CN117926394A - Method for controlling oxygen content distribution in Czochralski method monocrystalline silicon - Google Patents
Method for controlling oxygen content distribution in Czochralski method monocrystalline silicon Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000001301 oxygen Substances 0.000 title claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 41
- 238000009826 distribution Methods 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 92
- 239000007788 liquid Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000005526 G1 to G0 transition Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention relates to a method for controlling oxygen content distribution in single crystal silicon by a Czochralski method, belonging to the technical field of single crystal silicon preparation. When the single crystal silicon grown by the Czochralski method enters the stable period of the constant diameter growth stage, the first adjustment, the second adjustment and the third adjustment are sequentially carried out along with the growth of the length of the constant diameter crystal of the single crystal silicon; the first adjusting includes adjusting the crucible rotation speed to a first speed > an initial speed of crucible rotation; the second adjusting comprises adjusting the rotation speed of the crucible to be a second speed and adjusting the furnace pressure to be a first pressure; the second speed is greater than the first speed, and the first pressure is greater than or equal to the initial furnace pressure; the third adjustment comprises the steps of adjusting the rotation speed of the crucible to be a third speed, adjusting the furnace pressure to be a second pressure and adjusting the distance of the liquid port to be a first distance; the initial speed is less than the third speed is less than the second speed, the second pressure is greater than the first pressure, and the first distance is greater than the initial distance of the liquid port. The invention realizes the effect that the oxygen content in the monocrystalline silicon is stably distributed in the axial direction of the crystal.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon preparation, in particular to a method for controlling oxygen content distribution in monocrystalline silicon by a Czochralski method.
Background
The method for growing monocrystalline silicon by the Czochralski method is a commonly used preparation method of semiconductor materials, has the advantages of high growth speed, high crystal quality, easy control and the like, and is widely applied in the semiconductor industry. It is used for manufacturing various semiconductor devices such as solar cells, integrated circuits, microprocessors, and the like.
In the process of growing single crystal silicon by the Czochralski method, a polycrystalline silicon feedstock is first placed into a quartz crucible and heated to about 1500℃ to melt. Then, the seed crystal is slowly lowered to the surface of the melt, and the temperature and the pulling speed are controlled to enable silicon atoms to be arranged on the seed crystal and gradually grow into monocrystalline silicon.
In order to obtain high quality single crystal silicon, many parameters such as melt temperature, seed temperature, pull rate, crucible rotation rate, etc. need to be controlled throughout the growth process. These parameters need to be precisely controlled to ensure that the silicon atoms are aligned in the correct crystal structure and to avoid defects and rejects. In the existing process of growing monocrystalline silicon by the Czochralski method, various process parameters are regulated and controlled in a consistent and stable manner, so that the distribution area of oxygen content in the crystal is in a monotonically increasing trend, and the method causes uncontrollable oxygen content interval in the prepared monocrystalline silicon product, so that the quality of the monocrystalline silicon is unstable.
Disclosure of Invention
First, the technical problem to be solved
In view of the above-mentioned shortcomings and disadvantages of the prior art, the present invention provides a method for controlling the distribution of oxygen content in silicon single crystal by Czochralski method, which can control the oxygen content of silicon single crystal in a narrow interval, realize the control of the oxygen content axial gradient, and ensure the stable quality of silicon single crystal.
(II) technical scheme
In order to achieve the above purpose, the main technical scheme adopted by the invention comprises the following steps:
In a first aspect, the present invention provides a method of controlling the oxygen content profile in single crystal silicon by the Czochralski method, comprising the steps of:
When the single crystal silicon grown by the Czochralski method enters a stable period of the constant diameter growth stage, sequentially performing first adjustment, second adjustment and third adjustment along with the growth of the length of the constant diameter crystal of the single crystal silicon;
the first adjusting includes adjusting a crucible rotation speed to a first speed; wherein the first speed is greater than an initial speed of rotation of the crucible;
The second adjustment comprises adjusting the rotation speed of the crucible to be a second speed and adjusting the furnace pressure to be a first pressure; wherein the second speed is greater than the first speed, and the first pressure is greater than or equal to the initial furnace pressure;
The third adjustment comprises the steps of adjusting the rotation speed of the crucible to be a third speed, adjusting the furnace pressure to be a second pressure and adjusting the distance of the liquid port to be a first distance; wherein, the initial speed is less than the third speed is less than the second speed, the second pressure is more than the first pressure, and the first distance is more than the initial distance of the liquid port.
Optionally, the first adjustment is made when the length of the isodiametric crystal is 300-320mm, said first speed being adjusted to 110-120% of the initial speed of rotation of the crucible.
Optionally, a second adjustment is made when the length of the isodiametric crystal is 500-520mm, said second speed being adjusted to 130-140% of the initial speed of rotation of the crucible.
Optionally, the second adjustment is performed when the length of the isodiametric crystal is 500-520mm, and the first pressure is adjusted to be 100-120% of the initial furnace pressure.
Optionally, a third adjustment is made when the length of the isodiametric crystal is 1500-1520mm, said third speed being adjusted to 115-125% of the initial speed of rotation of the crucible.
Optionally, the third adjustment is performed when the length of the isodiametric crystal is 1500-1520mm, and the second pressure is adjusted to 150-180% of the initial furnace pressure.
Optionally, when the length of the isodiametric crystal is 1500-1520mm, performing third adjustment, wherein the first distance is adjusted to 150-200% of the initial distance of the liquid port.
Optionally, at the stationary phase of the isodiametric growth stage, the length of the isodiametric crystal is more than or equal to 200mm.
Optionally, the initial speed of rotation of the crucible is 0.2-1rpm; the initial furnace pressure is 2-6KPa; the initial distance of the liquid port is 20-50mm.
Further, when the diameter of the isodiametric crystal is 200mm, the initial speed of rotation of the crucible is 0.5-1rpm; the initial furnace pressure is 3-6KPa; the initial distance of the liquid port is 20-40mm.
Further, when the diameter of the isodiametric crystal is 300mm, the initial speed of rotation of the crucible is 0.2-0.5rpm; the initial furnace pressure is 2-4KPa; the initial distance of the liquid port is 40-50mm.
In a second aspect, the present invention provides a stable oxygen content single crystal silicon produced by the above production method.
(III) beneficial effects
The beneficial effects of the invention are as follows:
The invention relates to a method for controlling oxygen content distribution in single crystal silicon by Czochralski method, which mainly controls the oxygen content in the single crystal silicon by adjusting at least one parameter of crucible rotation speed, furnace pressure and liquid port distance in the equal diameter growth stage of the single crystal silicon, so that the oxygen content distribution of the single crystal silicon product at different positions is stable, and the quality of the single crystal silicon product is improved.
The parameter control comprises the steps of sequentially performing a first adjustment, a second adjustment and a third adjustment when the single crystal silicon grown by the Czochralski method enters a stable period of an equal diameter stage.
The stationary phase of the isodiametric growth stage means that the length of the isodiametric crystal is more than or equal to 200mm after the crystal enters the isodiametric growth stage, namely the stationary phase of the isodiametric growth stage.
The first adjustment is to adjust the rotation speed of the crucible to 110-120% of the initial speed when the length of the isodiametric crystal reaches 300-320 mm. Since the oxygen concentration tends to decrease monotonically with the crystal growth direction, the forced convection intensity is increased in the early stage, the number of oxygen atoms introduced is increased, and the oxygen content concentration in the crystal is maintained at a high level.
The second adjustment is to adjust the rotation speed of the crucible to 130-140% of the initial speed when the length of the equal diameter crystal reaches 500-520mm, and the furnace pressure to 100-120% of the initial furnace pressure. Since forced convection cannot introduce more oxygen atoms, at this stage, by reducing the evaporation of SiO, the concentration of oxygen atoms in the silicon liquid is increased, reducing the tendency of oxygen concentration decrease due to segregation.
And the second adjustment is to adjust the crucible rotation to 115-125% of the initial speed when the length of the isodiametric crystal reaches 1500-1520mm, the furnace pressure to 150-180% of the initial furnace pressure, and the liquid port distance to 150-200% of the liquid port initial distance. In the final stage, the concentration of oxygen atoms is maintained by increasing the liquid gap.
Drawings
FIG. 1 is a graph showing the oxygen content distribution of single crystal silicon produced in example 1 and example 2 of the present invention.
Detailed Description
The invention will be better explained by the following detailed description of the embodiments with reference to the drawings.
In order that the above-described aspects may be better understood, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Example 1
The embodiment provides a method for growing monocrystalline silicon by a Czochralski method, which comprises the following steps:
S1, placing high-purity polycrystalline silicon into a quartz crucible with an outer diameter of 24 inches, vacuumizing a monocrystalline silicon furnace, enabling the pressure value to reach 1.0Pa in three minutes, and setting the initial furnace pressure to be 6KPa. Starting heating at a heating rate of 350 ℃/hr to melt the polysilicon, and keeping stable output when the temperature reaches 1600 ℃ to melt the polysilicon in the quartz crucible; after the polysilicon is completely melted, the temperature is reduced to 1420 ℃ at a rate of 25 ℃/hr.
S2, immersing the seed crystal into the silicon solution after the temperature of the silicon solution is stable, setting the initial speed of crucible rotation to be 1rpm and the initial distance of a liquid port to be 20mm, and pulling the seed crystal at a speed of 1.5mm/min to form a small-diameter section with a diameter of 5mm and a length of 200 mm;
S3, reducing the pulling speed to 0.7mm/min, slowly lifting the crucible position, after the diameter of the crucible is grown to 200mm, lifting the pulling speed to 1.8mm/min, entering into an equal diameter state, lifting the lifting speed of the crucible to 0.1mm/min, cooling at a speed of 5 ℃/hr, and entering into an equal diameter growth stage. When the length of the isodiametric crystal is 200mm, the crystal enters a stable period.
S4, setting the rotation speed of the crucible to 110% of the initial speed when the length of the isodiametric crystal is 300 mm.
S5, when the length of the isodiametric crystal is 500mm, the rotation speed of the crucible is set to 130% of the initial speed, and the furnace pressure is set to 100% of the initial furnace pressure.
S6, when the length of the isodiametric crystal is 1500mm, the rotation speed of the crucible is set to 115% of the initial speed, the furnace pressure is set to 150% of the initial furnace pressure, and the liquid port distance is set to 150% of the initial liquid port distance.
S7, ending after the set length is reached, maintaining the pressure value in the furnace to be 4kPa, setting the argon flow to be 150slpm, and setting: the crystal is turned to 10rpm, the rotation speed of the crucible is 4rpm, the growth speed of the crystal is controlled to be 1.0mm/min, the rising speed of the crucible is controlled to be 1.0mm/min, the growth time of the crystal is 130min, the growth length of the crystal is L=10mm, the ending of the crystal is completed, and the crystal is separated from the liquid level.
S8, slowly reducing the temperature in the furnace, wherein the speed is reduced to 19 ℃/min; until the furnace temperature is reduced to 850 ℃, the furnace is placed for 12 hours, and the crystal is taken out.
Example 2
The embodiment provides a method for growing monocrystalline silicon by a Czochralski method, which comprises the following steps:
S1, placing high-purity polycrystalline silicon into a quartz crucible with the outer diameter of 28 inches, vacuumizing a monocrystalline silicon furnace, enabling the pressure value to reach 1.0Pa in three minutes, and setting the initial furnace pressure to be 3KPa. Starting heating at a heating rate of 350 ℃/hr to melt the polysilicon, and keeping stable output when the temperature reaches 1600 ℃ to melt the polysilicon in the quartz crucible; after the polysilicon is completely melted, the temperature is reduced to 1420 ℃ at a rate of 25 ℃/hr.
S2, immersing the seed crystal into the silicon solution after the temperature of the silicon solution is stable, setting the initial speed of crucible rotation to be 0.5rpm, setting the initial distance of a liquid port to be 40mm, and pulling the seed crystal at a speed of 1.5mm/min to form a small-diameter section with a diameter of 5mm and a length of 200 mm;
S3, reducing the pulling speed to 0.7mm/min, slowly lifting the crucible position, after the diameter of the crucible is grown to 200mm, lifting the pulling speed to 1.8mm/min, entering into an equal diameter state, lifting the lifting speed of the crucible to 0.1mm/min, cooling at a speed of 5 ℃/hr, and entering into an equal diameter growth stage. When the length of the isodiametric crystal is 200mm, the crystal enters a stable period.
S4, setting the rotation speed of the crucible to 120% of the initial speed when the length of the isodiametric crystal is 300 mm.
S5, when the length of the isodiametric crystal is 500mm, the rotation speed of the crucible is set to 140% of the initial speed, and the furnace pressure is set to 120% of the initial furnace pressure.
S6, when the length of the isodiametric crystal is 1500mm, the rotation speed of the crucible is set to 125% of the initial speed, the furnace pressure is set to 180% of the initial furnace pressure, and the liquid port distance is set to 200% of the initial liquid port distance.
S7, ending after the set length is reached, maintaining the pressure value in the furnace to be 4kPa, setting the argon flow to be 150slpm, and setting: the crystal is turned to 10rpm, the rotation speed of the crucible is 4rpm, the growth speed of the crystal is controlled to be 1.0mm/min, the rising speed of the crucible is controlled to be 1.0mm/min, the growth time of the crystal is 130min, the growth length of the crystal is L=10mm, the ending of the crystal is completed, and the crystal is separated from the liquid level.
S8, slowly reducing the temperature in the furnace, wherein the speed is reduced to 19 ℃/min; until the furnace temperature is reduced to 850 ℃, the furnace is placed for 12 hours, and the crystal is taken out.
Example 3
The embodiment provides a method for growing monocrystalline silicon by a Czochralski method, which comprises the following steps:
S1, placing high-purity polycrystalline silicon into a quartz crucible with an outer diameter of 32 inches, vacuumizing a monocrystalline silicon furnace, enabling the pressure value to reach 1.0Pa in three minutes, and setting the initial furnace pressure to be 4KPa. Starting heating at a heating rate of 350 ℃/hr to melt the polysilicon, and keeping stable output when the temperature reaches 1600 ℃ to melt the polysilicon in the quartz crucible; after the polysilicon is completely melted, the temperature is reduced to 1420 ℃ at a rate of 25 ℃/hr.
S2, immersing the seed crystal into the silicon solution after the temperature of the silicon solution is stable, setting the initial speed of crucible rotation to be 0.2rpm, setting the initial distance of a liquid port to be 45mm, and pulling the seed crystal at a speed of 1.5mm/min to form a small-diameter section with a diameter of 5mm and a length of 200 mm;
S3, reducing the pulling speed to 0.7mm/min, slowly lifting the crucible position, after the diameter of the crucible is grown to 300mm, lifting the pulling speed to 1.8mm/min, entering into an equal diameter state, lifting the lifting speed of the crucible to 0.1mm/min, cooling at a speed of 5 ℃/hr, and entering into an equal diameter growth stage. When the length of the isodiametric crystal is 200mm, the crystal enters a stable period.
S4, setting the rotation speed of the crucible to 115% of the initial speed when the length of the isodiametric crystal is 300 mm.
S5, when the length of the isodiametric crystal is 500mm, the rotation speed of the crucible is set to 130% of the initial speed, and the furnace pressure is set to 115% of the initial furnace pressure.
S6, when the length of the isodiametric crystal is 1500mm, the rotation speed of the crucible is set to 115% of the initial speed, the furnace pressure is set to 170% of the initial furnace pressure, and the liquid port distance is set to 180% of the liquid port initial distance.
S7, ending after the set length is reached, maintaining the pressure value in the furnace to be 4kPa, setting the argon flow to be 150slpm, and setting: the crystal is turned to 10rpm, the rotation speed of the crucible is 4rpm, the growth speed of the crystal is controlled to be 1.0mm/min, the rising speed of the crucible is controlled to be 1.0mm/min, the growth time of the crystal is 130min, the growth length of the crystal is L=10mm, the ending of the crystal is completed, and the crystal is separated from the liquid level.
S8, slowly reducing the temperature in the furnace, wherein the speed is reduced to 19 ℃/min; until the furnace temperature is reduced to 850 ℃, the furnace is placed for 12 hours, and the crystal is taken out.
Comparative example 1
This comparative example provides a method for growing single crystal silicon by Czochralski method, which differs from example 1 only in that the crucible rotation speed, furnace pressure and liquid port distance are not changed as the length of the isodiametric crystal increases after entering the stationary phase.
Comparative example 2
This comparative example provides a method for growing single crystal silicon by Czochralski method, which differs from example 1 only in that steps S1 to S3 of this comparative example are the same as example 1, and step S4 is: when the length of the isodiametric crystal is 300mm, the crucible rotation speed is set to 115% of the initial speed. Then the ending and annealing of steps S7 and S8 are directly performed.
Comparative example 3
This comparative example provides a method for growing single crystal silicon by Czochralski method, which differs from example 1 only in that steps S1 to S3 of this comparative example are the same as example 1, and step S4 is: when the length of the isodiametric crystal is 500mm, the crucible rotation speed is set to 130% of the initial speed, and the furnace pressure is set to 100% of the initial furnace pressure. Then the ending and annealing of steps S7 and S8 are directly performed.
The oxygen content of the monocrystalline silicon prepared in the examples 1-3 and the comparative examples 1-3 at different length positions is tested, 2mm sample pieces are cut at the corresponding positions of the crystal, infrared spectrum analysis is carried out on the sample pieces, the corresponding oxygen content concentration is obtained, the statistical result is shown in figure 1, and the result shows that the stable distribution of the oxygen content in the axial direction of the crystal can be realized by the method of the invention. According to the distribution rule of the oxygen content in the crystal, the invention can control the distribution of the oxygen content of the crystal in a targeted way through process change at different positions and amplitude adjustment. In comparative example 1, since the rotation speed of the crucible, the furnace pressure and the gap distance were not changed after entering the constant diameter, the oxygen content therein was gradually decreased as the length of the silicon rod was increased. Comparative example 2 also has the same tendency as comparative example 1 in that although comparative example 2 changes the rotation speed of the crucible at a constant diameter crystal length of 300mm, the oxygen content in the silicon rod is briefly increased, but since forced convection does not introduce more oxygen atoms at the later stage of growth of the single crystal silicon, the oxygen content is decreased and is well below the lower limit value as the single crystal silicon grows. In comparative example 3, in the initial growth stage of the isodiametric crystal, the oxygen content in the crystal was insufficient because the rotation speed of the crucible was not increased. When the length of the isodiametric crystal is 500mm, the rotation speed of the crucible is adjusted, and the oxygen content in the crystal is increased, but the oxygen content in the crystal is reduced in the later stage and is far below the lower limit value.
In the process of growing monocrystalline silicon by the Czochralski method, different parameters are adjusted at different length stages of the diameter crystal, so that the effect of controlling the stable distribution of the oxygen contents of different lengths of the monocrystalline silicon in a narrower interval is achieved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A method for controlling the oxygen content profile in single crystal silicon by the czochralski method, comprising the steps of:
When the single crystal silicon grown by the Czochralski method enters a stable period of the constant diameter growth stage, sequentially performing first adjustment, second adjustment and third adjustment along with the growth of the length of the constant diameter crystal of the single crystal silicon;
the first adjusting includes adjusting a crucible rotation speed to a first speed; wherein the first speed is greater than an initial speed of rotation of the crucible;
The second adjustment comprises adjusting the rotation speed of the crucible to be a second speed and adjusting the furnace pressure to be a first pressure; wherein the second speed is greater than the first speed, and the first pressure is greater than or equal to the initial furnace pressure;
The third adjustment comprises the steps of adjusting the rotation speed of the crucible to be a third speed, adjusting the furnace pressure to be a second pressure and adjusting the distance of the liquid port to be a first distance; wherein, the initial speed is less than the third speed is less than the second speed, the second pressure is more than the first pressure, and the first distance is more than the initial distance of the liquid port.
2. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the first adjustment is performed when the length of the isodiametric crystal is 300 to 320mm, the first speed being adjusted to 110 to 120% of the initial speed of rotation of the crucible.
3. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the second adjustment is performed when the length of the isodiametric crystal is 500 to 520mm, the second speed being adjusted to 130 to 140% of the initial speed of rotation of the crucible.
4. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the second adjustment is performed when the length of the isodiametric crystal is 500 to 520mm, and the first pressure is adjusted to 100 to 120% of the initial furnace pressure.
5. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the third adjustment is performed when the length of the isodiametric crystal is 1500 to 1520mm, the third speed being adjusted to 115 to 125% of the initial speed of rotation of the crucible.
6. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the third adjustment is performed when the length of the isodiametric crystal is 1500 to 1520mm, and the second pressure is adjusted to 150 to 180% of the initial furnace pressure.
7. The method for controlling oxygen content distribution in single crystal silicon according to claim 1 or 6, wherein the third adjustment is performed when the length of the isodiametric crystal is 1500-1520mm, and the first distance is adjusted to 150-200% of the initial distance of the liquid port.
8. The method for controlling oxygen content distribution in a silicon single crystal according to claim 1, wherein the length of the isodiametric crystal is not less than 200mm at the stationary phase of the isodiametric growth stage.
9. The method for controlling oxygen content distribution in single crystal silicon by Czochralski method according to claim 1, wherein the initial speed of rotation of the crucible is 0.2 to 1rpm; the initial furnace pressure is 2-6KPa; the initial distance of the liquid port is 20-50mm.
10. A stable oxygen content single crystal silicon produced by the production method according to any one of claims 1 to 9.
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