CN117897812A - 具有顶部接触件的金属-绝缘体-金属电容器 - Google Patents

具有顶部接触件的金属-绝缘体-金属电容器 Download PDF

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Publication number
CN117897812A
CN117897812A CN202280058663.1A CN202280058663A CN117897812A CN 117897812 A CN117897812 A CN 117897812A CN 202280058663 A CN202280058663 A CN 202280058663A CN 117897812 A CN117897812 A CN 117897812A
Authority
CN
China
Prior art keywords
plate
mesa
top contact
insulator
mim capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280058663.1A
Other languages
English (en)
Chinese (zh)
Inventor
J·J·朱
戈立新
G·纳拉帕蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN117897812A publication Critical patent/CN117897812A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
CN202280058663.1A 2021-09-09 2022-07-29 具有顶部接触件的金属-绝缘体-金属电容器 Pending CN117897812A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/470,274 2021-09-09
US17/470,274 US11973020B2 (en) 2021-09-09 2021-09-09 Metal-insulator-metal capacitor with top contact
PCT/US2022/074289 WO2023039319A1 (en) 2021-09-09 2022-07-29 Metal-insulator-metal capacitor with top contact

Publications (1)

Publication Number Publication Date
CN117897812A true CN117897812A (zh) 2024-04-16

Family

ID=83283119

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280058663.1A Pending CN117897812A (zh) 2021-09-09 2022-07-29 具有顶部接触件的金属-绝缘体-金属电容器

Country Status (7)

Country Link
US (1) US11973020B2 (https=)
EP (1) EP4399742A1 (https=)
JP (1) JP2024531534A (https=)
KR (1) KR20240053592A (https=)
CN (1) CN117897812A (https=)
TW (1) TW202331977A (https=)
WO (1) WO2023039319A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100224960A1 (en) 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
US9397038B1 (en) 2015-02-27 2016-07-19 Invensas Corporation Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates
US10043863B2 (en) 2017-01-06 2018-08-07 International Business Machines Corporation Grated MIM capacitor to improve capacitance
US10804411B2 (en) * 2017-11-29 2020-10-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method of forming the same
US10483344B1 (en) * 2018-04-26 2019-11-19 International Business Machines Corporation Fabrication of a MIM capacitor structure with via etch control with integrated maskless etch tuning layers
US11222946B2 (en) 2018-11-30 2022-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including a high density MIM capacitor and method
US11362064B2 (en) * 2019-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with shared barrier layer in redistribution and via
US11424319B2 (en) * 2020-05-29 2022-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Multilayer capacitor electrode
US11527459B2 (en) * 2021-04-28 2022-12-13 Micron Technology, Inc. Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods

Also Published As

Publication number Publication date
JP2024531534A (ja) 2024-08-29
US20230072667A1 (en) 2023-03-09
US11973020B2 (en) 2024-04-30
KR20240053592A (ko) 2024-04-24
WO2023039319A1 (en) 2023-03-16
EP4399742A1 (en) 2024-07-17
TW202331977A (zh) 2023-08-01

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