CN117928758A - Temperature sensor circuit, thermometer and chip integrated with CMOS tube - Google Patents
Temperature sensor circuit, thermometer and chip integrated with CMOS tube Download PDFInfo
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Abstract
The invention provides a temperature sensor circuit, a thermometer and a chip of an integrated CMOS tube, wherein the circuit comprises: the first load tube and the second load tube are respectively connected with the power supply voltage; the operational amplifier is respectively connected with the first load tube and the second load tube to form a feedback loop and is used for clamping voltages corresponding to two input ends of the operational amplifier so as to enable the voltages of the two input ends to be the same; the first temperature sensing tube and the second temperature sensing tube are respectively connected with two input ends of the operational amplifier, so that the first temperature sensing tube and the second temperature sensing tube work in a subthreshold region, and temperature is sensed according to the current ratio between the first temperature sensing tube and the second temperature sensing tube. Through a novel low-power consumption temperature sensor circuit response temperature, simultaneously, the circuit itself is integrated by the MOS pipe, reduces the area of temperature sensor circuit effectively, has greatly improved the chip integrated level, compares Bipolar triode collection temperature, and through control temperature sensing pipe work in subthreshold district, even be in low voltage system also can the sensing temperature.
Description
Technical Field
The present invention relates to the field of integrated circuits, and in particular, to a temperature sensor circuit, a thermometer and a chip for an integrated CMOS transistor.
Background
In the related art, conventional temperature sensor circuits typically utilize a bandgap reference circuit (BGR), typically using the principle of a bipolartransistor, to generate a voltage (CTAT) having a positive temperature-dependent (PTAT) voltage and a negative temperature-dependent voltage. For example, in the existing PTAT current source on chip, a bandgap reference circuit is often adopted to generate, the current source is used as a current supply module of the whole system on chip, the function of the whole chip is affected, the existing PTAT current source mostly adopts a bandgap reference structure, and voltage drop generated by voltage difference of two diodes on the resistor on chip is utilized to generate a current in direct proportion to temperature, so that the problems of reliability, high cost and the like of the circuit are solved.
However, the temperature sensor circuit in this case generally needs a larger on-state current, so that the required power supply voltage of this type of temperature sensor is higher, and at the same time, the size of the BJT (bipolar transistor) is generally larger, which is unfavorable for chip integration, and increases the area of the chip.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a temperature sensor circuit, a thermometer and a chip integrated with a CMOS tube, which are used for solving the problems of the prior art that the current and voltage required by the temperature sensor circuit are high and the size is not suitable for being integrated on the chip.
To achieve the above and other related objects, a first aspect of the present invention provides a temperature sensor circuit of an integrated CMOS tube, comprising:
the first load tube and the second load tube are respectively connected with the power supply voltage;
The operational amplifier is respectively connected with the first load tube and the second load tube to form a feedback loop, and is used for clamping voltages corresponding to two input ends of the operational amplifier so as to enable the voltages of the two input ends to be the same;
The first temperature sensing tube and the second temperature sensing tube are respectively connected with two input ends of the operational amplifier, so that the first temperature sensing tube and the second temperature sensing tube work in a subthreshold region, and the temperature is sensed according to the current ratio between the first temperature sensing tube and the second temperature sensing tube; the first load tube, the second load tube, the first temperature sensing tube and the second temperature sensing tube are all field effect tubes.
In some embodiments of the present invention, sources of the first load tube and the second load tube are respectively connected to a power supply voltage, gates of the first load tube and the second load tube are respectively connected to an output end of the operational amplifier, and two input ends of the operational amplifier are correspondingly connected to a drain electrode of the first load tube and a drain electrode of the second load tube to form a feedback loop.
In some embodiments of the invention, the first load tube and the second load tube are PMOS tubes, and the first load tube and the second load tube are different in size.
In some embodiments of the invention, the temperature sensor circuit further comprises: and the detection and calibration module is used for detecting the output voltage of the output end of the operational amplifier, and if the output voltage exceeds a preset voltage interval, the voltage of the two input ends of the operational amplifier is regulated to calibrate the output voltage until the output voltage reaches the preset voltage interval.
In some embodiments of the invention, the first temperature sensing tube and the second temperature sensing tube are NMOS tubes.
In some embodiments of the present invention, the drain gate of the first temperature sensing tube and the drain gate of the second temperature sensing tube are respectively connected to two input ends of the operational amplifier; the sources of the first temperature sensing tube and the second temperature sensing tube are grounded.
In some embodiments of the invention, the first temperature sensing tube and the second temperature sensing tube are different in size.
In some embodiments of the present invention, the expression of the current ratio between the first temperature sensing tube and the second temperature sensing tube is:
Wherein I 1、I2 is the current of the first temperature sensing tube and the second temperature sensing tube, W 1,L1 is the width and the channel length of the first temperature sensing tube, W 2,L2 is the width and the channel length of the second temperature sensing tube, m is the slope factor of the subthreshold region, k is the boltzmann constant, a and b are constants, q is the electron charge amount, T 0 is the reference temperature, and T is the actual temperature.
In a second aspect, the present invention provides a thermometer comprising the temperature sensor circuit of the integrated CMOS tube described above.
In a third aspect, the present invention provides a chip comprising the above-described integrated CMOS tube temperature sensor circuit.
As described above, the temperature sensor circuit, thermometer and chip of the integrated CMOS tube of the present invention have the following beneficial effects:
the invention discloses a temperature sensor circuit integrated by a Metal Oxide Semiconductor (MOS) tube, which senses temperature through a novel low-power-consumption temperature sensor circuit structure.
Drawings
FIG. 1 is a circuit diagram of a temperature sensor integrated with a CMOS tube in accordance with the present invention;
FIG. 2 is another circuit diagram of the temperature sensor of the integrated CMOS tube of the present invention;
FIG. 3 is a diagram showing the structure of an AMP circuit in a temperature sensor circuit integrated with a CMOS tube according to the present invention;
FIG. 4 is a schematic diagram showing the temperature sensing result of the temperature sensor circuit integrated with the CMOS tube according to the present invention;
FIG. 5 is a diagram showing a simulation of the current of a temperature sensor circuit integrated with a CMOS tube in accordance with the present invention;
Fig. 6 is a diagram showing a simulation of the current ratio of the temperature sensor circuit integrated with the CMOS transistor in the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
Referring to fig. 1, a circuit diagram of a temperature sensor integrated with a CMOS transistor for monitoring an on-chip environment according to the present invention is shown in detail as follows:
a first load tube MP1 and a second load tube MP2 respectively connected with the power supply voltage VDD;
The operational amplifier AMP is respectively connected with the first load tube MP1 and the second load tube MP2 to form a feedback loop, and is used for clamping voltages corresponding to two input ends of the operational amplifier AMP so as to enable the voltages of the two input ends to be the same;
Specifically, the sources of the first load tube MP1 and the second load tube MP2 are respectively connected to the power supply voltage VDD, the gates of the first load tube MP1 and the second load tube MP2 are respectively connected to the output ends of the operational amplifier AMP as their gate voltages, the two input ends of the operational amplifier AMP are correspondingly connected to the drain electrode of the first load tube MP1 and the drain electrode of the second load tube MP2 to form a feedback loop, i.e., the positive input end is connected to the drain electrode of the first load tube MP1, and the negative input end is connected to the drain electrode of the second load tube MP 2.
Here, the feedback loop can clamp not only the voltages of the two input terminals so that the voltages of the two input terminals are the same, but also the voltage of the output terminal of the operational amplifier AMP, thereby stabilizing the voltages of the input terminal and the output terminal of the operational amplifier AMP.
The first temperature sensing tube MN1 and the second temperature sensing tube MN2 are respectively connected with two input ends of the operational amplifier AMP, so that the first temperature sensing tube MN1 and the second temperature sensing tube MN2 work in a subthreshold region, and the temperature is sensed according to the current ratio between the first temperature sensing tube MN1 and the second temperature sensing tube MN 2; the first load tube MP1, the second load tube MP2, the first temperature sensing tube MN1 and the second temperature sensing tube MN2 are all field effect tubes.
Specifically, the drain gate of the first temperature sensing tube MN1 and the drain gate of the second temperature sensing tube MN2 are respectively connected with two input ends of the operational amplifier AMP; the source electrode of the first temperature sensing tube MN1 and the source electrode of the second temperature sensing tube MN2 are grounded.
In this embodiment, the sources of the first load tube MP1 and the second load tube MP2 are connected to the VDD power supply as the load tube, and the two input ends (i.e., the two ends of the AB) of the operational amplifier AMP are clamped to obtain the same voltage at the two ends of the AB, the output ends of the operational amplifier AMP are connected to the gates of MP1 and MP2, and the two ends of the AB, MP1 and MP2 form a feedback loop to stabilize the voltage at the two points of the AB and the output voltage of the operational amplifier AMP. The grid electrodes and the drain electrodes of the MN1 tube (namely, the first temperature sensing tube) and the MN2 tube (namely, the second temperature sensing tube) are connected together to form a diode connection mode, so that the MN1 tube and the MN2 tube work in a subthreshold region to obtain a new temperature sensing mode.
Referring to fig. 2, another circuit diagram of a CMOS transistor-integrated temperature sensor according to the present invention is shown, which is different from the above embodiment, and includes:
The detection and calibration module is used for detecting the output voltage of the output end of the operational amplifier, and if the output voltage exceeds (is not in) a preset voltage interval, the voltage of the two input ends of the operational amplifier is adjusted to calibrate the output voltage until the output voltage reaches the preset voltage interval.
Specifically, by sampling the output voltage, determining whether the sampled output voltage is in a preset voltage interval, if not, if the output voltage is greater than the preset voltage interval, or if the output voltage is less than the preset voltage interval, respectively adjusting the voltages of two input ends of the operational amplifier, and calibrating the output voltage in real time until the output voltage reaches the preset voltage interval.
Referring to fig. 3, an AMP circuit structure diagram of a temperature sensor circuit integrated with a CMOS transistor includes: the PMOS tube M1, the PMOS tube M2, the NMOS tube M3, the NMOS tube M4 and the NMOS tube M5, wherein the source electrode of the PMOS tube M1 and the source electrode of the PMOS tube M2 are connected with power supply voltage, the grid electrode of the PMOS tube M1 and the grid electrode of the PMOS tube M2 are connected with each other, the drain electrode of the PMOS tube M1 and the drain electrode of the NMOS tube M3 are connected with the grid electrode of the PMOS tube M1 and the grid electrode of the PMOS tube M2, the drain electrode of the PMOS tube M2 and the drain electrode of the NMOS tube M4 are connected with each other, the source electrode of the NMOS tube M5 is grounded, the grid electrode of the NMOS tube M3 is connected with a positive input end, the grid electrode of the NMOS tube M4 is connected with a negative input end, and the grid electrode of the NMOS tube M5 is connected with reference voltage VB.
In this embodiment, the operational amplifier may amplify a weak input signal to a desired voltage level, and compare two input signals to generate an output signal indicating a difference between the two input signals.
Optionally, in some embodiments, the first load tube and the second load tube are PMOS tubes, and the first load tube and the second load tube are different in size.
In this embodiment, since the PMOS transistors with different sizes have different performance parameters, consideration needs to be given to the power supply voltage, the driving capability and the stability, and selection needs to be made according to the matching condition of the power supply voltage and the PMOS transistor, so as to ensure that the power supply voltage needs to be connected with the source electrode of the PMOS transistor as the load transistor, so that the situation of potential mismatch is avoided, and meanwhile, the driving capability and the stability of the circuit can be effectively improved.
Optionally, in some embodiments, the first temperature sensing tube and the second temperature sensing tube are NMOS tubes; the first temperature sensing tube and the second temperature sensing tube are different in size.
Specifically, the MN1 pipe and the MN2 pipe (the first temperature sensing pipe and the second temperature sensing pipe) operate in a subthreshold region as core temperature sensing pipes of the temperature sensor for sensing the on-chip temperature.
It should be noted that, according to the principle of virtual short input end of the operational amplifier, the voltages at the two points a and B of the input end of the operational amplifier are equal, and the sizes of the first temperature sensing tube MN1 and the second temperature sensing tube MN2 are different, so that the current sizes of the two branches are also different; meanwhile, the voltages of the two points AB are smaller than the threshold voltages of the first temperature sensing tube MN1 and the second temperature sensing tube MN 2.
The subthreshold region operating current formula is:
In the formula (1), C ox is a unit gate oxide capacitance, μ is carrier mobility, W, L are the width and channel length of the MOS transistor, m is a subthreshold region slope factor, V T =kt/q, a thermal voltage, k is boltzmann constant, V gs is a gate-source voltage difference of the MOS transistor, V th is a threshold voltage of the MOS transistor, and V ds is a drain-source voltage difference of the MOS transistor.
When V ds>3VT, the subthreshold region current formula may be omitted as:
meanwhile, the MN1 pipe and the MN2 pipe both work in the subthreshold region, and the MN1 pipe and the MN2 pipe are both in diode connection form and meet the condition of V ds>3VT, then the subthreshold region current I 1 of the MN1 pipe is:
Similarly, the subthreshold current I 2 flowing through the MN2 pipe is:
And (3) carrying out ratio processing on the formula (4) and the formula (3) to obtain the following formula:
wherein W and L are respectively adjustable constants, and meanwhile, since MN1 and MN2 adopt the same device, then m 1≈m2 =m, m is considered as a constant.
Wherein,
The voltage at the two points AB is equal based on the principle of virtual short across the input of the op amp, then V gs1＝Vgs2 is obtained. The following formula is further adjusted:
In order to make the I 2/I1 possess a PTAT relationship, the threshold voltage shows a better linearity in a certain temperature measurement range, let V th1-Vth2 =at+b, a and b be constants, T be an actual temperature, and aT t=t 0, T 0 be a reference temperature, performing taylor expansion on the exponential term of the formula (7), to obtain an expression of the current ratio between the first temperature sensing tube I 1 and the second temperature sensing tube I 2:
Wherein I 1、I2 is the current of the first temperature sensing tube and the second temperature sensing tube, W 1,L1 is the width and the channel length of the first temperature sensing tube, W 2,L2 is the width and the channel length of the second temperature sensing tube, m is the subthreshold region slope factor, k is boltzmann constant, a and b are constants, q is the electron charge amount, T 0 is the reference temperature, and T is the actual temperature.
In the embodiment, compared with other temperature measurement modes, the temperature test is performed on the chip circuit, a feedback loop is formed by adopting a single operational amplifier, and voltages corresponding to the clamping input end and the output end are more accurate compared with the solution of multiple operational amplifiers, the circuit is simpler, and the manufacturing cost is lower; the temperature measurement is carried out through the integrated CMOS tube, so that the volume is smaller, and the integration level is higher; meanwhile, the driving voltage is lower, large current is not needed to conduct, and the driving circuit is suitable for circuits or chips driven by lower voltage.
Referring to fig. 4, a schematic diagram of the temperature sensing result of the temperature sensor circuit integrated with the CMOS transistor according to the present invention is shown in detail below:
Under ideal conditions, according to temperature variables, the two currents are respectively in an exponential relationship, and the obtained currents are different in size due to the fact that the first temperature sensing tube and the second temperature sensing tube are different in size, and an inclined straight line is obtained after the currents are subjected to ratio, so that a sensed temperature value can be obtained.
Referring to fig. 5 in detail, a current simulation diagram of a temperature sensor circuit integrated with a CMOS transistor according to the present invention; referring to fig. 6 in detail, a simulation diagram of the current ratio of the temperature sensor circuit integrated with the CMOS transistor according to the present invention can be used to verify the correctness of fig. 4.
In a second aspect, the invention provides a thermometer comprising the above-described temperature sensor circuit integrated with a CMOS tube.
In a third aspect, the present invention provides a chip comprising the integrated CMOS tube temperature sensor circuit of any of the embodiments described above. The chip also comprises a processor and other functional circuits, the temperature sensor circuit of the integrated CMOS tube is connected with the processor, the processor controls the temperature sensor circuit to detect the temperature value, and the processing is controlled according to the temperature value reported by the temperature sensor circuit of the integrated CMOS tube.
In summary, the invention discloses a temperature sensor circuit integrated by a Metal Oxide Semiconductor (MOS) tube, which senses temperature through a novel low-power-consumption temperature sensor circuit structure, and because the circuit is integrated by the MOS tube, the area of the temperature sensor circuit is effectively reduced, the chip integration level is greatly improved, compared with the Bipolar triode mode for acquiring temperature, the temperature sensor circuit can sense temperature normally even in a low-voltage system by controlling the temperature sensing tube to work in a subthreshold region. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. A CMOS tube integrated temperature sensor circuit comprising:
the first load tube and the second load tube are respectively connected with the power supply voltage;
The operational amplifier is respectively connected with the first load tube and the second load tube to form a feedback loop, and is used for clamping voltages corresponding to two input ends of the operational amplifier so as to enable the voltages of the two input ends to be the same;
The first temperature sensing tube and the second temperature sensing tube are respectively connected with two input ends of the operational amplifier, so that the first temperature sensing tube and the second temperature sensing tube work in a subthreshold region, and the temperature is sensed according to the current ratio between the first temperature sensing tube and the second temperature sensing tube; the first load tube, the second load tube, the first temperature sensing tube and the second temperature sensing tube are all field effect tubes.
2. The integrated CMOS pipe temperature sensor circuit of claim 1 wherein the sources of the first and second load pipes are respectively connected to a supply voltage, the gates of the first and second load pipes are respectively connected to the output of the operational amplifier, and the two inputs of the operational amplifier are correspondingly connected to the drain of the first load pipe and the drain of the second load pipe to form a feedback loop.
3. The integrated CMOS pipe temperature sensor circuit of claim 2 wherein the first and second load pipes are PMOS pipes and the first and second load pipes are different in size.
4. The integrated CMOS pipe temperature sensor circuit of claim 1, further comprising: and the detection and calibration module is used for detecting the output voltage of the output end of the operational amplifier, and if the output voltage exceeds a preset voltage interval, the voltage of the two input ends of the operational amplifier is regulated to calibrate the output voltage until the output voltage reaches the preset voltage interval.
5. The integrated CMOS pipe temperature sensor circuit of claim 1 wherein the first and second temperature sensing pipes are NMOS pipes.
6. The integrated CMOS pipe temperature sensor circuit of claim 5 wherein the drain gate of the first temperature sensing pipe and the drain gate of the second temperature sensing pipe are connected to two inputs of the operational amplifier, respectively; the sources of the first temperature sensing tube and the second temperature sensing tube are grounded.
7. The integrated CMOS pipe temperature sensor circuit of claim 6 wherein the first temperature sensing pipe is a different size than the second temperature sensing pipe.
8. The integrated CMOS pipe temperature sensor circuit of claim 1, wherein the expression of the current ratio between the first temperature sensing pipe and the second temperature sensing pipe is:
Wherein I 1、I2 is the current of the first temperature sensing tube and the second temperature sensing tube, W 1,L1 is the width and the channel length of the first temperature sensing tube, W 2,L2 is the width and the channel length of the second temperature sensing tube, m is the slope factor of the subthreshold region, k is the boltzmann constant, a and b are constants, q is the electron charge amount, T 0 is the reference temperature, and T is the actual temperature.
9. A thermometer, characterized in that it comprises a temperature sensor circuit of an integrated CMOS tube as claimed in any one of claims 1 to 8.
10. A chip comprising the integrated CMOS tube temperature sensor circuit of any one of claims 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410033131.3A CN117928758A (en) | 2024-01-08 | 2024-01-08 | Temperature sensor circuit, thermometer and chip integrated with CMOS tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202410033131.3A CN117928758A (en) | 2024-01-08 | 2024-01-08 | Temperature sensor circuit, thermometer and chip integrated with CMOS tube |
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| CN117928758A true CN117928758A (en) | 2024-04-26 |
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