CN117890695A - Microwave radio frequency chip and test system thereof - Google Patents

Abstract

The invention provides a microwave radio frequency chip and a testing system of the microwave radio frequency chip, wherein the microwave radio frequency chip is connected with a resistor component in series with a grid electrode of the microwave radio frequency chip to be tested, and a capacitor component is connected with the grid electrode of the microwave radio frequency chip to be tested in parallel. And the phenomenon of self-excitation and even burning-out during the high-voltage test of the chip is prevented.

Description

Microwave radio frequency chip and test system thereof

Technical Field

The invention relates to the technical field of manufacturing of high-working-voltage microwave radio frequency chips, in particular to a microwave radio frequency chip and a testing system of the microwave radio frequency chip.

Background

The microwave radio frequency chip has wide application in the fields of communication, radar detection, electronic countermeasure, radio frequency heating and the like. Along with the increasing demand of the chip output power value in the application scene, the corresponding chip working voltage, namely the source drain voltage, gradually rises from 28V to 70V, even 100V, and the corresponding chip test evaluation voltage is required to reach 200V at the highest.

In the existing chip-on-chip direct current test technology, when on-state parameters such as saturated current, maximum current and transconductance of a chip are tested, the applied source-drain voltage is up to 28V, and the phenomenon of unstable and even chip burning occurs when the voltage is increased again, so that the parameter test precision is poor, and the consistency of multiple tests is poor. For example, when the pinch-off voltage is tested, the highest source-drain voltage is up to 48V, the phenomenon of instability and even chip burning can occur when the voltage is increased again, so that the test precision of the pinch-off voltage value is poor, repeated tests are unstable, and the statistics of accurate values cannot be obtained. This results in failure to obtain accurate values of parameters such as chip saturation current, maximum current, transconductance, pinch-off voltage, gate source leakage current, gate leakage current, source leakage current, etc. at source-drain voltages of 100V-200V, which is disadvantageous for improving the reliability of the chip at operating voltages of 100V.

Disclosure of Invention

The embodiment of the invention provides a microwave radio frequency chip and a testing system of the microwave radio frequency chip, which are used for solving the problem that the phenomenon of unstable and even chip burnout easily occurs when the source-drain voltage of the microwave radio frequency chip in the prior art is increased during the chip direct current test.

In a first aspect, an embodiment of the present invention provides a microwave radio frequency chip, including: the device comprises a microwave radio frequency chip to be tested, a resistor assembly and a capacitor assembly;

the resistor component is connected in series with the grid electrode of the microwave radio frequency chip to be tested;

the capacitor component is connected in parallel with the grid electrode of the microwave radio frequency chip to be tested;

the drain electrode of the microwave radio frequency chip to be tested is connected with a preset voltage, and the source electrode of the microwave radio frequency chip to be tested is grounded.

In one possible implementation, the resistive component includes a resistor R1 and a resistor R2;

the resistor R1 comprises a voltage point electrode 1 and a voltage point electrode 3;

the resistor R2 comprises a voltage point electrode 2 and a voltage point electrode 4;

the pressure point electrode 1 and/or the pressure point electrode 2 are/is used for connecting a gate probe in a testing device; and the pressure point electrode 4 is connected with the grid electrode of the microwave radio frequency chip to be tested.

In one possible implementation, the pinch electrode 3 is connected to the pinch electrode 2.

In one possible implementation, the resistance R1 and the resistance R2 are the same.

In one possible implementation, the resistance of the resistor R1 and the resistance of the resistor R2 are any resistance between 0.5 Ω and 50 Ω.

In one possible implementation, the capacitive component includes a capacitor C1 and a capacitor C2;

one end of the capacitor C1 and one end of the capacitor C2 are respectively connected with the grid electrode of the microwave radio frequency chip to be tested;

the other end of the capacitor C1 and the other end of the capacitor C2 are grounded respectively.

In one possible implementation, the capacitance of the capacitor C1 is different from the capacitance of the capacitor C2.

In a possible implementation manner, the capacitance value of the capacitor C1 is any capacitance value between 50pF and 10000 pF;

the capacitance of the capacitor C2 is any capacitance between 1pF and 150 pF.

In a second aspect, an embodiment of the present invention provides a test system for a microwave radio frequency chip, including: the microwave radio frequency chip and the testing device described in the first aspect or any one of the possible real-time modes of the first aspect;

connecting a source electrode of a microwave radio frequency chip to be tested of the microwave radio frequency chip with a source probe of the testing device, and connecting a drain electrode of the microwave radio frequency chip to be tested with a drain probe of the testing device;

the gate probe of the testing device is connected with the resistor component.

In one possible implementation, the gate probe of the test device is connected to the voltage point electrode 1 and/or voltage point electrode 2 in the resistor assembly;

when the gate probe of the testing device is connected with the pressure point electrode 1, connecting a pressure point electrode 3 with the pressure point electrode 2;

when the gate probes of the testing device are respectively connected with the pressure point electrode 1 and the pressure point electrode 2, the pressure point electrode 3 is connected with the gate of the microwave radio frequency chip to be tested.

The embodiment of the invention provides a microwave radio frequency chip and a testing system of the microwave radio frequency chip, wherein a resistor component is connected in series with a grid electrode of the microwave radio frequency chip to be tested, and a capacitor component is connected in parallel with the grid electrode of the microwave radio frequency chip to be tested, so that a stable matching device formed by the resistor component and the capacitor component can filter ripple voltage and alternating current signals possibly existing in a grid electrode input signal, and can effectively filter self-excitation signals introduced by various interference sources in an external environment. And the phenomenon of self-excitation and even burning-out during the high-voltage test of the chip is prevented.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a microwave rf chip according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a microwave RF chip circuit according to another embodiment of the present invention;

FIG. 3 is a schematic diagram of a microwave RF chip according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a test system for a microwave RF chip according to an embodiment of the present invention;

fig. 5 is a schematic diagram of a test system for a microwave rf chip according to another embodiment of the invention.

Detailed Description

In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the following description will be made by way of specific embodiments with reference to the accompanying drawings.

The microwave radio frequency chip has wide application in the fields of communication, radar detection, electronic countermeasure, radio frequency heating and the like. Along with the requirement of the application scene that the chip output power value is larger and larger, the corresponding chip working voltage, namely the source-drain voltage between the source electrode and the drain electrode of the microwave radio frequency chip, is gradually increased from 28V to 70V, even 100V, and the corresponding test evaluation voltage needs to reach 200V. The rise of the working voltage inevitably presents a great challenge to the reliability of the microwave radio frequency chip, and the microwave radio frequency chip is required to have good microwave characteristics and simultaneously can realize stable, reliable and long-time work under high pressure. In order to improve the reliability of the microwave radio frequency chip under high voltage, various parameters such as pinch-off voltage, saturation current, maximum current, transconductance, gate source/gate drain/source leakage current and the like of the microwave radio frequency chip under high voltage need to be tested in detail, and failure modes and failure mechanisms of the microwave radio frequency chip under high voltage of 100V-200V of source drain voltage are analyzed to guide optimization of chip epitaxial materials and processes and improvement of reliability.

In the prior art, in the on-chip direct current test technology of the existing chip, when the on-state parameters such as the saturation current, the maximum current and the transconductance of the microwave radio frequency chip are tested, the applied source-drain voltage is up to 28V, the phenomenon of instability and even chip burnout occurs when the voltage is increased again, so that the parameter test precision is poor, and the consistency of multiple tests is poor. For example, when the pinch-off voltage is tested, the highest source-drain voltage is up to 48V, the phenomenon of instability and even chip burning can occur when the voltage is increased again, so that the test precision of the pinch-off voltage value is poor, repeated tests are unstable, and the statistics of accurate values cannot be obtained. This results in that accurate values of parameters such as saturated current, maximum current, transconductance, pinch-off voltage and the like of the chip at the source-drain voltage of 100V-200V cannot be obtained, and the improvement of the reliability of the chip at the working voltage of 100V is very unfavorable.

In the prior art, three main reasons for unstable or even burnout of a microwave radio frequency chip in a chip test at high voltage are:

the first ripple voltage is larger. The source-drain voltage ripple voltage is larger during high-voltage test, and the grid voltage is easy to be unstable through the feedback of the grid-drain capacitance, so that the microwave radio frequency chip is unstable in test.

The second external source of interference results. The microwave radio frequency chip has external interference sources such as a testing instrument, a power supply network and the like in a chip testing environment, so that the grid voltage of the microwave radio frequency chip is unstable, and the influence of the interference on the grid voltage of the microwave radio frequency chip is more obvious when the source-drain voltage is higher.

Third, a gate voltage ac component is generated. When in direct current test, the microwave radio frequency chip generates grid voltage signals with impure frequency spectrums by the test source meter, is not ideal direct current voltage signals or current signals, often contains alternating current components with certain frequency, and the alternating current components are amplified by the microwave radio frequency chip and then are fed back to the input grid electrode through the grid drain capacitor, so that the self excitation of the chip is easily caused. Meanwhile, when the microwave radio frequency chip is in the chip test, the grid drain electrode has no load for absorbing alternating current components, so that the output parameters of the microwave radio frequency chip are unstable in the direct current test. The higher the source-drain voltage is, the stronger the amplifying effect on the gate voltage alternating current component is, and the more unstable the microwave radio frequency chip is.

In order to improve the reliability and stability of the chip in-chip test under 200V high voltage, the application provides a microwave radio frequency chip, and a stable matching network formed by a capacitor and a resistor is introduced to eliminate the phenomenon that the high-voltage chip is self-excited or even burnt out due to large ripple voltage, more test environment interference sources, impure grid voltage test signals and the like when the test voltage is increased to 200V, so that the stability of the chip in-chip high-voltage test is improved, a foundation is laid for improving the reliability of the chip in 200V work, and the reliability iteration period of the high-voltage work chip is shortened.

Fig. 1 is a schematic structural diagram of a microwave rf chip according to an embodiment of the present invention, which is described in detail below:

a microwave radio frequency chip 1 comprising: the microwave radio frequency chip 11 to be tested, the resistor component 12 and the capacitor component 13;

the resistor component 12 is connected in series with the grid electrode of the microwave radio frequency chip 11 to be tested;

the capacitor component 13 is connected in parallel with the grid electrode of the microwave radio frequency chip 11 to be tested;

the drain electrode of the microwave radio frequency chip 11 to be tested is connected with a preset voltage, and the source electrode of the microwave radio frequency chip 11 to be tested is grounded.

The resistor component 12 and the capacitor component 13 are used for filtering ripple voltage and alternating current signals possibly existing in the grid input signal of the microwave radio frequency chip 11 to be tested, and can effectively filter self-excitation signals introduced by various interference sources in the external environment, so that the phenomenon of self-excitation and even burning during high-voltage testing of the chip is prevented.

The predetermined voltage of the drain connection may be a voltage higher than 28V, for example 48V, 100V, 200V, etc.

In one embodiment, referring to the schematic circuit structure of the microwave rf chip shown in fig. 2, and the schematic physical structure of the microwave rf chip shown in fig. 3, the resistor assembly 12 includes a resistor R1 and a resistor R2;

the resistor R1 comprises a voltage point electrode 1 and a voltage point electrode 3;

the resistor R2 comprises a voltage point electrode 2 and a voltage point electrode 4;

the pressure point electrode 1 and/or the pressure point electrode 2 are/is used for connecting a gate probe in the testing device; the pressure point electrode 4 is connected with the grid electrode of the microwave radio frequency chip 11 to be tested.

The test device is used when the microwave radio frequency chip 11 to be tested in the microwave radio frequency chip is tested at high voltage.

Referring to fig. 2 or 3, the resistor R1 and the resistor R2 may be selectively connected with the gate of the rf chip to be tested according to the requirement on the resistance value of the resistor during testing, where the resistor R1 and the resistor R2 may be respectively connected in series to the gate of the microwave rf chip to be tested, and the resistor R1 and the resistor R2 may be connected in series and then connected in series to the gate of the microwave rf chip to be tested, or may be respectively connected in parallel to the gate of the microwave rf chip to be tested.

In one embodiment, the resistances of the resistor R1 and the resistor R2 are the same. And because the pressure point electrode 4 of the resistor R2 is connected to the grid of the microwave radio frequency chip to be tested, when the resistor R1 and the resistor R2 are respectively connected to the grid of the microwave radio frequency chip to be tested in series, the resistor R2 can be connected to the grid of the microwave radio frequency chip to be tested in series, so that the complex operation caused by reconnecting the two pressure point electrodes of the resistor R1 is avoided.

Optionally, when the resistor R1 and the resistor R2 are connected in series and then connected to the gate of the microwave radio frequency chip to be tested, the voltage point electrode 3 of the resistor R1 and the voltage point electrode 2 of the resistor R2 can be connected, so that the series connection of the resistor R1 and the resistor R2 can be realized, and when the high voltage test of the microwave radio frequency chip is performed, the voltage point electrode 1 of the resistor R1 is connected with the gate probe in the testing device.

Optionally, when the resistor R1 and the resistor R2 are respectively connected to the gate of the microwave radio frequency chip to be tested in parallel, the voltage point electrode 3 of the resistor R1 may be connected to the gate of the microwave radio frequency chip to be tested, and when the high voltage test of the microwave radio frequency chip is performed, the voltage point electrode 1 of the resistor R1 and the voltage point electrode 2 of the resistor R2 may be respectively connected to the gate probe in the testing device.

Through different connection modes, resistors with different resistance values can be connected to the grid of the microwave radio frequency chip to be tested, the capacitors connected to the grid of the microwave radio frequency chip to be tested in parallel are connected together, ripple voltage and alternating current signals possibly existing in input signals of the grid are filtered, self-excitation signals introduced by various interference sources in the external environment can be effectively filtered, the effect of preventing self-excitation and even burning during high-voltage testing of the chip is achieved, and stable and reliable output of parameters during high-voltage testing of the chip is ensured.

In one embodiment, the resistances of the resistor R1 and the resistor R2 are the same. Optionally, the resistance of the resistor R1 and the resistor R2 is any resistance between 0.5Ω and 50Ω. For example, the resistance values of the resistor R1 and the resistor R2 may be any resistance value of 0.5Ω, 3Ω, 5.5Ω, 6Ω, 20Ω, 45Ω, 50Ω, and the like.

In one embodiment, referring to FIG. 2, capacitive component 13 may include a capacitance C1 and a capacitance C2;

one end of the capacitor C1 and one end of the capacitor C2 are respectively connected with the grid electrode of the microwave radio frequency chip to be tested;

the other end of the capacitor C1 and the other end of the capacitor C2 are grounded respectively.

The capacitor C1 and the capacitor C2 can realize a filtering effect.

Referring to fig. 3, a schematic entity diagram of a microwave rf chip includes a large capacitor and a small capacitor, so that the capacitance of the capacitor C1 is different from the capacitance of the capacitor C2.

In one embodiment, the capacitance of the capacitor C1 is any capacitance between 50pF and 10000pF, for example, the capacitance of the capacitor C1 may be 50pF, 100pF, 750pF, 770pF, 800pF, 1000pF, 5000pF, 10000pF, etc.

In one embodiment, the capacitance of the capacitor C2 is any capacitance between 1pF and 150 pF. For example, the capacitance of the capacitor C2 may be 1pF, 10pF, 50pF, 100pF, 110pF, 150pF, etc.

The capacitors with the two different capacitance values can filter ripple voltage and alternating current signals existing in the grid input signals, and can effectively filter self-excitation signals introduced by various interference sources in the external environment, so that self-excitation and even burning phenomena are prevented during high-voltage testing of the chip.

The embodiment of the invention provides a microwave radio frequency chip, which is characterized in that a resistor component is connected in series with a grid electrode of the microwave radio frequency chip to be tested, and a capacitor component is connected in parallel with the grid electrode of the microwave radio frequency chip to be tested, so that a stable matching device formed by the resistor component and the capacitor component can filter ripple voltage and alternating current signals possibly existing in a grid electrode input signal, and can effectively filter self-excitation signals introduced by various interference sources in an external environment. And the phenomenon of self-excitation and even burning-out during the high-voltage test of the chip is prevented.

Referring to fig. 4, an embodiment of the present invention provides a system for testing a microwave rf chip, including the microwave rf chip 1 and the testing device 2 of any of the above embodiments;

connecting a source electrode of a microwave radio frequency chip 11 to be tested of the microwave radio frequency chip 1 with a source probe of the testing device 2, and connecting a drain electrode of the microwave radio frequency chip 11 to be tested with a drain probe of the testing device 2;

the gate probe of the test device 2 is connected to a resistor assembly 12.

Optionally, the testing device 2 may apply a voltage higher than 28V between the source electrode and the drain electrode of the microwave radio frequency chip 11 to be tested, where the applied voltage may reach 200V, so as to detect on-state parameters such as saturation current, maximum current, transconductance, and the like of the microwave radio frequency chip 11 to be tested.

In one embodiment, referring to FIG. 5, the gate probe of the test device 2 is connected to the pinch point electrode 1 and/or the pinch point electrode 2 in the resistor assembly 12;

when the gate probe of the testing device 2 is connected with the pressure point electrode 1, the pressure point electrode 3 is connected with the pressure point electrode 2;

when the gate probes of the testing device 2 are respectively connected with the pressure point electrode 1 and the pressure point electrode 2, the pressure point electrode 3 is connected with the gate of the microwave radio frequency chip 11 to be tested.

Referring to fig. 2 or 3, the resistor assembly includes a resistor R1 and a resistor R2; the resistor R1 comprises a voltage point electrode 1 and a voltage point electrode 3; the resistor R2 includes a pinch electrode 2 and a pinch electrode 4.

The resistor R1 and the resistor R2 can be selectively connected with the grid of the microwave radio frequency chip to be tested according to the requirement of the resistor resistance during testing, wherein the resistor R1 and the resistor R2 can be respectively connected to the grid of the microwave radio frequency chip to be tested in series, the resistor R1 and the resistor R2 can be connected together in series and then connected to the grid of the microwave radio frequency chip to be tested in series, and the resistor R1 and the resistor R2 can also be respectively connected to the grid of the microwave radio frequency chip to be tested in parallel.

In one embodiment, the resistances of the resistor R1 and the resistor R2 are the same. And because the pressure point electrode 4 of the resistor R2 is connected to the grid of the microwave radio frequency chip to be tested, when the resistor R1 and the resistor R2 are respectively connected to the grid of the microwave radio frequency chip to be tested in series, the resistor R2 can be connected to the grid of the microwave radio frequency chip to be tested in series, so that the complex operation caused by reconnecting the two pressure point electrodes of the resistor R1 is avoided.

Optionally, when the resistor R1 and the resistor R2 are connected in series and then connected to the gate of the microwave radio frequency chip to be tested, the voltage point electrode 3 of the resistor R1 and the voltage point electrode 2 of the resistor R2 can be connected, so that the series connection of the resistor R1 and the resistor R2 can be realized, and when the high voltage test of the microwave radio frequency chip is performed, the voltage point electrode 1 of the resistor R1 is connected with the gate probe in the testing device.

Optionally, when the resistor R1 and the resistor R2 are respectively connected to the gate of the microwave radio frequency chip to be tested in parallel, the voltage point electrode 3 of the resistor R1 may be connected to the gate of the microwave radio frequency chip to be tested, and when the high voltage test of the microwave radio frequency chip is performed, the voltage point electrode 1 of the resistor R1 and the voltage point electrode 2 of the resistor R2 may be respectively connected to the gate probe in the testing device.

Through different connection modes, resistors with different resistance values can be connected to the grid of the microwave radio frequency chip to be tested, the capacitors connected to the grid of the microwave radio frequency chip to be tested in parallel are connected together, ripple voltage and alternating current signals possibly existing in input signals of the grid are filtered, self-excitation signals introduced by various interference sources in the external environment can be effectively filtered, the effect of preventing self-excitation and even burning during high-voltage testing of the chip is achieved, and stable and reliable output of parameters during high-voltage testing of the chip is ensured.

In one embodiment, the resistances of the resistor R1 and the resistor R2 are the same. Optionally, the resistance of the resistor R1 and the resistor R2 is any resistance between 0.5Ω and 50Ω. For example, the resistance values of the resistor R1 and the resistor R2 may be any resistance value of 0.5Ω, 3Ω, 5.5Ω, 6Ω, 20Ω, 45Ω, 50Ω, and the like.

In one embodiment, referring to FIG. 2, capacitive component 13 may include a capacitance C1 and a capacitance C2;

one end of the capacitor C1 and one end of the capacitor C2 are respectively connected with the grid electrode of the microwave radio frequency chip to be tested;

the other end of the capacitor C1 and the other end of the capacitor C2 are grounded respectively.

The capacitor C1 and the capacitor C2 can realize a filtering effect.

Referring to fig. 3, a schematic entity diagram of a microwave rf chip includes a large capacitor and a small capacitor, so that the capacitance of the capacitor C1 is different from the capacitance of the capacitor C2.

In one embodiment, the capacitance of the capacitor C1 is any capacitance between 50pF and 10000pF, for example, the capacitance of the capacitor C1 may be 50pF, 100pF, 750pF, 770pF, 800pF, 1000pF, 5000pF, 10000pF, etc.

In one embodiment, the capacitance of the capacitor C2 is any capacitance between 1pF and 150 pF. For example, the capacitance of the capacitor C2 may be 1pF, 10pF, 50pF, 100pF, 110pF, 150pF, etc.

In order to verify the stability of the microwave rf chip 1, a direct current test is performed on the microwave rf chip 1 shown in fig. 1 and an independent microwave rf chip to be tested in the prior art, and a test voltage applied to the source electrode and the drain electrode by the test device 2 is 200V. The test results are shown in the following table, and as can be seen from the following table, the microwave radio frequency chip to be tested in the microwave radio frequency chip provided by the application is free from self-excitation in high-voltage test and stable in operation.

The embodiment of the invention provides a testing system of a microwave radio frequency chip, which is characterized in that a source electrode of a microwave radio frequency chip to be tested of the microwave radio frequency chip is connected with a source probe of a testing device, and a drain electrode of the microwave radio frequency chip to be tested is connected with a drain probe of the testing device; the grid probe of the testing device is connected with the resistor component, when the testing device is adopted to apply voltage higher than 28V between the source electrode and the drain electrode of the microwave radio frequency chip to be tested, even reaching 200V, the microwave radio frequency chip to be tested is not self-excited in high-voltage test, and the work is stable.

The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.

Claims (10)

1. A microwave radio frequency chip, comprising: the device comprises a microwave radio frequency chip to be tested, a resistor assembly and a capacitor assembly;

the resistor component is connected in series with the grid electrode of the microwave radio frequency chip to be tested;

the capacitor component is connected in parallel with the grid electrode of the microwave radio frequency chip to be tested;

the drain electrode of the microwave radio frequency chip to be tested is connected with a preset voltage, and the source electrode of the microwave radio frequency chip to be tested is grounded.

2. The microwave radio frequency chip according to claim 1, wherein the resistive component comprises a resistor R1 and a resistor R2;

the resistor R1 comprises a voltage point electrode 1 and a voltage point electrode 3;

the resistor R2 comprises a voltage point electrode 2 and a voltage point electrode 4;

the pressure point electrode 1 and/or the pressure point electrode 2 are/is used for connecting a gate probe in a testing device; and the pressure point electrode 4 is connected with the grid electrode of the microwave radio frequency chip to be tested.

3. The microwave RF chip of claim 2 wherein the microwave RF chip is configured to,

the pressure point electrode 3 is connected with the pressure point electrode 2.

4. The microwave RF chip of claim 2 wherein the microwave RF chip is configured to,

the resistance value of the resistor R1 is the same as that of the resistor R2.

5. The microwave RF chip of claim 2 wherein the microwave RF chip is configured to,

the resistance value of the resistor R1 and the resistor R2 is any one of the resistance values between 0.5Ω and 50Ω.

6. The microwave radio frequency chip according to claim 1, wherein the capacitive component comprises a capacitor C1 and a capacitor C2;

one end of the capacitor C1 and one end of the capacitor C2 are respectively connected with the grid electrode of the microwave radio frequency chip to be tested;

the other end of the capacitor C1 and the other end of the capacitor C2 are grounded respectively.

7. The microwave RF chip of claim 6, wherein the microwave RF chip is configured to,

the capacitance of the capacitor C1 is different from the capacitance of the capacitor C2.

8. The microwave RF chip of claim 7 wherein the microwave RF chip is configured to,

the capacitance value of the capacitor C1 is any capacitance value between 50pF and 10000 pF;

the capacitance of the capacitor C2 is any capacitance between 1pF and 150 pF.

9. A test system for a microwave radio frequency chip, comprising a microwave radio frequency chip according to any one of claims 1-8 and a test device;

connecting a source electrode of a microwave radio frequency chip to be tested of the microwave radio frequency chip with a source probe of the testing device, and connecting a drain electrode of the microwave radio frequency chip to be tested with a drain probe of the testing device;

the gate probe of the testing device is connected with the resistor component.

10. The system according to claim 9, wherein the gate probe of the testing device is connected to the voltage-point electrode 1 and/or the voltage-point electrode 2 in the resistor assembly;

when the gate probe of the testing device is connected with the pressure point electrode 1, connecting a pressure point electrode 3 with the pressure point electrode 2;

when the gate probes of the testing device are respectively connected with the pressure point electrode 1 and the pressure point electrode 2, the pressure point electrode 3 is connected with the gate of the microwave radio frequency chip to be tested.