Background
Currently, the radio frequency switches used in the market are mainly divided into two types: a mechanical switch and an electronic switch. The switching time of the mechanical switch is basically in the hundred milliseconds, and it is difficult to meet the switching of the time slot microsecond level of the TDD (Time Division Duplexing, time division duplex) of the RRU (Remote Radio Unit ) device. The switching time of the electronic switch is basically 1-2 microseconds, but is limited by the junction temperature (175 ℃) of the PIN tube, the power capacity is difficult to achieve very high, the power class basically achieved in the industry is 40-60W, and the conventional technical means are difficult to break through, so that the radio frequency switch used by the TDD power amplifier has the problems of limited power capacity and insufficient isolation.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a radio frequency switch, electronic equipment, a control method and a control device of the radio frequency switch and a computer readable storage medium, which can obviously improve the power capacity and isolation of the radio frequency switch.
In a first aspect, an embodiment of the present invention provides a radio frequency switch, including:
The radio frequency signal input end is connected with the first power supply through the radio frequency isolation device;
The radio frequency signal output end is connected with at least one section of first impedance transformation line between the radio frequency signal output end and the radio frequency signal input end;
And at least one section of the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively switchably connected to a grounding end or a second power supply through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply.
In a second aspect, an embodiment of the present invention provides an electronic device, including a radio frequency switch as described in the first aspect above.
In a third aspect, an embodiment of the present invention provides a control method for a radio frequency switch, where the radio frequency switch includes a radio frequency signal input end and a radio frequency signal output end, where the radio frequency signal input end is connected to a first power supply through radio frequency isolation, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is used to implement impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively switchably connected to a ground end or a second power supply through a first PIN diode and a second PIN diode, where a voltage of the second power supply is higher than a voltage of the first power supply;
The control method comprises the following steps:
switching the two ends of the first impedance transformation line to be connected to a grounding end through a first PIN diode and a second PIN diode respectively so as to switch off radio frequency signals between the first impedance transformation lines; or alternatively
And switching the two ends of the first impedance transformation line to be connected to a second power supply through a first PIN diode and a second PIN diode respectively so as to conduct radio frequency signals between the first impedance transformation lines.
In a fourth aspect, an embodiment of the present invention provides a control apparatus, including: a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the control method as described in the third aspect above when executing the computer program.
In a fifth aspect, an embodiment of the present invention provides a computer-readable storage medium storing a computer-executable program for causing a computer to execute the control method according to the above third aspect.
The embodiment of the invention comprises the following steps: the radio frequency switch method is applied to a radio frequency switch, the radio frequency switch comprises a radio frequency signal input end and a radio frequency signal output end, the radio frequency signal input end is connected with a first power supply through a radio frequency isolation device, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively switchably connected to a grounding end or a second power supply through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the problems that the power capacity is limited and the isolation degree is insufficient in a radio frequency switch used by the current TDD power amplifier can be solved. Compared with the existing radio frequency switch, the invention can obviously improve the power capacity and isolation of the radio frequency switch, and can adopt a plurality of PIN diodes to be connected in parallel and an impedance transformation line to further improve the power tolerance and isolation according to requirements.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate and do not limit the invention.
Fig. 1A is a schematic structural diagram of a radio frequency switch according to an embodiment of the present invention;
FIG. 1B is a schematic diagram of another RF switch according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a 1/4*n wavelength RF switch according to one embodiment of the present invention;
Fig. 3 is a schematic structural diagram of a high isolation multi-stage rf switch according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a connection of a TDD power emission frequency switch circuit according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a control device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It should be understood that in the description of the embodiments of the present invention, plural (or multiple) means two or more, and that greater than, less than, exceeding, etc. are understood to not include the present number, and that greater than, less than, within, etc. are understood to include the present number. If any, the terms "first," "second," etc. are used for distinguishing between technical features only, and should not be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Aiming at the problems of limited power capacity and insufficient isolation of a radio frequency switch used in a current TDD power amplifier, the embodiment of the invention provides a radio frequency switch, a control method thereof and electronic equipment, wherein the radio frequency switch is applied to the radio frequency switch, the radio frequency switch comprises a radio frequency signal input end and a radio frequency signal output end, the radio frequency signal input end is connected with a first power supply through a radio frequency isolation device, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively connected to a grounding end or a second power supply in a switchable manner through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the problems that the power capacity is limited and the isolation degree is insufficient in a radio frequency switch used by the current TDD power amplifier can be solved. Compared with the existing radio frequency switch, the invention can obviously improve the power capacity and isolation of the radio frequency switch, and can adopt a plurality of PIN diodes to be connected in parallel and an impedance transformation line to further improve the power tolerance and isolation according to requirements.
As shown in fig. 1A, fig. 1A is a schematic structural diagram of a radio frequency switch according to an embodiment of the present invention. The radio frequency switch includes an envelope radio frequency signal input terminal RFin and a radio frequency signal output terminal RFout, the radio frequency signal input terminal RFin is connected to the first power supply V1 through a radio frequency isolation device, where the radio frequency isolation device may include, but is not limited to, an impedance transformation line, and a radio frequency inductor. At least one section of first impedance transformation line Z1 is connected between the radio frequency signal output end RFout and the radio frequency signal input end RFin, the first impedance transformation line Z1 is used for realizing impedance transformation from short circuit to open circuit, and two ends A, B of the first impedance transformation line Z1 are respectively connected to the grounding end GND or the second power supply V2 in a switchable manner through a first PIN diode D1 and a second PIN diode D2, wherein the voltage of the second power supply V2 is higher than that of the first power supply V1. In the case where both ends A, B of the first impedance transformation line Z1 are connected to the ground terminal through the first PIN diode D1 and the second PIN diode D2, respectively, the voltage of the first power source V1 is higher than the ground terminal GND, and the operating states of the first PIN diode D1 and the second PIN diode D2 are on states, at this time, the first impedance transformation line Z1 forms impedance transformation from short circuit to open circuit due to being short-circuited, and thus, the radio frequency signal between the first impedance transformation lines Z1 is turned off; under the condition that two ends A, B of the first impedance transformation line Z1 are connected to the second power supply through the first PIN diode D1 and the second PIN diode D2 respectively, the voltage of the first power supply V1 is lower than that of the second power supply V2, the working states of the first PIN diode D1 and the second PIN diode D2 are cut-off states, the first impedance transformation line Z1 is not short-circuited, and the normal path of the radio frequency signal in the first impedance transformation line Z1 is not affected, so that the radio frequency signal is normally conducted. It should be noted that, the radio frequency signal output by the power amplifier enters the radio frequency switch from the RFin, and considering that the average power output by the power amplifier is at least more than 80W (the peak power is about 800W), the PIN diode is connected in series on the radio frequency signal path, which results in overhigh temperature of the PIN diode and larger link insertion loss. In the invention, the RFin and RFout paths are not provided with the PIN diode in series connection, and the PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, so that the power capacity of the radio frequency switch can be improved. And the impedance transformation from short circuit to open circuit is formed by the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. It should be noted that, in the embodiment of the present invention, VCC3V3 may be used for the first power supply V1, VCC48V may be used for the second power supply V2, but the voltages of the first power supply V1 and the second power supply V2 are not limited to specific values, and only the voltage of the second power supply V2 is required to be higher than the voltage of the first power supply V1.
Based on the method, the problem of power capacity of the radio frequency switch is solved on the premise that the PIN diode is used for guaranteeing high isolation, high linearity and low insertion loss. In order to achieve the output power level of the system, the high-isolation, high-linearity, low-loss and high-power radio frequency switch with the average power resistance of more than 80W (peak power of 800W), the switching time of 1-2 us, the insertion loss of less than 0.2dB, the isolation of more than 35dB and the IIP3 of more than 80dBm is realized through the design structure of the invention. The invention can be applied to a sub-band full duplex model, realizes the rapid switching of different sub-band filters among TDD time slots, and solves the problems of limited power capacity and isolation of a high-power radio frequency switch used by a TDD power amplifier. Therefore, the invention can obviously improve the power capacity and isolation of the high-power radio frequency switch, ensure that the average power of the switch reaches more than 80W (peak power 800W), has the isolation of 35dBc and can be continuously improved according to the requirement.
In an embodiment, as shown in fig. 2, the first impedance transformation line Z1 may be a 1/4 wavelength impedance transformation line, or may be an impedance transformation line with an integer multiple of 1/4 wavelength, that is, 1/4*n wavelength (n=1, 2,3 …), to implement a high-power and high-isolation index, where the wavelength is a wavelength of the radio frequency signal, and the wavelength may be determined by dividing the speed of light by the frequency of the radio frequency signal. It should be noted that, as shown in fig. 3, a 1/4 wavelength+power supply network with cascaded stages may also be used to achieve a higher isolation, where the power supply network includes a first power supply and a second power supply. It should be noted that the present invention can be applied to different frequency bands, such as 1.8G, 2.6G, 3.5G, 4.9G, etc., only by corresponding 1/4 wavelength impedance variation to the frequency of the corresponding radio frequency signal and properly adjusting 1/2/3 of the power supply network.
In an embodiment, as shown in fig. 1B, for a specific manner in which the rf signal input terminal RFin is connected to the first power source V1 through rf isolation, the rf signal input terminal RFin may be connected to the first power source V1 through the second impedance transformation line Z2. In the case that the rf signal input terminal RFin is connected to the first power supply V1 through the second impedance transformation line Z2, since the first power supply V1 is grounded through the first resistor R and the first rf microwave capacitor C1, the second impedance transformation line Z2 is shorted to form an impedance transformation from a short circuit to an open circuit, and thus the rf signal between the second impedance transformation lines Z2 is turned off, so that the isolation of the rf switch can be further improved. It should be noted that, the radio frequency signal input end RFin may also be connected to the first power supply V1 through a radio frequency inductor, and in the case that the radio frequency signal input end RFin is connected to the first power supply V1 through a radio frequency inductor, radio frequency isolation between the first power supply V1 and the radio frequency signal input end RFin may also be achieved.
In an embodiment, the first impedance transformation line Z1 and the second impedance transformation line Z2 are wavelength impedance transformation lines, wherein the wavelength of the wavelength impedance transformation lines is an integer multiple of a quarter wavelength of the radio frequency signal input from the radio frequency signal input terminal, i.e. 1/4*n wavelength (n=1, 2,3 …). It should be noted that when the wavelength of the wavelength impedance transformation line is an odd multiple of a quarter wavelength of the rf signal input from the rf signal input end, i.e. 1/4*n wavelength (n=1, 3,5 …), the isolation effect of the rf switch is better.
In an embodiment, as shown in fig. 1B, the first PIN diode D1 and the second PIN diode D2 are connected to the switch K through a first inductor L1 and/or a second inductor L2, where the first inductor L1 may be used to implement radio frequency isolation between the second power supply V2 and the radio frequency signal input terminal RFin, the second inductor L2 may be used to implement radio frequency isolation between the second power supply V2 and the radio frequency signal output terminal RFout, and the switch K is used to switch the connection V2 between the ground terminal GND and the second power supply V2. The two ends of the first inductor L1 are respectively grounded through a second radio frequency microwave capacitor C2 and a third radio frequency microwave capacitor C3, and the two ends of the second inductor L2 are respectively grounded through a fourth radio frequency microwave capacitor C4 and a fifth radio frequency microwave capacitor C5. When the switch K is switched to the ground end GND, the first PIN diode D1 at the point A and the second PIN diode D2 at the point B are conducted and pass through the radio frequency microwave capacitors C2, C3, C4 and C5 to the ground to form a radio frequency signal short-circuit point, the short-circuit point at the point B can form an open circuit at the point A after passing through the first impedance transformation line Z1, and the radio frequency signal is totally reflected at the point A to form a radio frequency signal turn-off. When the change-over switch K is switched to the second power supply V2, the first PIN diode D1 at the point A and the second PIN diode at the point B are cut off, and the point A and the point B are impedance open-circuit points, so that a normal radio frequency channel is not influenced, and normal conduction of radio frequency signals is formed. The radio frequency microwave capacitors C2, C3, C4 and C5 all play a role in radio frequency isolation.
In an embodiment, as shown in fig. 1B, the rf signal input terminal RFin is connected to the first impedance transformation line Z1 through a sixth rf microwave capacitor C6, and the first impedance transformation line Z1 is connected to the rf signal output terminal RFout through a seventh rf microwave capacitor C7. The sixth rf microwave capacitor C6 and the seventh rf microwave capacitor C7 both play a role of rf isolation.
It should be noted that the radio frequency switch designed by the invention can meet the power capacity of more than 80W of average power, the isolation degree is more than 35dB, and the insertion loss is controlled within 0.2 dB. Meanwhile, according to actual needs, isolation can be further improved by adding the PIN diode and the impedance transformation line, and the effect of the isolation is far better than that of a radio frequency switch device in the prior art. The radio frequency switch is simple in design, only a common PIN diode is needed, and the radio frequency switch has the advantage of low cost.
The embodiment of the invention also provides electronic equipment which comprises the radio frequency switch.
In an embodiment, the electronic device adopts the radio frequency switch, so the electronic device can also solve the problems of limited power capacity and insufficient isolation of the radio frequency switch used in the current TDD power amplifier. The radio frequency switch of the electronic equipment comprises a radio frequency signal input end and a radio frequency signal output end, wherein the radio frequency signal input end is connected with a first power supply through a radio frequency isolation device, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end and used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively connected to a grounding end or a second power supply in a switchable manner through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the power capacity and isolation of the radio frequency switch can be obviously improved.
The embodiment of the invention also provides a control method of the radio frequency switch, the radio frequency switch comprises a radio frequency signal input end and a radio frequency signal output end, the radio frequency signal input end is connected with a first power supply through a radio frequency isolation device, at least one section of first impedance transformation line is connected between the radio frequency signal output end and the radio frequency signal input end, the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively connected to a grounding end or a second power supply in a switchable manner through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply;
the control method includes, but is not limited to, the steps of:
Step S100: switching the two ends of the first impedance transformation line to be connected to the grounding end through the first PIN diode and the second PIN diode respectively so as to cut off radio frequency signals between the first impedance transformation lines; or switching the two ends of the first impedance transformation line to be connected to the second power supply through the first PIN diode and the second PIN diode respectively so as to conduct radio frequency signals between the first impedance transformation lines.
In an embodiment, as shown in fig. 1A, in a case where two ends A, B of the first impedance transformation line Z1 are connected to the ground terminal through the first PIN diode D1 and the second PIN diode D2, respectively, the voltage of the first power source V1 is higher than the ground terminal GND, the operation states of the first PIN diode D1 and the second PIN diode D2 are in a conductive state, at this time, the first impedance transformation line Z1 is formed with an impedance transformation from a short circuit to an open circuit due to a short circuit, and thus, the radio frequency signal between the first impedance transformation line Z1 is turned off; under the condition that two ends A, B of the first impedance transformation line Z1 are connected to the second power supply through the first PIN diode D1 and the second PIN diode D2 respectively, the voltage of the first power supply V1 is lower than that of the second power supply V2, the working states of the first PIN diode D1 and the second PIN diode D2 are cut-off states, the first impedance transformation line Z1 is not short-circuited, and the normal path of the radio frequency signal in the first impedance transformation line Z1 is not affected, so that the radio frequency signal is normally conducted.
In an embodiment, as shown in fig. 1B, switching the connection V2 between the ground GND and the second power supply V2 may be achieved by switching the switch K. As shown in fig. 1, two ends of the first inductor L1 are grounded through a second rf microwave capacitor C2 and a third rf microwave capacitor C3, respectively, and two ends of the second inductor L2 are grounded through a fourth rf microwave capacitor C4 and a fifth rf microwave capacitor C5, respectively. When the switch K is switched to the ground end GND, the first PIN diode D1 at the point A and the second PIN diode D2 at the point B are conducted and pass through the radio frequency microwave capacitors C2, C3, C4 and C5 to the ground to form a radio frequency signal short-circuit point, the short-circuit point at the point B can form an open circuit at the point A after passing through the first impedance transformation line Z1, and the radio frequency signal is totally reflected at the point A to form a radio frequency signal turn-off. When the change-over switch K is switched to the second power supply V2, the first PIN diode D1 at the point A and the second PIN diode at the point B are cut off, and the point A and the point B are impedance open-circuit points, so that a normal radio frequency channel is not influenced, and normal conduction of radio frequency signals is formed.
The radio frequency switch provided by the application is further described below with reference to the accompanying drawings and the specific embodiments.
Fig. 4 is a schematic diagram of a connection of a sub-band full-duplex TDD power radial frequency switching circuit to which the radio frequency switch of the present invention is applied.
Taking the downlink operation of the full duplex TDD power of the sub-band as an example, the working mechanism is as follows:
when the subband Band 0 filter is on, the Band 1 filter is off. At this time, the power supply VCC3V3 of the Band 1 filter is long, as shown in fig. 1, the cathode power supply of the first PIN diode D1 and the second PIN diode D2 is cut to GND, the first PIN diode D1 at the point a and the second PIN diode D2 at the point B are turned on, and pass through the rf microwave capacitors C2, C3, C4, and C5 to ground to form an rf short-circuit point, the point B will form an open circuit at the point a after passing through the 1/4 wavelength conversion line, the rf signal is totally reflected at the point a, enters the 3 port of the circulator, is absorbed by the load, and forms an rf signal turn-off.
When the subband Band 1 filter is on, the Band 0 filter is off. At this time, the power supply VCC3V3 of the Band 0 filter is long, as shown in fig. 1, the cathode power supply of the first PIN diode D1 and the second PIN diode D2 is cut to VCC48V, the first PIN diode D1 at the point a and the second PIN diode D2 at the point B are turned off, and the impedance open circuit points are both the point a and the point B, so that the normal path of the radio frequency is not affected, and the normal conduction of the radio frequency signal is formed.
Based on the above, the radio frequency switch designed by the invention can meet the power capacity of more than 80W of average power, the isolation degree is more than 35dB, and the insertion loss is controlled within 0.2 dB. Meanwhile, according to actual needs, isolation can be further improved by adding the PIN diode and the impedance transformation line, and the effect of the isolation is far better than that of a radio frequency switch device in the prior art. The radio frequency switch is simple in design, only a common PIN diode is needed, and the radio frequency switch has the advantage of low cost.
As shown in fig. 5, the embodiment of the invention further provides a control device.
Specifically, the control device includes: one or more processors and memory, one processor and memory being illustrated in fig. 5. The processor and the memory may be connected by a bus or otherwise, for example in fig. 5.
The memory is used as a non-transitory computer readable storage medium for storing a non-transitory software program and a non-transitory computer executable program, such as the control method in the embodiments of the present invention described above. The processor implements the control method in the above-described embodiments of the present invention by running a non-transitory software program stored in a memory, as well as the program.
The memory may include a memory program area and a memory data area, wherein the memory program area may store an operating system, at least one application program required for a function; the storage data area may store data and the like necessary for performing the control method in the embodiment of the present invention described above. In addition, the memory may include high-speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, the memory optionally includes memory remotely located relative to the processor, the remote memory being connectable to the terminal through a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The non-transitory software program and the program required for implementing the control method in the above-described embodiments of the present invention are stored in the memory, and when executed by the one or more processors, the control method in the above-described embodiments of the present invention is executed, for example, the method step S100 described above is executed, and both ends of the first impedance transformation line are switched to be connected to the ground terminal through the first PIN diode and the second PIN diode, respectively, so that the radio frequency signal between the first impedance transformation lines is turned off; or switching the two ends of the first impedance transformation line to be connected to the second power supply through the first PIN diode and the second PIN diode respectively so as to conduct radio frequency signals between the first impedance transformation lines. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the power capacity and isolation of the radio frequency switch can be obviously improved.
Furthermore, the embodiment of the present invention provides a computer-readable storage medium storing a computer-executable program that is executed by one or more control processors, and that causes the one or more processors to perform the control method in the embodiment of the present invention, for example, to perform the method step S100 described above, where two ends of the first impedance transformation line are switched to be connected to the ground through the first PIN diode and the second PIN diode, respectively, so as to turn off the radio frequency signal between the first impedance transformation lines; or switching the two ends of the first impedance transformation line to be connected to the second power supply through the first PIN diode and the second PIN diode respectively so as to conduct radio frequency signals between the first impedance transformation lines. The PIN diode is connected with the impedance transformation line in parallel to improve the power capacity, and the impedance transformation from short circuit to open circuit is formed through the on-off of the PIN diode and the impedance transformation line, so that the isolation degree of the radio frequency switch is improved. Based on the method, the power capacity and isolation of the radio frequency switch can be obviously improved.
Those of ordinary skill in the art will appreciate that all or some of the steps, systems, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes both volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable programs, data structures, program modules or other data, as known to those skilled in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer. Furthermore, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable programs, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media.
While the preferred embodiment of the present invention has been described in detail, the present invention is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit and scope of the present invention, and these equivalent modifications or substitutions are included in the scope of the present invention as defined in the appended claims.
Claims (10)
1. A radio frequency switch, comprising:
The radio frequency signal input end is connected with the first power supply through the radio frequency isolation device;
The radio frequency signal output end is connected with at least one section of first impedance transformation line between the radio frequency signal output end and the radio frequency signal input end;
And at least one section of the first impedance transformation line is used for realizing impedance transformation from short circuit to open circuit, and two ends of the first impedance transformation line are respectively switchably connected to a grounding end or a second power supply through a first PIN diode and a second PIN diode, wherein the voltage of the second power supply is higher than that of the first power supply.
2. The radio frequency switch of claim 1, wherein the radio frequency signal input is connected to a first power supply via a second impedance transformation line or a radio frequency inductance, the first power supply being grounded via a first resistor and a first radio frequency microwave capacitor, wherein the second impedance transformation line is configured to perform an impedance transformation from a short circuit to an open circuit.
3. The radio frequency switch of claim 2, wherein the first impedance transformation line and the second impedance transformation line are wavelength impedance transformation lines, wherein the wavelength of the wavelength impedance transformation lines is an integer multiple of a quarter wavelength of a radio frequency signal input from the radio frequency signal input.
4. A radio frequency switch according to claim 3, wherein the wavelength impedance transformation line has a wavelength that is an odd multiple of a quarter wavelength of a radio frequency signal input from the radio frequency signal input terminal.
5. The radio frequency switch according to claim 1, characterized in that the first PIN diode is connected to a change-over switch via a first inductance and/or the second PIN diode is connected to the change-over switch via a second inductance, the change-over switch being arranged to switch the connection between the ground terminal and the second power supply.
6. The rf switch of claim 5, wherein the first inductor is grounded at both ends through a second rf microwave capacitor and a third rf microwave capacitor, respectively.
7. The radio frequency switch of claim 1 or 6, wherein the second inductor is grounded at both ends through a fourth radio frequency microwave capacitor and a fifth radio frequency microwave capacitor, respectively.
8. The radio frequency switch of claim 1, wherein the radio frequency signal input is connected to the first impedance transformation line through a sixth radio frequency microwave capacitor.
9. The radio frequency switch according to claim 1 or 8, wherein the first impedance transformation line is connected to the radio frequency signal output terminal through a seventh radio frequency microwave capacitor.
10. An electronic device comprising a radio frequency switch as claimed in any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211258904.5A CN117938136A (en) | 2022-10-14 | 2022-10-14 | Radio frequency switch, control method thereof and electronic equipment |
| PCT/CN2023/119145 WO2024078260A1 (en) | 2022-10-14 | 2023-09-15 | Radio-frequency switch and control method therefor, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211258904.5A CN117938136A (en) | 2022-10-14 | 2022-10-14 | Radio frequency switch, control method thereof and electronic equipment |
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| Publication Number | Publication Date |
|---|---|
| CN117938136A true CN117938136A (en) | 2024-04-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211258904.5A Pending CN117938136A (en) | 2022-10-14 | 2022-10-14 | Radio frequency switch, control method thereof and electronic equipment |
Country Status (2)
| Country | Link |
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| CN (1) | CN117938136A (en) |
| WO (1) | WO2024078260A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201122649Y (en) * | 2007-05-24 | 2008-09-24 | 深圳国人通信有限公司 | Radio frequency converting switch |
| CN103199829B (en) * | 2013-02-28 | 2016-05-04 | 广东宽普科技股份有限公司 | A kind of device that promotes RF switch power capability |
| US10210946B2 (en) * | 2016-07-08 | 2019-02-19 | Analog Devices, Inc. | Electronic switch exhibiting low off-state leakage current |
| CN109193079A (en) * | 2018-11-19 | 2019-01-11 | 重庆西南集成电路设计有限责任公司 | Impedance converts single-pole double throw microwave switch |
| CN113872584A (en) * | 2020-06-30 | 2021-12-31 | 中兴通讯股份有限公司 | Switch circuit, circuit board assembly and electronic equipment |
| CN112202409B (en) * | 2020-09-21 | 2024-05-03 | 普联国际有限公司 | Low noise amplifying module, receiver and signal processing method |
-
2022
- 2022-10-14 CN CN202211258904.5A patent/CN117938136A/en active Pending
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2023
- 2023-09-15 WO PCT/CN2023/119145 patent/WO2024078260A1/en unknown
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| WO2024078260A1 (en) | 2024-04-18 |
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