CN117929523A - System for monitoring defects in integrated system packages - Google Patents

System for monitoring defects in integrated system packages Download PDF

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Publication number
CN117929523A
CN117929523A CN202311372410.4A CN202311372410A CN117929523A CN 117929523 A CN117929523 A CN 117929523A CN 202311372410 A CN202311372410 A CN 202311372410A CN 117929523 A CN117929523 A CN 117929523A
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CN
China
Prior art keywords
die
monitoring
support base
region
transducer
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Pending
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CN202311372410.4A
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Chinese (zh)
Inventor
D·朱斯蒂
M·德尔萨尔托
F·夸利亚
E·杜奇
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STMicroelectronics SRL
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STMicroelectronics SRL
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Priority claimed from US18/489,737 external-priority patent/US20240230596A9/en
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of CN117929523A publication Critical patent/CN117929523A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/04—Analysing solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/023—Solids

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  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)

Abstract

A system for monitoring defects within an integrated system package is disclosed. An integrated electronic system has a package formed from a support pedestal and a coating region disposed on the support pedestal and having at least a first system die including a semiconductor material coupled to the support pedestal and disposed in the coating region. The integrated electronic system also has a monitoring system within the package configured to determine the occurrence of defects in the coated area by the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, the characteristics of which are affected by and thus indicative of the defects.

Description

System for monitoring defects in integrated system packages
Technical Field
The present disclosure relates to a system for monitoring defects within an integrated system package.
Background
In the field of miniaturized electronics, a known trend is to provide complex integrated systems (systems in so-called SiP-packages) within a single package.
Such systems generally comprise a number of dies of semiconductor material, integrated with corresponding sensors (in particular MEMS-microelectromechanical systems-sensors) or corresponding integrated electronic circuits (so-called ASIC-application specific integrated circuits), which are housed in a single package, in particular in a corresponding coating material (typically epoxy).
To date, there is no effective tool to detect the presence of defects (e.g., cracking, delamination, or some other type of defect) within the package of an integrated system, if no impact on the operability of the integrated system is observed afterwards (i.e., associated performance degradation or, in the worst case, failure to operate).
Fault analysis techniques are also proposed to estimate the remaining life of the integrated system by statistical analysis; however, it is clear that these techniques are not entirely satisfactory, as they do not provide accurate information about the pattern and actual time of occurrence of a fault or failure due to their probabilistic nature.
Disclosure of Invention
The present disclosure aims to enable efficient real-time monitoring of any degradation of packaging or coating materials within packages of an integrated system in such a way as to increase the reliability of the same integrated system.
At least one embodiment of the present disclosure may be summarized as including a system comprising: a package, the package comprising: a support base; a coating region on the support base; at least a first system die coupled to the support pedestal and located in the coating region; and a monitoring system in the coated area, the monitoring system being configured to determine in operation the occurrence of a defect in the coated area by the emission of a sound detection wave and the acquisition of a corresponding received sound wave, the sound detection wave characteristics being affected by the defect.
Drawings
For a better understanding of the present disclosure, preferred embodiments thereof will now be described, purely by way of non-limiting example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram portion of an integrated system;
FIG. 2 is a schematic diagram portion of an integrated system provided with a monitoring system according to an embodiment of the present disclosure;
FIG. 3 illustrates a circuit diagram of electronic circuitry associated with a transducer device of an embodiment of the monitoring system of the present disclosure;
FIG. 4 is a schematic portion of an integrated system provided with a monitoring system according to another embodiment of the present disclosure;
FIG. 5 shows a graph of monitored quantities in accordance with an embodiment of the monitoring system of the present disclosure;
FIG. 6 is a schematic cross-section of a transducer device according to an embodiment of the monitoring system of the present disclosure;
fig. 7A and 7B are top and schematic cross-sectional views, respectively, of a matrix of PMUT elements of a transducer device of an embodiment of a monitoring system according to the invention;
FIG. 8 is a schematic cross-section of an integrated system provided with a monitoring system according to yet another embodiment of the present disclosure; and
Fig. 9A-9C are schematic top views of possible implementations of an integrated system provided with a monitoring system according to embodiments of the present disclosure.
Detailed Description
As will be described in detail, one aspect of the present disclosure contemplates integrating a monitoring system within a package of the integrated system, the monitoring system being configured to determine in real time the occurrence of defects within the respective coating material by emitting acoustic detection waves, in particular ultrasonic waves, and collecting and processing the respective received acoustic waves, the characteristics of the acoustic detection waves being affected by and thus indicative of the defects.
For example, fig. 1 schematically shows an integrated system 1 formed in a single package 2, the package 2 comprising a supporting substrate or base 4, such as a so-called leadframe or an organic substrate, and a coating area 5, such as an epoxy, formed over the supporting base 4.
A number of dies 6 (hereinafter referred to as "system dies", three of which are described by way of example) are coupled to the support base 4, for example by respective areas 7 of adhesive material (so-called "die attach") or by interposed connection elements 8 (for example in the form of conductive pads or balls). The system dies 6 are arranged, for example, side by side and are accommodated within the coating area 5 where they are completely coated.
Wires 9 connect the individual system dies 6 to each other (using so-called "wire bonding" techniques) and also connect the same system die 6 with contact pads and/or electrical connection tracks (not shown) formed on the surface of the support base 4.
It is known that in these integrated systems 1, in particular in the respective packages 2, damage or breakage (so-called "failure" phenomena) may occur, which may lead to a decay of the electrical performance or, in the worst case, to a failure of the same integrated system 1.
For example, cracks or crack formation may occur in the coated region 5; another common degradation phenomenon is represented by the so-called delamination (delamination), which may occur within the package 2 in an "embedded" manner, and by the total or partial separation between the respective top and/or bottom surfaces of the system die 6 and the coating region 5 (typically, such delamination may occur at the interface between the same system die 6 and the coating region 5).
To date, there has been no effective tool to detect the presence of the above-mentioned defects within the package 2 of the integrated system 1, if no later observed impact on the operability of the same integrated system 1 (i.e. associated performance degradation or, in the worst case, no operation).
Fault analysis techniques have also been proposed to estimate the remaining life of the integrated system 1 by statistical analysis; it is clear, however, that these techniques are not entirely satisfactory, as they, due to their probabilistic nature, do not provide accurate information about the pattern and actual time associated with the occurrence of damage or disablement.
As schematically shown in fig. 2 (wherein elements similar to the other elements already discussed in fig. 1 are denoted by the same reference numerals and are not described in detail), the integrated system 1 according to one aspect of the present disclosure therefore comprises, within the respective package 2, a monitoring system 14, which monitoring system 14 is provided with at least one transducer device 15, which transducer device 15 is configured for emitting acoustic detection waves, in particular ultrasound waves.
In particular, the transducer device 15 is a micromechanical ultrasonic transducer, a so-called MUT, which is made in a respective die 16 (hereinafter referred to as a monitor die) using micromachining techniques of semiconductor material, for example coupled to the support base 4 within the coating region 5 by a respective die attach region 17.
In one embodiment, the transducer device 15 is a piezoelectric transducer PMUT (piezoelectric micromachined ultrasonic transducer).
The transducer device 15 is biased (e.g., by ASIC drive circuitry, which may be integrated in the same monitor die 16) so as to emit ultrasonic waves that propagate within the coating region 5 in a manner confined within the coating region 5 until reaching the interface between the system die 6 and the coating region 5.
The same transducer device 15 may be configured to receive and process echoes of ultrasonic waves whose characteristics are affected by the presence of defects (e.g., delamination at the interface between the system die 6 and the coated area 5) within the package 2 in order to detect the presence of the same defects.
For example, fig. 1 above shows delamination 10 at the above interface, particularly where a void region is formed between the top surface (here denoted by 6 a) of the die or a portion thereof and the over-coating region 5. The blank area may be non-uniform over the top surface 6a of the system die 6, for example in terms of corresponding thickness in the vertical direction (along a vertical axis orthogonal to the same top surface 6 a).
In particular, these defects may determine the variation of the acoustic impedance of the respective coated region 5 and thus the different reflection (or transmission) modes of the acoustic detection wave.
According to one aspect of the present disclosure, the above-described processing of the acoustic detection waves may be performed by ASIC read circuits integrated in the monitor die 16 of the same transducer device 15.
In this regard, and purely by way of example, fig. 3 shows a possible implementation of an ASIC circuit, indicated with 100, associated with the transducer device 15 (here schematically shown) and configurable to operate alternately as the aforementioned drive and read circuits for the acoustic detection waves.
ASIC circuit 100 includes: an interface 101 configured to receive one or more configuration signals (SDA, SCL) for configuring the same ASIC circuit 100 as a drive or read circuit; a controller 102 coupled to the interface 101 to receive the configuration signal; a non-volatile memory 103 operatively associated with the controller 102; a drive branch 104 comprising an amplifier 105, which may be selectively coupled to the transducer device 15 to drive the same transducer device 15; and a read branch 106 comprising an ADC (analog-to-digital) converter 107 and a DSP (digital signal processor) 108, the read branch 106 being selectively coupleable to the transducer device 15 for reading the acoustic detection waves and providing an associated read signal to the controller 102.
In one possible embodiment, illustrated by way of example in fig. 4, the monitoring system 14 comprises at least: a first transducer device, again denoted 15, operates as a transmitter of acoustic detection waves, in particular ultrasonic waves, so that they impinge on at least one system chip 6, desiring to monitor the respective interface of this system chip 6 with the coating area 5; and a second transducer device 18 that operates as a receiver of the acoustic detection waves (after the same acoustic detection waves have impacted and passed through the aforementioned interface to be monitored).
The first transducer device 15 and the second transducer device 18 may both be of the PMUT type, in which case they are arranged in respective monitor dies 16 of semiconductor material, which monitor dies 16 may be arranged side by side in the longitudinal direction on opposite sides of the system die 6 (thus, the system die 6 is interposed between the respective monitor dies 16 of the first transducer device 15 and the second transducer device 18).
Fig. 5 shows a graph corresponding to the sound pressure Pa value associated with the acoustic detection wave in the absence (no delamination (NoDelamination)) or presence of delamination 10, which may affect only the top surface (DelaminationTOP) or both surfaces (DelaminationALL) of the system die 6.
In the case of defects at the interface between the system die 6 and the coating area 5, the characteristics of the detection signal (due to the arrival of the acoustic detection wave at the second transducer device 18), for example in terms of amplitude and/or corresponding time trend, for example with respect to the arrival time, the so-called "time of flight") are considerably different with respect to the case where the same defects are not present.
In particular, in the case of defects, for example the presence of the aforementioned delamination 10 at the interface between the system die 6 and the coating region 5, the amplitude of the detected signal is rather low, in the example shown about half.
Based on the processing of the characteristics of the detected signal (e.g. by analysis of the amplitude or energy content within a given time window), the occurrence of defects in the package 2 of the integrated system 1 can thus be detected in real time.
In more detail, the aforementioned transducer device 15 may be made as schematically shown in fig. 6, i.e. with a stacked arrangement of a respective matrix or array 20 of PMUT transducer elements for transmitting and/or receiving ultrasound waves and a respective ASIC circuit 22 coupled to the same matrix 20 (with the function of driving and/or processing the detected signals, depending on the operation as ultrasound transmitter and/or receiver). The aforementioned matrix 20 and the aforementioned ASIC circuit 22 may be coupled on opposite sides of a common substrate 24, with respective connection elements 28 at the bottom, in the form of conductive balls in the example, for electrical coupling to a support base 4 (not shown here) of the package 2 of the integrated system 1.
As schematically shown in fig. 7A and 7B, the aforementioned matrix 20 is made of a plurality of PMUT transducer elements 30, each PMUT transducer element 30 comprising a respective membrane 32 suspended over a cavity 34 buried in a surface portion of the substrate 24 and a respective piezoelectric stack 38 formed (in a manner not described in detail) by a bottom electrode, a region of piezoelectric material, and a top electrode (the region of piezoelectric material being interposed between the bottom electrode and the top electrode).
In a manner not illustrated in detail, suitable electrical connection paths through the substrate 24 connect the bottom and top electrodes to the respective ASIC circuits 22, which ASIC circuits 22 may include: a drive module for providing appropriate bias signals to the bottom and top electrodes to cause deformation of the membrane 32 and to generate acoustic detection waves (particularly in the ultrasonic range, e.g., at a resonant frequency of about 5 MHz); and/or a detection module for reading the electrical signals converted by the same bottom electrode and top electrode when the membrane 32 is deformed by impinging acoustic waves, for example by receiving the above-mentioned acoustic detection waves.
The appropriate matrix arrangement of PMUT transducer elements 30 may allow for a desired scan of defects within the package 2 or in any case to guide the generated acoustic detection towards the interface to be monitored between the system die 6 and the coating region 5 in a desired manner.
As schematically shown in fig. 8, another aspect of the present disclosure contemplates the presence of an interface region 40 between the top surface (indicated by 16 a) of the monitor die 16 and the coating region 5 of the first transducer device 15 and the second transducer device 18 (or only the first transducer device 15 if the first transducer device 15 is used as both a transmitter and a receiver). In particular, in this case, the interface region 40 has an acoustic impedance matching function.
With reference to the previously discussed embodiments, for example, the interface region 40 may be disposed between the matrix 20 of PMUT transducer elements 30 (in particular, between the respective piezoelectric stacks 38) and the previously described coated region 5.
Depending on the material of the coated area 5, in practice even significant reflections of the generated acoustic detection waves may occur due to acoustic impedance mismatch between the transducer material (e.g. the piezoelectric material of the PMUT transducer element 30) and the same coated area 5.
For example, in the case of epoxy, the coated region 5 may have a characteristic acoustic impedance Z 1 equal to 2.64· 6Kg/m2 ·s, as compared to the acoustic impedance Z 2 of the piezoelectric material of the transducer equal to 3.25· 6Kg/m2 ·s.
The thickness of the above-mentioned interface region 40 is advantageously set to 1/4 wavelength and the corresponding characteristic impedance Z 3 is calculated as: In the example equal to 2.93.10 10 6Kg/m2.s.
In this example, the interface region 40 may comprise a hard silicone material, such as silicone plastic, having a characteristic impedance of 2.73·10 6Kg/m2 ·s, which is closest to the aforementioned value of impedance Z 3.
The advantages of the present disclosure will be apparent from the foregoing description.
In any case, it is emphasized again that the monitoring system 14 allows advantageously detecting in real time the presence of defects, such as delamination, within the package 2 of the integrated system 1.
The described disclosure is simple and inexpensive to implement, and does not result in a substantial increase in manufacturing costs.
Thus, the present disclosure is particularly advantageous for implementation, for example, in electronic devices, such as portable or wearable (e.g., smart bracelets or watches).
The electronic device may include a main controller (microcontroller, microprocessor or similar digital processing unit) that may be coupled to the monitoring system 14 to receive information corresponding to the detection of defects within the package 2.
Based on the above defect detection, the master controller may perform appropriate actions, such as transmitting a warning signal associated with the presence of the same defect.
Finally, it is clear that modifications and variations may be made to what has been described and illustrated, without thereby departing from the scope of the present disclosure, as defined in the annexed claims.
In particular, it is emphasized that the monitoring system 14 may comprise a plurality of transducer devices (indicated as a whole by 15) within the package 2 configured and arranged for monitoring defects within the coating area 5, acting as transmitters or receivers of acoustic detection waves.
As an example, fig. 9A to 9C show possible variant embodiments, in which the integrated system 1 comprises by way of example four system dies 6 (three dies integrating the respective ASIC electronic circuits, one die integrating the MEMS sensor).
In particular, in fig. 9A, the monitoring system 14 comprises four transducer devices 15, arranged in plan view at the vertex of the support base 4 of the package 2 (having a substantially rectangular shape in plan view); in this case, the above-mentioned system dies 6 are arranged centrally in a position close to each other with respect to the same support base 4.
In fig. 9B, the monitoring system 14 comprises (in addition to the aforementioned four transducer devices 15) a further transducer device 15, which transducer device 15 is arranged in the centre of the aforementioned support base 4, surrounded by the system die 6.
In fig. 9C, the monitoring system 14 comprises nine transducer devices 15 arranged in three rows, located outside and in the center of the support base 4, respectively; in this case, the system die 6 is arranged between respective rows of transducer devices 15.
It is however evident that further and different arrangements of the transducer device 15 may be provided and implemented in order to obtain a desired redundancy of monitoring information for detecting defects within the package 2 of the integrated system 1.
Furthermore, it is emphasized that in alternative embodiments, the transducer device 15 may comprise a corresponding capacitive micromachined ultrasonic transducer CMUT.
The driving and/or detection circuitry associated with the transducer device 15 may alternatively be provided external to the monitoring die 16 of the same transducer device 15, for example within the aforementioned main controller in which the electronics of the integrated system 1 are used.
An integrated electronic system (1) is provided with a package (2) formed by a support base (4) and a coating area (5) arranged on the support base (4) and can be summarized as comprising at least a first system die (6) comprising a semiconductor material, coupled to the support base (4) and arranged in the coating area (5), and a monitoring system (14) within the package (2) configured to determine occurrence of defects within the coating area (5) by emitting acoustic detection waves, characteristics of which are affected by and thus indicative of the above-mentioned defects, and collecting corresponding received acoustic waves.
The defect may include delamination of a top surface (6 a) and/or a bottom surface of the first system die (6) from the coating region (5) partially or entirely, the bottom surface being coupled to a support pedestal (4).
The monitoring system (14) may comprise at least one transducer device (15) formed in a first monitoring die (16), the transducer device being coupled to a support base (4) within the coating region (5), the transducer device (15) being a micro-mechanical ultrasound transducer, MUT.
The transducer device (15) may be a piezoelectric transducer, PMUT-piezoelectric micromechanical ultrasound transducer.
The transducer device (15) may be a capacitive transducer, CMUT capacitive micromachined ultrasonic transducer.
The transducer device (15) may be configured to emit ultrasonic waves that propagate within the coating region (5) in a manner confined to the coating region (5) so as to reach the system die (6); and the monitoring system (14) may be configured to process signals detected from received ultrasonic waves, characteristics of which may be affected by the presence of the defect, so as to detect the presence of the defect in real time.
In the case of the presence of said defect, the characteristics with respect to the amplitude and/or the corresponding temporal trend of the detection signal may be different with respect to the case of the absence of the defect.
The system may comprise at least one further transducer device (18) designed to operate as a receiver of acoustic detection waves, formed in the second monitoring die (16), coupled to the support base (4) within the coating area (5); wherein the first system die (6) may be interposed between the first and second monitoring die (16) along the propagation direction of the acoustic detection waves within the coating region (5).
The transducer device (15) may include a matrix (20) of PMUT transducer elements (30) configured for transmitting and/or receiving ultrasound waves, and a corresponding ASIC circuit (22) coupled to the matrix (20) and integrated in the first monitor die (16), the ASIC circuit having the function of driving and/or processing signals detected by the PMUT transducer elements (30).
The matrix (20) and the ASIC circuit (22) may be coupled on opposite sides of a common substrate (24), with connection elements (28) at the bottom for electrical coupling to a support base (4) of a package (2) of an integrated system (1).
The system may further comprise an interface region (40) interposed between a top surface (16 a) of the first monitor die (16) and the coating region (5), the top surface (16 a) being opposite to a bottom surface coupled to the support base (4); the interface region (40) has an acoustic impedance matching function.
The thickness of the interface region (40) may be set to 1/4 of the wavelength of the acoustic detection wave, and the corresponding characteristic impedance Z 3 may be calculated as: Wherein Z 1 is the characteristic impedance of the coated region (5) and Z 2 is the characteristic impedance associated with the transducer device (15).
A method for monitoring an integrated electronic system (1) for the occurrence of defects, the integrated electronic system (1) being provided with a package (2) formed by a support base (4) and a coating area (5) arranged on the support base (4) and being summarised as comprising at least one first system die (6) comprising a semiconductor material, coupled to the support base (4) and arranged in the coating area (5), the method comprising determining the occurrence of defects within the coating area (5) by emitting acoustic detection waves, the characteristics of which are affected by and thus indicative of the aforementioned defects, and collecting corresponding received acoustic waves.
The monitoring may be performed in real time.
The defect may comprise a delamination that is partly or entirely detached from the coated area (5) of the top surface (6 a) and/or bottom surface of the first system die (6), the bottom surface being connected to the support base (4).
The various embodiments described above may be combined to provide further embodiments. Aspects of the embodiments can be modified, if necessary, to employ concepts of the various patents, applications and publications to provide yet further embodiments.
These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the present disclosure.

Claims (20)

1. A system, comprising:
a package, comprising:
A support base;
A coating area on the support base;
At least a first system die coupled to the support pedestal and located in the coating region; and
A monitoring system in the coated area, the monitoring system being configured to determine in operation the occurrence of defects within the coated area by the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, the acoustic detection wave characteristics being affected by the defects.
2. The system of claim 1, wherein the defect comprises a delamination at least partially separate from the coated region.
3. The system of claim 1, wherein the monitoring system comprises a first monitoring die having at least one first transducer device, the first monitoring die being coupled to the support base and located within the coating region, and the at least one first transducer device being a Micromachined Ultrasonic Transducer (MUT).
4. A system according to claim 3, wherein the at least one first transducer device is a piezoelectric transducer (PMUT-piezoelectric micromechanical ultrasound transducer).
5. A system according to claim 3, wherein the at least one first transducer device is a capacitive transducer (CMUT-capacitive micromachined ultrasonic transducer).
6. A system according to claim 3, wherein:
At least one first transducer device is configured to emit in operation the acoustic detection wave, which is an ultrasonic wave, which propagates within the coating region and reaches the system die in a manner that is limited to the coating region; and
The monitoring system is configured to process in operation a signal detected from the received acoustic wave, the received acoustic wave being an ultrasonic wave that detects the presence of the defect.
7. The system of claim 6, wherein the detection of the presence of the defect is in real-time.
8. The system of claim 6, wherein in the presence of the defect, the characteristic of the acoustic detection wave is different with respect to the absence of the defect in terms of at least one of an amplitude of the signal and a corresponding temporal trend.
9. A system according to claim 3, wherein:
The monitoring system further includes a second monitoring die having at least one second transducer device configured to receive the respective received sound waves in operation, the second monitoring die being coupled to the support base and located within the coating region; and
The first system die is located between the first monitor die and the second monitor die along a propagation direction of the acoustic detection wave propagating within the coating region.
10. The system of claim 3, wherein the at least one first transducer device comprises:
a matrix of PMUT transducer elements configured to perform in operation at least one of: transmitting the acoustic detection wave and receiving the corresponding received acoustic wave; and
A respective ASIC circuit coupled to the matrix and integrated in the first monitor die, the respective ASIC circuit configured to perform in operation at least one of: driving the signal and processing the signal.
11. The system of claim 10, wherein the matrix and the ASIC circuit are coupled on opposite sides of a substrate, and the substrate has connection elements for electrically coupling the substrate to the support base.
12. The system of claim 3, further comprising an interface region between a first surface of the first monitor die and the coating region, the first surface of the first monitor die being opposite a second surface of the first monitor die, and the second surface of the first monitor die being coupled to the support base, and the interface region having an acoustic impedance matching function.
13. The system of claim 12, wherein the thickness of the interface region is defined as 1/4 of the wavelength of the acoustic detection wave, and the corresponding characteristic impedance Z 3 is calculated as: wherein Z 1 is the characteristic impedance of the coated region and Z 2 is the characteristic impedance associated with the at least one first transducer device.
14. A method, comprising:
monitoring for the occurrence of defects of an integrated electronic system provided with a package comprising a support base, a coating region on the support base, and at least one first system die coupled to the support base and in the coating region, the monitoring for the occurrence of defects of the integrated electronic system comprising:
the occurrence of defects in the coated area is determined by emitting a sound detection wave, whose characteristics are affected by the defects, and acquiring a corresponding received sound wave.
15. The method of claim 13, wherein the monitoring is performed in real-time.
16. The method of claim 13, wherein the defect comprises at least one of: layering at least partially separate from the coated region.
17. An apparatus, comprising:
A support base including a surface;
a monitoring system on the support pedestal including one or more monitoring dies coupled to the surface of the support pedestal;
a die coupled to the surface of the support pedestal; and
A coating area overlying the support base, the monitoring system, and the die, and
Wherein the monitoring system is configured to detect the occurrence of defects within the coating region in operation.
18. The apparatus of claim 17, wherein the one or more monitor dies comprise a first monitor die configured to emit, in operation, acoustic detection waves, characteristics of which are affected by the defect.
19. The apparatus of claim 18, wherein the one or more monitor dies comprise a second monitor die configured to receive respective received sound waves in operation.
20. The apparatus of claim 19, further comprising:
A first interface region between a first surface of the first monitor die facing away from the support base and the coating region; and
A second interface region between a second surface of the second monitor die facing away from the support base and the coating region.
CN202311372410.4A 2022-10-24 2023-10-23 System for monitoring defects in integrated system packages Pending CN117929523A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT102022000021900 2022-10-24
US18/489,737 US20240230596A9 (en) 2022-10-24 2023-10-18 System for monitoring defects within an integrated system package
US18/489,737 2023-10-18

Publications (1)

Publication Number Publication Date
CN117929523A true CN117929523A (en) 2024-04-26

Family

ID=90758247

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311372410.4A Pending CN117929523A (en) 2022-10-24 2023-10-23 System for monitoring defects in integrated system packages

Country Status (1)

Country Link
CN (1) CN117929523A (en)

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