CN117915723A - Display panel, detection circuit and display device - Google Patents
Display panel, detection circuit and display device Download PDFInfo
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- CN117915723A CN117915723A CN202410015610.2A CN202410015610A CN117915723A CN 117915723 A CN117915723 A CN 117915723A CN 202410015610 A CN202410015610 A CN 202410015610A CN 117915723 A CN117915723 A CN 117915723A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- G—PHYSICS
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
- G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
The application discloses a display panel, a detection circuit and a display device. The display panel includes a substrate, a driving device layer, and a light emitting device layer; the driving device layer is arranged on one side of the substrate and comprises an infrared sensing unit; the light-emitting device layer is arranged on one side of the driving device layer, which is away from the substrate, and comprises an infrared light-emitting unit; the infrared sensing unit comprises a first active part, and the first active part is used for at least sensing infrared light reflected by the infrared light emitting unit. By integrating the infrared sensing unit in the driving device layer, the structure is simplified, the space is saved, the integration level of the display device is improved, and the light and thin design of the display device is convenient to realize.
Description
Technical Field
The application belongs to the technical field of display, and particularly relates to a display panel, a detection circuit and a display device.
Background
In recent years, the demands for the intelligence and versatility of display devices have been increasing. The infrared sensing unit can measure distance through infrared rays, for example, when a user uses a mobile phone to answer a phone or puts the mobile phone into a pocket, the proximity sensor can judge that the mobile phone is close to the face or the body of the user and turns off the touch function of the screen, and therefore misoperation can be prevented.
At present, an infrared sensing unit is added in a display device, so that the occupied space is large. How to improve the integration level of the display device and realize the light and thin design of the display device is a problem to be solved.
Disclosure of Invention
The application aims to provide a display panel, a detection circuit and a display device, and aims to solve the problem of low integration level of the existing display device.
The first aspect of the present application provides a display panel including a substrate, a driving device layer, and a light emitting device layer; the driving device layer is arranged on one side of the substrate and comprises an infrared sensing unit; the light-emitting device layer is arranged on one side of the driving device layer, which is away from the substrate, and comprises an infrared light-emitting unit; the infrared sensing unit comprises a first active part, and the first active part is used for at least sensing infrared light reflected by the infrared light emitting unit.
In some embodiments, the display panel further includes a filter layer disposed on a side of the light emitting device layer away from the substrate, the filter layer including a filter portion located above the infrared sensing unit, an orthographic projection of the infrared sensing unit on the substrate being located within an orthographic projection range of the filter portion on the substrate;
Preferably, the infrared sensing unit includes a first gate electrode covering a part of the first active portion, and a first electrode and a second electrode connected to the first active portion, respectively, wherein a front projection of the first gate electrode on the substrate is located in a front projection range of the first active portion on the substrate, the first active portion uncovered by the first gate electrode is used for sensing infrared light, and a photocurrent is formed between the first electrode and the second electrode;
preferably, the infrared sensing unit is a gap type amorphous silicon thin film transistor;
preferably, the photosensitive material of the first active portion includes amorphous silicon;
preferably, the photosensitive material of the first active portion includes hydrogenated amorphous silicon.
In some embodiments, an infrared driving transistor for driving the infrared light emitting unit to emit light is further disposed in the driving device layer; the infrared driving transistor comprises a second grid electrode, a second active part, a third electrode and a fourth electrode which are respectively connected with the second active part, and one of the third electrode and the fourth electrode is connected with the infrared light emitting unit;
Preferably, the first active portion and the second active portion are arranged in the same layer;
Preferably, the first electrode and the second electrode are arranged on the same layer;
preferably, the first electrode, the second electrode, the third electrode and the fourth electrode are arranged in the same layer.
In some embodiments, the display panel further includes a pixel defining layer including a first pixel opening, the infrared light emitting unit being located within the first pixel opening;
preferably, the pixel defining layer further includes a first light shielding portion disposed on a peripheral side of the first pixel opening;
Preferably, the pixel defining layer further includes a first light-transmitting portion, the first light-transmitting portion is disposed above the infrared sensing unit, and the orthographic projection of the infrared sensing unit on the substrate is located in the orthographic projection range of the first light-transmitting portion on the substrate;
preferably, the pixel defining layer further includes a second pixel opening, and a subpixel is disposed in the second pixel opening; the driving device layer is also provided with a pixel driving transistor for driving the sub-pixel to emit light, and the active part of the pixel driving transistor and the first active part are arranged on the same layer.
Preferably, the display panel further includes a first power line, the first electrode of the infrared sensing unit and the first electrode of the pixel driving transistor are electrically connected to the first power line;
preferably, the display panel further includes a second power line, and the second electrode of the infrared sensing unit and the second electrode of the sub-pixel are electrically connected to the second power line.
In some embodiments, the filter layer further includes a second light shielding portion and a second light transmitting portion; the second light-transmitting part is arranged above the first pixel opening, the second light-shielding part is arranged above the first light-shielding part, the orthographic projection of the first light-shielding part on the substrate is at least partially overlapped with the orthographic projection of the second light-shielding part on the substrate, and the orthographic projection of the first light-transmitting part on the substrate is larger than the orthographic projection of the second light-transmitting part on the substrate;
Preferably, the filter layer further comprises a third light shielding part and a third light transmission part, the third light transmission part is arranged above the second pixel opening, the orthographic projection of the third light shielding part on the substrate is positioned at the orthographic projection peripheral side of the second pixel opening on the substrate, and the orthographic projection of the second pixel opening on the substrate is positioned in the orthographic projection range of the third light transmission part on the substrate;
Preferably, the display panel further comprises an encapsulation layer, the encapsulation layer is arranged on one side, away from the substrate, of the light-emitting device layer, and the light filtering layer is arranged on one side, away from the substrate, of the encapsulation layer.
The first aspect of the present application also provides a display panel, the display panel including an induction display area, the induction display area including a first display area and a second display area, the first display area being disposed on at least one side of the second display area; the first display area and the second display area both comprise infrared sensing units; the first display area further comprises an infrared light-emitting unit positioned at one side of the infrared sensing unit; the infrared sensing unit comprises a first active part for sensing infrared light intensity;
Preferably, the first display area comprises a plurality of first sensor sub-areas which are arranged at intervals, each first sensor sub-area is formed by at least one sub-pixel, an infrared light emitting unit and an infrared sensing unit, and the at least one sub-pixel and the infrared light emitting unit are distributed on the periphery of the infrared sensing unit;
preferably, the second display area comprises a plurality of second sensor sub-areas arranged at intervals, each second sensor sub-area is formed by at least one sub-pixel and an infrared sensing unit, and at least one sub-pixel is located beside the infrared sensing unit;
Preferably, the sensing display area further comprises a plurality of third sensing sub-areas arranged at intervals, each third sensing sub-area is formed by at least one sub-pixel and a fingerprint detection unit, and at least one sub-pixel is located beside the fingerprint detection unit;
Preferably, the second inductor zone is arranged at a side of the third inductor zone remote from the first inductor zone;
Preferably, the fingerprint detection unit comprises a third active part for sensing light intensity;
preferably, the third active portion and the first active portion are located in the same layer, and the fingerprint detection unit further includes a third gate located on the third active portion, the third gate covering a portion of the third active portion;
Preferably, the fingerprint detection unit is a gap type amorphous silicon thin film transistor.
The second aspect of the application provides a detection circuit, which comprises an induction circuit, wherein the induction circuit comprises an infrared induction unit, a first power line, a second power line and a sensing output module; the infrared sensing unit comprises a first active part for receiving infrared light, and a first electrode and a second electrode of the infrared sensing unit are respectively and electrically connected with a first power line and a second power line; the sensing output module is connected with the first electrode of the infrared sensing unit and is used for responding to the acquisition driving signal to output the induction current of the infrared sensing unit.
In some embodiments, the sensing output module comprises a scanning control unit, a scanning signal line and an induction data line which are respectively connected with the scanning control unit, wherein the scanning control unit is connected with a first electrode of the infrared induction unit;
Preferably, the scan control unit includes a scan control transistor, a first electrode of the scan control transistor is connected with a first electrode of the infrared sensing unit, a second electrode of the scan control transistor is connected with the sensing data line, and a gate of the scan control transistor is connected with the scan signal line for receiving the acquisition driving signal transmitted by the scan signal line.
In some embodiments, the sensing circuit further includes a source follower module, the source follower module is connected to the scan control unit and the second power line of the display panel, the source follower module is further connected to the first electrode of the infrared sensing unit, and the source follower module is used for amplifying and outputting the sensing current of the infrared sensing unit;
preferably, the source follower module comprises a source follower transistor, a first electrode of the source follower transistor is connected with the second power line, a second electrode of the source follower transistor is connected with the scanning control unit, and a grid electrode of the source follower transistor is connected with the first electrode of the infrared sensing unit;
Preferably, the infrared sensing unit further comprises a reset module, wherein the reset module is connected between the second power line and the first electrode of the infrared sensing unit and is used for resetting the voltage of the first electrode of the infrared sensing unit;
Preferably, the reset module comprises a reset transistor, a first pole of the reset transistor is connected with the second power line, a second pole of the reset transistor is connected with the first electrode of the infrared sensing unit, and a grid electrode of the reset transistor is connected with the reset signal line and used for receiving a reset signal transmitted by the reset signal line.
Preferably, the detection circuit further comprises a pixel driving circuit, the pixel driving circuit comprises a light emitting unit and a pixel driving module connected with the light emitting unit, the pixel driving module is connected with a first power line, and the infrared light emitting unit is connected with a second power line;
The light emitting unit includes an infrared light emitting unit or a sub-pixel.
A third aspect of the present application provides a display device including the display panel of any one of the above embodiments, or a detection circuit including the display panel of any one of the above embodiments.
The infrared light emitting unit of the display panel of the embodiment of the application can emit infrared light, or the infrared light emitting unit emits visible light and then converts the visible light into infrared light. The first active part of the infrared sensing unit can receive infrared light reflected by the sensing human body and convert the optical signal into an electric signal, so that a short-distance detection function is realized. By integrating the infrared sensing unit in the driving device layer, the structure is simplified, the space is saved, the integration level of the display device is improved, and the light and thin design of the display device is convenient to realize.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
Fig. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the application;
FIG. 2 is a schematic cross-sectional view of a display panel according to an embodiment of the application;
FIG. 3 is a top view of a display panel according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of a display panel according to an embodiment of the application;
FIG. 5 is a schematic diagram of a detection circuit according to an embodiment of the present application;
fig. 6 is another schematic diagram of a detection circuit according to an embodiment of the present application.
The reference numerals are as follows:
A display panel 100; a substrate 10; a light emitting device layer 20; an infrared light emitting unit 211; an anode 22; a cathode 24; an infrared light emitting structure 23; a sub-pixel 25; a driving device layer 30; scanning signal lines SC; sensing a data line RO; a reset signal line RST; an infrared sensing unit 31; a first active portion 311; a first electrode 312; a second electrode 313; a first gate 314; a gate insulating layer 321; an inter-insulating layer 322; a planarization layer 33; an infrared driving transistor M1; a second gate 341; a second active portion 342; a third electrode 343; a fourth electrode 344; a pixel driving transistor 35; a buffer layer 40; a pixel definition layer 50; a first pixel opening 51; a first light shielding portion 52; a first light-transmitting portion 53; a second pixel opening 54; a first power supply line S1; a second power supply line S2; a fingerprint detection unit T1; an encapsulation layer 60; a filter layer 80; a filter section 81; a second light shielding portion 82; a second light transmitting portion 83; a third light shielding portion 84; a third light-transmitting portion 85; a first display area Z1; a second display area Z2; a first sensor sub-zone Z11; a second sensor sub-zone Z21; a third sensor sub-zone Z31; a fingerprint detection unit T1; a third active portion 61; a third gate 62; a sensing output module N1; a scan control unit N11; a scan control transistor T3; a source follower unit N4; a source follower transistor T4; a reset module N3; and a reset transistor T2.
Detailed Description
Embodiments of the present application are described in further detail below with reference to the accompanying drawings and examples. The following detailed description of the embodiments and the accompanying drawings are provided to illustrate the principles of the application and are not intended to limit the scope of the application, i.e., the application is not limited to the embodiments described.
In the description of the present application, it is to be noted that, unless otherwise indicated, the meaning of "plurality" is two or more; the terms "upper," "lower," "left," "right," "inner," "outer," and the like are merely used for convenience in describing the present application and to simplify the description, and do not denote or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The "vertical" is not strictly vertical but is within the allowable error range. "parallel" is not strictly parallel but is within the tolerance of the error.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the described embodiments of the application may be combined with other embodiments.
The directional terms appearing in the following description are those directions shown in the drawings and do not limit the specific structure of the application. In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present application can be understood as appropriate by those of ordinary skill in the art.
The infrared sensing units such as the proximity sensor can measure distance through infrared rays, for example, when a user uses a mobile phone to answer a phone or puts the mobile phone into a pocket, the proximity sensor can judge that the mobile phone is close to the face or the body of the user and turns off the touch function of the screen, and therefore misoperation can be prevented. At present, the infrared sensing unit is generally arranged under the screen of the display panel as an independent module, light generated by the infrared emitter can influence the driving transistor, display faults are easy to be caused, and the mode of adding the infrared sensing unit in the display device occupies large space. How to improve the integration level of the display device and realize the light and thin design of the display device is a problem to be solved.
In order to solve the above problems, embodiments of the present application provide a display panel, a detection circuit and a display device, and embodiments of the display panel and the display device are described below with reference to the accompanying drawings.
Embodiments of the present application provide a display panel, which may be an Organic LIGHT EMITTING Diode (OLED) display panel, and may also be other types of display panels, such as a Micro LIGHT EMITTING Diode (Micro-LED) or a Quantum LIGHT EMITTING Diode (QLED) display panel.
As shown in fig. 1, a first aspect of the present application provides a display panel 100 including a substrate 10, a driving device layer 30, and a light emitting device layer 20; the driving device layer 30 is disposed at one side of the substrate 10, and the driving device layer 30 includes an infrared sensing unit 31; the light emitting device layer 20 is disposed on a side of the driving device layer 30 facing away from the substrate 10, and the light emitting device layer 20 includes an infrared light emitting unit 211, wherein the infrared sensing unit 31 includes a first active portion 311, and the first active portion 311 is configured to sense at least infrared light reflected by the infrared light emitting unit 211.
The substrate 10 may be a rigid substrate 10 made of glass or plastic, or a flexible substrate 10 made of Polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC), cellulose Acetate Propionate (CAP), or the like. A buffer layer 40 may be disposed on the substrate 10, and the driving device layer 30 is disposed on the buffer layer 40.
The infrared light emitting unit 211 is configured to emit infrared light or light emitted from the infrared light emitting unit 211 can be converted into infrared light, and the first active portion 311 is configured to sense the intensity of the infrared light. The infrared light emitting unit 211 may include an anode 22, an infrared light emitting structure 23, and a cathode 24, which are stacked. The infrared light emitting structure 23 may be formed by stacking various film layer structures, and illustratively, the infrared light emitting structure 23 may include a hole injection layer (Hole Inject Layer, HIL), a hole transport layer (Hole Transport Layer, HTL), an infrared light emitting layer, an electron injection layer (Electron Inject Layer, EIL), and an electron transport layer (Electron Transport Layer, ETL) that are stacked. The infrared light emitting structure 23 can emit infrared light or light emitted from the infrared light emitting structure 23 can be converted into infrared light under the driving of the pixel driving circuit. The infrared light emitting structure 23 serves as a transmitting end of the proximity sensor, and the infrared sensing unit 31 serves as a receiving end of the proximity sensor. The first active portion 311 includes a photosensitive material, and the photosensitive material of the first active portion 311 may be silicon, a gallium compound, indium antimonide, gallium nitride, indium selenide, or the like. When the light of the infrared light emitting unit 211 is irradiated to the human body, the thus-formed reflected light reaches the photosensitive material of the first active portion 311 of the infrared sensing unit 31. The infrared light emitted by the infrared light emitting structure 23 is reflected to the infrared sensing unit 31 by the human body, and the infrared sensing unit 31 generates a corresponding electric signal according to the distance between the human body and the human body, and transmits the electric signal to the processing chip of the display device. Specifically, when the human body is sufficiently close to the display device, the infrared light emitting unit 211 emits light pulses that are reflected by the human body to be received by the infrared sensing unit 31. A critical threshold may be set to define proximity, indicating that the human body is sufficiently close when the acquired signal is greater than a critical upper limit; when the acquired data is smaller than the critical lower limit value, the human body is far away.
The infrared light emitting unit 211 of the display panel 100 of the embodiment of the present application can emit infrared light, or the infrared light emitting unit 211 emits visible light and then converts it into infrared light. The first active portion 311 of the infrared sensing unit 31 can receive infrared light reflected by the sensing human body, and convert the optical signal into an electrical signal, thereby realizing a close range detection function. By integrating the infrared sensing unit 31 in the driving device layer 30, the structure is simplified, the space is saved, the integration level of the display device is improved, and the light and thin design of the display device is facilitated. And moreover, the infrared sensing unit 31 is integrated on the driving device layer 30, so that the screen duty ratio can be improved, the under-screen attenuation is avoided, the detection sensitivity and accuracy are improved, and the illumination influence of the infrared emitter on the back side of the driving device layer 30 is avoided, so that the abnormal display problem is not influenced.
In some embodiments, the display panel 100 further includes a filter layer 80 disposed on a side of the light emitting device layer 20 remote from the substrate 10, the filter layer 80 including a filter portion 81 located above the infrared sensing unit 31, and an orthographic projection of the infrared sensing unit 31 on the substrate 10 is located within an orthographic projection range of the filter portion 81 on the substrate 10.
The filter 81 is located directly above the infrared sensing unit 31, and the filter 81 can transmit only infrared light and absorb light of other wavelengths, thereby improving the detection sensitivity of the infrared sensing unit 31.
In some embodiments, the infrared sensing unit 31 includes a first gate electrode 314 covering a portion of the first active portion 311, and a first electrode 312 and a second electrode 313 connected to the first active portion 311, respectively, where a front projection of the first gate electrode 314 on the substrate 10 is located within a front projection range of the first active portion 311 on the substrate 10, the first active portion 311 not covered by the first gate electrode 314 is used to sense infrared light, and a photocurrent is formed between the first electrode 312 and the second electrode 313.
The driving device layer 30 may further include a gate insulating layer 321, an inter insulating layer 322, and a planarization layer 33. Specifically, the first active portion 311 may be disposed on a side of the buffer layer 40 facing away from the substrate 10, and the gate insulating layer 321 is disposed on the buffer layer 40 and covers the first active portion 311. The first gate electrode 314 is disposed on a side of the gate insulating layer 321 facing away from the substrate 10, and the inter-insulating layer 322 is disposed on a side of the gate insulating layer 321 facing away from the substrate 10 and covers the first gate electrode 314. The first electrode 312 and the second electrode 313 are respectively disposed on a side of the inter-insulating layer 322 facing away from the substrate 10, and the first electrode 312 and the second electrode 313 are respectively connected to the first active portion 311 through vias. The planarization layer 33 is disposed on a side of the inter-insulating layer 322 facing away from the substrate 10, and covers the first electrode 312 and the second electrode 313. The infrared sensing unit 31 in the embodiment of the present application may be a top gate thin film transistor or a bottom gate thin film transistor, which is not particularly limited.
The photosensitive material of the first active portion 311 may be silicon, gallium compound, indium antimonide, gallium nitride, indium selenide, or the like. When the light of the infrared light emitting unit 211 is irradiated to the human body, the thus-formed reflected light reaches the photosensitive material of the first active portion 311 of the infrared sensing unit 31. The first gate 314 controls the first active portion 311 to be turned on, and then the first electrode 312 and the second electrode 313 to be turned on, so that the optical signal is converted into an electrical signal, thereby realizing detection at a short distance.
The embodiment of the application adopts the phototransistor as the infrared sensing unit 31, has better photosensitivity and dynamic range, reduces devices and sizes, and can realize high resolution in display and sensing. The infrared sensing unit 31 is integrated in the driving device layer 30, so that the area of the light emitting structure is not occupied, the crosstalk and electric leakage influence on the light emitting structure and the photosensitive element are avoided, the performance of the light emitting structure is not influenced, the integration level of the display device is improved, and the light and thin display device is conveniently realized.
The infrared sensing unit 31 is a gap type amorphous silicon thin film transistor.
The gap type amorphous silicon thin film transistor means that the orthographic projection of the first gate 314 on the first active portion 311 does not completely cover the channel region of the first active portion 311, and there is an active region capable of sensing light, and the first gate 314 is disposed close to one side of the first active portion 311, that is, the orthographic projection portion of the first gate 314 on the substrate 10 covers the orthographic projection of the first active portion 311 on the substrate 10, and the exposed area of the first active portion 311 on the other side is larger and is not covered by the first gate 314, thereby increasing the area for receiving the light reflected by the finger.
The traditional phototransistor has obvious light response distinction in the turn-off area, and the gap type amorphous silicon thin film transistor has better light response distinction in the turn-on area and the turn-off area, and has the advantages of better photosensitivity, dynamic range, sensing current level and the like compared with the traditional phototransistor.
Preferably, the photosensitive material of the first active portion 311 includes amorphous silicon. The ratio of photoconduction of the amorphous silicon after illumination to dark conductivity without illumination can reach 10 5 orders of magnitude, and electron hole pairs generated by the infrared sensing unit 31 after illumination migrate under the action of the electric fields of the first electrode 312 and the second electrode 313 to form photocurrent.
Preferably, the photosensitive material of the first active portion 311 includes hydrogenated amorphous silicon.
The electrical properties of the hydrogenated amorphous silicon can be controlled and adjusted by the vapor deposition process to meet the performance requirements of a particular application. Hydrogenated amorphous silicon still has good sensitivity at lower optical power, is particularly suitable for detecting weak optical signals, and can provide reliable signal amplification at low optical levels. Hydrogenated amorphous silicon generally has lower dark current and noise levels, which helps to improve the signal-to-noise ratio, especially in low light conditions. Second, hydrogenated amorphous silicon is relatively inexpensive to manufacture compared to some other photosensitive materials.
In some embodiments, an infrared driving transistor M1 for driving the infrared light emitting unit 211 is further disposed in the driving device layer 30, where the infrared driving transistor M1 includes a second gate electrode 341, a second active portion 342, and a third electrode 343 and a fourth electrode 344 respectively connected to the second active portion 342, and one of the third electrode 343 and the fourth electrode 344 is connected to the infrared light emitting unit 211.
The infrared sensing unit 31 is disposed near-infrared driving transistor M1 so as to receive the reflected light of the infrared light emitting unit 211. Each of the infrared light emitting units 211 may be connected to a corresponding one of the infrared driving transistors M1 to achieve individual control of the infrared light emitting units 211. The second gate 341 is used for controlling the on state of the infrared driving transistor M1, and the second active portion 342 is a main control layer of the infrared driving transistor M1 and is used for controlling the conduction of current. One of the third electrode 343 and the fourth electrode 344 is a source, and the other is a drain. The electric field between the third electrode 343 and the fourth electrode 344 is controlled by the second active part 342, and the second active part 342 may be turned on or off under the control of the second gate electrode 341, allowing current to flow through the infrared light emitting unit 211, or preventing current from flowing, thereby changing the state of the infrared light emitting unit 211.
Preferably, the first active portion 311 and the second active portion 342 are disposed on the same layer, and the first active portion 311 and the second active portion 342 share the same gate insulating layer 321, so that the process steps of the display panel 100 are simplified, and the thickness of the display panel 100 can be reduced.
The first active portion 311 and the second active portion 342 may be made of the same material, for example, amorphous silicon. Alternatively, the first active portion 311 and the second active portion 342 may be made of different materials, for example, the first active portion 311 includes amorphous silicon and the second active portion 342 includes polysilicon (P-Si).
Preferably, the first electrode 312 is arranged in the same layer as the second electrode 313. The first electrode 312 and the second electrode 313 are simultaneously formed through the same manufacturing process step, further simplifying the process steps of the display panel 100 and reducing the thickness of the display panel 100.
Preferably, the first electrode 312, the second electrode 313, the third electrode 343 and the fourth electrode 344 are arranged in the same layer, and are all arranged on one side of the insulating layer 322 away from the substrate 10. The first electrode 312, the second electrode 313, the third electrode 343, and the fourth electrode 344 are simultaneously formed through the same manufacturing process step, further simplifying the process steps of the display panel 100, and further reducing the thickness of the display panel 100.
In some embodiments, the display panel 100 further includes a pixel defining layer 50, the pixel defining layer 50 includes a first pixel opening 51, and the infrared light emitting unit 211 is located in the first pixel opening 51.
The plurality of infrared light emitting units 211 may be disposed in the plurality of pixel openings 51 in a one-to-one correspondence, and optical crosstalk between the infrared light emitting units 211 may be avoided.
In some embodiments, the pixel defining layer 50 further includes a first light shielding portion 52, the first light shielding portion 52 being disposed at a peripheral side of the first pixel opening 51.
The first light shielding portion 52 may be configured as a black matrix to reduce the reflectivity of light inside the display panel 100, and may also serve as a collimation layer of the infrared light emitting unit 211 to reduce optical crosstalk. The first light-transmitting portion 53 allows the infrared light emitted from the infrared light-emitting unit 211 to be reflected by the human body and then to pass through the film layer above the infrared sensing unit 31 to reach the infrared sensing unit 31.
Preferably, the pixel defining layer 50 further includes a first light-transmitting portion 53, where the first light-transmitting portion 53 is disposed above the infrared sensing unit 31, and the front projection of the infrared sensing unit 31 on the substrate 10 is located within the front projection range of the infrared first light-transmitting portion 53 on the substrate 10, so as to ensure that more reflected infrared light is received by the infrared sensing unit 31. As shown in fig. 2, the pixel defining layer 50 preferably further includes a second pixel opening 54, and the sub-pixel 25 is disposed in the second pixel opening 54; the driving device layer 30 is further provided with a pixel driving transistor 35 for driving the sub-pixel 25 to emit light, and an active portion of the pixel driving transistor 35 is disposed in the same layer as the first active portion 311, thereby further reducing the thickness of the display panel 100. The active portion of the pixel driving transistor 35 and the first active portion 311 may be simultaneously formed through the same manufacturing process step, further simplifying the process steps of the display panel 100.
The display panel 80 further includes an encapsulation layer 60 disposed on a side of the pixel defining layer 50 away from the substrate 10, where the encapsulation layer 60 is used for encapsulating the infrared light emitting unit 54 and the sub-pixels 25, and the encapsulation layer 60 disposed above the infrared sensing unit 31 can be multiplexed into the first light transmitting portion 53 due to higher light transmittance of the encapsulation layer 60, so as to improve the sensing efficiency of the infrared sensing unit 31.
Preferably, the display panel 100 further includes a first power line S1, and the first electrode 312 of the infrared sensing unit 31 and the first electrode of the pixel driving transistor 35 are electrically connected to the first power line S1.
The first supply line S1 may be a negative voltage supply line, i.e. the ground line of the circuit, which provides a potential reference point in the circuit. The first electrode 312 of the infrared sensing unit 31 and the first electrode of the pixel driving transistor 35 are connected to the first power line S1, which helps to establish a proper operating voltage and current environment, which can ensure stability and reliability of the infrared sensing unit 31 and the pixel driving transistor 35, while providing proper potential references for signal processing and data readout. In addition, the first power line S1 may be used to realize potential distribution of the circuit to ensure normal operation of the infrared sensing unit 31 and the pixel driving transistor 35.
Preferably, the display panel 100 further includes a second power line S2, and the second electrode 313 of the infrared sensing unit 31 and the second electrode of the sub-pixel 25 are electrically connected to the second power line S2.
The second power line S2 may be a positive voltage power line, and is connected to the second electrode 313 of the infrared sensing unit 31 and the second electrode of the sub-pixel 25, respectively, and can supply the positive power voltage to the driving transistor M1.
As shown in fig. 1, in some embodiments, the filter layer 80 further includes a second light shielding portion 82 and a second light transmitting portion 83; the second light-transmitting portion 83 is disposed above the first pixel opening 51, the second light-shielding portion 82 is disposed above the first light-shielding portion 52, and the orthographic projection of the first light-shielding portion 52 on the substrate 10 at least partially overlaps with the orthographic projection of the second light-shielding portion 82 on the substrate 10, and the orthographic projection of the first light-transmitting portion 53 on the substrate 10 is larger than the orthographic projection of the second light-transmitting portion 83 on the substrate 10.
The second light transmitting portion 83 allows the infrared light of the infrared light emitting unit 211 to emit, and the second light shielding portion 82 may be a black matrix, which reduces the reflectivity of the external light and also serves as a collimating layer of the infrared light emitting unit 211.
As shown in fig. 2, the filter layer 80 preferably further includes a third light shielding portion 84 and a third light transmitting portion 85, where the third light transmitting portion 85 is disposed above the second pixel opening 54, and an orthographic projection of the third light shielding portion 84 on the substrate 10 is located at a peripheral side of an orthographic projection of the second pixel opening 54 on the substrate 10, and an orthographic projection of the second pixel opening 54 on the substrate 10 is located within an orthographic projection range of the third light transmitting portion 85 on the substrate 10.
The third light-transmitting portion 85 allows the light of the sub-pixel 25 in the second pixel opening 54 to be emitted, and the third light-shielding portion 84 may be a black matrix, so as to reduce the reflectivity of the external light and also serve as a collimation layer of the sub-pixel 25.
In some embodiments, the display panel 100 further includes an encapsulation layer 60, the encapsulation layer 60 is disposed on a side of the light emitting device layer 20 facing away from the substrate 10, and the filter layer 80 is disposed on a side of the encapsulation layer 60 facing away from the substrate 10. The encapsulation layer 60 is used for protecting the light emitting device layer 20 from being damaged by moisture and oxygen, and the encapsulation layer 60 may be a thin film encapsulation layer 60 including an inorganic encapsulation layer 60, an organic encapsulation layer 60, and an inorganic encapsulation layer 60 stacked to play a role in blocking moisture and oxygen.
As shown in fig. 3, the first aspect of the present application further provides a display panel 100, where the display panel 100 includes an induction display area, the induction display area includes a first display area Z1 and a second display area Z2, and the first display area Z1 is disposed on at least one side of the second display area Z21; the first display region Z1 and the second display region Z2 each include an infrared sensing unit 31; the first display area Z1 further includes an infrared light emitting unit 211 positioned at one side of the infrared sensing unit 31; wherein the infrared sensing unit 31 includes a first active portion 311 for sensing infrared light intensity.
In the first display area Z1, both the infrared light emitting unit 211 and the infrared sensing unit 31 are provided, and the first active portion 311 of the infrared sensing unit 31 can receive infrared light reflected by the sensing human body and convert the optical signal into an electrical signal, thereby realizing a short-distance detection function. In the second display area Z2, only the infrared sensing unit 31 is provided for detecting infrared light of the environment, and the infrared light emitting unit 211 is not provided, so that interference influence of infrared light components of the environment can be eliminated, and an infrared near-distance accurate detection effect can be realized.
Preferably, the first display area Z1 includes a plurality of first sensor sub-areas Z11 arranged at intervals, each first sensor sub-area Z11 is formed of at least one sub-pixel 25, an infrared light emitting unit 211 and an infrared sensing unit 31, and at least one sub-pixel 25 and an infrared light emitting unit 211 are distributed at a peripheral side of the infrared sensing unit 31.
For example, in each of the first sensor sub-regions Z11, a green sub-pixel 25, a blue sub-pixel 25, and an infrared light emitting unit 211 are provided on the peripheral side of the infrared sensing unit 31, respectively. In the embodiment of the application, each first sensor sub-zone Z11 is provided with an infrared light emitting unit 211 and an infrared sensing unit 31, so that the number of the infrared sensing units 31 can be increased, and the efficiency of infrared short-distance detection can be improved.
Preferably, the second display area Z2 includes a plurality of second sensor sub-areas Z21 arranged at intervals, each second sensor sub-area Z21 is formed by at least one sub-pixel 25 and an infrared sensing unit 31, and at least one sub-pixel 25 is located beside the infrared sensing unit 31.
For example, in each of the second sensor sub-areas Z21, a red sub-pixel 25, a blue sub-pixel 25, and a green sub-pixel 25 are respectively disposed beside the infrared sensing unit 31, and the light emitted from the sub-pixels 25 is visible light. The infrared sensing unit 31 is used for detecting infrared light of the environment, and the second sensing sub-area Z21 is not provided with the infrared light emitting unit 211, so that interference influence of infrared light components of the environment can be eliminated, and infrared near-distance accurate detection effect can be achieved. In addition, in this embodiment, each of the second sensor sub-regions Z21 is provided with a sub-pixel 25 and an infrared sensing unit 31, which can give consideration to the pixel density of the display panel 100 and the efficiency of detecting ambient infrared light.
Preferably, the sensing display area further includes a plurality of third sensing sub-areas Z31 arranged at intervals, each third sensing sub-area Z31 is formed by at least one sub-pixel 25 and a fingerprint detection unit T1, and at least one sub-pixel 25 is located beside the fingerprint detection unit T1.
In the third sensor sub-area Z31, a green sub-pixel 25, a blue sub-pixel 25, and a red sub-pixel 25 are disposed, respectively, beside the fingerprint detection unit T1.
The fingerprint detection unit T1 may be a PIN photodiode, an MSM photodiode, a phototransistor, or the like. The fingerprint detection unit T1 is capable of capturing a fingerprint image of a user, and the fingerprint detection unit T1 is configured to receive light rays of sub-pixels reflected by a finger to identify fingerprint information of the finger. The fingerprint detection unit T1 is integrated in the driving device layer 30, so that integration of a plurality of functions can be realized, the size of the display device is reduced, and the integration level of the display device is improved.
Preferably, the second sensor sub-zone Z21 is arranged on the side of the third sensor sub-zone Z31 remote from the first sensor sub-zone Z11. The second sensor sub-region Z21 is relatively far away from the first sensor sub-region Z11, so that interference of the infrared light emitting unit 211 in the first sensor sub-region Z11 on detection of the ambient infrared light by the second sensor sub-region Z21 can be reduced, and detection efficiency of the ambient infrared light by the second sensor sub-region Z21 can be improved.
As shown in fig. 4, the fingerprint detection unit T1 preferably includes a third active portion 61 for sensing light intensity.
When the light of the sub-pixel 25 irradiates the surface of the glass cover plate pressed with the fingerprint, the reflected light thus formed reaches the third active portion 61 of the fingerprint detection unit T1, and the light signal is converted into an electrical signal by receiving the readout signal of the sensing data line RO, thereby realizing fingerprint identification. By using the third active portion 61 as a photosensitive portion for fingerprint recognition, it has better photosensitivity and dynamic range, and reduces the device and size, and high resolution can be achieved for both display and sensing.
Preferably, the third active portion 61 is located in the same layer as the first active portion 311, and the fingerprint detection unit T1 further includes a third gate electrode 62 located on the third active portion 61, the third gate electrode 62 covering a portion of the third active portion 61.
The third active portion 61 and the first active portion 31 are arranged in the same layer, so that the process steps of the display panel 100 can be simplified, and the thickness of the display panel 100 can be reduced.
Preferably, the fingerprint detection unit is a gap type amorphous silicon thin film transistor.
The gap type amorphous silicon thin film transistor means that the orthographic projection of the third gate electrode 62 on the third active portion 61 does not completely cover the channel region of the third active portion 61, and there is an active region capable of sensing light, and the third gate electrode 62 is disposed near one side of the third active portion 61, that is, the orthographic projection portion of the third gate electrode 62 on the substrate 10 covers the orthographic projection of the third active portion 61 on the substrate 10, and the area of the other side of the third active portion 61 exposed is larger and is not covered by the third gate electrode 62, thereby increasing the area for receiving the light reflected by the finger.
The gap type amorphous silicon thin film transistor has obvious light response difference in the on and off regions, and the current value of the gap type amorphous silicon thin film transistor is 10 3 different from the current value of the illumination state gap type amorphous silicon thin film transistor in the dark state, so that the gap type amorphous silicon thin film transistor has the advantages of small area, better photosensitivity, dynamic range, sensing current level and the like compared with the traditional light sensing transistor.
The infrared sensing unit 31 and the fingerprint detection unit T1 can share a driving and reading chip, so that infrared rapid detection and multifunctional compatibility of fingerprint detection are realized.
As shown in fig. 5, a second aspect of the present application provides a detection circuit of a display panel 100, which includes a sensing circuit, the sensing circuit includes an infrared sensing unit 31, a first power line S1, a second power line S2 and a sensing output module N1; the infrared sensing unit 31 includes a first active portion 311 for receiving infrared light, and a first electrode 312 and a second electrode 313 of the infrared sensing unit 31 are connected to a first power line S1 and a second power line S2, respectively; the sensing output module N1 is connected to the first electrode 312 of the infrared sensing unit 31, and is configured to output a sensing result of the infrared sensing unit 31 in response to the acquisition driving signal.
In the embodiment of the application, the first power line S1 and the second power line S2 provide proper working voltage and current environment for the induction circuit. The infrared light emitting unit 211 can emit infrared light, or the infrared light emitting unit 211 emits visible light and then converts it into infrared light. The first active portion 311 of the infrared sensing unit 31 can receive infrared light reflected by the sensing human body, and convert the optical signal into an electrical signal, thereby realizing a close range detection function. By integrating the infrared sensing unit 31 in the driving device layer 30, the structure is simplified, the space is saved, the integration level of the display device is improved, and the light and thin design of the display device is facilitated.
In some embodiments, the sensing output module N1 includes a scan control unit N11, and a scan signal line SC and a sensing data line RO respectively connected to the scan control unit N11, where the scan control unit N11 is connected to the first electrode 312 of the infrared sensing unit 31.
The scan control unit N11 may include a scan control transistor T3, a scan controller, or the like. The first electrode 312 of the infrared sensing unit 31 is connected to the scan control unit N11, and the scan control unit N11 is used as a scan control switch, and the scan control unit N11 is selected row by row or column by column, so that the active time of the sensing data line RO can be reduced, thereby reducing the chance of leakage current.
Preferably, the scan control unit N11 includes a scan control transistor T3, a first electrode of the scan control transistor T3 is connected to the first electrode 312 of the infrared sensing unit 31, a second electrode of the scan control transistor T3 is connected to the sensing data line RO, and a gate of the scan control transistor T3 is connected to the scan signal line SC for receiving the acquisition driving signal transmitted by the scan signal line SC.
The scan control transistor T3 serves as a switch between the sense data line RO and the first power line S1, thereby isolating them, and receiving the read signal of the sense data line RO only when needed, helping to reduce leakage current between the sense data line RO and the first power line S1.
As shown in fig. 6, in some embodiments, the sensing output module N1 further includes a source follower module N4, where the source follower module N4 is connected to the scan control unit N11 and the second power line S2, and the source follower module N4 is further connected to the first electrode 312 of the infrared sensing unit 31, and the source follower module N4 is configured to amplify and output the induced current of the infrared sensing unit 31.
The source follower module N4 separates the output signal from the high output impedance circuit, reducing the output impedance of the circuit, and helping to reduce the distortion of the output signal. The source follower module N4 can also increase the bandwidth of the circuit, improve the frequency response of the signal, and reduce the load effect by separating the output signal from the original inductive signal circuit, so as to ensure that the read signal is not affected by the load. The source follower module N4 may also improve the signal-to-noise ratio because it may reduce noise in the read signal and provide a clearer signal.
Preferably, the source follower module N4 includes a source follower transistor T4, a first pole of the source follower transistor T4 is connected to the second power line S2, a second pole of the source follower transistor T4 is connected to the scan control unit N11, and a gate of the source follower transistor T4 is connected to the first electrode 312 of the infrared sensing unit 31.
Illustratively, the source of the source follower transistor T4 may be connected to the drain of the scan control transistor T3, and the drain of the source follower transistor T4 may be connected to the second power line S2 through the scan control transistor T3 connected to the sensing data line RO.
The source follower transistor T4 can increase the lower output impedance, helping to reduce impedance mismatch between the signal source and the subsequent circuitry. The source follower transistor T4 is capable of providing a relatively large output current. In addition, the source follower transistor T4 can provide a relatively large output current, and the variation of the input signal can be effectively followed by the source follower transistor T4, and the output signal closely replicates the variation of the input signal without introducing significant phase delay or distortion.
In some embodiments, the sensing circuit further includes a reset module N3, where the reset module N3 is connected between the second power line S2 and the first electrode 312 of the infrared sensing unit 31, and the reset module N3 is used to reset the voltage of the first electrode 312 of the infrared sensing unit 31.
When receiving the reset signal, the reset module N3 resets the voltage of the first electrode 312 of the infrared sensing unit 31, and restores the photo-sensing transistor to the initial state, so as to ensure the normal operation thereof.
Preferably, the reset module N3 includes a reset transistor T2, a first pole of the reset transistor T2 is connected to the second power line S2, a second pole of the reset transistor T2 is connected to the first electrode 312 of the infrared sensing unit 31, and a gate of the reset transistor T2 is connected to the reset signal line RST for receiving a reset signal transmitted by the reset signal line RST.
By resetting the first electrode 312 of the infrared sensing unit 31 to the initial state, it can be ensured that each measurement or detection starts from the same starting potential, which contributes to an improvement in the accuracy of the photoelectric signal. If continued operation is continued for a long period of time, charge accumulation may result, affecting performance. The embodiment of the application can prevent the accumulation of charges by periodically resetting the voltage of the first electrode 312, thereby maintaining stable performance. In addition, the reset signal can also be used to turn off the infrared sensing unit 31, thereby reducing leakage current in the circuit. By resetting the first electrode 312 voltage, the dynamic range of the phototransistor can be controlled to accommodate different light intensities.
Preferably, the detection circuit further includes a pixel driving circuit including a light emitting unit 211 and a pixel driving module connected to the light emitting unit 211, the pixel driving module being connected to the second power line S2, the light emitting unit 211 being connected to the first power line S1.
The light emitting unit 211 includes an infrared light emitting unit 311 or a subpixel 25.
The detection circuit further includes a pixel driving circuit, in which a plurality of transistors are provided, and the pixel driving circuit may be any one of a 2T1C circuit, a 3T2C circuit, a 7T1C circuit, or a 7T2C circuit, and herein, "2T1C circuit" means that the pixel driving circuit includes 2 thin film transistors (T) and 1 capacitor (C) is a pixel driving circuit, and other "7T1C circuit", "7T2C circuit", "9T1C circuit", and so on.
Taking a 7T1C circuit as an example, the pixel driving circuit is connected to the transmission data signal Vdata, and the plurality of transistors may include a driving transistor M1, and the data signal Vdate is received by the gate of the driving transistor M1. The driving transistor M1 is for supplying a driving current to the light emitting unit 211. The plurality of transistors further includes a data writing transistor M3 connected to the first pole of the driving transistor M1 for selectively providing a data signal Vdata; a compensation transistor M2 controlled by the control signal S2, a first pole of the compensation transistor M2 being connected to the storage capacitor, a second pole of the compensation transistor M2 being connected to a second pole of the driving transistor M1 for compensating the threshold voltage Vth of the driving transistor M1; light emission control transistors M6 and M7 controlled by the light emission control signal EM, a first pole of the light emission control transistor M6 being connected to the first power line S1, a second pole of the light emission control transistor M6 being connected to a first pole of the driving transistor M1, a first pole of the light emission control transistor M7 being connected to a second pole of the driving transistor M1, the second pole of the light emission control transistor M7 being connected to the light emission unit 211 for selectively allowing the light emission unit 211 to enter a light emission phase; a reset transistor T2 controlled by the control signal S1, a first pole of the reset transistor T2 is connected to the initialization power line, and a second pole of the reset transistor T2 is connected to the gate of the driving transistor M1, for providing a reset signal to the gate of the driving transistor M1; an initialization transistor M5 controlled by the control signal S3 for providing an initialization signal to the anode 22 of the light emitting unit 211, the first pole of the initialization transistor M5 being connected to the initialization power line, the first pole of the initialization transistor M5 being connected to the anode 22 of the light emitting unit 211.
The cathode 24 of the infrared light emitting unit 211 is connected to the first power line S1, and the pixel driving circuit and the sensing circuit in the embodiment of the application share a negative voltage power signal, so as to further improve the integration level of the display panel 100.
While the application has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various changes and substitutions of equivalents may be made and equivalents will be apparent to those skilled in the art without departing from the scope of the application. Therefore, the protection scope of the application is subject to the protection scope of the claims.
Claims (10)
1. A display panel, comprising:
A substrate;
the driving device layer is arranged on one side of the substrate and comprises an infrared sensing unit;
the light-emitting device layer is arranged on one side, away from the substrate, of the driving device layer, and comprises an infrared light-emitting unit;
the infrared sensing unit comprises a first active part, and the first active part is used for at least sensing infrared light reflected by the infrared light emitting unit.
2. The display panel according to claim 1, further comprising a filter layer provided on a side of the light emitting device layer remote from the substrate, the filter layer including a filter portion located above the infrared sensing unit, an orthographic projection of the infrared sensing unit on the substrate being located within an orthographic projection range of the filter portion on the substrate;
Preferably, the infrared sensing unit includes a first gate electrode covering a portion of the first active portion, and a first electrode and a second electrode connected to the first active portion, respectively, wherein a front projection of the first gate electrode on the substrate is within a front projection range of the first active portion on the substrate, the first active portion uncovered by the first gate electrode is used for sensing infrared light, and a photocurrent is formed between the first electrode and the second electrode;
preferably, the infrared sensing unit is a gap type amorphous silicon thin film transistor;
Preferably, the first active portion includes an amorphous silicon material;
Preferably, the first active portion comprises hydrogenated amorphous silicon material.
3. The display panel according to claim 2, wherein an infrared driving transistor for driving the infrared light emitting unit to emit light is further provided in the driving device layer;
the infrared driving transistor comprises a second grid electrode, a second active part, a third electrode and a fourth electrode which are respectively connected with the second active part, and one of the third electrode and the fourth electrode is connected with the infrared light emitting unit;
Preferably, the first active portion and the second active portion are arranged in the same layer;
preferably, the first electrode and the second electrode are arranged in the same layer;
preferably, the first electrode, the second electrode, the third electrode and the fourth electrode are arranged in the same layer.
4. The display panel of claim 2, wherein the light emitting device layer further comprises a pixel definition layer comprising a first pixel opening, the infrared light emitting unit being located within the first pixel opening;
Preferably, the pixel defining layer further includes a first light shielding portion disposed on a peripheral side of the first pixel opening;
Preferably, the pixel defining layer further includes a first light-transmitting portion, the first light-transmitting portion is disposed above the infrared sensing unit, and an orthographic projection of the infrared sensing unit on the substrate is located in an orthographic projection range of the first light-transmitting portion on the substrate;
preferably, the pixel defining layer further includes a second pixel opening, and a subpixel is disposed in the second pixel opening;
And a pixel driving transistor for driving the sub-pixel to emit light is further arranged in the driving device layer, and an active part of the pixel driving transistor and the first active part are arranged on the same layer.
Preferably, the display panel further includes a first power line, and the first electrode of the infrared sensing unit and the first electrode of the pixel driving transistor are electrically connected to the first power line;
Preferably, the display panel further includes a second power line, and the second electrode of the infrared sensing unit and the second electrode of the sub-pixel are electrically connected to the second power line.
5. The display panel according to claim 4, wherein the filter layer further comprises a second light shielding portion and a second light transmitting portion;
The second light-transmitting part is arranged above the first pixel opening, the second light-shielding part is arranged above the first light-shielding part, the orthographic projection of the first light-shielding part on the substrate is at least partially overlapped with the orthographic projection of the second light-shielding part on the substrate, and the orthographic projection of the first light-transmitting part on the substrate is larger than the orthographic projection of the second light-transmitting part on the substrate;
Preferably, the filter layer further includes a third light shielding portion and a third light transmitting portion, the third light transmitting portion is disposed above the second pixel opening, an orthographic projection of the third light shielding portion on the substrate is located on a front projection peripheral side of the second pixel opening on the substrate, and an orthographic projection of the second pixel opening on the substrate is located in an orthographic projection range of the third light transmitting portion on the substrate;
Preferably, the display panel further comprises an encapsulation layer, the encapsulation layer is arranged on one side, away from the substrate, of the light-emitting device layer, and the light filtering layer is arranged on one side, away from the substrate, of the encapsulation layer.
6. A display panel, wherein the display panel comprises an induction display area, the induction display area comprises a first display area and a second display area, and the first display area is arranged on at least one side of the second display area;
the first display area and the second display area both comprise infrared sensing units;
the first display area further comprises an infrared light-emitting unit positioned at one side of the infrared sensing unit;
Wherein the infrared sensing unit comprises a first active part for sensing infrared light intensity;
Preferably, the first display area includes a plurality of first sensor sub-areas arranged at intervals, each first sensor sub-area is formed by at least one sub-pixel, the infrared light emitting unit and the infrared sensing unit, and the at least one sub-pixel and the infrared light emitting unit are distributed on the periphery of the infrared sensing unit;
Preferably, the second display area includes a plurality of second sensor sub-areas arranged at intervals, each second sensor sub-area is formed by at least one sub-pixel and an infrared sensing unit, and the at least one sub-pixel is located beside the infrared sensing unit;
Preferably, the sensing display area further comprises a plurality of third sensing sub-areas arranged at intervals, each third sensing sub-area is formed by at least one sub-pixel and a fingerprint detection unit, and at least one sub-pixel is located beside the fingerprint detection unit;
preferably, the second inductor zone is arranged at a side of the third inductor zone remote from the first inductor zone;
Preferably, the fingerprint detection unit includes a third active part for sensing light intensity;
Preferably, the third active portion and the first active portion are located in the same layer, and the fingerprint detection unit further includes a third gate located on the third active portion, the third gate covering a portion of the third active portion;
Preferably, the fingerprint detection unit is a gap type amorphous silicon thin film transistor.
7. The detection circuit is characterized by comprising an induction circuit, wherein the induction circuit comprises an infrared induction unit, a first power line, a second power line and a sensing output module;
The infrared induction unit comprises a first active part for receiving infrared light, and a first electrode and a second electrode of the infrared induction unit are respectively and electrically connected with the first power line and the second power line;
the sensing output module is connected with the first electrode of the infrared sensing unit and is used for responding to the acquisition driving signal to output the induction current of the infrared sensing unit.
8. The detection circuit according to claim 7, wherein the sensing output module comprises a scan control unit, and a scan signal line and an induction data line respectively connected with the scan control unit, the scan control unit being connected with the first electrode of the infrared induction unit;
preferably, the scan control unit includes a scan control transistor, a first electrode of the scan control transistor is connected to the first electrode of the infrared sensing unit, a second electrode of the scan control transistor is connected to the sensing data line, and a gate of the scan control transistor is connected to the scan signal line, and is configured to receive an acquisition driving signal transmitted by the scan signal line.
9. The detection circuit according to claim 7, wherein the sensing circuit further comprises a source follower module, the source follower module is connected to the scan control unit and the second power line of the display panel, the source follower module is further connected to the first electrode of the infrared sensing unit, and the source follower module is configured to amplify and output the sensed current of the infrared sensing unit;
preferably, the source follower module includes a source follower transistor, a first pole of the source follower transistor is connected to the second power line, a second pole of the source follower transistor is connected to the scan control unit, and a gate of the source follower transistor is connected to the first electrode of the infrared sensing unit;
preferably, the infrared sensing unit further comprises a reset module, wherein the reset module is connected between the second power line and the first electrode of the infrared sensing unit, and the reset module is used for resetting the voltage of the first electrode of the infrared sensing unit;
Preferably, the reset module comprises a reset transistor, a first pole of the reset transistor is connected with the second power line, a second pole of the reset transistor is connected with the first electrode of the infrared sensing unit, and a grid electrode of the reset transistor is connected with a reset signal line and is used for receiving the reset signal transmitted by the reset signal line;
Preferably, the detection circuit further comprises a pixel driving circuit, the pixel driving circuit comprises a light emitting unit and a pixel driving module connected with the light emitting unit, the pixel driving module is connected with the first power line, and the light emitting unit is connected with the second power line;
the light emitting unit includes the infrared light emitting unit or a sub-pixel.
10. A display device comprising the display panel according to any one of claims 1 to 6 or the detection circuit of the display panel according to any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410015610.2A CN117915723A (en) | 2024-01-04 | 2024-01-04 | Display panel, detection circuit and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410015610.2A CN117915723A (en) | 2024-01-04 | 2024-01-04 | Display panel, detection circuit and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117915723A true CN117915723A (en) | 2024-04-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410015610.2A Pending CN117915723A (en) | 2024-01-04 | 2024-01-04 | Display panel, detection circuit and display device |
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| Country | Link |
|---|---|
| CN (1) | CN117915723A (en) |
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2024
- 2024-01-04 CN CN202410015610.2A patent/CN117915723A/en active Pending
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