CN117913180A - Radiation detector and preparation method thereof - Google Patents
Radiation detector and preparation method thereof Download PDFInfo
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- CN117913180A CN117913180A CN202311759878.9A CN202311759878A CN117913180A CN 117913180 A CN117913180 A CN 117913180A CN 202311759878 A CN202311759878 A CN 202311759878A CN 117913180 A CN117913180 A CN 117913180A
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- 230000005855 radiation Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 22
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 21
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 7
- 239000011259 mixed solution Substances 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 2
- 229910004611 CdZnTe Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000005012 migration Effects 0.000 abstract description 6
- 238000013508 migration Methods 0.000 abstract description 6
- 238000004381 surface treatment Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 238000003384 imaging method Methods 0.000 abstract description 5
- 231100000701 toxic element Toxicity 0.000 abstract description 5
- 238000005498 polishing Methods 0.000 description 14
- 239000007769 metal material Substances 0.000 description 11
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention provides a radiation detector and a preparation method thereof, wherein a plurality of grooves are formed in a substrate, the surfaces of the substrate are divided into a plurality of bosses which are arranged in an array, passivation layers are formed on the inner surfaces of the grooves and the surfaces exposed by the bosses, and finally pixel electrodes and common electrodes of the detector are formed. The formation of the grooves enables all pixels of the detector to be mutually independent, so that the problem of crosstalk between pixels in the carrier migration process is avoided, and the energy resolution of the detector is improved, thereby improving the imaging quality; the passivation layer can prevent current leakage and also has the function of preventing toxic element Cd from diffusing and isolating water vapor, so that the stability of the detector is improved; in the preparation process of the detector, the mixed solution of hydrogen peroxide, phosphoric acid and citric acid is adopted to carry out surface treatment, and the treatment process is safer and more environment-friendly.
Description
Technical Field
The invention relates to the technical field of radiation detection, in particular to a radiation detector and a preparation method thereof.
Background
Cadmium zinc telluride (CdZnTe) is an ideal material for manufacturing X-ray and low energy gamma-ray detectors. The CdZnTe detector can directly convert X-rays or gamma-rays into electric signals, and has the advantages of high spatial resolution and simple structure because of direct conversion and no light scattering in the indirect conversion process of the traditional scintillator detector.
When high-energy photons strike the CdZnTe detector, incident ray photons interact in the semiconductor material to generate charge carriers inside the crystal, and the charge carriers migrate to the pixel electrode under the influence of an external electric field. However, the CdZnTe detector in the prior art is generally a whole planar structure, i.e., the pixels are not independent, so that crosstalk easily occurs between pixels during the migration of carriers to the pixel electrode, thereby resulting in a reduction of energy resolution. In addition, chemical reagents such as Br 2 and methanol are generally adopted to treat the crystal surface of CdZnTe in the prior art, and the treatment process has risks and is not environment-friendly.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a radiation detector and a method for manufacturing the same, wherein a plurality of trenches are formed in a substrate, the plurality of trenches divide the surface of the substrate into a plurality of lands arranged in an array, then passivation layers are formed on the inner surfaces of the trenches and the surfaces exposed by the lands, and finally pixel electrodes and common electrodes of the detector are formed. The formation of the grooves enables all pixels of the detector to be mutually independent, so that the problem of crosstalk between pixels in the carrier migration process is avoided, and the energy resolution of the detector is improved, thereby improving the imaging quality; the passivation layer can prevent current leakage and also has the function of preventing toxic element Cd from diffusing and isolating water vapor, so that the stability of the detector is improved; in the preparation process of the detector, the mixed solution of hydrogen peroxide, phosphoric acid and citric acid is adopted to carry out surface treatment, and the treatment process is safer and more environment-friendly.
To achieve the above and other related objects, the present invention provides a method for manufacturing a radiation detector, including:
providing a substrate having opposite first and second surfaces;
Forming a plurality of grooves on the first surface, wherein the grooves divide the first surface into a plurality of identical bosses, and the bosses are arranged in an array;
forming passivation layers on the surfaces of the bosses and the inner surfaces of the grooves;
Removing the passivation layer on the surface of the boss, and forming a first electrode on the surface of the boss;
and forming a second electrode on the second surface.
Alternatively, the substrate is made of CdTe or CdZnTe crystalline material.
Optionally, forming the plurality of trenches includes:
Forming a patterned first photoresist layer on the first surface;
Forming the trench in the substrate via the patterned first photoresist layer;
And removing the patterned first photoresist layer.
Optionally, the trench is formed in the substrate by wet etching or mechanical cutting.
Optionally, the reagent used in the wet etching is a mixed solution of hydrogen peroxide, phosphoric acid and citric acid.
Optionally, the depth of the groove is one half of the thickness of the substrate, and the width of the groove is 10-500 μm.
Optionally, the passivation layer is made of one or more materials of silicon oxide and silicon nitride.
Optionally, removing the passivation layer on the surface of the mesa, and forming the first electrode on the surface of the mesa includes:
Forming a patterned second photoresist layer on the surface of the passivation layer, wherein the patterned second photoresist layer fills the groove, and an etching window positioned above the boss is formed in the patterned second photoresist layer;
Removing the passivation layer exposed by the etching window, and forming a first electrode in the etching window;
And removing the patterned second photoresist layer.
Optionally, the materials of the first electrode and the second electrode are the same, and are selected from one of Pt, au and Ti.
The invention provides a radiation detector formed by the method for manufacturing the radiation detector, which comprises the following steps:
The substrate is provided with a first surface and a second surface which are opposite, wherein the first surface is provided with a plurality of grooves, the grooves divide the first surface into a plurality of identical bosses, and the bosses are arranged in an array;
the passivation layer is positioned on the inner surface of the groove and part of the surface of the boss;
the first electrode is positioned on the surface of the boss;
And the second electrode is positioned on the second surface.
The radiation detector and the preparation method thereof provided by the invention have at least the following beneficial effects:
the formation of the grooves enables all pixels of the detector to be mutually independent, so that the problem of crosstalk between pixels in the carrier migration process is avoided, and the energy resolution of the detector is improved, thereby improving the imaging quality; the passivation layer can prevent current leakage and also has the function of preventing toxic element Cd from diffusing and isolating water vapor, so that the stability of the detector is improved; in the preparation process of the detector, the mixed solution of hydrogen peroxide, phosphoric acid and citric acid is adopted to carry out surface treatment, and the treatment process is safer and more environment-friendly.
Drawings
FIG. 1a is a schematic diagram of a first patterned photoresist layer according to an embodiment.
Fig. 1b is a schematic view of forming a plurality of trenches according to the first embodiment.
Fig. 1c is a schematic diagram illustrating formation of a passivation layer according to the first embodiment.
FIG. 1d is a schematic diagram of a patterned second photoresist layer according to the first embodiment.
Fig. 1e is a schematic diagram of forming a metal material layer according to the first embodiment.
Fig. 1f shows a schematic structure of a radiation detector according to a second embodiment.
Fig. 2 is a schematic perspective view of a radiation detector according to a second embodiment.
Description of element reference numerals
10. Substrate and method for manufacturing the same
101. A first surface
102. A second surface
110. Groove(s)
120. Boss
21. First photoresist layer
22. Second photoresist layer
220. Etching window
30. Passivation layer
41. First electrode
42. Second electrode
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that, the illustrations provided in the present embodiment only illustrate the basic concept of the present invention by way of illustration, but only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number, positional relationship and proportion of each component in actual implementation may be changed at will on the premise of implementing the present technical solution, and the layout of the components may be more complex.
Example 1
The embodiment provides a method for manufacturing a radiation detector, which comprises the following steps:
S1: providing a substrate having opposite first and second surfaces;
First, a wafer is provided. By way of example, the wafer is a CdTe wafer or a CdZnTe wafer.
The wafer is then subjected to a surface treatment including physical polishing and chemical mechanical polishing surface treatment processes on the wafer surface. As an example, firstly, carrying out physical polishing on a wafer, using a physical polishing instrument, wherein a glass disk is selected as a polishing disk, polishing liquid is formed by mixing 3 mu m alumina powder and deionized water in a weight ratio of 1:10, polishing is carried out until the surface of the wafer presents a frosted shape, then the polishing disk is replaced by a flannelette disk, the polishing liquid is still formed by mixing 3 mu m alumina powder and deionized water in a weight ratio of 1:10, polishing is stopped after at least 10 minutes, and no obvious scratch exists on the surface of the wafer; and then carrying out chemical mechanical polishing on the wafer, wherein the polishing solution is chemical polishing solution, polishing until no macroscopic scratches exist on the surface of the wafer, then washing the wafer with deionized water for 2min, and drying to obtain a clean wafer, thereby completing the surface treatment process of the wafer.
As shown in fig. 1a, with the above surface treated wafer as the substrate 10, the substrate 10 has opposite first and second surfaces 101, 102.
S2: forming a plurality of grooves on the first surface, wherein the grooves divide the first surface into a plurality of identical bosses, and the bosses are arranged in an array;
First, a first photoresist layer 21 is formed on a first surface 101 of a substrate 10, and a patterned first photoresist layer 21 is formed by performing steps such as exposure and development using a photolithography process, as shown in fig. 1 a.
Next, as shown in fig. 1b, a plurality of trenches 110 are formed in the substrate 10 using the patterned first photoresist layer 21 as a mask, and as shown in fig. 2, a portion of the trenches 110 extend along the X-axis direction, and a portion of the trenches 110 extend along the Y-axis direction, so as to divide the first surface 101 into a plurality of identical lands 120, and the plurality of lands 120 are arranged in an array. The formation of the grooves 110 allows the pixels of the detector to be independent of each other, avoids crosstalk between pixels during carrier migration, and improves the energy resolution of the detector, thereby improving imaging quality. By way of example, the depth of the trench 110 is one half the thickness of the substrate 10, and the width of the trench 110 is between 10 μm and 500 μm.
In an alternative embodiment, the trench 110 may be formed by wet etching. As an example, the reagent is a mixed solution of hydrogen peroxide, phosphoric acid and citric acid, and the ratio of hydrogen peroxide, phosphoric acid and citric acid may be 1:1:2. Compared with chemical reagents such as Br 2 and methanol commonly used in the prior art, the mixed solution is safer and more environment-friendly. In other alternative embodiments, the grooves 110 may also be formed by mechanical cutting.
Finally, the patterned first photoresist layer 21 is removed. As an example, the patterned first photoresist layer 21 may be removed using an acetone solution or a C 5H9 NO solution.
S3: forming passivation layers on the surfaces of the bosses and the inner surfaces of the grooves;
As shown in fig. 1c, a passivation layer 30 is deposited on the surface of the above structure, and the passivation layer 30 covers the surface of the boss 120 and the inner surface of the trench 110. The passivation layer 30 can prevent current leakage while preventing diffusion of the toxic element Cd in the substrate 10, thereby improving the stability of the detector. By way of example, the passivation layer 30 may be made of silicon oxide, silicon nitride or other high resistivity material suitable for surface passivation, preferably a silicon nitride material, which has good optical properties and is more dense, and can better isolate external moisture, etc.
S4: removing the passivation layer on the surface of the boss, and forming a first electrode on the surface of the boss;
Firstly, forming a second photoresist layer 22 on the surface of the passivation layer 30, wherein the second photoresist layer 22 is filled in the groove 110 and covers the surface of the boss 120, and the upper surface of the second photoresist layer 22 is flush; after exposure and development steps are performed by using a photolithography process, a patterned second photoresist layer 22 is formed, and referring to fig. 1d, the patterned second photoresist layer 22 has an etching window 220 located above the boss 120, where the etching window 220 is coaxially disposed with the boss 120, and the width of the etching window 220 is slightly smaller than the width of the boss 120.
Next, the passivation layer 30 exposed by the etching window 200 is removed by dry etching.
Next, a metal material layer 400 is deposited on the surface of the structure by using a sputtering deposition method, so as to form the structure shown in fig. 1 e. The metal material layer 400 covers the surface of the boss 120 exposed by the etching window 200 and the surface of the patterned second photoresist layer 22. As an example, the metal material layer 400 may be selected from one of Pt, au, ti.
Finally, the patterned first photoresist layer 22 and the metal material layer 400 on the surface thereof are removed, while the metal material layer 400 in the etching window 200 is remained, so as to form the first electrode 41 of the detector, wherein the first electrode 41 is a pixel electrode, as shown in fig. 1 f. As an example, the patterned first photoresist layer 22 and the metal material layer 400 on the surface thereof may be removed using an acetone solution or a C 5H9 NO solution.
S5: and forming a second electrode on the second surface.
As shown in fig. 1f, a metal material is deposited on the second surface 102 of the substrate 10 by means of sputter deposition to form the second electrode 42 of the detector, the second electrode 42 being a common electrode. As an example, the metal material may be selected from one of Pt, au, ti.
Example two
The present embodiment provides a radiation detector, as shown in fig. 1f, comprising a substrate 10, a passivation layer 30, a first electrode 41 and a second electrode 42, the substrate 10 having a plurality of trenches 110 therein. As an example, the radiation detector provided in this embodiment is formed by the method for manufacturing the radiation detector provided in the first embodiment.
By way of example, the substrate 10 is made of CdTe wafer or CdZnTe wafer material.
As shown in fig. 1f, the substrate 10 has a first surface 101 and a second surface 102 opposite to each other, wherein the first surface 101 has a plurality of grooves 110, and as shown in fig. 2, a part of the grooves 110 extend along the X-axis direction, and a part of the grooves 110 extend along the Y-axis direction, so that the first surface 101 is divided into a plurality of identical bosses 120, and the plurality of bosses 120 are arranged in an array. The formation of the grooves 110 allows the pixels of the detector to be independent of each other, avoids crosstalk between pixels during carrier migration, and improves the energy resolution of the detector, thereby improving imaging quality. By way of example, the depth of the trench 110 is one half the thickness of the substrate 10, and the width of the trench 110 is between 10 μm and 500 μm.
As shown in fig. 1f, the passivation layer 30 is located on the inner surface of the trench 110, and a portion of the surface of the mesa 120. The passivation layer 30 can prevent current leakage while preventing diffusion of the toxic element Cd in the substrate 10, thereby improving the stability of the detector. By way of example, the passivation layer 30 may be made of silicon oxide, silicon nitride or other high resistivity material suitable for surface passivation, preferably a silicon nitride material, which has good optical properties and is more dense, and can better isolate external moisture, etc.
As shown in fig. 1f, the first electrode 41 is located on the surface of the boss 120. As an example, the first electrode 41 is a pixel electrode of the detector, and is made of a metal material, for example, one of Pt, au, ti.
As shown in fig. 1f, the second electrode 42 is located on the second surface 102 of the substrate 10. As an example, the second electrode 42 is a common electrode of the detector, made of a metal material, for example, one of Pt, au, ti.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. A method of manufacturing a radiation detector, comprising:
providing a substrate having opposite first and second surfaces;
Forming a plurality of grooves on the first surface, wherein the grooves divide the first surface into a plurality of identical bosses, and the bosses are arranged in an array;
forming passivation layers on the surfaces of the bosses and the inner surfaces of the grooves;
Removing the passivation layer on the surface of the boss, and forming a first electrode on the surface of the boss;
and forming a second electrode on the second surface.
2. The method of manufacturing a radiation detector according to claim 1, wherein the substrate is made of CdTe or CdZnTe crystalline material.
3. The method of manufacturing a radiation detector of claim 1, wherein forming a plurality of trenches comprises:
Forming a patterned first photoresist layer on the first surface;
Forming the trench in the substrate via the patterned first photoresist layer;
And removing the patterned first photoresist layer.
4. A method of manufacturing a radiation detector according to claim 3, wherein the trenches are formed in the substrate by wet etching or mechanical cutting.
5. The method of claim 4, wherein the reagent used in the wet etching is a mixed solution of hydrogen peroxide, phosphoric acid and citric acid.
6. The method of claim 1, wherein the trench has a depth of one half of the thickness of the substrate and a width of 10 μm to 500 μm.
7. The method of claim 1, wherein the passivation layer is made of one or more of silicon oxide and silicon nitride.
8. The method of claim 1, wherein removing the passivation layer on the mesa surface and forming a first electrode on the mesa surface comprises:
Forming a patterned second photoresist layer on the surface of the passivation layer, wherein the patterned second photoresist layer fills the groove, and an etching window positioned above the boss is formed in the patterned second photoresist layer;
Removing the passivation layer exposed by the etching window, and forming a first electrode in the etching window;
And removing the patterned second photoresist layer.
9. The method of manufacturing a radiation detector according to claim 1, wherein the first electrode and the second electrode are made of the same material, and are selected from one of Pt, au, and Ti.
10. A radiation detector formed by the method of manufacturing a radiation detector according to any one of claims 1 to 9, comprising:
The substrate is provided with a first surface and a second surface which are opposite, wherein the first surface is provided with a plurality of grooves, the grooves divide the first surface into a plurality of identical bosses, and the bosses are arranged in an array;
the passivation layer is positioned on the inner surface of the groove and part of the surface of the boss;
the first electrode is positioned on the surface of the boss;
And the second electrode is positioned on the second surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311759878.9A CN117913180A (en) | 2023-12-20 | 2023-12-20 | Radiation detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311759878.9A CN117913180A (en) | 2023-12-20 | 2023-12-20 | Radiation detector and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN117913180A true CN117913180A (en) | 2024-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311759878.9A Pending CN117913180A (en) | 2023-12-20 | 2023-12-20 | Radiation detector and preparation method thereof |
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| Country | Link |
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| CN (1) | CN117913180A (en) |
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- 2023-12-20 CN CN202311759878.9A patent/CN117913180A/en active Pending
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